Photodiodes • APDs • Photoreceivers • LRF Receivers Elec

Transcription

Photodiodes • APDs • Photoreceivers • LRF Receivers
Electro-Optical Instruments
2 015 C ATA L O G
V.5
Voxtel strives to be the industry’s first-choice solution for
electro-optical devices, subsystems, and instrumentation.
Voxtel is at the forefront of technology for high-sensitivity infrared sensing. Our
products are providing our customers with improved solutions for a variety of
commercial, scientific, and military sensing applications, and are providing the
performance to make new applications possible.
The company was founded in 1999 with a strong focus on innovation and on
bringing advanced electo-optics technologies to market, quickly and efficiently.
We anticipate and translate application needs into innovative and cost-effective
solutions, which we deliver to the market on time and with exceptional quality,
allowing both Voxtel and our channel partners an optimal return on investment
and rate of growth.
2
©2015 Voxtel, Inc.
Voxtel Headquarters:
15985 NW Schendel Ave. #200
Beaverton, OR 97006
LEGAL DISCLAIMER
Information in this catalog is subject to change without notice. It may contain technical inaccuracies or typographical errors.
Voxtel, Inc. may make improvements and/or changes in the products described in this information at any time, without notice.
Voxtel, Inc. reserves the right to dicontinue or change product specifications and prices without prior notice. Inadvertent errors
in advertised prices are not binding on Voxtel, Inc.
INFORMATION IN THIS CATALOG IS PROVIDED “AS IS” WITHOUT WARRANTY OF ANY KIND, EITHER EXPRESS OR IMPLIED, INCLUDING,
BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR APPLICATION,
OR NON-INFRINGEMENT.
Voxtel Catalog, rev. 06, 8/2015 ©
Voxtel makes no warranty or representation regarding its products’ specific application suitability and may make changes to the products described without notice.
Contents
APD Product Guide .
Voxtel APDs.
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7
Introduction
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Product Series
7
Responsivity vs. Noise
9
Comparison Table
10
APD Product Listings .
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APD Die and Submounts
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Packaged APDs
22
APD Photoreceivers
36
APD Receiver Support Electronics Modules
51
APD Laser Rangefinder Receivers
52
APD Laser Rangefinders
56
References.
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63
APD Product Guide
APD Die
Part #
Description
Packaged APDs
Page #
Part #
Bare APD die
Deschutes FSI™
Description
Page #
APD in hermetic TO-46 can
VFI1-DAZA
25-µm dia.
13
VFI1-DCAA
25-µm dia.
23
VFI1-JAZA
75-µm dia.
14
VFI1-JCAA
75-µm dia.
24
VFI1-NAZA
200-µm dia.
15
VFI1-NCAA
200-µm dia.
25
APD with 3-stage TEC in hermetic TO-8 can
VFI1-JKAB
75-µm dia.
26
VFI1-NKAB
200-µm dia.
27
APD Die on submount
Deschutes BSI™
VFC1-EBZA
30-µm dia.
16
VFC1-JCAA
75-µm dia.
28
VFC1-JBZA
75-µm dia.
17
VFC1-NCAA
200-µm dia.
29
VFC1-NBZA
200-µm dia.
18
4
VFC1-JKAB
75-µm dia.
30
VFC1-NKAB
200-µm dia.
31
APD Die on submount
Siletz™
VFP1-EBZA
30-µm dia.
19
VFP1-JCAA
75-µm dia.
32
VFP1-JBZA
75-µm dia.
20
VFP1-NCAA
200-µm dia.
33
VFP1-NBZA
200-µm dia.
21
VFP1-JKAB
75-µm dia.
34
VFP1-NKAB
200-µm dia.
35
Notes on APD Die and Packages
Deschutes BSI™ and Siletz™ APDs are backside-illuminated devices that are provided on flip-chip submounts,
ready for wirebonding.
Packaged APDs are available standard with AR coating, and are optionally available with a variety of coatings
and lenses, as well as fiber coupling options for the Deschutes BSI™ and Siletz™ series. We look forward to your
inquiries on custom orders.
APD Product Guide
APD Photoreceivers
Part #
Bandwidth
Description
Page #
Window-coupled Receivers in hermetic TO-8 can
RDI1-NJAF
200 MHz
200-µm dia. APD
38
RDI1-JJAF
580 MHz
75-µm dia. APD
39
Deschutes FSI™
Deschutes BSI™
RYC1-NJAF
200 MHz
200-µm dia. APD
40
RDC1-NJAF
300 MHz
200-µm dia. APD
41
75 µm dia. APD
43
RIC1-JJAF
2 GHz
Fiber-coupled Receivers, TO-8 package
RIC1-JJQF
2 GHz
62.5/125 µm FO, others available
44
RIP1-NJAF
RIP1-JJAF
Siletz™
1 GHz
2.1 GHz
200-µm dia. APD
45
75-µm dia. APD
46
Fiber-coupled Receivers, TO-8 package
RIP1-JJQF
2.1 GHz
62.5/125 µm FO, others available
47
Ball-lens-coupled Receivers, TO-46 package
R2P1-JCAF
1.5 GHz
300-µm dia. (effective) APD
48
Notes on Photoreceivers
A variety of custom options and optical fiber connections are available, and we continue to add standard
products to our photoreceiver lines. We look forward to your inquiries on custom orders and new products.
Many customers who order our photoreceivers use our APD Receiver Support Modules for fast and easy integration into their laboratory tests and product prototypes. See page 51 for more information on our support
modules.
5
APD Product Guide
APD Laser Rangefinder Receivers
Part #
Bandwidth
Description
Page #
ROX™ Rx Series
RVC1-JIAC
100 MHz
LRF Receiver
w/ 75-μm Deschutes BSI R-APD
54
RVC1-NIAC
100 MHz
LRF Receiver
55
APD Laser Rangefinders
Part #
6
ROX™ OEM
Series
ROX™ µLRF
Series
Bandwidth
Description
Page #
EVKE-NABC
100 µJ
Eye-safe LRF device
w/ 200-µm Deschutes BSI R-APD
57
FVKE-NCBC
100 µJ, 3 km
Eye-safe LRF module
61
Notes on Laser Rangefinder (LRF) Receivers
ROX™ performance allows system cost advantages by reducing laser power requirements, which also reduces
system size, weight, and power.
The ROX Rx series of high-sensitivity LRF receivers (Rx) integrates Voxtel’s high-performance APDs, customdesigned CMOS application specific integrated circuits (ASICs), and processing circuits to provide flexible
system integration and reliable performance, all in a small TO-8 package. We look forward to your inquiries
on custom orders.
Voxtel APDs — Introduction to
Avalanche Photodiodes
Voxtel’s avalanche photodiodes (APDs) offer superior response and linear-mode, low-light-level detection
capabilities that conventional telecommunications APDs and Geiger-mode APDs can’t offer.
Customers with applications that are presently served by NIR photodiodes or low-gain telecom APDs will often
prefer the Deschutes FSI™ or Deschutes BSI™ APDs and photoreceivers for their modest price and low-noise
performance at gains up to M = 25. A variety of high-performance and low-light-level applications are best
served by our Siletz™ line of high-gain, high-responsivity products.
Voxtel’s single-element devices are available as bare die, on submounts (for our backside-illuminated products), in hermetic packages, and integrated into photoreceivers, with a variety of options for packaging and
optical input.
Voxtel’s APD Product Series
Voxtel produces a number of high-performance InGaAs APDs, and each is best suited for a particular range
of applications. This guide discusses the differences between Voxtel’s products and related products for NIR
detection, as well as the differences among Voxtel’s product lines.
Silicon vs. Voxtel’s InGaAs APDs
Voxtel’s APDs are replacing silicon APDs in many applications. Silicon APDs are typically used for the 300–
1100 nm spectral band, while InGaAs APDs normally cover the 900–1700 nm band. Their response overlaps in
the 900–1100 nm spectral region, which includes the ubiquitous 1064 nm Nd:YAG solid-state laser line that is
used in many systems for range finding and target designation.
Voxtel’s InGaAs APDs are often an attractive alternative to silicon APDs in designing new systems where a fast
signal rise time is required, and have served many users of silicon APDs in migrating to eye-safe systems at e.g.
1550 nm while maintaining backwards compatibility with legacy 1064 nm illuminators. However, the detector
specifications can be considerably different for the two types of APDs, so depending on the application, it may
not be feasible to use an InGaAs APD as a drop-in-replacement for legacy systems using a silicon APD.
Voxtel’s InGaAs APDs are often the best choice for low-light-level and/or high-bandwidth applications, though
understanding the differences between our detectors is important in order to choose the right Voxtel APD for
a particular application.
7
Choosing a Voxtel APD: Three product lines
Initial considerations: FSI vs. BSI spectral response and mechanical differences
Voxtel sells three InGaAs APD product lines: the Deschutes FSI™, Deschutes BSI™, and Siletz™ series. The
Deschutes FSI™ series of APDs are front-side-illuminated (FSI), while the Deschutes BSI™, and Siletz™ series
APDs are back-side-illuminated (BSI). The most important difference between FSI and BSI configuration is that
the FSI APDs are able to absorb wavelengths below 950 nm, but for applications at 950 nm and above, the BSI
APDs offer higher spectral responsivity and lower detector capacitance.
