The LINOS Laser Modulators and Pockels Cells - Qioptiq Q-Shop

Modulators &
Pockels Cells
The LINOS
Laser
Modulators
and Pockels
Cells
The LINOS Laser Modulators
and Pockels Cells
Electro-optical modulators are divided into
modulators (for applications outside of laser
cavity) and Pockels cells (for applications
within laser cavity) on the following pages.
You can choose from a large selection of crystals for a variety of applications, apertures
and laser outputs, covering the entire wavelength range from 250 nm to 3 µm. The consistently high LINOS quality and incomparable value of our products is assured by a
combination of our many years of experience, an intelligent design, modern engineering with computer simulations and sophisticated processing.
In addition we offer a broad range of fast
and high-performance high-voltage drivers.
For details, please contact our staff from the
customer service.
!
Special features:
On request we can modify any
product for wavelengths in the
250 nm to 3 µm range, even for
one-time orders. .
Ideal areas of application:
Phase and intensity modulation;
Q-switching; pulse picking.
LINOS quality criteria:
• Best possible extinction ratio
for each crystal
• High transmission
• Patented isolation system minimizes
piezoelectric oscillation for
exceptionally precise switching
operations (optional)
646
US-Phone +1 585 223-2370
More information:
Contact us to receive our comprehensive new brochure, "Crystal
Technology," by mail, or download it from: www.linos.com/ct
UK-Phone +44 2380 744 500
Laser Modulators and Pockels Cells
Laser Modulators ____________________________
Introduction
Technincal Overview Phase Modulator PM 25
Phase Modulator PM-C-BB
Laser Modulators LM 13
Laser Modulators LM 0202
Digital Pulse Amplifier LIV 20
Analog Amplifier LAV 400
648
648
650
651
652
654
656
657
Germany-Phone: +49 (0) 551/ 6935-0
Pockels Cells ________________________________
Technical Information Product Overview
KD*P Pockels Cells LM Series
KD*P Pockels Cells MIQS 8 Series
KD*P-Pockels Cells CPC Series
KD*P Pockels Cells CIQS Series
KD*P Pockels Cells SPC 4 Series
KD*P Double Pockels Cells DPZ Series
KD*P Brewster Pockels Cell BPC 8
LiNbO3 Pockels Cells
BBO Pockels Cells BBPC Series
BBO Double Pockels Cells DBBPC Series
RTPC Pockels Cells Series
Pockels Cells Positioner
France-Phone: +33 - 47 25 20 420
658
660
661
662
663
664
665
666
667
668
669
670
671
672
647
Isolators
Laser Modulators, Introduction
Technincal Overview
Electro-optical crystals are characterized
by their ability to change optical path
length in function of an applied
external voltage. This change depends
on the direction of polarization of the
irradiated light. At λ/2 voltage, the path
length difference of orthogonally
polarized beams is just half of the
wavelength. With a suitable orientation
of the crystals, the polarization direction
of the irradiated light is rotated 90°: in
this state the light is extinguished by a
polarizer. Varying the applied voltage
allows quick modulation of the laser
beam intensity. The performance of an
electro-optic modulator can be understood very simply as that of a retardation
plate with electrically adjustable
retardation.
Series LM 0202 Modulators use the
transverse electro-optical effect: the
direction of the light beam and electric
field are orthogonal. In this configuration, long crystals with a small cross
section have a low half wave voltage
Since most of the electro-optical crystals
operate with a strong background of
natural birefringence, a compen­sation
scheme is used. Each modulator in the
LM 0202 series has four crystals as a
matched ensemble. These crystals are
fabricated with deviations in length less
than 100 nm. The crystals are operated
optically in series and electrically parallel.
The crystal orientation of the LM 0202
and LM 0202P modulators has been
optimized to minimize the retar­da­tion
caused by natural birefringence. Just as
in an ordina­ry retardation plate, the
polarization of the laser beam has to be
adjusted at 45° to the optical axis in
order to achieve a proper 90° rotation.
If the laser beam is polarized in the
direction of the optical axis, no polarization rotation, but pure phase retardation
will occur. In principle this allows the user
to operate the LM 0202 modulator as a
phase modulator. In this configu­ration,
648
the applied voltage is changed. By
subsequently adjusting voltage and
rotation, an extinction better than 250:1
can be achieved. Selected models with
better extinction ratios are available on
request.
Operating an electro-optical modulator
between crossed, or parallel, polarizers
yields an intensity variation given by the
following formula:
I = Io · sin2 (U/Uλ/2 · π/2)
Uλ/2 - half wave voltage
Io - input intensity
U - signal voltage
optimized for minimum background
retar­da­tion, two of the four crystals are
electro-optically active for phase
modulation. A special model, LM 0202
PHAS, is available with a crystal configuration that uses all four crystals for phase
modulation.
The PM 25 Phase Modulator, is a
Brewster modulator of high optical
quality and should be used for loss
sensitive applications, especially intracavity modulation. Mounting the modulator in the resonator is simple, as there is
no beam deviation or displacement.
All modulators use electro-optical crystals
that possess strong natural birefringence.
The crystals are used in order of compensation and there is no beam deviation or
displacement.
Electro-optic modulators generally
require linearly polarized laser light. If
the laser light is not sufficiently polarized
by itself, an additional polarizer must be
used.
The Intensity Modulator LM 0202 P has
an integrated polarizer that is used as an
analyzer.
The modulator voltage input plugs are
isolated from the housing and directly
connected to the crystals. A change of
the laser intensity can be observed when
US-Phone +1 585 223-2370
It has been assumed that the appropriate
offset voltage has been applied for
maximum extinction. The offset voltage
causes a shift of the intensity curve over
the voltage. The half wave voltage is
proportionally to the wavelength λ, to
the crystal thickness d and in reverse
proportional to the crystal length l:
Here n0 is the refractive index of the
ordinary beam and r63 the electro-optical
coefficient of the crystal.
In many cases it is advantageous to select
an offset voltage such that the first order
intensity varies linearly with voltage. This
is achieved by setting the offset voltage
to the value required for maximum
extinction minus
½ · Uλ/2.
The LM 0202 series modulators are
hermetically sealed. They can be
operated at pressures from 100 mbar to
1500 mbar and at a temperature range
between 0 °C to 50 °C.
Standard models are designed for
horizontal operation. Modulators for
vertical use are available by request. The
modulator windows are easily cleaned
with a mild organic solvent.
UK-Phone +44 2380 744 500
Applications
Selection Criteria
The series LM 0202 or LM 13 electrooptical modulators are typically used
when intensity, power, phase or polarization state modulation is required. The
devices are ideal for continuous or pulsed
laser applications. Standard models, in
many configurations, are available for
wavelength ranges or for definite
wavelengths between 250 to 1100 nm
and operation up to 3000 nm is possible
with special crystals.
The required wavelength and aperture
are determined based on the existing
laser system. Very high laser power, in
the multiwatt range, requires a large
aperture. Laser lines in the short wave
spectral region can work problem free
with modulators having low electrooptical sensi­tivity: this gives rise to
advantages in bandwidth and size. A
Brewster modu­lator of high optical
quality should be used for loss sensitive
applications, especially intra­cavity
modulation.
The modulators are typically used with
diode lasers, solid state lasers, ion lasers,
gas lasers or white light lasers.
