CMB75N03/CMP75N03/CMI75N03

CMB75N03/CMP75N03/CMI75N03
N-Ch 30V Fast Switching MOSFETs
General Description
Product Summery
The 75N03 is N-ch MOSFETs
BVDSS
with extreme high cell density ,
RDSON
30V
which provide excellent RDSON
and gate charge for most of the
ID
6m
75A
Applications
synchronous buck converter
LED POWER CONTROLLER
DC-DC & DC-AC CONVERTERS
HIGH CURRENT, HIGH SPEED SWITCHING
SOLENOID AND RELAY DRIVERS
MOTOR CONTROL, AUDIO AMPLIFIERS
applications.
Features
Simple Drive Requirement
TO263 / TO220 / TO262 Pin Configuration
Fast Switching
Low On-Resistance
GD
Absolute Maximum Ratings
G
D
S
S
TO-263
TO-220
(CMB75N03)
(CMP75N03)
G D S
TO-262
(CMI75N03)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
30
V
VGS
ID@TC=25
ID@TC=100
IDM
V
20
Gate-Sou ce Voltage
Continuous Drain Current 1
75
A
1
50
A
220
A
Continuous Drain Current
Pulsed Drain Current
2
3
EAS
Single Pulse Avalanche Energy
400
mJ
IAS
Avalanche Current
50
A
Total Power Dissipation
120
W
TSTG
Storage Temperature Range
-55 to 175
TJ
Operating Junction Temperature Range
-55 to 175
PD@TC=25
Thermal Data
Symbol
R
R
Parameter
Typ.
Max.
Unit
JA
Thermal Resistance Junction-ambient 1
---
62
/W
JC
Thermal Resistance Junction-case
---
1.5
/W
1
CMB75N03/CMP75N03/CMI75N03
N-Ch 30V Fast Switching MOSFETs
Electrical Characteristics (TJ=25
Symbol
BVDSS
BVDSS
, unless otherwise noted)
Parameter
Conditions
Drain-Source Breakdown Voltage
TJ BVDSS Temperature Coefficient
RDS(ON)
Static Drain-Source On-Resistance2
VGS(th)
Gate Threshold Voltage
Min.
Typ.
Max.
VGS=0V , ID=250uA
30
---
---
Reference to 25
---
0.035
---
VGS=10V , ID=40A
---
---
6
VGS=4.5V , ID=20A
---
---
12
VGS=VDS , ID =250uA
1
---
3
VDS=24V , VGS=0V
---
---
1
VDS=24V , VGS=0V , T C = 125 °C
---
---
25
, ID=1mA
Unit
V
V/
m
V
uA
IDSS
Drain-Source Leakage Current
IGSS
Gate-Source Leakage Current
VGS
---
---
100
nA
gfs
Forward Transconductance
VDS=10V , ID=40A
---
50
---
S
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
---
3.3
20V , VDS=0V
Qg
Total Gate Charge
ID = 4 0 A
---
---
42
Qgs
Gate-Source Charge
V DS = 2 4 V
---
---
52
Qgd
Gate-Drain Charge
VGS = 5 V
---
---
26
Turn-On Delay Time
V DS = 1 5 V
---
9
---
Rise Time
ID = 4 0 A
R G =3.3 ,V GS =10V
---
100
---
Turn-Off Delay Time
---
37
---
Fall Time
R D =0.37
---
60
---
---
1900
---
---
800
---
---
300
---
Min.
Typ.
Max.
Unit
Td(on)
Tr
Td(off)
Tf
Ciss
Input Capacitance
VDS=25V , VGS=0V , f=1MHz
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
nC
ns
pF
Diode Characteristics
Symbol
Parameter
Conditions
1
IS
Continuous Source Current
ISM
Pulsed Source Current2
VSD
2
Diode Forward Voltage
VG=VD=0V , Force Current
VGS=0V , IS=75 A , TJ=25
Note :
2
1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.
300us , duty cycle
2%
2.The data tested by pulsed , pulse width
3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=50A
2
---
---
75
A
---
---
220
A
---
---
1.28
V