Voxtel’s BSI APDs are supplied on flip-chip ceramic submounts, ready for wire bonding. The submount
increases footprint and height, but also reduces parasitic capacitance between the BSI APD’s submount bond
pads relative to the bond pads situated directly on an FSI APD. Also, all of Voxtel’s fiber-coupled assemblies
are designed for use with our BSI APDs.
For these reasons, our Deschutes FSI™ line is preferred by customers who require spectral response superior
to silicon in the ~800–950 nm range, or who require our smallest APD.
Excess Noise Comparisons
Competitor’s APD
Voxtel Deschutes FSI™
30
Excess Noise Factor (F)
8
k = 0.40 k = 0.20
k = 0.02
Voxtel Deschutes BSI™
20
Voxtel Siletz™
Voxtel Siletz UHG™
10
k=0
1
1
10
100
1000
Gain (M)
Measured excess noise factor vs. gain for Voxtel’s APDs and competitor’s APD (log scales), including McIntyre
excess noise factor model for various impact ionization ratios k.
Voxtel’s APD Product Series
Responsivity vs. noise in high-performance applications: Deschutes BSI™ vs. Siletz™
The Deschutes BSI™ and Siletz™ lines are preferred for applications requiring the highest possible sensitivity
for high-speed, low-light level applications that cannot be served by PIN photodiodes or Geiger APDs. These
high-gain-bandwidth products address a balance of tradeoffs for engineering NIR systems in high-speed,
weak-signal regimes that include cutting-edge applications in 3D imaging (including eye-safe LIDAR), longrange optical communications, and science-grade NIR detection.
The choice of a Deschutes™ or Siletz™ APD depends on the other noise sources in the planned receiver system.
The Deschutes BSI™ line offers a high-quality APD with superior response relative to competing commercial
InGaAs APDs, as well as performance superior to InGaAs PIN photodiodes in most conditions. Siletz™ APD
products offer superior avalanche gain and low excess noise factors, with the tradeoff of higher dark current.
These products are the most effective in high-performance applications where higher system noise is unavoidable; in these conditions, high gain is needed and the APD’s additional noise contribution is less important.
Because faster systems typically require the use of noisier amplifiers, the Siletz™ APD is optimal for highbandwidth NIR sensing.
75-µm
200-µm
Deschutes BSI™
Siletz™
PIN
100
10
1 GHz
1.7 GHz
2.7 GHz
580 MHz
165 MHz
1
0.001
0.01
0.1
1
Noise Equivalent Power [fW/Hz1/2]
Noise Equivalent Power [fW/Hz1/2]
PIN
10
Deschutes BSI™
Siletz™
100
9
10
1 GHz
1.7 GHz
2.7 GHz
580 MHz
165 MHz
1
0.001
TIA Noise [pA/Hz ]
0.01
0.1
1
10
TIA Noise [pA/Hz ]
1/2
1/2
System noise vs. transimpedance amplifier (TIA) noise and photodetector selection. Calculated noise
levels and approximate TIA noise regimes in which each product type is most sensitive. Noise levels and
rated low-capacitance speeds* of a few commercial TIAs are marked on the x-axis to illustrate the tradeoff
between speed and amplifier noise. See also these Voxtel photoreceiver products:
Deschutes BSI™ RYC1-NJAF, 200 MHz
p. 40
Siletz™ RIP1-NJAF, 1 GHz
Deschutes BSI™ RDC1-NJAF, 300 MHz
p. 41
Siletz™ RIP1-JJAF, -JJQF, 2.1 GHz
Deschutes BSI™ RIC1-JJAF, -JJQF, 2 GHz
p. 45
pp. 46, 47
pp. 43, 44
*Combinations of these TIAs and Voxtel APDs may not operate at the full rated speed of the TIA, which is usually quoted for a PIN photodiode. In
particular, the higher capacitance of 200-µm APDs reduces receiver speed considerably.
Voxtel’s APD Product Series — Comparison Table
The following table provides typical specifications for Voxtel’s three series of APD products, to aid you in
choosing the series that may best fit your needs. More information can be found on the following pages, and
in the listings for individual products; see the Product Guide on pages 4 and 5.
Deschutes
FSI™
Deschutes
BSI™
Siletz™
Min. suggested
<800 nm
950 nm
950 nm
Typical range
800 to
1550 nm
1064 to 1550 nm
1064 to 1550 nm
Max. suggested
1750 nm
1700 nm
1700 nm
1
1
1
5–20
5–20
5–40
Maximum
20
20
50
λ = 1550 nm
7.2
10.1
10.1
λ = 1064 nm
6.8
7.3
7.3
keffective [A]
~0.2
~0.2
~0.02
M = 10
3.4
3.4
2.0
M = 15
4.3
4.3
2.2
M = 20
5.2
5.2
2.3
M = 50
—
—
3
M = 1000
—
—
—
Dark Current at M = 1
of 75-µm APD, [nA]
0.56
Spectral Range,
λ
Minimum
Operating Gain,
M
10
Responsivity
at M = 10, [A/W]
Excess Noise
Factor,
F(M, k)
Typical range
Capacitance of 75-µm APD, [fF]
[B]
450
1.9
[B]
540
23.4
[B]
350
[A] i.e., k fit to McIntyre’s excess noise model F(M, k) = k × M + (1 − k) × (2 − M −1). See p. 63/Ref. 1.
[B] Referenced from M = 10
Spectral Response Comparisons
Deschutes BSI™, Siletz™
Deschutes FSI™
0.9
1.0
0.7
Responsivity [A/W],
Responsivity [A/W]
0.8
0.6
0.5
0.4
0.3
0.2
0.6
0.4
0.2
0.1
0.0
800
0.8
1000
1200
1400
Wavelength [nm]
1600
1800
0.0
900
1100
1300
1500
Wavelength [nm]
1700
11
Mechanical Information
175 μm
350 μm
Ø 200 μm
Anode Ø 75 μm
μm
65 μm
3
175 μm
350 μm
11
175 μm
350 μm
350 μm
Deschutes FSI™ frontside-illuminated APDs are delivered as bare die. From left: 30-, 75-, and 200-µm APDs.
12
Backside-Illuminated APD Submount Layouts
1.52 mm
Temp.
Sense
735 µm
APD
Cathode
Anode
Cathode
E
860 µm
B
C
940 µm
100 μm
E
APD
Anode
Cathode
150 μm
150 μm
Backside-illuminated APDs are delivered on submounts. Left: Deschutes BSI™, Siletz™. Right: Siletz-UHG™) .
