Intelligent Epitaxy Technology, Inc. Company Information IntelliEPI

Transcription

Intelligent Epitaxy Technology, Inc.
Company Information
IntelliEPI
1250 E. Collins Blvd.
Richardson, TX 75081
USA
E-mail: [email protected]
Web Site: www.IntelliEPI.com
Japanese Agent: ATN Japan
E-mail: [email protected]
Web Site: www.ATNJapan.com
2006
IntelliEPI: Outline
Company Information Update
• Facility and Products
• Capabilities and in-situ monitoring technology
Selected Product Highlights
• HBT Activities (InP-based HBT, HBT w/ GaAaSb base)
• PIN & QWIP
Recognitions
Summary
2006
IntelliEPI: The Company
•
•
A Texas semiconductor manufacturing company located in
Richardson, TX, since January 1999
Founded by Dr. Yung-Chung Kao (from TI), Dr. Paul Pinsukanjana
(from JPL/UCSB), and 2 co-founders (TI), combining experiences in
electronics and optoelectronics
Mission
To serve the III-V semiconductor industries with proprietary MBE
growth monitoring and manufacturing know-how to fabricate bestvalued epitaxial wafers for wireless telecommunication and
optoelectronics applications
2006
IntelliEPI: Facility at Richardson, Texas
Current facility since January 2002: 1250 E. Collins, Richardson, TX
• 23,000 ft2 (production: 13,000 ft2; Office: 10,000 ft2)
• Currently hosts 7 MBE systems (Set up for 8 production systems)
• Class 100 clean room for post growth testing and Large Area
Device processing
2006
MBE Facility at IntelliEPI’s Facility in Richardson, Texas
•
7 MBE reactors:
– One Riber 7000 (7x6”, 14x4”)
– Three Riber 6000 (4x6”, 9x4”, 15x3”)
– Three Riber 49 (4x4”, 5x3”)
•
Dedicated operation and cleaning
facilities designed to handle
phosphorous for all 7 MBE
systems
2006
Riber 7000
Post-growth Characterization Capability
•
Class 100 clean room:
(2000 ft2)
•
Characterization tools:
– X-ray diffraction
– PL mapping
– Surface particle scan
– Hall measurement
– Contactless resistivity mapping
– Electro-chemical CV profiling
– White light reflection
spectrometer
– Electrical CV profiling
– Mercury probe CV
2006
IntelliEPI: Current Available Products
RF and microwave High Speed Digital
•
Applications
•
•
•
•
Device Structure
•
(Red in Production mode)
•
RF components
in handsets
Automotive
radar
Defense related
•
GaAs pHEMT
GaAs mHEMT
InP HEMT
InP HBT
•
•
•
•
•
•
2006
Optoelectronics
OC768- 40Gbps
network
OC192-10Gbps
network
•
Fiber optic
network light
sources and
Photo-detectors
InP HBT
InP HEMT
GaAs mHEMT
GaAsSb DHBT
GaAs mHBT
•
GaAs PIN
InP PIN/APD
QWIP
VCSEL
980 pump laser
•
•
•
•
IntelliEPI: Thickness Uniformity Across Platen for 7x6” MBE
Riber 7000 thickness uniformity
measured by white light reflection
103.0
Normalized thickness (%)
102.0
Ga
Al
101.0
7X6” platen
100.0
99.0
2,500Å GaAs
Outside wafer
Center wafer
98.0
2,000Å AlAs
97.0
0
50
100
150
Platen radial position (mm)
•
•
2006
200
250
GaAs substrate
Thickness variation across platen < 1% across 7X6” platen configuration
Si doping GaAs layer uniformity by contactless resistivity mapping:
– 6” wafer doping variation < 1%
– Difference from center wafer to outside wafer < 0.5%
CBr4 Carbon Doping of P-type InGaAs
1 10
20
9 10 19
8 10 19
7 10 19
6 10
19
5 10 19
4 10 19
3 10
19
2 10
19
0
CBr4
2 10 -8 4 10 -8 6 10 -8
CBr4 BEP (Torr)
8 10 -8
70
60
50
40
Sheet resistance measurement using Lehighton shows
the resistivity across 4” wafer grown from a 4x4 MBE system.
