Film-Diode Process – a breakthrough technology for THz

Technology Solutions for THz-Electronics
Film-Diode Process –
a breakthrough technology
for THz-Electronics
By Dr.-Ing. Oleg Cojocari
www.acst.de
[email protected]
ACST GmbH
Josef-Bautz-Str. 15, 63457 Hanau
www.acst.de
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ACST GmbH: Company profile
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Founded in 2006 as a Spin-Off from TU Darmstadt
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First European commercial supplier of Schottky components for THzApplications
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Close collaboration with leading institutions concerning development of
THz-technology
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www.acst.de
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Space agencies (ESA, DLR,CNES)
Universities (TU Darmstadt, TU Berlin, TU Duisburg, TU Erlangen-Nuremberg, …)
International industry partners
Leading Schottky technology with state-of-the-art performance
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Originally-developed fabrication technology, particularly developed for mm-wave and THz-applications
Discrete and monolithically-integrated Schottky-structures with state-of-the-art performance
So far the only European supplier of Zero-Bias Diodes for THz-applications
First ultra-wideband Schottky detector (75GHz-1.5THz, in year 2008)
First all-European 660GHz Heterodyne receiver with unprecedented performance
Integrated RTD-oscillator with highest ever reported oscillation frequency (1,111 THz)
Anticipated participation in ESA MetOp Second Generation Program
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Planar and vertical structures
Planar structure
Ohmic
Schottky
Semiconductor
No back-side process
needed
Nonuniform distribution
of the current density
Vertical structure
Schottky
www.acst.de
Semiconductor
Ohmic
Uniform distribution
of the current density
across contact area
Back-side processing
required
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QVD Design Concept
Whisker-Contacted Diodes (WCD)
 Vertical structure
 Low parasitics
 Unreliable contact
 No integration possible
www.acst.de
Quasi-Vertical Diode (QVD)
 Quasi-vertical structure
 Reduced series resistance
 Good heat-sink
 Suitable for integration.
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Thermal simulations
Whisker-contacted
diode (WCD)
Planar Surface Channel
Etched Diode (SCE)
Quasi-Vertical Diode
(QVD)
Whisker
70μm thick
GaAs
Contact pad
5µm
anode
Contact pad5µm
Anode-lead
(flip-chip) anode
Back-side 5µm
Air-bridge
contact padanode
Whisker
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70μm thick
GaAs
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Comparative simulation results
Comparative results
of considered structures
The impact of mesa thickness
on thermal performance of a QVD
300
QVD
WCD
SCE
250
200
150
100
50
0
www.acst.de
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Max. temperature, K
Max. temperature, K
350
0
20
40
60
80
Dissipated power, mW
100
h=1m
h=2m
h=3m
h=4m
h=5m
150
100
50
0
0
20
40
60
80
Dissipated power, mW
100
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ACST APD by FD-process
APD side-view
APD front-view
www.acst.de
90µm
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Quasi-vertical approach
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Transferred membrane substrate
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Suitable for both discrete structures and integrated circuits
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Accommodates beamleads, MIM-capacitors, two-level wiring…
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Aims at ultimate performance at MM/SubMM waves
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332GHz Doubler IC
www.acst.de
332GHz Doubler IC mounted in a WG-Block
Fabricated 332GHz doubler
Integrated Circuit
In collaboration with RPG Radiometer Physics GmbH
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www.acst.de
332GHz Doubler performance
• Limited input power of about 40mW-50mW is insufficient to fully
characterize the doubler.
• No sign of saturation: fully-pumped doubler should provide more
output power.
• Higher input power would result in a higher output power.
In collaboration with RPG Radiometer Physics GmbH
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332GHz Tripler IC
IC Front-side
Beamleads
IC Back-side
Diodes
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Heat-spreader
In collaboration with RPG Radiometer Physics GmbH
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RPG 183GHz mixer with ACST APD
www.acst.de
Typical conversion gain and noise
temperature of a 183GHz
subharmonic (LOx2) mixer.
 Noise temperature less than 500K
over full IF-band.
Allan Variance of a 183GHz mixer,
operating in a switched-noise
stabilised radiometer.
 Integration times up to 200 sec.
show no sign of instabilities or
deviation from the radiometer law.
