Metolius BSI™ InGaAs P-I-N Photodiodes

Metolius BSI™ InGaAs P-I-N Photodiodes

Metolius BSI™
InGaAs P-I-N
Photodiodes
PPE-1000 Series
Metolius BSI™ P-I-N Photodiodes
High-quantum
efficiency
P-I-N
photodiode
increases
probability of detection and reduces false alarm rate.
Features
▪ Low-capacitance , h i g h sensitivity, back- s i d e illuminated (BSI ) d e s i g n
▪ 950–1700 nm re s p o n s e
▪ Low operating b i a s , < 5 V
▪ C u s t o m d e v i c e s a v a i l a b l e
upon request
Applications
▪ Free-space opti c a l
communications
▪ Laser range find i n g
▪ Optical time dom a i n
reflectometry
▪ Optical coherence tomography
▪ Fluorescence m e as u r e m e n t s ,
spectroscopy,
chromatography a n d
electrophoresis
▪ Te lecommunicat i o n s
▪ LADAR/LIDAR
PPE-1000 Series InGaAs P-I-N Photodiodes
The Metolius BSI™ PPE-1000 series high-quantum ef ficiency P-I-N
(HQE-PIN) InGaAs photodetector can provide high-sensitivity NIR
light detection with a large-diameter active area, minimal bias (< 5
V), and low dark currents.
This backside-illuminated photodetector provides both higher
sensitivity and lower capacitance than competing frontsideilluminated photodiodes. While detector capacitance is minimized
at a bias of 3 to 5 Volts, the device can operate with at least 90%
of its specified responsivity with a fraction of the dark current at a
bias of only 0.7 V.
For ease of integration, the HQE-PIN die is provided on a ceramic
submount with or without a co-mounted temperature sensor.
Packaging of these diodes is available in either a windowed TO-46
header or with a three-stage thermoelectric cooler (TEC) in a 6-pin
windowed TO-8 header.
Voxtel, Inc., 15985 NW Schendel Avenue, #200, Beaverton, OR 97006, www.voxtel-inc.com, T 971.223.5646, F 503.296.2862
InGaAs P-I-N
Photodiodes
Metolius BSI™
PPE-1000 Series
P e r f o r m a n c e — P P E -10 0 0 S e r i e s
1.0
0.80
0.80
0.60
0.40
0.20
0.0
-500
2
Quantum Efficiency
vs. Wavelength
Photodiode Spectral
Response (2V)
Quantum Efficiency
Quantum Efficiency
Quantum
Efficiency
Uniformity
Spatial Uniformity
of Photodiode
Response
1.0
0
500
1000
1500
0.60
0.40
0.20
0.0
800
2000
1000
1200
1400
1600
1800
Wavelength (nm)
Spot Location (um)
S p e c i f i c a t i o n s — P P E -10 0 0 S e r i e s
For additonal specifications, see packaging-specific sections.
Parameter
Min
Typical
Max
Units
Spectral Range, λ
950
1000–1600
1750
nm
Active Diameter
1
650
μm
1064 nm
1550 nm
Quantum Efficiency
0.82
0.96
0.85
0.98
Absolute Operating Temperature
-73
200
-40 – 30
233 – 303
75
348
oC
Temperature Sensing Diode
Voltage and ΔV/K 1
0.48
0.50
-2.18 mV/K
0.51
V
K
Sourcing 10 µA and 298 K
Ordering Information
P
P
E
1
-
-
-
A
Revision
Device
Device Type
Detector
Diameter
Package
Window
P=non-APD
P=P-I-N
E=Metolius BSI TM 1= Single
Q=300µm
B=Ceramic Submount
A=Flat
photodiode
photodiode
R=650µm
C=TO- 46
Z=None
S=1150µm
K=TO- 8 w/3-stage TEC
HQE-PIN
Element
Other packaging options for the HQE-PIN photodiodes are available by request. Please contact Voxtel for specific ordering information
and parts availability. Upon request, Voxtel will gladly assist customers in implementing the proper controls to ensure safe and
reliable operation of detectors in their system.
Voxtel, Inc., 15985 NW Schendel Avenue, #200, Beaverton, OR 97006, www.voxtel-inc.com, T 971.223.5646, F 503.296.2862
Metolius BSI™
InGaAs P-I-N
Submounted Photodiode Dies
PPE-1000 Series
Specifications—Submounted Dies
1150-μm
650-μm
300-μm
PPE1-SBZA
PPE1-RBZA
PPE1-QBZA
Min
Noise Spectral Density
Dark Current 1
Dark Current
Dependence on
Temperature 2
Total Capacitance 3
Max. Instantaneous
Optical Input
1
2
3
Typical
Max
Min
27
1.7
2.2
Typical
Max
Min
20
2.6
0.9
1.2
Typical
Units
Max
fA/Hz 1/2
13
1.7
0.4
0.5
1.0
nA
0.30
0.30
0.30
dB/K
38
12
2.9
pF
500
est.
100
est.
