NANOTECHNOLOGY AND ITS ADVENT IN ELECTRONICS AND

NANOTECHNOLOGY
AND ITS ADVENT IN ELECTRONICS
COMMUNICATION
AND
NETWORKS
Maansi Bhasin', Kasturi Mishra2 Mrs. S.P. Gaikwad", Mrs. S.P. Tondare4 ,
Bharati Vidyapeeth Deemed University College of Engineering, Pune-411043 (MS), India
1maansi
[email protected]. in, 2 mishrakasturi02@yahoo. co. in
3*[email protected].
in
,4 [email protected]
Abstract: The world is on the brink of a new
Switching and Interference which consists
.technological revolution beyond any human
of Quantum
experience. A new, more powerful industrial
Waveguides and The 3-Terminal(Y-Branch)
revolution capable of bringing wealth, health
Switching Devices.
Point
Contacts, Electronic
and education, without pollution, to every
person on the planet. This is the promise of
One of the central visions of the wireless
industry aims at ambient intelligence are
nanotechnology. Nanotechnology has gained
computation
increased
popularity
and communication
always
largely due to the
available and ready to serve the user in an
design,
creation" utilization
whose
constituent
of materials
structures
exist
at
Nanoscale i.e. physical dimensions that are
intelligent
way. This
requires that
the
devices are mobile. Core requirements for
this kind of ubiquitous ambient intelligence
in the range of 'one-billionth (1O~ of a
are that the devices are autonomous and
meter.Nanotechriology applications can be
robust. The nanotechnology is developing
discussed in both the field of electronics as
briskly in telecommunications area.
well as telecommunications.
The
The devices
which have been discussed in the paper
devices
talked
over
include
Sensors,
Nanotubes, Nanoscale Antennae. Towards
include
Nan.o-Materials,
Nanoscale
the end
a brief overview of emerging
Transistors, Semiconductor Flash Memory,
Wave
Interference
Electronic
Devices
Wave guiding and
including
commercial applications of Nano electronics
bas been inculcated in the paper.
Quantum.
Interference Devices. Some light bas been
The
applications
m
the
field
of
communications can be found in association
thrown
on
The
Basics-of
-Coherent
to
Network
concepts
communication,
Nano
applications-Healthcare
drug
Nano
ill
communication
(e.g. micro-surgery,
delivery/target
networks),
aeronautics,transportation,communication,
environmental
communication
therefore
principle for the semiconductor industry for
over 30 years. The sustaining of Moore's
Law, however, requires continued transistor
scaling and performance improvements. The
monitoring,
Nano
pervasive
computing
used in the 90 nm logic generation node is
Nanotechnologies
~ 30 nm. It is projected that transistor length
for
(e.g. pervasive sensing).
are
every 24 months, and it has been the guiding
expected
to
enable
the
physical gate length of the Si transistors
will reach -
10 nm in 2015. By way of
production of smaller, cheaper and powerful
innovation in silicon technology,
devices with increasing efficiency.
strained-Si
Keywords:
Moore's
law, Nantenna,
Y-
high-x/metal-gate
stacks, and the non-planar Tri-gate CMOS
transistor
branch devices, quantum point, NEMS.
channels,
architecture,
CMOS
. scaling and performance
I
INTRODUCTION
Molecular
nanotubes,
and
Nanodevices address the state of the art in
nanoelectronics. The semiconductor industry
a transition
from
standard
silicon interconnects to novel nanowires that
include
carbon nanotubes.
New
exciting
opportunities in emerging materials will take
system performance beyond that offered by
traditional
CMOS-based
Nanofabrication
microelectronics.
possibilities
are bright for
will continue
at
Recently, a lot of interest has been generated
and good progress has been made in the
study of
novel
nanoelectronic
Sinanowire
silicon
devices,
field-effect
carbon-nanotube
V compound
and non-silicon
including
transistors (FETs),
FETs (CNTFETs) and 1II-
semiconductor
quantum-welt
FETs (QWFETs), in the capacity of future
computation
applications.
These
devices
hold promise as candidates for integration
with the ubiquitous silicon platform in order
future technologies.
to
A.
transistor
least until the middle of the next decade.
Electronics,
is undergoing
such as
enhance
simultaneously
MOORE'S LAW
circuit
functionality
enabling
while
the extension
of
Moore's Law well into the next decade and
According to Moore's
transistors
Law, the number of
per integrated
circuit
doubles
beyond.
