NPN Transistors

C945
NPN Transistors
TO-92
P b Lead(Pb)-Free
1. EMITTER
2. COLLECTOR
3. BASE
1
2
3
0.4
Junction Temperature
Tj
+150
°C
Storage Temperature
TSTG
-40 to + 150
°C
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08-Feb-06
C945
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)
Typ
Max
Unit
Symbol
Min
hFE1
hFE2
70
40
-
700
-
Collector-Emitter Saturation Voltage
IC=100mA, IB=10mA
VCE(sat)
-
-
0.3
V
Base-Emitter Voltage
IC=100mA, IB=10mA
VBE(sat)
-
-
1.0
V
TransitionFrequence
VCE = 6V, IC = 10mA, f = 30MHz
fT
200
-
-
MHz
Collector Output Capacitance
VCB = 10V, IE = 0, f = 1MHz
Cob
-
-
3.0
pF
Noise figure
VCE = 6V, IC = 0.1mA, Rg = 10kΩ, f = 1KMHz
NF
-
4.0
10
dB
Characteristics
ON CHARACTERISTICS
DC Current Gain
VCE=6.0V, IC=1mA
VCE=6.0V, IC=0.1mA
CLASSIFICATION OF hFE1
Rank
O
Y
GR
BL
Range
70-140
120-240
200-400
350-700
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C945
FIG1. Total Power Dissipation
vs Ambient Temperature
FIG.2 Collector Current vs Collector
to Emitter Voltage
FIG.3 Collector and Bade Saturation Voltage
vs Collector Current
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FIG.4 Gain Bandwidth Product vs
Emitter Current
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08-Feb-06
C945
TO-92 Outline Dimensions
unit:mm
E
H
Dim
A
B
C
D
E
G
H
J
K
L
L
C
J
K
Min
Max
3.70
3.30
1.40
1.10
0.55
0.38
0.51
0.36
4.70
4.40
3.43
4.70
4.30
1.270TYP
2.44
2.64
14.10
14.50
D
A
B
G
TO-92
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08-Feb-06