V B i a s = 2 V, T = 2 9 8 K
240 K – 300 K
V Bias = 5 V
Voxtel, Inc., 15985 NW Schendel Avenue, #200, Beaverton, OR 97006, www.voxtel-inc.com, T 971.223.5646, F 503.296.2862
50
est.
mW
3
InGaAs P-I-N
Submounted Photodiode Dies
Metolius BSI™
PPE-1000 Series
Mechanical Information—Submounted Dies
The submount for the PPE-1000 series InGaAs P-I-N photodetector is 250-μm-thick aluminum-nitrate.
The photodiodes are 350-μm thick.
1150-micron Submounted Die
1490 μm x 1490 μm
CATHODE
ANODE
1490 μm x 1490 μm
CATHODE
CATHODE
ANODE
CATHODE
C
4
650-micron Submounted Die
1400 µm
1420 µm
1500 µm
1500 µm
950 µm
CATHODE
ANODE
CATHODE
CATHODE
ANODE
CATHODE
C
300-micron Submounted Die
1185 µm
1020 µm
1145 µm
1145 µm
770 µm
CATHODE
ANODE
CATHODE
CATHODE
ANODE
CATHODE
C
Voxtel, Inc., 15985 NW Schendel Avenue, #200, Beaverton, OR 97006, www.voxtel-inc.com, T 971.223.5646, F 503.296.2862
Metolius BSI™
InGaAs P-I-N
PPE-1000 Series Hermetically Packaged Photodiodes
S p e c i f i c a t i o n s —T O - 8 P a c k a g e s w i t h 3 - s t a g e T E C
1150-μm
650-μm
300-μm
PPE1-SK AA
PPE1-RK AA
PPE1-QK AA
Min
Typical
Max
Min
Typical
Max
Min
Typical
Dark Current 1
nA
Dark Current
Dependence on
Temperature 2
2
3
Max
fA/Hz 1/2
Noise Spectral Density
1
Units
dB/K
Total Capacitance 3
pF
Max. Instantaneous
Optical Input
mW
5
V B i a s = 2 V, T = 2 9 8 K
240 K – 300 K
V Bias = 5 V
M e c h a n i c a l I n f o r m a t i o n —T O - 8 P a c k a g e s w i t h 3 - s t a g e T E C
PIN Plane
6.35 ± 0.1
Voxtel, Inc., 15985 NW Schendel Avenue, #200, Beaverton, OR 97006, www.voxtel-inc.com, T 971.223.5646, F 503.296.2862
Pinout
1) TEC 4) TEC +
9) Temp Sense 10) Temp Sense +
11) PIN Anode (p)
12) PIN Cathode (n)
InGaAs P-I-N
Metolius BSI™
Hermetically Packaged Photodiodes PPE-1000 Series
S p e c i f i c a t i o n s —T O - 4 6 P a c k a g e s
1150-μm
650-μm
300-μm
PPE1-SCAA
PPE1-RCAA
PPE1-QCAA
Min
Typical
Max
Min
Typical
Dark Current 1
6
3
Typical
Max
nA
Dark Current
Dependence on
Temperature 2
2
Min
fA/Hz 1/2
Noise Spectral Density
1
Max
Units
dB/K
Total Capacitance 3
pF
Max. Instantaneous
Optical Input
mW
V B i a s = 2 V, T = 2 9 8 K
240 K – 300 K
V Bias = 5 V
M e c h a n i c a l I n f o r m a t i o n —T O - 4 6 P a c k a g e s
Pinout
1) PIN Cathode
2) PIN Anode
3) Ground, T Sense 4) T Sense +
Voxtel, Inc., 15985 NW Schendel Avenue, #200, Beaverton, OR 97006, www.voxtel-inc.com, T 971.223.5646, F 503.296.2862
Metolius BSI™
InGaAs P-I-N
Photodiodes
PPE-1000 Series
Additional Information
Impulse Response of 1150-um Photodiode
at 2.3 V Reverse Bias
Typical Impulse Response—1150-micron device at 2.3 V Reverse Bias
-2
2.5 10
-2
Response (arb)
2.0 10
-2
1.5 10
-2
1.0 10
-3
5.0 10
7
0.0
-3
-5.0 10
0
0.5
1
1.5
2
Time (ns)
Capacitance-Voltage Characteristics
1150-um Photodiodes
Capacitance vs. Voltage—1150-micron device
-11
6.5 10
#1
#2
#3
-11
6.0 10
Capacitance (F)
-11
5.5 10
-11
5.0 10
-11
4.5 10
-11
4.0 10
-11
3.5 10
-11
3.0 10
-11
2.5 10
0
2
4
6
Reverse Bias (V)
Voxtel Literature No. PPE-1000 Series, Version date: 3/2014 ©
Voxtel makes no warranty or representation regarding its products’ specific application
suitability and may make changes to the products described without notice.
8
10
InGaAs P-I-N
Photodetectors
Metolius BSI™
PPE-1000 Series
8
Voxtel Literature No. PPE-1000 Series, Version date: 3/2014 ©
Voxtel makes no warranty or representation regarding its products’ specific application
suitability and may make changes to the products described without notice.