II
NAND-ELECTRONIC
of less than 100nm in diameter. Fullerenes
DEVICES
(carbon 60): Spherical molecule formed of
Below are mentioned presently used devices
in the field of electronics.
A.
Nanomaterial
polymeric
nanomaterial
can't
be
really
considered
as a new material considering
that have
been developed
and used
for
decades in fields such as electronic device
Nanomaterials
Two dimensional
tubes
in two dimension:
nanomaterials
such
and wires. Halloysite nanotubes
as
are
hollow tubes with high aspect ratios that are
tens to hundreds of nanometers (billionths of
a meter) in diameter, with lengths typically
ranging from about 500 nanometers to over
1.2
microns.
Nanowires
are ultrafine
arrays of dots, formed
wires or Iinear
by self-assembly.
They can be made from a wide range of
materials.
Semiconductor
of silicon,
gallium
nanowires
nitride
phosphide
has demonstrated
optical,
electronic
and
made
indium
remarkable
and
magnetic
three
dimensions:
characteristics.
3.
Nanoscale
Nanoparticles
in
are spherical
formed
hierarchical
through
a
self-assembly.
4.
Nanocomposite
Nanoparticle
materials:
silicate
nanolayer
(clay
nanocomposites) and nanotubes can be used
as reinforced
mechanical
filler not only to increase
properties
of nanocomposites
but also to impart new properties (optical,
manufacture, chemistry and engineering.
2.
recently
process. (trivial definition: 3d polymer)
as thin films and engineered surfaces. This
of
structure
molecules,
nanoscale
in one dimension:
In this category belong nanomaterialssuch
type
carbon
discovered 1986. Dendrimers
NAND-MATERIALS
1.
hexagonal
are often defined as particles
electronic etc.)
5. Nanocoatings:
surface
coating
with
nanometre thickness of nanomaterial can be
used to improve properties
like wear and
scratch-resistant,
optoelectonics,
hydrophobic
properties.
Several
key
emerging nanoelectronic devices, such as Si
nanowire
field-effect
transistors
(FETs),
carbon nanotube FETs, and III-V compound
semiconductor
quantum-well
assessed for their potential
performance,
low-power
FETs,
are
in future highcomputation
applications. Furthermore, these devices are
benchmarked
against
CMOS technologies.
state-of-the-art
Si
B.
NANOSCALE TRANSISTORS
The smaller
transistors,
scale variations
their
affect
silicon
chips and corresponding
products
using
unreliable
and variable
devices.
in their size and structure
and thus
performance
of
reliability
the more atomic-
complex
circuit.
whole
a
the
FIGURE 2: NANOTRANSISTORS
F
MOLECULAR
1:
FIGURE
Currently
the
manufacturer
is producing microchips with
by comparison
1 shows the
different
molecular
100 ,000 nanometres
computers
which
variability
presents
continued
a
huge
IS
a problem
barrier
scaling of microchips
development
of
ever-more
to
develop
methodology
the
nanoscale
manufacturing
electromagnetic
hair is around
wide
- but future
new
design
and the
powerful
tools
and
for transistors and circuits at
which
will
of reliable,
enable
the
low cost,
low
interference,
are to continue
to increase
in
power.
the
computers and electronic systems. The focus
is to
a human
transistors will hav~ to be even smaller if
transistor structures.
This increased
semiconductor
transistors less than 30 nanometres in size -
TRANSISTORS
Figure
lead
high-yield
C.
SEMICONDUCTOR
FLASH
MEMORY
Semiconductor
memory
IS
an important
component of modem microelectronics.
In
.
Flash memories , the absence or presence of
stored charge in the floating gate changes
the threshold voltage of a transistor, and as
such indicates
logic levels
1 or O. Flash
"-";''''''devices have their own s~
issues:
The high
._he.lDw the' Fermi energy in two of }he 3
~~_;o'
jamrge~ft11he11o~vng
.inject
gate makes ,gate/drain
possible diroc1Ums_
~ \
1 dimensional wavegnffie- Da;mar,'., 'P¥BF
\
waveguideer
j unction. susceptible to HCI damage.
a single- moded optical fibre.
It is a natural question to ask, to what extent
Radiation
from
may eject the trapped electrons
the
floating
nodes,
with
the
corresponding loss of the information stored
at the node. And finally, Stress induced
leakage current (SILC, precursor to TDDB)
caused by formation of bulk oxide defects is
a major problem for Flash transistors. The
SILC-related
defects
do
not
completely
short the floating gate to the channel but the
stored charge may be lost due to leakage,
eventually resulting in memory failure. The
the
well-known
devices
used
for
manipulating, RF radiation or light signals
can
be rediscovered
and employed
electrons in electronic
for
Waveguide devices.
