Wafer Polish/Grinder Challenges

ACCRETECH
Equipment
Challenges for
3D Interconnect
1
Kazuo Kobayashi / Marketing Dept.
July 16th, 2008
ACCRETECH
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CHALLENGE
Handling System ( WSS / Tape )
Thinning ( Grinding WPH)
Thinning ( C M Polishing / Etching)
Cleaning ( particle / contamination)
Chemistry( Environment )
Low temperature process
Dicing (Diamond Blade >>> Z axis control)
Dicing (Ablation Laser for device cutting)
Dicing (Laser Scribing for precise energy control)
Stress relief. ( back-side + die-side )
DAF ( coating / printing / cutting )
2
Challenging Site
ACCT Tower
Building #4
(Win-Win)
Parts Control
Building #1 /
#2
(Prober)
Hachioji Plant
Bldg. for PG, Dicer & CMP
Completed in March 2005
Building #3
(Dicer, PG,
CMP)
New
Land for
next
Factory
2008: Set for further growth and increased
production capacity:
+ 15,900m2 ground, +50% vs. today
3
Polish Grinder Family
2000
2001
2002
Growing Inline Demand
ＢＧ ＋ Ｐｏｌｉｓｈ
ＰＧ ＋ ＲＭ（Remove Mount)
ＰＧ ＋ Plasma＋ＲＭ
ＰＧ ＋ ＤＡＦ＋ＲＭ
PG300
Grinder + CMP stress
release
2003
2004
2005
2006
PG300PRM
Grinder + CMP stress release
Plasma for special applications
Remover/Mounter Integrated
DAF capability included
PG300RM
Grinder + CMP stress release
Remover/Mounter Integrated
DAF capability included
PG300DRM
Grinder + CMP stress release
DAF300 module integrated for
bottom die DAF lamination
Remover/Mounter Integrated
4
Blade Dicer family
A-WD-10B
A-WD-200T
A-WD-100A
A-WD-110A
A-WD-300T
A-WD-250S
PS280
ML200
A-WD-300TX
A-WD-300T
with Load Port
5
Laser Dicer family
ML200
Laser scribing
PG300+ML300+RM
300mm/sec
IR picture
ML300RME
MAHOH LASER
MAHO :
magic in Japanese
DC tape expander
6
Prober family
7
Thin Wafers
8
Rolled up after Grinding
45um
50um
55um
9
Thin Wafers
Transparency
5 micron thick wafer
10
Rolled by device and BG tape & pattern.
HANDLING
Hard wf. Support System
Frame Handling System
Challenge
more > less
←
→
12 micron
6 micron
Si
⇒
⇒
⇒
⇒
Tape Adhesive glass wafer
COST
Accuracy (TTV, Uniformity)
Thermal Expansion Rate
Chemical
⇒ Accuracy (TTV, Uniformity)
⇒ Universal chuck
11
⇒ Chemical
Wafer Edge
WET Etched wafer
360um
180um
50um
25um
12
Wafer Edge WSS
No support
Crack
50um
Adhesive
50um
Heat expansion
Chemical resistance
Wafer support System
13
TTV : 1 > 0.75 > 0.5 micron
+ 5 μ x 10 dice. = +50 μ
Or adhesive
基準面からの
for
thickness
平坦化に接着剤
adjustment
や平面加工を採用
14
Die Strength ( after grind )
Grinding mark
Die
Die
Weak
STRONG
Grinding mark
15
300mm 5μ(1μ means)
Radial grinding mark is affective from chuck grinding condition.
Thickness <5 μ
Thinner wafer is sensitive to temperature change.
8 /12 inch vacuum area divider is high density Al2O3 ceramic
Edge induced yield issue ＝ Cut---Grind---Melt
16
HANDLING
Thermal Expansion rate
12 micron
Universal Size Chuck on Grinding
6 micron
Vacuum Chuck Transfer
17
Non-Contact Gauge
Air Inlet
• Post Process
• Pre-Process
• In-Process
• Response
• Accuracy
Air Nozzle
IR Laser
Air Blow
• Maintenance
Laser
Wet Wafer
18
DC frame chuck for thinning
Wafer
BG tape
Frame
１０μ
２０μ
Cup type Grinding wheel
Vacuum Clamping Chuck
19
Via/Plug Exposure
20
Etching after laser dicing
21
Dry Etching after GAS
=grind after Sawing
=Grind After Mahoh dicing
GAS process
GAM process
Before Thinning
Sawing/Dicing first
After GAS
(Dry Etching)
GAS + Plasma
Still stressed
Damage less
22
DAF cutting (after GAS vs GAM)
Die
Die
Die
Die
Die
Die moves after “Grind After Sawing” or “Dice Before Grinding”
DAF must be cut by laser after measuring the die to die center position.
