Chip-based Ion Sensing

Transcription

Chip-based Ion Sensing
Trends in Micro Nano
5. Dec. 2013
Christian Schönenberger
Department of Physics, University of Basel, Klingelbergstr. 82, CH‐4056, Basel, Switzerland
Sensor
Schönenberger group www.nanoelectronics.ch
wikipedia:
“A sensor (also called detector) converts a measured physical quantity into a signal which can be read by an observer or by an instrument. which can be read by an observer
or by an instrument “
Sensor
wikipedia: A sensor (also called detector) converts a measured physical & chemical quantity
into a signal which can be read by an observer or by an instrument. into a signal which can be read by an observer
or by an instrument
GlucoWatch® Monitor
• fully integrated analytical systems
• portable diagnostic capabilities
portable diagnostic capabilities
(early detection)
• personalized medicine
Sensor










human’s sensorics
we can see we can hear
we can hear
we can smell
we can taste
we can taste
we can feel
we may have pain
we can think (sensor ?)
we have emotions (sensor ?)
we have intuition (sensor ?)
we have intuition (sensor ?)
we may be frightened (sensor ?)
VIBE from
Philips
Chip‐based sensing
Bio‐ / chemical sensor
a device that can detect molecules with some specificity
how can this information
be read ?
be read ?
www.q-sense.com
mechanically
a) mass change (QCM)
b) strain (cantilever)
Affymetrix
y
mechanically
optically
p
y
a)) labelled (DNA
(
chip)
p)
OWLS
mechanically
optically
p
y
a)) labelled (DNA
(
chip)
p)
b) refractive index
c) Plasmonics
BIACORE
be read ?
mechanically
optically
p
y
a)) labelled (DNA
(
chip)
p)
b) refractive index
c) Plasmonics
electrically
a) impedance spectroscopy
b) CV spectroscopy
c) potentiometric (e
(e.g.
g zeta potential)
Potentiometric sensing
FET
Potentiometric sensing
IS-FET
P Bergveld
P.
B
ld / Sensors
S
andd Actuators
A t t
B 88 1–20
1 20 (2003)
Ion Sensitive FET (IS‐FET)
channel conductance ((i.e. threshold))
depends on gate charge
p-channel,
h
l sub-threshold
b th h ld regime
i
-
-
source
-
drain
(source-drain current)
-
( t potential)
(gate
t ti l)
p-channel,
h
l sub-threshold
b th h ld regime
i
-
source
drain
-
-
-
-
( t potential)
(gate
t ti l)
e.g. heparime binding on protamie
p-channel,
h
l sub-threshold
b th h ld regime
i
-
-
source
drain
-
-
-
-
SHIFT
( t potential)
(gate
t ti l)
IS FET for pH sensing
Honeywell: Durafet III
pH sensors
p
Endress+Hauser :CPS441 and CPS441D
taken from an application note
P. Bergveld / Sensors and Actuators B 88 1–20 (2003)
Dental Application
• Food components that lower pH of dental plaque cause caries
p recording of dental plaque
pH g
p q
P = paraffin chewing
S = rinse with sucrose 10%
U U = rinse with urea 3 %
rinse with urea 3 %
H. H. van den Vlekkert, Sensors and Actuators, Vol 14, p. 165 (1988)
ISFET pH catheter
chips
K. Bedner et al.
chip
48 silicon nanowires/sample
top width: 100nm – 1µm
NW
DRAIN
3 SOURCE
CONTACTS
SU-8
microchannel
HfO2, Al2O3
Wtop
S
D
85nm
SiO2
5
5µm
silicon
K. Bedner et al.
electrode fabrication
step 1.
1
p-type (100) SOI
80nm
145nm
Si
SiO2
step 2.+3.
2 3
Weff = Wtop + 2Wwalls
~10nm
Si handle wafer
wire length:6um
width: 100nm‐1um
width: 100nm‐1um
step 4.+5.
100nm
step 6.+7.
metal
PMMA
step 11.to14.
SU-8
silicon
silicon oxide
ALD oxide
ALD oxide
resist
metal
epoxy
Kristine Bedner et al.
70 nm
300 nm
up-scaling
SiO2 mask
~ 180nm
NW
Si
Si
Si
Si
K. Bedner et al.
Microfluidics
Devices location in µ-fluidic channels