350 μm
25 μm
Ø 75 μm
175 μm
160 μm
Ø 76 μm
25 μm
65 μm
25 μm
25 μm
80 μm
μm
3
175 μm
11
80 μm
Ø 75 μm
175 μm
Ø 28 μm
350 μm
25 μm
160 μm
25 μm
Frontside-Illuminated APD Die Layouts
Deschutes FSI™
Deschutes FSI™ VFI1-DAZA
25 µm, 6-GHz Avalanche Photodiode
Spectral Range, λ
Min
Typical
Max
Units
800
1064–1550
1750
nm
Active Diameter
25
µm
Bandwidth
6
GHz
Operating Gain, M
Responsivity at M = 10
Excess Noise Factor,
F(M, k)
1
15
20
λ = 1550 nm
7.0
7.2
8.0
λ = 1064 nm
6.0
6.8
7.7
M = 5
2.1
M = 10
3.4
M = 15
4.3
A/W
pA/Hz1/2
Noise Spectral Density at M = 10
0.15
Dark Current [A]
2.2
Dark Current Dependence on Temperature [B]
0.22
dB/K
Capacitance [C]
0.23
pF
2.6
nA
Breakdown Voltage, V BR [D]
30
37
40
V
ΔV BR /ΔT
15
17
19
mV/K
Absolute Reverse Current
3
mA
Absolute Forward Current
5
mA
Absolute Operating Temperature
−200
0–30
52
°C
73
273–303
325
K
[A] M = 10, T = 298 K
[B] 250 K < T < 300 K
[C] M > 3
[ D] T = 298 K; I dark > 0.1 mA
13
APD Die and Submounts Deschutes FSI™ VFI1-JAZA
Spectral Range, λ
Min
Typical
Max
Units
800
1064–1550
1750
nm
Active Diameter
75
µm
Bandwidth
2
GHz
Operating Gain, M
F(M, k)
14
Deschutes FSI™
1
15
20
λ = 1550 nm
7.0
7.2
8.0
λ = 1064 nm
6.0
6.8
7.7
M = 5
2.1
M = 10
3.4
M = 15
4.3
A/W
pA/Hz1/2
0.25
Dark Current [A]
5.6
0.24
dB/K
Capacitance [C]
0.45
pF
7
nA
30
37
40
V
ΔV BR /ΔT
15
17
19
mV/K
3
mA
5
mA
−200
0–30
52
°C
73
273–303
325
K
[A] M = 10, T = 298 K
[B] 250 K < T < 300 K
[C] M > 3
[ D] T = 294 K; I dark > 0.1 mA
Deschutes FSI™
Deschutes FSI™ VFI1-NAZA
200 µm, 200-MHz Avalanche Photodiode
Spectral Range, λ
Min
Typical
Max
Units
800
1064–1550
1750
nm
Active Diameter
200
µm
Bandwidth
200
MHz
Operating Gain, M
F(M, k)
1
15
20
λ = 1550 nm
7.0
7.2
8.0
λ = 1064 nm
6.0
6.8
7.7
M = 5
2.1
M = 10
3.4
M = 15
4.3
Dark Current [A]
pA/Hz1/2
0.47
6
20
A/W
24
nA
0.19
dB/K
Capacitance [C]
4.2
pF
30
37
40
V
ΔV BR /ΔT
15
17
19
mV/K
3
mA
5
mA
−200
0–30
52
°C
73
273–303
325
K
[A] M = 10, T = 298 K
[B] 250 K < T < 300 K
[C] M > 3
[ D] T = 294 K; I dark > 0.1 mA
15
APD Die and Submounts Deschutes BSI™ VFC1-EBZA
Spectral Range, λ
Min
Typical
Max
Units
950
1064–1550
1700
nm
Active Diameter
30
µm
Bandwidth
6
GHz
Operating Gain, M
F(M, k)
1
15
20
λ = 1550 nm
9.1
10.1
10.4
λ = 1064 nm
6.6
7.3
7.8
M = 5
2.1
M = 10
3.4
M = 15
4.3
Dark Current [A]
16
Deschutes BSI™
pA/Hz1/2
0.34
8.0
10.8
A/W
12.5
nA
0.24
dB/K
Submounted Capacitance [C]
0.28
pF
45
50
55
V
ΔV BR /ΔT
34
37
40
mV/K
Absolute Optical Input
5
dBm
3
mA
3
mA
−75
0–30
75
°C
198
273–303
348
K
[A] M = 10, T = 298 K
[B] 250 K < T < 300 K
[C] M > 3
[ D] T = 294 K; I dark > 0.1 mA
Deschutes BSI™
Deschutes BSI™ VFC1-JBZA
75 µm, 2.5-GHz Avalanche Photodiode
Spectral Range, λ
Min
Typical
Max
Units
950
1064–1550
1700
nm
Active Diameter
75
µm
Bandwidth
2.5
GHz
Operating Gain, M
F(M, k)
1
15
20
λ = 1550 nm
9.1
10.1
10.4
λ = 1064 nm
6.6
7.3
7.8
M = 5
2.1
M = 10
3.4
M = 15
4.3
Dark Current [A]
Dark Current Dependence on Temperature
pA/Hz1/2
0.45
5
19
A/W
24
0.24
nA
dB/K
0.35
0.54
0.57
pF
45
50
55
V
ΔV BR /ΔT
34
37
40
mV/K
5
dBm
3
mA
3
mA
−75
0–30
75
°C
198
273–303
348
K
[A] M = 10, T = 298 K
[B] 250 K < T < 300 K
[C] M > 3.
[ D] T = 294 K; I dark > 0.1 mA
17
APD Die and Submounts Deschutes BSI™ VFC1-NBZA
Spectral Range, λ
Min
Typical
Max
Units
950
1064–1550
1700
nm
Active Diameter
200
µm
Bandwidth
550
MHz
Operating Gain, M
F(M, k)
1
15
20
λ = 1550 nm
9.1
10.1
10.4
λ = 1064 nm
6.6
7.3
7.8
M = 5
2.1
M = 10
3.4
M = 15
4.3
Dark Current [A]
18
Deschutes BSI™
pA/Hz1/2
0.94
60
81
A/W
96
nA
Dark Current Dependence on Temperature
0.24
dB/K
2.2
pF
45
50
55
V
ΔV BR /ΔT
34
37
40
mV/K
5
dBm
3
mA
5
mA
−75
0–30
75
°C
198
273–303
348
K
[A] M = 10, T = 298 K
[B] 250 K < T < 300 K
[C] M > 3.
[ D] T = 294 K; I dark > 0.1 mA
Siletz™
Siletz™ VFP1-EBZA
Spectral Range, λ
Min
Typical
Max
Units
950
1064–1550
1700
nm
Active Diameter
30
µm
Bandwidth
2.3
GHz
Operating Gain, M
1
5–40
50
λ = 1550 nm
9.1
10.1
10.4
λ = 1064 nm
6.6
7.3
7.8
k effective [A]
F(M, k)
A/W
<0.02
M = 10
2.0
M = 20
2.3
M = 50
2.9
0.43
pA/Hz1/2
Dark Current at M = 1 [B]
6.6
nA
Dark Current Dependence on Temperature [C]
0.11
dB/K
60
fF
Submounted Capacitance
ΔV BR /ΔT
70
74
80
29
[C] 250 K < T < 300 K
[ D] T = 294 K; I dark > 0.1 mA
V
mV/K
19
APD Die and Submounts Siletz™ VFP1-JBZA
Spectral Range, λ
Min
Typical
Max
Units
950
1064–1550
1700
nm
Active Diameter
75
µm
Bandwidth
2.3
GHz
Operating Gain, M
1
5–40
50
λ = 1550 nm
9.1
10.1
10.4
λ = 1064 nm
6.6
7.3
7.8
k effective [A]
F(M, k)
M = 10
2.0
M = 20
2.3
M = 50
2.9
A/W
<0.02
20
Siletz™
pA/Hz1/2
0.80
12
23.4
40
nA
0.11
dB/K
350
fF
ΔV BR /ΔT
70
74
80
29
[C] 250 K < T < 300 K
[ D] T = 294 K; I dark > 0.1 mA
V
mV/K
Siletz™
Siletz™ VFP1-NBZA
Spectral Range, λ
Min
Typical
Max
Units
950
1064–1550
1700
nm
Active Diameter
200
µm
Bandwidth
350
MHz
Operating Gain, M
1
5–40
50
λ = 1550 nm
9.1
10.1
10.4
λ = 1064 nm
6.6
7.3
7.8
k effective [A]
F(M, k)
<0.02
M = 10
2.0
M = 20
2.3
M = 50
2.9
A/W
pA/Hz1/2
2.13
90
165
195
nA
0.11
dB/K
1.5
pF
ΔV BR /ΔT
70
74
80
29
[C] 250 K < T < 300 K
[ D] T = 294 K; I dark > 0.1 mA
V
mV/K
21
Packaged APDs
Packaged APDs
TO-46 Package
Ø .212
Ø .209
.072 in
183 mm
Ø .026
Ø .020
Ø .171
Ø .161
.010
.007
.118
.114
Ø .048
Ø .046
4
.006
.000
.012
.009
.046
.042
.010 max.
Pinout
1) APD Cathode
2) APD Anode
3) Ground, T Sense –
4) T Sense +
3
.043
.031
1
2
.700
.500
.045
.037
Ø .100
Ø .019
Ø .016
45° ± 0.5°
SIDE VIEW
with cap
TOP VIEW
header only
22
TO-8 Package
APD Plane
7.16 mm
Ø 0.46
2.24 ± 0.31
0.79
0.79
1
4
Ø 1.52
Active area
9.53
12
5.38
11
10
9
1.91
25.40 ± 0.64
2.87
9.91
5.72
Ø 15.24
Pinout
1) TEC –
4) TEC +
9) Temp Sense –
10) Temp Sense +
11) APD Anode (P)
12) APD Cathode (N)
Deschutes FSI™
Packaged APDs
Deschutes FSI™ VFI1-DCAA
Spectral Range, λ
25 µm APD in hermetic TO-46 can
Min
Typical
Max
Units
800
1064–1550
1750
nm
Active Diameter
25
Operating Gain, M
F(M, k)
µm
1
15
20
λ = 1550 nm
7.0
7.2
8.0
λ = 1064 nm
6.0
6.8
7.7
M = 5
2.1
M = 10
3.4
M = 15
4.3
A/W
pA/Hz1/2
0.15
Dark Current [A]
2.2
0.22
dB/K
Total Capacitance [C]
0.52
pF
6
GHz
Bandwidth
2.6
nA
30
37
40
V
ΔV BR /ΔT
15
17
19
mV/K
3
mA
5
mA
−200
0–30
52
°C
73
273–303
325
K
[A] M = 10, T = 298 K
[B] 250 K < T < 300 K
[C] M > 3
[ D] T = 298 K; I dark > 0.1 mA
23
Packaged APDs Deschutes FSI™
Deschutes FSI™ VFI1-JCAA
Spectral Range, λ
Min
Typical
Max
Units
800
1064–1550
1750
nm
Active Diameter
75
Operating Gain, M
F(M, k)
24
µm
1
15
20
λ = 1550 nm
7.0
7.2
8.0
λ = 1064 nm
6.0
6.8
7.7
M = 5
2.1
M = 10
3.4
M = 15
4.3
A/W
pA/Hz1/2
0.25
Dark Current [A]
5.6
0.24
dB/K
1.3
pF
2
GHz
Bandwidth
7
nA
30
37
40
V
ΔV BR /ΔT
15
17
19
mV/K
3
mA
5
mA
−200
0–30
52
°C
73
273–303
325
K
[A] M = 10, T = 298 K
[B] 250 K < T < 300 K
[C] M > 3
[ D] T = 294 K; I dark > 0.1 mA
Deschutes FSI™
Packaged APDs
Deschutes FSI™ VFI1-NCAA
Spectral Range, λ
Min
Typical
Max
Units
800
1064–1550
1750
nm
Active Diameter
200
Operating Gain, M
F(M, k)
µm
1
15
20
λ = 1550 nm
7.0
7.2
8.0
λ = 1064 nm
6.0
6.8
7.7
M = 5
2.1
M = 10
3.4
M = 15
4.3
Dark Current [A]
pA/Hz1/2
0.47
6
20
A/W
24
nA
0.19
dB/K
4.5
pF
Bandwidth
200
MHz
30
37
40
V
ΔV BR /ΔT
15
17
19
mV/K
3
mA
5
mA
−200
0–30
52
°C
73
273–303
325
K
[A] M = 10, T = 298 K
[B] 250 K < T < 300 K
[C] M > 3.