The epi layer is a 350 nm thick InGaAs doped at 4e19 cm-3.
2006
30
0.0
Condition 1
Condition 2
Condition 3
19
19
19
19
2 10 4 10 6 10 8 10
Hole concentration (cm-3)
1 10
20
Production MBE Operation Improvement by In Situ Sensors
•
•
•
•
Run-to-run reproducibility:
– Maintaining critical specification ranges
– Verification of growth process details (condition and layers)
Limitations of ex-situ characterization:
– Slow post-growth feedback
– Additional wafer handling and cost
– Limited information about growth condition profile vs. epi-depth
New product development:
– Faster development cycle time
– Improved performance for more demanding specifications
Bad run detection/correction/termination:
– Loss of wafers: very expensive for larger systems and for InP
– Wasted machine time, materials, & operating expenses
2006
Overview of IntelliEPI in-situ Sensor Technologies
•
Substrate temperature
ABES light source:
Light pipe, or
Heater filament
– Pyrometry
– Absorption Band-Edge Spectroscopy
(ABES): band-gap dependence on temp
•
Materials composition
– Optical-based Flux Monitor (OFM):
atomic absorption of group III fluxes
•
Optical
Pyrometer
OFM
Growth rate
– Optical Reflectometry
– Pyrometric Interferometry
Optical Reflectometry
OFM setup
Absorption Band-Edge Spectroscopy,
Pyrometer, and
Laser Reflection.
2006
PHEMT In-situ Composition Monitoring with OFM
PHEMT Structure
OFM Profile During PHEMT Growth
atomic abosrption (%)
30
20
30348D
Al
Ga
In
AlGaAs
Gate
GaAs/AlGaAs
SL
10
InGaP
Etch
Stop
InGaAs
Channel
n+ GaAs
Cap
n InGaP
Etch Stop
n AlGaAs
Gate
AlGaAs
Spacer
InGaAs
Channel
AlGaAs
Spacer
Si - delta
AlGaAs
GaAs
AlGaAs
SL
0
2000
2500
•
•
time (sec)
3000
3500
GaAs
Buffer
GaAs
Substrate
Direct composition monitoring for each critical layer
In-situ composition monitoring for key layers:
– InGaAs Channel: Accurate x-ray measurement
– AlGaAs Gate: X-ray represents average of SL and Gate
– InGaP Etch Stop: Very thin layer limits x-ray accuracy
2006
IntelliEPI: InP SHBT/DHBT Status
Strong Customer Base Facilitates Fast Structure Optimization
• US and Japan foundries and companies
• Both C and Be doped SHBTs and DHBTs
• HBT-PIN and HBT-Opto structure integration
In-House Large Area Device (LAD) Fabrication Capability
• Fast turn around (~8 hours)
• Correlation with customers device characteristics
• CV measurements for device fine tune
• Correlation with in-house in situ growth database
Developed GaAsSb-base HBT under DARPA TFAST Program
• GaAsSb-base up to 1e20 cm-3 carbon doping
2006
IntelliEPI: InP-HBT Experience Highlights
Pohang University of Science and Technology (POSTECH): InP-HBT results
•
Fmax = 689 GHz (Postech/IntelliEPI, IEDM, San Francisco, December 2004)
University of Illinois, Urbana Champaign: InP-HBT results
•
Most recent data: Ft = 710 GHz (Hafez et al. Appl. Phys. Lett., 87, 2005)
