University of Minnesota
Transcription
University of Minnesota
Wednesday Conference Session 4 Intermag/MMM/TMRC Conference-Related Highlights Will the Numbers Add Up for Sub 7 nm Magnetic Spacings? C. Mathew Mate, Qing Dai, Robert N. Payne, Bernhard E. Knigge, and Peter Baumgart Hitachi Global Storage Technologies Hitachi San Jose Research Center San Jose, California USA © 2005 Hitachi Global Storage Technologies © 2005 Hitachi Global Storage Technologies C.M. Mate et al., Hitachi San Jose Research Center Head-Media Spacing How Low Can We Go? • Magnetic Spacing = Distance from top of media to bottom of head sensor – As bit density goes up, magnetic spacing must go down Total Magnetic Spacing (nm) 140 120 100 80 ca. 1995 Historic Trend for HDD Products: Magnetic Head Sensors Spacing ~ 1 / (linear density) Trailing Edge of Slider Magnetic Spacing Magnetic Medium 60 2003 40 20 0 100 ~100 Gb/in2 ~200 Gb/in2 ( ~ 5-7 nm for 1 Tb/in2 ) 250 400 550 700 850 1000 Linear Bit Density (kilobits per inch = kbpi) © 2005 Hitachi Global Storage Technologies C.M. Mate et al., Hitachi San Jose Research Center Contributors to the Magnetic Spacing (Magnetic Spacing = Distance from top of media to bottom of head sensor) Magnetic Head Sensors Trailing Edge of Slider Head Overcoat Clearance • Static Contributors: – Sensor recession – Head overcoat – Lubricant or – – – – contamination on head Clearance Disk lubricant Disk overcoat Take-off height © 2005 Hitachi Global Storage Technologies For current drives – ~ 100 Gb/in2 Areal Density – magnetic spacing ~ 16 nm • For 1 Tb/in2 Areal Density – magnetic spacing < 7 nm Sensor Recession Magnetic Spacing Lubricant Disk Overcoat Magnetic Medium Underlayer Disk Substrate • Current Values (approx.) 1 nm 3 nm 1 nm 3 nm 1 nm Dynamic and tolerance contributors 4 nm hidden in these values 3 nm 16 nm total magnetic spacing C.M. Mate et al., Hitachi San Jose Research Center Overcoat Thickness Limit • 10 Å probably represents the thinnest achievable overcoat thickness with good corrosion protection – Demonstrated: Silicon Nitride • B.K. Yen et al., J. Appl. Phys. 93 (2003) 8704 – Proposed: Filtered-Cathodic-arc or Ion-Beam-Deposited (IBD) carbon • J. Gui, IEEE Trans. Magn. 39 (2003) 716 30 COUNTS (A. U.) a-SiNx Co oxide Co metal (b) a-CNx Co oxide COVERAGE THICKNESS (Å) (a) Co metal 0Å 5Å 10 Å 15 Å 0Å 11 Å 15 Å 23 Å BINDING ENERGY (eV) ESCA Co2p core level spectra of coated CoCrPt disks -Coverage limit for a-SiNx is ~10 Å -Coverage limit for Technologies a-CNx is ~20 © 2005 Hitachi Global Storage 25 20 sputtered a-SiNx 15 10 Denser films lead to better coverage at lower thickness. sputtered a-CNx IBD a-C:H 5 0 786 784 782 780 778 776 774 786 784 782 780 778 776 774 BINDING ENERGY (eV) simulation, k = 2 simulation, k = 3 simulation, k = 4 simulation, k = 5 XPS experiments Å 50 60 70 80 90 100 RELATIVE DENSITY (% THEO. DENSITY) Yen, White, Waltman, Mate, Sonobe, Marchon, J. Appl. Phys. 93 (2003) 8704 C.M. Mate et al., Hitachi San Jose Research Center Lubricant Thickness Limit • Head-disk interfaces quickly fail when – average lubricant thickness < lubricant chain diameter (6 Å). 100 After 60 day flyability test % Fly Hieght Loss 90 80 A fly height loss > 10 % indicates a failing headhead-disk interface. 70 60 50 40 30 20 10 0 0 1 2 3 4 5 6 7 8 9 10 11 12 Final Lubricant Thickness (Å) C.M. Mate et al., American Physical Society Meeting, 3/22/00 © 2005 Hitachi Global Storage Technologies C.M. Mate et al., Hitachi San Jose Research Center Limit on Clearance from Lubricant Roughness Slider 14 z (nm) Zdol capillary wave roughness Air 0 density Zdol ave. thickness Zdol .001 .01 Air .1 1 (gm/cm3) 10 Disk • Air gap clearance limited by thermally excited capillary waves at • lubricant-air interfaces. – Mate, Toney, Leach, IEEE Trans. Magn. 37 (2001) 1821 For a 6Å monolayer of bonded lubricant: Clearance limit ~ 1 nm. © 2005 Hitachi Global Storage Technologies C.M. Mate et al., Hitachi San Jose Research Center Disk Roughness • Measurement technique depends on lateral length scale – < 10 µm (micro-roughness) AFM Image µm 1 • XRR (0.1 nm – 2 µm), AFM (10 nm – 10 µm) – 10 µm – slider length (micro-waviness) • Laser interferometer, LDV ~ 2nm • Take-off height (TOH) or glide avalanche – Smallest physical spacing before head-disk contact • Static contributors: – Intrinsic disk and slider roughness • Dynamic contributors: – Influence of roughness on flying dynamics – Influence of flying dynamics on lubricant roughness – Flying instabilities due to attractive forces between slider and disk Need to understand better how to measure TOH and what limits TOH. Educated guess for smallest achievable TOH: 2 nm © 2005 Hitachi Global Storage Technologies C.M. Mate et al., Hitachi San Jose Research Center Smallest Achievable Magnetic Spacing 1. Evolution of Current Head-Disk Interface • Assumption: – Current static contributors to spacing evolve to their fundamental limits. Sensor recession Head overcoat Lubricant or contamination on head Clearance (capillary wave limit) Disk lubricant Disk overcoat Take-off height Smallest spacing 0 nm 1.0 0.6 1.0 0.6 1.0 2.0 6.2 nm Magnetic Head Sensors Trailing Edge of Slider Head Overcoat Sensor Recession Magnetic Spacing Lubricant Disk Overcoat Magnetic Medium Underlayer Disk Substrate Clearance Sub 7 nm magnetic spacing achievable if dynamic contributors to magnetic spacing and tolerances < 0.8 nm. © 2005 Hitachi Global Storage Technologies C.M. Mate et al., Hitachi San Jose Research Center Smallest Achievable Magnetic Spacing 2. Wear-in-Pad Concept • Assumptions: – Use a burnishing process to remove sensor recession, head overcoat, and flying height tolerances – Remaining static contributors evolve to fundamental limits Sensor recession Head overcoat Lubricant or contamination on head Clearance (capillary wave limit) Disk lubricant Disk overcoat Take-off height Smallest spacing 0 nm 0 0.6 1.0 0.6 1.0 2.0 5.2 nm Magnetic Head Sensors Magnetic Spacing Lubricant Disk Overcoat Magnetic Medium Underlayer Disk Substrate Trailing Edge of Wear-in-pad Head Overcoat Clearance Conventional Slider Wear-In-Pad Sub 7 nm magnetic spacing achievable if dynamic contributors to magnetic spacing < 1.8 nm. Reference: G.P. Singh et al., IEEE Trans. Magn. 40 (2004) 3148 © 2005 Hitachi Global Storage Technologies C.M. Mate et al., Hitachi San Jose Research Center Smallest Achievable Magnetic Spacing 3. Contact Recording • Assumptions: – Head in continuous contact with media • Clearance = 0 • TOH = 1 nm (lack of flying instabilities from attractive forces => smaller TOH) – Use a burnishing process to remove sensor recession and head overcoat – Remaining static contributors evolve to fundamental limits Sensor recession Head overcoat Lubricant or contamination on head Clearance (capillary wave limit) Disk lubricant Disk overcoat Take-off height Ultimate smallest spacing 0 nm 0 0 0 0.6 1.0 1.0 2.6 nm Magnetic Head Sensors Magnetic Spacing Trailing Edge of Contact Pad Head Overcoat Lubricant Disk Overcoat Magnetic Medium Underlayer Disk Substrate One layer of flat lying molecules! © 2005 Hitachi Global Storage Technologies C.M. Mate et al., Hitachi San Jose Research Center Pushing the Limits of Magnetic Spacing: Progress Towards Contacting Interfaces Flying Slider-Disk Interface Contact Slider-Disk Interface Recording Head Physical Spacing Takeoff Height 10 8 6 4 2 0 Flying Height Distribution Take-off Height TOH # Head-Disk Interfaces Ultimate Full Contact Flying Height or Mechanical Spacing (nm) 14 12 Near Future Partial Contact Flying Height or Mechanical Spacing (nm) Flying Height or Mechanical Spacing (nm) Today Contact Avoided 14 12 10 8 6 4 2 0 # Head-Disk Interfaces 14 12 10 8 6 4 2 0 # Head-Disk Interfaces • Need to design slider-disk interfaces tolerant to contact © 2005 Hitachi Global Storage Technologies C.M. Mate et al., Hitachi San Jose Research Center Understanding Wear of Head Overcoat [Burnishing off overcoat critical for achieving minimum magnetic spacing] • Example for an Individual Slider • Initial Wear Rates for Multiple Sliders – – – Burnishing speed = 6-10 m/s – Wear rate through first 2 nm of carbon head Wear rate dV/ds = change of volume per unit sliding distance dV/ds = 3 x 10-22 m2 8.00E-022 Al2O3, TiC, elements 1.5 x 10-21 m2 dV/ds < 2 x 0 20 10-23 40 60 80 100 Accessing Time (minutes) m2 120 0.6 Friction (grams) 9.00E-022 Head Overcoat 0.5 0.4 0.3 2 1 0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10 -11 overcoat Initial Wear Rate dV/ds (m ) Pad Height Change (nm) Burnishing speed = 6 m/s Initial interference = 14 nm • Initial contact force = 1.1 grams – Disk rms roughness ~ 12 Å 7.00E-022 6.00E-022 5.00E-022 4.00E-022 3.00E-022 2.00E-022 1.00E-022 0.2 0.00E+000 0.1 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 20 40 60 80 100 Accessing Time (minutes) 120 Normal Contact Force (grams) G03SI-Wear.opj 5/23/03 Hypothesis: Wear rate increases dramatically when the contact pressure is C.M. Mate et al., IEEE Trans. Magn. 41 (2005) 626 sufficient to displace lubricant from the asperity summits. © 2005 Hitachi Global Storage Technologies C.M. Mate et al., Hitachi San Jose Research Center Candela OSA Images of ZTetraol Lubricant Depletion Due to Contact • High Wear Slider-Disk Interface – 1 Å depletion with 1 min. contact – 0. 