Welcome to Applied Materials

International DAAD Summer School
2011
Welcome to Applied Materials
Who We Are
Applied Materials is the global leader in providing innovative equipment,
services and software to enable the manufacture of advanced semiconductor,
flat panel display and solar photovoltaic products. Our technologies help make
innovations like smartphones, flat screen TVs and solar panels more affordable
and accessible to consumers and businesses around the world. At Applied
Materials, we turn today’s innovations into the industries of tomorrow.
2
1970+
1990+
Computing
Communications
2010+
Energy and Environment
At A Glance
Applied Materials solar energy system at its campus in
Sunnyvale, CA, is one of the largest corporate solar
power installations in the U.S.
3
Ticker:
Nasdaq: AMAT
Market Cap*:
$16.5 billion
Fiscal 2010 Revenue:
$9.5 billion
Fiscal 2010 R&D:
$1.1 billion
Founded:
November 10, 1967
Headquarters:
Santa Clara, California
Global Presence:
92 locations in
21 countries
Manufacturing:
China, Germany, Israel, Italy,
Singapore, Switzerland,
Taiwan, United States
Employees:
~13,000 worldwide
Patents:
~8,200 issued
* As of October 29, 2010
Fiscal year-end October 31, 2010
Applied Materials Milestones
Opened Xi’an Global
Solar R&D Center
Became world’s
leading semiconductor
equipment supplier
Applied Materials
Japan established
Applied Materials
Taiwan
established
Company
established
1967
1971
1979
First office opens
in Europe
1984
1989
Service center
opens
in the People’s
Republic of China
1991
Broadened solar PV
offerings with HCT
Shaping Systems
acquisition
Acquired Semitool,
Inc., a leader in
advanced
semiconductor
packaging and
copper deposition
Entered metrology
and inspection
via Opal Inc./Orbot
Instruments, Ltd.
acquisitions
1992
1993
1997
Entered the TFT-LCD
equipment market
First office opens
in Singapore
Applied Materials
Korea established
2006
2007
Entered solar
equipment industry
via TFT-LCD PECVD
array technologies
and Applied Films
Corp. acquisition
2008
2009
Expanded solar PV
offerings via Baccini,
S.p.A. acquisition
Named world’s
leading solar PV
equipment supplier
4
Overview – Data as of Q4’10
2010
Opened
Singapore
Operations
Center and
Tainan
Manufacturing
Center
Applied Film’s History
1850/51
1953
Foundation of
Leybold
in Cologne
and Heraeus in
Hanau
1967
1976
Leybold
merged
with Heraeus
1993
2000
2002
2004
Applied Films
AFC acquired the
Corporation (AFC)
Large Area Coating Div. from
founded
BPS
BOC Coating Technology
operated under VACT
5
2006
AFC
merged
with
Applied
Materials
AFC acquired
the Helix
Technology
In-Line Division,
Tainan
Oerlikon Buerle acquired
LH and merged with
Balzers creating BPS
Temescal, later became
Airco Coating Technology
2005
AFC
acquired
VACT
It All Starts With Silicon
Semiconductor
Chips
Flat Panel
Displays
Nanomanufacturing
Technology
6
Solar
Photovoltaic
Cells
Nanomanufacturing Technology
Combining two
core strengths of
Applied Materials:
Nano
Manufacturing
Leading-edge innovation
Practical application
Bringing innovative, technical concepts to the factories of the world and
enabling customers to develop outstanding products
7
Overview – Data as of Q4’10
Leveraging Our Core Competencies
1. Thin films engineering
2. Commercializing sophisticated systems
3. Global reach
Applied’s nanomanufacturing expertise makes microchips, LCD
displays and PV solar panels possible and affordable
8
Overview – Data as of Q4’10
Delivering Manufacturing Scale
Drives Lower Costs
FIRST
Cost Per Transistor
20,000,000x
cost reduction
over 30 years1
THEN
Cost Per Area
20x
cost reduction
over 15 years2
NOW
Cost Per Watt
Toward grid parity
AT 1976 TRANSISTOR PRICES
AN iPOD® WOULD HAVE COST $3.2B
1 Source: SIA, IC Knowledge LLC
2 Source: Display Search, Nikkei BP, Applied Materials
9
Overview – Data as of Q4’10
A Multi-business Company
DISPLAY
DISPLAY
FY’06
FY’10
REVENUE
REVENUE
REVENUE BY SEGMENT
10
Overview – Data as of Q4’10
Global Revenue Base
12%
NORTH AMERICA
10%
EUROPE
FY10 REVENUE BY GEOGRAPHY
11
Overview – Data as of Q4’10
78%
ASIA
Global Capabilities
Germany
Texas
China
Switzerland
Israel
Italy
California
Taiwan
Singapore
Worldwide manufacturing and/or R&D centers
12
Overview – Data as of Q4’10
Reporting Segments
13
SILICON SYSTEMS
GROUP
DISPLAY
ENERGY &
ENVIRONMENTAL
SOLUTIONS
APPLIED GLOBAL
SERVICES
Pursuing growth in
emerging logic,
emerging memory and
