innovation for industry

Transcription

innovation for industry
innovation for industry
sommaire
About Leti
page 10
Highlights
Applications page 22
Enabling technologies
e 11
and devices pag
page 8
nko
in collaboration with Shi
3D 300mm Si interposer
n
nt solar-power conversio
World record for eff icie
net works
com
ers for superfast tele
III-V/silicon photonics las
in-package
strates optical net workHubeo+ project demon
loiting TV white space
ces technolog y for exp
van
ad
t
jec
pro
OS
SM
Qo
ustry
pipe for the energy ind
A nex t-generation smart
y breakthrough
cop
ros
technique offers mic
ing
ag
-im
ee
sfr
len
w
Ne
technolog y node
advantages at the 14nm
Demonstrating FD-SOI’s
sen sors for smart phones
aller, low-power MEMS
sm
er,
ap
che
ves
dri
y
Leti M&NEMS technolog
and wearables
system for smart phones
A very precise location
ing
nts using len sfree imag
Building smart instrume
system
tion
tec
l for an explosive-de
An swering the EU’s cal
ide-voltage-range DSP
Superfast FD-SOI ultraw
sen sors
el packag ing for inf rared
Revolutionary pixel-lev
tion system
Light success in IR detec
Ex tending SEEL and En
Ear th’s magnetic field
A Swarm of data about
rof luidic dev ices
n Collider with silicon mic
dro
Ha
RN
CE
ge
Lar
Cooling in the
living lab
Spain’s smart city and
page 32 Awards
page 38
Startups
page 42 Leti’s
of the year
offer
page 58 General
organization
page 60 History
4
5
Leti Activity Report > 2013
©
dar t
CEA-Leti /L. Go
edito
Laurent Malier,
Director of Leti,
,
Carnot In stitute
pus
m
Ca
EC
MINAT
Energy, Communication, Health and Well-being bears major
challenges for our society. LETI’s reseach areas are driven
from them, resulting in innovative processes, devices and
systems. In 2013, remarquable results were achieved with our
industrial partners, and several of them entered production.
Demonstrating FD-SOI’s
industrial availability
Digital processing and CMOS technologies drive the performance
of most data-based applications, and its energy-efficiency is a
critical requirement, from servers to large-scaled deployed sensor
networks for Internet of Things. In this global race to powerfull
and efficient CMOS, Grenoble ecosystem took a daring path some
years ago, which proved to be a leading solution, known as FDSOI technology. Unmatched results were demonstrated at 28nm
generation, in terms of speed and low-voltage operation, and this
technology is now in production, while future generations are
being developed, still proving major competitive advantages.
A world of Sensors
Size, performance, and cost determine the value of microelectronic devices for designers, OEMs, companies and, ultimately,
end users. This was proven again in 2013. Leti’s deep and diverse
sensor expertise, developed over many decades, has positioned it
as a key supplier of technologies, components and systems that
meet these requirements, along with innovative power-supply
technologies.
Imaging is one example, where Leti built a world-class global environment around its imaging platform serving industrial partners.
Leti offers a wide and unique range of imaging opportunities covering the infrared and the visible spectrums, and extending to the
fields of millimetric, terahertz and X-ray imaging, with platforms
6
to wafer-scale
sensing materials
m
fro
n
tio
va
no
wn to
targeting in
epts and going do
g disruptive conc
in
lop
ve
De
g.
in
ca
ag
pack
sional appli tions
Leti covers profes
g,
in
ur
ct
fa
nu
ma
ips
transfer to
through partnersh
or consumer needs,
e
tiv
mo
to
au
as
ll
as we
nics and EEV.
fradir, STMicroelectro
. Using
with Trixell, ULIS, So
are another example
s
or
ns
se
er
et
om
Inertial and magnet
ned and manufac2013, Tronics desig
in
y
log
no
ch
te
MS
celeromeLeti’s M&NE
chips with three ac
MS
ME
m
do
ee
-fr
tured 6-degrees-of
unique magnetoa single die. Leti’s
on
es
op
sc
ro
gy
e
re
nched by
ters and th
tellites that were lau
sa
m
ar
Sw
e
re
th
e
meters on board th
ng unprecedented
last fall are providi
cy
en
Ag
e
ac
Sp
an
field. This
the Europe
Earth’s magnetic
of
s
ce
ur
so
e
th
information about
ckaging systems
ce indefinitely in pa
an
rm
rfo
pe
nt
lle
ce
requires ex
onment.
e harsh space envir
th
d
an
st
th
wi
n
ca
that
ine
Innovative Medece,ca joint initiative with the University
inat
s in mediInitiated by Leti, Cl
thers competence
ga
d
an
,
13
20
in
ed
Hospital, was open
eting the developd engineering. Targ
an
y
log
no
ch
te
y,
d on new
cine, biolog
dical protocols base
me
ive
pt
ru
dis
of
ment and validation
and neurodegenefocuses on cancer
ec
at
in
Cl
,
es
vic
nstrated a
medical de
ative, we first demo
iti
in
is
th
h
ug
ro
Th
rative diseases.
capture of key bio
biopsy proving the
or
um
-t
ain
br
is
r
ol
fo
oc
protocol
sive. This new prot
, and being less intru
ion
at
rm
ams,
fo
te
in
l
al
ica
dic
log
ral me
nated towards seve
mi
se
dis
d
an
ed
at
being valid
model.
te value of Clinatec
dia
me
im
e
th
g
in
ov
pr
tnerships
The power of perars, we develop technologies that meet
partn
interconnecWorking with our
in an increasingly
s
ed
ne
g
sin
es
pr
a wide range of
ility to improving
pporting sustainab
su
m
fro
g
in
ng
ra
,
ted world
king transport
ty & security to ma
fe
sa
g
rin
su
en
m
health care, fro
mentation of the
fuel the rapid imple
ng
lpi
he
d
an
t,
ien
more effic
Internet of Things.
ry through coopeinnovation in Indust
t
or
pp
su
to
is
ion
rtners from
LETI miss
do work with our pa
we
l,
de
mo
r
ou
to
ll
ration. Thanks
e present report wi
into production. Th
r
fe
ns
tra
e
th
an
to
erships d
research
lights of these partn
gh
hi
d
an
s
ple
am
provide many ex
t-ups or with large
all companies, star
sm
th
wi
ed
ev
hi
ac
ck to us with
results,
a look and come ba
ke
Ta
s.
ion
at
or
rp
international co
shape the future of
e solutions will help
os
wh
s
ge
en
all
ch
the next
th
microelectronics.
s capabilities in bo
ts stem from Leti’
en
em
ev
hi
o
ac
als
nt
ey
joi
ns; th
These
d systems applicatio
an
n
tio
va
no
in
cs
microelectroni
s to the success of
itment of Leti team
mm
co
ng
ro
st
e
th
te
illustra
their partners.
ur success is our
Simply because yo
success.
7
Leti Activity Report > 2013
• 280 M€/8
0% from con
tracts
• 39 M€ Cap
Ex
Team:
tion and
By creating innova
industry,
transferring it to
between
Leti is the bridge
producbasic research and
d nanotion of micro- an
improve
technologies that
around
the lives of people
by its
the world. Backed
patents,
portfolio of 2,500
large inLeti partners with
d startdustrials, SMEs an
vanced
ups to tailor ad
tr en gso lu ti on s th at s
pe ti ti ve
th en t he ir c om
launched
positions. It has
tups. Its
more than 50 star
neration
8,000m² of new-ge
feature
cleanroom space
m wafer
200mm and 300m
icro and
processing of m
applicanano solutions for
space to
tions ranging from
ti’s staff
smart devices. Le
includes
of more than 1,700
partner
250 assignees from
based in
companies. Leti is
and has
Grenoble, France,
d Japan.
offices in US, an
for more
Visit www.leti.fr
information.
0
• Researchers: 1,70
0 and post-PhDs: 40
• PhD students: 20
: 37%
• Foreign students
ed
ner companies host
rt
pa
om
fr
s
er
ch
ar
• Rese
0
in Leti facilities: 25
About Leti
About Leti
Budget:
Patents:
• Patents (2013): 306
• Patents in portfolio: 2,500
• Under licence: 40%
Collaborators:
• Startups: 50
• Common labor
atories: 50
• Industrial par
tners: 350
Platforms:
m²
• Cleanroom space: 8,000
.
Ph
ti /
/Le
©
8
pa
op
Str
A
CE
9
Leti Activity Report > 2013
1
Enabling
technolog ies
and dev ices
Highlights
Highlights
Enabling 1
technologies
and devices
2
Application s
10
CEA/Leti / Ph. Stroppa
©
11
Leti Activity Report > 2013
Enabling technologies
and devices
Highlights
Thierry MOURIER & Jean CHARBONNIER
[email protected] & [email protected]
By Eric Guiot, R&D process development manager, Soitec
[email protected] / www.soitec.com
Thierry Salvetat / [email protected]
0.1mm
Silicon interposer
Stacked Chip
40mm
Organic substrate
CEA/Leti
©
3D 300mm Si
interposer in
collaboration
with Shinko
For the past three years,
Leti and Shinko Electric
Industries have worked on
development, prototyping
and technology transfer of
300mm silicon interposers.
In 2013, their common lab demonstrated the world’s first
3D 300mm Si interposer with
world-class electrical and
reliability test results, and
established the Leti-Shinko
partnership among the most
significant developments in
this field.
Wide interposer integration
causes very high device warpage that is incompatible with
further chip soldering and
board mounting due to high
stresses induced by a thin
silicon core and thick integrated materials. To overcome that, mechanical properties and thermal behavior
of deposited layers on both
12
Enabling technologies
and devices
Final integrated device.
CEA/Leti
©
Silicon interposer tech nology offers a
number of compelling advantages for nextgeneration applications. These passive intermediate layers can be used to boost the useable performance
and reduce the footprint of advanced silicon chips, providing much of the benefit of 3D packaging without
requiring wholesale changes to design and manufacturing
processes.
sides of the wafer must be
balanced to account for global technological integration
of multichip stacking.
Leti’s 300mm pilot line
The lab’s primary work in 2013
involved setting up measurement and modeling of the
properties and thermomechanical behavior of each
material to establish a material database. With that data,
a predictive model was built,
taking into account the complete integration and design
of the targeted device and
leading to a technological
adaptation of materials.
On that foundation, full integration was achieved, starting
from bulk silicon processing
on Leti’s 300mm pilot line to
a mounted device at Shinko’s
site in Japan.
The common lab’s realization
of a 3D 300mm silicon interposer demonstrator allows
Shinko to propose a high-end
prototype and even first products to meet its customers’
requests for this technology.
“The French-Japanese collaboration and the strong
team spirit that was focused
on meeting the big challenges of the 3D 300mm
pilot-line ramp up were very
exciting,” said Fabrice Geiger,
head of Leti’s Silicon Technology Division. “It has been a
rich human and scientific
experience that produced
top-level results.”
World-record solar-cell 44.7% efficiency, made up of four solar subcells based on III-V compound semiconductors for use in concentrator photovoltaics.
Fraunhofer ISE
©
World record for efficient
solar-power conversion
Par
t ne
r’s
per
spe
ctive
In 2013, Soitec and Leti marked another R&D milestone
in their long history of collaboration and innovation.
The four-year Smart Cell project achieved a world record
of 44.7 percent efficiency
at converting sunlight into
electricity using a new solar
cell structure with four solar
subcells. That conversion
rate is a major competitive
breakthrough in the photovoltaic industry and a big
step toward achieving Soitec’s goal of 50 percent efficiency.
based multi-junction solar
cells in which different types
of cells are stacked on top of
one another. Each cell type is
designed to convert a certain
range of the solar spectrum,
such as shortwave radiation,
mediumwave radiation and
infrared.
development and integration experience, and epitaxy
technologies and expertise,
the project also leveraged
Leti’s versatile technology
platform for process, integration and characterization,
and its expertise in bonding
and Smart Cut™ technology.
Bringing space
technology
to Earth
When integrated in Soitec’s
Concentrix™ technology, this
new generation of solar cells
will solidify Soitec’s products
as one of the most efficient
means of converting sunlight
to electrical power, which
means a lower cost per watt
for end users. This technology uses optimized III-V-
This technology, which was
originally developed to power
spacecraft, is especially effective in solar power plants
in sun-rich regions with a
high percentage of direct
radiation. Soitec has CPV
installations in 18 different
countries.
Building on Soitec’s product-
Fraunhaufer ISE developed
epitaxy technology and characterization thanks to its
20 years of expertise in
those fields, and Helmholtz
Center Berlin contributed by
developing some subcells
epitaxy.
the roadmap towards higher
solar-cell efficiencies,” said
André-Jacques AubertonHervé, Soitec’s chairman and
CEO.
This achievement also underscores the continuing benefits Soitec obtains through
its successful collaborations
with Leti.
“This world record confirms
the great potential of our
four-junction solar-cell
design and dramatically
supports acceleration of
13
Leti Activity Report > 2013
Enabling technologies
and devices
Highlights
José-Luis GONZALEZ-JIMENEZ & Yvain THONNART
[email protected] & [email protected]
By François Luc, president, III-V Lab
[email protected] & [email protected] / www.3-5lab.fr/
Laurent Fulbert / [email protected]
Enabling technologies
and devices
3D-stacked die with RF copper-pillar assembly.
CEA-Leti / Olivier Castany, DOPT/STM/LPA
©
Integration of an electro-optical transceiver includinq 8Gb/s/wavelength modulation,
decoding, thermal tuning and f low-control, along with a computing die on an
optical interposer providing wavelength division multiplexing using resonant
modulators.
CEA-Leti / Yvain Thonnart, DACLE/LISAN
©
Automatic testing of a silicon photonics wafer.
CEA/Thales/Alcatel-Lucent
©
Hubeo+ project demonstrates
optical network-in-package
III-V/silicon photonics lasers
for superfast telecom networks
Increased communication bandwidth made possible by silicon photonics allows a denser integration of process-ors and memories, while maintaining a tight energy budget. This is good news for
major semiconductor manufacturers that want to leverage optical functions to increase the integration
and computing capabilities of current multiprocessor devices.
The integration of III-V material with silicon is a breakthrough that will bring new
functions to silicon – functions that can only be delivered by III-V semiconductors – at a
much lower cost compared to III-V materials. A typical example is silicon photonics, in
which lasers are manufactured using III-V material as active material and silicon as a
waveguide.
III-V Lab is focusing on this
most effective and economical way to create a new
generation of very high-rate
optical communication links
that the telecommunications industry needs. The
lab, jointly owned by Thales,
Alcatel-Lucent and CEA, is
one of the main players in
Europe for III-V materials R&D.
Leti brings its world-leading
expertise and experience in
the field of silicon photonics
and molecular bonding to the
partnership.
Key achievements of this
collaboration include the
world’s first demonstration
of an integrated tunable
transmitter on silicon incorporating a hybrid III-V/Si laser
14
fabricated by direct bonding,
and a silicon Mach-Zehnder
modulator with high extinction ratio. These results
clearly position the lab
among the top world players
in silicon photonics R&D.
100Gb/s data
transmission rates
Typical applications for this
technology range from longhaul telecommunications
to shorter links for data
centers, all at the highest
possible data transmission
rates: 100Gb/s or higher.
In 2013, we manufactured
the first tunable continuous
indium-phosphide (InP) laser
on Si with system-grade specification that could be used
within a telecommunication
system. This sets the stage
for one of our key objectives
in 2014: to increase the power
of Si photonics-based lasers
and demonstrate their reliability.
III-V Lab aims to support
and secure the supply chain
of strategic electronic or
electro-optic components
that give Thales and AlcatelLucent a strong differentiator and competitive advantage at system level. The
combined skills and knowhow of the lab’s partners are
key to achieving those goals.
Par
t ne
r’s
per
spe
ctive
The primary uses for these
devices are data centers
and high-performance computers, because they provide
improved computing power
on the same footprint without increasing energy use.