[ D] T = 294 K; I dark > 0.1 mA
25
Packaged APDs Deschutes FSI™ VFI1-JKAB
Spectral Range, λ
Deschutes FSI™
75 µm APD in hermetic TO-8 can with 3-stage TEC
Min
Typical
Max
Units
800
1064–1550
1750
nm
Active Diameter
75
Operating Gain, M
F(M, k)
26
µm
1
15
20
λ = 1550 nm
7.0
7.2
8.0
λ = 1064 nm
6.0
6.8
7.7
M = 5
2.1
M = 10
3.4
M = 15
4.3
A/W
Noise Spectral Density at 200 K [A]
16
Dark Current [B]
5.6
0.24
dB/K
Total Capacitance [D]
1.4
pF
2
GHz
Bandwidth
Rated Package Temperature [E]
fA/Hz1/2
7
218
nA
K
TEC Maximum Heat Transfer, Q max [F]
0.4
W
TEC Maximum Cooling, ΔTmax
110
K
TEC Maximum Current, I max
1.4
A
TEC Maximum Voltage, Vmax
1.9
V
Breakdown Voltage, V BR [G]
30
37
40
V
ΔV BR /ΔT
15
17
19
mV/K
3
mA
5
mA
−200
0–30
52
°C
73
273–303
325
K
[A] M = 10
[B] M = 10, T = 298 K
[C] 250 K < T < 300 K
[ D] M > 3
[E] Guaranteed minimum; colder operation may be possible with caution
[F] All TEC data @ T = 300 K
[G] T = 294 K; I dark > 0.1 mA
Deschutes FSI™
Packaged APDs
Deschutes FSI™ VFI1-NKAB
Spectral Range, λ
Min
Typical
Max
Units
800
1064–1550
1750
nm
Active Diameter
200
Operating Gain, M
F(M, k)
µm
1
15
20
λ = 1550 nm
7.0
7.2
8.0
λ = 1064 nm
6.0
6.8
7.7
M = 5
2.1
M = 10
3.4
M = 15
4.3
Dark Current [B]
fA/Hz1/2
55
6
20
A/W
24
nA
0.19
dB/K
4.9
pF
Bandwidth
200
MHz
218
K
0.4
W
110
K
1.4
A
1.9
V
30
37
40
V
ΔV BR /ΔT
15
17
19
mV/K
3
mA
5
mA
−200
0–30
52
°C
73
273–303
325
K
[A] M = 10
[B] M = 10, T = 298 K
[C] 250 K < T < 300 K
[ D] M > 3
[G] T = 294 K; I dark > 0.1 mA
27
Packaged APDs Deschutes BSI™
Deschutes BSI™ VFC1-JCAA
Spectral Range, λ
Min
Typical
Max
Units
950
1064–1550
1700
nm
Active Diameter
75
Operating Gain, M
F(M, k)
1
15
20
λ = 1550 nm
9.1
10.1
10.4
λ = 1064 nm
6.6
7.3
7.8
M = 5
2.1
M = 10
3.4
M = 15
4.3
Dark Current [A]
28
µm
pA/Hz1/2
0.45
5
19
A/W
24
nA
0.24
dB/K
0.76
pF
Bandwidth
2.5
GHz
45
50
55
V
ΔV BR /ΔT
34
37
40
mV/K
5
dBm
3
mA
3
mA
−75
0–30
75
°C
198
273–303
348
K
[A] M = 10, T = 298 K
[B] 250 K < T < 300 K
[C] M > 3
[ D] T = 294 K; I dark > 0.1 mA
Deschutes BSI™
Packaged APDs
Deschutes BSI™ VFC1-NCAA
Spectral Range, λ
Min
Typical
Max
Units
950
1064–1550
1700
nm
Active Diameter
75
Operating Gain, M
F(M, k)
µm
1
15
20
λ = 1550 nm
9.1
10.1
10.4
λ = 1064 nm
6.6
7.3
7.8
M = 5
2.1
M = 10
3.4
M = 15
4.3
Dark Current [A]
pA/Hz1/2
0.94
60
81
A/W
96
nA
0.24
dB/K
2.45
pF
Bandwidth
550
MHz
45
50
55
V
ΔV BR /ΔT
34
37
40
mV/K
5
dBm
3
mA
3
mA
−75
0–30
75
°C
198
273–303
348
K
[A] M = 10, T = 298 K
[B] 250 K < T < 300 K
[C] M > 3
[ D] T = 294 K; I dark > 0.1 mA
29
Packaged APDs Deschutes BSI™
Deschutes BSI™ VFC1-JKAB
Spectral Range, λ
Min
Typical
Max
Units
950
1064–1550
1700
nm
Active Diameter
75
Operating Gain, M
F(M, k)
1
15
20
λ = 1550 nm
9.1
10.1
10.4
λ = 1064 nm
6.6
7.3
7.8
M = 5
2.1
M = 10
3.4
M = 15
4.3
Dark Current [B]
30
µm
fA/Hz1/2
30
5
19
A/W
24
nA
0.24
dB/K
0.76
pF
Bandwidth
2.5
GHz
218
K
0.4
W
110
K
1.4
A
1.9
V
45
50
55
V
ΔV BR /ΔT
34
37
40
mV/K
5
dBm
3
mA
3
mA
−75
0–30
75
°C
198
273–303
348
K
[A] M = 10
[B] M = 10, T = 298 K
[C] 250 K < T < 300 K
[ D] M > 3
[G] T = 294 K; I dark > 0.1 mA
Deschutes BSI™
Deschutes BSI™ VFC1-NKAB
Spectral Range, λ
Packaged APDs
Min
Typical
Max
Units
950
1064–1550
1700
nm
Active Diameter
75
Operating Gain, M
F(M, k)
µm
1
15
20
λ = 1550 nm
9.1
10.1
10.4
λ = 1064 nm
6.6
7.3
7.8
M = 5
2.1
M = 10
3.4
M = 15
4.3
Dark Current [B]
fA/Hz1/2
63
60
81
A/W
96
nA
0.24
dB/K
2.45
pF
Bandwidth
550
MHz
218
K
0.4
W
110
K
1.4
A
1.9
V
45
50
55
V
ΔV BR /ΔT
34
37
40
mV/K
5
dBm
3
mA
3
mA
−75
0–30
75
°C
198
273–303
348
K
[A] M = 10
[B] M = 10, T = 298 K
[C] 250 K < T < 300 K
[ D] M > 3
[G] T = 294 K; I dark > 0.1 mA
31
Packaged APDs Siletz™
Siletz™ VFP1-JCAA
Spectral Range, λ
Min
Typical
Max
Units
950
1064–1550
1700
nm
Active Diameter
75
Operating Gain, M
1
5–40
50
λ = 1550 nm
9.1
10.1
10.4
λ = 1064 nm
6.6
7.3
7.8
k effective [A]
F(M, k)
M = 10
2.0
M = 20
2.3
M = 50
2.9
A/W
<0.02
32
µm
pA/Hz1/2
0.80
12
23.4
40
nA
0.11
dB/K
0.62
pF
Bandwidth
2.3
GHz
Breakdown Voltage, V BR [E]
ΔV BR /ΔT
70
74
80
29
[C] 250 K < T < 300 K
[ D] M > 3
[E] T = 294 K; I dark > 0.1 mA
V
mV/K
Siletz™
Packaged APDs
Siletz™ VFP1-NCAA
Spectral Range, λ
Min
Typical
Max
Units
950
1064–1550
1700
nm
Active Diameter
200
Operating Gain, M
1
5–40
50
λ = 1550 nm
9.1
10.1
10.4
λ = 1064 nm
6.6
7.3
7.8
k effective [A]
F(M, k)
A/W
<0.02
M = 10
2.0
M = 20
2.3
M = 50
2.9
µm
pA/Hz1/2
2.13
90
165
195
nA
1.86
pF
Bandwidth
350
MHz
ΔV BR /ΔT
70
74
80
29
[C] M > 3
[ D] T = 294 K; I dark > 0.1 mA
V
mV/K
33
Packaged APDs Siletz™ VFP1-JKAB
Siletz™
Spectral Range, λ
Min
Typical
Max
Units
950
1064–1550
1700
nm
Active Diameter
75
Operating Gain, M
1
5–40
50
λ = 1550 nm
9.1
10.1
10.4
λ = 1064 nm
6.6
7.3
7.8
k effective [A]
F(M, k)
M = 10
2.0
M = 20
2.3
M = 50
2.9
Dark Current at M = 1 [C]
A/W
<0.02
Noise Spectral Density at 200 K [B]
34
µm
fA/Hz1/2
227
12
23.4
40
nA
0.62
pF
Bandwidth
2.3
GHz
218
K
0.4
W
110
K
1.4
A
1.9
V
ΔV BR /ΔT
70
74
80
29
[B] M = 10
[C] Referenced from M = 10
[ D] M > 3
[G] T = 294 K; I dark > 0.1 mA
V
mV/K
Siletz™
Packaged APDs
Siletz™ VFP1-NKAB
Spectral Range, λ
Min
Typical
Max
Units
950
1064–1550
1700
nm
Active Diameter
200
Operating Gain, M
1
5–40
50
λ = 1550 nm
9.1
10.1
10.4
λ = 1064 nm
6.6
7.3
7.8
k effective [A]
F(M, k)
µm
<0.02
M = 10
2.0
M = 20
2.3
M = 50
2.9
Noise Spectral Density at 200 K [B]
Dark Current at M = 1 [C]
A/W
fA/Hz1/2
603
90
165
195
nA
1.86
pF
Bandwidth
350
MHz
218
K
0.4
W
110
K
1.4
A
1.9
V
ΔV BR /ΔT
70
74
80
29
[B] M = 10
[ D] M > 3
[G] T = 294 K; I dark > 0.1 mA
V
mV/K
35
APD Photoreceivers
Voxtel’s line of APD photoreceivers achieve industry-leading sensitivity with bandwidth ranging from the MHz
to GHz scales. These receivers are hermetically sealed in TO-8 and TO-46 packages, and integrate a Voxtel APD
with a transimpedance amplifier (TIA) to provide wideband, low-noise preamplification of signal current from
the APD. The APD and TIA are integrated on a ceramic submount, lowering parasitic capacitance and thereby
maximizing bandwidth and minimizing noise.