Indeed, it turns out that such an analogy is
very useful and has' given inspiration to
many
beautiful
electronic
and
devices
nanotechnologies
nanometer
potentially
useful
fabricated
by
to match the short (~ 40
(nm))
electron
wavelength
normally encountered.
bits with such excessive leakage are called
"Anomalous bits" and even a small fraction
Electronic waves have a cut-off in electron
of
energy bel~w which no electronic wave can
such
bits
may
render
a technology
propagate;' above this energy a single-mode
unsuitable for practical applications.
I-dimensional
D.
WA VEINTERFERENCE
1)
ELECTRONIC
WAVEGUIDING
QUANTUM
INTERFERENCE
AND
DEVICES:
DEVICES:
energy
electronic
system is
until a characteristic
energy
IS
reached, above which two transverse modes
can propagate.
The transmission
through
such an electronic waveguide gives rise to a
Semiconductor
quantum
observed
(lD)
heterostructures
wells for electrons
states
directions
heterostructure
for the
may define
giving sharp
electrons
perpendicular
to
in
the
the
interfaces. It is possible to
fabricate channels
for electrons with only
one (or a few) Eigen energies (or modes)
fundamental
DC
h/2e2=12.9
kOhm
macroscopic
electrical
per
resistance
mode.
of
The
leads normally contain many
modes. The quantum resistance is due to the
transition between this many-mode system
to the ID electronic
channel in question.
Again this is qualitatively analogous to the
matching. o£.~~-spiitC
cledlOrnagnetic
balance between two values as for insjance
,
.
waves
being guided
into a square RF
.a111
t#ilee,g
"j"fiiU';~'8~~in
- .
the J•
waveguide by a-so-called microwave horn.
vicinity lead to -wedJ_£;s3in~e~~
The
the wave
resistance. Such a switching device does not
properties of the electrons by controlling the
rely on a capacitance and the switching may
constructive or destructive interference of
be potentially achieved without a transient
two or more partial waves. For nanoscale
current.
devices these effects are generally much
Electronic
more
utilized
devices
are
based on
sensitive to external electric field
variation
than the traditional field effect
waveguides may therefore' be
In much
rrncrowaves
m
the
a
same
way
waveguide.
as
Some
presently used in most electronics.
preliminary waveguide devices do already
III
exist. Examples are standing electron wave
THE
BASICS
OF
COHERENT
SWITCHING AND INTERFERENCE
An
electronic
confinement
such as
patterns
ill
in quantum
dots (cavities)
or
splitting electron waves and letting them
quantum well structures leads to a set of
subsequently
Eigen energies that can be calculated from
(directional couplers).
the Schrodinger equation. The population of
Phenomena are observed in so called stub
the electron energy states (following the
tuner structures, where effectively the length
Pauli principle) has to be taken into account,
of a reflecting arm is modulated, causing
which adds extra charge to the quantum well
interference via the reflected electron wave. .
which alters the potential energy due to
1) QUANTUM
capacitance or electron-electron interaction
ELECTRONIC WAVEGUIDES
effects. The calculation of Eigen energies
This section introduces the quantum point
therefore involves a simultaneous and self-
contacts (QPCs) and electron waveguides as
consistent solution of the Poisson equation
the
and the Schrodinger equation. The density
waveguide devices. In the remaining parts of
of electrons and hence the confmement
IS
this
changed
IS
describe a set of different devices which
necessary
by an external gate and it
to solve the new state self-
interfere
with
each
other
'r
general
POINT CONTACTS
building
section on
contain
blocks
for
AND
the
waveguide devices we
different
consistently. In a case where for instance the
combinations
of these
,~
building blocks, together having different
electrical resistance comes out as a delicate
functional properties. The fact~~t
".
electrons
are Fermi particles leads to a characteristic
narrowed
dissipation
coupling contacts along
less conductance
dimensional
higher
through one-
channels, where coupling to a
dimensional
background
regions
down
by
coupling
Via
two
the 1D channels
forming an artificial atom (quantum
with a discrete energy
dot)
spectrum. This is
leads to a characteristic "contact" resistances
similar to the coupling
via a cavity
of h/2e2=12.9
traditional
techniques.
quantization
kOhrn.
The conductance
is sharp for short pieces of
rmcrowave
system
termed.
differential conductance.
quantization
wave
point
contacts.
