2SA733

2SA733
SOT-23 Plastic-Encapsulate Transistors(PNP)
FEATURE
z Collector-Base Voltage
z Complement to 2SC945
MAXIMUM RATINGS(Ta=25℃ unless otherwise noted)
Symbol
Parameter
SOT-23
Value
Unit
VCBO
Collector-Base Voltage
-60
V
VCEO
Collector-Emitter Voltage
-50
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current -Continuous
-150
mA
PD
Collector Power Dissipation
200
mW
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55-150
℃
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC= -5uA,IE=0
-60
V
Collector-emitter breakdown voltage
V(BR)CEO
IC= -1mA , IB=0
-50
V
Emitter-base breakdown voltage
V(BR)EBO
IE= -50uA, IC=0
-5
V
Collector cut-off current
ICBO
VCB= -60 V , IE=0
-0.1
uA
Emitter cut-off current
IEBO
VEB= -5 V ,
-0.1
uA
DC current gain
hFE
VCE= -6 V, IC= -1mA
IC=0
120
475
IC= -100mA, IB=- 10mA
Collector-emitter saturation voltage
VCE(sat)
Base-emitter voltage
VBE(on)
VCE=-6V,IC=-1.0mA
-0.58
Transition frequency
fT
VCE=-6V,IC=-10mA
50
Collector output capacitance
Cob
VCB=-10V,IE=0,f=1MHZ
Noise figure
NF
VCE=-6V,IC=-0.3mA,
Rg=10kΩ,f=100HZ
-0.18
-0.3
V
-0.62
-0.68
V
MHz
4.5
7
pF
6
20
dB
CLASSIFICATION OF hFE
Rank
Range
L
H
120-220
220-475
MARKING
FASTSTAR SEMICONDUCTOR CO.,LTD.
CS
1/2
www.faststar.com.cn
2SA733 Typical Characterisitics
Static Characteristic
-16uA
-14uA
-12uA
-10uA
-8uA
-6uA
-1
IC
Ta=100℃
hFE
-18uA
-2
——
COMMON EMITTER
VCE=-6V
COMMON
EMITTER
Ta=25℃
DC CURRENT GAIN
COLLECTOR CURRENT
hFE
300
-20uA
-3
IC
(mA)
-4
200
Ta=25℃
100
-4uA
IB=-2uA
-0
-0
-2
-4
-6
-8
COLLECTOR-EMITTER VOLTAGE
VCEsat
-500
——
VCE
0
-0.1
-10
-3
-1
-0.3
-10
COLLECTOR CURRENT
(V)
IC
VBEsat
-1.2
-100 -150
-30
IC
(mA)
IC
——
BASE-EMITTER SATURATION
VOLTAGE VBEsat (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
-300
-100
Ta=100℃
Ta=25℃
-30
-0.8
Ta=25℃
Ta=100℃
-0.4
β=10
β=10
-10
-0.3
-3
-1
-30
-10
COLLECTOR CURRENT
IC
-150
-10
—— VBE
Cob/ Cib
20
——
IC
(mA)
VCB/ VEB
f=1MHz
IE=0/IC=0
Ta=25℃
Cib
(pF)
Ta=100℃
Cob
CAPACITANCE
C
-10
-100 -150
-30
COLLECTOR CURRENT
10
IC
(mA)
(mA)
-30
-3
Ta=25℃
-1
3
-0.3
-0.1
-0.2
-0.4
-0.6
-0.8
1
-0.1
-1.0
fT
300
—— IC
-1
-3
REVERSE VOLTAGE
V
-0.3
BASE-EMMITER VOLTAGE VBE (V)
PC
250
-10
-20
(V)
—— Ta
VCE=-6V
COLLECTOR POWER DISSIPATION
PC (mW)
(MHz)
Ta=25℃
fT
TRANSITION FREQUENCY
-3
-1
-0.5
COMMON EMITTER
VCE=-6V
-100
COLLECTOR CURRENT
IC
-0.0
-0.2
-100 -150
200
100
-1
-3
-30
-10
COLLECTOR CURRENT
IC
(mA)
200
150
100
50
0
-100
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
(℃ )
150