Secondary applications
include desktop computers
requiring very high computing power for graphics and
gaming.
Building on previous Leti
success at realizing photonics devices for high-speed
communications using
silicon-compatible technology, the Hubeo+ Carnot
project at Leti is building a
demonstrator for an optical
network-in-package to interconnect microprocessors
and memories integrated in a
silicon interposer.
a broad range
of expertise
In 2013, the team from three
Leti departments completed the system architecture and preliminary tests of
the 3D packaging technology
required to combine optics
and electronics on the same
device.
The project requires the use
of highly advanced and sometimes unique design, fabrication, and test platforms available at Leti. Design tools that
allow complex modeling of
high-frequency interconnection structures, and multiphysics combining electronics
and photonics are necessary
to integrate the basic building
blocks into a formal circuitlevel and system-level design
environment. Fabricating the
optical components and the
3D assembly of electronics
and optics on the interposer
requires specialized platforms
that combine standard CMOS
processing steps with dedicated process developments
for the optical components.
Finally, measuring the basic
building blocks and the complete system requires highly
advanced electro-optical
test benches.
“Realizing feasible and economically viable optical links
in the packages requires a
broad range of expertise, and
the Hubeo+ project is a very
good example of how Leti
combines research activities
underway in various departments to achieve big results
for our partners and for industry,” said Yvain Thonnart,
Hubeo+ project leader.
15
Leti Activity Report > 2013
Enabling technologies
and devices
Highlights
Dominique NOGUET
[email protected]
By Patrick Le Stanc, department manager, integrity management, Technip
[email protected] / www.technip.com
Nathalie Saguin / [email protected]
T-FleX FBMC transceiver for TVWS in presence of DVB-T
adjacent transmission.
CEA-Leti
©
Technip
©
T-FleX f lexible digital prototyping board.
CEA-Leti
©
QoSMOS project
advances technology
for exploiting TV
white space
TVWS utilization relies on
dynamic spectrum access
(DSA), where systems have to
assess channel vacancy before they can use it. Currently,
this is managed through a
geo-location database that
maps allowed transmit powers
at any location.
In 2010, Leti and 14 partners
in the European FP7 QoSMOS project set out to develop a flexible radio to enable
DSA. In 2013, the team developed the TVWS FleXible radio
(T-FleX), a programmable board,
similar to software-defined
radio, to test radio systems in
the UHF and other bands.
16
Enabling technologies
and devices
In the project Leti also developed a specific TVWS air interface, based on filter bank
multi carrier (FBMC), which is
very well suited to DSA and
prevents radio interference
on adjacent channels.
Allocate frequencies
in real time
With the T-Flex radio, Leti
demonstrated that FBMC
could be used to dynamically
allocate spectrum fragments
in real time, and thus enable
better spectrum usage than
classic radio systems.
The switch to digital technology
by TV broadcast systems has freed spectrum in the UHF bands in some countries.
In the U.S., the freed spectrum, known as
TV white space (TVWS), can be exploited
by opportunistic unlicensed systems to
provide broadband communications, as
long as they do not create harmful interference with TV services.
In practice, this means that devices operating in the TVWS must guarantee low
power leakage in adjacent channels. The
U.S. FCC prescribes that this leakage must
be at most 55dB under the TVWS transmitted power.
Moreover, Leti observed with
FBMC that the error-free level
of an adjacent Digital Video
Broadcasting — Terrestrial
(DVB-T) video broadcast was
reached with a 9dB transmit
power margin, compared to
orthogonal frequency-division multiplexing (OFDM).
This means that FBMC can
be used either to significantly reduce interference
for the same transmitted
power or that coverage can
be increased for a given interference level. In addition,
QoSMOS demonstrated the
low adjacent leakage levels
prescribed by the U.S. FCC.
Par
t ne
r’s
per
spe
ctive
A next-generation smart pipe
for the energy industry
The ability to monitor underwater oil and gas pipelines’ condition and response to
events is a critical issue facing pipe manufacturers and global energy producers.
Technip, a world leader in
engineering and construction for the energy industry,
launched the Morphopipe
project with Leti in 2011 to
develop an integrated solution that allows continuous
monitoring of the dynamic
response and condition of
subsea flexible pipelines.
Focusing primarily on ways
to detect 3D curvature and
twisting of pipes, the system
will be integrated in Technip’s
future flexible pipes that are
targeting new markets in the
offshore industry. Key features of this new technology
include the ability to detect
one-time extreme events as
well as monitor pipe fatigue
over time. These capabilities
will both improve safety and
potentially extend the service life of pipelines.
Technip chose Leti for this
R&D project because of Leti’s
ability to develop a specific
curvature algorithm based
on the appropriate and
best-in-class MEMs technology to meet stringent
application requirements
for flexible pipe. Combining
that expertise with Technip’s
manufacturing experience
and extensive knowledge of
pipe design and behaviour,
the project team in 2013
tailored the algorithm for
Technip’s needs and extensively tested a prototype
monitoring system. The
prototype system has been
delivered to Technip for fullscale testing. The project
also defined a concept for
integrating the system into
our new flexible pipe during
manufacturing.
‘A big differentiator’
This project’s success stems
from Leti and Technip’s
ability to apply leadingedge electronics and highly
advanced mathematics for
flexible-pipes monitoring.
The partnership also has
given Leti the opportunity
to participate in full-scale
testing of flexible pipe behaviour in representative
conditions.
Technip’s ultimate goal is to
provide our clients a smart,
dynamic flexible pipe that is
suitable for most platform
configurations. The monitoring capabilities that this
solution offers do not exist
today, so integrating this
system in our pipe has the
potential to be a big differentiator for Technip.
17
Leti Activity Report > 2013
Enabling technologies
and devices
Highlights
Claude VAUCHIER
[email protected]
Enabling technologies
and devices
Olivier WEBER
[email protected] & [email protected]
www.st.com/web/en/about_st/fd-soi.html
Cross section TEM picture of a 14nm technology
node FD-SOI MOS transistor.
CEA-Leti
©
First generation of video-rate lensfree-imaging prototype.
CEA-Leti
©
New lensfree-imaging
technique offers microscopy
breakthrough
Developed by Leti in 2009, lensfree imaging provides a unique opportunity for companies to
implement a technological breakthrough in optical imaging.
The technique provides
multi-scale observation capability across two orders
o f m a g n i t u d e , a l l o w i n g
researchers to differentiate
between tissues and cells,
and bacteria and viruses.
It opens a range of applications in pharmacology and
biotechnology, including drug
screening and bioprocess
monitoring, as well as portable diagnostics and air and
water monitoring. Moreover,
the lensfree optical imaging
system is much smaller than
standard microscopes, and
less expensive because it
is made of low-cost components.
The technique generates
holographic images of microparticles, cells, viruses, or
bacteria by employing a light-
18
emitting diode to illuminate
objects, and a CMOS digital
sensor array to capture their
image. Images are analyzed
by computer, so results are
available instantaneously.
The process has an extremely
large field of view (24mm2),
allowing simultaneous observation of thousands of organisms.
Transfer to industry
Leti has developed one of the
world’s more advanced labs in
lensfree-imaging technology.
In keeping with its mission
of creating innovation and
transferring it to industry,
Leti in 2013 achieved the first
industrial valorization of the
technique with the French
startup IPRASENSE for pro-
cess control of cell cultures
applied to bio-production.
Leti’s in-vitro diagnostics
spinout Avalun also will use
the technique.
“Lensfree imaging has proven to be a major innovation
in the field of microscopy,
and it helps position Leti
as a technological leader
in instrumentation for biology, chemistry, and environment monitoring,” said
Claude Vauchier, lab-on-chip
program manager for biology
and chemistry. “In addition,
we have the opportunity
to develop new tools and
instrumentation for other
applications using the
lensfree building blocks.”
Demonstrating
FD-SOI’s advantages
at the 14nm technology node
Fully Depleted Silicon-on-Insulator (FD-SOI) is a differentiating technology: cheaper than bulk FinFET and simpler to manufacture, while providing excellent
performance and superior energy efficiency.
For the past two years, STMicroelectronics, IBM, and
Leti have been working on
a FD-SOI project to develop a 14nm-node technology platform for high-speed
and energy-efficient CMOS
products for mobile, multimedia, gaming, and networking applications.
ST, which has been a global
leader in adopting FD-SOI for
its core CMOS technology,
is leading the joint development project.
In 2013, the team demonstrated the competitiveness of
FD-SOI technology at 14nm
compared to 28nm bulk and
FD-SOI, and to 22nm and
16nm bulk FinFET technologies. The project achieved
full flow-process construc-
tion and development, and
the definition of the device
offer for the platform, making
this the only FD-SOI technology in the world at this advanced node.
N e w p ro c e s s e l e m e n t s
compared to the 28nm FDSOI technology developed
in this
project include a
strained-SiGe channel and
dual source-drain SiC:P and
SiGe:B in-situ doped epitaxies for performance boost.
In addition, this technology
features 84nm contacted
poly-pitch, new contact interconnect constructs, and
64nm metal 1 pitch, providing
0.55x area scaling over the
28nm technology.
A familiar path
The current project, which
builds on more than 15
years of advanced research
on FD-SOI by Leti, ST, and
IBM, involves more than 100
people, mostly at ST’s facility in Crolles, France, where
the platform is being implemented. The path is familiar:
ST started a 28nm production process at the Crolles
manufacturing site in 2012.
Leti has committed more
than 20 full-time specialists
to the project, as assignees
in ST-Crolles, or contributing from Grenoble, or from
Albany, N.Y., in the frame of
the ST-IBM-Leti Joint Development Agreement (JDA)
established in 2007.
19
Leti Activity Report > 2013
Enabling technologies
and devices
Highlights
Patrice REY
[email protected]
By Jean-Marie André, BeSpoon CEO
[email protected] / www.bespoon.com
Laurent Ouvry / [email protected]
SEM photograph
of the nanogauge
in an accelerometer.
CEA-Leti
©
6-axis structure fabricated by Tronics including 3 accelerometers and 3 gyrometers.
With a size 1.6 x 2.5mm², is one of the smallest in the industry.
Leti M&NEMS technology drives
cheaper, smaller, low-power
MEMS sensors for smartphones
The explosive growth in consumer demand for versatile devices with functional and creative features has been
a boon to the MEMS industry. More than a billion smartphones are manufactured annually and each can contain more
than 10 MEMS for movement detection, and in the near future for augmented reality and pedestrian navigation.
Tronics, a 1997 Leti spinoff, is an international full–
service MEMS manufacturer
offering an extensive portfolio of MEMS processes. It has
helped multiple clients serve
the growing global demand
for sophisticated devices.
consequently to significant
price reduction. Besides its
size advantage, the piezoresistive nanowire-based
technology significantly decreases power consumption
without sacrificing performance.
To expand its offer for the
promising global consumer
market, Tronics and Leti
started the ULTIMES project in 2012. The goal was
to transfer to Tronics Leti’s
new technology based on the
M&NEMS concept that combines on one device a thick
MEMS layer for the inertial
mass, with a thin and narrow NEMS part as suspended
strain piezoresistive gauge.
This concept involves amplification effects that lead to
much smaller devices than
current state of the art, and
Towards a universal
technological
platform
The M&NEMS technology
allows the manufacture
through traditional methods
of all sensor types required in
a smartphone (accelerometers, magnetometers, gyrometers, pressure sensors,
and microphones) on a single
silicon chip using a common process flow (M&NEMS
platform), leading to a high
degree of integration.
Less than two years after
the beginning of the project,
Tronics announced that it
successfully designed and
manufactured the first batch
of 6DOF (6 degrees of freedom) MEMS chips, with three
accelerometers and three
gyroscopes on a single die.
With a die size of less than
4mm2, this 6DOF MEMS chip
is one of the smallest in the
industry.
As Pascal Langlois, CEO of
Tronics Group, said: “This is
a major step in the execution of our strategy to offer
innovative technologies for
consumer products with the
intent to give IDMs and OEMs
access to state-of-the-art
inertial solutions in terms
of process technology, size,
power consumption and performance.”
Par
t ne
r’s
per
spe
ctive
SpoonPhone and its tag.
CEA-Leti
©
20
Enabling technologies
and devices
BeSpoon
©
A very precise location system
for smartphones and wearables
The story behind the launch of BeSpoon began with the PinPointer project at Leti in 2009. The team set out to
develop a new, more accurate way to locate objects and people indoors using handheld devices. Leti was one of only
four labs in the world to have demonstrated a full-silicon proof-of-concept for IR-UWB (impulse radio-ultrawide band).
BeSpoon brought its system knowhow and thorough understanding of smartphone architecture.
IR-UWB is recognized as an
ideal technology for indoor
applications, both in terms
of accuracy and robustness.
Targeting smartphones and
wearable devices, we integrated this technology on
a full-blown IR-UWB CMOSintegrated transceiver that
is able to measure distance
– within a few centimeters
– based on the time it takes
the radio signal to travel,
rather than signal strength.
Unlike current solutions, our
location technology also is
extremely reliable. Walls,
people or distance do not
affect its accuracy.
World record
BeSpoon launched in 2010
and the BeSpoon and Leti
collaboration continued.
In 2013, we established
a world record of operation range in IR-UWB. This
was a particularly meaningful event, as this radio
technology is tightly regulated. Its output power is
limited to -41.3dB/Mhz. We
demonstrated that this
limitation was not a showstopper for us.
Designed for straightforward
integration within smartphones and set-top boxes,
our chip will bring new use
cases to smartphones and
offer new services across
wearables. It will also drastically increase the efficiency
and decrease the cost of
real-time location systems.
In particular, it will allow
far more precise location
information than the beaconbased local positioning systems used in today’s smartphones.
BeSpoon’s continuing work
with Leti in 2013 also led to the
introduction of SpoonPhone in
early 2014. SpoonPhone is an
Android smartphone containing the latest generation of
our chip. Using special tags
users place on their valuables
and easy-to-misplace objects, the phone will put an
end to those frantic searches
that are the bane of our daily
lives. SpoonPhone also is a
powerful development kit to
prototype new applications
l e v e ra g i n g i t s p r e c i s e
d i s t a n c e - m e a s u re m e n t
capabilities.
21
Leti Activity Report > 2013
Highlights
Applications
By Geoffrey Esteban, CEO, Iprasense
Claude Vauchier / [email protected]
Health
Building smart instruments
using lensfree imaging
Leti and Iprasense started the Quantacell project to conduct research and development on cell-monitoring techniques and instrument prototypes based on lensfree imaging. The lensfree technique, developed by Leti in 2009, generates holographic images of
micro-particles, cells, viruses, or bacteria by employing a light-emitting diode to illuminate
objects, and a CMOS digital sensor array to capture their images. This is a non-invasive technique, meaning no sensors come in contact with the cells media.
Par
t ne
r’s
per
spe
ctive
2
Applications
Cell culture monitoring in petri dish with 4 lensfree video microscopes in incubator.
CEA-Leti
©
Launched in 2013, Iprasense is targeting applications for monitoring, counting, and characterizing cells cultivated in incubators and bioreactors as part of the bioproduction process.
Bioproduction is used in the fields of biopharmaceuticals, cell therapy, food manufacturing,
cosmetics, and biofuels, as well as in bioindustries that produce enzymes, flavors, organic acids, antibiotics, vitamins, or organic polymers.
of the cell culture, but also will instantly analyze
the live recording to give researchers real-time
information on cell numbers and confluence, or
how well the cells have generated an even layer
across a cell-culture flask.
The lensfree-imaging technology is ideal for
daily use in laboratories. It is faster than traditional techniques, because cell imaging is
done in real time, and it improves both process
control and the quality of cell production.
Real-time information
The common lab we have setup with Leti corresponds to one of the best research-and-innovation structures for our company size. It gives us
access to high-level skilled personnel and, more
important, to a very wide range of competencies.