This
is a clear sign of electronic
guiding
that
can be observed
in
The
resonant coupling at a ID-OD-ID electron
electronic waveguides, also called normally
quantum
in
2)
has
THE
shown
to
exhibit
3-TERMINAL
negative
(Y-BRANCH)
SWITCHING DEVICES
10 mm.
"Artificial"
This length sets the limit for the extension of
electrostatic
coherent electronic waveguide, but there is
gas in the two lateral directions. To produce
no reason to believe that this is an intrinsic
a 3-termirtal device, such an "atom" must be
limit.
coupled
channels
up. to Lengths of about
The quantized
resistance
nuisance
the
is
III
general a
atoms
can
be
made
by
confinement of a 2D electron
to some leads
in a waveguide
structure. The simplest 3-terminal concept is
applications,
a confined
free
space
waveguides leading into one middle region.
impedance is 377 Ohm and typical strip line
Due to its form it is generally called a Y-
or coplanar
waveguide
branch device. The very open structure at
impedance
below
for
particularly
interference
practical
because
effect
the
have characteristic
this
with
value.
an
For
an
electronic
the
region
Y-junction
blockade.
with three electronic
permits
The extended
states
Coulomb
ill
modified
the
Y-
waveguide at high (microwave) frequencies
junction
without extensive loss, a built-in amplifier
transmission
from source to either left or
or a switch with
a negative
differential
right drain
is a delicate
conductance,
as found
in resonant
such
are strongly
no
balance,
depends on the full self-consistent
and the
which
solution
in this region. A slight change of geometry
tunnel diodes, is required .
•
Two ID electron systems may couple to
where a bias on the left or right gate may
each other in several ways where the broad
very quickly switch the two drains between
band transmission through the waveguides is
high (2e2/h) and low conductance.
source-left drain and source - right drain can
be observed
The fact that the stem
copies the most
negative of the voltages applied to the two
other electrodes
rectification
makes it a candidate for
up
to
the
1Hz
regime.
Furthermore, it bas been shown that such Ybranch devices provide Properties suitable
for logical circuits. Strictly speaking, this is,
however, neither an interference device nor
FIGURE 3: Y-BRANCH SWITCH
a waveguide
(Scanning electron microscope (SEM)
energy is larger than the typical Fermi or sub
picture of a hetero structure defined Y-
band energies in the Y-j unction.
branch switch.)
The etched ridges support a ID electronic
device,
since
the thermal
waveguide, which carries currents from the
This switch is a result of an amplified effect
upper source region to either of the two
of changing
lower drain regions. The left or the right
rearrangement
the confinement;
of
charge
i.e. a small
on
the
gate
gate voltages
give
rise
to an
abrupt
capacitance has due to the wave-mechanics
switching in resistance between the source
a big influence on the transmission in one or
and the left (or right) drain. The switching is
both source-drain
channels. The limitation
governed by large wave guiding changes at
of this device is its intrinsic low working
the Y branch point and only indirectly due to
temperature,
charging effects.
which is needs that the sub
band and Fermi energies are larger than the
IV.
thermal energies, i.e. below 50 K. For such a
DIFFICULTIES
FOR
ELECTRON
Y-branch device, the mean free path length
INTERFERENCE
AND
SWITCHING
for ballistic coupling is in the order of 100-
DEVICES
200 nm
A.
devices
at room
fulfilling
temperature.
this
criterion
Y-branch
can be
produced so that QPC coupling between the
MAJOR
Fabrication
CHALLENGES
tolerances
AND
and
temperature limits:
Quantum mechanical interference driven by
a gate voltage or a magnetic field requires
that the states that are responsible for the
transmission line impedance of 50-400 Ohm
interference have a coherence length that is
will lead to a considerable
longer than
unless special measures are taken to match
the region
over which
the
coherence occurs. In order to have a simple
impedances.
type of interference
with waveguide
the geometry must be
loss of signal
The obvious way is to work
devices
with a built-in
simple with a small number of unintended
amplification
electron scattering points in the sample.
having
The interference
integrated in the designed waveguide circuit
once
the
effect will be destroyed
thermal
energy
becomes
an
(switching
devices)
amplifier
(HEMn
or
by
closely
limiting the frequency response to about 0.1
comparable to the lowest energy differences
THz. The impedance problem
in the system causing the interference. In an
major challenge for any nm. circuit that may
ideal 1D-system
become relevant for high frequencies in the
difference
it is the sub band. energy
that sets the limit. For a ID
waveguide
with
a
corresponding·
to a sub
confmement
band separation
will be a
future.