The receivers integrate a calibrated temperature sensor, capacitive decoupling, separate package and circuit grounding, and include differential output to allow users easy integration into their system electronics.
Photoreceivers in TO-8 packages can also include thermoelectric cooling to stabilize the APD gain over the
range of application environments.
Typical Voxtel Photoreceiver
36
Typical Block Diagram
TEC+
+APD
TSense+ (B/C)
TSense
N/C
TSense– (E)
TEC–
N/C
VCC +3.3V
Out+
Out–
Gnd
Gnd
APD Photoreceivers: Mechanical Information
TO-8 Package, Rev. C
Ø 1.50 mm
0.80 mm
Ø 0.45 mm
0.80 mm
1
Acve area
4.06 mm
2.54 mm
0.38 mm
Pinout (from boom)
3
12
5.08 mm
2.09 mm
2
10.16 mm
1) Gnd
7) Out–
2) +APD
8) Gnd
3) TEC–
9) Out+
4) TSense–
10) VCC +3.3V
5) TEC+
11) N/C
6) TSense+
12) N/C
Ø 15.25 mm
SIDE VIEW
with cap
BOTTOM VIEW
TO-8 Package, Rev. F
Ø 1.50 mm
0.80 mm
Ø 0.45 mm
0.80 mm
1
0.38 ±0.03mm
6.35 mm
5.08 mm
6.65 ±0.14mm
2
3
12
2.54 mm
2.39 ±0.15mm
1) Gnd
2) +APD
3) TEC+
4) TSense–
5) TEC–
6) TSense+
10.16 mm
7) Out–
8) Gnd
9) Out+
10) VCC +3.3V
11) N/C
12) N/C
37
Ø 15.25 mm
Fiber Optic Package, Rev. C
6.35 mm
Ø 16.50 mm
Ø 1.50 mm
0.80 mm
Ø 0.45 mm
Ø 3.81 mm
0.80 mm
1
2
3
2.54 mm
5.08 mm
12
10.16 mm
Ø 15.25 mm
BOTTOM VIEW
0.70 mm
Ø 8.00 mm
11.30 mm
7.00 mm
1000 mm
SIDE VIEW
See also page 49.
Ø 16.50 mm
TOP VIEW
APD Photoreceivers Deschutes FSI™
Deschutes FSI™ RDI1-NJAF
Spectral Range, λ
Min
Typical
Max
Units
800
1064–1550
1750
nm
Active Diameter
200
µm
Bandwidth
200
MHz
APD Operating Gain, M
Receiver Responsivity
at M = 10
F(M, k)
Noise Equivalent Power at
M = 20
1
15
λ = 1550 nm
132
λ = 1064 nm
125
M = 5
2.1
M = 10
3.4
M = 15
4.3
λ = 1550 nm
3.1
λ = 1064 nm
3.3
APD Dark Current at M = 10
38
200 µm, 200-MHz Photoreceiver
6
Low-Frequency Cutoff [A]
20
20
kV/W
nW
24
30
nA
kHz
APD Breakdown Voltage, V BR [B]
30
37
40
V
ΔV BR /ΔT
15
17
19
mV/K
TEC Power
0.8 A @ 2.2 V
TEC Cooling, ΔTmax
43
TIA Power
20 mA @ 3.3 V
Thermal Load
66
Output Impedance [C]
60
TIA AC Overload
Window Thickness
Window Transparency
K
75
mW
90
Ω
2.0
mA P–P
0.5–0.8
mm
λ = 1550 nm
98%
λ = 1064 nm
95%
[A] −3 dB, 1 µA input
[B] T = 295 K
[C] Single-ended; 150 Ω differential
Deschutes FSI™
APD Photoreceivers
Deschutes FSI™ RDI1-JJAF
Spectral Range, λ
Min
Typical
Max
Units
800
1064–1550
1750
nm
Active Diameter
75
µm
Bandwidth
580
MHz
at M = 10
F(M, k)
M = 20
1
15
λ = 1550 nm
132
λ = 1064 nm
125
M = 5
2.1
M = 10
3.4
M = 15
4.3
λ = 1550 nm
3.1
λ = 1064 nm
3.3
5.6
30
20
kV/W
nW
7
nA
kHz
30
37
40
V
ΔV BR /ΔT
15
17
19
mV/K
TEC Power
0.8 A @ 2.2 V
TEC Cooling, ΔTmax
43
TIA Power
20 mA @ 3.3 V
Thermal Load
66
Output Impedance [D]
60
TIA AC Overload
Window Thickness
Window Transparency
K
75
mW
90
Ω
2.0
mA P–P
0.5–0.8
mm
λ = 1550 nm
98%
λ = 1064 nm
95%
[B] T = 295 K
39
APD Photoreceivers Deschutes BSI™
Deschutes BSI™ RYC1-NJAF
Spectral Range, λ
Min
Typical
Max
Units
950
1064–1550
1700
nm
Active Diameter
200
µm
Bandwidth
200
MHz
at M = 20
F(M, k)
M = 20
1
15
λ = 1550 nm
372
λ = 1064 nm
228
M = 5
2.1
M = 10
3.4
M = 15
4.3
λ = 1550 nm
1.8
λ = 1064 nm
2.3
40
60
81
20
kV/W
nW
96
30
nA
kHz
45
50
55
V
ΔV BR /ΔT
34
37
40
mV/K
TEC Power
0.8 A @ 2.2 V
TEC Cooling, ΔTmax
43
TIA Power
20 mA @ 3.3 V
Thermal Load
66
60
TIA AC Overload
Window Thickness
Window Transparency
75
mW
90
Ω
2.0
mA P–P
0.5–0.8
mm
λ = 1550 nm
98%
λ = 1064 nm
95%
Temperature Sensor Sensitivity
[B] T = 295 K
K
2.18
[C] at T = 298 K
[D] Single-ended; 150 Ω differential
See also page 42.
mV/K
Deschutes BSI™
APD Photoreceivers
Deschutes BSI™ RDC1-NJAF
Spectral Range, λ
Min
Typical
Max
Units
950
1064–1550
1700
nm
Active Diameter
200
µm
Bandwidth
300
MHz
at M = 20
F(M, k)
M = 20
1
15
λ = 1550 nm
372
λ = 1064 nm
228
M = 5
2.1
M = 10
3.4
M = 15
4.3
λ = 1550 nm
3.2
λ = 1064 nm
4.1
60
81
20
kV/W
nW
96
30
nA
kHz
45
50
55
V
ΔV BR /ΔT
34
37
40
mV/K
TEC Power
0.8 A @ 2.2 V
TEC Cooling, ΔTmax
43
TIA Power
20 mA @ 3.3 V
Thermal Load
66
60
TIA AC Overload
Window Thickness
Window Transparency
75
mW
90
Ω
2.0
mA P–P
0.5–0.8
mm
λ = 1550 nm
98%
λ = 1064 nm
95%
Temperature Sensor Sensitivity
[B] T = 295 K
K
2.18
[C] at T = 298 K
[D] Single-ended; 150 Ω differential
mV/K
41
Deschutes BSI™ RYC1-NJAF
Deschutes BSI™ RDC1-NJAF
Linearity of Response
Responsivity [kV/W]
250
200
M =20
Avg.