packaging technologies
Lowering cost and
improving performance of
displays
Lowering the
cost of electricity
Optimizing output and
efficiency of semiconductor,
display and solar fabs
through services, equipment
and automation software
Overview – Data as of Q4’10
Silicon Systems Group:
Enabling Semiconductor Advances
 #1 in Wafer Fab Equipment and
Wafer-Level Packaging Equipment
 Systems are mainstay of virtually every
advanced semiconductor factory
 Leading position in 6 out of 10 key
advanced chip processes
Global consumer class expansion will
drive demand for mobile PCs, smart
phones and consumer electronics
* Source: VLSI Resarch, November 2009
14
Overview – Data as of Q4’10
Semiconductor – Tremendous
Development
1971
4 bit Microprocessor, Intel, 1971
Smallest Technology Dimension
Today
State-of the Art Microprocessor, AMD, since 2005
AMD PMOS transistor with
physical gate length of 42nm
Source: Semiconductor Insights Inc.
DRAM – Moore´s Law
Experience Curve
Driven by Technology
1,E-01
1990
2000
2008
DRAM Price [$cents / bit]
1,E-02
1,E-03
1,E-04
1,E-05
PEF 40%
1,E-06
1,E-07
1,E+12
10000
Smallest Technology Dimension [nm]
1980
1000
100
Indicated year when volume share
of new technology node > 5%
10
1,E+14
1,E+16
1,E+18
Cumulated bits
Source: Applied Materials, Semiconductors Group
1,E+20
1975
1985
1995
Years
2005
Cell Phone Demand
Cell Phones (Million Units)
 Global 2009 shipments were 1.2 billion units, down ~1% YoY
 Global 2010 shipments estimated to be 1.45 billion units, up 15% YoY
Source: Gartner Dataquest September,2010)
17
Semi Industry Status – Data as of Q4’10
PC Portables
 Global 2009 shipments were 169.9 million units, up 19.8% YoY
 Global 2010 shipments estimated to be 217.0 million units, up 27.7% YoY
PC Portables (Millions of Units)
300
250
200
150
100
50
0
2000
2001
2002
Source: Gartner Dataquest ( September 2010)
18
Semi Industry Status – Data as of Q4’10
2003
2004
2005
2006
2007
2008
2009 2010E 2011F
Flash Memory Phenomenon
45,000
40,000
35,000
Millions of MB
30,000
25,000
32GB NAND
20,000
Ultra portable PC
with 16GB NAND
15,000
iPhone with
8GB NAND
10,000
NAND
Flash
5,000
0
2000
DRAM
2001
2002
2003
2004
2005
2006
2007
2008
2009
2010F 2011F 2012F
NAND Bit Growth CAGR est. 77% for 2009 – 2014F
Source: Gartner Dataquest (September 2010)
19
Semi Industry Status – Data as of Q4’10
Technology Center Alzenau
 Display Coatings
– Color Filter
– TFT
– OLED
 Glass Coatings
– Architectural glass
– Automotive glass
 Solar Coatings
– Wafer based solar cells
– Thin film solar cells
– Flexible solar cells
 Roll to Roll (Web) Coatings
– Plastic-foils and films
– Paper
– Stainless steel
Display
Enabling Display Market Growth
 Over 1,000 display systems in the field
 Lead each major advance in panel
manufacturing size
 High throughput and uniformity across
large glass substrates
 Enabling new technologies such as touch
panel and OLED
 TFT-LCD market expected to
grow from $70 billion in 2009
to $100 billion in 2010*
* Source: Display Search
22
Overview – Data as of Q4’10
77%
OF ALL TVS WILL
BE LCD IN 2010
Display
Experience Curve
Driven by Technology
100,0
100%
1997 2000
2005
2009
Display Substrate Area [m2]
PEF 35%
10%
announced
Desktop
10,0
Laptop
2.6 meters
1,0
Gen 7
Gen 6
Gen 8 = 5.7 square meters
Gen 5
2.2 meters
Relative Costs [%]
TV
Gen 4
Gen 3.5
Gen 3
Gen 2.5
Gen 2 Gen 2.5 Gen 3 Gen 3.5 Gen 4
Gen 5 Gen 6
Gen 7
370 x
470mm
4 up
10.4”
2.6 meters
6 up
12.1”
6 up
15 ~ 17”
6 up
19 ~ 24”
6 up x 37” wide
6 up x 52” wide
0,1
1%
1
10
100
Cumulated Display Area [million m2]
Source: Applied Materials, Display Group
1000
1990
Jan-901995
Jan-95 2000
Jan-00 2005
Jan-05 Jan-10
2010 Jan-15
2015
Years
Glass Size Migration – Enabling Larger Displays
2004
32” x 8
Gen 6
1.5 x 1.85m
2007
46” x 8
Gen 8.5
2.2 x 2.5m
2008
65” x 6
Gen 10
2.85 x 3.05m
AKT-25K
AKT-55K
Principle LCD
iquid crystals can tilt the oscillation plane of light
liquid crystals can be oriented through electric fields
25
Principle LCD
AMAT
CrO x/Cr
New Aristo
R
G
B
PiVot
OFF
OFF
BACKLIGHT
Black Matrix
SiO2/ITO Transparent Electrode
Al, Mo
Gate, Source/Drain
Al
Adressing Lines
ITO
Pixel Electrode
ON
26
Typical TFT with a-Si
AMAT PVD
Al (source & drain)
Etch stop
Ti
Passivation (SiN )x
n + α - Si
undoped α - Si
Pixel electrode
(ITO)
Gate insulator
(SiN )
x
Gate insulator
(TaO x)
SiO 2
Glass
Gate
27
Manufacturing of AMLCD Displays
28
Principle of the Sputter
Process
29