C.
Periodic versus on-off devices
The
interference
phenomena
discussed
maximum
above comes about as a quantum mechanical
temperature will then be 5-50 K. To reach
phase shift between two partial waves giving
room temperature
a periodic, often sinusoidal, variation of the
energy
of
1-10
meV,
the
the device sizes must be
conductance
smaller than 10 nm.
with the
externally
applied
magnetic or electrical fields. The periodic
B.
response leads to the same conductance for
High frequency limitations
The interest
switching
in coherence
is particularly
high frequency
usage
and
several different external field values; this is
pointing towards
generally not desired and preferentially there
phenomena
The
should be a one to one correspondence
of 1D
between input and output. Most application
up to THz.
existence of a minimum resistance
devices, given by the resistance quantization
will require a digital signal handling and the
value h/2e2=12.9
switching
intrinsic
kOhm
problem.
This
always appear in series
value.
between
The
strong
12.9
is however
resistance
will
.
with the modulated
impedance
kOhm
an
and
mismatch
the
typical
devices mentioned
above
may
therefore be most suitable.
V.
EMERGING DEVICES
A.
Single Electron Tunneling Devices
• A Single Electron Tunn~ce
• A Yano-Type Memory is a two terytinal
is a three terminal
cdev2c.e
~~~::stBiM-~eF
Coulomb
.device based on .the
b~-gf-Mrere-'lhe
electrons o~. ap i~d
_fttitMi::t~-:·
(or dot) is controlled
.. '" -TIapS in poly-~
..
• A Nano-Flash Memory is a three terminal
by a gate. The island (or dot) may have up to
device without
thousands of electrons depending on the size
source and drain but has a floating gate
and material.
between the driven gate and the transistor
channel.
a tunnel barrier between
When
fabricated
at nanoscale
dimensions, the increase of charge by one
~ •...
-~
I--_Ur'~
.'
.'/-:
~.
electron causes an abrupt shift in the turn off
_--'00{
voltage .
VI. TELECOMMUNICATIO
l ..
.:\
r= -FIGURE
4:
A.
PRINCIPLE
OF
A·
INFORMATION PROCESSING
Information
interpret
SINGLE
ELECTRON
TRANSISTOR
(a) no electrons
'S
processors
gathered
manipulate
or sensed
and
data. The
exponential development of microelectronic
integrated circuit technology throughout the
may flow from one
last
half
century
has
driven
electrode to the other if the applied
unprecedented
voltage, V, is such that ~N+1 > ~I ;'This
processing capacity and speed.
revolution.
an
in information
state is known as Coulomb blockade
(b) If the voltage between the electrodes
With
is increased such that ~I > ~N+1 > W ,
introduction of 65nm complementary metal-
then the empty states in the island are
oxide-semiconductor
populated
the semiconductor
and
single
electrons
can
the
development
and
(CMOS)
industry
commercial
technology,
has already
tunnel through the island. To change the
crossed the nanoelectronics
frontier.These
Fermi level of the island a gate may be
trends are expected to continue until the
used that switches the single electron
feature size of silicon based nano-electronics
current on or off.
reaches 22nm or perhaps even 16nm.Then
the fundamental physical limits to the size of
conventional
devices and the power they
dissipate
will
prevent
additional
technologies and cross-disciplinary
research
in many ways. Embedding intelligent and
improvements.
autonomous devices into physical objects of
the world requires that devices adapt to their
B.
SENSORS
How
Can Nanotechnology
environment
Improve
the
Performance of Sensors? The application of
nanotechnology
ill
should
to sensors nanotechnology
allow
functionality.
improvements
In particular,
technology
combined
nanofabrication
technology
micro
a
huge range of applications. They should also
lead to much decreased size, enabling the
integration of 'nanosensors'
into many other
devices.
sensors became
an
Micromechanical
elementary
part
of
automotive
technologies in mid 1990, roughly ten years
later
more miniaturized
sensors
are
consumer
~
enabling
electronics
micromechanical
novel
features
for
and mobile devices
within next ten years the development
of
truly
on
embedded
nanostructures
everyday
based
sensors
will become a part of our
intelligent
Nanotechnologies
environments.
may also augment
the
sensory skills of humans based on wearable
or embedded sensors and the capabilities to
aggregate this immense global sensory data
into
meaningful
everyday
v
life.