95%
90%
M =10
Avg.
95%
90%
150
100
50
0
0.1
0.2 0.3
0.5
1
2
3
Signal Power [µW]
Linearity of response in the RYC1-NJAF receiver; applies also to RDC1NJAF. 20‑MHz modulated signal, 1064 nm.
Output and Gain: RDC1-NJAC 300-MHz
293 K
100
278 K
Light + Dark Current
Dark Current
Avalanche Gain
10–6
10–7
10
10–8
Gain
10–5
Output Current [A]
42
10–9
1
10–10
20
25
30
35
40
45
50
Reverse Bias [V]
Output current and gain vs. bias for cooled and uncooled photoreceivers
at ~100 nW light power.
Deschutes BSI™
APD Photoreceivers
Deschutes BSI™ RIC1-JJAF
Spectral Range, λ
75 µm, 2-GHz Photoreceiver
Min
Typical
Max
Units
950
1064–1550
1700
nm
Active Diameter
75
µm
Bandwidth
2
GHz
at M = 20
F(M, k)
M = 20
1
15
λ = 1550 nm
66
λ = 1064 nm
41
M = 5
2.1
M = 10
3.4
M = 15
4.3
λ = 1550 nm
13.6
λ = 1064 nm
18.8
5
19
20
kV/W
nW
24
65
nA
kHz
45
50
55
V
ΔV BR /ΔT
34
37
40
mV/K
TEC Power
0.8 A @ 2.2 V
TIA Power
25 mA @ 3.3 V
Thermal Load
83
mW
Output Impedance [C]
42.5
50
57.5
Ω
Data Output Swing
220
300
500
mV P–P
TIA AC Overload
Window Thickness
Window Transparency
[B] T = 295 K
2.0
mA P–P
0.5–0.8
mm
λ = 1550 nm
98%
λ = 1064 nm
95%
43
Deschutes BSI™ RIC1-JJQF
Spectral Range, λ
Min
Typical
Max
Units
950
1064–1550
1700
nm
MM Fiber-Optic Connection
Multimode 62.5/125, FC connector [A]
µm
2
GHz
Bandwidth
at M = 20
F(M, k)
M = 20
1
λ = 1550 nm
66
λ = 1064 nm
41
M = 5
2.1
M = 10
3.4
M = 15
4.3
λ = 1550 nm
13.6
λ = 1064 nm
18.8
44
15
5
Low-Frequency Cutoff [B]
19
20
kV/W
nW
24
65
nA
kHz
APD Breakdown Voltage, V BR [C]
45
50
55
V
ΔV BR /ΔT
34
37
40
mV/K
TEC Power
0.8 A @ 2.2 V
TIA Power
25 mA @ 3.3 V
Thermal Load
83
mW
42.5
50
57.5
Ω
Data Output Swing
220
300
500
mV P–P
TIA AC Overload
Window Thickness
Window Transparency
2.0
mA P–P
0.5–0.8
mm
λ = 1550 nm
98%
λ = 1064 nm
95%
[A] Other sizes/connectors available.
[B] −3 dB, 40 µA input
[C] T = 295 K
[ D] Single-ended; 100 Ω differential
Siletz™
APD Photoreceivers
Siletz™ RIP1-NJAF
Spectral Range, λ
Min
Typical
Max
Units
950
1064–1550
1700
nm
Active Diameter
Bandwidth
at M = 40
F(M, k)
M = 40
1
200
µm
1
GHz
5–40
λ = 1550 nm
133
λ = 1064 nm
96
k effective [A]
<0.02
M = 10
2.0
M = 20
2.3
M = 50
2.9
λ = 1550 nm
12.1
λ = 1064 nm
15.4
APD Dark Current at M = 1 [B]
90
Low-Frequency Cutoff [C]
165
50
kV/W
nW
195
65
APD Breakdown Voltage, V BR [D]
70
ΔV BR /ΔT
74
kHz
80
29
TEC Power
0.8 A @ 2.2 V
TIA Power
25 mA @ 3.3 V
Thermal Load
nA
V
mV/K
83
mW
Output Impedance [E]
42.5
50
57.5
Ω
Data Output Swing
220
300
500
mV P–P
TIA AC Overload
Window Thickness
Window Transparency
2.0
mA P–P
0.5–0.8
mm
λ = 1550 nm
98%
λ = 1064 nm
95%
[D] T = 294 K
[C] −3 dB, 1 µA input
[E] Single-ended; 100 Ω differential
45
APD Photoreceivers Siletz™
Siletz™ RIP1-JJAF
75 µm, 2.1-GHz Photoreceiver
Spectral Range, λ
Typical
Max
Units
950
1064–1550
1700
nm
Active Diameter
75
µm
Bandwidth
2.1
GHz
at M = 40
F(M, k)
M = 40
46
Min
1
5–40
λ = 1550 nm
133
λ = 1064 nm
96
k effective [A]
<0.02
M = 10
2.0
M = 20
2.3
M = 50
2.9
λ = 1550 nm
8.2
λ = 1064 nm
10.5
12
23.4
50
kV/W
nW
40
65
70
ΔV BR /ΔT
74
kHz
80
29
TEC Power
0.8 A @ 2.2 V
TIA Power
25 mA @ 3.3 V
Thermal Load
nA
V
mV/K
83
mW
42.5
50
57.5
Ω
Data Output Swing
220
300
500
mV P–P
TIA AC Overload
Window Thickness
Window Transparency
2.0
mA P–P
0.5–0.8
mm
λ = 1550 nm
98%
λ = 1064 nm
95%
[D] T = 294 K
Siletz™
APD Photoreceivers
Siletz™ RIP1-JJQF
2.1-GHz Fiber-Coupled Photoreceiver
Spectral Range, λ
Min
Typical
Max
Units
950
1064–1550
1700
nm
MM Fiber-Optic Connection
Multimode 62.5/125, FC connector [A]
µm
2.1
GHz
Bandwidth
at M = 40
F(M, k)
M = 40
1
5–40
λ = 1550 nm
133
λ = 1064 nm
96
k effective [B]
<0.02
M = 10
2.0
M = 20
2.3
M = 50
2.9
λ = 1550 nm
8.2
λ = 1064 nm
10.5
APD Dark Current at M = 1 [C]
12
Low-Frequency Cutoff [D]
APD Breakdown Voltage, V BR [E]
23.4
50
kV/W
nW
40
65
70
ΔV BR /ΔT
74
kHz
80
29
TEC Power
0.8 A @ 2.2 V
TIA Power
25 mA @ 3.3 V
Thermal Load
nA
V
mV/K
83
mW
Output Impedance [F]
42.5
50
57.5
Ω
Data Output Swing
220
300
500
mV P–P
TIA AC Overload
2.0
[A] Other sizes/connectors available.
[B] i.e., k fit to McIntyre’s excess noise model F(M, k) = k × M + (1 − k) × (2 − M −1). See p. 63/Ref. 1.
[ D] −3 dB, 1 µA input
[E] T = 294 K
[F] Single-ended; 100 Ω differential
See also page 50.
