doc05_Mark Goeke_SCREEN SPE
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05_Mark Goeke_SCREEN SPE
Next Generation Track Process for EUVL, DSA, NIL and E-Beam SCREEN SPE Germany GmbH Mark Goeke Product Manager 1 SEMICON Europe 2015 Lithography Session – Building Solutions October 8, 2015 Next Generation Track Process for EUVL, DSA, NIL and E-Beam 2 SEMICON Europe 2015 Lithography Session – Building Solutions October 8, 2015 Product Portfolio (300mm) Litho. Track Coat/Develop Wet Clean Single Wfr SU-3x00 Wet Clean Batch Flash Anneal Scrubber Clean Laser Anneal FC-3100 LA-3000F SS-3x00 3 SEMICON Europe 2015 DT-3000 Lithography Session – Building Solutions LT-3100 October 8, 2015 Product Portfolio (300mm) Litho. Track Coat/Develop Wet Clean Single Wfr SU-3x00 Wet Clean Batch Flash Anneal Scrubber Clean Laser Anneal FC-3100 LA-3000F SS-3x00 4 SEMICON Europe 2015 DT-3000 Lithography Session – Building Solutions LT-3100 October 8, 2015 Committed to investing in Next Gen. Litho. EUV Imm. ArF & EUV 2011 Partner imec 2012 ASML Nikon Imm. ArF EUV 5 SEMICON Europe 2015 Lithography Session – Building Solutions October 8, 2015 Committed to investing in Next Gen. Litho. EUV Imm. ArF & EUV 2011 Partner imec E-Beam & DSA 2012 ASML 2013 Nikon LETI Mapper Imm. ArF EUV E-Beam DSA 6 SEMICON Europe 2015 Lithography Session – Building Solutions October 8, 2015 Committed to investing in Next Gen. Litho. R&D Collaboration Investments 2011-2015 JPY 5,000 Million ( >US$ 40 Million ) EUV Imm. ArF & EUV 2011 Partner imec E-Beam & DSA 2012 ASML 2013 Nikon LETI 2015 450mm Mapper G450C Imm. ArF EUV E-Beam DSA 450mm 7 SEMICON Europe 2015 Lithography Session – Building Solutions October 8, 2015 Material Development for Next Gen. Litho. Company EUV (E-Beam) DSA Imm. ArF Merck / EMD (p.k.a. AZ) Δ Rinse / TC ○ ○ NTD Shrink + Metal HM ○ ○ Nega. Resist Nega. Resist Nissan Chem. Δ UL / TC Δ Underlayers DDRM JSR ○ Resist / TC ○ ○ + Underlayers + Metal HM TOK ○ ○ ○ Inpria ○ FujiFilm E.M. Arkema SEMICON Europe 2015 Negative Tone Processes + Metal HM ○ NIL Transpin Underlayer Canon N.T. 8 Other Lithography Session – Building Solutions October 8, 2015 Current view on Next Gen. Litho. 9 2013 2014 2015 2016 Immersion New High RCA Resist Qual. Multi-patterning 200wph+ “Zero Defect” Litho. Process Complementary EUV / DSA integration DSA Materials R&D DSA process defect reduction qual. DSA integrated layer Pilot Line Testing PS-b-PMMA Pilot Production Start EUV EUV R&D 5~10wph EUV Process Dev. 10~20wph EUV Pilot Line 30~50wph EUV Ready HVM 50~80wph E-Beam E-Beam in-line @ CEA-LETI Beta Tool Start-Up NIL ----- ----- 300mm Beta Qual. ~1wph 300mm Beta Tool 5-10wph Prototype Product 1~5wph Cluster Tool Pilot 30-60wph SEMICON Europe 2015 Lithography Session – Building Solutions October 8, 2015 Immersion ArF Multiple Patterning YIELD CHALLENGE Ideal Case Resist Resist SiARC SiARC Bottom Layer Bottom Layer SiO2 Si SiO2 Si SiO2 Si SiO2 Si Resist Resist Litho SiARC SiARC Exposure & Develop Bottom Layer Bottom Layer SiO2 Si Si SiO2 Si Si SiO2 Si SiO2 Si 1st Litho Exposure & Develop 1st Hard-Mask Etch 2nd 2nd Hard-Mask Etch Trench Etch 10 Defects in coated films SEMICON Europe 2015 Si Lithography Session – Building Solutions Si 1st Litho defect 2nd Litho defect 1st Litho defect + nd 2 Litho defect Double patterning makes Defect density twice as hard to achieve Yield October 8, 2015 CIP Coat Dispense Valve “Clean by Design” Defect Extermination for YIELD @ 26nm with minimal dispense line solvent purging Valve Valve 11 SEMICON Europe 2015 Lithography Session – Building Solutions October 8, 2015 In-situ Analysis COAT Dispense Camera Normal Abnormal Captured Image Images were taken by high-speed video camera with 3000 frames / second during wafer rotation. Anomaly “droplet” observed for abnormal coat wafer. 