This takes time and street width expands 3 times.
Laser Die
Die
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-10
-20
-30
-40
-50
X=
X=
X=
X=
X=
X=
X=
X=
X=
X=
X=
X=
X=
X=
X=
X=
X=
X=
X=
X=
X=
X=
14
8
14
6
14
4
14
2
14
0
13
8
13
6
13
4
13
2
13
0
12
8
12
6
12
4
12
2
12
0
11
8
11
6
11
4
11
2
11
0
10
8
10
6
-50
40
Ｙ列 ごとの Ｙズ レ量
30
20
10
0
Y=147
Y=146
Y=145
Y=144
Y=143
Y=142
Y=141
Y=140
Y=139
Y=138
Y=137
Y=136
Y=135
Y=134
Y=133
Y=132
Y=131
Y=130
Y=129
Y=128
Y=127
Y=126
Y=125
Y=124
Y=123
Y=122
Y=121
Y=120
Y=119
Y=118
Y=117
Y=116
Y=115
Y=114
Y=113
Y=112
Y=111
Y=110
Y=109
FRAME PROBER
200
X列 ご と の Xズ レ
150
100
50
0
106
107
108
109
110
111
112
113
114
115
116
117
118
119
120
121
122
123
124
125
126
127
128
129
130
131
132
133
134
135
136
137
138
139
109
110
111
112
113
114
115
116
117
118
119
120
121
122
123
124
125
126
127
128
129
130
131
Correct die
position
porous ceramic chuck
Frame chucked
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DAF coating system
Baking Stage
Inspection Stage
H4 Handler
Masking the dicing street on coating
or inc-jet print for thinner DAF.
B-Loader
Coating Stage
H4 Handler
Plasma Electrode
A-Loader
θAxis
Z-Axis
PG Side
RM Side
X-Axis
Screen printing
Y-Axis
25
“GAM system ”
MAHO
+
PG300RM + Expansion + (DB)
connectable for
Plasma.
PG300
Convertible to
Blade dicing
Flexible for Die
Bonders
RM300E
ML300
4
3
1
2
UV
Connectable to
Frame prober,
Die bonder
*-**
*-**
25
26
0
PG+Mahoh
(GAM) Integration System
Transfer Arm
Integration system for thin wafer
Mahoh Laser
Transfer Arm
27
PG and Mahoh Integration System
Grinding + Polishing 300mm wafer
Mahoh laser scribing
Plasma Etching
Removing / Mounting
28
Thin Die
Accretech : North Hall 5571.
29
Wafer Thinning System
Turn Key Solution = Handling & Cleaning
Laser Dicer Integration
ACC300
Protection Tape
Laminating
Angle Cut
Lamination for
Bump Wafer
Wafer
Thinning
Stress
Relief
Wet Polishing
Dry Polishing
Wet Etching
Dry Etching
Post Process Gauge
Die Attach Film
Laminating
For Stacked
Dicing Tape
Mounting
Protection
Tape Peeling
Dicing
Dicing Tape with
DAF Layer
Coin Stack Option
Off-line Cassette Option
Die
Bonding
Film Frame
Probing
Dicing Tape
Expanding
UV Curing Unit
30
INLINE TO INTEGRATION
Ｄｉｓｔａｎｃｅ ａｎｄ handover times
INLINE
INTEGRATION
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Challenge for future Integration
Edge grinding
WBC=DAF
RM300
PG300/BG300
United multi laser source
UV
EXPANDER
Etcher
Laser
ACC300
4
3
4
3
1
2
1
2
UV
*-**
*-**
*-**
*-**
25
0
ML300
BG tape Frame handling
Chuck table handling
Cleaning
25
0
25
0
25
0
Pressure control
For bumped wafers
via
Scribing
Trigger
&
Gettering
Plasma
Device grooving
Laser + Blade
Si
Plasma etching
BG+Polish
DAF cutting
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laser
Thank you !
MOSCONE CENTER
North Hall 5571.
Come and Feel
the die strength!
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