Modulators &
Pockels Cells
Laser Modulators and Pockels Cells
These devices are being used in the fields
of reprography, stereo lithography, laser
projection, optical storage, printing,
research and development and communication engineering in the laser
industry.
The PM 25 and PM-CBB series are
typically used for fast intra-cavity phase
modulation. Therefore very fast control
loops, with high feedback gain for
frequency and phase stabili­zation, can be
constructed for precision lasers.
Germany-Phone: +49 (0) 551/ 6935-0
France-Phone: +33 - 47 25 20 420
649
Isolators
Phase Modulator PM 25
• Two crystals at Brewster angle
in order​of compensation
• With Brewster windows
• Very high transmission
• Connectors: 4 mm banana plugs
• Different versions for wavelength​
ranges between 250 and 1100 nm
• Please specify the wavelength or​
wavelength range and laser​
parameters when ordering.
• Wavefront distortion < λ/10
at 633​nm
• Bandwidth (3 dB) 100 MHz
• Capacitance 30 pF
• Max. continuous voltage 1500 V
• Operating temperature 10 - 45 °C
• Weight approx. 500 g
Phase Modulator PM 25
650
Prod​uct
Wavelengths​
(nm)
Power capability (W)
Transmission​
(%)
Aperture​
(mm)
λ/10-voltage at
633 nm​(V)
Order-No
PM​ADP
400-650
100 W (> 400 nm), 10 W (< 400​nm)
> 98
5x5
200 ±10 %
84 50 2030 000
PM​KD*P
250-1100
100 W (> 400 nm), 10 W (< 400​nm)
> 98
5x5
200 ±10 %
84 50 2031 000
US-Phone +1 585 223-2370
UK-Phone +44 2380 744 500
Laser Modulators and Pockels Cells
Phase Modulator PM-C-BB
Modulators &
Pockels Cells
• Brewster-cut MgO-LiNbO3 crystal
• High photorefractive damage​
threshold
• Broad wavelength range
450 – 3000​nm
• High transmission
• Compact design
• Small residual amplitude modulation
• Connector: 1 x SMA
• Built-in active temperature​
stabilization (< 10 mK) on request
• Wavefront distortion < λ/4 at 633 nm
• Bandwidth DC – 500 MHz
(> 10 MHz​resonance-free)
Phase Modulator PM-C-BB
1)
2)
Item​Tiltle
Wavelength​
(nm)
Power capability
at 1064​nm 1)
Transmis­sion 2)
Aperture
(Clear​Apertur)
λ/10-Voltage at​
1064 nm
Order-No
PM-C-BB
450-3000
> 100 W / mm2
> 98 %
1.9 mm (1.5 mm)
100 V ± 10 %
84 51 2090 0006
CW operation, depends on wavelength
excluded: LiNbO3 absorption at 2.82 - 2.84 µm
Germany-Phone: +49 (0) 551/ 6935-0
France-Phone: +33 - 47 25 20 420
651
Isolators
Laser Modulators LM 13
• Different versions: Universal​modulator, Intensity modulator (P)​with thin
film polarizer, Phase​modulator (PHAS)
• With 2 crystals in order of​
compensation
• Connectors: 4 mm banana plugs
• Different versions for wavelength​
ranges between 250 and 1100 nm
• Extinction1) > 250 : 1 (VIS, IR)
or > 100 :​1 (UV)
• Wavefront distortion < λ /4 at 633 nm
• Bandwidth (3 dB) 100 MHz
• Capacitance 46 pF
• Max. continuous voltage 800 V
• Operating temperature 10 - 45 °C
• Weight approx. 500 g
•
1)
Extinction: measured at continuous​
wave between crossed polarizers.
• Please specify the wavelength or​
wavelength range and laser​
parameters when ordering.
LM 13 (P) (PHAS)
StandardPlus
Modulators series LM 13 are also available with the crystal LiTaO3 - as
universal or intensity modulator.
LM 13 UV KD*P
2)
652
Produc​t
Wavelengths​
(nm)
Power capability​
(W)
Transmission 2)​
(%)
Aperture​
(mm)
λ/2-voltage at 355 nm​
(V)
Order-No
LM 13
250-310
0.1
> 91 / 88
Ø 1.5
240 ± 10 %
84 50 2020 020
LM 13
250-310
0.1
> 91 / 88
Ø 3.5
390 ± 10 %
84 50 2021 020
LM 13
300-390
1.0
> 95 / 92
Ø 1.5
240 ± 10 %
84 50 2023 019
LM 13
300-390
1.0
> 95 / 92
Ø 3.5
390 ± 10 %
84 50 2024 019
LM 13 P
250-310
0.1
> 91 / 88
Ø 1.5
240 ± 10 %
84 50 2026 020
LM 13 P
250-310
0.1
> 91 / 88
Ø 3.5
390 ± 10 %
84 50 2027 020
LM 13 P
300-390
1.0
> 95 / 92
Ø 1.5
240 ± 10 %
84 50 2029 019
LM 13 P
300-390
1.0
> 95 / 92
Ø 3.5
390 ± 10 %
84 50 2030 019
LM 13​PHAS
250-310
0.1
> 91 / 88
Ø 1.5
240 ± 10 %
84 50 2032 020
LM 13​PHAS
250-310
0.1
> 91 / 88
Ø 3.5
390 ± 10 %
84 50 2033 020
LM 13​PHAS
300-390
1.0
> 95 / 92
Ø 1.5
240 ± 10 %
84 50 2035 019
LM 13​PHAS
300-390
1.0
> 95 / 92
Ø 3.5
390 ± 10 %
84 50 2036 019
Transmission: measured without / with polarizing beamsplitter cube.
US-Phone +1 585 223-2370
UK-Phone +44 2380 744 500
Laser Modulators and Pockels Cells
2)
Produc​t
Wavelengths​
(nm)
Power capability​
(W)
Transmission 2)​
(%)
Aperture​
(mm)
λ/2-voltage at 633 nm​
(V)
Order-No
LM 13
400-850
0.1
> 98 / 95
3x3
420 ± 10 %
84 50 2020 000
LM 13
400-850
0.1
> 98 / 95
5x5
700 ± 10 %
84 50 2021 000
LM 13
400-850
5.0
> 95 / 92
3x3
420 ± 10 %
84 50 2023 000
LM 13
400-850
5.0
> 95 / 92
5x5
700 ± 10 %
84 50 2024 000
LM 13 P
400-850
0.1
> 98 / 95
3x3
420 ± 10 %
84 50 2026 000
LM 13 P
400-850
0.1
> 98 / 95
5x5
700 ± 10 %
84 50 2027 000
LM 13 P
400-850
5.0
> 95 / 92
3x3
420 ± 10 %
84 50 2029 000
LM 13 P
400-850
5.0
> 95 / 92
5x5
700 ± 10 %
84 50 2030 010
LM 13​PHAS
400-850
0.1
> 98 / 95
3x3
420 ± 10 %
84 50 2032 000
LM 13​PHAS
400-850
0.1
> 98 / 95
5x5
700 ± 10 %
84 50 2033 000
LM 13​PHAS
400-850
5.0
> 95 / 92
3x3
420 ± 10 %
84 50 2035 000
LM 13​PHAS
400-850
5.0
> 95 / 92
5x5
700 ± 10 %
84 50 2036 000
Modulators &
Pockels Cells
LM 13 VIS KD*P
Transmission: measured without / with polarizing beamsplitter cube.