Our first product will be a next-generation,
smart instrument for cell culture monitoring in
a flask, a petri dish, or a microtiter plate, in bioreactors. It will not only capture every moment
22
CEA/Leti
©
23
Leti Activity Report > 2013
Highlights
Applications
By Jens-Peter Schlomka, manager – systems engineering, Morpho Detection
www.morpho.com/detection
Security
Christine HENNEBERT
[email protected]
Security / transmission
Francis Glasser / [email protected]
Answering
the EU’s call for
an explosive-detection
system
Spain’s smart city
and living lab
In the EU’s quest to create smart cities, the North Atlantic coastal town of Santander,
Spain, has become a living laboratory for designing, creating and testing the infrastructure,
applications and services that will make cities more efficient and improve people’s lives.
Morpho Detection is a leading supplier of threat-detection systems for explosives, narcotics and CBRNe. Its customers
include government, military, air-andground transportation, first-responder,
critical-infrastructure and other publicsafety organizations.
Devices are deployed in the city, along avenues,
in the parks, on the front of houses, and form an
infrastructure that allows executing both
experimentation and user-addressed services.
University of Cantabria
Applications
©
Morpho Detection’s solutions that integrate
advanced technologies, including X-ray diffraction (XRD), are already used in daily operation
for screening passenger checked baggage for
explosive threats. XRD is one promising technology able to meet EU criteria for a so-called
“Type D” solution — capable of detecting liquid
explosives in passenger carry-on bags.
CEA-Leti / G. Cottet
©
Morpho Detection, which is part of Morpho,
Safran Group’s security unit, has worked with
Leti since 2010 to meet an EU deadline to deploy
the “Type D” solution at airports for screening
passenger carry-ons.
Technology transfer
The result of that effort is XDi™, a liquidexplosives detection solution developed by
Morpho Detection. It includes photon-counting
X-ray detectors developed in this collaboration,
as well as ASICS and spectroscopic applications
for high-energy resolution. The team met the
deadline for first detector prototypes in 2013,
and transferred this technology to Morpho
Detection to enable future deployment of XDi at
airports.
In addition to increasing safety, the unique
solution delivers low false alarm rates, reduces
the need for hand searches, and could potentially lead to shorter passenger waiting times.
24
The SmartSantander project is building an experimental test-bed infrastructure at the scale of
a city for R&D on Internet of Things architecture, and development of new and innovative
services and applications based on key enabling
IoT technologies.
Par
t ne
r’s
per
spe
ctive
A network of 12,000 sensors and actuators
connected wirelessly to the IoT and a city
control facility will improve basic municipal services like traffic management, park maintenance, and environmental monitoring. Because
smart cities require the active participation of
people, the project also relies on “participatory
sensing,” in which citizens use smartphones to
share in real time what they see and experience,
and “augmented reality,” such as computermerged information sensed in the physical environment, displayed on a map of the city, for
instance, and accessed with smart devices.
‘Pulse of the City’
In 2013, the project released two innovative
applications for smartphones. One provides
information about tourism, and the scheduling
of cultural events. It also provides locations of
free parking spaces. A “pulse of the city” app
is a participatory sensing experiment, in which
citizens inform the city’s public agencies about
accidents or problems.
CEA-List and CEA-Leti were in charge of securing access to the SmartSantander infrastructure and communications over a wireless
sensor network. This included ensuring the security of the transactions and protecting users’
privacy.
Dr. Laurent Hérault, a Leti vice president and
one of the founders of the project, said it will
make Santander one of Europe’s first smart
cities, as well as provide valuable experience
and knowhow that will be used in other cities.
“As SmartSantander begins to bring tangible
benefits to residents in the coming months, it also
will serve as a laboratory for researchers working
on future technologies for the IoT,” he said.
The project’s 15 partners include universities,
research institutes and industrials. The 8.7 million-euro project has received about 6 million
euros from the European Union.
25
Leti Activity Report > 2013
Highlights
Applications
Applications
By Jean-François Delepau, managing director, ULIS
[email protected] / www.ulis-ir.com/
François Simoens / [email protected]
Laurent Alacoque
[email protected]
Automation
Revolutionary pixel-level
packaging for infrared sensors
Extending SEEL and EnLight
success in IR detection system
The infrared market continuously challenges IR sensor makers to provide
devices that perform better at significantly lower cost. ULIS and Leti’s Pixel Level Packaging project are transforming the way future IR imaging sensors will be made, bringing new
advantages in size, cost, and robustness.
Standard low-cost motion detectors are unreliable for immobile objects
because they typically “forget” the presence of something that has stopped moving.
In addition, they are unable to provide a
“map of presence”, or locations of people in
a room. On the other hand, systems based
on visible cameras cannot locate people in
the dark.
To provide a cheap, low-power detection device
that is free of these limitations, Leti is developing a system based on an infrared camera
with dedicated algorithms that allow autonomous detection of people even in the dark with
reduced computing power. Extending the uses
for an integrated circuit developed in the SEEL
(See Awards, page 34) and EnLight programs,
researchers believe they have produced the
first embedded infrared presence localizationand-tracking system.
The system uses the Internet protocol and
Android application to transmit real-time thermal video or just “presence descriptors”, i.e.
specific information about people in a room.
In the early stages, an Ethernet port has been
used for Internet connection, but as the system
evolves, a Bluetooth or ZigBee communication
link will be used.
Par t
ner’s
persp
ective
Home automation, building
and security applications
Micro80 PLP sensor mounted and wire-bonded in a ceramic chip carrier.
courtesy of ULIS
©
ULIS, a leading provider of high-quality thermal
infrared image sensors that enable makers of
consumer electronics and IR equipment to produce low-weight, low-power and cost-effective
thermal cameras in large volumes, expects the
project to provide competitive advantages in
terms of sensor cost, time to market and
patent protection.
Leveraging new technologies developed in previous EU projects, we started the PLP project
with Leti in 2011 to develop a process flow for
vacuum thin-film encapsulation of 34-micron
pixel pitch for sensors targeting the homeautomation market, a new application for ULIS.
First demonstration in 2013
Major breakthroughs in the development of
this revolutionary PLP technology in 2013 were
the improvement in material adhesion at both
capsule substrate and capsule anti-reflection
coating interfaces. This led to a stable vacuum
26
Automation
in the capsules and the first demonstration of
this technology.
These steps also helped our team anticipate
two aspects of the PLP technology transfer to
ULIS. The first is the creation of specifications
to purchase an industrial-sealing tool needed
to qualify a high-capacity PLP machine that is
typically used in the optical industry. The second
aspect of the transfer is introducing the current
bolometers in Leti’s 200mm manufacturing line
using ULIS bolometers. This expands research of
an earlier EU project, MIRTIC, that produced a
new type of affordable infrared 2D array.
This second step required us to redesign our
bolometers, taking into consideration PLP
constraints, and validate the process flow using
the 200mm line. In 2014, the team will focus on
ensuring the long-term stability of the vacuum
in the capsules to improve the life expectancy
of the product, and making further progress in
the PLP technology transfer.
Even in its early stages, the “lab object” is
sophisticated. It can broadcast presence descriptors globally on the Internet, and can be
reprogrammed from anywhere using a firmware
upgrade protocol.
Android application: Real-time display of the presence in the
room (two people detected and localized). This is directly sent
by our system. The Android application only displays it.
CEA-Leti
©
Close-ups of the SEEL and ENLIGHT circuits on a wafer (see
anual report Leti 2012; p. 34). They are aligned in a column, the
almost uniform blobs columns; are another circuit. Illustration on
the right is one of the chips on the left, packaged by ULIS.
CEA-Leti
©
Leti’s SEEL and EnLight task force will continue
to improve the system’s marketability, primarily
for home-automation, building and surveillanceand-safety applications, by reducing the size
to 4x4cm² and lowering power consumption for
battery operation.
In addition to applying earlier successes to new
applications, the development of the system
highlights the value of Leti’s interdepartmental
collaboration. “This would have been impossible without our across-the-board contributions,” noted Laurent Alacoque, Leti IC designer.
“To get here, we have drawn from infrared bolometer technology, integrated circuits design,
optics-for-infrared knowhow, analog and digital board design, embedded software programming, Internet protocol programming, and
Android application design.”
27
Leti Activity Report > 2013
Highlights
Applications
edith beigne & Alexandre valentian
[email protected] & [email protected]
Power-efficient computing
Superfast FD-SOI
ultrawide-voltage-range DSP
By Isabelle Fratter, CNES Toulouse, ASM/Swarm project manager
[email protected] / www.cnes.fr
Jean-Michel Leger / [email protected]
A Swarm of data about
Earth’s magnetic field
When the European Space Agency
(ESA) launched the Swarm mission in November, it set the stage for scientists to get
unprecedented data about Earth’s magnetic
field, and marked another major achievement in the fruitful collaboration between
CNES and Leti to advance magnetometer
technology.
Applications
Leti and STMicroelectronics launched the Frisbee project in 2012 to design and
develop an extremely energy efficient circuit using UTBB FD-SOI technology. The goal was to design
a circuit for 28nm with a maximum operating frequency greater than 2.5 GHz, while operating at
supply voltages as low as 350mV.
At 0.4V, the DSP exhibits 10x state-of-the-art operating frequency.
In 2013, the project demonstrated a 32-bit digital signal processor, using ST’s breakthrough
ultra-thin-body and box (UTBB) FD-SOI 28nm
process technology. It allows body-bias voltage
scaling from 0V to ±2V, decreases minimum
circuit operating voltage and supports clockfrequency operation between 480MHz at 400mV
and 2.6GHz at 1.3V. At 0.4V, the DSP exhibits 10x
state-of-the-art operating frequency, and a
minimum energy point of 62pJ.
The demonstration DSP highlights FD-SOI’s high
suitability for better portable and batterypowered products with more energy efficient
integrated circuits at future technology nodes.
This DSP is designed with embedded maximum
frequency tracking and other design techniques
provided by Leti’s Architecture, IP Design and
Embedded Software Department (DACLE). This
DSP shows how UTBB FD-SOI bridges the gap
between bulk technology reaching its limits and
new technologies at the 10nm node and below
requiring expensive equipment for double-patterning or EUV lithography.
28
Swarm mission.
CEA-Leti
©
ESA/illustration Pierre CARRIL
©
Targeted at mobile, Internet of Things and
microserver applications, the DSP’s benefits
include performance modulation in a wide range
of operating points from low-power applications
to very high-speed apps.
In February 2014, the Leti and ST team presented its results at ISSCC 2014, the International Solid-State Circuits Conference in San
Francisco, Calif., one of the most important circuit design events for industry and researchers.
The paper, entitled “A 460MHz at 397mV, 2.6GHz
at 1.3V, 32b VLIW DSP, Embedding Fmax Tracking,”
received widespread praise from conference
attendees. At the gathering, the team also
showed a demonstration kit, which is now displayed in Leti’s showroom.
“This demonstration DSP shows that FD-SOI is
blazing the trail for better portable and batterypowered products, using more efficient semiconductor chips, all the way down to the
10nm node,” said Philippe Magarshack, ST’s
executive vice president for design enablement
and services.
Space
The foundation was built in the 1990s, when
CNES commissioned Leti to build nuclear magnetic resonance (NMR) magnetometers for the
1999 Ørsted space mission, which was followed
by CHAMP in 2000. In 2005, we started the
Absolute Scalar Magnetometer (ASM) Project
whose main objective was to develop a newgeneration instrument for Swarm that would
provide the highest precision, resolution, and
absolute accuracy ever attained by a magnetometer in space.
The four-year Swarm mission will gather data
that for the first time will make it possible to
distinguish between the various sources of the
magnetic field: the Earth’s core, mantle, crust,
and oceans, as well as the ionosphere and magnetosphere. These measurements will improve
scientists’ understanding of the Earth’s magnetic-field structure, evolution and interaction
with the solar wind.
Par
t ne
r’s
per
spe
ctive
ASM instrument delivered by Leti.
CEA-Leti / G. Cottet
©
France’s leadership in scalar
magnetometry from space
The magnetometers will collect simultaneous
measurements of the magnetic field from the
satellites’ orbiting positions 462 and 510 kilometers above Earth. For Leti, the November launch
was followed by a four-month ASM in-flight commissioning phase, and on-going calibration of the
instruments and validation of the products.
CNES, which is responsible for shaping and implementing France’s space policy in Europe, commissioned Leti to produce the ASMs. It also worked
closely with Leti throughout their development,
primarily to guarantee high-quality manufacturing processes, ensure that performance could be
reproduced on the different flight models, and
verify the aptitude of the many innovative technologies in these instruments to resist conditions in space for the mission lifetime.
The unequalled performance of these new
instruments reinforces France’s leadership in
scalar magnetometry from space.
29
Leti Activity Report > 2013
Highlights
Applications
By Alessandro Mapelli, microsystems engineering, CERN
[email protected] / http://ph-dep-dt.web.cern.ch/
Jean-François Teissier / [email protected]
Physics
Cooling in the CERN Large
Hadron Collider with silicon
microf luidic devices
Par
t ne
r’s
per
spe
ctive
the
Applications
The Engineering Office of the Detector Technologies Group (PH-DT) in
CERN Physics Department in Geneva is investigating micro-technologies. This effort aims at
developing novel types of detectors and implementing alternative approaches to on-detector
services, such as cooling, and benefitting from standard micro-fabrication techniques.
(a)
IR images of bonded 8’’ silicon wafers with embedded microchannels for the LHCb Velo detectors at CERN. (a) Hydrophilic Direct
Bonding and (b) Hydrophobic Direct Bonding.
CEA-Leti
©
Planning for a major upgrade of the LHCb experiment in 2018, CERN invited Leti and other institutes to submit offers to supply silicon microfluidic devices used as demonstrators for
cooling the LHCb Vertex Locator (Velo) detectors
in CERN’s Large Hadron Collider (LHC).
The project objective was to demonstrate for the
first time in the field of high-energy physics (HEP)
the possibility of using silicon microfluidic devices
for thermal management of silicon pixel detectors
and their read-out electronics in LHC experiments.
Exceeding expectations
After Leti was selected to supply the microfluidic devices, CERN provided an initial fabrication process-flow based on which experts in Leti’s
Silicon Specialty Solutions (Leti-3S) program implemented their own flow with their expertise in
silicon processing, strictly following our technical
specifications for the deliverables (which worked
beyond expectations).
30
(b)
In 2013, Leti’s microfluidic devices demonstrated
the feasibility of an active silicon on-detector
cooling system for the upgrade of the Velo detectors. The detectors are cooled with evaporative
CO2, which requires the microchannels to hold
internal pressures in the order of 150 bars. The Leti
devices were successfully tested up to 700 bars
with no failure.
In 2014, Leti will provide silicon devices for ondetector thermal management in other HEP experiments at CERN. These devices are similar to
those provided for the demonstration, but with a
much more complex configuration and fabrication
flow at Leti.
The Leti-3S team has consistently provided microfluidic devices of outstanding quality, as well as
a great working atmosphere. The transparency of
their operations is of utmost importance for me as
the contact between micro-fabrication foundries
and CERN’s international collaborations.