0.25 µm
Base
Emitter
Collector
Vitesse: IntelliEPI is the epi materials supplier for all the InP efforts
•
•
High level of integration VIP-1 SHBT: ~5000 transistors inside 3 mm square die
100% transistor yield for VIP-2 DHBT: over 450 GHz Ft and Fmax (DARPA – TFAST)
IntelliEPI works with several companies in US, Japan, and Taiwan to explore the PA
applications using InP DHBTs
2006
InP/InGaAs SHBT with High Base doping DC Characteristics
•
Layer
com m ent
7
InGaAs:Si
6
Material
Thickness Dopant
(Å)
Level
(/cm 3)
In(x)Ga(1-x)As
500
Si
2.00E+19
InP :Si
InP
500
Si
1.0E+19
5
InP :Si
InP
500
Si
5.0E+17
4
InGaAs :C
In(x)Ga(1-x)As
400
C
8.0E+19
3
InGaAs :Si
In(x)Ga(1-x)As
2,000
Si
2.0E+16
2
InP :Si
InP
100
Si
2.00E+19
1
InGaAs :Si
In(x)Ga(1-x)As
4,000
Si
2.00E+19
Substrate
InP
•
•
•
Current Gain
24 @ 10A/cm2,
25 @ 100A/cm2,
26 @ 1kA/cm2
Base Rbs (TLM)
406 Ohm/sq
Current cross-over
< 1.0E-9 A
Von @ 5A/cm2
542 mV
1E+01
25
20
15
Gain vs Current Density
10
5
1E-03
1E-05
1E-07
IC
IB
1E-09
0
1.E+00
Gummel Plots
1E-01
Current (A)
Current Gain
30
1.E+01
1.E+02
1.E+03
Current Density(A/cm2)
1.E+04
1E-11
0.0
0.5
1.0
Vbe (V)
2006
X-ray data of GaAsSb uniformity across 4x4” platen
4”
r = 98.5 mm
r = 78.5 mm
r = 58.5 mm
Intensity (arb units)
0.520
Sb Compositon (x)
r = 118.5 mm
r = 113.5 mm
Center of Platen
0.515
r = 43.5 mm
r = 38.5 mm
0.510
Outside of platen
4 X 4" platen
0.505
5 X 3" platen
0.500
-1500
0.495
-1000
-500
0
500
1000
1500
Diffaction Angle (arc-sec)
0.490
0
50
100
Position on Platen (mm)
•
GaAsSb composition uniformity is within ±0.1 atomic percent
across 4x4” platen
11
2006
InAlAs/GaAsSb/InP DHBT DC characteristics
•
InAlAs emitter GaAsSb DHBT (Improved E-B junction )
Layer
Com m ent
Material
x
8
Emitter cap
In(x)Ga(1-x)As
0.532
7
6
Emitter cap
Emitter
InP
InP
5
Emitter
In(x)Al(1-x)As
4
Base
GaAs(1-x)Sb(x)
3
Collector
InP
2
Subcollector 1
InP
1
Etch stop
In(x)Ga(1-x)As
Thick. (Å) Dop.
Level
(/cm 3)
Type
1,000
Si
3.0E+19
N+
300
300
Si
Si
5.0E+18
5.0E+17
N+
N
0.522
150
Si
5.0E+17
N
0.513
400
C
4.5E+19
P+
2,000
Si
3.0E+16
N
0.532
500
Si
5.0E+18
N
2,000
Si
3.0E+19
N+
•
•
•
Substrate
2.0E-02
1.8E-02
1.6E-02
1.4E-02
1.2E-02
1.0E-02
8.0E-03
6.0E-03
4.0E-03
2.0E-03
0.0E+00
34.3 @ 10A/cm2,
36.6 @ 100A/cm2,
38.1 @ 1kA/cm2
Base Rbs (TLM)
885.9 Ohm/sq
Current cross-over
< 1.0E-9 A
nc = 1.10; nb = 1.29
IC
IB
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
1.0E-07
1.0E-08
1.0E-09
0.0
2.0
Vce (V)
2006
1.0E-01
Current (A)
Ic (A)
I-V C h aracteristics, 50x50 u m 2
Current Gain
4.0
0.0
0.5
1.0
1.5
Vbe (V)
InAlAs/GaAsSb(1E20 cm-3)/InP DHBT DC Characteristics
InAlAs emitter GaAsSb DHBT (Thin Base/Heavy Doping )
Layer
Com m ent
Material
x
8
Emitter cap
In(x)Ga(1-x)As
0.532
7
6
Emitter cap
Emitter
InP
InP
5
Emitter
In(x)Al(1-x)As
4
Base
GaAs(1-x)Sb(x)
3
Collector
2
1
Thick. (Å) Dop.