mA P–P
47
APD Photoreceivers Siletz™ R2P1-JCAF
75 µm, 1.5-GHz Ball-Lens-Coupled Photoreceiver
Spectral Range, λ
Active Diameter
Siletz™
Min
Typical
Max
Units
950
1064–1550
1700
nm
Actual
75
Effective
Bandwidth
1.5
at M = 40
48
1
5–40
λ = 1550 nm
311
λ = 1064 nm
225
k effective [A]
<0.02
M = 10
2.0
M = 20
2.3
M = 50
2.9
Noise Equivalent Power
at M = 30
λ = 1550 nm
11.0
λ = 1064 nm
14.1
at M = 40
λ = 1550 nm
12.5
λ = 1064 nm
15.8
F(M, k)
µm
300
12
23.4
GHz
50
kV/W
nW
nW
40
30
ΔV BR /ΔT
70
74
kHz
80
29
TIA Power
24 mA @ 4.5 V
Thermal Load
66
108
50
Data Output Swing
140
TIA AC Overload [F]
8
λ = 1550 nm
98%
λ = 1064 nm
95%
mW
Ω
270
[F] At RTIA input
[ D] T = 294 K
V
mV/K
20 mA @ 3.3 V
Lens Transparency
nA
mV P–P
mA P–P
Siletz™
APD Photoreceivers
Siletz™ R2P1-JCAF
Impulse Response
Spatial Response with Ball Lens
0.8
1
Normalized Response
0.7
Response [V]
0.6
0.5
0.4
0.3
0.2
0.1
0
0.8
0.6
0.4
0.2
0
−0.1
0
5
10
15
20
25
−400
−300
−200
−100
0
100
200
300
400
Position [µm]
Time [ns]
49
Ø 5.31
±0.038
Ø 4.22 mm
5.38
Ø 2.54
4.70
2.55
82°
82°
1
3
4
1.4
5
57°
57°
BOTTOM VIEW
SIDE VIEW
with cap
TOP VIEW
header only
2
1
Pinout
1) DOUT
2) VDD
3) V+ APD
4) DOUT B
5) GND
APD Photoreceivers Siletz™
Siletz™ RIP1-JJAF
Siletz™ RIP1-JJQF
50
Bit Error Rate
Bit Error Rate
10–1
10–2
10–3
10–4
10–5
10–6
10–7
10–8
10–9
10–10
10–11
10–12
Bit Rate
2.488 Gb/s
2.125 Gb/s
622 Mb/s
156 Mb/s
–50
–45
–40
–35
Optical Power [dBm]
Bit error rate (BER) vs. input optical power for the RIP1-JJAF receiver; applies also to
RIP1-JJQF. 20‑MHz modulated signal, 1064 nm.
APD Receiver Support Electronics Modules
Voxtel’s Receiver Support Electronics Modules provide an easy way to operate our TO‑8–packaged receivers
without having to design and build custom optics. They can be used as optical receiver modules (ORMs) for
system prototyping, or for incoming inspection, test, and characterization of APD receivers.
These modules include a 5 V AC–DC converter to provide power and grounding, and a grounding plug for
additional optional grounding. The bias supplied to the receiver can be monitored through a BNC connection
on the back plate, and is adjustable if necessary using a potentiometer. When the module is ordered together
with a receiver, the module will be shipped with the supply voltage adjusted optimally for that receiver.
Support Module: Functional Diagram
APD Receiver Support Module
APD-TIA Receiver (TO-8)
APD Bias Monitor
APD Bias
APD Bias Control
TEC +
+APD
TSense+
TEC Control
TSense–
TSense
N/C
5V, 3A in; GND
TEC –
N/C
VCC +3.3 or +5V
RTIA Bias
51
Out 1
Out 2
Out+
Out–
Gnd
GND
Gnd
Support Module: Mechanical Information
0
5.500
5.000
.474
1.522
2.147
2.772
4.222
0
.380
.468
4x Ø .089 Thru All
4–40 UNC –2B Thru All
User-available holes
3.450
3.460
3.847
1.105
0
1.041
1.105
1.166
2.089
.750
0
.750
2.089
1.181
4x Rubber Feet
2xØ .281 Thru All
APD Laser Rangefinder (LRF) Receivers
The ROX Rx series of LRF receivers integrates Voxtel’s Deschutes VFC1 Series of InGaAs APD. The Deschutes
APDs are sensitive over the 950 nm to 1700 nm spectral range and have stable avalanche gain up to M=25. To
avoid the power draw, cost, and complexity of a thermoelectric cooler (TEC), the ROX Rx series of receivers uses
a temperature-dependent bias compensation scheme where gain is slightly reduced at high temperatures to
mitigate the deleterious effects of APD dark current, and gain is allowed to increase at low temperatures.
The Voxtel ROX ASIC performs signal amplification, conditioning, pulse detection, pulse generation and differential output. A user-supplied VCMOS1 bias (+1.8 VDC) powers the ASIC. The ROX ASIC includes a two-stage
resistive transimpedance amplifier (TIA) with a 100 MHz bandwidth. The ASIC is designed to convert the current output of the APD into an amplified voltage signal that can be detected by the pulse detection circuits.
Typical LRF Receiver
52
Functional Diagram: APD LRF Receivers
The ROX Rx series of LRF receivers includes six primary components: (1) Voxtel’s Deschutes™ NIR APD, (2) a
custom-designed ROX™ amplification and pulse processing ASIC, (3) a bias supply and conditioning circuit,
(4) a microcontroller and (5) an EEPROM; all are mounted on a circuit board integrated in (6) a hermetic TO-8
package.
Block Diagram
Mechanical Information: APD LRF Receivers
The ROX Rx series of receiver cap consists of a fused silica flat window (Schott D273T) with a wideband NIR
anti-reflection coating on both sides. Inside the package, the APD is mounted directly onto the ASIC, minimizing capacitance and improving reliability. The TO-8 package has 12-pins, which include: six user-required
inputs, a differential signal output pair, two optional LRFR monitor points (bias and buffered signal), and two
pins for factory calibration and servicing.
TO-8 Package
53
ROX™ Rx Series LRF Receivers
RVC1-JIAC
Deschutes BSI™
100 MHz ROX Rx Series Receiver
w/ 75-μm Deschutes BSI™ R-APD
in a TO-8 Package
Parameter
Min
Typical
Max
Units
Spectral Response, λ
950
1535
1700
nm
Optically Active Diameter
75
μm
100
MHz
100
300
kHz
1
5 - 20
25
Pulse Pair Resolution
70
100
Linear Dynamic Range
25
dB
Total Dynamic Range
70
dB
Bandwidth
Low Frequency Cutoff
Comparator Threshold Level (V COMP)
0
0.48 - 0.78
Optional Comparator Decay
Time (V HI to V COMP)
54
1.8
3
ns
V
μs
Operational Performance
Small Signal Responsivity 1
890
Temporal Resolution1,2,3,4
8900
1
71200
206
1,2,4
kV/W
ps RMS
0.2
0.3
0.5
nW
0.8
1.2
2.0
nW
6
MW/cm 2
1.8 V APD supply
20
mA
5 V APD supply
10
mA
5
mA
80
°C
Signal Sensitivity 1,4,5
Maximum Instantaneous Optical Power
4
Power Requirements
Low Voltage Current
Draw Threshold Level
High Voltage Current
< 63 V APD supply
Environmental
Operational Temperature Range
-40
1 Assumes 2-ns pulse width
2 M =10 gain
3 20-nW signal
4 1535-nm spectral response
5 0.1% false alarm rate
Deschutes BSI™
RVC1-NIAC
100 MHz ROX Rx Series Receiver
w/ 200-μm Deschutes BSI™ R-APD
in a TO-8 Package
Parameter
Min
Typical
Max
Units
Spectral Response, λ
950
1535
1700
nm
Optically Active Diameter
200
μm
Bandwidth
100
MHz
100
300
kHz
1
10
25
Pulse Pair Resolution
70
100
Linear Dynamic Range
25
dB
Total Dynamic Range
70
dB
Low Frequency Cutoff
Comparator Threshold Level (V COMP)
0
Optional Comparator Decay
Time (V HI to V COMP)
0.48 - 0.78
1.8
3
ns
V
μs
Operational Performance
Small Signal Responsivity 1
890
Temporal Resolution1,2,3,4
Signal Sensitivity
8900
1
71200
206
1,2,4
1,4,5
Maximum Instantaneous Optical Power
ps RMS
0.3
0.5
1.0
nW
1.2
2.0
4.0
nW
6
MW/cm
4
Power Requirements
Low Voltage Current
1.8 V APD supply
20
mA
5 V APD supply
10
mA
High Voltage current
< 63 V APD
supply
5
mA
80
°C
Environmental
Operational Temperature Range
-40
1 2-ns pulse width
2 M =10 gain
3 20-nW signal
4 1535-nm spectral response
5 0.1% false alarm rate
55
kV/W
2
APD Laser Rangefinders (LRFs)
Voxtel’s Deschutes VFC1 Series of InGaAs APDs enable low-power high-performance ranging in our eye-safe
micro-miniature laser rangefinders (µLRFs), including:
• ROX OEM Series: A compact eye-safe uLRF module for original equipment manufacturers.
• ROX uLRF Series: A compact eye-safe uLRF delivering the highest performance in its class
.
56
Deschutes BSI™
ROX™ OEM Series LRF Modules
ROX™ OEM Series−Compact, High Performance
uLRF Modules for OEMs
Features
• Eye-safe: Class-1M, 1535nm laser transmitter
• Unsurpassed Sensitivity: <
0.5 nW NEP
• Long Range: 7.5 km singleshot with 25-mm receive
optics
• Simple: Serial interface
with programmable
control over threshold and
gain
• High Precision: 150-mm
accuracy single-shot
variance
• High Beam Quality:
Diffraction-limited beam,
M 2 < 1.2
Safely enabling acquisition of the most detailed, timely, and accurate data—at the lowest size, weight, power and cost
The compact ROX OEM series μLRF module is a low-cost easy-to-integrate, easyto-operate micro-laser rangefinder (μLRF) module custom-designed for original
equipment manufacturers (OEMs) of compact ranging systems for commercial,
industrial and military applications.