1 Å depletion with 1 min. flying • Low Wear Slider-Disk Interface – 0.1 Å depletion with 1 min. contact or flying 6 krpm 6 krpm Flying 5 krpm 5 krpm 50 µm 4 krpm 4 krpm Contact 3 krpm 3 krpm Low Pressure High Pressure Pc Pc σS σS In Candela images, lubricant thickness scales inversely with intensity 10 nm R © 2005 Hitachi Global Storage Technologies R C.M. Mate et al., IEEE Trans. Magn. 41 (2005) 626 C.M. Mate et al., Hitachi San Jose Research Center Influence of Humidity on Wear Rate Ave. Pad Height Reduction (nm) 4.0 Relative Humidity 10% 30% 50% 70% 90% 3.5 3.0 2.5 R.H. = 10% 2.0 1.5 1.0 0.5 0.0 R.H. = 90% 0 10 20 30 40 50 60 70 Burnishing Time (minutes) (Each data point the average of four slider-disk interfaces) • Hypothesis: – Increasing humidity increases lubricant replenish mobility faster than displacement mobility © 2005 Hitachi Global Storage Technologies Q. Dai, C. Gavard C.M. Mate et al., Hitachi San Jose Research Center Contact Recording Flying Slider-Disk Interface Contact Slider-Disk Interface Recording Head Physical Spacing Takeoff Height • Advantage of Contact Recording: – Ultimate magnetic spacing • Challenges of Contact Recording: – Slider dynamics or "Bounce" – Head wear • Controlled wear during burnishing • No wear during drive operation • Metrology Issue for Today’s Talk – What is the thickness of the lubricant film sandwiched between the slider and disk surfaces? © 2005 Hitachi Global Storage Technologies C.M. Mate et al., Hitachi San Jose Research Center Disk Lubricant During Smooth Sliding Trailing Edge Bounce < 5 nm (mean-to-peak 50-2000 kHz) • Lubricant thickness measured by Candela Instrument (an ellipsometry technique) – Brightness scales inversely with lubricant thickness – Bright to Dark = 3 Å difference in lubricant thickness bridging damps Capillary Lubricant pressure at contacting asperities pulls more lubricant into the contact zone. trailing edge motion Lubricant Thickness (Å) Slider Width 1.0 mm 11.0 10.8 Contact Region 10.6 10.4 10.2 10.0 9.8 9.6 27750 27800 27850 27900 27950 28000 Radius (µm) Contact Region 50 µm Leading edge oscillation creates lubricant moguls More lubricant leads to adhesion and friction increasing with time. © 2005 Hitachi Global Storage Technologies Q.Jose DaiResearch Center C.M. Mate et al., Hitachi San Disk Lubricant During Bouncing Trailing Edge Bounce > 5 nm (mean-to-peak 50-2000 kHz) • After 15 minutes on the same track peak-to-valley thickness ∆ = 5 Å 100 kHz frequency (Same as air bearing pitch frequency) Contact Region 50 µm Meniscus around contact pad breaks and reforms Q. Dai © 2005 Hitachi Global Storage Technologies C.M. Mate et al., Hitachi San Jose Research Center Conclusion • Good News: – A magnetic spacing of 2.6 nm should be achievable with a contact recording head-disk interface • Should allow areal densities > 4 Terabit / in2 • Bad News: – Need to burnish head in a controlled manner to remove head overcoat and sensor recession – Need to have no wear during drive operation • Thickness of lubricant between head and disk that provides wear protection may have to be as little as one monolayer (6 Å) Magnetic Head Sensors Magnetic Spacing Trailing Edge of Contact Pad Lubricant Disk Overcoat Magnetic Medium Underlayer Disk Substrate © 2005 Hitachi Global Storage Technologies Head Overcoat Talk published in 2004 TRMC proceedings: C.M. Mate et al., IEEE Trans. Magn. 41 (2005) 626 C.M. Mate et al., Hitachi San Jose Research Center Exchange Coupled Composite Media for Perpendicular Magnetic Recording Jian-Ping Wang ECE Department & MINT Center University of Minnesota Email: [email protected]; Tel: 612-625-9509 University of Minnesota J. P. Wang, GB-01 INTERMAG05 Acknowledgement z Graduate students in my group at University of Minnesota: Weikang Shen and Nadia Khan; Postdoctoral fellow in my group: Dr. Jianmin Bai z Prof. Randall H. Victora and Prof. Jack H. Judy at University of Minnesota z Dr. C. J. Sun, Mr. Binghai Liu and Prof. G-M Chow at Materials Science Department, National University of Singapore. z Support by Information Storage Industry Consortium (INSIC) Extremely High Areal Density Recording (EHDR) Program, Samsung and Heraeus Inc. University of Minnesota J. P. Wang, GB-01 INTERMAG05 Outline z z z Motivation Basic structure Exchange coupled composite media (1). (2). (3). (4). (5). (6). (7). z Growth of hard layer; Growth of soft layer; Coupling dependence; Angle dependence; Switching field distribution; Switching process; Recording performance; Conclusions University of Minnesota J. P. Wang, GB-01 INTERMAG05 Perpendicular Recording z Advantages z z z x .. x Low demagnetization – high bit density Narrow track width – high track density Less sensitive to head medium spacing S Iwasaki and Y Nakamura, IEEE Trans. Magn. 13, 1272 (1977) N. Bertram, Theory of Magnetic Recording, Cambridge Press, 1994 z Thick recording layer with high Hc – thermally stable S Charap, IEEE Trans. Magn. 1994 z Promising for 1 Terabit/in2 R. Wood, IEEE Trans. Magn. 36, 36 (2000) R.H. Victora, et al, IEEE Trans. Magn. 38, 1886 (2002) M. Mallary, et al, IEEE Trans. Magn. 38, 1719 (2002) D. Weller, et al, IEEE Distinguished Lecture, 2004 University of Minnesota J. P. Wang, GB-01 INTERMAG05 “New” Concerns for Terabit/in2 Perpendicular Recording z Normalized Switching Field Hs / Hk z Sensitive to switching field distribution of media Writing field limitation Happ 1 θ 0.8 M EA 0.6 α = 0°: 0.4 ∆α = 1 o 0.2 hs = 0 0 15 (cos 30 1 2/3 ϑ + sin 2 / 3 ϑ ) = 8 % H ∆ s Hk = 2% 3/ 2 45 60 75 α = 45°: 90 Angle between Easy Axes and Applied Field α (degree) University of Minnesota H ∆ s Hk J. P. Wang, ∆α = 10 o J. P. Wang, Nature Materials, 4, 191(2005) GB-01 INTERMAG05 Possible Solutions • Tilted magnetic recording Physically tilting easy axis of magnetic grains C. H. Hee, et al, J. Appl. Phys. vol.91, pp. 8002-8004 (2002) Y.F. Zheng, et al, J. Appl. Phys. vol. 91, pp. 8007-8009 (2002) K.-Z. Gao and N. Bertram, IEEE Trans. Magn., vol. 38, pp. 3675-3683(2002) J. P. Wang et al, IEEE Trans. Magn., vol. 39, pp 1930-1935 (2003) • Exchange coupled composite (ECC) media Dynamically tilting easy axis of magnetic grains R. H. Victora, et al, IEEE Trans. Magn. 41, 537(2005) J. P. Wang, et al, Appl. Phys. Lett. 86, 142504(2005) University of Minnesota J. P. Wang, GB-01 INTERMAG05 Exchange Coupled Composite Media • The magnetic hard region provides proper thermal stability. • The magnetic soft region helps the switching of the whole grain. Soft region Hard region • Lower switching field; • Higher thermal stability; Applying a reverse field • Less angular sensitivity. Switching point University of Minnesota J. P. Wang, GB-01 INTERMAG05 Basic Structure of ECC Media Overcoat Magnetic Soft Layer Coupling Control Layer FeSiO Magnetic Hard Layer PdSi [Co/Pd]n Underlayer & Seed Layer Soft underlayer Substrate PdSiO Ru Cu/Glass Challenge: One-to-one grain columnar growth ! First experiment: J. P. Wang, et al, Appl. Phys. Lett. 86, 142504(2005) Other high Ku materials listed in Weller’s paper can be used too. D. Weller, et al, IEEE Trans. Magn. 36, 10(2000) University of Minnesota J. P. Wang, GB-01 INTERMAG05 Growth of [Co/PdSiO]n as Hard Layer • MINT 8-target UHV DC magnetron sputtering system • Ru(2-4 nm) is used as a seed layer to provide a HCP (0001) texture to epitaxially grow FCC Pd (111) initial layer; • Ru induces small grain size and narrow size distribution in the multilayer. • Oxygen and Si is doped into [Co/Pd]n multilayer to reduce the exchange coupling. [Co/PdSiO]n perpendicular media Hc(8.12 kOe), α(1.2), mean grain size (8.0 nm), Grain size distribution (22%) Switching field distribution (14.7%) University of