©
eti
-L
CEA
31
Leti Activity Report > 2013
Awards
health
sentation
Outstanding pre
on bio-sen sing
and bioMérieux
ole Centrale de Lyon
Ec
ti,
Le
m
fro
ers
the 3rd InternaA team of research
Oral Presentation at
ing
nd
ta
ts
Ou
for
s, Spain. They prereceived an award
Technology in Sitge
g
sin
en
-S
Bio
on
ferent bacterial
tional Conference
of discriminating dif
y
lit
ibi
ss
po
e
th
agar media, using
sented results on
e on thin layers of
ag
st
h
wt
gro
rly
ea
rre R. Marcoux and
species at a very
ing algorithms. Pie
rn
lea
d
an
g
rin
te
light forward-scat
ers.
the Leti team memb
Mathieu Dupoy were
tional Bu
rly OSEO, in the Na
by Bpifrance, forme
red
no
ho
ge startups
s
ta
wa
-s
n
rly
Avalu
innovative, ea
es
niz
og
rec
ard
aw
e
attracting
ness Challenge. Th
of succeeding and ®
have a good chance
ns
pla
s
, a nextes
ad
sin
bP
bu
La
e
whos
any develops
mp
co
e
Th
.
rm
te
ort
for e-health
investors in the sh
) device designed
OC
(P
are
f-c
-o
int
po
t blood tests,
generation mobile
n perform differen
ca
ab
nil
mi
ble
rta
po
artups, page 39).
applications. The
cholesterol (See St
or
,
se
co
glu
n,
tio
such as blood coagula
www.avalun.com
ions
telecommunications- telecommunications- telecommunications- telecommunications- telecommulecommunicat
nications- telecommunications- telecommunications- telecommunications- telecommunications-te
telecommunications- telecommunications- telecommunications- telecommunications- telecommunications- telecommunications- telecommunications- telecommunications- telecommunications-telecommunications- telecommunications- telecommunications- telecommunications- telecommunications- telecommunications- telecommunications- telecommunications- telecommunications-tey
lecommunications- telecommunications- telecommunications- telecommunications- telecommuaward for technolog
cil project won an
F@
e
nications- telecommunications- telecommunications- telecommunications- telecommunicationsth
.
in
cy
ers
en
Ag
rtn
h
d its pa
nal Researc
telecommunications- telecommunications- telecommunications- telecommunications- telecommu- Leti an
R, the French Natio
AN
m
fro
e
fer
th
ns
tra
red
d
no
nications- telecommunications- telecommunications- telecommunications- telecommunications-te- valorization an
2013, ho
or ANR Digital Prize
lecommunications- telecommunications- telecommunications- telecommunications- telecommuniR Numerique 2013,
AN
x
ication between
Pri
un
e
mm
Th
co
cations- telecommunications- telecommunications- telecommunications- telecommunications-tebit rate (VHBR)
h
hig
ry
aul
ve
on
rk
lecommunications- telecommunications- telecommunications- telecommunications- telecommu- project’s wo
ts include Jean-P
d readers. Recipien
an
nications- telecommunications- telecommunications- telecommunications- telecommunicationsrds
of
ca
nd
art
era
sm
tless
nçois Vach
Elisabeth Crochon
telecommunications- telecommunications- telecommunications- telecommunicationstelecommu- contac
r of the project, Fra
to
ina
ord
s
co
,
wa
lto
ti
Le
ma
nications- telecommunications- telecommunications- telecommunications- telecommunications-te- Caruana of Ge
th Crochon of
Raisonance. Elisabe
of
lecommunications- telecommunications- telecommunications- telecommunications- telecommunitte
mo
La
is
nc
d Fra
cations- telecommunications- telecommunications- telecommunications- telecommunications-te- Leti, an
lecommunications- telecommunications- telecommunications- telecommunications- telecommu- project manager.
nications- telecommunications- telecommunications- telecommunications- telecommunicationstelecommunications- telecommunications- telecommunications- telecommunications- telecommunications- telecommunications- telecommunications- telecommunications- telecommunications-telecommunications- telecommunications- telecommunications- telecommunications- telecommunications- telecommunications- telecommunications- telecommunications- telecommunications-teed Research from
lecommunications- telecommunications- telecommunications- telecommunications- telecommu3rd Prize for Appli
n
wo
din
Go
lle
nications- telecommunications- telecommunications- telecommunications- telecommunicationship with an SME/
Engineer Christe
research in partners
es
telecommunications- telecommunications- telecommunications- telecommunications- telecommuniz
og
rec
ize
pr
. It was awarded
FIEEC/F2I. The
nications- telecommunications- telecommunications- telecommunications- telecommunications-ted jobs in the region
an
h
wt
gro
e
rat
ne
lecommunications- telecommunications- telecommunications- telecommunications- telecommunis commercialized
ETI that helps ge
n-analysis solution
tio
mo
cations- telecommunications- telecommunications- telecommunications- telecommunications-teto
ion
ut
rib
ss, entertainment,
for Godin’s cont
lecommunications- telecommunications- telecommunications- telecommunications- telecommuare sport and fitne
lds
fie
n
tio
ca
pli
ap
nications- telecommunications- telecommunications- telecommunications- telecommunicationsby Movea. The
telecommunications- telecommunications- telecommunications- telecommunications- telecommutablets.
smartphones, and
nications- telecommunications- telecommunications- telecommunications- telecommunications-teChristelle
GODIN
lecommunications- telecommunications- telecommunications- telecommunications- telecommunications- telecommunications- telecommunications- telecommunications- telecommunications-telecommunications- telecommunications- telecommunications- telecommunications- telecommu®
nications- telecommunications- telecommunications- telecommunications- telecommunicationstelecommunications- telecommunications- telecommunications- telecommunications- telecommuenables
®
Thread yarn, which
nications- telecommunications- telecommunications- telecommunications- telecommunications-tedevelopment of Ee
th
tools.
for
s
ion
ard
ct
du
aw
pro
lecommunications- telecommunications- telecommunications- telecommunications- telecommunitwo major
ing standard
ers were honored by
plastic industries us
d
an
d to
cations- telecommunications- telecommunications- telecommunicationshe
tile
nc
Leti researchtelecommunications-tetex
e
lau
th
y
an
by
1D, the comp
ctions in products
lecommunications- telecommunications- telecommunications- telecommunicationstelecommu€400,000 to Primo
® co-inventor
ing electronic fun
of
dd
be
ard
em
aw
nt
d
me
nications- telecommunications- telecommunications- telecommunications- telecommunicationsd E-Threa
technology develop
Arène and CTO an
ze in
ance awarded a telecommutelecommunications- telecommunications- telecommunicationstelecommunicationsBpifr
its CEO Emmanuel
th
wi
ng
antex Innovation Pri
alo
Av
y,
e
th
log
ed by
nications- telecommunications- telecommunications- telecommunicationstelecommunications-tethe techno
ialize
® yarn also was recogniz
erc
were
ts
mm
co
ien
cip
d
Re
lecommunications- telecommunications- telecommunications- telecommunications- telecommuniof E-Threa
rt, Germany.
ard. The invention
Symposia in Frankfu
x
na
te
wo
cations- telecommunications- telecommunications- telecommunicationstelecommunications-tean
Av
ard
Dominique Vic
d
Vic
an
il
12,
xt
partment. In 20
ry at the Techte
de
s
go
te
lecommunications- telecommunications- telecommunications- telecommunicationstelecommunic
ca
tro
ls
op
ria
s
te
ti’
Ma
the New
Mourey, head of Le
nications- telecommunications- telecommunications- telecommunicationstelecommunicationsStartups, page 39).
an Brun, and Bruno
launch Primo1D (See
to
l
telecommunications- telecommunications- telecommunicationsard, researcher Jetelecommusa
Victelecommunicationspo
pro
his
OSEO for
nications- telecommunications- telecommunications- telecommunicationsergence Award from
0,000 Emtelecommunications-telecommunications- telecommunications- telecommunications- €4
telecommunications- telecommuniDominique VICARD
cations- telecommunications- telecommunications- telecommunications- telecommunications-telecommunications- telecommunications- telecommunications- telecommunications- telecommuLeti Activity Report > 2013
nications- telecommunications- telecommunications- telecommunications- telecommunications33
telecommunications- telecommunications- telecommunications- telecommunications- telecommunications- telecommunications- telecommunications- telecommunications- telecommunications-te-
cil project
AN R honors F@
ses grow
Helping busines
o awards
tw
y
b
d
re
o
n
o
h
team
E-Thread yarn
32
hyunsuss
©
Awards
Awards
pif rance award
B
s
e
iv
e
c
re
n
lu
a
Av
si-
health- health- health- health- health- health- health- health- health- health- health- health- health- h
health- health- health- health- health- health- health- health- health- health- health- health- health- h
health- health- health- health- health- health- health- health- health- health- health- health- health- h
health- health- health- health- health- health- health- health- health- health- health- health- health- h
health- health- health- health- health- health- health- health- health- health- health- health- health- h
health- health- health- health- health- health- health- health- health- health- health- health- health- h
health- health- health- health- health- health- health- health- health- health- health- health- health- h
health- health- health- health- health- health- health- health- health- health- health- health- health- h
health- health- health- health- health- health- health- health- health- health- health- health- health- h
health- health- health- health- health- health- health- health- health- health- health- health- health- h
health- health- health- health- health- health- health- health- health- health- health- health- health- h
Pierre
Marcoux
health- healthhealth- health- health- health- health- health- health- health- health- health- health- h
health- health- health- health- health- health- health- health- health- health- health- health- health- h
health- health- health- health- health- health- health- health- health- health- health- health- health- h
health- health- health- health- health- health- health- health- health- health- health- health- health- h
health- health- health- health- health- health- health- health- health- health- health- health- health- h
health- health- health- health- health- health- health- health- health- health- health- health- health- h
health- health- health- health- health- health- health- health- health- health- health- health- health- h
health- health- health- health- health- health- health- health- health- health- health- health- health- h
health- health- health- health- health- health- health- health- health- health- health- health- health- h
health- health- health- health- health- health- health- health- health- health- health- health- health- h
health- health- health- health- health- health- health- health- health- health- health- health- health- h
health- health- health- health- health- health- health- health- health- health- health- health- health- h
health- health- health- health- health- health- health- health- health- health- health- health- health- h
health- health- health- health- health- health- health- health- health- health- health- health- health- h
health- health- health- health- health- health- health- health- health- health- health- health- health- h
health- health- health- health- health- health- health- health- health- health- health- health- health- h
health- health- health- health- health- health- health- health- health- health- health- health- health- h
healthAvalunhealthteam health- health- health- health- health- health- health- health- health- health- health- h
health- health- health- health- health- health- health- health- health- health- health- health- health- h
health- health- health- health- health- health- health- health- health- health- health- health- health- h
health- health- health- health- health- health- health- health- health- health- health- health- health- h
health- health- health- health- health- health- health- health- health- health- health- health- health- h
health- health- health- health- health- health- health- health- health- health- health- health- health- h
Awards
OPTICS AND PHOTONICS
er from II-VI
Best Student Pap
mit tee
Work shop Com
an
homas N. Casselm
William E. Spicer-T
e
th
ed
d
an
eiv
rec
ics
the Phys
Clément Lobre
e U.S. Workshop on
th
at
r
pe
Pa
t
n
en
tio
ud
za
ure characteri
Award for Best St
paper, “Microstruct
e
Th
ls.
ria
ste
cro
Ma
mi
VI
the
Chemistry of IIthe investigation of
HgCdTe”, describes
th nitrogen,
wi
ly
ive
ct
of p-type doping in
pe
implanted res
er
lay
l
xia
ita
ep
Te
time the committructure of HgCd
y. This was the first
on
tim
an
d
an
ic
en
to a Ph.D. student
phosphorus, ars
consecutive years
o
tw
for
ard
aw
is
the award in 2012.
tee has given th
ndre Gaucher won
xa
Ale
ry.
to
ora
lab
from the same
-design -design -design -design -design -design -design -design -design -design -design -design
n -design -design -design -design -design -design -design -design -design -design -design -deesign -design -design -design -design -design -design -design -design -design -design -design
n -design -design -design -design -design -design -design -design -design -design -design -deesign -design -design -design -design -design -design -design -design -design -design -design
n -design -design -design -design -design -design -design -design -design -design -design -deesign -design -design -design -design -design -design -design -design -design -design -design
n -design -design -design -design -design -design -design -design -design -design -design -deesign -design -design -design -design -design -design -design -design -design -design -design
n -design -design -design -design -design -design -design -design -design -design -design -deesign -design -design -design -design -design -design -design -design -design -design -design
n -design -design -design -design -design -design -design -design -design -design -design -deesign -design -design -design -design -design -design -design -design
-design
-design -design
Lionel
VINCENT
n -design -design -design -design -design -design -design -design -design -design -design -deesign -design -design -design -design -design -design -design -design -design -design -design
n -design -design -design -design -design -design -design -design -design -design -design -deesign -design -design -design -design -design -design -design -design -design -design -design
n -design -design -design -design -design -design -design -design -design -design -design -deesign -design -design -design -design -design -design -design -design -design -design -design
n -design -design -design -design -design -design -design -design -design -design -design -deesign -design -design -design -design -design -design -design -design -design -design -design
n -design -design -design -design -design -design -design -design -design -design -design -deesign -design -design -design -design -design -design -design -design -design -design -design
n -design -design -design -design -design -design -design -design -design -design -design -deesign -design -design -design -design -design -design -design -design -design -design -design
n -design -design -design -design -design -design -design -design -design -design -design -deMORCHE
esign -design -design -design -design -design -design -design -design Dominique
-design -design
-design
n -design -design -design -design -design -design -design -design -design -design -design -deesign -design -design -design -design -design -design -design -design -design -design -design
n -design -design -design -design -design -design -design -design -design -design -design -deesign -design -design -design -design -design -design -design -design -design -design -design
n -design -design -design -design -design -design -design -design -design -design -design -deesign -design -design -design -design -design -design -design -design -design -design -design
n -design -design -design -design -design -design -design -design -design -design -design -deesign -design -design -design -design -design -design -design -design -design -design -design
n -design -design -design -design -design -design -design -design -design -design -design -deesign -design -design -design -design -design -design -design -design -design -design -design
n -design -design -design -design -design -design -design -design -design -design -design -deesign -design -design -design -design -design -design -design -design -design -design -design
n -design -design -design -design -design -design -design -design -design -design -design -deesign -design -design -design -design -design -design -design -design -design -design -design
n -design -design -design -design -design -design -design -design -design -design -design -deesign -design -design -design -design -design -design -design -design -design -design -design
n -design -design -design -design -design -design -design -design -design -design -design -deesign -design -design -design -design -design -design -design -design -design -design -design
n -design -design -design -design -design -design -design -design -design -design -design -deesign -design -design -design -design -design -design -design -design -design -design -design
n -design -design -design -design -design -design -design -design -design -design -design -deesign -design -design -design -design -design -design -design -design -design -design -design
n -design -design -design -design -design -design -design -design -design -design -design -deesign -design -design -design -design
Leti-design
team -design -design -design -design -design -design
n -design -design -design -design -design -design -design -design -design -design -design -deesign -design -design -design -design -design -design -design -design -design -design -design
n -design -design -design -design -design -design -design -design -design -design -design -deesign -design -design -design -design -design -design -design -design -design -design -design
n -design -design -design -design -design -design -design -design -design -design -design -deesign -design -design -design -design -design -design -design -design -design -design -design
n -design -design -design -design -design -design -design -design -design -design -design -deesign -design -design -design -design -design -design -design -design -design -design -design
n -design -design -design -design -design -design -design -design -design -design -design -deesign -design -design -design -design -design -design -design -design -design -design -design
n -design -design -design -design -design -design -design -design -design -design -design -deesign -design -design -design -design -design -design -design -design -design -design -design
n -design -design -design -design -design -design -design -design -design -design -design -de-
34
Awards
optics and photonics -optics and photonics -optics and photonics -optics and photonics -optics and
photonics -optics and photonics -optics and photonics -optics and photonics -optics and photonics
-optics and photonics -optics and photonics -optics and photonics -optics and photonics -optics and
photonics -optics and photonics -optics and photonics -optics and photonics -optics and photonics
-optics and photonics -optics and photonics -optics and photonics -optics and photonics -optics and
photonics -optics and photonics -optics and photonics -optics and photonics -optics and photonics
-optics and photonics -optics and photonics -optics and photonics -optics and photonics -optics and
photonics -optics and photonics -optics and photonics -optics and photonics -optics and photonics
-optics and photonics -optics and photonics -optics and photonics -optics and photonics -optics and
photonics -optics and photonics -optics and photonics -optics and photonics -optics and photonics
-optics and photonics -optics and photonics -optics and photonics -optics and photonics -optics and
photonics -optics and photonics -optics and photonics -optics and photonics -optics and photonics
-optics and photonics -optics and photonics -optics and photonics -optics and photonics -optics and
photonics -optics and photonics -optics and photonics -optics and photonics -optics and photonics
-optics and photonics -optics and photonics -optics and photonics -optics and photonics -optics and
photonics -optics and photonics -optics and photonics -optics and photonics -optics and photonics
Clément
-optics andLOBRE
photonics -optics and photonics -optics and photonics -optics and photonics -optics and
photonics -optics and photonics -optics and photonics -optics and photonics -optics and photonics
-optics and photonics -optics and photonics -optics and photonics -optics and photonics -optics and
photonics -optics and photonics -optics and photonics -optics and photonics -optics and photonics
-optics and photonics -optics and photonics -optics and photonics -optics and photonics -optics and
photonics -optics and photonics -optics and photonics -optics and photonics -optics and photonics
-optics and photonics -optics and photonics -optics and photonics -optics and photonics -optics and
design
t VAR I 2013
a
r
e
p
a
P
t
n
e
d
tu
Best S
th
ard at the 4 Eurost Student Paper aw
Be
e
th
r,
ed
eiv
rec
e
Germany. Th pape
Lionel Vincent
bility in Karlsruhe,
ria
Va
OS
st
CM
Co
on
wp
Lo
ing
pean Worksho
hip Monitoring Us
Fast Voltage On-C
of meeting
ge
en
all
ch
“Temperature and
e
th
research into
on
d
se
ba
s
wa
”,
embedded systems.