Positive ions (1) are accelerated towards
the cathode (2) by an applied voltage and
hit the target (3)

Target Atoms (4) and secondary electrons
(5) are emitted

The atoms condensate in the environment
and on the substrate (6)

Subsequent ionization provides the plasma
(7a, 7b)

A magnetic field (not shown) improves the
sputter yield

The positive anode comprises the cathode
surrounding and the vacuum chamber itself

Typical distance target-substrate is in the
cm-range

Substrate heating is done from the back
side of the substrate
Sputtered Dielectric Layers - TwinMag
Momentary
cathode
Momentary
anode
Momentary electr. Field strength
Momentary
anode
Momentary
cathode
Momentary electr. Field strength
 Surface charges are neutralized by AC current (20 – 50 kHz); arcing
is suppressed
 Conductive targets necessary (e. g. Si:B or Si:P; about 1 Ωcm)
30
Planar vs rotary – general differences
planar cathode
Substrate
rotary cathode
Substrate
S
Deposition of shields
• reduce shield life
• coating effencies
moving magnet
static magnet
Rotary provides even more stable process and
improved coating efficiency
31
Planar vs rotary – surface scanning
Planar
Rotary
π x diameter
width
Non NAR ITO
No full target scan leads to
redeposition on target surface edge
continuous scan keeps target surface
clean
Full plasma scan over target surface and increased target
volume enables longer run time
PVD Platforms
 New Aristo: Color Filter and Touch Panel
– Transparent electrode
– TP metallization, sensor and passivation
– Dynamic coating
– Very high productivity
 PiVot: TFT array and pixel ITO
– Metallization Gate and S/D
– Pixel electrode
– Static coating
– Very low particle generation
33
Rotary Targets for CF and Array PVD
Al/Ti
Mo/MoTi
• High target utilization
Top Shielding
Si
Cu
Target
Plasma Racetrack
• Fewer target replacements
• High target volume for long run time
• Minimized re-deposition along the target
• Pre-sputter unit applicable
• Bonded target: Mo, ITO
• Monolithic: Al, Ti, Cu
34
Rotation
ITO
Bottom Shielding
New Aristo family
Common electrode:
- Highly Transparent
- Conductive
- Uniform
- Industry Standard Material: ITO
Gen
System
Maximum
Height
in mm
Maximum
Length
in mm
Minimum
Cycle Time
In sec
<4
New Aristo 1200
1200
1200
20
4,5
New Aristo 1200 L
1200
1500
25
New Aristo 1400
1400
1300
20
New Aristo 1400 L
1400
1530
25
6
New Aristo 1800
1870
1500
25
7
New Aristo 1800 L
1870
2200
30
7.5
New Aristo 2200 S
2250
1950
30
8.5
New Aristo 2200 M
2250
2500
30
5
5,5
Touch Panel:
- SiO2, ITO
- Al, AlNd, Mo, MoNb
Special applications which
requires dynamic coating
Equipment for FPD
230°C
130°C
CVD
Polarizer
Common Electrode
(ITO)
CFPVD
RGB
S/D Metal
SiNx
n+ a-Si
LC
Spacer
ITO
Physical
Vapor
Deposition
(Sputter)
a-Si
SiNx
Mo
Mo
ArrayPVD
EBT
36
Al
Al
Energy and Environmental Solutions
Solar
Lighting
Web
Glass
ATON
New
Technologies
Nanotech
PWS + Baccini
cSi work cells
TF battery
LED
OLED
TF
SunFab® (aSi / µc
complete lines)
PV Solar Electricity
R2R
architectural
applications
Energy Efficient Products
Electrochromic
windows
Roll-to-Roll
Principle of Roll-to-Roll Coating