information
This
requires
for
network of devices surrounding them. There
is no way to configure this kind of a huge
Nanotechnology
can help to develop novel
kind of intelligent devices where learning is
and
can deliver
become a part of the
system manually - top down.
ill
new biosensor
with
and
our
novel
one of the key characteristic properties of
the system, similarly to biological systems
which grow and adapt to the environment
autonomously. Nanotechnologies
may open
solutions for sensors that are robust in harsh
environmental conditions and that are stable
over long period of time. Today mechanical
sensors - pressure and acceleration sensors are already demonstrated
to fulfill these
requirements, but we do not have chemical
or biochemical
robust
enough.
sensors that are stable or
Furthermore,
the future
embedded sensors need to be so inexpensive
and ecologically sustainable that they can be
used in very large nwnbers.
1)
Future Prospects
We can also expect to see actuators that
control
movement
Sensor/actuator
'smart'
on
the
combinations
and precise functions
nanoscale.
will deliver
in products
and processes. For example, nanofabrication
and
inspection
actuator
with
tools require
sensors and
systems that can position objects
nanometre
sensors
accuracy.
and actuators
In this way,
constitute
Nanotubes
For
nanotubes
and their
weight
example,
have
ratio
Applications
because
the highest
of
any
carbon
strength
known
to
material,
researchers at NASA are combining carbon
nanotubes
with
composites
that
Nanotube
networks
other
can
materials
be
into
used. to build
are
prepared
by
adsorbing nanotubes on surfaces (spraying,
dip-coating,
electroplating)
or by mixing
nanotubes into matrixes (polymers, metals,
ceramics).
transistors,
cells,
large-area
transparent
and heating elements based on
nanotube networks.
Following sections can be described:
Companies to consider using them in several
fields.
solar
another
enabling technology.
C.
for
This will give an introduction
•
Nanotube
manipulate
manipulation:
We can
the nanotube positions, change
their shape, cut them and place them on
electrodes.
•
Molecular
mechanics:
mechanical
We can
simulate
the
behavior
nanotubes
by calculating the forces acting
between nanotubes and other objects such as
the substrate.
•
Nanotube
Field-Effect
Transistor:
We have successfully used semiconducting
single
and
multi-walled
nanotubes
channels of field-effect transistors.
into the physics of electrically conducting
networks
(charge
carrier
localization,
interference phenomena, sample specific
noise,
thermally
assisted
tunneling),
lightweight spacecraft.
This will summarize the state of the art of
material performance (interplay of optical
transparency and electrical conductivity,
microwave
compatibility,
shielding,
dissipation
electromagnetic
of electrostatic
FIGURE 5: NANOTUBE STRUCTURE
charges), and will discuss selected industrial
applications:
transparent
conducting
films
of
as
•
normally
D.
are straight, we have devised
In
Nanotube
nanotubes
rings:
While
Nanotube
theory
of the
theory: Computation
electrical
and
telecom
applications,
the
detection
devices typically used for light detection are
ways to prepare them in a ring form.
•
NANOSCALE ANTENNAE
and
mechanical
well
based
on
the
semiconductor
technology.
A nantenna is an electromagnetic
properties.
collector
designed to absorb specific wavelengths that
Incredible
improvements
nanotechnologies
nanonetworks
m
have enabled the vision of
composed of a number of
nanomachines.
are proportional to the size of the nantenna.
Currently, Idaho National Laboratories has
designed a nantenna to absorb wavelengths
in the range of 3-15 um .
Communicating with each other for a
specific nanoscale application. Due to size
and capabilities of nanomachinesthat may
constitute
of
molecules,
just
several
traditional
nanonetworks.
Many
communication
paradigms
investigation
communication,
or
communication
mechanisms are deemed
under
atoms
inapplicable in
novel
such
nanoscale
are
currently
as
molecular
FIGURE
6: A
nano antenna
radio
frequency receiver/transmitter.
communication over carbon
nanotubes and nanowires. Recent work has
It measures only 10.Tmicrons long and 400
also
nm wide. These wavelengths
revealed
that
nanoscale
physical
correspond to
with each
photon energies of 0.08-0.4 eV. Based on
other through various quantum phenomena,
antenna theory, a nantenna can absorb any
which makes nanoscale communication also
wavelength of light efficiently provided that
closely
the size of the nantenna is optimized for that
devices naturally
communicate
rel~
communica~
on princip~M
to
the
quantum
networks structured
Af ~tum
entanglement.
based
specific
would
wavelength.
