APDs VFP-1000 Series

Siletz™
VFP-1000 Series
Submounted APD Die
SILETZ™
Submounted APD Die
High-Gain, Low Excess-Noise NIR Single Carrier
Features
▪
High-gain NIR I n G a A s s i n g l e carrier- multiplic a t i i o n A P D
(SCM-APD)
▪
950–1700nm re s p o n s e
▪
High responsivit y
▪
Low excess nois e a n d h i g h
gain combine fo r s u p e r i o r
sensitivity not a c h i e v e d w i t h
conventional AP Ds
▪
Provides high-ga i n w i t h l o w
noise, leading t h e i n d u s t r y i n
solid-state NIR d e t e c t i o n
▪
Custom devices a v ai l a b l e u p o n
request
Multiplication APDs (SCM-APDs)
VFP-1000 Series
Back-illuminated, high-gain, ultra-low-excess-noise SCM-APDs combine the
industry’s highest gain and lowest excess noise, providing unsurpassed
Applications
sensitivity in the near infrared spectral range from 950 to 1700nm.
Voxtel’s single-carrier multiplication APDs (SCM-APDs) are photodetectors
▪
Free-space opti c a l
communications
▪
Laser range find i n g
▪
Optical time dom a i n
reflectometry
APDs achieve high responsivity through internal current gain, but the use-
▪
Optical coheren c e t o m o g r a p h y
fulness of this gain is undermined by the accompanying avalanche noise.
▪
Fluorescence me as u r e m e n t s ,
spectroscopy, c h r o m a t o g r a p h y
and electrophor e s i s
that exceed the capabilities of conventional APDs in both gain and noise
performance. This allows for active optical systems with better sensitivity,
longer range, and lower laser power.
Voxtel’s SCM-APDs can be operated at high gain with low noise, providing
a significant advantage.
The Siletz series of SCM-APDs has a low effective ratio of ionization
coefficients (keff ~.02), and can be operated with low excess noise:
F(M)<2 up to M=10, and F(M)<3 up to M~40, with maximum usable linearmode gain of Siletz SCM-APDs at typically M=50. Standard telecom NIR
APDs are not useful above M=15, and carry a much greater noise penalty
(k=0.4; F(M)>7 at M=15).
With high gain, low noise and high quantum efficiency, Voxtel’s SCM-APDs
are ideal for low-light-level detection, or other applications that call for
industry-leading sensitivity in the 900–1700 nm spectral band. Coupling
the SCM-APD to a low-noise amplifier produces a receiver with high gain,
superior noise equivalent power, and better sensitivity.
Voxtel, Inc., 15985 NW Schendel Avenue, #200, Beaverton, OR 97006, www.voxtel-inc.com, T 971.223.5646, F 503.296.2862
Voxtel Literature No. VFP1-xBZB, Version date: 06/2012 ©
Voxtel makes no warranty or representation regarding its products’ specific application suitability and may make changes to the products described without notice.
Submounted APD Die
Siletz™
VFP-1000 Series
Silet z™ Series APD Photoreceivers
Voxtel SCM-APD Responsivity
Responsivity [A/W]
1.0
2
100
Voxtel SCM-APD QE
0.8
80
0.6
60
0.4
40
0.2
20
0.0
0
900
1100
1300
1500
1700
Wavelength [nm]
10-5
T
dark
10-6
225
250
275
300
325
Temperature [K]
350
Breakdown Voltage [V]
Dark Current [A]
Spectral responsivity
curve and quantum efficiency
@ gain M=1, T=295K, 200µm SCM-APD
76
74
72
225
250
275
300
Temperature [K]
Effects of temperature on dark current and breakdown voltage of a
200µm SCM-APD @ M=50 ± 2
Voxtel, Inc., 15985 NW Schendel Avenue, #200, Beaverton, OR 97006, www.voxtel-inc.com, T 971.223.5646, F 503.296.2862
Voxtel Literature No. VFP1-xBZB, Version date: 06/2012 ©
Voxtel makes no warranty or representation regarding its products’ specific application suitability and may make changes to the products described without notice.
