ULTECH CATALOG 2014

www.ultech.co.kr
Head Office
17, Seongseogongdan-ro 11-gil, Dalseo-gu, Daegu Korea. 704-240
Daegu High-tech zone
TEL : 82-53-583-7565 / FAX : 82-53-583-6872
http://www.ultech.co.kr
2013. 07. 30
ULTECH CO.,LTD.
Technology innovation with advanced technology We create the future
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SPUTTER
Features
·Excellent of film quality
·High thickness uniformity by functions of the substrate rotation and
revolution, T/S distance controls
·Possible to attach up to 6 target guns
·Substrate cooling or optional heating
·High conductance vacuum pumping
·Cluster system up to 2 process modules
·Optional pre-cleaning or pre-heating treatment
·Cassette type transfer chamber
·Easy and user-friendly control system & software
Applications
·Conventional materials coating
·Alloys and intermetallic compounds coating
·Interleaving parallel and antiparallel magnetic thin films layers coating
·Interleaving conducting, semiconducting, and insulating layers coating
·MR, GMR and spin valve devices
·Reflective and anti-reflective optical coating
·Opto-electronic films coating
·Reactive sputtering for hard coating
SPUTTER (Industrial)
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Features
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·This is a batch-type sputtering equipment in which a polygonal cylinder substrate
holder forms film while rotating around a vertical rotation shaft
·Max. 4 targets can be mounted for 4 layers of metal thin films depostion
·Double-side coating available in vacuum mode with changing the substrate face
·Excellent Throughput
·Optional substrate heating
·High conductance vacuum pumping
·Easy and user-friendly control system & software
Applications
·Metal electrode deposition of information & communication device
(Resonator, filter, oscillator, capacitor, PTC, NTC, etc.)
·Medical appliances coating (Probe for ultra-sonic diagnosis)
·Industrial machinery & tools hard coating
·Metal coating on glass
·Metal coating on polymer substrate
SPUTTER (Roll to Roll)
Features
·This is a roll-to-roll sputter system for functional film manufacturing, such as
flexible display film, window film and so on.
·The system is possible to produce single layer and multi-layer coating with
high-functionality.
Applications
PLD
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·Metal or ITO film for Touch screen panel
·Metal or TCO coating for Flexible solar-cell
·Window film
·Low-e film
·AR film
·Very high deposition rate
·Processing ability in the high oxygen pressure
·Multi-layer deposition (up to 6 layer)
·Excellence in substrate heating solution
Applications
·Superconducting material and magnetic materials deposition
·Oxide materials deposition
·Single and multi-layer thin film deposition
Technology Innovation
Features
E-beam /
Thermal Evaporator
Features
·High deposition rates
·Enables rapid processing for lift off and/or step
coverage applications
·High throughput batch process
·Crystal thickness sensor for precise thickness control
·Source tray with single or multi-pocket e-beam sources and/or one or
more thermal evaporation sources
·Optional substrate heating
·High conductance vacuum pumping
·Easy and user-friendly control system & software
Applications
·Conventional materials coating
·Mirror reflective coating
·Monolayer and multilayer filter and
broadband antireflective(BBAR) coatings
·Spintronix research
(UHV & very low temperature system)
OLED System
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Features
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·Linear type system
·Multi source deposition
·Pretreatment chamber : O2, CF4 plasma
·Deposition chamber #1 : Organic EL deposition
·Deposition chamber #2 : Metal deposition
·Glove box
·Encapsulation : UV curing & Dispenser
·Substrate transfer module : loading/unloading used MTR (Magnetic Transfer Rod)
·Mask alignment
·Thickness control
·Optional substrate heating
·High conductance vacuum pumping\\
Applications
·Mono, Area panel & source testing
·Mono, Area color OLED device fabrication
Horizontal
LPCVD/FURNACE
Features
·The flexible use of 1 to 4 stacks
·Excellent temperature uniformity
·High throughput batch process
·Automatic loading and unloading of the system result in high