LM 13 IR KD*P
2)
Produc​t
Wavelengths​
(nm)
Power capability​
(W)
Transmission 2)​
(%)
Aperture​
(mm)
λ/2-voltage at 1064 nm​
(V)
Order-No
LM 13
650-1000
5.0
> 95 / 92
3x3
710 ± 10 %
84 50 2023 015
LM 13
950-1100
5.0
> 94 / 91
3x3
710 ± 10 %
84 50 2023 016
LM 13 P
650-1000
5.0
> 95 / 92
3x3
710 ± 10 %
84 50 2029 015
LM 13 P
950-1100
5.0
> 94 / 91
3x3
710 ± 10 %
84 50 2029 016
LM 13​PHAS
650-1000
5.0
> 95 / 92
3x3
710 ± 10 %
84 50 2035 015
LM 13​PHAS
650-1000
5.0
> 95 / 92
5x5
1180 ± 10 %
84 50 2036 015
LM 13​PHAS
950-1100
5.0
> 94 / 91
3x3
710 ± 10 %
84 50 2035 016
LM 13​PHAS
950-1100
5.0
> 94 / 91
5x5
1180 ± 10 %
84 50 2036 016
Transmission: measured without / with polarizing beamsplitter cube.
LM 13 IR KD*P High Power
2)
Produc​t
Wavelengths​
(nm)
Power capability​
(W)
Transmission 2)​
(%)
Aperture​
(mm)
λ/2-voltage at 1064 nm​
(V)
Order-No
LM 13
700-950
10
> 94 / 91
Ø1.0
710 ± 10 %
84 50 2023 017
LM 13
950-1100
20
> 93 / 90
Ø1.0
710 ± 10 %
84 50 2023 018
LM 13 P
700-950
10
> 94 / 91
Ø1.0
710 ± 10 %
84 50 2029 017
LM 13 P
950-1100
20
> 93 / 90
Ø1.0
710 ± 10 %
84 50 2029 018
LM 13​PHAS
700-950
10
> 94 / 91
Ø1.0
710 ± 10 %
84 50 2035 017
LM 13​PHAS
700-950
10
> 94 / 91
Ø3.0
1180 ± 10 %
84 50 2036 017
LM 13​PHAS
950-1100
20
> 93 / 90
Ø1.0
710 ± 10 %
84 50 2035 018
LM 13​PHAS
950-1100
20
> 93 / 90
Ø3.0
1180 ± 10 %
84 50 2036 018
Transmission: measured without / with polarizing beamsplitter cube
Germany-Phone: +49 (0) 551/ 6935-0
France-Phone: +33 - 47 25 20 420
653
Isolators
Laser Modulators LM 0202
• Different versions: Universal​modulator, Intensity modulator (P)​with thin
film polarizer, Phase​modulator (PHAS)
• With 4 crystals in order of​
compensation
• Connectors: 4 mm banana plugs
• Different versions for wavelength​
ranges between 250 and 1100 nm
• Extinction1) > 250 : 1 (VIS, IR) or
> 100 :​1 (UV)
• Wavefront distortion < λ/4 at 633 nm
• Bandwidth (3 dB) 100 MHz
• Capacitance 82 pF
• Max. continuous voltage 800 V
• Operating temperature 10 - 45 °C
• Weight approx. 800 g
LM 0202 (P) (PHAS)
•
1)
Extinction: measured at continuous​
wave between crossed polarizers.
• Please specify the wavelength or​
wavelength range and laser​parameters when ordering.
StandardPlus
Modulators series LM 0202 are also available with the crystal LiTaO3 as universal or intensity modulator.
LM 0202 UV KD*P
1)
Product
Wavelengths​
(nm)
Power capability​
(W)
Transmission 1)​
(%)
Aperture ​
(mm)
λ/2-voltage (355nm)​
(V)
Order-No
LM 0202
250-310
0.1
> 88 / 85
Ø 1.5
120 ± 10 %
84 50 2040 003
LM 0202
250-310
0.1
> 88 / 85
Ø 3.5
200 ± 10 %
84 50 2041 003
LM 0202
300-390
1
> 93 / 90
Ø 1.5
120 ± 10 %
84 50 2049 007
LM 0202
300-390
1
> 93 / 90
Ø 3.5
200 ± 10 %
84 50 2050 011
LM 0202 P
250-310
0.1
> 88 / 85
Ø 1.5
120 ± 10 %
84 50 2043 003
LM 0202 P
250-310
0.1
> 88 / 85
Ø 3.5
200 ± 10 %
84 50 2044 004
LM 0202 P
300-390
1
> 93 / 90
Ø 1.5
120 ± 10 %
84 50 2052 013
LM 0202 P
300-390
1
> 93 / 90
Ø 3.5
200 ± 10 %
84 50 2053 006
LM 0202​PHAS
250-310
0.1
> 88 / 85
Ø 1.5
120 ± 10 %
84 50 2046 004
LM 0202​PHAS
250-310
0.1
> 88 / 85
Ø 3.5
200 ± 10 %
84 50 2047 004
LM 0202​PHAS
300-390
1
> 93 / 90
Ø 1.5
120 ± 10 %
84 50 2055 010
LM 0202​PHAS
300-390
1
> 93 / 90
Ø 3.5
200 ± 10 %
84 50 2056 006
Transmission: measured without / with polarizing beamsplitter cube
LM 0202 VIS ADP
1)
654
Product
Wavelengths​
(nm)
Power capability​
(W)
Transmission 1)
(%)
Aperture​
(mm)
λ/2-voltage (633nm)​
(V)
Order-No
LM 0202
400-650
0.1
> 97 / 94
3x3
210 ± 10 %
84 50 2001 000
LM 0202
400-650
0.1
> 97 / 94
5x5
350 ± 10 %
84 50 2002 000
LM 0202
400-650
5.0
> 92 / 89
3x3
210 ± 10 %
84 50 2010 000
LM 0202
400-650
5.0
> 92 / 89
5x5
350 ± 10 %
84 50 2011 000
LM 0202 P
400-650
0.1
> 97 / 94
3x3
210 ± 10 %
84 50 2004 000
LM 0202 P
400-650
0.1
> 97 / 94
5x5
350 ± 10 %
84 50 2005 000
LM 0202 P
400-650
5.0
> 92 / 89
3x3
210 ± 10 %
84 50 2013 000
LM 0202 P
400-650
5.0
> 92 / 89
5x5
350 ± 10 %
84 50 2014 000
LM 0202​PHAS
400-650
0.1
> 97 / 94
3x3
210 ± 10 %
84 50 2007 000
LM 0202​PHAS
400-650
0.1
> 97 / 94
5x5
350 ± 10 %
84 50 2008 000
LM 0202​PHAS
400-650
5.0
> 92 / 89
3x3
210 ± 10 %
84 50 2016 000
LM 0202​PHAS
400-650
5.0
> 92 / 89
5x5
350 ± 10 %
84 50 2017 000
Transmission: measured without / with polarizing beamsplitter cube
US-Phone +1 585 223-2370
UK-Phone +44 2380 744 500
Laser Modulators and Pockels Cells
1)
Product
Wavelengths​
(nm)
Power capability​
(W)
Transmission 1)​
(%)
Aperture​
(mm)
λ/2-voltage (633nm)​
(V)
Order-No
LM 0202