Applied Flex Electronic Production Solutions
1980s
2002
2004
2008
2010
Vision
SmartWeb “Flex”
 Modular configs for PVD & CVD
 Fully modular for all processes
 Highest performance / productivity
SmartWeb 3-400
 400mm width
“A” Type Sputter Tool
 3 cathodes per drum
 Production R2R sputtering
 Modular platform
 < 2m substrate widths
 Flex Electronics development
SmartWeb “XL”
 < 6 cathodes per drum
 600, 1000, 1400mm widths
 ITO & window films
 6 or 12 cathodes, 1or 2 drums
SmartWeb 6-800
 High volume production
 800mm width
 Flexible Electronics, PV, Displays
 6 cathodes & 2 drums
 High volume production
MultiWeb
 2.1m width
 5 cathodes per drum
 Improved maintenance
40
 Advanced window films
 Flex Electronics proven
Global Leadership in Web Coating
41
41
Applied’s Industry Proven Experience
Vacuum R2R Coating Equipment
More than 600 Web Coater Shipped
TopMetTM
MultiWebTM
TopBeamTM
SmartWebTM
MultiMetTM
World’s
Largest & Fastest
Evaporation
Metallizer
World’s Largest
Roll-to-Roll
Sputter Machine
Highest Flexibility
Electron
Evaporators for
Blanket & Gradient
Oxides
First Modular
R2R Coater
Optimized for
Flex Electronics
Thin Film
Capacitor
Manufacturing with
In-Situ Patterning
Up to 4.5 m wide,
20m/sec
2.1 m wide,
With 5 cathodes
Flexible, versatile,
scalable
100µm resolution,
8m/sec, on 0.7µm
thick polymer
Web Markets and Core Competencies
Consumer Packaging
Standard
Flexible Electronics
Specialized
Devices
Components
TopMet
TopBeam
MultiWeb
SmartWeb
MultiMet
Evaporation
Metallizers
Up to 4.5m wide,
20 m/sec
Electron Beam
Evaporators for
Blanket & Gradient
Oxides
Sputter Machine
2.2m wide with 5
cathodes
Web Coater
Optimized
for Flex
Electronics
Capacitor
Manufacturing with
In Situ Patterning at
8 m/sec
 Food packaging
 Barrier packaging
 Labels
 Gift wrapping
 Innerliner
Transparent packaging
 Security coatings
 Anti-counterfeit
 Anti-Reflection / Anti-Static
 Window Films
 Touch Panels
 Flexible printed circuits
 Flexible solar cells
 Flexible displays
 Film capacitors
 Medical sensors
Web Product Portfolio
Most advanced modular R2R sputtering system for
flexible electronics and PV (Up to 1.4m wide)
Applications
• Flex Touch Panels (ITO, Dielectric Layers, Metals)
• Flex PV
(TCO Front Contact, Metal Back Contact)
• Display
(TFT applications in development)
SmartWeb
World`s largest & fastest evaporation metallizers for
packaging (up to 4.5 m wide, 20m/sec coating speed)
Standard applications
TopMet Std. for Al Barrier Metallization
New advanced applications
TopMet
TopMet Clear for transparent AlOx barrier layers
TopMet Melamine for enhanced barrier performance
TopMet - the Machine ...
... to metallize the materials ...
... for sophisticated packaging systems.
TopMet 2450
46
Evaporator System
Staggered and patented boat design for highest coating
uniformity.
SmartWeb focused on strategic markets
for Touch Panel, Display and Flex PV
Touchscreen (Visual Planet)
RFID (PolyIC)
OLED (GE)
PV (Unisolar)
Display (ASU)
Battery (IPS)
Applications primarily driven by form (shape, size, weight)
Expanding Market  Scaling Production
Mobile to Large Size