be
wavelengths
used
between
Ideally,.
to
absorb
0.4-1.6 ~
nanteaaas
light
at
because
these wavelengths have higher energy than
infrared (shorter wavelength) and make up
material can be approximated quite well by
about 85% of the solar radiation spectrum.
a low-cost
solution,
containing
VII
EMERGING
COMMERCIAL
APPLICATIONS
OF
NANO
semiconductor
create a bulk material
this
properties
enable
improved
thermoelectric , NEMS gas sensors because
of the scale on which they can function.
nanocrystals
to
while retaining the
technology
semiconductor
Nanoscale
ink
nano properties. Some of the first markets
for
ELECTRONICS
using colloidal
will
industry,
be
in
where
the
it
could
enable efficient, flexible, solid-state cooling
for integrated circuits and LEOs. This could
greatly reduce the size or need for a heat
NEMS are expected to significantly impact
many areas of technology and science and
sink, he argues, and
potentially
improve
.performance.
eventually replace MEMS.
First application
The much-hyped
the nanoscale
properties of materials at
are
finally starting
to be
applied to some real electronics applications,
ranging
material
from
near-ideal
thermoelectric
based on spray-on semiconductor
nanocrystals, to transparent conductive films
made from on carbon nanotubes
assembled
silver
and self
nanopartic1es,
to
ultrasensitive nanoscale MEMS gas sensors.
Nanoscale materials properties are enabling
efficient, low-cost thermoelectric
Though
long
studied
,
materials.
thermoelectric
conversion of heat to electricity has never
been efficient enough to be practical for
,most
applications.
Modeling suggests that
the most efficient structure would be point
sources
of excited
evenly in a matrix-and
electrons
distributed
that ideal efficient
sophisticated
is likely to be for less
solid-state
such as spot cooling
cooling,
though,
for things like wine
coolers. But eventual markets for low-cost
roll-to-roll coated thermoelectric films could
also
include
automobiles
waste
heat
and central
recovery
power
in
stations,
general heating and cooling, and even power
generation
.likely
closer
transparent
conductive
innovative
nanomaterials
to market
films
to
are
using
potentially
challenge. Pushing MEMS (Micro-ElectroMechanical Systems) to the nanoscale opens
up new
potential
as
well. This
means
MEMS-based detectors in an electronic nose
can be made significantly more sensitive, as
well as scaled xlown in size by about a
million fold, compared to the existing state-
of-the-art-and
made
with efficient
wafer-
nanodevices used in the field of electronics
and telecommunication.
scale processes.
basics
Alliance for Nanosystems VLSI for the final
to integrate
low-cost
gas-phase
coherent
switching
and
interferences and discussed quantum pots as
stage of developing the MEMS and CMOS
processes
of
We also studied the
well as electronic waveguides.
them into practical
chemical
sensors,
We briefly looked at some problems in the
to
monitor toxic industrial gases and gas phase
implementation of switching systems. In the .
processes,
end, a
or to analyze human breath to
light
was thrown
on emerging
commercial applications of nano-electronics.
detect diseases. The detectors are essentially
arrays of nanoscale MEMS resonators-fancy
ACKNOWLEDGMENT
versions of guitar strings-set within MEMS
flow channels.
The resonators are coated
We would like to thank Prof. N. Srivastava
with a kind of chemical sponge that absorbs
for his
the target material, which changes the mass
completion of the document.
sincere
help
leading us to the
of the resonator. The gas is first sent through
REFERENCES:
a chip scale version of a gas chromatograph
process,
to
simplify
the
[1]
identification
[2]
military and industrial, the most interesting
can
though 45nrn would
be made
precursor
systems
[4]
surface
and
Thess,
VHl CONCLUSION
discussed
Using
A. Pohm"l-Mb
Giant
Magneto'
IEEE Trans on
Centre for Ultra structure Research
Ludwig
Boltzmann
Institute
for
Nanotechnology
http://www.boku.ac.atlzu£.
[5]
we
and
Molecule
CMOS circuits for data post processing.
paper
Nanotechnolgy,
Camp, Pack and Manu fact Techno.
are directed towards
masse with both MEMS flow channels and
this
Chip
J.
resistive Memory Cells",
chemical fictionalization and integration en
In
Brown
Memory
be preferable device
including
Of
A. A. Baladin, "Nanoscale thermal
[3]
at 90nrn,
arrays successfully being produced at waferscale, current efforts
Z
management," IEEE Potentials, pp.II-15.
potential may be in medical diagnostics, All
structures
To
http://www.azonano.com
problem. Though first markets will likely be
these
A
Collins, P.G., A. Zettl, H. Bando, A.
and
R.E.