400-850
0.1
> 97 / 94
3x3
210 ± 10 %
84 50 2040 000
LM 0202
400-850
0.1
> 97 / 94
5x5
350 ± 10 %
84 50 2041 000
LM 0202
400-850
5.0
> 92 / 89
3x3
210 ± 10 %
84 50 2049 000
LM 0202
400-850
5.0
> 92 / 89
5x5
350 ± 10 %
84 50 2050 005
LM 0202 P
400-850
0.1
> 97 / 94
3x3
210 ± 10 %
84 50 2043 000
LM 0202 P
400-850
0.1
> 97 / 94
5x5
350 ± 10 %
84 50 2044 000
LM 0202 P
400-850
5.0
> 92 / 89
3x3
210 ± 10 %
84 50 2052 000
LM 0202 P
400-850
5.0
> 92 / 89
5x5
350 ± 10 %
84 50 2053 000
LM 0202​PHAS
400-850
0.1
> 97 / 94
3x3
210 ± 10 %
84 50 2046 000
LM 0202​PHAS
400-850
0.1
> 97 / 94
5x5
350 ± 10 %
84 50 2047 000
LM 0202​PHAS
400-850
5.0
> 92 / 89
3x3
210 ± 10 %
84 50 2055 000
LM 0202​PHAS
400-850
5.0
> 92 / 89
5x5
350 ± 10 %
84 50 2056 000
Modulators &
Pockels Cells
LM 0202 VIS KD*P
Transmission: measured without / with polarizing beamsplitter cube
LM 0202 IR KD*P
1)
Product
Wavelengths​
(nm)
Power capability​
(W)
Transmission 1)​
(%)
Aperture​
(mm)
λ/2-voltage (1064nm)​
(V)
Order-No
LM 0202
650-1000
5.0
> 92 / 89
3x3
360 ± 10 %
84 50 2049 001
LM 0202
650-1000
5.0
> 92 / 89
5x5
590 ± 10 %
84 50 2050 006
LM 0202
950-1100
5.0
> 90 / 87
3x3
360 ± 10 %
84 50 2049 004
LM 0202
950-1100
5.0
> 90 / 87
5x5
590 ± 10 %
84 50 2050 007
LM 0202 P
650-1000
5.0
> 92 / 89
3x3
360 ± 10 %
84 50 2052 001
LM 0202 P
650-1000
5.0
> 92 / 89
5x5
590 ± 10 %
84 50 2053 001
LM 0202 P
950-1100
5.0
> 90 / 87
3x3
360 ± 10 %
84 50 2052 004
LM 0202 P
950-1100
5.0
> 90 / 87
5x5
590 ± 10 %
84 50 2053 002
LM 0202​PHAS
650-1000
5.0
> 92 / 89
3x3
360 ± 10 %
84 50 2055 006
LM 0202​PHAS
650-1000
5.0
> 92 / 89
5x5
590 ± 10 %
84 50 2056 001
LM 0202​PHAS
950-1100
5.0
> 90 / 87
3x3
360 ± 10 %
84 50 2055 001
LM 0202​PHAS
950-1100
5.0
> 90 / 87
5x5
590 ± 10 %
84 50 2056 002
Transmission: measured without / with polarizing beamsplitter cube
LM 0202 IR KD*P High Power
1)
Product
Wavelengths​
(nm)
Power capability​
(W)
Transmission 1)​
(%)
Aperture​
(mm)
λ/2-voltage (1064nm)​
(V)
Order-No
LM 0202
700-950
10
> 91 / 88
Ø 1.0
360 ± 10 %
84 50 2049 006
LM 0202
700-950
10
> 91 / 88
Ø 3.0
590 ± 10 %
84 50 2050 010
LM 0202
950-1100
20
> 89 / 86
Ø 1.0
360 ± 10 %
84 50 2049 005
LM 0202
950-1100
20
> 89 / 86
Ø 3.0
590 ± 10 %
84 50 2050 008
LM 0202 P
700-950
10
> 91 / 88
Ø 1.0
360 ± 10 %
84 50 2052 012
LM 0202 P
700-950
10
> 91 / 88
Ø 3.0
590 ± 10 %
84 50 2053 005
LM 0202 P
950-1100
20
> 89 / 86
Ø 1.0
360 ± 10 %
84 50 2052 011
LM 0202 P
950-1100
20
> 89 / 86
Ø 3.0
590 ± 10 %
84 50 2053 003
LM 0202​PHAS
700-950
10
> 91 / 88
Ø 1.0
360 ± 10 %
84 50 2055 009
LM 0202​PHAS
700-950
10
> 91 / 88
Ø 3.0
590 ± 10 %
84 50 2056 005
LM 0202​PHAS
950-1100
20
> 89 / 86
Ø 1.0
360 ± 10 %
84 50 2055 008
LM 0202​PHAS
950-1100
20
> 89 / 86
Ø 3.0
590 ± 10 %
84 50 2056 004
Transmission: measured without / with polarizing beamsplitter cube
Germany-Phone: +49 (0) 551/ 6935-0
France-Phone: +33 - 47 25 20 420
655
Isolators
Digital Pulse Amplifier LIV 20
•
•
•
For all laser modulators with
λ/2 voltage​​​up to 400 V
High repetition rate
Compact design
•
Output Specifications:
- Signal voltage 1) 2): 70 - 420 V
- Rise-/falltime (10 - 90 %) 3):
< 15 ns, typ.​​​10 ns
- Repetition rate 4): 2 to 20 MHz (depends​​​on signal voltage)
- Offset-voltage 1) 2): 0 - 400 V
•
Input Specifications:
- Impedance 5): pulse 50 / 600 Ω /
mod.​​​600 Ω
- Low state: 0 V to + 0.4 V
- High state: 2.4 V to + 5.5 V
- Trigger threshold: + 1.5 V
- Minimum pulse width : > 30 ns
- Input-output delay, typ.: 50 ns
- Input-output jitter: < 1 ns
- Line Voltage: 230 / 115 V
- Line Frequency: 50 / 60 Hz
•
Housing Specifications:
- Dimensions (WxLxH) 260x330x
155​​​mm
- Weight: app. 9.5 kg
- Power cord and connecting cable
to​​​Modulator included
•
•
1)
Relative to ground
This voltage can be set manually or​
externally with a control voltage 0 to
+​10 V (input impendance 5 k)
• 3) Optical risetime achieved with a​
modulator LM 0202, connected with​
special cable (l = 80 cm)
• 4) Maximum signal voltage for 5 MHz​
operation is 200 V. maximum​
repetition rate for 400 V signal voltage​
is 2 MHz
• 5) Modulation allows gating of signal​
output
2)
LIV 20
656
Product
Order-No
Digital Pulse Amplifier LIV 20
84 50 2060 000
US-Phone +1 585 223-2370
UK-Phone +44 2380 744 500
Laser Modulators and Pockels Cells
Analog Amplifier LAV 400
For all laser modulators with
λ/2 voltage​​​up to 400 V
High repetition rate
Compact design
•
Output Specifications:
- Signal voltage: 400 Vpp max.
- Output current: 200 mA max.