Minnesota J. P. Wang, GB-01 INTERMAG05 M-H Loop of [Co/PdSiO]n Hard Layer 300 100 3 M (emu/cm ) 200 0 α=4π dM/dH Hc -100 -200 -300 -10000 -5000 0 5000 10000 α = 1.2 Hc = 8.12 kOe Ms= 260 emu/cm3 H (O e) [Co(0.26 nm)/PdSiO(0.87 nm)]16/PdSi(4 nm)/Ru(4 nm)/Cu(2 nm)/Glass University of Minnesota J. P. Wang, GB-01 INTERMAG05 Growth of FeSiO as Soft Layer Mean: 5.4 nm ∆D/D: 18% FeSiO(10nm)/Glass University of Minnesota J. P. Wang, GB-01 INTERMAG05 Layer Structure of ECC Media Si (1 nm) FeSiO (6.5 nm) PdSi (t nm) PdSiO(0.87nm) Co (0.26 nm) × 16 t: 0~4 nm PdSiO(0.87nm) Co (0.26 nm) PdSiO(0.87nm) Pd-SiO2(4 nm) Ru(4 nm) Cu(2 nm) Glass Si(1 nm)/FeSiO(6.5 nm)/PdSi(t nm)/ML(18.2 nm)/UL & SL/GL University of Minnesota J. P. Wang, GB-01 INTERMAG05 Plan View TEM Image of ECC Media D = 8.0 nm GD = 1 nm ∆D/D= 22% Si(1 nm)/FeSiO(6.5 nm)/PdSi(0.75 nm)/ML(18.2 nm)/PdSi( 4nm)/Ru (4 nm)/Cu(2 nm)/Glass substrate University of Minnesota J. P. Wang, GB-01 INTERMAG05 Cross-Section TEM Images of ECC Media [Co/PdSiO]n Seed & underlayer (a) (a) (b) Wax [Co/Pd]n FeSiO Dark Field Cross-Section Seed & underlayer Bright Field Cross-Section Si(1 nm)/FeSiO(6.5 nm)/PdSi(0.75 nm)/ML(18.2 nm)/PdSi( 4nm)/Ru (4 nm)/Cu(2 nm)/Glass substrate University of Minnesota J. P. Wang, GB-01 INTERMAG05 Outline z z z Motivation Basic structure Exchange coupled composite media (1). (2). (3). (4). (5). (6). (7). z Growth of hard layer; Growth of soft layer; Coupling dependence; Angle dependence; Switching field distribution; Switching process; Recording performance; Conclusion University of Minnesota J. P. Wang, GB-01 INTERMAG05 HC ~ Exchange Coupling Strength 8000 Hc (Oe) 7000 6000 5000 4000 0 University of Minnesota 1 2 tPdSi (nm) J. P. Wang, 3 4 GB-01 INTERMAG05 M-H Loops Proper coupling ECC type De-coupling 400 400 300 300 300 200 200 200 100 100 100 -100 -200 -300 -400 3 3 0 M (emu/cm ) 400 M (emu/cm ) 3 M (emu/cm ) Strong coupling Exchange-spring type 0 -100 -200 -300 -10000 -5000 0 5000 10000 H (Oe) University of Minnesota -400 0 -100 -200 -300 -10000 -5000 0 5000 10000 -400 -10000 -5000 H (Oe) J. P. Wang, 0 H (Oe) GB-01 INTERMAG05 5000 10000 Thermal Stability ~ Exchange Coupling Media type Strong coupling ECC De-coupling Perpendicular tPdSi (nm) 0 0.75 4.0 Hard layer Hc (kOe) 5.30 4.19 7.89 8.12 ∆E/kBT 91 107 109 112 ξ 1.0 1.49 0.80 1.0 • Define ξ=2∆E/(MsHsV) as the standard to evaluate the writability under a certain thermal stability. ∆ E is the thermal energy barrier, Hs is the switching field, and V is the total volume of grain. R. H. Victora, et al, IEEE Trans. Magn. 41, 537(2005) • Large ξ means high thermal stability, low switching field. University of Minnesota J. P. Wang, GB-01 INTERMAG05 Experiment vs. Simulation ∆E/kBT 107 4.19 × 17 .2 Hc 91 5.3 × 17 .2 Adjustable Parameter ξ 109 7.89 × 17 .2 Jex/(Kut) Calculations by X. Shen and R. H. Victora. University of Minnesota J. P. Wang, GB-01 INTERMAG05 Outline z z z Motivation Basic structure Exchange coupled composite media (1). (2). (3). (4). (5). (6). (7). z Growth of hard layer; Growth of soft layer; Coupling dependence; Angle dependence; Switching field distribution; Switching process; Recording performance; Conclusion University of Minnesota J. P. Wang, GB-01 INTERMAG05 Perpendicular M-H Loops & Remnant Curves ECC media University of Minnesota Perpendicular media J. P. Wang, GB-01 INTERMAG05 Angle Dependence of Coercivity Perpendicular ECC 8000 Hc (Oe) 6000 4000 2000 0 0 20 40 60 80 100 Angle (Degree) University of Minnesota J. P. Wang, GB-01 INTERMAG05 Angle Dependence of Remnant Coercivity Perpendicular ECC 9000 β= 30% Hcr (Oe) 8000 ∆Hcr 7000 β= 13% 6000 ∆Hcr 5000 4000 3000 University of Minnesota 0 20 40 60 Angle (Degree) J. P. Wang, 80 100 GB-01 INTERMAG05 β= ∆Hcr/Hcr Outline z z z Motivation Basic structure Exchange coupled composite media (1). (2). (3). (4). (5). (6). (7). z Growth of hard layer; Growth of soft layer; Coupling dependence; Angle dependence; Switching field distribution; Switching process; Recording performance; Conclusion University of Minnesota J. P. Wang, GB-01 INTERMAG05 0.20 0.15 0.10 0.05 0.00 -0.05 -0.10 -0.15 -0.20 0.15 Moment (memu) Moment (memu) Multi-Minor Loops -10000 -5000 0 5000 10000 0.10 0.05 0.00 -0.05 -0.10 -0.15 Field (Oe) ECC -10000 0 Field (Oe) 10000 Perpendicular SFD measurement method refers to Andreas Berger, et al, GB-08, InterMag 2005 University of Minnesota J. P. Wang, GB-01 INTERMAG05 Switching Field Distribution 0.0007 0.0006 Distribution (a. u.) Distribution (a. u.) 0.0010 0.0008 0.0006 0.0004 0.0002 0.0000 -5000 0.0005 0.0004 0.0003 0.0002 0.0001 0.0000 0 5000 Switching Field (Oe) 10000 ECC Distribution (∆Hs/Hs) University of Minnesota -5000 0 5000 10000 Switching Field (Oe) Perpendicular ECC Perpendicular 17 % 15 % J. P. Wang, GB-01 INTERMAG05 15000 Outline z z z Motivation Basic structure Exchange coupled composite media (1). (2). (3). (4). (5). (6). (7). z Growth of hard layer; Growth of soft layer; Coupling dependence; Angle dependence; Switching field distribution; Switching process; Recording performance; Conclusion University of Minnesota J. P. Wang, GB-01 INTERMAG05 Magnetization Switching Process (Hn=-2000 Oe) University of Minnesota J. P. Wang, GB-01 INTERMAG05 Magnetization Switching Process Switch point M/Ms Reversible Irreversible H (10 kOe) Calculations by X. Shen and R. H. Victora. University of Minnesota J. P. Wang, GB-01 INTERMAG05 Recording Performance - Contact (Drag) Tester 40 Gbit/in2 ring head Ref: 1. J. Moritz et al, Appl. Phys. Lett. 84, 1519 (2004). 2. A. Moser et al, J. Appl. Phys. 85, 5018 (1999). 3. T. D. Leonhard et al, IEEE Trans. Magn. 37, 1580 (2001). University of Minnesota J. P. Wang, GB-01 INTERMAG05 Conclusions z z Using nano-granular FeSiO layer and [Co/PdSiO]n multilayer, we successfully demonstrated a new kind of medium, namely, ECC medium, for perpendicular recording. ECC media provides the highest barrier to thermal fluctuation, compared with conventional perpendicular media or exchange-spring media, which indicates substantially higher areal densities can be attained if optimized. z ECC media has larger tolerance to the angle dispersion of magnetic easy axis for magnetic grains. z A “revolutionary” point of ECC media is the multi-functional magnetic-sub-grain design. There will be plenty of opportunities for researchers to try kinds of structures and materials design. University of Minnesota J. P. Wang, GB-01 INTERMAG05 Thermal Management in Heat Assisted Magnetic Recording Eric J. Black, Prof. T.E. Schlesinger, Prof. James Bain 12 September 2005 Overview Magnetic Recording Technology Limits Heat Assisted Magnetic Recording The STCS (Slider Thermal Characterization System) 2/26 Density trends and demos 10000 Longitudinal demos Perpendicular demos Products 1000 INSIC goal Recent demos 30 %/yr Recent products 30 %/yr 1999 demos 190 %/yr 100 Products 1998-2002 100 %/yr Historical demos 40 %/yr 10 Year 3/26 2020 2018 2016 2014 2012 2010 2008 2006 2004 2002 2000 1998 1996 1994 1992 1 1990 Gbits/sq. in IBM Millipede Summary of density trends 100000 1 grain/bit limit 2 Tbits/in2 @ 9 dB Bain 2004 (model) BAR: 11; RW/TP: 0.34; 3 grns 10000 2 Density (Gbits/in ) 1 Tbits/in2 @ 15 dB Bain 2004 (model) 2011 1000 BAR: 11; RW/TP: 0.70; 8 grns D C 2005 240 Gbits/in2 @ 15 dB various at TMRC, 2005 (demo) 100 150 Gbits/in2 @ 15 dB Mao, et al, 2004 (demo) B BAR: 6; RW/TP: 0.70; 8 grns A BAR: 6; RW/TP: 0.70; 8 grns 36 Gbits/in2 @ 20 dB: Charap, Lu, He 1997 (model) BAR: 12; RW/TP: 0.70; 8 grns 10 0 5 Grain diam (nm) 10 15 4/26 Density trends understood Use Realistic SNR model 36 Gbits/in2 -> 150 Gbits/in2 Fewer grains need to achieve required SNR Required SNR lower SNR Reduction in BAR Smaller grain size allows increased density 150 Gbits/in2 -> 250 Gbits/in2 Improve head and medium to maximum possible 250 Gbits/in2 -> 1.3 Tbits/in2 Head produces max field with max confinement Medium has no distribution SNR requirements are same Drastically reduce required SNR (15 dB –> 9 dB) 1.3 Tbits/in2 -> 2.0 Tbits/in2 Little gain due to difficulty in field confinement (high BAR) 5/26 Options for breaking 1 Tbit/in2 barrier ... Percolated perpendicular media reduction of side writing switching volume diameter will still need to stay above 7 nm good for possible Nanomasked media may change media SNR per grain switching volume diameter needs to remain at 7 nm good for possible extension of 2x (limited by writing) Practical limits: 1 Tbits/in2 (demo needed 2011) HAMR eliminates limit on switching volume transfers problem to thermal confinement 30 nm already modeled could go to 4 Tbits/in2 (needed 2017) 6/26 Heat Assisted Magnetic Recording Heating medium locally and temporally to enable data writing. The data retention time is significantly increased . 