Digital Sensors
ncy requirements of
cie
ffi
r-e
we
po
d
an
performance
NE
from CATRE
Innovation Award
cations project
as for Mobile Appli
nn
te
An
d
an
rs
fie
for outstanding
The Power Ampli
E Innovation Award
EN
TR
CA
13
20
e
th
wer amplifiers and
(PANAMA) won
and, multi-mode po
-b
lti
mu
t
en
ici
eff
ntributions of Leti,
work on more
recognized the co
ard
aw
e
Th
s.
em
gne, IMS, Thales,
transmitter syst
Paris, Telecom Breta
om
lec
Te
O,
TN
,
ics
AMCAD Engineering,
STMicroelectron
ilent, ESIEE, IEMN,
Ag
,
ve
wa
cro
Mi
n
e led Leti’s team.
KU Leuven, Orba
ies. Dominique Morch
log
no
ch
Te
2MC
d
ELTA Systems, an
ence
Exhibition excell
ergyers to develop en
Leti and 23 partn
ing
olv
ns,
inv
tio
t
ca
pli
jec
ap
pro
SEEL, a
ail and shop
with a focus on ret
ing
ht
n
lig
ea
art
rop
Eu
sm
d
13
an
efficient
at the 20
Exhibition Contest
e
th
in
ple
am
ce
ex
pla
an
nd
won seco
The exhibit featured
rum in Barcelona.
the
Nanoelectronics Fo
sources adapted to
, in which the light
ing
ht
lig
ng.
ed
tti
ck
se
tra
ail
eret
of presenc
a mock-up
havior of people in
be
d
or,
an
ns
se
ion
at
ion
loc
at
presence,
ed people-loc
-cost, infrared-bas
ed
uc
red
w
ne
a
rk,
Leti’s wo
the demo.
was at the heart of
silicon components -silicon components -silicon components -silicon components -silicon com
nents -silicon components -silicon components -silicon components -silicon components -sili
components -silicon components -silicon components -silicon components -silicon compone
-silicon components -silicon components -silicon components -silicon components -silicon co
ponents -silicon components -silicon components -silicon components -silicon components
licon components -silicon components -silicon components -silicon components -silicon com
nents -silicon components -silicon components -silicon components -silicon components -sili
components -silicon components -silicon components -silicon components -silicon compone
-silicon components -silicon components -silicon components -silicon components -silicon co
ponents -silicon components -silicon components -silicon components -silicon components
licon components -silicon components -silicon components -silicon components -silicon com
nents -silicon components -silicon components -silicon components -silicon components -sili
s
nt
ne
components -silicon components -silicon components -silicon components -silicon compone
silicon compo
-silicon components -silicon components -silicon components -silicon components -silicon co
ponents -silicon components -silicon components -silicon components -silicon components
licon components -silicon components -silicon components -silicon components -silicon com
nents -silicon components -silicon components -silicon components -silicon components -sili
components -silicon components -silicon components -silicon components -silicon compone
at the
ard
aw
r
pe
Pa
t
en
ud
-silicon components -silicon components -silicon components -silicon components -silicon co
the Best SOI St
ed
eiv
rec
ri
nfe
sk
Co
jew
d
ponents -silicon components -silicon components -silicon components -silicon components
Heimanu Niebo
chnology unifie
Te
ics
ron
ct
ele
cro
shold Mi
licon components -silicon components -silicon components -silicon components -silicon com
m FDSOI
10n
for
ts
ac
nt
IEEE SOI-3D-Subthre
Co
d
nents -silicon components -silicon components -silicon components -silicon components -sili
per, “Self-Aligne
pa
e
Th
ilif.
ret
Ca
eo
y,
th
ere
d
Heimanu
NIEBOJEWSKI
components
-silicon components -silicon components -silicon components -silicon compone
ence in Mont
nted a detaile
se
pre
”,
ion
at
alu
Ev
-silicon components -silicon components -silicon components -silicon components -silicon co
to Circuit
uction of
rod
int
g
lin
ab
Node: From Device
en
ts
emen
ponents -silicon components -silicon components -silicon components -silicon components
the technical requir
delay.
licon components -silicon components -silicon components -silicon components -silicon com
cal investigation of
t additional circuit
ou
th
wi
de
no
m
10n
ts at the
nents -silicon components -silicon components -silicon components -silicon components -sili
self-aligned contac
components -silicon components -silicon components -silicon components -silicon compone
-silicon components -silicon components -silicon components -silicon components -silicon co
ponents -silicon components -silicon components -silicon components -silicon components
licon components -silicon components -silicon components -silicon components -silicon com
nents -silicon components -silicon components -silicon components -silicon components -sili
components -silicon components -silicon components -silicon components -silicon compone
-silicon components -silicon components -silicon components -silicon components -silicon co
ponents -silicon components -silicon components -silicon components -silicon components
and Ovonics
ge
an
Ch
e
as
Ph
n
licon components -silicon components -silicon components -silicon components -silicon com
by the Europea
red
d
an
no
r
ho
pe
s
Pa
wa
st
ri
Be
Su
Manan
nents -silicon components -silicon components -silicon components -silicon components -sili
an award for
th
wi
rlin
Be
in
13
S) 20
components -silicon components -silicon components -silicon components -silicon compone
mory for NeuroMe
ge
Symposium (E/PCO
an
Ch
se
ha
-silicon components -silicon components -silicon components -silicon components -silicon co
presentation, “P
e
ive
Th
ist
.
res
ion
at
ing
nt
erg
se
Oral Pre
ponents -silicon components -silicon components -silicon components -silicon components
ed how an em
ow
sh
,
s”
em
st
Sy
d
ns an
used to design licon components -silicon components -silicon components -silicon components -silicon com
be
n
ca
morphic Applicatio
ry
mo
me
nents -silicon
SURIcomponents -silicon components -silicon components -silicon components -sili
y like phase-change
ired com- Manan
memory technolog
components -silicon components -silicon components -silicon components -silicon compone
lerant, and bio-insp
-to
ity
bil
ria
va
t,
en
effici
-silicon components -silicon components -silicon components -silicon components -silicon co
large-scale, energyponents -silicon components -silicon components -silicon components -silicon components
s.
em
st
sy
puting
licon components -silicon components -silicon components -silicon components -silicon com
nents -silicon components -silicon components -silicon components -silicon components -sili
components -silicon components -silicon components -silicon components -silicon compone
-silicon components -silicon components -silicon components -silicon components -silicon co
ponents -silicon components -silicon components -silicon components -silicon components
g Investi- licon components -silicon components -silicon components -silicon components -silicon com
un
Yo
13
20
de
Sla
e
e-De
nents -silicon components -silicon components -silicon components -silicon components -sili
ed the Paul and De
ntacts for components -silicon components -silicon components -silicon components -silicon compone
Daniele Sette receiv th
ce on Electrical Co
ren
nfe
Co
LM
HO
E
59 IEE
Mem- -silicon components -silicon components -silicon components -silicon components -silicon co
gator Award at the
Fully Inkjet Printed
ctrical Contact in a
Ele
e
th
s of ponents -silicon components -silicon components -silicon components -silicon components
of
nt
dy
me
tu
ure
“S
licon components -silicon components -silicon components -silicon components -silicon com
the paper,
electrical meas
on
ed
us
foc
ich
wh
project,
ers, valida- nents -silicon components -silicon components -silicon components -silicon components -sili
lay
r
ve
sil
ed
brane Switch.” The
int
pr
inkjet
-silicon components -silicon components -silicon components -silicon compone
ance between two
ns. Leti components
-silicon components -silicon components -silicon components -silicon components -silicon co
the contact resist
al contact applicatio
ric
ct
ele
for
ial
nt
Daniele
SETTE components -silicon components -silicon components -silicon components
y pote
ponents -silicon
ted inkjet technolog
licon components -silicon components -silicon components -silicon components -silicon com
n the award in 2012.
wo
er
rci
Me
vid
Da
researcher
nents -silicon components -silicon components -silicon components -silicon components -sili
components -silicon components -silicon components -silicon components -silicon compone
-silicon components -silicon components -silicon components -silicon components -silicon co
ponents -silicon components -silicon components -silicon components -silicon components
licon components -silicon components -silicon components -silicon components -silicon com
nents -silicon components -silicon components
-silicon components -silicon components -sili
per
12 Best Pa-silicon
ULIS 20components
components
components -silicon components -silicon compone
the -silicon
ed
eiv
rec
rs
ho
ut
-a
his co
-silicon components
e paper, -silicon components -silicon components -silicon co
U.K. Thcomponents
ry, -silicon
Remi Coquand and
Coventcomponents
ce in -silicon
ponents
-silicon
components -silicon components -silicon components
2013 conferen
IS
UL
e
down
th
at
ors
ist
en
trans components
award, giv
licon
components
-silicon components -silicon components -silicon com
nanowire -silicon
I
SO
te
ga
Tri
e
at
metal-g
ate
nents -silicon components
-silicon components -silicon components -sili
e tri-gcomponents
th-silicon
in
es
rti
pe
“Scaling of high-k/
pro
rt
nspo
-silicon components -silicon
components -silicon components -silicon compone
that the tracomponents
ed
s
ow
ion
sh
ut
,
rib
h”
nt
dt
co
wi
-silicon
-silicon components -silicon components -silicon components -silicon co
Remi COQUAND to 10nm
the additive
ed bycomponents
r
ed are fully governponents -silicon are
planacomponents
components
-silicon
-silicon components -silicon components
to wide
d
nanowire (TGNW) us
mp
Co
s.
all
ew components -silicon componentsof-silicon components -silicon components -silicon com
and (110) sidlicon
ce
rfa
L)
su
p
DIB
to
d
an
0)
rity (SS -silicon components -silicon components -silicon components -sili
of the (10
nents
-silicon
integcomponents
tatic
vement of electros
components -silicon components -silicon components -silicon components -silicon compone
devices, the impro
d.
te
tra
ns
mo components -silicon components -silicon components -silicon components -silicon co
FET was clearly de-silicon
scaled-down TGNW
ponents -silicon components -silicon components -silicon components -silicon components
licon components -silicon components -silicon components -silicon components -silicon com
nents -silicon components -silicon components -silicon components -silicon components -sili
components -silicon components -silicon components -silicon components -silicon compone
-silicon components -silicon components -silicon components -silicon components -silicon co
ponents -silicon components -silicon components -silicon components -silicon components
licon components -silicon components -silicon components -silicon components -silicon com
nents -silicon components -silicon components -silicon components -silicon components -sili
components -silicon components -silicon components -silicon components -silicon compone
-silicon components -silicon components -silicon components -silicon components -silicon co
ponents -silicon components -silicon components -silicon components -silicon components
licon components -silicon components -silicon components -silicon components --silicon com
nents -silicon components -silicon components -silicon components -silicon components -sili
components -silicon components -silicon components -silicon components -silicon compone
-silicon components -silicon components -silicon components -silicon components -silicon co
ponents -silicon components -silicon components -silicon components -silicon components
licon components -silicon components -silicon components -silicon components -silicon com
Leti Activity Report > 2013
35 components
nents -silicon components -silicon components -silicon
-silicon components -sili
components -silicon components -silicon components -silicon components -silicon compone
t Paper
Best SOI Studen
sentation
re
P
l
ra
O
d
n
a
r
e
Best Pap
at E/PCOS
stigator
IEEE Young Inve
Award
S 2012
Best Paper at ULI
Awards
nents
silicon compo
silicon components -silicon components -silicon components -silicon components -silicon
components -silicon components -silicon components -silicon components -silicon components -silicon components -silicon components -silicon components -silicon components -silicon components -silicon components -silicon components -silicon components -silicon comrd
ponents -silicon components -silicon components -silicon components -silicon components
-silicon components -silicon components -silicon components -silicon components -silicon
MINES-ParisTech
–
F
ME
CE
d
an
components -silicon components -silicon components -silicon components -silicon compocroelectronics
Mi
oST
mp
ti,
Sy
Le
al
m
ion
fro
A team
nents -silicon components -silicon components -silicon components -silicon components -sithe 2013 Internat
at
t
es
nt
co
eo
e vid
rd
licon components -silicon components -silicon components -silicon components -silicon comJose, Calif. The
n
Sa
won 3 Place in th
in
A)
TF
(IS
ponents -silicon components -silicon components -silicon components -silicon components
ilure Analysis
Fa
M
d
SE
an
o
nd
ing
st
era
Te
Op
sium for
-silicon components -silicon components -silicon components -silicon components -silicon
ion, “First in
at
nt
se
pre
’s
am
te
the
components -silicon components -silicon components -silicon components -silicon compoStructures.”