- Signal output: BNC connector
- Frequency range: DC, 2 MHz 1)
- Offset voltage: 0 - 400 V
- Offset output: SMA connector
•
Input Specifications:
- Impedance: 600 Ω
- Input voltage range: 0 - 10 V
- Signal input: BNC connector
- Line voltage: 230/115 V (V AC
±10 %)
- Line frequency: 50/60 Hz
•
Housing Specifications:
- Dimensions (WxLxH) 260x330x
155​​​mm
- Weight - app. 9 kg
- Power cord and connecting cable
to​​​Modulator included
Modulators &
Pockels Cells
•
•
•
•
1)
The maximum frequency range​
depends on input voltage.
LAV 400
Product
Order-No
Analog Amplifier LAV 400
84 50 2060 001
Germany-Phone: +49 (0) 551/ 6935-0
France-Phone: +33 - 47 25 20 420
657
Isolators
Pockels Cells, Technical Information
The Electro-Optic Effect
5
1
The linear Electro-Optic effect, also
known as the Pockels effect, describes the
variation of the refractive index of an
optical medium under the influence of an
external electrical field. In this case certain
crystals become birefringent in the
direction of the optical axis which is
isotropic without an applied voltage.
When linearly polarized light propagates
along the direction of the optical axis of
the crystal, its state of polarization
remains unchanged as long as no voltage
is applied. When a voltage is applied, the
light exits the crystal in a state of polarization which is in general elliptical.
This way phase plates can be realized in
analogy to conventional polarization
optics. Phase plates introduce a phase
shift between the ordinary and the
extraordinary beam. Unlike conventional
optics, the magnitude of the phase shift
can be adjusted with an externally
applied voltage and a λ/4 or λ/2 retardation can be achieved at a given wavelength. This presupposes that the plane of
polarization of the incident light bisects
the right angle between the axes which
have been electrically induced. In the
longitudinal Pockels effect the direction
of the light beam is parallel to the
direction of the electric field. In the
transverse Pockels cell they are perpendicular to each other. The most common
application of the Pockels cell is the
switching of the quality factor of a laser
cavity.
Q-Switching
Laser activity begins when the threshold
condition is met: the optical amplification
for one round trip in the laser resonator is
greater than the losses (output coupling,
diffraction, absorption, scattering). The
laser continues emitting until either the
stored energy is exhausted, or the input
from the pump source stops. Only a
fraction of the storage capacity is
effectively used in the operating mode. If
it were possible to block the laser action
long enough to store a maximum energy,
then this energy could be released in a
very short time period.
A method to accomplish this is called
Q-switching. The resonator quality, which
represents a measure of the losses in the
resonator, is kept low until the maximum
658
2
3
4
Off Q-Switching
energy is stored. A rapid increase of the
resonator quality then takes the laser
high above threshold, and the stored
energy can be released in a very short
time. The resonator quality can be
controlled as a function of time in a
number of ways. In particular, deep
modulation of the resonator quality is
possible with components that influence
the state of polarization of the light.
Rotating the polarization plane of linearly
polarized light by 90°, the light can be
guided out of the laser by a polarizer.
The modulation depth, apart from the
homogeneity of the 90° rotation, is only
determined by the degree of extinction of
the polarizer. The linear electro-optical
(Pockels) effect plays a predominant role
besides the linear magneto-optical
(Faraday) and the quadratic elect��������
ro-optical (Kerr) effect. Typical electro-optic
Q-switches operate in a so called λ/4
mode.
a) Off Q-Switching
Light emitted by the laser rod (1) is
linearly polarized by the polarizer (2). If a
λ/4 voltage is applied to the Pockels cell
(3), then on exit, the light is circularly
polarized. After reflection from the
resonator mirror (4) and a further passage
through the Pockels cell, the light is once
again polarized, but the plane of
polarization has been rotated by 90°. The
light is deflected out of the resonator at
the polarizer, but the resonator quality is
low and the laser does not start to
oscillate. At the moment the maximum
storage capacity of the active medium has
been reached, the voltage of the Pockels
cell is turned off very rapidly; the
resonator quality increases immediately
and a very short laser pulse is emitted.
The use of a polarizer can be omitted for
active materials which show polarization
dependent amplification (eg. Nd:YalO3,
Alexandrite, Ruby, etc.).
US-Phone +1 585 223-2370
b) On Q-Switching
Unlike off Q-switching, a λ/4 plate (6) is
used between the Pockels cell (3) and the
resonator mirror (4). If no voltage is
applied to the Pockels cell the laser
resonator is blocked: no laser action
takes place. A voltage pulse opens the
resonator and permits the emission of
laser light.
Pulse Picking
5
1
2
3
6
4
On Q-Switching
Typically Femto-Second-Lasers emit
pulses with a repetition rate of several
10 MHz. However many applications like
regenerative amplifying require slower
repetition rates. Here a Pockels cell can
be used as an optical switch: by applying
ultra fast and precisely timed λ/2-voltage
pulses on the Pockels cell, the polarization of the Laser light can be controlled
pulse wise. Thus, combined with a
polarizer the Pockels cell works as an
optical gate.
UK-Phone +44 2380 744 500
Laser Modulators and Pockels Cells
The selection of the correct Q-switch for a
given application is determined by the
excitation of the laser, the required pulse
parameters, the switching voltage, the
switching speed of thePockels cell, the
wavelength, polarization state and
degree of coherence of the light.
Brewster Pockels cells are recommended
for lasers with low amplification, such as
Alexandrite lasers. The passive resonator
losses are minimal due to a high transmission of 99 %.
The CPC and SPC series cells are suitable
for small, compact lasers and especially
for OEM applications. They are available
as dry cells and immersion cells.
Type of Excitation
Basically, both off and on Q-switching are
equivalent in physical terms for both cw
and for pulse pumped lasers. On
Q-switching is, however, recommended in
cw operation because a high voltage
pulse and not a rapid high voltage
switch-off is necessary to generate a laser
pulse. This method also extends the life
time of the cell. Over a long period of
time, the continuous application of a
high voltage would lead to electrochemical degradation effects in the KD*P
crystal. We advice the use of an on
Q-switching driver.
Off Q-switching is more advantageous for
lasers stimulated with flash lamps
because the λ/4 plate is not required. In
order to prevent the electrochemical
degradation of the KD*P crystal in the off
Q-switching mode we recommend a
trigger scheme in which the high voltage
is turned off between the flashlamp
pulses and turned on to close the laser
cavity before the onset of the pump
pulse.
The cell CPC and SPC series are recommended for diode pumped solid state
lasers. These cells are ultra compact and
will operate in a short length resonator:
this is necessary to achieve very short
laser pulses.
Pulse Parameters
The series LM n, LM n IM, and LM n SG
cells are recommended for lasers with a
power density of up to 500 MW/cm². The
LM n and LM n SG cells are used for lasers
with very high amplification. The SG cells
with sol-gel technology have the same
transmission as the immersion cells and
both are typically used when a higher
transmission is required. At high pulse
energies LMx cells are preferred.
The level of deuterium content in an
electro-optic crystal influences the
spectral position of the infrared edge.
The higher the deuterium level the
further the absorption edge is shifted
into the infrared spectral region: for Nd:
YAG at 1064 nm, the laser absorption
decreases. Crystals, which are deuterated
to > 98 %, are available for lasers with a
high repetition rate or a high average
output power.