reliability and stabile process conditions
·High conductance vacuum pumping options
·Easy and user-friendly control system & software
·Separate circuit protects the furnace from exceeding rated
temperature limit
Features
·The flexible use of 1~2 stacks
·Excellent temperature uniformity
·High throughput batch process
·Automatic loading and unloading of the system result in high reliability
and stabile process conditions
·High conductance vacuum pumping options
·Easy and user-friendly control system & software
·Separate circuit protects the furnace from exceeding rated temperature limit
Applications
·Low stress / Stoichiometric silicon nitride
·Poly / doped-poly silicon
·Silicon oxide
·Wet / Dry oxidation, Annealing
·LTO
Technology Innovation
Vertical
LPCVD/FURNACE
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■ Poly silicon LPCVD
PEALD/ALD
Features
·Wide choice of deposition sources
·Minimize reactor volume
·Wide temperature range options
·Self-distributed gas injection
·Fast switching speed
·Liquid source delivery unit
·Cluster system up to 2 process modules
·Cassette type transfer chamber
·Easy and user-friendly control system & software
■ Traveling Type
Applications
·High-k Gate Dielectrics
·Diffusion barriers
·High-k Dielectrics
·Passivation Layers
·Transparent Conductors
PECVD / MOCVD
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Features
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·High thickness and refractive index uniformity
·Wide temperature range options
·Heighten Homogeneity of gas distribution in the chamber
supplying gas with Showerhead
·High conductance vacuum pumping for the low pressure process
·Cluster system up to 2 process modules
·Cassette type transfer chamber
·Easy and user-friendly control system & software
Applications
·Active optical device layers
·Interlayer dielectrics
·Gate oxide
■ Shower Head Type
HOT WIRE CVD
Features
·Wide choice of deposition sources
·Wide temperature range options
·Cluster system up to 2 process modules
·Cassette type transfer chamber
·Easy and user-friendly control system & software
Applications
Graphene/CNT/NanoWire/
SiGe/SiC CVD
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·Amorphous silicon deposition
·Micro-crystalline silicon deposition
·PIN structure deposition
·Diamond deposition or Diamond coating
·High hydrogen content nitride film deposition
·Graphene CVD
·Silicon nano wire growing
·Carbon nano tube CVD
·SiC epitaxy
Technology Innovation
Applications
ICP-RIE / RIE
Features
·Produces a uniform, plasma
·Provides the process window flexibility required to etch a wide variety of
advanced device structures
·Showerhead gas injection
·High conductance vacuum pumping to remove reaction by-products
·Cluster system up to 2 process modules
·Cassette type transfer chamber
·Easy and user-friendly control system & software
·Optional high-density plasma (ICP source)
Applications
·Silicon etching (MEMS & NANO)
·Dielectrics etching (SiO2,Si3N4,etc.)
·Polymide etching
·Compound semiconductors etching (GaAs, GaN, etc.)
■ Silicon 20nm slip line etching
ASHER
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Features
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·Etching the resist film using O2 plasma
·Downstream RF plasma module on the top of the process chamber
·Provides a compact system design with high repeatability and residue free
process using RF plasma source
·The downstream RF source delivers the excellent process control and
damage free to the underlying exposed film
·Optional substrate heating
RTP
Features
·Available either ATM or Low pressure
·Wide operating temperature band
·Popular Low Cost Design model for R&D purpose
·High conductance vacuum pumping options
·Easy and user-friendly control system & software
·Separate circuit protects heater from exceeding rated temperature limit
Applications
·Thin gate oxidation (nano device)
·Rapid annealing
·Silicidation (TiSi, CoSi, etc.), implant anneal (SD, well anneal),
oxidation, dielectric film densification
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PLASMA IMMERSION
ION IMPLANTATION
Features
·Dopant : N-type (P, As) , P-type (B)
·Dose : 5 × 10 ~ 2 × 10 cm
·Energy range : 50eV ~ 10keV
·Throughput : 60 wafer/hour