12 SEMICON Europe 2015 Lithography Session – Building Solutions October July 15, 8, 2015 Non-Uniformity Mechanism Surface image Film thickness 2nm (~3% of FT-mean) Viscosity change in droplet Droplet blends into the film Remains in film as non-uniform spot Extra droplet caused local viscosity change and abnormal film thickness shows as non-uniform spot. 13 SEMICON Europe 2015 Lithography Session – Building Solutions October 8, 2015 Coat Dispense Monitoring (Bubbles in Line) Air vent Resist bottle DCV Air vent Filter Trap tank IGS Feed Pump Dispense Pump Pressure monitor Preparing Dispense Filtering Detection sample 14 SEMICON Europe 2015 Data in case of bubble in tube Lithography Session – Building Solutions October 8, 2015 In-situ Analysis DEVELOP Process for EUV Wafer Map Captured Image Resist D Defects :19 D.D :0.03/cm2 Resist E Defects :107807 D.D :190.04/cm2 KEY OBSERVATIONS • Drying condition for each resist visibly different. • No “blob” defects for Resist D Concentric drying occurs • Many “blob” defects for Resist E Partial drying within exposure die-by-dye 15 SEMICON Europe 2015 Lithography Session – Building Solutions October 8, 2015 ‘Blob’ Defect Mechanism in Develop (EUV) Resist D Resist B Resist C Resist E Wafer Map Die Map 1. High-Speed Camera Image 2. SEM Image No ‘Blob’ defects observed 1. Correlation between die map and rinse remaining pattern confirms “blob” defect results from non-uniform wafer drying of rinse. 2. “Blob” defects appear as typical water marks in SEM image. 16 SEMICON Europe 2015 Lithography Session – Building Solutions October 8, 2015 with in-line ASML NXT:1950i ASML NXE:3100 was <10m next bay for off-line EUV exposure & new NXE:3300 is neighbor 17 SEMICON Europe 2015 Lithography Session – Building Solutions October 8, 2015 Reducing EUV Microbridge Defects Defect Map & SEM Image Bottom bridge 4.03 /cm2 Materials Process Under Layer A Under Layer B Resist A Resist B Develop: Static Dynamic Puddle Combine best materials & track develop process SPIE AL2015, 9422-83, SCREEN, “Improving Process and System for EUV Coat-Develop Track” 18 SEMICON Europe 2015 Defect Map Bottom-bridge Lithography Session – Building Solutions 0.03 /cm2 October 8, 2015 EUV process CD Uniformity (NXE:3100) Resist A Resist C Resist C UL B UL C Resist B CD Map 25.0 29.0 25.0 29.0 28.0 31.0 29.0 32.0 SEM Image CD mean (nm) 3sigma (nm) (nm) 27.2 0.77 LWR 6.25 26.5 0.56 LWR 5.89 29.5 0.91 LCDU 3.74 30.7 0.99 LCDU 3.12 P-RE-10 International Symposium on Extreme Ultraviolet Lithography October 27, 2014, Washington, D.C. 19 SEMICON Europe 2015 Lithography Session – Building Solutions October 8, 2015 LWR Improvement for EUV process Resist Resist B by UV Cure Resist C by Solvent Vapor Cure Initial Cure Initial Cure LWR (nm) 6.26 5.42 5.70 4.37 Improvement rate -- 13.42% 23.33% CD (nm) 35.60 33.31 35.88 37.17 Process SEM Image SPIE AL2015, 9422-83, SCREEN, “Improving Process and System for EUV Coat-Develop Track” 20 SEMICON Europe 2015 Lithography Session – Building Solutions October 8, 2015 Litho. E-Beam E-Beam Exposure niche market development for rapid prototype IC FX-1200 E-Beam Exposure Tool 1st full 300mm wafer exposure <1 hour track in-line integration Lithography Workshop, June 2015, “MAPPER: Progress towards a manufacturing system” 21 SEMICON Europe 2015 Lithography Session – Building Solutions October 8, 2015 Litho. E-Beam & DSA Collaborations E-Beam Exposure niche market development for rapid prototype IC Developing “All Track” DSA patterning N10 N7 process DSA E-Beam FX-1200 E-Beam Exposure Tool 22 SEMICON Europe 2015 track in-line