325
350
Siletz™
Submounted APD Die
VFP-1000 Series
V F P -10 0 0 S e r i e s N e a r -I n f r a r e d S C M - A P D
M o d e l V F P1- E B Z B
30µm, 4.0GHz
Specifications
Parameter
Min
Typical
Max
Units
Spectral Range, λ
950
1000–1600
1750
nm
Active Diameter
30
μm
Bandwidth
4.0
GHz
APD Operating Gain, M
Responsivity at M=1
1
20
40
.66
.73
.78
.91
1.01
1.04
A/W
λ=1064nm
λ=1550nm
2.0
M=10
2.9
M=40
Noise Spectral Density @ M=10
.78
pA/Hz 1/2
Dark Current @ M=1i
6.6
nA
35
pF
Excess Noise Factor, F(M,k)
Total Capacitance ii
Breakdown Voltage, V BR
iii
70
74
ΔV BR /ΔT
29
Temperature Sensing Diode
Voltage and
80
∆V/K iv
mV/K
0.50
0.48
-2.18 mV/K
0.51
V
125
µW
Maximum Instantaneous
Input Power V
i
Unity referenced from M=10, T=298K
M>3
iii T = 2 9 8 K , I
dark> 0 . 1 m A
iv S o u r c i n g 1 0 µ A , T = 2 9 8 K
v 10ns, 1064nm signal at a 20Hz PRF with
an APD multiplication gain of M=10
ii
370 µm
1520 µm
TEMP SENSE
APD
B
E
C
E
CATHODE
V
ANODE
CATHODE
Voxtel, Inc., 15985 NW Schendel Avenue, #200, Beaverton, OR 97006, www.voxtel-inc.com, T 971.223.5646, F 503.296.2862
Voxtel Literature No. VFP1-xBZB, Version date: 06/2012 ©
Voxtel makes no warranty or representation regarding its products’ specific application suitability and may make changes to the products described without notice.
3
Submounted APD Die
Siletz™
VFP-1000 Series
V F P -10 0 0 S e r i e s N e a r -I n f r a r e d S C M - A P D
M o d e l V F P1-J B Z B
75µm, 2.3GHz
Specifications
Parameter
Min
Typical
Max
Units
Spectral Range, λ
950
1000–1600
1750
nm
75
Bandwidth
2.3
2.7
1
20
40
.66
.73
.78
.91
1.01
1.04
APD Operating Gain, M
Responsivity at M=1
Excess Noise Factor, F(M,k)
4
μm
Active Diameter
Noise Spectral Density @ M=10
Dark Current @ M=1i
12
Breakdown Voltage, V BR
70
Voltage and
M=40
1.46
pA/Hz1/2
28
∆V/K iv
80
-2.18 mV/K
Maximum Instantaneous
Input Power V
i
Unity referenced from M=10, T=298K
M>3
iii T = 2 9 8 K , I
dark> 0 . 1 m A
iv S o u r c i n g 1 0 µ A , T = 2 9 8 K
v 10ns, 1064nm signal at a 20Hz PRF
with an APD multiplication gain of M=10
ii
370 µm
1520 µm
TEMP SENSE
APD
B
E
C
E
CATHODE
V
mV/K
0.50
0.48
nA
pF
29
Temperature Sensing Diode
λ=1550nm
2.9
74
ΔV BR /ΔT
λ=1064nm
M=10
0.23
iii
A/W
2.0
23
Total Capacitance ii
GHz
ANODE
CATHODE
Voxtel, Inc., 15985 NW Schendel Avenue, #200, Beaverton, OR 97006, www.voxtel-inc.com, T 971.223.5646, F 503.296.2862
Voxtel Literature No. VFP1-xBZB, Version date: 06/2012 ©
Voxtel makes no warranty or representation regarding its products’ specific application suitability and may make changes to the products described without notice.
