Anelva RF Magnetron Sputtering Unit- Model SPF-332H

Anelva RF Magnetron Sputtering UnitModel SPF-332H
Sabiha Sultana
Equipment technologist
CEN,IISc
Overview
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Tool specifications
Reasons for sputtering
Simple working diagram
Operating parameters
Materials available @ CEN
Regularly used processes
Process developed @ CEN
New Sputtering unit
Tool Specifications:
Make
Cathode
Ultimate pressure
Medium
Power source
Substrate-target distance
Substrate heater
Anelva Sputtering unit
model SPF 332H
3 numbers 3” planar
magnetron cathodes
2x10-6 mbar
Argon plasma
DC and RF
5-10 cm
RT to 350°C
Reasons for sputtering:
 Use of sufficiently large area targets give
uniform thickness over the wafer.
 Precise control of thickness through
operating parameters.
 Control of film property. Ex: Grain
structure (substrate temperature)
Simple working diagram:
Operating parameters:
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Argon pressure
Substrate voltage
Substrate to target distance
Deposition time
Substrate temperature
Materials currently available @ CEN:
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Chromium
Gold
Titanium
Platinum
Nickel
Silver
ITO
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Silicon P-type
Silicon N-type
Silicon-di-oxide
Silicon Nitride
PZT
Zirconium
Aluminum
High K dielectrics:
 Europium Oxide
 Gadolinium Oxide
Other materials sputtered:
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Tungsten
Niobium
Tantalum
Yttrium Oxide
Germanium
Silicon
Application of sputtered films:
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Metal contact
Lift off
High K capacitors
Seed layer for electroplating
Masking layer
SEM imaging of non conducting films
Chrome used as hard mask for etching
SiO2 in RIE- Renil Kumar (INUP)
200nm lines
masked by
Chrome
Metal Nano particles as charge-trapping
nodes- Girish M (Chemical eng dept)
7nm Au nano
particles with
2nm spacing
Gadolinium oxide film
Gold nano particles embedded in Gd2O3
Sputtered metal films used for surface
plasmon resonance- Nityanand Kumawat (ECE)
Sputtered Silicon film Depoition rate
2nm/min heated @300°C- Sindhuja Sridhar (ECE)
FLEXLAB Flexible configurable sputtering system
 RF and DC sputter
source.
 Deposits metallic,
inorganic, di-electric
and organic materials.
 Multilayer and
Co-deposition.
 Downstream
sputtering.
System specification:
 Deposition of metals like Au, Ag, Ni, Cr,
Cu, Pt and dielectrics like Eu2O3, Gd2O3,
TiO2, Al2O3, SiO2, Ta2O5, HfO2, etc.
 These coatings should be deposited on
glass/semiconductor substrates.
 Coating uniformity of ±1% on 4” diameter
substrate.
Provision of operating:
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Vacuum system
RF magnetron and DC power supply
Substrate heating
Substrate rotation
Variable substrate to target distance
Thickness monitor and control in both
manual and automatic mode of operation
Vacuum system:
 Low vacuum pumping system:
 Make: Edward gv 80 dry pump
 Ultimate pressure: <10-2mbar
 High vacuum pump:
 Make: pfeiffer Vacuum turbo pump
 Pumping speed: 1200 l/s
 Ultimate pressure: <2x10-10Torr
Measuring gauges:
 Low vacuum gauge:
 Atmospheric pressure- 5x10-4 mbar
 Pirani guage(accuracy-1%)
 High vacuum gauge:
 0.01- 2x10-9 mbar
 Compact cold cathode guage(accuracy-1%)
 Full range gauge:
 Compact full range pirani/ cold cathode gauge
 5x10-9 – 1000 mbar
 Process gauge:
 Compact capacitance gauge
Gas distribution system:
 Inlet for N2, O2 and Ar with MFC
 Fourth line for additional gas
Cathodes:
 3” cathodes- 3
numbers with
confocal
arrangement.
 DC and RF
magnetron system.
Power supplies
 RF power supply:
 1500W
 13.56MHz
 50Ω
 DC power supply:
 1000W
 DC Split biasing:
 300V , 5amps
Substrate holder:
 6” diameter substrate holder
 RF and DC bias cleaning of the substrates
 Distance between substrate and target
variable from 5cm to 15cm
 Substrate holder rotation speed can be
varied between 0-20rpm
 DC substrate bias provided (split biasing)
 Substrate heating system provided
Split biasing
 Provision for split biasing between anode
and cathode electrodes
 DC power supply of 300Volts, 5Amps
capacity is provided to substrate holder
 For simultaneous sputtering deposition
with substrate etching
 This is to achieve high packing density and
quality coating
Substrate heating
 Maximum temperature: 350°C
 Radiant heaters/ quartz lamp-type
 Regulated by digital PID type temperature
controller, interfaced to PLC
Digital thickness monitoring:
 3 water cooled dual head adjustable quartz
crystal monitor
 Sensor-AT-CUT Plano convex quartz
crystal sensor
 Oscillation frequency of 6MHz
 Accuracy better than 1% of nominal value
and deposition better than 0.1nm/sec
Magnetron sputtering sources:
 3 numbers of water cooled sources of 3”
diameter
 Compatible with DC and RF power supply
 Provision for co-deposition provided
 Target shutter provided to prevent cross
contamination.
Control system:
 System has provision of working in:
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Completely manual mode
Fully automatic mode
Automatic mode with manual override
Stand by mode
 Coating control system:
 Magnetron source controlling mechanism and
shutter will be connected to thickness
controller.
Thank You