V
TS
in
video was part of
ids
Vo
d
nents -silicon
components -silicon components -silicon components -silicon components -siSimon
GOUSSEAU
igration-Induce
rom
Sct
NE
Ele
MI
–
of
F
n
ME
tio
Observa
licon components -silicon components -silicon components -silicon components -silicon comLeti, ST and CE
of
au
se
us
Go
on
re Sim
of ST,
ponents -silicon components -silicon components -silicon components -silicon components
Team members we
of Leti; Alexis Farcy
-silicon components -silicon components -silicon components -silicon components -silicon
d Stéphane Moreau
an
hu
Suc
NE
Bo
MI
–
vid
F
Da
ME
;
CE
ParisTech
components -silicon components -silicon components -silicon components -silicon compoFrançois Bay of
d
an
l,
Ina
rim
Ka
,
nnet
nents -silicon components -silicon components -silicon components -silicon components -siand Pierre Monmito
licon components -silicon components -silicon components -silicon components -silicon com.
ch
ParisTe
ponents -silicon components -silicon components -silicon components -silicon components
-silicon components -silicon components -silicon components -silicon components -silicon
components -silicon components -silicon components -silicon components -silicon components -silicon components -silicon components -silicon components -silicon components -silicon components -silicon components -silicon components -silicon components -silicon components -silicon components -silicon components -silicon components -silicon components
Line, was
m
gra
Pro
ls
ria
te
-silicon components -silicon components -silicon components -silicon components -silicon
r of Leti’s Ma
ge
na
ma
lrt,
co
be
s
ge
Au
components -silicon components -silicon components -silicon components -silicon compoJean-Jacques
ty, which encoura
cie
So
al
tic
Op
h
nc
nents -silicon components -silicon components -silicon components -silicon components -siof the Fre
Among his
s.
nic
tro
lec
elected president
-e
to
licon components -silicon components -silicon components -silicon components -silicon comoptics and op
in
le
op
pe
for
n
rm
ee
tfo
tw
ponents -silicon components -silicon components -silicon components -silicon components
laboration be
a technology pla
o,
tim
Pla
ed
lop
ve
ti, he de
-silicon components -silicon components -silicon components -silicon components -silicon
e microchip
th
ing
at
cre
achievements at Le
in
ed
components -silicon components -silicon components -silicon components -silicon compoand was involv
s,
em
st
y
sy
log
Jean-Jacques
AUBERT
al
no
tic
ch
op
te
nents -silicon components -silicon components -silicon components -silicon components -sipackaging of
ty of opticalrie
va
a
ld
he
s
ha
rt
be
Au
al
tic
J.J
licon
components
-silicon components -silicon components -silicon components -silicon comop
y.
in
log
laser techno
as a lecturer
ponents -silicon components -silicon components -silicon components -silicon components
including serving
r,
ree
e
ca
th
his
of
g
er
rin
mb
-silicon components -silicon components -silicon components -silicon components -silicon
positions du
titute and as a me
le Polytechnic Ins
components -silicon components -silicon components -silicon components -silicon compomaterials at Grenob
nents -silicon components -silicon components -silicon components -silicon components -sies magazine.
iqu
on
ot
Ph
at
ard
licon components -silicon components -silicon components -silicon components -silicon comeditorial bo
ponents -silicon components -silicon components -silicon components -silicon components
-silicon components -silicon components -silicon components -silicon components -silicon
components -silicon components -silicon components -silicon components -silicon components -silicon components -silicon components -silicon components -silicon components -silicon components -silicon components -silicon components -silicon components -silicon components -silicon components -silicon components -silicon components -silicon components
-silicon components -silicon components -silicon components -silicon components -silicon
ty
cie
So
MT
CP
components -silicon components -silicon components -silicon components -silicon comporge of the IEEE
-la
at
ermb
me
ed
elect
nufacturing nents -silicon components -silicon components -silicon components -silicon components -siMa
d
an
Gilles Poupon was
ing
ag
ck
Pa
,
components -silicon components -silicon components -silicon components -silicon com. The Components
tists and licon
Board of Governors
ponents -silicon components -silicon components -silicon components -silicon components
ional forum for scien
at
ern
int
g
din
lea
e
is th
revolu- -silicon components -silicon components -silicon components -silicon components -silicon
Technology Society
and development of
e research, design
th
in
d
Gilles, components -silicon components -silicon components -silicon components -silicon compoge
g.
ga
rin
en
tu
rs
fac
enginee
nents -silicon components -silicon components -silicon components -silicon components -siing and manu
ag
ck
pa
s
em
st
sy
micro
tive in electro- licon components -silicon components -silicon components -silicon components -silicon comac
en
be
tionary advances in
s
ha
,
ard
bo
ponents -silicon components -silicon components -silicon components -silicon components
tist to serve on the
Gilles
France’s first scien
-siliconPOUPON
components -silicon components -silicon components -silicon components -silicon
9.
199
ce
sin
components -silicon components -silicon components -silicon components -silicon compoing
ag
nic pack
o contest
v ide
3 Place in ISTFA
president
ty
ie
c
o
S
l
a
c
ti
p
O
French
rd of Governors
IEEE CPMT Boa
2014-2016
ents -silicon components -silicon components -silicon components -silicon components -silicon
licon components -silicon components -silicon components -silicon components -silicon compoomponents -silicon components -silicon components -silicon components -silicon components -sits -silicon components -silicon components -silicon components -silicon components -silicon comcomponents -silicon components -silicon components -silicon components -silicon components
nents -silicon components -silicon components -silicon components -silicon components -silicon
licon components -silicon components -silicon components -silicon components -silicon compoomponents -silicon components -silicon components -silicon components -silicon components -sits -silicon components -silicon components -silicon components -silicon components -silicon comcomponents -silicon components -silicon components -silicon components -silicon components
nents -silicon components -silicon components -silicon components -silicon components -silicon
licon components -silicon components -silicon components -silicon components -silicon compoomponents -silicon components -silicon components -silicon components -silicon components -sits -silicon components -silicon components -silicon components -silicon components -silicon comcomponents -silicon components -silicon components -silicon components -silicon components
nents -silicon components -silicon components -silicon components -silicon components -silicon
licon components -silicon components -silicon components -silicon components -silicon compoomponents -silicon components -silicon components -silicon components -silicon components -sits -silicon components -silicon components -silicon components -silicon components -silicon comcomponents -silicon components -silicon components -silicon components -silicon components
nents -silicon components -silicon components -silicon components -silicon components -silicon
licon components -silicon components -silicon components -silicon components -silicon compoomponents -silicon components -silicon components -silicon components -silicon components -sits -silicon components -silicon components -silicon components -silicon components -silicon comcomponents -silicon components -silicon components -silicon components -silicon components
nents -silicon components -silicon components -silicon components -silicon components -silicon
Simon DELEONIBUS
licon components -silicon components -silicon components -silicon components
-silicon compoomponents -silicon components -silicon components -silicon components -silicon components -sits -silicon components -silicon components -silicon components -silicon components -silicon comcomponents -silicon components -silicon components -silicon components -silicon components
nents -silicon components -silicon components -silicon components -silicon components -silicon
licon components -silicon components -silicon components -silicon components -silicon compoomponents -silicon components -silicon components -silicon components -silicon components -si-
36
ev ices
IEEE Electron D
air
Society v ice ch
air of Region
was elected vice ch
us
nib
leo
De
on
t Sim
) Electron
Leti Chief Scientis
ics Engineers (IEEE
ctrical and Electron
Ele
of
e
ut
fessional
tit
pro
s
Ins
e
rou
8 of th
received nume
s
ha
o
wh
,
us
nib
leo
urer since
Devices Society. De
Distinguished Lect
r, has been an IEEE
ree
ca
his
EDS Board
g
E
rin
IEE
du
e
rs
hono
s been on th
w since 2006, and ha
llo
Fe
E
rica, and
IEE
Af
an
,
ia,
ss
04
Jan 20
ludes Europe, Ru
inc
8
n
gio
Re
.
09
20
of Governors since
.
st
Ea
le
dd
Mi
the
ting uished
10-year IEEE dis
lecturer
(IEEE) recognized
ctronics Engineers
Ele
d
an
al
ric
ct
Ele
its Distinguished
The Institute of
as a lecturer with
ce
rvi
se
g
a
lon
’s
Fellow, speaks on
Simon Deleonibus
us, who is an IEEE
nib
leo
De
.
eard
int
aw
s
morie
Lecturer 10-year
ronics CMOS and me
including nanoelect
d materials,
an
es
vic
de
variety of topics,
us integration of
eo
en
rog
te
he
,
ng
Moore, More than
gration and scali
d integration, More
an
ing
nd
bo
,
ion
rat
M/NEMS, 3D integ
CMOS devices.
Moore, and beyond
Awards
logies
silicon techno
silicon technologies -silicon technologies -silicon technologies -silicon technologies -silicon te
nologies -silicon technologies -silicon technologies -silicon technologies -silicon technologies
licon technologies -silicon technologies -silicon technologies -silicon technologies -silicon tech
logies -silicon technologies -silicon technologies -silicon technologies -silicon technologies -sili
technologies -silicon technologies -silicon technologies -silicon technologies -silicon technolog
-silicon technologies -silicon technologies -silicon technologies -silicon technologies -silicon te
Osaka, Japan,
in
13
20
RF
TX
at
nologies -silicon technologies -silicon technologies -silicon technologies -silicon technologies
st Poster award
Be
ray
a
n
Xn
wo
tio
by
ec
Ca
r
efl
Bérenge
licon technologies -silicon technologies -silicon technologies -silicon technologies -silicon tech
nts in total-r
me
lop
ve
de
w
ne
ed on
logies -silicon technologies -silicon technologies -silicon technologies -silicon technologies -sili
RF combined
GiX
d
an
a conference focus
RR
“X
technologies -silicon technologies -silicon technologies -silicon technologies -silicon technolog
The poster, titled
.
”,
sis
ns
aly
tio
an
ca
pli
ce
ap
en
Bérenger
CABY -silicon technologies -silicon technologies -silicon technologies -silicon te
fluoresc
-silicon technologies
photovoltaic
for
s
ure
ct
ru
st
CO
tal/T
nologies -silicon technologies -silicon technologies -silicon technologies -silicon technologies
zing-incidence
gra
d
an
analysis of TCO/me
ity
tiv
lec
licon technologies -silicon technologies -silicon technologies -silicon technologies -silicon tech
t results in X-ray ref
e oxide (TCO)
presented the lates
logies -silicon technologies -silicon technologies -silicon technologies -silicon technologies -sili
nsparent conductiv
tra
on
sis
aly
an
d
ine
technologies -silicon technologies -silicon technologies -silicon technologies -silicon technolog
fluorescence X comb
-silicon technologies -silicon technologies -silicon technologies -silicon technologies -silicon te
.
les
mp
sa
O
TC
d
metal an
nologies -silicon technologies -silicon technologies -silicon technologies -silicon technologies
licon technologies -silicon technologies -silicon technologies -silicon technologies -silicon tech
logies -silicon technologies -silicon technologies -silicon technologies -silicon technologies -sili
technologies -silicon technologies -silicon technologies -silicon technologies -silicon technolog
-silicon technologies -silicon technologies -silicon technologies -silicon technologies -silicon te
nologies -silicon technologies -silicon technologies -silicon technologies -silicon technologies
ster award
Po
st
Be
a
n
wo
ls
licon technologies -silicon technologies -silicon technologies -silicon technologies -silicon tech
Applied Materia
d
an
ics
no
ron
ch
ct
te
ele
MP
logies -silicon technologies -silicon technologies -silicon technologies -silicon technologies -sili
Leti, STMicro
Planarization/C
on
ce
ren
nfe
Co
al
ernation
technologies -silicon technologies -silicon technologies -silicon technologies -silicon technolog
Stop on Gate
OI
DS
14F
at ICPT 2013, the Int
w
ne
for
-silicon technologies -silicon technologies -silicon technologies -silicon technologies -silicon te
“Challenges
led
Tit
.
ean
ch
iw
in
Ta
,
ma
hu
e
nologies -silicon technologies -silicon technologies -silicon technologies -silicon technologies
logy in Hsinc
research into th
of
s
ult
res
ed
nt
se
ster pre
licon
technologies
technologies
-silicon technologies -silicon technologies -silicon tech
. Recipients
ion
rat
eg
Cédric
PERROT -silicon
& Catherine
Euvrard
int
Oxide CMP”, the po
OI
DS
logies -silicon technologies -silicon technologies -silicon technologies -silicon technologies -sili
allenges for 14F
ch
g
r
hin
ge
lis
po
sin
l
Hin
ica
r
an
vie
technologies -silicon technologies -silicon technologies -silicon technologies -silicon technolog
mical mech
Maurice Rivoire, Oli
Sébastien Gaillard,
-silicon technologies -silicon technologies -silicon technologies -silicon technologies -silicon te
rd of Leti.
vra
Eu
ne
eri
were Cédric Perrot,
th
Ca
d
nologies -silicon technologies -silicon technologies -silicon technologies -silicon technologies
ed Materials an
pli
Ap
of
ard
Pit
ric
of ST; Frédé
licon technologies -silicon technologies -silicon technologies -silicon technologies -silicon tech
logies -silicon technologies -silicon technologies -silicon technologies -silicon technologies -sili
technologies -silicon technologies -silicon technologies -silicon technologies -silicon technolog
-silicon technologies -silicon technologies -silicon technologies -silicon technologies -silicon te
nologies -silicon technologies -silicon technologies -silicon technologies -silicon technologies
onsored by licon technologies -silicon technologies -silicon technologies -silicon technologies -silicon tech
sp
t
es
nt
co
T
AR
Nano
logies -silicon technologies -silicon technologies -silicon technologies -silicon technologies -sili
e 2013 December
student technologies -silicon technologies -silicon technologies -silicon technologies -silicon technolog
Cédric Thys won th
A first-year Ph.D.
le.
ob
en
Gr
in
THYS
n
Foundatio
-silicon technologies
-silicon technologies -silicon technologies -silicon technologies -silicon te
anosili- Cédric
the Nanosciences
e realization of org
th
on
ng
rki
nologies
-silicon technologies -silicon technologies -silicon technologies -silicon technologies
wo
is
c
dri
Cé
d
,
an
um
al
lgi
tic
Be
op
in
e
licon technologies -silicon technologies -silicon technologies -silicon technologies -silicon tech
from Liège,
aracterization of th
microcavities for ch
identify the logies -silicon technologies -silicon technologies -silicon technologies -silicon technologies -sili
ll
wi
rk
wo
cate-based optical
His
ls.
ria
-silicon technologies -silicon technologies -silicon technologies -silicon technolog
rties of those mate
their technologies
-silicon technologies -silicon technologies -silicon technologies -silicon technologies -silicon te
light-emission prope
properties, allowing
ce
en
sc
ine
lum
e
es
ks
derlie th
-silicon technologies -silicon technologies -silicon technologies -silicon technologies
anosillicate microdis nologies
mechanisms that un
licon technologies -silicon technologies -silicon technologies -silicon technologies -silicon tech
applications. The org
ing
ht
l
lig
ica
or
log
ics
no
on
ch
logies -silicon technologies -silicon technologies -silicon technologies -silicon technologies -sili
use for phot
ed in the up-line Te
image were elaborat
Institute of technologies -silicon technologies -silicon technologies -silicon technologies -silicon technolog
e
th
th
wi
in his award-winning
ion
rat
llabo
-silicon technologies -silicon technologies -silicon technologies -silicon technologies -silicon te
anroom in close co
nologies -silicon technologies -silicon technologies -silicon technologies -silicon technologies
Platform (PTA) cle
).
ac
-In
EA
(C
s
Cryogenic
licon technologies -silicon technologies -silicon technologies -silicon technologies -silicon tech
Nanosciences and
logies -silicon technologies -silicon technologies -silicon technologies -silicon technologies -sili
technologies -silicon technologies -silicon technologies -silicon technologies -silicon technolog
-silicon technologies -silicon technologies -silicon technologies -silicon technologies -silicon te
nologies -silicon technologies -silicon technologies -silicon technologies -silicon technologies
licon technologies -silicon technologies -silicon technologies -silicon technologies -silicon tech
logies -silicon technologies -silicon technologies -silicon technologies -silicon technologies -sili
technologies -silicon technologies -silicon technologies -silicon technologies -silicon technolog
-silicon technologies
French -silicon technologies -silicon technologies -silicon te
of thetechnologies
ard-silicon
ive botechnologies
execut-silicon
-silicon
technologies -silicon technologies -silicon technologies
inted to thenologies
po
ap
s
Union
wa
al
ult
ion
na
at
ern technologies
Olivier Re
licon
technologies
-silicon technologies -silicon technologies -silicon tech
of the Int-silicon
er
mb
me
a
is
Olivier RENAULT
ich
gh
FV), wh
logies -silicon technologies
technologies
-silicon technologies -silicon technologies -sili
). Throu
TA-silicon
SV
(IU
ns
Vacuum Society (S
tio
ca
pli
Ap
-silicon technologies en
-silicon
technologies -silicon technologies -silicon technolog
niques andtechnologies
ch
Te
,
gice
d
ien
an
Sc
ers
for Vacuum
-silicon
-silicon technologies -silicon technologies -silicon technologies -silicon te
orts research
supptechnologies
rences, the societynologies -silicon
g-edge
technologies
-silicon
technologies -silicon technologies -silicon technologies
d leadin
te
cia
so
training and confe
as
d
an
ies technologies -silicon
licon
technologies
-silicon technologies -silicon technologies -silicon tech
um technolog
cu
va
ion
sit
th
wi
po
de
ng
rki
thin-film -silicon technologies -silicon technologies -silicon technologies -sili
neers wo
logies
-silicon
zation,technologies
eri
ct
ara
ch
ls
ria
te
like technologies -silicon technologies -silicon technolog
as ma
technologies -silicon
technologies
-silicon
w materials
techniques, such
tion of ne-silicon
applica
technologies
technologies -silicon technologies -silicon technologies -silicon te
well as the-silicon
as
g,
vin
gra
en
a
and plasm
nologies -silicon technologies -silicon technologies -silicon technologies -silicon technologies
and biomaterials.licon technologies -silicon technologies -silicon technologies -silicon technologies -silicon tech
ceramics, polymers
logies -silicon technologies -silicon technologies -silicon technologies -silicon technologies -sili
technologies -silicon technologies -silicon technologies -silicon technologies -silicon technolog
-silicon technologies -silicon technologies -silicon technologies -silicon technologies -silicon te
nologies -silicon technologies -silicon technologies -silicon technologies -silicon technologies
licon technologies -silicon technologies -silicon
-silicon technologies -silicon tech
red by technologies
onsotechnologies
contest sp
logies
-silicon
-silicon
-silicon technologies -silicon technologies -sili
ARTtechnologies
no
Na
ril
Ap
13
20
e
won th
technologies -silicon im
technologies
opyra-technologies -silicon technologies -silicon technolog
age, “Nan-silicon
Mathieu Vigouroux
le for his -silicon
enobtechnologies
-silicon
technologiesa-silicon technologies -silicon technologies -silicon te
n in Gr
tio
da
un
Fo
s
es
ce
vic
ien
c Novel De-silicon Sc
the Nanosc
nologies
-silicon
technologies -silicon technologies -silicon technologies
Minatetechnologies
e
th
in
t
en
ud
st
re technologies -silicon technologies -silicon tech
a Ph.D.