7/26 Heat Assisted Magnetic Recording KU has a significant temperature dependence for most materials*. In HAMR, a localized temperature rise temporarily reduces the KU of the target grains so that HC becomes smaller than HW. Current HAMR designs call for heating via optical methods. J-U. Thiele, K.R. Coffey, M.F. Toney, J.A. Hedstrom, A.J. Kellock, “Temperature dependent properdies of highly chemically ordered Fe55-xNixPt45L10 films” Journal of Applied Physics Vol. 91, No. 10, pp. 6595-6600, May 2002 8/26 HAMR Challenges Media Design Fast thermal rise and fall times but minimal power requirement for sufficient heating. Candidate media designs using known materials require ~2mW of optical power to heat a 50nm wide spot by 400ºC in 0.2ns* Lubricant Design Tolerant of high temperature transients. New tribological materials appear sufficient.** Slider Architecture Integration of optical and magnetic systems into a single device allowing sub diffraction limit optical spots to be co-located with applied magnetic fields. Thermal load consequences for the slider must be considered. *McDaniel T.W. “Ultimate limits to thermally assisted magnetic recording” J. Phys. Condens. Mat., 17, R315-R332, 2005 **Peng W et al 2003 Tribol. Int. (special issue: Tribology of Information Storage Devices) to be published 9/26 Slider Thermal Characterization System We have constructed an automated system to characterize the response of sliders to applied thermal loads. A laser is swept across the slider ABS as the thermal response is monitored. Controlled Variables: Laser spot position on target device. Incident laser power and duration. Measured Responses: Laser power incident and reflected. Change in magnetoresistance. Calculated Responses: Target reflectivity. Laser power absorbed. Element temperature change. V Photodetector Splitter Reflector Photodetector Objective V Target Device 10/26 Reflectivity Measurement ~1.2 mm Reflectivity Incident and Reflected power measurements are used to calculate the reflectivity of the material. Correction factor is applied to account for losses in optics, splitting, etc. Regions outside the focal depth of field show very low reflectivity. 11/26 Normalization for Absorbed Optical Power Temperature Rise C°/4.73mW Temperature Rise C° Raw Thermal Map Normalized Thermal Map Raw thermal data can be normalized with the reflectivity map. This is as if all points on the slider absorbed the same amount of power. Read element experiences over twice the temperature rise of the slider bulk. 12/26 1D Heat Conduction Suspension Slider Source Stainless Steel 30 W/m·Cº AlTiC 22 W/m·Cº Rslider Air 0.01 W/m·Cº RAB Glass 1.28 W/m·Cº Rdisk Rsuspension Air Bearing Disk Assume heat conduction can be treated with a 1-dimensional lumped element model. 13/26 Back of the Envelope RAB Rslider Rdisk Rsuspension RJ = ∆T −1 ⎛ W 0.0015m ×10 m ⎞ C° ⎟ ⎜ = 3.1 = ⎜ 30 ⋅ ⎟ mW 0.014m ⎠ ⎝ m ⋅ C° −4 RSuspension l R= kA −1 RSlider W 0.001m × 0.0012m ⎞ C° ⎛ = ⎜ 22 ⋅ ⎟ = 0.007 mW 0.00018m ⎠ ⎝ m ⋅ C° −1 W 0.001m × 0.0012m ⎞ C° ⎛ ⋅ = RAB = ⎜ 0.01 0 . 0008 ⎟ −8 ⋅ ° m C m mW 10 ⎝ ⎠ −1 RDisk W 0.001m × 0.0012m ⎞ C° ⎛ = ⎜1.28 ⋅ ⎟ = 0.41 m ⋅ C° mW 0.00063m ⎝ ⎠ 14/26 The Read Element Reflectivity Restricting the scan to the region nearest the read element. Encoder resolution limited 2µm steps. High reflectivity of the shields, read and write elements is more visible. 15/26 Slider in Air Rslider Rdisk Rsuspension Temperature Rise C°/10mW RAB The disk and air bearing are not present Normalized map is scaled as if 10mW is uniformly absorbed at all locations. Measured read element thermal response: ~ 3.0 ºC/mW. Predicted thermal impedance Rsuspension+Rslider: 3.1 ºC/mW. 16/26 Slider on Glass Rslider Rdisk Rsuspension Temperature Rise C°/10mW RAB Same type of slider, now held against a stationary glass disk. Disk has a thin carbon overcoat (5nm) and lubricant layer. Measured read element thermal response: ~ 1.3ºC/mW. Predicted thermal impedance Rdisk: 0.41ºC/mW Solving for Rdisk: 2.24ºC/mW 17/26 Flying Slider Rslider Rdisk Rsuspension Temperature Rise C°/10mW RAB Same type of slider, now flying over the lubricated glass disk. Read element thermal response: ~2 ºC/mW. Predicted thermal impedance RAB: 0.0008 ºC/mW Solving for RAB we get: 3.8 ºC/mW 18/26 Theory vs. Reality RAB 0.0008ºC/mW RDisk 0.4ºC/mW RSlider 0.007ºC/mW RAB 3.8ºC/mW RSlider 0.007ºC/mW RSuspension 3ºC/mW RDisk 2.2ºC/mW RSuspension 3ºC/mW Predicted Total Impedance: 0.35ºC/mW Observed Total Impedance: 2ºC/mW Calculation indicates that the AB should act like a short to the disk due to its low thermal impedance (only 0.0008ºC/mW). How could such a small thermal impedance make such a large difference? 19/26 Effective Area We have been using the entire ABS for calculation. Experimental observations show that a much smaller region is involved for this system. Backsolving for RAB using a thermal impedance of 3.8ºC/mW yields an effective area with radius of 9.15µm 0 µm From Read Element 3 µm From Read Element 9 µm From Read Element 20/26 Optical Path Efficiency Read/Write Power Input 5mW Slider power concentrated in 9µm spot Waste Heat 42mW Optical Source Total Thermal Load 63mW Max Temperature Rise 126ºC!!! Transducer Loss 16mW Laser Electrical Power Input 30% Efficient* Power 18mW 60mW Near Field Transducer 11% Efficient** Near Field Coupling 2mW Media ∆K=400º Heat Sink 2mW * Sendur, K., Chubing Peng, Challener, W., Near-field radiation from a ridge waveguide transducer in the vicinity of a solid immersion lens, Physical Review Letters, 94, 4 Feb. 2005, p 043901 ** K.P. Pipe, R.J. Ram, “Comprehensive Heat Exchange Model for a Semiconductor Laser Diode”, IEEE Photon. Technol. Lett., 15, April 2003 21/26 Optical Path Efficiency II Read/Write Power Input 5mW Slider power concentrated in 13µm spot Waste Heat 42mW Optical Source Total Thermal Load 63mW Max Temperature Rise 95ºC!! Transducer Loss 16mW Laser Electrical Power Input 30% Efficient* Power 18mW 60mW Near Field Transducer 11% Efficient** Near Field Coupling 2mW Media ∆K=400º Heat Sink 2mW * Sendur, K., Chubing Peng, Challener, W., Near-field radiation from a ridge waveguide transducer in the vicinity of a solid immersion lens, Physical Review Letters, 94, 4 Feb. 2005, p 043901 ** K.P. Pipe, R.J. Ram, “Comprehensive Heat Exchange Model for a Semiconductor Laser Diode”, IEEE Photon. Technol. Lett., 15, April 2003 22/26 Optical Path Efficiency III Read/Write Power Input 5mW Slider power concentrated in 18µm spot Waste Heat 42mW Optical Source Total Thermal Load 63mW Max Temperature Rise 63ºC! Transducer Loss 16mW Laser Electrical Power Input 30% Efficient* Power 18mW 60mW Near Field Transducer 11% Efficient** Near Field Coupling 2mW Media ∆K=400º Heat Sink 2mW * Sendur, K., Chubing Peng, Challener, W., Near-field radiation from a ridge waveguide transducer in the vicinity of a solid immersion lens, Physical Review Letters, 94, 4 Feb. 2005, p 043901 ** K.P. Pipe, R.J. Ram, “Comprehensive Heat Exchange Model for a Semiconductor Laser Diode”, IEEE Photon. Technol. Lett., 15, April 2003 23/26 Optical Path Efficiency IV Read/Write Power Input 5mW Slider power concentrated in 36µm spot Total Thermal Load 63mW X16 Waste Heat 42mW Optical Source Transducer Loss 16mW Laser Electrical Power Input 30% Efficient* Power 18mW 60mW Near Field Transducer 11% Efficient** Near Field Coupling 2mW Max Temperature Rise 20ºC Media ∆K=400º Heat Sink 2mW * Sendur, K., Chubing Peng, Challener, W., Near-field radiation from a ridge waveguide transducer in the vicinity of a solid immersion lens, Physical Review Letters, 94, 4 Feb. 2005, p 043901 ** K.P. Pipe, R.J. Ram, “Comprehensive Heat Exchange Model for a Semiconductor Laser Diode”, IEEE Photon. Technol. Lett., 15, April 2003 24/26 Conclusions Traditional HDD recording is reaching limits. My research focuses on determining the magnitude and effect of the thermal transients on the read element and slider materials for use in HAMR. Metrology tool for evaluating heat conduction in sliders has been developed. The high power density used to load the slider in the experiment makes the air bearing appear to be a poor thermal conductor. The air bearing is actually a good thermal conductor, but not when the cross sectional area of the thermal channel is very small. Increasing the thermal conductivity of the slider near ABS should expand the effective area of the thermal channel through the air bearing, thus minimizing the impedance of the air bearing. 