0.51
V
1
µW
Siletz™
Submounted APD Die
VFP-1000 Series
V F P -10 0 0 S e r i e s N e a r -I n f r a r e d S C M - A P D
M o d e l V F P1- N B Z B
200µm, 350MHz
Specifications
Parameter
Min
Typical
Max
Units
Spectral Range, λ
950
1000–1600
1750
nm
Active Diameter
Bandwidth
APD Operating Gain, M
Responsivity at M=1
300
350
400
1
20
40
.66
.73
.78
.91
1.01
1.04
Excess Noise Factor, F(M,k)
Noise Spectral Density @ M=10
Dark Current @ M=1i
90
70
Voltage and
∆V/K iv
3.92
pA/Hz 1/2
200
80
Maximum Instantaneous
Input Power V
i
ii
370 µm
1520 µm
TEMP SENSE
APD
B
E
C
E
CATHODE
V
mV/K
-2.18 mV/K
Unity referenced from M=10, T=298K
M>3
iii T = 2 9 8 K , I
dark> 0 . 1 m A
iv S o u r c i n g 1 0 µ A , T = 2 9 8 K
v 10ns, 1064nm signal at a 20Hz PRF
with an APD multiplication gain of M=10
nA
pF
0.50
0.48
λ=1550nm
M=40
29
Temperature Sensing Diode
λ=1064nm
2.9
74
ΔV BR /ΔT
A/W
M=10
1.47
iii
MHz
2.0
165
Total Capacitance ii
Breakdown Voltage, V BR
μm
200
ANODE
CATHODE
Voxtel, Inc., 15985 NW Schendel Avenue, #200, Beaverton, OR 97006, www.voxtel-inc.com, T 971.223.5646, F 503.296.2862
Voxtel Literature No. VFP1-xBZB, Version date: 06/2012 ©
Voxtel makes no warranty or representation regarding its products’ specific application suitability and may make changes to the products described without notice.
0.51
V
5
µW
5
Submounted APD Die
Siletz™
VFP-1000 Series
O r d e r i n g I n f o r m a t i o n F o r V F P -10 0 0 S e r i e s A P D P r o d u c t s
V
F
Device
Device Type
V=APD
F=Linear mode
P
1
Detector
P=Siletz
1=Single
SCM APD
Element
-
B
Z
B
Diameter
Package
Window
Revision
E=30µm
B=Ceramic
Z=None
J=75µm
Submount
N=200µm
Not all combinations of product features are available. Please contact
Voxtel for specific ordering information and parts availability.
6
Caution During APD Operation
If an APD is operated above its breakdown voltage
without some form of current protection, it can draw
enough current to destroy itself. To guard against
this, the user can add either a protective resistor
to the bias circuit or a current-limiting circuit in the
suppor ting electronics.
The breakdown voltage of an APD is dependent
upon its temperature: the breakdown voltage decreases when the APD is cooled. Consequently, a reverse bias operating point that is safe at room temperature may put the APD into breakdown at low
temperature. The approximate temperature dependence of the breakdown voltage is published in the
spec sheet for the par t, but caution should be exercised when an APD is cooled.
Low-noise readout circuits usually have high impedance, and an unusually strong current pulse from
the APD could generate a momentary excessive volt-
age that is higher than the readout’s supply voltage,
possibly damaging the input to the amplifier. To prevent this, a protective circuit should be connected
to divert excessive voltage at the inputs to a power
supply voltage line.
As noted in the specification, another consideration is that the APD gain changes depending on
temperature. When an APD is used over a wide temperature range, it is necessary to use some kind
of temperature compensation to obtain operation at
a stable gain. This can be implemented as either
regulation of the applied reverse bias according to
temperature, feedback temperature control using a
thermoelectric cooler (TEC) or other refrigerator, or
both.
Upon request, Voxtel will gladly assist customers
in implementing the proper controls to ensure safe
and reliable operation of APDs in their system.
Voxtel, Inc., 15985 NW Schendel Avenue, #200, Beaverton, OR 97006, www.voxtel-inc.com, T 971.223.5646, F 503.296.2862
Voxtel Literature No. VFP1-xBZB, Version date: 06/2012 ©
Voxtel makes no warranty or representation regarding its products’ specific application suitability and may make changes to the products described without notice.