Pockels Cell Switching Voltage
Using double Pockels cells can half the
switching voltage. This is achieved by
switching two crystals electrically in
parallel and optically in series. The
damage threshold is very high and the
cells are mainly used outside the
resonator.
Electro optic material
The selection of the electro-optic material
depends on its transmission range.
Further on the Laser parameters and the
application as well have to be taken into
account.
For wavelengths from 0.25 μm to 1.1 μm,
longitudinal Pockels cells made of KD*P
and a deuterium content of 95 % should
be considered. If the deuterium content is
higher the absorption edge of the
material is shifted further into the
infrared. KD*P crystal cells with a
deuterium content > 98 % can be used
up to 1.3 μm.
KD*P can be grown with high optical
uniformity and is therefore recommended for large apertures.
and a high damage threshold. Therefore
BBO is recommended for Lasers with high
repetition rate and high average powers.
Modulators &
Pockels Cells
Selection Criteria
RTP, with an optical bandwidth from
0.5 μm up to 1.5 μm, combines low
switching voltage and high laser induced
damage threshold. Together with its
relative insensitivity for Piezo effects RTP
is best suited for precise switching in high
repetition rate lasers with super fast
voltage drivers.
For wavelengths from 1.5 μm up to 3 µm
we recommend LiNbO3.
Suppression of Piezo effects
Like any other insulating material electro
optical crystals show Piezo effects when
high voltage is applied. The extend of the
Piezo ringing depends on the electro
optic material and usually its effect on
the extinction ratio is negligible when
used for Q-switching. However for pulse
picking applications, which require highly
precise switching behaviour, LINOS offers
specially Piezo damped Pockels cells
which suppress these ringing effects
efficiently.
State of Polarization
The MIQS and CIQS series cells are
supplied with an integrated polarizer:
the alignment of the Pockels cell relative
to the polarizer thus becomes unnecessary. The rotational position of the cell
relative to the resonator axis can be
chosen at will. However, should the
polarization state of the light in the
resonator be determined by other
components, such as anisotropic
amplification of the laser crystal or
Brewster surfaces of the laser rod, then
the rotational position of the cell will be
determined by these factors. Thin film
polarizers are used and the substrate is
mounted at the Brewster angle. A
parallel beam displacement of 1 mm
results from this configuration and can
be compensated by adjusting the
resonator.
The spectral window of BBO also ranges
from 0.25 μm to 1.3 μm. In addition BBO
crystals provides a low dielectric constant
Germany-Phone: +49 (0) 551/ 6935-0
France-Phone: +33 - 47 25 20 420
659
Isolators
Product Overview
Faraday Isolators
Pockels Cells
Laser Modulators
Pockels Cells
Product Overview
26
660
www.linos.com/pockelscells
US-Phone +1 585 223-2370
UK-Phone +44 2380 744 500
Laser Modulators and Pockels Cells
KD*P Pockels Cells LM Series
• Optionally available as dry, immersion​
(IM) or SolGel (SG) version
• Optionally available with λ/4 disk:
LM​n (IM) (SG) WP
• Optionally available with dust​
protection caps for hermetically sealed​
installation: LM n (IM) (SG) DT
Modulators &
Pockels Cells
• KD*P-based Pockels cell
• High crystal deuteration (typical)
> 98 %
• Wave front deformation: < λ/4
• Damage threshold: > 500 MW/cm2
at​1064 nm, 10 ns, 1 Hz (typical, not​
guaranteed)
LM 8 (IM) (SG)
• Other specifications upon request
• Please state the applied wavelength​
when ordering
LM 10 (IM) (SG)
LM 12 (IM) (SG)
KD*P Pockels Cells LM Series
Pro​duct
Clear Aperture​
(mm)
Transmission typical​
(%)
Extinction ratio
(voltage-free)
λ/4 voltage
Capacity​
(pF)
Order-No
LM 8
Ø8
91
> 1000:1
3.2 kV at 1064 nm,​20°C
4
84 50 3001 005
LM 8​IM
Ø8
98
> 1000:1
3.2 kV at 1064 nm,​20°C
4
84 50 3011 002
LM 8​SG
Ø 7.5
98
> 1000:1
3.2 kV at 1064 nm,​20°C
4
84 50 3006 001
LM​10
Ø 10
91
> 1000:1
3.2 kV at 1064 nm,​20°C
5
84 50 3002 001
LM​10 IM
Ø 10
98
> 1000:1
3.2 kV at 1064 nm,​20°C
5
84 50 3012 001
LM​10 SG
Ø 9.5
98
> 1000:1
3.2 kV at 1064 nm,​20°C
5
84 50 3007 005
LM​12
Ø 12
91
> 1000:1
3.2 kV at 1064 nm,​20°C
6
84 50 3003 001
LM​12 IM
Ø 12
98
> 1000:1
3.2 kV at 1064 nm,​20°C
6
84 50 3013 003
LM​12 SG
Ø 11
98
> 1000:1
3.2 kV at 1064 nm,​20°C
6
84 50 3008 001
All order numbers valid for 1064 nm.
Germany-Phone: +49 (0) 551/ 6935-0
France-Phone: +33 - 47 25 20 420
661
Isolators
KD*P Pockels Cells MIQS 8 Series
• KD*P-based Pockels cell
• With integrated, pre-adjusted​
Brewster polarizer
• Compact design for OEM applications
• High crystal deuteration (typical)
> 98 %
• Wave front deformation: < λ/4
• Damage threshold: > 500 MW/cm2
at​1064 nm, 10 ns, 1 Hz (typical, not​
guaranteed)
MIQS 8 (IM) (SG)
• Optionally available as dry, immersion​
(IM) or SolGel (SG) version
• Optionally available with λ/4 disk:​
MIQS 8 (IM) (SG) WP
• Other specifications upon request
• Please state the applied wavelength​
when ordering
KD*P Pockels Cells MIQS 8 Series
Prod​uct
Clear aperture​
(mm)
Transmission​
typical (%)
Extinction ratio
(voltage-free)
λ/4 voltage
Capacity​
(pF)
Order-No
MIQS​8
Ø8
88
> 500:1
3.2 kV at 1064 nm,​20°C
4
84 50 3070 001
MIQS​8 IM
Ø8
95
> 500:1
3.2 kV at 1064 nm,​20°C
4
84 50 3071 017
MIQS​8 SG
Ø 7.5
95
> 500:1
3.2 kV at 1064 nm,​20°C
4
84 50 3071 024
All order numbers valid for 1064 nm.
