Innovative E-Beam Applications for Advanced

Transcription

SEMATECH Symposium Taiwan 2012
Innovative E-Beam Applications for
Advanced Technology Nano-defect Era
Ray Li
Senior Manager
Technical Marketing
Hermes Microvision Inc.
October 18th, 2012
Toward Yield Excellence
© Hermes Microvision Inc. All rights reserved. Proprietary and Confidential.
P.1
漢民微測
Outline
○ Fundamental Application of E-Beam Wafer Inspection
○ Innovative Application of E-Beam Inspection
- Combination of CDU Measurement and Defect Detection
- Die-to-database Inspection
- EUV Mask Pattern Inspection
- Potential Application for TSV
○ EBI’s Future Technology
P.2
漢民微測
Outline
P.3
漢民微測
Fundamental Application of E-Beam Wafer Inspection
VC (Voltage Contrast) Defect : Electrical related
Physical Defect : Pattern or material related
…
BEOL
…
MOL
…
FEOL
Defect detection with die-to-die / cell-to-cell comparison
What E-beam can do more?
P.4
漢民微測
Potential Application for E-Beam
CD SEM
CDU
OPC
Verification
OVL
Monitor
ADC
Defect
Inspection
Optical
InspectionPWQ
E-Beam
VC Defect
Physical Defect
Hotspot
Inspection
Auto
Review
Edge Die
Monitor
Review
SEM
P.5
漢民微測
Outline
P.6
漢民微測
Outline
P.7
漢民微測
Combination of CDU Measurement and Defect Detection
Small physical defects sometimes show dependence on
the CD of some important structures. (C. Boye et al, ASMC 2012)
(a). # of Epi-grow Defect vs.
Normalized Thickness of Spacer (SRAM)
# of Epi-Grow Defect (log10)
1000
100
10
1
0.50
0.60
0.70
0.80
0.90
1.00
1.10
Normalized Thickness of Spacer
CDU (spacer THK)
Contour map
E-beam
Inspection
Reverse
dependency
observed
Defect
Inspection
Defect count
Contour map
CDU
Measurement
Value added application !
P.8
漢民微測
Outline
P.9
漢民微測
Die-to-database (Comparison of Wafer and Design Data)
Inspection Methodology (O. Patterson et al, SPIE 2012)
For Pattern Fidelity Evaluation
Data collection process
Defect deposition process
SupernovaTM + EBI
D2DB E-beam Inspection
SupernovaTM defect analysis
• Multi-layer GDS D2DB inspection
• Defect list with images
• Defect binning by pattern
• Defect binning by severity
• Defect maps output
P.10
漢民微測
Application 1: M2 Liner
(O. Patterson et al, SPIE 2012)
•
•
•
•
Short loop PWC wafer.
Inspected after liner/seed, to capture fill issues.
Hot spot scan found both shorts and opens.
Inspect after Cu CMP to best capture shorts.
killer
maybe killer
Lines have pinched off
with liner and seed. The
copper plating will be
blocked resulting in a
void.
Defect count by die for
type 1 (killer) and type 2
(maybe killer) defects.
Modulated die are in
boxes.
P.11
漢民微測
Application 2: Via Etch
(O. Patterson et al, SPIE 2012)
• Short loop modulated wafer inspected. (1 cm2 of a die at the
edge of the process window)
• The wafer was coated with liner to keep it from charging.
• 100s of assist features were detected.
• A hot spot inspection was used to validate new masks with
updated OPC.
Defect map for
scanned chip
Map showing the
location of printing
assist features on
the reticle field
Early detection of these type failures can save months
off the ramp of a new product !
P.12
漢民微測
Outline
P.13
漢民微測
EUV Mask Pattern Inspection
(T. Shimomura et al, SPIE 2012)
4 types of program defect for evaluation
No defect produced
16nm defect detected
E-beam inspection system has 16nm edge defect detection
sensitivity on 64nm HP EUV mask.
P.14
漢民微測
Inspectability of 64nm HP pattern
• Throughput
1250um x 1250um
6 min 46 sec
10cm x 10cm
31 days
• Need further improvement of patterning process for 64nm HP EUV mask.
• Need various technology to improve throughput, e.g. Lightning ScanTM
P.15
漢民微測
Investigation of bump type defects creation
No significant increase of defects
after combination of e-beam
bombardment and cleanings.
Summary of 16nm HP EUV masks evaluation :
1. EBI system has capability to capture 16nm edge defects on 64nm
EUV mask.
2. No significant damage to susceptible Ru capped Mo/Si multilayer.
Note from HMI :
E-beam inspection (DD/D2DB) technology for EUV pattern mask and
NIL template is under evaluation. So far no sensitivity concern,
throughput new technology is parallel developing.
P.16
漢民微測
Outline
P.17
漢民微測
Potential TSV Application by E-beam Inspection
• TSV Open/Leakage detection by VC
• Thin Dielectric Film Remains by Gray Level Comparison
e
Leakage
Isolation
Liner
Residue
Oxide Remain
at bottom of
etched hole
TSV Open
Glass Carrier wafer
Feasibility study is under way !
P.18
漢民微測
Outline
P.19
漢民微測
EBI’s Future Technology
Future
Technology
Projection
eBeam
Multiple
eBeam
Multi-column
Multi-objective
lens
Multi-column
Single objective
lens
Pros
High scan rate
With-in full die
application
Easy control
symmetry beam
Small volume
Cons
Interaction
high, low SNR,
low resolution
Asymmetrical
control,
non-uniform
Large volume
Asymmetrical
control
Resolution
Moderate
Moderate
High
High
Throughput
Fastest
Faster
Fast
Faster
HMI is working on multi-axis technology for future need !
P.20
漢民微測
Thank you for the attention
P.21
漢民微測

Innovative E-Beam Applications for Advanced

Transcription

Similar documents

W AD00 A1 2000 0146 EN