Smalley.
nanodevice. Science 278: 100
vanous
v.
Nanotube
[6]
D. B. Rutledge,
M. S. Muha, IEEE
http://europa.eu.int/commlresearchlera/pdf/n
Transaction on Antennas and Propagation.
anoexpertgroupreport. pdf
[7]
[15]
Institute
provides
of
Nanotechnology
substantial
list of
nano
sites
In
Proc.
with
a
a small SCIence
huge
potential,
http://europa.eu-int/commlresearchlgrowthlg
http.z/www.nano.org. uk!
[8]
Nanotechnology:
MEMS98,
IEEE
11th
cc/projects/in-action-nanotechnology
Annual International Workshop on MEMS.
[16]
[9]
for
F. J. Gonzalez, B. Ilic, J. AIda, G.
NANOTECHNOLOGY
Roadmap
Nanoelectronics
2000,
Boreman, IEEE Journal of Selected Topics
http://www.cordis.lu/istlfetnidqfhtm
in Quantum Electronics
[17]
[lOJ
Joint
EClNational
Foundation
Workshop
Nanotechnologies200
1,
Science
on
Nanotechnology
Telecommunications
Applications
and
to
Networking,
Daniel Minoli.
[18]
ftp://ftp.cordis.lu/pub/nanotechnology/docs/
.html
," Sohail Anwar"
Nanotechnology for Telecommunications
nano_workshop~roceedings.pdf
[19]
[11]
Nanotechnology
m
the
United
Jeong G.J. and M.K. Lee, "Design of
States"NSF
a Scalable Pipelined RAM System",
IEEE
fact
sheet
http://www.nsfgov/odJIpainews/medial2000
1.Solid State Circuits
/fsnano2001.htm
[12]
J. P. M. She and 1. T. W. Yeow,
"Nanotechnology-Enabled
Wireless
Sensor
[20]
Nanoelectronics
Networks: Overcoming the Limitations from
Technology,
a Device Perspective," in Proceedings of the
[21]
IEEE
an
International
Mechatronics
and
Conference
Automation,
on
Niagara
Falls, Canada.
[l3]
device
Lent,
c.,
and D. Tougaw,
architecture
1997. A
for computing
with
quantum dots. In Proc. IEEE.
[14]
Mapping
Nanotechnologies.
Of
2001
And
Information
Rainer Waser.
Palm T. and L Thylen "Analysis of
electron
wave
Y -branch
switch"
Appl.Phys.Lett,
[22]
Societal Implications ofNanoscience
and
Nanotechnology
March
2001
http://itri.loyola.edu/nano/societalimpactlnan
osi.pdf
Excellence:
[23]
Wang Z. and Y. Nakamura, IEEE
Trans. Magn
[24]
Wdliamson
W. et al.
"12 GJJr- -
. Mrs.S.P.Gaikwad
. B.E.degree
clocked operation of ultIalow powec inter
band resonant
tunneling
diode
pipelined
from
received
in Electronics
Shivaji University,
logic gates" IEEE J. Solid State Circuits
Kolhapur, M.E. degree in
[25]
Electronics
Yano K.. et al, IEEE Trans.. On
Vidyapeeth
Electron Devices.
Deemed
form Bharati
University.
She
is
currently working as Assistant Professor in
the Department of Electronics, BVDUCOE,
Pune. She is interested in developing and
Miss
Maansi
pursuing
degree
Bhasin is
her
B
Tech
in Electronics
&
studying new algorithms, architectures, and
technologies
that
enhance
network
efficiency.
Telecommunications
from Bharati
Deemed
University.
Vidyapeeth
Her main
Mrs.S.P. Tondare
field of
received
B.E. and M.E. degree in
"
interest
concerns
the telecommunications
Biomedical
networks and has a mainline interest to work
from
in the area by making use of her analytical
m
and practical approach.
Engineering
Mumbai University
2003
and
2005
respectively. She is currently working as a
Lecturer in the Department of Electronics,
BVDUCOE, Pune. Her area of interest in
the field of Biomedical Instrumentation and
Miss Kasturi
pursuing
Misbia is
her B Tech
degree in Electronics &
Telecommunications
from Bharati Vidyapeeth
Deemed University.
Her orientation is towards research in Signal
and Video Processing.
Biomaterials,