Il pensiero parallelo: Una storia di innovazione aziendale

Il pensiero parallelo:
Una storia di innovazione aziendale
Maria Teresa Gatti
Scienzazienda
Trento, 8 Maggio 2006
Overview
• ST is one of the largest Worldwide Semiconductors
provider, with products ranging from Smart Power
actuators to MPEG decoders to Multimedia Processors
• The technology roadmap is extremely relevant for
companies in our field, where each competitor possesses
strenght and weaknesses, and …
• …where everybody follows the path defined by the Moore
law
2
Moore’s Law
10.000.000.000
Number of transistors on
An integrated circuit
1.000.000.000
100.000.000
Itanium 2
(9 MB cache)
Number of transistors doubling
every 18 months
Itanium 2
Pentium 4
Itanium
10.000.000
Pentium III
Pentium II
Pentium
1.000.000
486
386
100.000
286
8086
10.000
4004
2300
Number of transistors doubling
every 24 months
8080
8008
1971
1980
1990
2000
2004
3
… and some Moore’s law consequences:
Power density in Intel’s microprocessors
1000
Nuclear Reactor
P4 @ 1.4GHz, 75W
Watts/cm2
100
Rocket
Noozle
P5
P4
Sun’s
surface
Pentium III ®
Hot plate
10
Pentium II ®
PentiumPro ®
Pentium ®
i386
i486
1
1.5μ
1μ
0.7μ
0.5μ
0.35μ
0.25μ
0.18μ 0.13μ 0.1μ
0.07μ 0.05μ
4
A success story
…yet for ST one of the most profitable business of the
last decade derived from a series of technologies
exploting the “more than moore” approach :
the inkJet cartridges for HP
5
Ink Jet Cartridge
6
G
LO D
A L
N OR
W
Line, Batteries,
Alternators, Solar Cells, Fuel Cells
A
A
N
W AL
O O
R G
LD
Concentrated System in a Single Box
Power Management
Bipolar, BCD, CMOS
BiCMOS, VIP, µ-Machining
Sensors
Lamps
Motors
Antennas
Data Acquisition
and Conversion
Keyboards
Central Processing
(µP, DSP)
Clock
Bipolar, CMOS,
RF-BiCMOS,
µ-Machining
Line
Interfaces
Clock
Digital CMOS
Displays
Power
Actuators
Bipolar, BCD,
CMOS, HVCMOS,
VIP, µ-Machining
Clock
A
CMOS, Flash,
DRAM, µ-Machining
Speakers
Multifunction
Peripheral (System
Oriented Tech.)
Antennas
G
LO D
A L
N OR
W
A
N
W AL
O O
R G
LD
Memories
CRTs
Inkjets
Switches
Information
Processing
(Super Integration)
Solenoids
7
Integral silicon technology roadmap
baseline
CMOS
memory
HV
Power
RF
sensors
passives actuators
fluidics
2000
1000
size
in nm
500
More
Moore
2005
250
2010
130
2015
65
Beyond32CMOS
2020
More than Moore
8
Intelligent systems compute and interact
baseline
CMOS
memory
RF
HV
Power
sensors
passives actuators
‘More Moore’
fluidics
‘More than Moore’
Compute
Digital content
Complex circuit (SoC)
Lots of software
Interact with user and environment
Non-digital content
Complex packaging (SiP)
Lots of processes
SoC can be a component of SiP
9
Complex interfacing: “the Arms,
Legs, Ears and Eyes”
GSM frontend
RF-ID tag
Wheel speed
Phone camera
3D accelerometer
Inkjet head
Ultra-filter
Lab-on-a-Chip
RF-MEMS switch
Nano-syringe
10
Silicon as Structural Material
11
MEMS: Microactuator
and ARS
12
Silicon Microstructures in Future HDD
13
Typical Assembly of an HDD
Suspension with Microactuator
14
Atomic Resolution Storage from HP
Atomic Resolution Storage
(ARS) technology
•
Uses focused electron beams and a phase
change media to read and write data
•
Micromachined movers provide high
resolution access of media by fixed emitter
tips
•
Technology developed at HP Labs
ARS products
•
Perfect for mobile applications
•
Small, high density storage
•
Memory cards and embedded storage
applications
•
Cost effective … enabling appliances and
applications
15
Scientific American – January 2003
MEMS
MEMS:
Micro Electro Mechanical System
•
–
–
three dimensional device
embedded in silicon
multifunction system
consisting of sensors,
actuators, electronics.
16
Different Type of Accelerometers
17
Rotational Accelerometer
18
Lab on Chip
19
Lab on Chip Movie
20
21
Millepede from IBM
High Doped
Silicon Cantilever
Heater
22
Scientific American – January 2003
Millipede media
Movie from IBM web site
23
Millipede system
Movie from IBM web site
24
Cantilevers
A transferred cantilever
Cantilever array transferred on a wiring wafer
•Cantilever bending after stress tuning: 3.8μm
•Three positions in cantilever bending
•Navigation
•Reading
•Writing
25
ST Cantilever on SOI wafer
26
Development of a fabrication
process of a silicon micromachined
capacitive microphone
S. Brida, A. Faes, L. Ferrario, F. Giacomozzi,
V. Guarnieri, B. Margesin, M. Zen
ITC-IRST
Microsensors and System Integration Division
via Sommarive, I-38050 Povo, Trento, Italia
27
Introduction: physical principles
Back chamber
Perforated back electrode
acoustic gap
piston
spring
Sound
28
Design of the first mask-set: die layout
RGate
Substrate
contact
RSource
Spring&
Piston
Backplate
29
Final : retro
30
Final : front
31