Sample ELEC 311 Final Questions
Sample ELEC 311 Final Questions
Diode AC small-signal analysis
1. Determine the bias voltage, VBIAS in the circuit shown in Fig. 1. When vin = 100 sin(2π1000t) mV, the
total output voltage, vO(t) is as shown in Fig. 2. (10 marks)
Diode DC analysis
R = 1 kΩ
2. Determine the unknown quantities below. Assume that the diodes are ideal, and please show that any
assumptions you make regarding the states of the diodes are valid. (10 marks)
V1 = ___________. V2 = ___________.
Zener Diode Analysis
3. Consider the circuit shown below in Fig 3. V+ = 12 V +/- 1V. The Zener diode has a VZ0= 5 V and rz
= 10 Ω. For this question, you can assume that this model is valid for any non-zero reverse breakdown
current (IZ > 0). That is, IZK = 0 mA. The resistance R has not yet been specified. There are several
quantities that can be calculated for a Zener diode based regulator. As an example, one can calculate the
maximum current that the regulator can supply while maintaining the desired output voltage. Please see
the last row in the table. The equation in the bottom right cell of the table shows an expression for this
quantity. A quick examination of this expression leads us to the conclusion that to maximize the
maximum available current, we should decrease R, as indicated in the last row of the table.
Please fill in the columns “Direction of R….” and “Rationale” for each of the remaining three
Minimize the power
dissipation with no load is
connected. I.e., P=V+*IR
Improve the line
regulation (consider the
case when no load current
is connected). I.e.,
Improve the load
regulation. I.e., minimize
ΔVL/ΔIL when a load
current IL is connected.
Increase the maximum
current that the regulator
can supply while
maintaining a DC output
voltage near 5 V.
Direction of R for
(i.e., Increase R, decrease
R or R typically has little
effect on the goal)
V + − VZO
Reducing R will
I MAX =
Make R small
BJT DC analysis
4. Below are four possible configurations for establishing DC bias conditions for a BJT. Rank the four
of them from best to worst in terms of the collector current’s insensitivity to β, temperature and the
device’s IS. That is, the best circuit is the one whose collector current will change the least if β,
temperature or the device’s saturation current (IS) changes (2-4 marks?)
Best circuit: ___________.
Two worst circuits (in no particular order): _____ & ______.
5. Assuming β=100, for Circuit A, determine the BJT’s DC terminal voltages and currents. Please label
the terminal voltages and currents on the schematic. (10 marks)
6. This question deals with the circuits in Figure 4, below. The purpose of this question is to analyze an
amplifier that contains a biasing scheme that is frequently used in integrated circuit applications. For this
questions, please use the following:
• For MOSFETs M1 and M2, assume:
o Vt = 0.5 V
o µnCOX(W/L) = 200 µA/V2.
o λ = 0 V-1
• IREF = 100 µA
Please calculate the following:
a) Please find VB and ID in the section of the circuit on the left.
b) If we connect the node labeled “A” to the node labeled “VB” will the node voltage VB change? If
yes, what is its new value? If not, why does it not change? (Hint: consider how much current will
flow into terminal A).
c) Now, with the two circuits connected, analyze the circuit to determine the DC bias conditions for
M2 and the DC output voltage VO.
d) Find the AC small-signal input resistance (RIN) for the node VB for the circuit in the left half of
e) Draw the complete AC small-signal equivalent circuit for the circuits in Fig 4 when VB is
connected to A. You should represent the left half of the circuit by the resistance RIN that you
f) Find the AC small-signal voltage gain vo/vsig.