licon technologies -silicon
-silicon
up a pictu
touchingtechnologies
mids”. Vigouroux,
age by
e im-silicon
logies
technologies -silicon technologies
ated th
cre
,
. -silicon technologies -silicon technologies -sili
S)
ss
INO
ce
(M
pro
ory
th
regrow -silicon technologies
ling Laborat
turetechnologies
technologies
-silicon
-silicon technologies -silicon technolog
mpera
-te
igh
/h
ion
sit
po
ific de
-silicon technologies
-silicon
technologies
-silicon technologies -silicon technologies -silicon te
ids aims to
ram
py
no
taken after a spec
na
e
th
duced -silicon technologies -silicon technologies
-silicon technologies -silicon technologies
thod that pronologies
ing.
or LED light-silicon
energytechnologies
The texturizing me
licon
technologies
technologies -silicon technologies -silicon tech
solar -silicon
for
es
vic
de
of
ce
e surfa
logies -silicon technologies -silicon technologies -silicon technologies -silicon technologies -sili
increase the effectiv
technologies -silicon technologies -silicon technologies -silicon technologies -silicon technolog
-silicon technologies -silicon technologies -silicon technologies -silicon technologies -silicon te
nologies -silicon technologies -silicon technologies -silicon technologies -silicon technologies
licon technologies -silicon technologies -silicon technologies -silicon technologies -silicon tech
logies -silicon technologies -silicon technologies -silicon technologies -silicon technologies -sili
r award
TXR F Best Poste
PT 2013
Best Poster at IC
oART w inner
December Nan
executive
ty
ie
c
o
S
m
u
u
c
French Va
board
April NanoART
w inner
37
Leti Activity Report > 2013
Startups created in 2013
Startups in incubation
Startups created in 2013
Startups of theyear
Startups of the year
telecommunications
Primo1D: a smart startup
Dominique Vicard
[email protected]
Launched by Leti last summer, Primo1D makes solutions for integrating
electronics in materials and objects. Its first product is E-Thread® yarn,
which includes RFID tags. E-Thread® is an innovative microelectronic
packaging technology that allows the direct connection of a chip to
a set of two conductors, which can provide the functions of antenna,
power and/or data bus. This allows a 10x improvement in size, assembly
time and reliability compared to classic microelectronic packaging.
The E-Thread® assembly can be incorporated inside a yarn and used
by the textile and plastic industries using standard production tools.
Electronics such as LEDs, RFIDs and sensors can then be truly integrated
in materials and objects.
Bpifrance, the French public investment bank, gave Primo1D a technologydevelopment award of €400,000 in 2013.
See Award and Honors, page 33.
www.primo1d.com
RFID E-Thread®
Primo1D
©
LabPad®, a minilab
for point-of-care testing
Vincent Poher
[email protected]
www.avalun.com
Created in 2013, the company Avalun currently develops the LabPad®,
a next-generation mobile point-of-care (POC) device. Avalun targets
the multi-billion-euro global market of mobile biology devices that allow
monitoring patients at home or during an emergency situation away from
a healthcare facility.
Using the same imaging components as a smartphone to create a fully
integrated miniature microscope, LabPad® is a minilab that can perform
many tests on the same device, such as blood coagulation, glucose
or cholesterol. A patient just needs to insert the appropriate microcuvette in the device, draw a droplet of blood from his finger and deposit
it on the micro-cuvette.
Designed for e-health applications, LabPad® also is a communication
device that strengthens the link between patients and healthcare
professionals.
LabPad technology was developed in Leti’s Department of Microtechnology
for Biology and Health (DTBS), at the boundary between physics, instrumentation, microfluidics, and biochemistry.
See Award and Honors, page 33.
Startups
of the year
health
LabPad®
CEA-Leti/SPICE
©
38
39
Leti Activity Report > 2013
telecommunications
ISKN:
experience your digital world
Jean-Luc Vallejo
[email protected]
www.isketchnote.com/
ISKN, the first Leti startup to use crowdfunding, launched its smart
cover for iPad with iSketchnote App in a Kickstarter program in the fall.
The initial goal of $35,000 was reached in less than 14 hours, and altogether the company raised $346,127 from 2,395 global backers.
ISKN’s technology is based on Leti’s expertise in field magnetometry
and signal processing, especially developments in motion 3D controllers.
ISKN Slate is an innovative, perceptive surface that combines the
natural experience of familiar tools with the power of digital technology.
The first application, iSketchnote App, allows users to digitize their
sketches and notes in real time, and keep a hard copy for their files.
The patented technology will be integrated into many new devices and
used for multiple applications and markets, such as 3D animation and
gaming.
Startups in incubation
Startups in incubation
Startups of the year
silicon components
Frédéric Dupont
[email protected]
Power semiconductors with GaN
materials from Soitec
Exagan is developing power semiconductor transistors based on gallium
nitride (GaN) materials from Soitec. They will be used to make a highly
efficient electrical conversion system (AC/DC, DC/DC, DC/AC) for solar
panel inverters, automotive electronics, power supplies, and industrial
applications.
This GaN high-electron-mobility transistor (HEMT) technology is a
disruption of existing silicon transistor technologies, because it enables
higher-frequency system operation for high-voltage (600-1,200V) and
high-current (10-100A) regimes.
In addition to transferring Soitec’s technology in 200mm on Leti’s epitaxy reactor, the collaboration demonstrated the first GaN-based, 600V
transistors at 200mm.
Leti is finalizing development of the transistor process and a first design
will be industrialized by Exagan starting in 2014.
A common lab will be established to develop new and innovative transistor designs, as well as acquire fundamental knowledge of this new
material physics and master the physical mechanisms for high levels of
reliability.
ISKN will deliver its first smart cover for iPad with ISKN Slate and
iSketchnote App this summer and prepare the next step with impressive
3D features.
The thinness of the ISKN Slate,
the first product of the startup ISKN
ISKN
©
Exagan HEMT technology
Exagan
©
200mm GaN on silicon
processed wafer using
CMOS compatible
fabrication f low
Exagan
©
40
41
Leti Activity Report > 2013
[email protected]
Nanoelectronic
and micro-nano
systems
CEA-Leti / G. Cottet
©
Leti’s mission:
This platform bridges the gap
between upstream R&D and
new micro- and nanotechnology applications to optimize
device performance, and power
cons ump tion , an d de velo p
fabrication processes that are
transferable to partner sites.
Create and transfer innovation
to our partners
Leti is a leading global provider
of these services, which target
smart objects, energy & environment, transport, biology &
health, security, and space &
defense.
Whether you are a large company, an SME or a startup looking for
new markets or a more competitive position, Leti helps you get there.
The Silicon Technologies Division includes the nanotech
plat form , wh ich prov ides
200 mm and 300 mm CMO S
wafer processing for both semi-
Solution provider
We help you find the best solution
to your request through:
• R&D projects (from six months to three years)
• Fea sibi lity stud ies on the
opportunity to integrate micro and nanotechnologies in your
products
• Tran sfer ring prot otyp es to
production lines
• Specific services based on high performance equipment
A dedicated team
Leti’s team (business managers,
engineers and researchers) will apply their dedication and expertise
to your project.
conductor and microsystem
devices, and the MEMS200
platform, which produces nonCMOS components. The Silicon
Components Division carries
out research on nanoelectronics and heterogeneous integration on silicon.
Among the many achievements
in 2013 were making 28nm planar UTBB FD-SOI technology
availability for production at
ST-Crolles, and a world record
for the conversion of sunlight
into electricity using a new
solar cell structure with four
solar subcells with Soitec,
the Fraunhofer ISE and the
Helmholtz Center Berlin.
State-of-the-art
facilities
Leti’s
offer
Leti’s offer
s
Nanoelectronics and micro-nanosystem
A unique infrastructure gathering
ten technology areas on a single
site en able s re sear cher s an d
companies to experiment, test and
validate new ideas to make them a
reality.
• Integrated circuit design and
embedded systems
• Nan oele ctro nics and micr onanosystems
• Photonics
• Nanocharacterization
• Clinatec
• Nano biotechnologies
• Sen sor netw orks and sma rt
©
CEA-Leti
objects
• Cyber security
• Development and prototyping
for SME s a nd inte grat ive
companies
• Experimentation through usages
42
43
Leti Activity Report > 2013
Leti’s offer
Nanocharacterization
Photonics
One-stop shop
for photonics
The photonics platform combines Leti strengths in design,
production, and characterization of photonics components
for imaging (visible and IR cameras), and other applications like
miniature displays for near-toeye applications, optical sensors for gas detection, silicon
photonics for fast optical communications, and LED lighting.
The goal is a one-stop shop
covering the entire product-development chain, from material
development to system evaluation, and from design to the
characterization of photonic
components. Co-located with
other Leti platforms, including
[email protected]
those dedicated to embedded
syst ems int egra tion an d
micro- and nanoelectronics, the
photonics platform utilizes a
variety of technologies. These
include crystal growth (solid
and epitaxial) of compound
semiconductor (III-V, II-VI),
silicon microelectronics frontend fabrication, electro-optical
and mechanical packaging and,
at each step, partial and global
characterization.
Physical
and chemical
characterization
PFNC, CEA Grenoble’s nanocharacterization platform, is
unique in Europe because of the
range of expertise and leadingedge systems it concentrates
in one location. Drawing from
talent and tools at Leti, Liten
and Inac, the platform’s competence centers include ionbeam analysis, X-ray analysis,
electron microscopy, scanning
probe microscopy, surface analysis, optical characterization,
NMR techniques, and sample
preparation.
Platform highlights in 2013
include development of a new
MCT-based (HgCdTe) infrared
camera prototype with a pitch
array as low as 10 micrometers.
[email protected]
PFNC achieves state-of-the-art
physical/chemical/structural
characterization of materials
and devices due to the synergy
between these centers, the
presence of the 300mm silicon
technology platform, and the
proximity to the ESRF (European Synchrotron Radiation
Facility) and the ILL (Institut
Laue-Langevin).
In 2013, the platform installed
new tools enabling 3D characterization, such as plasma FIB
and tomography in SEM, and
a ToF-SIMS with Argon cluster to meet characterization
challenges of new materials for
organic electronics and energy
applications.
LED spot lamp.
©
IR image (1024x768 HgCdTe) with a
44
10µm pitch.
©
CEA-Leti
CEA-Leti
ToF-SIMS cluster Argon.
©
CEA-Leti
45
Leti Activity Report > 2013
Leti’s offer
Nanobiotechnologies
Clinatec
[email protected]
Clinatec platform
A cross-disciplinary
biomedical research center
The Clinatec biomedical research center, which opened
in September 2012, is unique
in the world. From doctors and
surgeons to biologists and engineers, Clinatec brings together
all of the necessary know-how
for innovation in micro and
nanosystems for healthcare.
The platform possesses advanc ed i mag ing equi pme nt
and molecular, behavioral, and
electrophysiological observation capabilities, as well as a
preclinical unit, an operating
room, and six patient beds.
Clinatec’s mission is to speed
proof-of-concept for new testing, diagnostic, and treatment
methods and promote the
emergence of novel solutions
by bringing together a range of
disciplines.
Clinatec also leverages the full
potential of Grenoble’s hightech ecosystem, looking at
way to integrate MEMS, NEMS,
nanomaterials, and IR, X-ray, and
terahertz imaging techniques
into the solutions it develops.
Current research projects focus
on implantable neurostimulation devices and biomarkers
for brain cancer, Parkinson and
Alzheimer disease.
Researchers from other disciplines can also come to Clinatec
to work on their own projects,
as well as R&D professionals
from biomedical equipment
manufacturers.
A broad spectrum
of biotech
application s
The 5,5002 sq. m nanobiotechnology platform houses all of
the know-how required to develop innovative medical systems,
with surface and sample preparation, biology, substrate functionalization, packaging, microfluids, microsystems, biological
detection systems, and component-reading capabilities. The
R&D carried out on the platform
benefits researchers, hospitals,
and biomedical firms.
The innovative imaging solutions developed cover X-ray,
gamma-ray, fluorescence, visible, and lensless techniques
with a broad range of applications, from observing large sur-
faces to examining tissue, particles, cells, and bacteria. The
platform’s embedded and implantable in vivo microsystems
respond to the new challenges
of personalized medicine, nanomedicine, and point-of-care diagnostics. The platform is located near Clinatec. It is also near
and works closely with iRTSV,
further developing the basic research results produced by this
life sciences research and technology center. The platform files
some 35 patent applications
per year, including those under
joint R&D projects with around
30 industrial partners.
©
©
46
[email protected]
CEA-Leti / G. Cottet
CEA-Leti / P. Avavian
47
Leti Activity Report > 2013
Leti’s offer
Development and prototyping for SMEs
and integrative companies
Cyber security
Cyber security
assessment and
improvement
Leti’s cyber-security platform
is aimed at meeting the many
growing security challenges
that come with global interconnectedness. New e-health applications, sophisticated industrial (SCADA) systems and the
Internet of Things, to cite a few
examples, will require increasingly robust security systems.
By p rovi ding sta te-o f-th eart testing of products such
as smartcards and e-identity
devices and, on a larger scale,
communicating systems, Leti’s
cyber-security platform can
assess and certify the security
level offered by those products.
Besides certification, the plat-
[email protected]
form is focused on improving
the security of objects and systems, including characterizing
embedded countermeasures
and implementing innovative
solutions. Specific attention
is paid to systems and objects
that would be vulnerable if an
attacker had access to a secured device.
In 2013, the platform’s team
improved test benches for
assessing attacks on integrated circuits, and demonstrated
electromagnetic-based fault
injection on real products. In addition, test benches and evaluation capabilities were developed
for automotive components.
[email protected]
Integ rating IT
functionalit y in
traditional industries
The development and prototyping platform helps SMEs in
traditional industry sectors
like glass, concrete, and textile
paper improve their products
and develop competitive advantages by integrating sensors
and communication systems.
The platform makes available
to customers all the technologies developed at Leti or CEA
that are relevant to IT products,
including smart sensors, wired
or wireless networks, actuators, and man-machine interfaces. The platform staff of 30
engineers and technicians also
provides a range of services
from product analysis to advice
about innovative, user- and
environment-friendly functions
to implement, as well as tuning
proof-of-concept demonstrators for full testing and usage
validation.