25/26 Credits This work was performed as part of the INSIC HAMR ATP Program, with the support of the U.S. Department of Commerce, National Institute of Standards and Technology, Advanced Technology Program, Cooperative Agreement Number 70NANB1H3056. 26/26 Introduction of Perpendicular Magnetic Recording Hard Disk Drive IDEMA International Disk Forum 2005 Sep.21, 2005 Hiroshi Okamura TOSHIBA 1 / 123 Copyright © 2005 Toshiba Corporation. All rights reserved.V Outline 1. Introduction 2. Drive Performance and Features for Mobile HDD - Thermal Stability - Write Performance - FH Sensitivity 3. PRML channel 4. The First Product 5. Summary 2 / 22 Hiroshi Okamura, IDEMA 2005, Sep. 21, 2005 Copyright © 2005 Toshiba Corporation. All rights reserved. Original Work on Perpendicular Recording • • • • Circular Magnetization Mode Study in Ultimate LMR – S. Iwasaki and K. Takemura, An analysis for the circular mode of magnetization in short wavelength recording, IEEE Trans. Magn., vol. 11, pp.1173-1175, 1975 – Idea of Perpendicular Component Magnetization for Stable Recording Perpendicular Recording Concept – S. Iwasaki, Y. Nakamura, An analysis of the magnetization mode for high density magnetic recording, IEEE Trans. Mang., vol. 13, pp.1272-1277, 1977 – The first integration results of perpendicular recording configuration Perpendicular Anisotropy Media with SUL – S. Iwasaki, H. Yamazaki, Sputtered-deposited CoCr film with perpendicular anisotropy, Abstract of Ann. Conf. of IEICE Jpn., 1976-1, pp.187, 1976 – S. Iwasaki, K. Ouchi, Co-Cr recording films with perpendicular magnetic anisotropy, IEEE Trans. Magn., vol. 14, pp.849-851, 1978 – S. Iwasaki, Y. Nakamura, K. Ouchi, Perpendicular magnetic recording with a composite anisotropy film, IEEE Trans. Magn., vol. 15, pp.1456-1458, 1979 Single Pole Perpendicular Head – 3 / 22 S. Iwasaki, Y. Nakamura, An analysis of the magnetization mode for high density magnetic recording, IEEE Trans. Mang., vol. 13, pp.1272-1277, 1977 Hiroshi Okamura, IDEMA 2005, Sep. 21, 2005 Copyright © 2005 Toshiba Corporation. All rights reserved. Recording Physics: LMR vs. PMR Longitudinal Recording System Ring type writer for longitudinal recording Reader S NN SS SS NN Recorded magnets repulse and weaken each other in longitudinal recording. Longitudinal recording layer N Longitudinal (in-plane) write field Perpendicular Recording System Perpendicular Single Pole Writer Reader N S S N N S S N N S S N N S Perpendicular Recording Layer The perpendicular recording system is suitable for high density recording, because of the strong magnetic coupling between neighboring magnetic bits. Soft-magnetic Under Layer Perpendicular Write Field 4 / 22 Hiroshi Okamura, IDEMA 2005, Sep. 21, 2005 Copyright © 2005 Toshiba Corporation. All rights reserved. Recording density advantages with PMR Complementary Features in Engineering Nature* Head* Medium* Therm. Stability Write Servo Read Perpendicular Longitudinal λ → 0 Hd → 0 Single pole-type Perp. anisotropy (uniaxial) Thick δ, High Ms, High Hc High squareness w/ Soft under layer Good at high density Medium in write flux path - Efficient writing - High freq writing - Wide temp range - Relaxed spacing Sharp transition/narrow erase band - High TPI servo writing High output - High SNR - Good tracking servo - Relaxed sensitivity Narrow reading - Flux from coupled transition λ → 0 Hd → 4πM Dipole (Ring)-type Long. Anisotropy (2D rand) Thin δ, Low Ms, High Hc Low squareness Rec layer only Good at low density Medium outside of flux path - Narrow spacing required Low output - High sensitivity required Wide reading - Flux from head-on transition *Source; Shun-ichi Iwasaki, “Perpendicular magnetic recording”, IEEE Trans. Magn., Vol. MAG-15, pp.71-76 (1980) 5 / 22 Hiroshi Okamura, IDEMA 2005, Sep. 21, 2005 Copyright © 2005 Toshiba Corporation. All rights reserved. Concept of Reliable Perpendicular Media - Squareness (Mr/Ms) > 0.98, Negative nucleation field Y. Tanaka, T. Hikosaka, Perpendicular recording with high squareness M 1.5 Hn Hd CoPtCrO media, J. Magn. Magn. Mater., 235, pp.253-258, 2001 (Presented at PMRC2000) 1.0 10K 50K 100K 200K 300K H 0.5 -4 M [10 emu] - Hn=Hc×S* 0.0 -20000 -15000 -10000 -5000 0 5000 10000 15000 -0.5 0.2 Output [dB] 1.5 -1.5 H [Oe] Mt [memu/cm2] 0.5 -15000 -10000 -5000 0 5000 10000 15000 6 / 22 -1.5 -0.4 CoCr perp. 10kFCI -0.6 20000 -0.5 -1.0 -0.2 -0.8 0.0 -20000 longitudinal 10kFCI CoPtCrO perp. 10kFCI CoCr perp. 100kFCI 0 -1.0 1.0 20000 10K 50K 100K 200K 300K Hiroshi Okamura, IDEMA 2005, Sep. 21, 2005 H [Oe] -1 1 10 100 time [sec] Copyright © 2005 Toshiba Corporation. All rights reserved. Thermal Stability of Perpendicular HDD - Extremely stable at high density - Decay rate: -0.055 dB/decade at low density - Good thermal stability by high nucleation field Hn - Hn provides the robustness against disturbing fields 0 Thermal Decay Rate (dB/decade) Thermal Decay Rate (dB/decade) 0 -0.05 -0.1 -0.15 65degC -0.1 -0.15 -0.2 -0.2 0 100 200 300 400 500 Linear Density (kFCI) 7 / 22 -0.05 Hiroshi Okamura, IDEMA 2005, Sep. 21, 2005 0 500 1000 1500 Hn (Oe) Copyright © 2005 Toshiba Corporation. All rights reserved. Suppressed Thermal Stability in PMR HDD - Stable BER: decay rate better than -0.034 order/decade -4 65degC B ER -4.5 -5 OD MD ID A verage -5.5 -6 0 1 2 3 4 5 6 Log tim e (sec) 8 / 22 Hiroshi Okamura, IDEMA 2005, Sep. 21, 2005 Copyright © 2005 Toshiba Corporation. All rights reserved. Write Performance in Wide Temp Range - Good write performance is kept even at low temperature. - Wider temperature range possible than longitudinal -20 2 delta BER 1.5 OW(dB) -25 Longitudinal 1 Longitudinal -30 -35 Perpendicular -40 Perpendicular 0.5 -45 -40 -20 0 20 40 60 80 100 Temperature (degC) 0 -40 -20 0 20 40 60 Temperature (degC) 9 / 22 Hiroshi Okamura, IDEMA 2005, Sep. 21, 2005 80 100 Temp. Dependence of Hc LMR -16~21 Oe/degree PMR -11~16 Oe/degree Copyright © 2005 Toshiba Corporation. All rights reserved. Analysis of Spacing Effects - Write spacing loss is very small in PMR. ⊿BER (log) LMR 0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1 Magnetic spacing PMR(Read&Write) PMR(Read) PMR(Write) LMR(Read&Write) PMR Magnetic spacing 0.6 0.7 0.8 0.9 1 Air Pressure (atm) 1.1 1.2 SUL NOTE: 0.1 atm pressure change corresponds to 1nm spacing change. 10 / 22 Hiroshi Okamura, IDEMA 2005, Sep. 21, 2005 Copyright © 2005 Toshiba Corporation. All rights reserved. Safe for Neighbors init. 10k 20k 50k 100k 200k 500k 1M 0.4 0.2 0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 # of writes 0.4 0.2 65degC -20 -10 0 10 Track Width [um] 0.0 20 delta BER delta BER - No PMR-head/media related erasure after 1 million write cycles. -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -3 11 / 22 Hiroshi Okamura, IDEMA 2005, Sep. 21, 2005 -2 -1 0 1 Track Width [um] 2 3 init. 10k 20k 50k 100k 200k 500k 1M Copyright © 2005 Toshiba Corporation. All rights reserved. BPI / TPI Ratios; Toward Higher BPI 160 BPI/TPI=6 Track Density (kTPI) BPI/TPI=8 140 Perpendicular HDD Longitudinal HDD 120 140Gbpsi 120Gbpsi 100Gbpsi 100 BPI/TPI=10 80Gbpsi 60Gbpsi 80 600 12 / 22 800 1000 Linear Density (kBPI) Hiroshi Okamura, IDEMA 2005, Sep. 21, 2005 1200 Copyright © 2005 Toshiba Corporation. All rights reserved. High Density Recording beyond 1MBPI - 1.2Mbpi(1200kbpi) achieved with MWW=137nm head Over 1MBPI Performance (for over 200Gbpsi) -3.5 -4.0 INTERMAG2005 MWW=182nm, uMRW=97nm BER -4.5 MWW=137nm, uMRW=75nm -5.0 -5.5 -6.0 0.95 1 1.05 1.1 1.15 1.2 1.25 1.3 1.35 Linear Density [Mbpi] 13 / 22 Hiroshi Okamura, IDEMA 2005, Sep. 21, 2005 Copyright © 2005 Toshiba Corporation. All rights reserved. PRML PR class LMR: Polynomial 1) negative target(PR4) PMR: 1)dif. +negative target(PR4) 2)Positive target(PR2) 3)Negative target(PR3) (1,1) (1,1)(1,1) (2,-1)(1,1) LMR (1,-1)(1,1) -(1,-1)2(1,1)2 PMR 14 / 22 PR3 is better for media noise and HPF distortion by its frequency response Hiroshi Okamura, IDEMA 2005, Sep. 21, 2005 Copyright © 2005 Toshiba Corporation. All rights reserved. PRML differentiation or non differentiation? What is the consideration ? U B D = 2.0 -3 Non – Differentiation method -4 B E R (L og) – TA robustness – HPF distortion – DC offset loop robustness ( PR3) -●- PR3=PR(2,1,-1) -▲- EPR3=PR(2,3,0,-1) (PR2) -5 -●- PR2=PR(1,2,1) -▲- EPR2=PR(1,3,3,1) -■- E2PR2=PR(1,4,6,4,1) -6 -7 0 HPFfc/TBGmin < 0.05% HPF Fc/TBG=0.01% 15 / 22 Hiroshi Okamura, IDEMA 2005, Sep. 21, 2005 0.002 0.004 0.006 0.008 0.01 N orm alizeed H P F fc (fc/fs) HPF Fc/TBG=0.5% Copyright © 2005 Toshiba Corporation. All rights reserved. PRML differentiation or non differentiation? ○ × □ ◇ + ▽ △ * > < ◇ What is the consideration ? • Differentiation method – Differentiator distortion – Asymmetry distortion [A] 1.0 1.0 0.9 0.9 1.0 0.8 0.8 1.0 0.7 0.7 0.6 [B] Asym(%) 1.0 0 0.9 5.0 1.0 -5.3 0.9 0 0.8 10.5 1.0 -11.1 0.8 0 0.7 16.6 1.0 -17.6 0.7 0 0.6 0 ER loss Asym : 0.5% 0.3 order Asym : 15% 0.5 order d/dt Asymmetry 16 / 22 Hiroshi Okamura, IDEMA 2005, Sep. 21, 2005 Phase shift Copyright © 2005 Toshiba Corporation. All rights reserved. PRML differentiation or non differentiation? ER comparison Not much difference between differentiation and non differentiation methods without any distortion under UD is less than 2.0. Row SER NPs:NPm = 25%:75% @2T 所要ACSN_2T @帯域1T (dB) ACSN@SER=10-5 @SER=10-5 14 PR(1-1)(5852)+MNP PR(65-1-2)+MNP 13 12 11 10 1.5 2.0 UBD 2.5 *30/32PRML-PP 17 / 22 Hiroshi Okamura, IDEMA 2005, Sep. 21, 2005 Copyright © 2005 Toshiba Corporation. All rights reserved. The First Product of Perpendicular HDD • 1.8”HDD 40GB “MK4007GAL” and 80GB “MK8007GAH” 18 / 22 Hiroshi Okamura, IDEMA 2005, Sep. 21, 2005 Copyright © 2005 Toshiba Corporation. All rights reserved. HDD Specifications Main Specifications Model name Formatted capacity Number of platters Number of heads Average seek time Data transfer rate Rotational speed Interface External dimensions Weight Shock resistance 19 / 22 MK8007GAH 80GB 2 4 MK4007GAL 40GB 1 2 15msec Ultra DMA/100 4,200rpm ATA-6 54 x 78.5 x 8 (mm) 54 x 78.5 x 5 (mm) 62g 51g 2 Operating: 4,900m/s (500G: 2msec) Non-operating: 14,700m/s2 (1,500G: 1msec) Hiroshi Okamura, IDEMA 2005, Sep. 21, 2005 Copyright © 2005 Toshiba Corporation. All rights reserved. Recording Specifications PMR 1.8” 40GB HDD LMR 1.8” 30GB HDD Increment 40GB 30GB 133% Areal Density 133Gbpsi 93.4Gbpsi 137% TPI 135kTPI 119.5kTPI 112% BPI(ave/max) 969/989kBPI 783/808kBPI 123% Head / Media SPT-GMR / DL-PMR GMR / LMR PRML PRML Capacity Channel 20 / 22 Hiroshi Okamura, IDEMA 2005, Sep. 21, 2005 Copyright © 2005 Toshiba Corporation. All rights reserved. Perceptions Facts PMR achieves higher linear density. True LMR < 900kbpi, PMR > 1.2Mbpi PMR is thermally stable. True Only high squareness media realizes stable BER performance. SUL is unstable for commercial products. Not No signs of reliability issues due to SUL PMR requires lower FH. Not PMR has more robustness for FH. PMR has a wide erasure area while writing. Not No degradation on full surface media after 1 million write cycles. PMR is too sensitive for external field. Not Controllable as same robustness as LMR. Perpendicular recording pole may have remanence magnetization related erase problems (Pole Erasure). Not No Pole Erasure observed with 100 million write cycles. 21 / 22 Hiroshi Okamura, IDEMA 2005, Sep. 21, 2005 Copyright © 2005 Toshiba Corporation. All rights reserved. Summary • Toshiba has achieved a new areal density record in the commercial HDD categories at 133Gb/in2 with perpendicular recording technology. This has allowed the storage of 40GB of data onto a single 1.8-inch platter. This is the world’s first commercial HDD featuring perpendicular recording technology. • Perpendicular magnetic recording shows great potential in environmental robustness, thermal stability, low temperature writing, and flying height variation sensitivity even at high recording density. 22 / 22 Hiroshi Okamura, IDEMA 2005, Sep. 21, 2005 Copyright © 2005 Toshiba Corporation. All rights reserved. Exchange Spring Media for Perpendicular Recording D. Suess, J. Fidler Vienna University of Technology, Austria T. Schrefl, University of Sheffield, UK Outlook Exchange spring media high energy barrier moderate coercivity Optimization high energy barrier Write heads write field properties and media design Read back signal micromagnetic reader simulations Introduction Problem Using high coercive material gives high thermal stability but head field can not saturate the media Antiferromagnetic exchange spring media [1,2] Composite media [3,4] Exchange Spring media [5] • • • • • • [1] J. U. Thiele, S. Maat, E. Fullerton, Appl. Phys. Lett., vol. 82, pp. 2859, 2003. [2] K. Yu. Guslienko, O. Chubykalo-Fesenko, O. Mryasov, R. Chantrell, and D. Weller Phys. Rev. B, vol. 70, pp. 104405, 2004 [3] R.H. Victora, X, Shen, IEEE Trans. Mat. Mater., vol 41, pp 537, 2005. [4] J.P Wang et al. Intermag,Jacksonville 2004. [5] D. Suess, T. Schrefl, M.Kirschner, F. Dorfbauer, G. Hrkac, J. Fidler, Journal of Magnetism and Magnetic Materials vol 290 - 291 pp 551 2005 Exchange Spring Media • Soft and hard grains are strongly exchange coupled soft • Soft layer helps to reverse the hard layer. A domain wall is formed during reversal hard • Soft layer does no significantly change the thermal stability Conventional perpendicular media Energy barrier Switching field anisotropy over magnetization V K M J Hext Rotation grain volume times anisotropy Exchange spring media Hext rotation Thermal activation domains soft hard Decouple field driven and thermally induced switching Strongly exchange coupled layers Soft layer reduces the switching field Hard layer provides high energy barrier Optimization - Figur of Merit • For a given saturation field the highest thermal stability • Best exchange spring media is compared with best single phase media Optimization – Single Layer • Head field, Bh, has to be large enough to reverse the last grain • Strayfield stabilizes the last grain, exchange between grains helps to reverse the last grain K(J) or J(K) Saturation Field, Hsat Hext Js Js/µ0 Hext Hsat Optimization single Layer– Energy barrier Hdemag • Search for maximal energy barrier for given Bh and Bex. Optimization – Single Layer 1. EQ 2. EQ Optimization – Single Layer • Contour plot of energy barrier for a grain diameter of 8nm 100 kbT • • • • • Hsat = 1.7 T µ0 Hex = 0.2 T Grain diamter 6 nm Film thickness 14 nm ∆E= 18 kbT300 14 kbT Lines of equal barrier height Optimization Bilayer, Hs • Taking into account the demagnetizing field and Intergranular exchange (Hex = 0,2 T) • K1 is iteratively determined in order to get saturation field, Hs of 1.7T . • Angle between external field an easy axis 1°. Hext soft hard Optimization Bilayer ( Js,hard = Js,soft) Optimal structure: lhard = 5,3 nm, lsoft = 8,7nm, Js = 0.55 T, K = 1,3 106 J/m³ 40 18 • • • • Hsat = 1.7 T µ0 Hex = 0.2 T Grain diamter 6 nm Film thickness 14 nm All hard single Phase media Further Optimization - vary Js,hard and Js,soft • Js,soft was varied from 0,3 T to 0,9 T. Js,hard was chosen in a way to get an average Js of 0,5 T. • Energy barrier can be increased by 22% when different Js values are used in the hard and the soft layer. Javerage = 0,45 T Javerage = 0,55 T Js,soft(T) 0,3 Js,soft(T) 28,04 26,89 26,17 25,33 24,73 24,34 25,79 32,22 29,86 27,53 25,72 25,02 24,34 26,45 25,79 35,67 33,46 29,95 26,85 25,21 24,34 30,25 27,00 25,79 37,91 37,17 33,23 28,10 25,31 24,34 39,73 32,65 27,58 25,79 38,54 40,20 36,44 29,87 25,90 24,34 43,53 43,19 35,30 28,14 25,79 38,55 42,24 40,02 31,81 26,41 24,34 43,62 46,33 38,25 28,71 25,79 37,25 43,04 43,33 34,40 26,91 24,34 47,79 41,47 29,71 25,79 37,23 43,21 46,24 37,22 27,45 24,34 30,36 28,63 27,58 26,45 26,03 25,79 34,41 32,31 29,47 27,28 26,25 37,75 36,29 32,54 28,49 39,27 39,90 36,14 39,22 42,23 38,12 0,9 0,5 0,75 1 r = hard thickness/total thickness 0,3 0,9 0,5 0,75 1 r = hard thickness/total thickness Introducing an exchange breaking layer •In a 2 nm thick layer the exchange was reduced by a factor of 2 ,3, 4, 5, and 6 •Js,hard = Js,soft = 0.5 T State at the saddle point for optimal structure • Using the nudged elastic band method for calc. of saddle point • The demagnetizing field of 0.5 T is taken into account • Exchange field of 0.2 T stabilizes the grain • The state at the saddle point is almost homogeneous Saddle Point Inital State soft hard Final State Magnetization states during reversal • Exchange field of 0.2 T is taken into account • Reversal mode different from thermal induced switching A B C D E B C D E A Optimal Structure thickness = 5,3 nm, Js = 0.9 T, K = 0 J/m³ soft thickness = 8,7 nm Js = 0.26 T, K = 9,6 105 J/m³ d=6nm (cylindrical grain) hard Javerage= 0,5 Hc = 