Level
(/cm 3)
Type
1,000
Si
3.0E+19
N+
300
300
Si
Si
5.0E+18
1.0E+18
N+
N
0.532
150
Si
1.0E+18
N
0.513
200
C
1.0E+20
P+
InP
2,000
Si
3.0E+16
N
Subcollector 1
InP
500
Si
5.0E+18
N
Etch stop
In(x)Ga(1-x)As
2,000
Si
3.0E+19
N+
0.532
Substrate
I-V C h aracteristics, 50x50 u m 2
Current (A)
1.2E-02
1.0E-02
Ic (A)
8.0E-03
6.0E-03
4.0E-03
2.0E-03
0.0E+00
2.0
4.0
Vce (V)
6.0
•
•
•
Gain
18.8 @ 10A/cm2,
20.5 @ 100A/cm2,
22.1 @ 1kA/cm2
Base Rbs (TLM)
956.4
Current cross-over
1.0E-9 A
nc =1.08; nb = 1.30
IC
IB
0.0
0.0
2006
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
1.0E-07
1.0E-08
1.0E-09
•
0.5
1.0
1.5
Vbe (V)
Low Intrinsic Background InGaAs on InP
CV Doping profile vs. depth
CV profile comparison
17
10
0.15
1016
Ne (cm-3)
2
Cap/Area (fF/µm )
MOCVD
Typical MBE
Optimized MBE
1015
0.1
14
10
1013
5000
0.05
1 104
1.5 104
2 104
Depletion Depth (Å)
2.5 104
P+ layer (InP)
i-layer (2um InGaAs)
0
-2
-4
V bias (V)
-6
-8
-10
IntelliEPI’s optimized MBE PIN advantages:
• Nearly depleted at 0V bias
• Background doping level better than
MOCVD
• Intrinsic InGaAs mobility from 10 –
12x103 cm2/V·sec
2006
Comparison of InGaAs Hall Mobility
15,000
Hall Mobility (cm2/Vs)
0
2
N+ layer (InP)
InP substrate
IET typical conditions
IET optimized conditions
Published data from MBE
Published data from MOCVD
13,000
11,000
9,000
7,000
5,000
1.00E+14
1.00E+15
1.00E+16
-3
Electron Concentration (cm )
High Speed InGaAs/InP PIN Photodetector from MBE
3 dB Bandwidth @ 1550 nm
Frequency (Hz)
1.E-08
1
0.98
0.96
0.94
0.92
0.9
0.88
0.86
0.84
0.82
0.8
0C
40C
80C
120C
0
•
•
-1
-2
-3
Applied voltage (V)
-4
-1
-2
-3
Applied voltage (V)
-4
-5
3 dB Bandwidth Histogram Across 4” Wafer
1200
1000
Standard I-layer Doping
Bias
@ –2V
800
600
Improved I-layer Doping
400
200
0
2.0
Responsivity (A/W)
Photo response @ 1550 nm
0
6.0
Data
Courtesy
of
VITESSE
0.E+00
5.6
30
5.2
25
4.8
20
4.4
15
4.0
10
Reverse bias voltage (V)
40C
2.E+09
3.6
5
4.E+09
3.2
0
6.E+09
2.8
1.E-10
8.E+09
2.4
1.E-09
Number of Results
Dark current (A)
Dark Current
3dB Bandwidth (GHz)
-5
75 µm Diameter Active Area
Average 3 dB bandwidth of ~ 4.6 GHz @ –2V
Dark current well below 1 nA @ –2V
2006
Count
IntelliEPI: QWIP Production Experience
10
6
10
5
10
4
Riber6000
4x6” Platen
004 x-ray scans across platen
Platen
center
6" Inner
6" center
6" outer
1000
100
Courtesy of QmagiQ
10
10511F
1
-4000
•
•
•
•
2006
-2000
0
Angle (Arcsec)
2000
4000
8.6 µm thermal image taken
with large format 640x512
QWIP FPA IntelliEPI. Die size
~16x13 mm2.