Companies may improve their
products by adding up-to-date
green communication systems,
including efficient antennas,
dedicated RFID tags, and miniaturized sensors. The platform
then tests the products on
functional demonstrators in
a lab setting that reproduces
eith er a n u rban ne ighb orhood with facades, parking,
sidewalks, intersections, and
shops, or indoor environments,
such as homes or offices.
The Leti team also helps customers choose providers to
industrialize their products, and
file patent applications to protect their product innovations.
in Leti’s ITSEF.
Penetration testing on laser testbench ©CEA-Leti / G. Cottet
onent.
Security testing on automotive comp©CEA-Leti
IT technology for the space
industry (NovaNano).
©
48
CEA-Leti
49
Leti Activity Report > 2013
Leti’s offer
systems
Integrated circuit design and embedded
Sensor networks and smart objects
Integ rating
emerg ing
technolog ies in
complex systems
Manufacturers and SMEs from
virtually all industry sectors engage with the Sensor Networks
Platform to equip their products
with innovative features based
on emerging technologies that
can be integrated in complex
systems. The platform, which
supports many Internet of
Things applications, covers
the entire development cycle,
from idea to industrialization,
offering a multidisciplinary approach that has no equivalent
in France.
Applications that the platform
supported in 2013 include securization schemes of the sensor
network developped by Univer-
sity of Cantabria in Santander,
Spain; the magnetometers array
for the Swarm space mission,
location sensors in buried tubes,
a window shutter that is 100
percent powered by solar energy, and a network of sensors to
monitor the energy performance
of a PVC pipe.
The state-of-the-art technology platform offers very
advanced and highly efficient
radio communications, such as
pulse-based ultra-wideband. It
thus develops miniaturized and
low energy-consuming functions such as detection, metrology, monitoring, localization, tracking, and traceability.
[email protected]
ww w.smartsantander.eu
Uniq ue in Europe
Integrated embedded systems
are comprised of multiple functions squeezed into a single die,
e.g. energy scavenging, sensing
and/or imaging, highly efficient
digital processing, wireless
communication, reliability, and
security.
To efficiently serve the market for these complex and critical functions, the Design &
Embedded Systems Platform
covers the entire embedded
systems design flow (front-end
and back-end design), as well as
test and characterization. This
allows clients to interact with
a single partner for the whole
chain of competencies needed
to develop a smart, integrated
embedded system.
[email protected]
This organization avoids traditional know-how partitioning,
and ensures development of
optimized and innovative solutions. Moreover, the platform
allows efficient management
of coupling between highly advanced hardware and software.
In addition to offering a wide
range of competencies required
to design embedded systems,
the platform is built on stateof-the-art equipment. It is the
only applied research center
in Europe providing customers
with access to a hardware emulation system.
nder, Spain.
Sensor network in Santa
©
ria
University of Cantab
e.
rm: a unique facilit y in Europ
©
Desig n & Embedded Systems Platfo
CEA-Leti
50
51
Leti Activity Report > 2013
[email protected]
Ex perimentation
through use
Open innovation by usage
emerged from the observation that it is rare for any one
organization to possess all the
skills required to address the
complex problems encountered
in fields such as the environment, energy, health, or transportation.
It is in this respect that open
innovation by usage, based
on exchanging and sharing
knowledge among people from
different backgrounds, proves
particularly useful.
Bringing together specialists
from diverse fields helps to
grasp and deal with multifaceted topics. During times of
economic crisis, it works to
pool resources and ideas to
both cut costs and improve
efficiency.
Drawing on this constructive
competition and related ideas,
open inn ovat ion by u sage
works towards achieving Leti’s
goals for innovation by:
searching for new applications suited to technology
transfer
predicting, experimenting
with and testing future uses
and practices ahead of technology development, and
considering issues from the
joint perspective of business
units and partners.
This success has led to support
for the creation of the Open Innovation Center on Grenoble’s
scientific peninsula.
Leti through
Carnot Institute
Europe
US
Japan
Find out more about the year’s
achievements and key events
by visiting the “Open Innovation” Activity Report on the
Leti website.
©
52
Leti’s offer
Leti’s offer
Experimentation through use
CEA /Open innovation in practice
53
Leti Activity Report > 2013
Leti’s offer
Contributing
to preparation
of EU Research
and Innovation
prog ramme
Horizon 2020
Rendez-vous Carnot business convention.
CEA-Leti
©
CEA-Leti is one of the 34 French
Carnot research institutes. The
Carnot label was created in 2006
to recognize and support French
public research institutes that
contribute significantly to the
business community.
Research that contributes
to the development
of innovative services
and products in enterprises,
creating wealth and
employment in France
and Europe.
* (healthcare, information technologies, micro and nanotechnologies, materials
and manufacturing processes, transportation, construction, energy and chemistry)
54
Carnot institutes improve the
competitiveness and growth of
their business partners by creating
innovation and transferring it to
industry.
Their main mission is to increase
industrial leadership and employment in France and Europe.
Together, the 34 Carnot institutes
represent 15% of France’s public
research workforce and carry out
50% of all public R&D contracts
financed by industry.
They cover a very wide range of
fields* serving all the major business sectors. Their industrial partners include large corporations,
medium-sized companies, SMEs,
very small enterprises employing
less than 10 people, and start-up
companies.
The Carnot institutes share a
common charter of professional standards and are capable of
championing them individually and
collectively. The Association des
instituts Carnot or AiCarnot coordinates the Carnot network. Committed to developing research partnerships to best serve industry, the
Carnot institutes can mobilize the
skills and state-of-the-art techno-
logical platforms of the network to
meet their clients’ needs. The Carnot institutes also collaborate with
their European and global counterparts such as the Fraunhofer institutes, TNO, VTT, CSEM, MIT…
Carnot institutes conduct
upstream research to maintain
their scientific and technological
excellence and leadership. A total
of 60 M€ of French state funding
is allocated each year to help the
Carnot institutes invest in research
projects whose aim is to anticipate
future technological needs in their
core subjects. These projects are
carried out with top-notch academic partners world-wide. The resulting patented inventions become
innovative technological solutions
through co-development with
industrial partners. Look for the
Carnot symbol in this document to
identify some of CEA-Leti’s many
key results made possible thanks
to Carnot funding.
Leti was a key player in the FP7
European framework, participating in more than 140 collaborative projects. As a consequence,
CEA Tech and Leti have played
an important role in the structuring bodies in charge of preparing the new H2020 framework.
For example, since 2010 CEA
Tech has chaired the High Level
Group on Key Enabling Technologies (KETs) in charge of
producing recommendations to
strengthen Europe’s capacity
for industrial innovation and the
development of new products
and services needed to deliver
smart, sustainable, and inclusive European growth.
Moreover, through the ENIAC
public-private nanoelectronics
partnership, Leti has contributed to the preparation of a Joint
Technology Initiative bringing
together the EU and member
states in Electronic Components & Systems (ECSEL); the
new ENIAC project, PLACES2BE,
is a good example of the implementation of the KETs strategy
in nanoelectronics.
[email protected]
In the health domain, Leti is
chairing the European Technology Platform on Nanomedicine.
As for communication networks
and services, Leti is a member
of the steering board of the new
European Technology Platform
NetWorld2020.
Leti has also actively contributed to the H2020 roadmap on
high performance computing
through the HiPEAC Network of
Excellence.
Leti also is member of the stakeholder group of the Photonics21
European Technology Platform.
All these frameworks are gathering stakeholders in their
respective domains and are
excellent places to contribute
efficiently to future relevant
project proposals perfectly in
line with the European Commission strategy in H2020.
To find out more about the Carnot
institutes, look us up at http://
www.instituts-carnot.eu/ or join
us at the next Rendez-vous Carnot
business convention in Lyon (October 8 and 9, 2014).
In 2013, Leti’s director Laurent
Malier was elected president of the
AiCarnot.
55
Leti Activity Report > 2013
Leti’s offer
Increasing
oppor tunities
in the US
In 2013, the US office pursued an
active policy of brand development through the participation
trade shows, workshops and
the organization of special Leti
events during key conferences
such as SEMICON West and
IEDM.
Leti is now clearly identified as
a provider of key technologies
for US research teams and our
image benefits from the innovative Grenoble environment and
from a large panel of partnerships that provide various paths
to manufacturing.
The partnership with Caltech
is expanding with new projects
discussed and launched in the
field of assembly technologies
for NEUROPROBES with Prof.
Michael Roukes, as well as the
integration of low-power electronic ICs with photonic devices
for Prof. Azita Emami.
As far as industrial partnerships
are concerned, the actions with
HP in the field of silicon photonics are expanding and new projects have been launched with
Intel for the development of
disruptive RF Components, and
with Qualcomm for the development of Leti’s 3D monolithic
integration technology.
Some of these actions are
carried out in partnership with
AEPI (Grenoble-area development agency) and Invest In
France Agency.
US
Hughes Metras, Leti representative in the
[email protected]
Increasing
oppor tunities
in Japan
Bruno Paing, Leti representative in Japan
[email protected]
an
Yann Gallais, deputy representative in Jap
[email protected]
positioned on consumer markets, such as OMRON in 2013.
Furthermore, Leti’s expertise
and unique research infrastructure on nanocharacterization led
to a partnership with one of the
largest automotive corporation
in Japan.
During the past decade, Leti
dramatically increased its interactions with Japanese companies. After a few years focusing
on microelectronics-related topics to develop collaborations,
Leti is currently expanding the
scope of possible topic collaborations with Japanese industry.
Indeed, the first agreements
were signed a few years ago
with companies such as TEL,
Sokudo, TOK, JSR, Nissan Chemicals through Leti’s affiliate
programs « Ideal » (on direct
self assembly) and « Imagine »
(on maskless lithography). Leti
has also developed a network of
partners with equipment manufacturers (Sokudo, Yushin…)
and materials suppliers (Mitsubishi Materials Corporation),
and at the same time started
collaborations with companies
Every year since 2005, Leti has
held LetiDay Tokyo in October,
which gathers around 10 experts
and top managers from Leti to
give exclusive insight about
Leti’s latest technology developments to an audience of
200+ Japanese industrial participants. LetiDay Tokyo has
become a major event through
the years and now enables
Leti to strengthen its industrial network and initiate new
collaborations with Japanese
industry every year.
Leti Day @SEMICON West 2013.
©
CEA-Leti
.
Sekig uchi-san at LetiDay 2013 in Japan
©
56
CEA-Leti
57
Leti Activity Report > 2013
More than 40 years of history
f
o
s
©
CEA-Leti
n
a
h
t
e
r
Mo
1967
eti
creation of L
1972
specialist
Efcis spin off production
nd
for on-dema
uits
of MOS circ
ST in 1992)
(to become
1986
ated,
Sofradir cre
Leti
a spin-off of
1983
lerometer
silicon acce
patented
1987
nology
sensor tech
to Terraillon
transferred
1999
nsistor
1st 20nm tra eti
yL
produced b
2009
Alliance
IBM CMOS
2012
&
creation
natec
li
C
f
o
h
c
n
u
la
of APIX,
1st startup
2010
te
le
p
m
o
c
a
Leti/Caltech
opening of
d
te
a
ic
d
de
300mm fab n
tio
ra
2008
to 3D integ
e
c
n
Caltech Allia
2006
of Minatec
inaug uration
Campus
&
new 200mm
opening of a
d to MEMS
line dedicate
2002
yrometer
first silicon g ped and
lop
MEMS deve
transferred
wafers
on 200mm
2011
n
opening of a
innovative
nromm
moving clea
k
system to lin
platforms
2013
Leti-UTSOI
del
compact mo
created
History
1963
tegrated
first french in d by the
uce
circuit prod
CENG
section”
“electronics
1976
scanner
first French X uilt at Leti
nd b
desig ned a
1992
Soitec
created,
startup
of Leti
r
a
e
y
40
y
r
o
t
s
i
h
CEA-Leti / G. Cottet
©
58
59
Leti Activity Report > 2013
General Organization
Jean-René Lequepeys
Fabrice Geiger
Silicon Components Division
Silicon Technologies Division
Characterization:
Power electronics:
Daniel Vellou
Micro Technologies for Biology
and Healthcare Division
N. Gambacorti
[email protected]
Lithography:
Other Processes and Advanced Materials:
E. Gouze
[email protected]
LETI-3S:
S. Locatelli
[email protected]
S.Van
[email protected]
3D IC integration:
P. Leduc
[email protected]
Environment Monitoring:
Embedded Micro Batteries:
P. Pantigny
[email protected]
Sensors:
P. Boisseau
[email protected]
Roland Blanpain
Systems and Solutions
Integration Division
Wireless communications:
L. Rudant
[email protected]
Security & Defence:
J.-P. Polizzi
[email protected]
Systems for Process
Monitoring:
Passives & Interposers:
Y. Lamy
[email protected]
Cl. Vauchier
[email protected]
Techno design:
In vitro Diagnostic:
Chr. Raynaud
[email protected]
A. Thermet
[email protected]
Medical Imaging:
Fr. Glasser
[email protected]
A. Merle
[email protected]
Thierry Collette
Embedded sensors and
functionalization - Complexs systems:
Architecture, IC Design
and Embedded Software Division
A. Paleologue
[email protected]
Digital processing systems
& embedded software:
P.Grève
Sensor systems – Energy:
J.-M. Leger
[email protected]
[email protected]
SME:
Analog, Imaging & wireless IC:
M. Durr
Céline Soubeyrat
[email protected]
[email protected]
Embedded systems:
B. Lucas-Leclin
Claude Massit
[email protected]
VP Programs and Strategic Planning:
Eric Dupont-Nivet
[email protected]
Smart Sensors IC design:
C. Condemine
[email protected]
François Berger
P. Rematier
[email protected]
VP European Partnerships:
Laurent Herault
[email protected]
VP Industrial Partnerships: Wellness:
C. Gallis
[email protected]
Transport and Mobility
V. Roger
[email protected]
Internet of Things
J.-M. Goiran
[email protected]
Bruno Mourey
Optics and Photonics Division
Integrated photonics on silicon:
Visible optical imaging:
New technologies for lighting:
Bolometrers infrared
& THz imaging:
S. Menezo
[email protected]
P. Mottier
[email protected]
Display and optical sensors:
S. Joly
[email protected]
A. Rochas
[email protected]
General
organization
Clinical Medical Devices
& Neurosurgery:
Olivier Peyret
[email protected]
60
[email protected]
Clinatec
VP Scientific Affairs:
Pierre-Damien Berger
[email protected]
C. Reita
[email protected]
Nanomedecine:
J.-Fr. Teissier
[email protected]
VP Operational:
Advanced microelectronics:
Medical Devices:
S. Tedesco
[email protected]
DIRECTOR
Laurent Malier
J.-J. Aubert
[email protected]
Fr. Simoens
[email protected]
Cooled infrared
imaging detectors:
G. Destefanis
[email protected]
61
Leti Activity Report > 2013
Activity
Report
2013
Publisher:
Laurent Malier.
Editorial design:
Hélène Vatouyas, Pierre-Damien Berger, Olivier Peyret, Eric Dupont-Nivet.
Coordination within Leti and implementation:
Hélène Vatouyas.
Editorial team:
Jean-Baptiste David, Jean Marty, Denis Renaud, Jean-François Teissier,
Raymond Campagnolo, André Rouzaud, François Vacherand.
Written and edited by:
Mahoney & Lyle Communication.
Graphical layout:
Valérie Lassablière, ça crée val.
Thanks to all our partners who contributed to this report.
> We invite you to discover the Leti’s Research Reports 2013
and the books written by Leti researchers:
Research Reports 2013: http://www.leti-cea.fr/en/Discover-Leti/Documents3
Books: http://www-leti.cea.fr/en/Discover-Leti/Books
Laboratoire d’Electronique
et de Technologie de l’Information
MINATEC Campus
Centre de Grenoble
17, rue des Martyrs
F-38054 GRENOBLE Cedex 9
[email protected]
www.leti.fr
Cover: ©CEA/Leti