662
US-Phone +1 585 223-2370
UK-Phone +44 2380 744 500
Laser Modulators and Pockels Cells
KD*P-Pockels Cells CPC Series
• Optionally available as dry, immersion​
(IM) or SolGel (SG) version
• Optionally available with λ/4 disk:​
CPC n (IM) (SG) WP
Modulators &
Pockels Cells
• KD*P-based Pockels cell
• Compact design for OEM applications
• High crystal deuteration (typical)
> 98 %
• Wave front deformation: < λ/4
• Damage threshold: > 500 MW/cm2
at​1064 nm, 10 ns, 1 Hz (typical, not​
guaranteed)
CPC 8 (IM) (SG)
• Other specifications upon request
• Please state the applied wavelength​
when ordering
CPC 10 (IM) (SG)
CPC 12 (IM) (SG)
KD*P Pockels Cells CPC Series
Pro​duc​t
Clear Aperture​
(mm)
Transmission
typical​(%)
Extinction ratio 1)
(voltage-free)
λ/4 voltage
Capacity​
(pF)
Order-No
CPC 8
Ø8
91
> 3000:1
3.2 kV at 1064 nm,​20°C
4
84 50 3091 001
CPC 8​IM
Ø8
98
> 3000:1
3.2 kV at 1064 nm,​20°C
4
84 50 3092 001
CPC 8​SG
Ø 7.5
98
> 3000:1
3.2 kV at 1064 nm,​20°C
4
84 50 3093 000
CPC​10
Ø 10
91
> 3000:1
3.2 kV at 1064 nm,​20°C
6
84 50 3094 000
CPC​10 IM
Ø 10
98
> 3000:1
3.2 kV at 1064 nm,​20°C
6
84 50 3094 001
CPC​10 SG
Ø 9.5
98
> 3000:1
3.2 kV at 1064 nm,​20°C
6
84 50 3096 000
CPC​12
Ø 12
91
> 3000:1
3.2 kV at 1064 nm,​20°C
8
84 50 3097 000
CPC​12 IM
Ø 12
98
> 3000:1
3.2 kV at 1064 nm,​20°C
8
84 50 3098 000
CPC​12 SG
Ø 11
98
> 3000:1
3.2 kV at 1064 nm,​20°C
8
84 50 3099 000
1)
> 1000 : 1 λ/2-voltage applied
All order numbers valid for 1064 nm.
Germany-Phone: +49 (0) 551/ 6935-0
France-Phone: +33 - 47 25 20 420
663
Isolators
KD*P Pockels Cells CIQS Series
• KD*P-based Pockels cell
• With integrated, pre-adjusted​
Brewster polarizer
• Compact design for OEM applications
• High crystal deuteration (typical)
> 98 %
• Wave front deformation: < λ/4
• Damage threshold: > 500 MW/cm2
at​1064 nm, 10 ns, 1 Hz (typical, not​
guaranteed)
CIQS 8 (IM) (SG)
• Optionally available as dry, immersion​
(IM) or SolGel (SG) version
• Optionally available with λ/4 disk:​
CIQS n (IM) (SG) WP
• Other specifications upon request
• Please state the applied wavelength​
when ordering
CIQS 10 (IM) (SG)
CIQS 12 (IM) (SG)
KD*P Pockels Cells CIQS Series
Prod​uct
Clear Aperture​
(mm)
Transmission
typical​(%)
Extinction ratio
(voltage-free)
λ/4 voltage
Capacity​
(pF)
Order-No
CIQS​8
Ø8
88
> 500:1
3.2 kV at 1064 nm,​20°C
4
84 50 3070 000
CIQS​8 IM
Ø8
95
> 500:1
3.2 kV at 1064 nm,​20°C
4
84 51 3010 0004
CIQS​8 SG
Ø 7.5
95
> 500:1
3.2 kV at 1064 nm,​20°C
4
84 50 3071 022
CIQS​10
Ø 10
88
> 500:1
3.2 kV at 1064 nm,​20°C
6
84 50 3073 000
CIQS​10 IM
Ø 10
95
> 500:1
3.2 kV at 1064 nm,​20°C
6
84 50 3074 001
CIQS​10 SG
Ø 9.5
95
> 500:1
3.2 kV at 1064 nm,​20°C
6
84 50 3075 001
CIQS​12
Ø 12
88
> 500:1
3.2 kV at 1064 nm,​20°C
8
84 50 3076 000
CIQS​12 IM
Ø 12
95
> 500:1
3.2 kV at 1064 nm,​20°C
8
84 50 3077 000
CIQS​12 SG
Ø 11
95
> 500:1
3.2 kV at 1064 nm,​20°C
8
84 50 3078 002
All order numbers valid for 1064 nm.
A closer look
The integrated brewster polarizer enables quick use - without additional adjustment of pockels cell and polarizer.
664
US-Phone +1 585 223-2370
UK-Phone +44 2380 744 500
Laser Modulators and Pockels Cells
KD*P Pockels Cells SPC 4 Series
• Optionally available as dry, immersion​
(IM) or SolGel (SG) version
• Optionally available with integrated,​
pre-adjusted Brewster polarizer
• Optionally available with λ/4 disk:​
SPC4 (IM) (SG) WP
Modulators &
Pockels Cells
• KD*P-based Pockels cell
• Very compact design for OEM​
applications
• High crystal deuteration (typical)
> 98 %
• Wave front deformation: < λ/4
• Damage threshold: > 500 MW/cm2
at​1064 nm, 10 ns, 1 Hz (typical, not​
guaranteed)
SPC 4 (IM) (SG)
• Other specifications upon request
• Please state applied wavelength when​
ordering
A closer look
The compact size of approx. 13 x 15 x 16 mm² enables size critical OEMapplications.
KD*P Pockels Cells SPC 4 Series
Pro​duct
Clear aperture​
(mm)
Transmission
typical​(%)
Extinction ratio
(voltage-free)
λ/4 voltage
Capacity​
(pF)
Order-No
SCP 4
Ø4
91
> 3000:1
3.2 kV at 1064 nm,​20°C
2
84 50 3036 007
SCP 4​IM
Ø4
98
> 3000:1
3.2 kV at 1064 nm,​20°C
2
84 50 3036 004
SPC 4​SG
Ø 3.5
98
> 3000:1
3.2 kV at 1064 nm,​20°C
2
84 50 3052 001
All order numbers valid for 1064 nm.
Germany-Phone: +49 (0) 551/ 6935-0
France-Phone: +33 - 47 25 20 420
665
Isolators
KD*P Double Pockels Cells DPZ Series
• KD*P-based Pockels cell
• Two crystals in series
• High crystal deuteration (typical)
> 98 %
• Damage threshold: > 500 MW/cm2 at​
1064 nm, 10 ns, 1 Hz (typical, not​
guaranteed)
• Optionally available as dry, immersion​
(IM) or SolGel (SG) version
• λ/4 voltage: 1.6 kV at 1064 nm, 20 °C
DPZ 8
• Other specifications on request
• Please state the applied wavelength​
when ordering
DPZ 8 (IM)
DPZ 8 (SG)
KD*P Double Pockels Cells DPZ Series
Pro​duct
Clear aperture​
(mm)
Transmission
typical​(%)
Extinction ratio
(voltage-free)
λ/2- voltage
Capacity​
(pF)
Order-No
DPZ 8
Ø8
84
> 500:1
3.2 kV at 1064 nm,​20°C
8
84 50 3041 001
DPZ 8​IM
Ø8
95
> 1000:1
3.2 kV at 1064 nm,​20°C
8
84 50 3042 000
DPZ 8​SG
Ø 7.5
95
> 1000:1
3.2 kV at 1064 nm,​20°C
8
84 50 3043 005
All order numbers valid for 1064 nm.