·Dose control : 4 Faraday cups
·Base pressure : < 7 × 10 Torr
·Automated Loadlock
·Safety interlock & Gas detection
·Easy and user-friendly control system & software
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Technology Innovation
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Applications
·Ultra-Shallow Junction Doping for sub-100 nm CMOS
·Conformal doping of non-planar CMOS and other electronic devices
·Poly-Si Gate & Trench Sidewall Doping
·Gate Dielectric Modification
·Layer transfer technology for “SOI”, “Si-on Anything” and other electron materials
(SiC, GaAs, InP, GaN, etc)
·SOI by SPIMOX (Separation by Plasma Ion Immersion Implantation of Oxygen)
■ CMOS Application (Ref. IEEE Article)
SPRAY & SPIN COATER
Features
·Uniform coating of topography such as V-grooves and trenches
·Small compact footprint
·Designed for R&D and low volume manufacturing
·Excellent repeatability and process uniformity
·Easy and user-friendly control system & software
Applications
·Photo-resist Coating
·Spin-On-Glass Coating
·Organic Coating
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WET ETCHER
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Features
Applications
·Improving roughness of the etching
surface using Megasonic
·Excellent etching rate & uniformity
·PTFE solution for bath material of
Etching and circulation
·KOH and TMAH for etching solution
·Etching solution heating
·Si Anisotropic Wet Etch
·PSL, Electroplating
·V-Groove, U-Groove, Cavity formation
·Membrane, microchannel formation
WET BENCH
& DI GENERATOR
Features
·Minimizing foot print from optimizing design in fluid tank
·Smaller usage of chemicals and pure water because of excellent design in
piping
·Easy control of temperature, flux, and mixing rate of the fluid
·Easy control and maintenance
·Available mixing of Cleaning / Chemical etching / Solvent / Developer bench
Applications
·Photoresist(PR) stripping / developing
·Mixing of cleaning / chemical etching / solvent / developer bench
·RCA cleaning
Technology Innovation
·Sample size & throughput : Up to 8inch, 1 cassette (25 wafers)
·Cleaning wet bench : SC-1/2, DHF, QDR, KOH, H3PO4
·Etching wet bench : DHF, Metal Etch, QDR
·Solvent wet bench : Solvent, QDR
·Developer wet bench : Developer, QDR
·Spin dry bench (option)
·Process control : Manual process control (option - PLC)
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Specifications
Solar Cell
SOLTEX
Applications
·Cleaning, Saw Damage Etching (SDE) (solar cell process)
·Texturing (solar cell process)
·PSG removal (solar cell process)
Features
·Wafer size : 6inch / 156mm×156mm
·Throughput : Up to 2400wafers/hr
·Process Sequence (Cleaning/Texturing) :
Cassette loading → Wafer cleaning (SDE) → DI rinsing →
Texturing → DI rinsing → Oxide removal → DI rinsing →
Hot DI rinsing → Hot air drying → Cassette unloading
·Process Sequence (PSG removal) :
Cassette loading → PSG removal → DI rinsing →
Hot DI rinsing → Hot air drying → Cassette unloading
·Cassette capacity : 200wafers/cassette
·Cassette moving by Robot
·Process control : Auto process control (PC)
SOLDOP
Applications
·P-N junction formation (Solar cell process)
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Features
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·Wafer size : 6inch / 156mm×156mm
·Throughput : Up to 400wafers/hr
·Process : n-type doping in p-type wafer
·Boat capacity : 500wafers/cassette
·Heater : Max. 1200℃, 6-zone control
·Precursor (Source) : POCl3
·Process gases : O2, N2
·Process control : Auto process control (PC)
Turnkey Line
Wafer IN
Cleaning & Texturing
P.N Junction Formation
Edge Isolation
PSG Removal
AR Film Formation
Screen Printing/Drying
Firing
Inspection Sorting
SOLARC
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Cell OUT
Applications
Features
·Wafer size : 6inch / 156mm×156mm
·Throughput : Up to 400wafers/hr
·Process : Silicon nitride deposition (AR coating)
·Wafer tray capacity : 25wafers/tray
·System configuration : Load table - Loading chamber
- Process chamber - Unloading chamber - Unload table
·Plasma source power : 3kW, 13.56MHz (RF)
·Ultimate pressure : 5E-3 Torr
·Process gases : SiH4, NH3, N2
·Process control : Auto process control (PC)
Technology Innovation
·AR film formation (Solar cell process)