1,4 T Hsat = 1,7T [2] ∆E = 48kbT Media characteristics Recording on a conventional and on an exchange spring media same average Js = 0.5 T same Hc = 0.94 T at 4 degree Measuring the energy barrier • For single phase media using Sharrocks law • Assumption the energy barrier can be described by 6.3nm 7.0nm 7.5nm 8.7nm • Single phase media: m~2 • Exchange spring media m~1 Perpendicular recording simulations Finite elements head and soft underlayer magnetization dynamics coil 2 µm head data layer 1 nm soft under layer Fast BEM methods hierarchical matrices for all long range interactions Fast Poisson solvers interaction of moving parts current Final bit patterns exchange spring single phase current Recording of bit transitions Input current Current in the coil as function of time Data layer blue M points down red M points up Head field as seen by the data layer green zero field blue H points down red H points up Recording Process Head field Magnetization Influence of Exchange 20% of Ha 60% of Ha Exchange Spring Media Single Phase Media 80% of Ha Write field rise time current write field single layer 1 ns Write field rise time 0.2 T permeability of soft layer shortens the field rise time by 0.5 ns current Switching process slice plane reversal times for three configurations - single layer - pole tip soft/hard SUL - pole tip hard/soft SUL Exchange spring media 0.2 ns 0.4 ns 0.6 ns Non uniform reversal 0.8 ns 1.0 ns transition Single phase media 0.2 ns 0.4 ns 0.6 ns Uniform rotation 0.8 ns 1.0 ns transition Head - media interactions soft hard SUL 0.4 ns 0.6 ns hard soft SUL 0.4 ns 0.8 ns transition 0.6 ns 0.8 ns Summary Reversal modes Thermal induced switching mode significantly differs from field indcued switching mode -> ∆E and Hsat can be tuned seperately Exchange spring media strongly coupled hard and soft layers factor of 2 in energy barrier permeability of soft layer shortens write field rise time Huge Magnetoresistance in Magnetic Tunnel Junctions Using MgO barrier and Its Applicability for Next Generation Magnetic Read-Head David D. Djayaprawira ANELVA Corporation Process Technology Group Electron Device Equipment Division September 21, 2005 Acknowledgement K. Tsunekawa, H. Maehara, M. Nagai, S. Yamagata, E. Okada, N. Watanabe from ANELVA. S. Yuasa1), K. Ando1), Y. Suzuki1,2) 1)Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST) 2)Graduate School of Engineering Science, Osaka Univ. Outline Introduction Sample preparation Growth mechanism of MgO barrier layer Mechanism of Huge TMR ratio in CoFeB/MgO/CoFeB MTJs Applicability of MgO-based MTJs for TMR head Introduction Fe, Co Al2O3 Fe, CoFe amorphous CoFeB Al2O3 amorphous Fe, CoFe, CoFeB MgO(001) CoFeB Fe, CoFe ~20% ~70% ~220% • T. Miyazaki, Tohoku Univ. (1995) • D. Wang, NVE (2004) • S. Yuasa, AIST (2004) • K. Tsunekawa, ANELVA (2004) • S. S. P. Parkin, IBM (2004) • J. S. Moodera , MIT (1995) Theoretical predictions Huge TMR effect is expected for fully epitaxial Fe/MgO/Fe(001) MTJs MR ratio > 1000% W. H. Butler, X.-G. Zhang, T. C. Schulthess and J. M. MacLaren, Phys. Rev. B 63, 054416 (2001). J. Mathon and A. Umersky, Phys. Rev. B 63, 220403R (2001). CoFeB/MgO/CoFeB MTJs 300 MR ratio [%] 250 MR 268% RA 4.5 kΩ-µm2 200 150 100 amorphous CoFeB MgO(001) amorphous 50 0 -1000 CoFeB 0 1000 H [Oe] D. D. Djayaprawira et. al presented at Intermag 2005 D. D. Djayaprawira, et al., Appl. Phys. Lett. 86, 092502 (2005). Sample preparation MTJ Deposition (ANELVA C-7100) Field annealing CAPRES A/S MTJ characterization (CIPT measurement @RT) 12-point probe Current-In-Plane-Tunneling D. C. Worledge et al. APL 83, 84-86 (2003) Patterning (Photolithography) 1 µm MTJ etching 1 µm (Ar ion milling) MTJ characterization (4-point probe @RT) Patterned element Deposition conditions Equipment: Sputtering method: Substrate: Substrate temp.: Base pressure: Ar pressure: CoFeB target comp.: ANELVA C-7100 sputtering system DC magnetron sputtering for metals RF magnetron sputtering for MgO with pure Ar Thermally oxidized Si wafer Ru (70Å) Ambient < 5×10-7 Pa Ta (100Å) 0.02 ~ 0.1 Pa CoFeB (30Å) Co60Fe20B20 MgO (18Å) CoFeB (30Å) Ru (8.5Å) CoFe (25Å) PtMn (150Å) Ta (100Å) Th-ox Si sub. Outline Introduction Sample preparation Growth mechanism of MgO barrier layer Mechanism of Huge TMR ratio in CoFeB/MgO/CoFeB MTJs Applicability of MgO-based MTJs for TMR head TEM image for as-deposited CoFeB/MgO/CoFeB MTJ Ta amorphous CoFeB MgO(001) amorphous CoFeB Ru Co70Fe30 5 nm PtMn SAF Crystal structure of as-deposited CoFeB(30Å)/MgO(100Å)/CoFeB(30Å) 220 8000 200 MgO(200) 6000 Intensity (cps) Intensity (cps) 7000 5000 4000 3000 2000 In-plane XRD MgO (220) 180 160 140 120 100 1000 0 30 MgO (200) Out-of-plane XRD 80 35 40 45 50 2θ (deg) 55 60 65 30 40 50 60 2θχ (deg) MgO tunnel barrier was polycrystalline with (100) preferential texture CoFeB is amorphous in as-deposited state 70 80 MgO grown on crystalline CoFe ferromagnetic electrode Co70 Fe30 MgO Co70 Fe30 Ru 5nm Co70 Fe30 CoFe/MgO/CoFe MTJ (MR=69%) CoFeB MgO CoFeB 5nm CoFeB/MgO/CoFeB MTJ (MR>200%) Ru Co70 Fe30 Summary 1 Growth mechanism of MgO (100) barrier MgO with (100) preferred orientation can be grown on CoFeB probably due to the amorphous nature of CoFeB layer, which eliminate the lattice mismatch issue (in contrast if we use crystalline ferromagnetic electrode) (100) fiber texture is the preferred orientation growth for MgO (a rock-salt structure). Outline Introduction Sample preparation Growth mechanism of MgO barrier layer Mechanism of Huge TMR ratio in CoFeB/MgO/CoFeB MTJs Applicability of MgO-based MTJs for TMR head Annealing temp. dependence MR ratio (%) 250 Ru (70Å) Ta (100Å) 200 CoFeB (30Å) MgO (18Å) CoFeB (30Å) Ru (8.5Å) CoFe (25Å) 150 100 PtMn (150Å) 50 Ta (100Å) Th-ox Si sub. 0 300°C ×4hr 330°C ×3hr 360°C ×2hr 400°C ×1hr Annealing condition The highest MR ratio was obtained at anneal temp. of 360°C for 2 hours. Annealing temp. dependence of CoFeB(30Å (30 )/MgO(100Å (100 )/CoFeB(30Å (30 ) CoFeB gradually crystallized with increasing annealing temperature. in-plane XRD XRD intensity (a. u.) CoFeB(110) MgO[100]//CoFeB[110] and MgO[110]//CoFeB[100]. 400ºC 360ºC 300ºC MgO(200) 270ºC 30 40 50 2θχ (°) 60 MTJs with CoFeB(100)/ MgO(100)/CoFeB(100) structure are gradually formed with increasing annealing temperature. → suggested to be a dominant factor for the increase of MR ratio with increasing annealing temperature. Why MR ratio is degraded at annealing temp. of 400°C ? as-deposited 360°C 400°C (MR=213%) (MR=169%) Diffusion of Mn from PtMn layer to the free layer? or Mixing between CoFeB and Ta capping layer? Summary 2 Mechanism of Huge TMR ratio in CoFeB/MgO/CoFeB MTJs Relatively high annealing temperature is necessary to obtain huge TMR ratio. The annealing temperature is necessary to obtain CoFeB(100)/MgO(100)/CoFeB(100) crystal structure. (although we start with a-CoFeB/MgO(100)/a-CoFeB!) The use of CoFeB ferromagnetic electrode provide us with robust deposition process. Outline Introduction Sample preparation Growth mechanism of MgO barrier layer Mechanism of Huge TMR ratio in CoFeB/MgO/CoFeB MTJs Applicability of MgO-based MTJs for TMR head Challenge to low-RA junction 300 ANELVA/AIST Hitachi/Tohoku univ. (CoFeB/MgO/CoFeB) MR ratio [%] (CoFeB/MgO/CoFeB) ◆ ● ANELVA/AIST Target region of magnetic read heads 200 (CoFeB/MgO/CoFeB) ◆ Past reports on MgObased MTJ ◆ ANELVA/AIST AIST (Fe/MgO/Fe) ◆ AIST (CoFeB/Mg/MgO/CoFeB) Presented at Intermag2005 100 IBM (CoFe/MgO/CoFeB) ■ (Fe/MgO/Fe) ◆ 0 0.1 1 4 10 100 RA [Ω-µm2] 1000 10000 100000 Insertion of ultra-thin Mg layer Inserting a metallic Mg layer between CoFeB reference layer and MgO tunnel barrier may improve TMR properties because the Mg layer may protect the CoFeB surface from contamination by adsorption of residual gases and physical damage by sputtered MgO particles. Co60Fe20B20 T. Lin and D. Mauri US patent 6,841,395 B2 This study MgO Metallic Mg layer Deposit metallic Mg layer Deposit metallic Mg layer Deposit oxygen doped metallic Mg layer Directly deposit MgO layer from sintered MgO target Co60Fe20B20 Perform oxygen treatment RA vs. MR (after Mg insertion) 250 without Mg MR ratio [%] 200 with 4Å Mg 150 yMR : 100% yRA : 2.0 Ω-µm22 ytMgO MgO : 8Å 100 50 0 1 10 100 1000 10000 RA [Ω-µm2] y Below 6 Ω-µm2 RA, MR ratio was improved by inserting a 4 Å Mg layer. y MR ratio as high as 100% has been achieved at low RA of 2.0 Ω-µm2. MR curve of patterned element Size: 0.1 × 0.18 µm2 Anneal: 360°C/8kOe/2h 160 MR ratio [%] 140 MR: 138% RA: 