••
• Excellent Repetition Rate:
Up to 10-Hz single-shot
repetition rate
• Low Power Consumption:
800 mW while ranging
••
Industry-leading Performance with Reduced Size, Weight, Power
and Cost: Measuring precisely at long range previously required inefficient
laser sources with large collection optics, resulting in large, heavy ranging
systems—too large for most consumer and size-sensitive commercial
applications. By tightly coupling our proprietary laser and high-performance
APD photoreceiver with our control and processing electronics, Voxtel makes
possible a new class of ultra-miniature rangefinders that can be embedded
in a wide variety of products. With the Class-1M laser and low-noise APD
photoreceiver, tightly integrated with programmable functionality, the μLRF
achieves noise equivalent power (NEP) of 0.5 nW, with linear dynamic range
of 25 dB and total dynamic range of 70 db, while maintaining excellent
damage threshold levels of 6 MW/cm2. The compact cost-effective design—
which eliminates the need for power-hungry thermoelectric coolers—allows
for smaller, more affordable active systems.
••
Flexible Operation: The photoreceiver has programmable modes to stabilize
gain over a wide temperature range, to optimize ranging performance over
the full temperature range, and to implement other user-programmable
or factory-configured functions. Range-programmable threshold and gain
features allow maintained sensitivity over a large range and optimized false
alarm rates (FARs) for a wide variety of operating scenarios.
• Long Lifetime: > 100
million shots
• Robust: Qualified to
guns and other extreme
environments
• Lightweight: 32 grams
• Option: Up to 1-mm
hemispheric lens on APD
Applications
• Survey and 3D Building
Rendering
• Mapping & Altimetry
• Sports & Recreation
Eye-safe Laser: Many ranging devices use near-infrared lasers or LEDs that
are not eye-safe at the power levels required to generate sufficient return
pulses from long-range targets, under all weather conditions. Our customdeveloped compact monolithic, passively Q-switched, eye-safe 1535-nm
laser—with 100-µJ 2-ns FWHM laser pulses of near diffraction-limited beam
quality at 40 kW of peak power—allows the ROX OEM series µLRF, with a 25mm optic, to image up to 7.5 km in single-pulse mode and over 10 km when
multiple pulses accumulate. A diffraction-limited laser beam with the highest
power in its weight-price class, provides class-leading range and accuracy.
• Police & Paramilitary
57
Model EVKI-NABC
Specifications: Min
Deschutes BSI™
Typical
Max
Conditions
Transmitter
Wavelength
1535 nm
Pulse Energy
85 μJ
100 μJ
Pulse Width
2 ns
Peak Power
40 kW
Pulse Repetition Frequency
1 Hz
Beam Diameter
Beam Quality
FWHM
10 Hz
0.7 mm
Beam Divergence
(M 2)
150 μJ
4.2 mrad
1
1.1
1.2
Receiver
58
Diameter
200 µm
500 pW
Ranging Performance
Timing Resolution
60 ps
Range Precision
Range Distance
10 m
150 mm
single pulse
10 m - 7.5 km
25-mm receive optics, clear
conditions, single pulse,
FAR = 60 Hz (0.1%)
Electrical
Power Consumption
800 mW
1.7 W
10-Hz repetition rate
Mechanical
Weight
32 g
Environmental
Operating Temperature
-40 o C to +60 o C
Shock
1500 g, 0.5 ms
Vibration
20 – 2000 Hz, 20 g
Lifetime
> 100 million shots
mean time to failure (MT TF)
CAUTION
Class I Invisible Laser
Radiaon Present
Avoid long-term viewing of laser.
Deschutes BSI™
Model
Component Dimensions: EVKI-NABC
Receiver
[mm]
8.6
(radius)
inches
27.6
System Board
48.3
[mm]
inches
59
37.1
Tr a n s m i t t e r
[mm]
mounting screws 2X 2mm SHCS
[1.080]
27.4
[0.211]
5.350
[0.574]
14.575
[0.536]
13.613
[0.315]
8
[0.144]
3.660
[0.394]
10
[0.158]
4.020
beam exit
[0.354]
9
[0.197]
5
[0.000]
0
[0.197]
5
[0.354]
9
inches
Electrical Specifications: Deschutes BSI™
Model
EVKI-NABC
Connector
Pin
Description
J9
5, 9, 11, 13, 15, 17, 19, 21, 23, 25
DC Ground
J9
10, 12
1.8 V DC
J9
18, 20
3.3 V DC
J9
22, 24, 26
5 V DC
J12
3
Transmit
J12
5
Receive
J12
9
DC Ground
CAUTION
Radiaon Present
60
ROX™ µLRF Series
Deschutes BSI™
Features
ROX™ µLRF Series−Eye-Safe Micro-Laser Rangefinders
• Eye-safe: Class-1M, 1535nm laser transmitter
• Long Range: 3 km
• Hih Precision: 100-mm
accuracy single-shot
variance
• High Beam Quality:
Diffraction-limited beam,
M 2 < 1.2
• Unsurpassed Sensitivity: <
0.5 nW NEP
• High Repetition Rate: Up
to 10-Hz single-shot
• Long-life Battery: > 200
thousand shots with
rechargeable LIPO
• Long Lifetime: > 100
million shots
• Robust: Qualified to IP65
Applications
• Hunting and Sporting
Delivering the highest performance in its class
The ROX µLRF series of micro-laser rangefinder (µLRF) is a new class of highperformance, eye-safe laser rangefinder in an extremely compact, lightweight
package.
Designed for use by high-performance consumer, commercial and industrial
system integrators, the ROX µLRF, combines low-divergence diffraction-limited
laser pulses with Voxtel’s state-of-the-art APD receiver to achieve the most
sensitive, highest performing rangefinder in its size and weight class.
The ROX µLRF includes:
••
ROX Rx, a highly sensitive InGaAs APD receiver (Rx).
••
ROX Tx, a small-form-factor eye-safe diode-pumped solid-state laser
transmitter (Tx) operating at 1535 nm, with a beam expander that provides
0.5 mrad of laser divergence with near diffraction-limited beam quality.
••
Visible boresight aiming laser operating at 650 nm.
••
Custom pulse-processing and time-to-digital circuits.
••
Micro-USB serial interface compatible with bluetooth converters.
• Survey
• Mapping and Altimetry
• Robotics and Autonomous
Navigation
• UAV-Mounted Ranging and
Surveillance
• Police and Paramilitary
Surveillance
The waterproof ROX µLRF series delivers reliable ranging of targets under
direct sunlight, at night and in low visibility conditions, including fog, rain
and snow. Communication is performed over the bluetooth-compatible microUSB connector. The ROX µLRF series comes factory-configued with a variety
of operating modes and is easily user-programmed. It is designed for flexible
integration with user systems.
61
ROX™ µLRF Series
Specifications:
General
Eye Safety
Class 1M
Operating Wavelength
3 km
Power
Minimum Range
10 m
Eye Safety
Range Accuracy
100 mm
Multiple Target Detection
Measurement Rate
50 mm
5 returns per shot
with 10-m separation
10 Hz
DPSS
Operating Wavelength
1535 nm
Beam Divergence
0.5 mrad
Transmitter Optic Diameter
12 mm
Pulse Energy
100 µJ
Pulse Width (FWHM)
2 ns
Laser Classification
1M (EN 60825-1: 2007)
Lifetime
> 100 million shots
LRF Ceceiver
Detector Type
Receiver Optic Diameter
InGaAs APD
650 nm
5 mW
Class IIIa
Range: Day / Night
30 m / 450 m
Electrical
Data
Interface
• RS232
3.3 V TTL Level
• Bluetooth
v21.1 (optional)
Power Supply
LRF Transmitter
Laser Type
FVKE-NCBC
Boresight Aiming Laser
Measurement Range1
Range Resolution
62
Model
• Standby
Power
Consumption • Max Measure Rate
3.3 V to 12 V (LIPO)
80 mW
1.7 W
Mechanical
Weight
Dimensions (L xWxH, mm)
145 g
75 x 50 x 20
Environmental
Operating Temperature
-40 to 60 o C
Storage Temperature
-45 to 80 o C
Waterproof
15 mm
1 2.3-m x 2.3-m target, albedo 0.3, visibility 10 km
Dimensions:
IP65
CAUTION
Radiaon Present
References
References
[1] R. J. McIntyre, “Multiplication Noise in Uniform Avalanche Diodes,” IEEE Transactions on Electron Devices
13(1), 164–168 (1966).
Single-Photon Counting: Voxtel Publications
[A] G. M. Williams, “GHz-Rate Single-Photon-Sensitive Linear-Mode APD Receivers,” Proceedings of SPIE 7222,
72221L (2009).
[B] G. M. Williams, M. A. Compton, and A. S. Huntington, “High-Speed Photon Counting with Linear-Mode APD
Receivers,” Proceedings of SPIE 7320, 732012 (2009).
63
Voxtel, Inc.
15985 NW Schendel Ave., #200
Beaverton, OR 97006
www.voxtel-inc.com
T: (971) 223-5646
©Voxtel, Inc. 2015
F: (503) 296-2862

Photodiodes • APDs • Photoreceivers • LRF Receivers Elec

Transcription

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