in the lab in operation
NW-ISFET “quality”
(low p‐doped wires in accumulation with
p+‐implanted and alloyed contacts)
pH response & sensitivity
9.0
7.5
width =1m
8
NW 1
NW 2
4
2
0
pH 7
Vbg=-6V
Vsd=0.1V
-0.5
0.0
0.5
(V)
VrefVref(V)
1.0
1.5
10
-6
1.5
10
-7
0.0
10
-8
8
10
-9
10
-10
2.0
-6
pH 3, 5, 7, 9
10
-7
10
-8
Vbg=-6V
Vsd=0.1V
10
-9
(S)))
GG (S
GG(S)
)
(S)
3.0
10
G (S)
G
(S)
GG((S)
(S)
120mV/dec
10
4.5
-5
6
-5
120mV/dec
6.0
reproducibility
10
width =1m
-0.5
0.0
0.5
Vref V(V)
(V)
1.0
1.5
10
2.0
ref
with good ALD oxides, HfO2 and Al2O3
always reach maximum sensitivity of
~ 60 mV/pH
-10
NW-ISFET “quality”
Stability measurements 5.5 days
0.235
0.230
0.225
HfO2 gate oxide
pH 6 buffer solution
V th [V]
0.220
0.210
reproducibility
width =1m
8
0.215
NW 1
NW 2
10
-5
10
-6
0.205
0.200
0
120mV/dec
4
2
0
pH 7
Vbg=-6V
Vsd=0.1V
-0.5
0.0
0.5
1.0
1.5
10
-7
10
-8
8
10
-9
10
-10
2.0
24
48
72
96
120
Time (h)
G (S)
G
(S)
GG((S)
(S)
6
FinFET sample
p ((EPFL)) 8nm HfO2 g
gate ox
pH6 buffer solution
• 4 different nanowires
• Max. Drift ~2mV/day
• differential drift ~ 0mV
(V)
VrefVref(V)
S. Rigante et al.
Genome sequencing
ion-torrent
can one measure something else ?
oxide surface highly sensitive to protons  Nernst limit
sensitivity
iti it tto other
th iions iis usually
ll very smallll !
if there are other reactions on the surface that can compete with the
de protonation and proton addition at OH sites,
de-protonation
sites the pH sensitivity may be
reduced
NW with floating gate
purple = Au on top
6µm
M. Wipf et al. ACS Nano 2013
Au coated NW: Selective Sodium
Sensing
M. Wipf et al. ACS Nano 2013
Results
1. maximum sensitivity (Nernst limit) can be achieved (Al2O3 and HfO2)
2. oxide surfaces (Al2O3 and HfO2) can be highly selective to protons
( ld
(yielding ideal pH sensor up to buffer conc. of 10 mM) d l
b ff
f
)
3. maximum sensitivity also for the narrowest nanowires
4. highest resolution in concentration best for wide wires
5. differntial measurement greatly improves stability
6. full passivation possible  “ideal” reference electrode
7. good sensitivity with high selectivity to other ions can be achieved h
d
8. multi‐ion sensing is promissing
System Architecture
• 16 nanowires can be interfaced in parallel
• voltage across each nanowire is kept constant, and the current flowing through is measured
•Two different analog‐to‐digital converter architectures are used (12 bits resolution)
• Current range: 1 nA to 5 μA
Paolo Livi et al.
33
CMOS readout
• Power consumption: 35 mW
• I2F resolution:
• 8 bits (50 pA -1 μA range)
g )
• 10 bits ((10 nA - 400 nA range)
• Sigma-Delta resolution:
• 12 bits in the range ±2 μA
Paolo Livi et al.
34
34
System Architecture
VDS = 200 mV
Nanowire Sensor Chip
sigma‐delta modulator read‐out of 4 Si‐NW, 9.‐10. Nov. 2011
CMOS Readout Chip
p
Paolo Livi et al.
35
Thanks to....
Uni Basel
physics
Christian
Schönenberger
EPFL
Oren
Mathias Wipf
Wangyang Fu
Alexey Tarasov
Knopfmacher
Michel Calame
Ralph Stoop
PSI
Adrian Ionescu
Mohammad
N j
Najmzadeh
d h
Sara Rigante
Jens Gobrecht Kristine Bedner
Birgit
Päivänranta
Päi
ä
t
Vitaliy
Guzenko
G
k
Christian
D id
David
Renato
Minamisawa
Mi
i
Uwe Pieles
Jolanta Kurz
UniBas
pharma
ETHZ
Janos Vörös
Bernd
Dielacher
Robert
MacKenzie
Beat Ernst
Arjan Odedra Floriian Binder
FHNW
D-BSSE
Sensirion
Andreas
Hierlemann
Paolo Livi
Yihui Chen
Matthias Sreiff
36

Chip-based Ion Sensing

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