Stability of growth rate during long repeated structure as indicated by
narrow x-ray peaks
Excellent interface and materials quality as indicated by sharp x-ray peaks
±0.5% thickness uniformity across 6 inch diameter wafer based on x-ray
Achieved 100% pixel yield with 320x256 format FPA
IntelliEPI: Device Data for QWIP FPA
Normalized Spectra
35
-5V
-4V
-3V
-2V
-1V
0.8
Blackbody Source Temperature = 500 K
25
BB
0.6
Blackbody Responsivity
30
(mA/W)
1
R
0.4
0.2
20
1
2
3
4
5
6
7
8
9
15
10
5
0
5
6
7
8
9
Wavelength (µm)
10
11
0
-5
Photoresponse (mV/degree) @ 25 C
-4
-3
640x512
-2
-1 0 1
Bias (V)
2
3
4
5
NETD (mK) for 25-C Scene Temperature
6000
4000
5000
320x256
3500
F/4 Optics
3000
320x256
4000
Number of Occurences
F/4 Optics
Number of Occurences
Normalized Intensity
1.2
mean = 39.7 mV/K
sigma = 0.79 mV/K
3000
sigma/mean = 2%
2000
mean = 22.3 mK
sigma = 2.8 mK
2500
sigma/mean = 12.5%
2000
1500
1000
1000
500
0
37
•
•
•
•
•
2006
38
39
40
41
42
Photoresponse Value (mV/degree)
43
44
0
10
15
320x256 and 640x512 formats
LWIR band, 8.6-mm peak wavelength
Optical response uniformity ≈ 2%
Average NEDT less than 25 mK at F/4
Operability greater than 99.8%
20
25
NETD Value (mK)
30
35
Data
Courtesy
of
QmagiQ
40
320x256
IntelliEPI: Dual-color QWIP
Data
Courtesy
of
QmagiQ
•
•
•
2-color per pixel in 320x256 format
Dual-band for MWIR and LWIR
Epi materials on 6” GaAs
2006
QA/QC Procedures
•
•
SPC process is implemented to all production jobs
System Calibrations to ensure accuracy and consistency in
– Doping concentration
– Growth rate and composition
– Temperature control for different platens and loading
– Reproducible system conditions for growth
•
•
•
2006
Incoming materials QC to ensure all substrates qualification
Final products QC to maintain consistency in epi-wafer
quality and documentation accuracy
Currently on schedule to be ISO9001 compliant in 1Q/05 and
ISO certified within 2005
IntelliEPI: Sample SPC Charts – Total Sheet Resistivity
2006
IntelliEPI: Sample SPC Charts – Defect Density
2006
IntelliEPI: Sample SPC Charts – Haze ppm
2006
IntelliEPI: Customer Feedback Data Analysis (Idss)
Summary for Avg_Idss
A nderson-D arling N ormality Test
System
D-03
D-04
F-01
F-03
33.6
35.0
36.4
37.8
39.2
40.6
42.0
43.4
A -S quared
P -V alue <
2.61
0.005
M ean
S tD ev
V ariance
S kew ness
Kurtosis
N
38.925
1.440
2.073
-0.192924
0.109487
4969
M inimum
1st Q uartile
M edian
3rd Q uartile
M aximum
33.800
37.960
38.980
39.960
43.880
95% C onfidence Interv al for M ean
38.885
38.965
95% C onfidence Interv al for M edian
38.920
39.020
95% C onfidence Interv al for S tDev
9 5 % C onfidence Inter vals
1.412
1.469
Mean
Median
38.900
•
•
38.925
38.950
38.975
39.000
39.025
Very tight Idss data distribution (~3%) for 5,000 pHEMTs over 4 campaigns
Slight adjust-up based on customer preference in the latest campaign
2006
IntelliEPI: Customer Feedback Data Analysis (Vpinch-off)
Summary for MED_Vp