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RPG 424GHz mixer with ACST APD
Tmix=800 to 1200 K
www.acst.de
Conversion= –7 dB
LO Power: 5 mW
Tsys=1800 K
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Fabricated 664GHz Mixer IC
IF-output
Supporting Beamleads
LO-input
MembraneSubstrate
APD-Diode
Measured mixer performance
www.acst.de
Side view of a free-standing IC
In collaboration with RPG Radiometer Physics GmbH
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www.acst.de
First all-European 664GHz receiver system
664GHz Mixer mounted with test horn, 332GHz Tripler, Isolator,
powerful W-band source (x6 internal)
In collaboration with RPG Radiometer Physics GmbH
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Zero-Bias Detector diodes
Discrete Diode mounted on CPW
DC-Diode characteristics
www.acst.de
Back-side contact pads
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Low video-resistance / high current responsivity;
Optically-transparent membrane-substrate ;
Suitable for monolithic integration (THz-MIC);
The technology is suitable for frequencies well beyond1THz.
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183GHz mixer with ACST InGaAs diode
183 GHz InGaAs mixer with different LO-power
www.acst.de
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183
GHz
InGaAs
GaAs
Tmix
700 K
500 K
430 K
Conv
.
Loss
–6.6 dB
–5.5 dB
–4.2 dB
LO
Pow
er
0.34 mW
3.0 mW
2.2 mW
InGaAs built-in voltage (barrier height) significantly lower than GaAs
(0.2eV compared to 0.8eV)
(Reduced LO power required for SHM at 183 GHz: 0.34 mW (10 dB
less!)
In collaboration with RPG Radiometer Physics GmbH
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Achieved Performance (RPG)
Frequency
LO power
183GHz InGaAs
-6.5dB (DSB)
0.34 mW
183GHz GaAs
-4.2dB (DSB)
2 mW
432GHz GaAs
-7.0dB (DSB)
5 mW
660GHz GaAs
Integrated
-8.0dB (DSB)
4mW
Doubler
Input power
44mW
www.acst.de
Conversion L
Output
Power
11mW
Efficiency
DC Bias
>20%
7V
Noise temperature
Noise temperature (old)
Tsys 800K (DSB no correction)
Tmix 700K
Tsys 525K (DSB no correction)
Tmix 430K
Tsys 1700K (DSB no correction)
Tmix 1100K
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Tsys 2300K (DSB no correction)
Tmix 1600K
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Tripler
Input power
67mW
Output
Power
6mW
Tsys 750K (-6.0dB L) RPG
Tsys 2700K (-9.7dB L) RPG
Efficiency
DC Bias
9%
8V
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www.acst.de
ACST THz Detector Module
Si
-L
en
s
An
te
nn
Ze
ro
a
Bi
as
Pr
eA
Di
o
m
p
de
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www.acst.de
Antenna integrated Zero-Bias diode
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www.acst.de
UWB measurements at TUD
Photoconductive generated CW THz signal modulated with 200kHz.
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www.acst.de
UWB measurement results
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www.acst.de
FTIR measurements at DLR
Courtesy of the department THz-Instrumentierung, Institut für Planetenforschung
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www.acst.de
Response time measurement at ANKA
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www.acst.de
Detector response time
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Real pulse length in the accelerator: about 14ps.
Detector response: about 25ps. The delay is considered to be due to
limitations of the SMA connector.
HTS (YBCO) hi-temperature superconductor. -detector-20ps.
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RTD-based THz-MIC
Insulator
Membrane-substrate
Radiating
Vivaldy-antenna
Free-standing THz-MIC
www.acst.de
RTD
Contact pads
for DC-bias
Slot antenna
resonator
In collaboration with TUD
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Mounting approach
Gold-bumps are used to increase local pressure
while keeping low total pressure on the pad.
Mounted circuit by thermo-compression
via insulator membrane
Gold-bump Array
on contact-pads
Thin-film
resistor
www.acst.de
Si-Substrate
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www.acst.de
Assembled RTD-oscillator
MIM
In collaboration with TUD
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www.acst.de
Measured results
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Oscillation frequencies up to 1111GHz.
This is the highest RTD-oscillation frequency reported so far.
In collaboration with TUD
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www.acst.de
Thank You !
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