integration Via Pattern CD shrink Lithography Session – Building Solutions Via Doublets with 1:1 pitch October 8, 2015 New: DSA process ready track 450mm 300mm Imm. ArF + DSA single-loop track “All Track” DSA coat & develop process SOC, SiARC Coat Resist Coat Nikon Expose TMAH Develop UV Cure DSA C/H shrink 100nm Via Pattern CD shrink 23 SEMICON Europe 2015 Lithography Session – Building Solutions Via Doublets with 1:1 pitch October 8, 2015 450mm imm. ArF Lithocell established at Global 450mm Consortium (G450C) at SUNY's NanoCollege selects SCREEN immersion ArF lithography track Nikon Announces 450 mm ArF Immersion Scanner at SUNY Polytechnic Institute is Transitioning to Wafer Patterning February 24, 2014 (Press Release); January 2015 install start July 8, 2015 (Press Release); Under installation SOKUDO DUO 450mm coat/develop track system has been chosen by the Global 450mm Consortium (G450C), headquartered at the SUNY College of Nanoscale Science and Engineering (CNSE) in Albany, New York, for immersion ArF lithography and Directed Self-Assembly (DSA) applications. Nikon Corporation (Kazuo Ushida, President) announced the world’s first ever 450 mm immersion scanner, the Nikon NSRS650D, has been installed at SUNY Polytechnic Institute’s Colleges of Nanoscale Science and Engineering (SUNY Poly CNSE) and is transitioning to wafer patterning. http://www.screen.co.jp/eng/press/NR140224E.html displayed during 24 SEMICON Europe 2015 https://www.nikonprecision.com/press-releases/nikon-announces-450-mm-arfimmersion-scanner-at-suny-polytechnic-institute-is-transitioning-to-waferSEMICON West, July 2015 patterning/ Lithography Session – Building Solutions October 8, 2015 Canon Nanoimprint Single Tool (~10wph) FPA-1100 NZ2 4 Tool Cluster (40~60wph) Canon is Developing Semiconductor Lithography Equipment Employing Nanoimprint Technology, February 23, 2015 http://www.usa.canon.com/cusa/about_canon?pageKeyCode=pressreldetail&docId=0901e02480e70574 2015 Lithography Workshop, June 2015 http://lithoworkshop.org/2015-Lithography-Workshop-Program-Book-v1-2.pdf 25 SEMICON Europe 2015 Lithography Session – Building Solutions October 8, 2015 Mapper Lithography E-Beam Single Tool (1-10wph) FX-1200 10 Tool Cluster (50-100wph) High Throughput Maskless Lithography, October 2011 Lithography Extensions Symposium http://www.sematech.org/meetings/archives/litho/euvl/10157LE/pres/Marcel%20van%20Kervinck.pdf 26 SEMICON Europe 2015 Lithography Session – Building Solutions October 8, 2015 E-Beam “Small” Track ~25wph PHP PQHH PQHH AHL PQBH PQBH CP E-Beam Exposure Module 10~20wph CP CP CP SD (TMAH) BSS-D ( 200mm / 300mm ) CP PA SC (Resist) SC (SiArc) SC (SOC) 27 SEMICON Europe 2015 Lithography Session – Building Solutions CP SC (SOC) PQHH CP SC (SiArc) PQHH CP SC (Resist) PQBH BSS-D CP PA Expose BSS-D PQBH CP SD (TMAH) PHP October 8, 2015 300mm Visions on Next Gen. Lithography in 2020 2015 Immersion 28 2016 EUV / DSA “Zero Defect” Complements Process 2017 2018 2019 2020 >250wph & SAQP HVM >275wph >300wph (?) DSA DSA layer Pilot Line PS-b-PMMA 1st HVM layer PS-b-PMMA HVM Expands High Ӽ Pilot Intro. EUV 1st Pilot Line 30~50wph Pilot Ramp 50~80wph 1st HVM Line 60~100wph HVM Ramp >80wph >100wph >125wph E-Beam Beta Qual. ~1wph Prototype 1~2wph Pilot Line 2~5wph Pilot Ramp >5wph Cluster Tool 50~80wph HVM 60~100wph NIL Beta Tool 5-10wph Cluster Tool 30~60wph Pilot Line 50~80wph HVM Start 50~80wph HVM Ramp >80wph HVM Ramp >100wph SEMICON Europe 2015 Lithography Session – Building Solutions 1st High Ӽ HVM layer High Ӽ HVM October 8, 2015 29 SEMICON Europe 2015 Lithography Session – Building Solutions October 8, 2015 30 SEMICON Europe 2015 Lithography Session – Building Solutions October 8, 2015