A nderson-D arling N ormality Test
System
D-03
D-04
F-01
F-03
-1.05
-0.98
-0.91
-0.84
-0.77
-0.70
-0.63
A -S quared
P -V alue <
10.12
0.005
M ean
S tD ev
V ariance
S kew ness
Kurtosis
N
-0.87738
0.05424
0.00294
0.29836
1.23699
3613
M inimum
1st Q uartile
M edian
3rd Q uartile
M aximum
-1.08000
-0.91000
-0.88000
-0.84000
-0.58000
95% C onfidence Interv al for M ean
-0.87915
-0.87561
95% C onfidence Interv al for M edian
-0.88000
-0.88000
95% C onfidence Interv al for S tDev
9 5 % C onfidence Inter vals
0.05302
0.05552
Mean
Median
-0.880
•
•
-0.879
-0.878
-0.877
-0.876
-0.875
Vp data distribution tight (< 6%) for 4 campaigns
Very little machine/campaign dependence found in Vp data
2006
IntelliEPI: 4-Times (01-04) Supplier of the Year Award from VITESSE
•
VITESSE SEMICONDUCTOR CORPORATION
VITESSE
•
741 Calle Plano
Camarillo, CA 93012
Tel (805) 388-3700
Fax (805) 987- 5896
April 15, 2002
Dr. Yung-chung Kao
President/CEO
201 East Apapaho Road, Suite 200
Richardson, TX 75081
Dear Dr. Kao:
It is my pleasure to advise you that Intelligent Epitaxy Technology, Inc. has been
selected as one of eleven Suppliers of the Year for 2001.
•
•
As you may know, we have a Supplier and Subcontractor Rating Procedure in place
and we use the rating results to recognize top performers. The rating definitions are
Quality, Flexibility, Pricing, Customer Service and Strategic Advantage.
In past years, we have held a Supplier of the Year Dinner. However, due to the
industry downturn and in order to curb expense for all of us, I would like you to
accept the enclosed Plaque with my congratulations for a job well done.
It is my sincere and earnest hope that we continue to maintain this mutually
beneficial relationship in the years ahead.
•
Sincerely,
Louis R. Thomasetta
President
Chief Executive Officer
c.c. Mr. Jim Fang
Sales Marketing Director
2006
•
Vitesse is World’s leading InP
foundry
All Vitesse’s 10G and 40G InP
circuits (HBT and PIN) are solely
based on IntelliEPI’s epi-wafers
IntelliEPI supplies all InP epi-wafers
for production and development
IntelliEPI received awards due to
quality, price, service, and
innovation
IntelliEPI’s in-growth sensor data is
open to Vitesse processing
correlation
IntelliEPI provides 100% customer
satisfaction guaranty
IntelliEPI: Summary
IntelliEPI’s real-time sensors monitor growth and maintain
reproducible conditions
• Non-invasive; early identification of problems during run:
immediate feedback
• Yield improvement, fast product development and delivery
IntelliEPI developed advanced MBE growth technology and materials
• High volume GaAs product such as PHEMTs for handset switch
applications
• High performance InP based HBTs and PINs for fiber optical
applications
IntelliEPI provides 100% customer satisfaction guaranty
2006

Intelligent Epitaxy Technology, Inc. Company Information IntelliEPI

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