666
US-Phone +1 585 223-2370
UK-Phone +44 2380 744 500
Laser Modulators and Pockels Cells
KD*P Brewster Pockels Cell BPC 8
Modulators &
Pockels Cells
• KD*P-based Pockels cell
• High crystal deuteration (typical)
> 98 %
• Crystal with Brewster angle cut
• High transmission for lasers with low​
amplification
• Beam offset: 8.4 mm
• Wave front deformation: < λ/4
• Damage threshold: > 500 MW/cm2
at​1064 nm, 10 ns, 1 Hz (typical, not​
guaranteed)
• Other specifications on request
• Please state the applied wavelength​
when ordering
KD*P Brewster Pockels Cell BPC 8
Prod​uct
Clear aperture​
(mm)
Transmission
typical​(%)
Extinction ratio
(voltage-free)
λ/4 voltage
Capacity​
(pF)
Order-No
BPC 8
Ø 7.4
99
> 1000:1
2.5 kV at 755 nm,​20 °C
4
84 50 3034 001
Germany-Phone: +49 (0) 551/ 6935-0
France-Phone: +33 - 47 25 20 420
667
Isolators
LiNbO3 Pockels Cells
• LiNbO3-based Pockels cell
• Preferably for Er:YAG-, Ho:YAG-,​
Tm:YAG laser
• For wavelengths up to 3 μm
• Brewster cells BPZ 5 IR for laser
with​low amplification
• Compact design
• Wave front deformation: < λ/4
• Damage threshold: > 100 MW/cm2
at​1064 nm, 10 ns, 1 Hz (typical, not​
guaranteed)
LM 7 IR
• Other specifications on request
• Please state the applied wavelength​
when ordering
LM 9 IR
BPZ 5 IR
LiNbO3 Pockels Cell
1)
2)
668
Product
Clear aperture (mm)
Transmission typical (%)
Extinction ratio (voltage-free)
λ/4-voltage (kV)
Order-No
LM 7 IR1)
7.45 x 7.45
> 98
>100:1
3kV
84 50 3030 001
LM 9 IR1)
9x9
> 98
>100:1
3kV
84 50 3032 001
BPZ 5 IR1)
5x5
> 99
>100:1
3kV
84 50 3036 000
BPZ 5 IR2)
5x5
> 99
>100:1
3kV
84 50 3038 000
At 2 μm wavelength
At 3 μm wavelength
US-Phone +1 585 223-2370
UK-Phone +44 2380 744 500
Laser Modulators and Pockels Cells
BBO Pockels Cells BBPC Series
• Optionally available with integrated​
Brewster polarizer: BBPC n BP
• Optionally available with integrated
λ/ 4 disk: BBPC n WP
• Optionally available with Piezo​
attenuator: BBPC n pp
Modulators &
Pockels Cells
• BBO-based Pockels cell
• Suited for Q-switch applications with​
high repetition rates
• Wave front deformation: < λ/4
• Damage threshold: > 300 MW/cm2
at​1064 nm, 10 ns, 1 Hz (typical, not​
guaranteed)
BBPC
• Other specifications on request
• Please state the applied wavelength​
when ordering
BBO Pockels Cells BBPC Series
Prod​uct
Clear aperture​
(mm)
Transmission typical​
(%)
Extinction ratio
(voltage-free)
λ/4-voltage ​1)
Capacity​
(pF)
Order-No
BBPC 3
Ø2.8
98
>1000:1
3.6kV
4
84 50 3083 012
BBPC 4
Ø3.6
98
>1000:1
4.8kV
4
84 50 3083 008
BBPC 5
Ø4.6
98
>1000:1
6.0kV
4
84 50 3083 020
1)
DC at 1064 nm
All order numbers valid for 1064 nm
Germany-Phone: +49 (0) 551/ 6935-0
France-Phone: +33 - 47 25 20 420
669
Isolators
BBO Double Pockels Cells DBBPC Series
•
•
•
•
BBO-based double Pockels cell
Two crystals in series
With Piezo attenuator
Suited for Q-switch applications with​
high repetition rates
• Damage threshold: > 300 MW/cm2
at​1064 nm, 10 ns, 1 kHz (typical, not​
guaranteed)
DBBPC
• Other specifications on request
• Please state the applied wavelength​
when ordering
High quality
All pockels cells series DBBPC feature a piezodamping and are ideally
suited for applications which require a precise switch.
Double BBO Pockels Cells DBBPC Series
Prod​uct
Clear aperture​
(mm)
Transmission typical​
(%)
Extinction ratio
(voltage-free)
λ/4-voltage ​1)
Capacity​
(pF)
Order-No
DBBPC​3
Ø2.6
97
> 500:1
1.8kV
8
84 51 3020 0010
DBBPC​4
Ø3.6
97
> 500:1
2.4kV
8
84 51 3020 0011
DBBPC​5
Ø4.6
97
> 500:1
3.0kV
8
84 51 3020 0001
DBBPC​6
Ø5.6
97
> 500:1
3.6kV
8
84 51 3020 0008
1)
DC at 1064 nm
All order numbers valid for 1064 nm
670
US-Phone +1 585 223-2370
UK-Phone +44 2380 744 500
Laser Modulators and Pockels Cells
RTPC Pockels Cells Series
• Optionally available with integrated​
Brewster polarizer: RTPC n BP
• Optionally available with integrated
λ/4 disk: RTPC n WP
Modulators &
Pockels Cells
• RTP-based Pockels cell
• Suited for Q-switch applications with​
high repetition rates
• Two crystals in compensation layout
• Wave front deformation: < λ/4
• Damage threshold: > 600 MW/cm2
at​1064 nm, 10 ns, 1 Hz (typical, not​
guaranteed)
• SC version with short crystals
RTPC 4 SC
• Other specifications on request
• Please state the applied wavelength​
when ordering
RTPC 4
RTPC Pockels Cell Series
Prod​uct
Clear aperture​
(mm)
Transmission
typical​(%)
Extinction ratio
(voltage-free)
λ/4 voltage ​1)
Capacity​
(pF)
Order-No
RTPC 4​SC
Ø3.6
98
> 200:1
1.3kV
3
84 50 3080 021
RTPC 4
Ø3.6
98
> 200:1
0.65kV
3
84 51 3030 0007
1)
DC at 1064 nm
All order numbers valid for 1064 nm
High quality
An extremely low switch-voltage combined with high damaging
threshold enable applications where a precise switching with high repetition rates and very fast drivers is essential.
Germany-Phone: +49 (0) 551/ 6935-0
France-Phone: +33 - 47 25 20 420
671
Isolators
Pockels Cells Positioner
• Compact and stable design
• Easy adjustment of yaw, pitch
and​rotation
• Adjustment via fine thread screws
• For Pockels cells with a diameter of
up​to 35 mm
• Optionally special OEM modifications​
available
Positioner 25
Positioner 35
Pockels Cells Positioner
672
Product
Diameter Pockels cell
(mm)
Tilt range
Beam height
(mm)
Dimensions
(mm3)
Order-No
Positioner 25
12.7
±4°
24
46 x 46 x 40
84 50 3021 127
Positioner 25
19
±4°
24
46 x 46 x 40
84 50 3021 190
Positioner 25
21
±4°
24
46 x 46 x 40
84 50 3021 210
Positioner 25
23
±4°
24
46 x 46 x 40
84 50 3021 230
Positioner 25
25
±4°
24
46 x 46 x 40
84 50 3021 250
Positioner 25
25.4
±4°
24
46 x 46 x 40
84 50 3021 254
Positioner 35
35
±4°
24
56 x 54 x 40
84 50 3021 350
US-Phone +1 585 223-2370
UK-Phone +44 2380 744 500