2.4 Ω-µm2 Co60Fe20B20 100 MgO (8Å) Mg (4Å) 80 Co60Fe20B20 120 60 40 MR ratio of MTJ using Al-Ox barrier 20 0 -1000 0 1000 H [Oe] K. Tsunekawa, D. D. Djayaprawira, et al., Appl. Phys. Lett. 87, 072503 (2005). XRD (θ-2θ) profile for CoFeB/(Mg)/MgO/CoFeB films MgO(200) X-ray intensity [cps] 6000 5000 4000 CoFeB (30Å) MgO (30Å) Mg (4Å) CoFeB (30Å) 3000 2000 CoFeB (30Å) MgO (30Å) CoFeB (30Å) 1000 0 30 40 50 60 2θ [°] XRD result suggests that the thin Mg layer enhances crystallinity of the MgO layer. Possible mechanism MR ratio When MgO layer is thin, (< 11 Å) CoFeB CoFeB CoFeB < CoFeB Mg layer improves the MgO crystalline quality, resulting in high MR ratio Poor crystal growth at the initial layer degrades MR ratio When MgO layer is thick, (> 11 Å) Mg (4Å) CoFeB CoFeB > Mg (4Å) CoFeB CoFeB Fairly good crystallinity, high MR ratio Very good crystallinity, but metallic Mg layer reduces MR ratio Summary 3 Applicability of MgO-based MTJs for TMR head Low RA and huge TMR ratio of MgO-based MTJs can be realized by introducing 4Å of Mg insertion layer before MgO deposition and reducing the MgO thickness to about 8Å (RA:2.4-µm2, MR:138%). MgO-MTJ is the very promising for next generation TMR heads. An Overview of the Benefits and Challenges of Discrete Track Recording Media David Wachenschwanz, Paul Dorsey, Andrew Homola, Wen Jiang, David Treves, Bruce Harper, Norbert Staub, Shoji Suzuki, Henry Nishihira, Crystal Tang, Eric Roddick Komag, Inc. 1710 Automation Pkwy., San Jose, CA Outline Introduction Benefits of Discrete Track Recording (DTR) Media Challenges For Manufacturing DTR Media using Nano-Imprint Lithography (NIL) LMR and PMR DTR Media Structures Flyability Servoing Corrosion Conclusions Diskcon, Sept. 21, 2005 Discrete Track Recording (DTR) Technology DTR Land-Groove Structure Typical land-groove dimensions: Track pitch: 127 to 380 nm Groove depth: 40 to 60 nm Air-bearing Slider with Write & Read Head Data zone radii: 17.65 mm to 46.75 mm 95 mm diameter disk Diskcon, Sept. 21, 2005 Discrete Track Recording (DTR) Technology Sputtered Film Write & Read Head Substrate Write Wide-Read Wide ≥ Land Width Improves SNRmedia > 1 dB Diskcon, Sept. 21, 2005 DTR Design Consideration Due to Manufacturing Cost Considerations: Disk will not be planarized after patterning Due to the well-defined inter-track isolation provided by the grooves between the data lands: Magnetic read track width should be equal to or greater than the data land Magnetic write track width should be equal to or greater than the data land Grooving of the media: Head Air Bearing Must Be Designed To Accommodate Servo Patterns Must Not Change Land-to-Groove Area Ratio Significantly Potential Corrosion Issues Must Be Dealt With Diskcon, Sept. 21, 2005 DTR Disk Benefits Improvement Benefit Eliminate erasure bands Wider read head Reduced servo and drive write-write TMR >1 dB SNRmedia >2 dB SNRelectronic Preformatted servo Disk cost saving by drive maker Relaxed write head physical or magnetic width tolerance Higher head yields Lower head cost Smart CSS/Load unload management Higher drive reliability Improved Overwrite Performance Higher linear bit & track density Higher thermal stability Elimination of side writing/erasure by skewed Perpendicular Recording heads Higher track density Less Bit Curvature Easier to make head Diskcon, Sept. 21, 2005 Residual LF Signal After Overwriting Land Width = 290 nm Groove Width = 250 nm Groove Depth = 44 nm 10 Conventional DTR Residual LF Signal (µV) 8 MWW = 340 nm MRW = 237 nm 6 4 2 0 -500 -400 -300 -200 -100 0 100 200 Cross-Track Position (nm) Diskcon, Sept. 21, 2005 300 400 500 Overwrite vs. Cross-Track Position For DTR and Unpatterned Media 50 Land Width = 290 nm Groove Width = 250 nm Groove Depth = 44 nm HF/LF Overwrite (dB) 40 MWW = 340 nm MRW = 237 nm 30 Land Width 20 DTR Conventional 10 0 -500 -400 Diskcon, Sept. 21, 2005 -300 -200 -100 0 100 200 Cross-Track Position (nm) 300 400 500 Overwriting Process For a Conventional Unpatterned Medium Direction of Medium Travel Diskcon, Sept. 21, 2005 Overwriting Process For a DTR Medium Groove Groove Direction of Medium Travel Diskcon, Sept. 21, 2005 Mastering Of DTR Media Using an R-θ Electron-Beam Recorder Electron-Beam Column Resist-Coated Si Wafer E-beam spot size for current EBR is 40 nm Diskcon, Sept. 21, 2005 Nano-Imprint Lithography (NIL) Processing of Substrate (Disk) Imprint Polymer Ni Stamper NiP Substrate Dry Etch Polymer Wet Etch NiP Disk Strip Polymer Diskcon, Sept. 21, 2005 polymer coating Most Critical NIL Process Step For DTR is Imprinting… Challenges For Imprint Process Minimal Added Cost to the Disk Stamper lifetime ~10,000 cycles Simultaneous double-sided imprint Uniform Imprint Over Usable Disk Surface Alignment: eccentricity < 5 µm Through-put: > 500 pph Cleanliness Diskcon, Sept. 21, 2005 DTR Disk: Substrate Fabrication Process Process Steps Imprint issues Pre-coat disk cleaning Contamination control particles residual resist Polymer coating (dip-spin coater) selection of resist low temp imprint short imprint time Polymer Coating Bake ÎEmbossing (cleanroom press) stamper performance mold release agent compliance durability Plasma etching (mask development) Electro-wet-etching Polymer chemical stripping Stamper Pre-sputter disk cleaning Embossed polymer Diskcon, Sept. 21, 2005 Finished 95mm DTR Disk 380 nm Track Pitch Diskcon, Sept. 21, 2005 Optical Scan of a DTR Substrate Showing Surface Uniformity Diskcon, Sept. 21, 2005 TEM Cross-section of Longitudinal DTR Media (Track Pitch = 380 nm) Magnetic media film stack NiP Disk 100 nm Diskcon, Sept. 21, 2005 TEM Cross-section of Longitudinal DTR Media (Track Pitch = 380 nm) Carbon Overcoat Magnetic Layer Under Layer NiP Substrate Diskcon, Sept. 21, 2005 TEM Cross-section of DTR NiP Substrate With PMR Media Structure Overcoat CoCrPtO Hard Magnetic Layer (~15 nm) Ru (25 nm) Seed Layer Soft Magnetic Layer (200 nm) Substrate (NiP) Diskcon, Sept. 21, 2005 PMR DTR Signal & Noise Spectra 580KFCI 20 Flat Land Groove Head&Electronics 10 580 kFCI 0 580KFCI 10 Flat Land Groove Head&Electronics 0 -10 Spectrum (dB) Spectrum (dB) -10 Flat Land -20 -30 -20 -30 -40 Groove -40 -50 274.5 275 275.5 276 Frequency (MHz) 276.5 -50 H&E -60 0 50 100 150 200 250 300 Frequency (MHz) 350 400 450 500 Noise in the groove is significantly lower, same as head and electronic noise for frequencies > 250 MHz. Low frequency noise could be related to the pickup from the walls. Diskcon, Sept. 21, 2005 277 Groove Effect on Fly Height 800nm groove w d Fly Height Loss (nm). 25 Positive pressure ABS 20 15 10 Negative pressure ABS 5 0 0 10000 20000 30000 Groove cross section (nm²) Diskcon, Sept. 21, 2005 40000 Wobbled Grooves For Position Servo Information f1 f2 f1 f2 f1 Diskcon, Sept. 21, 2005 Spectral Side Bands Due to Groove Wobble Pos=-16uIn.txt -15 f0+f2 Power Spectal Density (dB) Pos=-16uIn.txt f0+f1 20 -20 10 10 00 -25 -10 -10 -30 -20 -20 188 190 192 194 196 198 200 202 -30 -30 -40 -40 -50 -50 0 0 50 100 100 150 200 200 250 Frequency MHz 300 300 350 400 400 f0=165.8MHz f1 = 29.00 MHzÎ λ1 = 726 nm f2 = 26.36 MHzÎ λ2 = 799 nm Write Carrrier Signal or DC-Erase Land Area To Detect Groove Wobble Diskcon, Sept. 21, 2005 Groove Modulation vs. Position E5793L: Land:Groove=1:1 15 Carrier Signal 10 20Log10 Amplitude (dB) 5 0 f0 f0+f1 f0+f2 -5 -10 -15 Sideband Signals -20 -25 -30 -35 -30 -20 -10 0 Write Position (uIn) Diskcon, Sept. 21, 2005 10 20 30 Locating Shifted Sub-locks within One Servo Block 0 1 2 3 4 5 6 Pos=4uIn.txt Pos=1uIn.txt Pos=-4uIn.txt 0.25 0.25 0.25 0.2 0.2 0.2 0.15 0.15 0.15 0.1 0.1 0.1 0 2 3 4 0.05 5 6 0.05 7 0 -0.05 0.05 1 2 3 0 -0.05 -0.05 -0.1 -0.1 -0.15 -0.15 -0.2 -0.2 -0.1 -0.15 -0.2 -0.25 -0.25 0 1 2 3 4 5 Diskcon, Sept. 21, 2005 6 7 8 9 0 1 2 3 4 5 6 7 8 9 -0.25 0 1 2 3 4 5 6 7 8 9 Corrosion Performance of Longitudinal DTR Media Test Conditions: 4 days at 80˚C/80% Relative Humidity Sample A Diskcon, Sept. 21, 2005 Sample B Conclusions Benefits of DTR Media Provide Potential Path For Increasing Areal Density Nano-Imprint Lithograph (NIL) Has Been Used To Achieve Clean and Uniform Patterning Of Discrete Track Recording Media With A Good Prospect To Achieve A Cost-Effective Manufacturing Process DTR Processing Can be Done For LMR and PMR Media Need to Determine Best Manufacturing Path for PMR DTR Media Which Layer To Pattern? Demonstrated Servoing Patterns Compatible with Grooved DTR Media Good Corrosion Performance Obtained on Grooved DTR Media Diskcon, Sept. 21, 2005