SmartWeb
3-400
SmartWeb
6-800
SmartWeb XL
6-1400
Flexible Touch Panel Requirements (Basics)
Flex Touch Element
Key Requirements
ITO
 High transmittance, no absorption
in the visible spectrum
TCO (e.g. ITO)
 High conductivity & uniformity
Barrier (e.g. SiO2)
Polymer (e.g. PET)
SiO2
 < 10-1 WVTR & OTR
 Uniform, defect-free barrier
 Optically tuned to ITO for optimal
transmission in visible spectrum
50
Invisible ITO
Advanced Layer Systems for Touch Panel
RITO
RITO
REtch
REtch
ITO
Y-Layer
X-Layer
SiO2
(HardCoat)
ITO
SiO2
(HardCoat)
PET
PET
4-layer system
RITO
REtch
Index Matching
RITO
REtch
Invisible !
SmartWeb Design and POA
SmartWeb XL 12-1400: 2 Process Modules with 12 Process Stations
52
Completely Interchangeable Cathodes
53
Wide Variety of High Performance Sources
High utilization planar cathodes
Super-high utilization rotatable cathodes
TwinMagTM planar cathodes for dielectrics
TwinMagTM rotatable cathodes for dielectrics.
In development
In-situ preclean sources
Delivering Flexible Process Capability
54
54
Solar
Primary Energy – Future Scenario
Assuming 10 bn. People with Our Today’s Energy Need in 2100
End of Century
120
10
100
8
80
6
60
4
40
2
20
0
0
Low Energy
Consumption
High Energy
Consumption
Assuming 10 billion people with our
today’s energy need
12
600
10
500
8
400
6
300
4
200
2
100
Energy Need [TWh/a]
12
Energy Need [TWh/a]
World population in bn. people
¼ of world population (~1,5 bn) consumes
¾ of primary energy (~90.000 TWh)
World population in bn. people
Today
0
0
Low Energy
Consumption
High Energy
Consumption
56
Customer Needs
Customer Application Requirements Define Related Technology
on-grid
€/kWh
off-grid
€/hr light
consumer
W/m²
high efficiency
g/W
Source: Fraunhofer ISE
€/m² / aesthetics
€/W
57
flexibility
W/mm²
Mainstream PV Applications and
Technologies
RESIDENTIAL
COMMERCIAL ROOFTOP
UTILITY SCALE
Crystalline Silicon
 High efficiencies
 Suitable for space
constrained applications
 Rooftop applications
58
Thin Film
 Lower cost to manufacture
 Higher range of operating
temperature & ambient light
 Utility scale solar farms
Competitiveness
Electricity Generation Cost PV versus Electricity Price
$ Production / Watt
=
Cost / m2
Watt / m2
e.g. Germany
e.g. Spain
Ref: W. Hoffmann personal estimates
59
a-Si:H/µc-Si:H Tandem Cells
light
a-Si:H/µc-Si:H general advantages
silicon technology
real thin-film concept
ideal combination of materials for
tandem cells
high efficiencies demonstrated
Glass Substrate
Transparent Conductor
p
Amorphous Silicon
n
~2 µm
µc-Si:H compared to a-Si:H
red/NIR-response
high stability
p
Microcrystalline Silicon
n
TCO (AR)
challenges
TCO/light trapping
high deposition rates necessary
large area deposition
Cost / m2
Back Contact
Watt / m2
60
60
ESATTO TECHNOLOGY™ EVENT | EXTERNAL USE
Extended Spectral Sensitivity (a-Si:H/µc-Si:H)
- broadened spectral sensitivity compared to a-Si:H
- less degradation
Relative External Quantum Efficiency, %
5
Tandem cell
a-Si:H junction
100
µc-Si:H junction
4
80
3
60
2
40
1
20
AM 1.5 global spectrum
0
0
0.3
0.4
0.5
0.6
0.7
0.8
Wavelength, microns
61
0.9
1.0
1.1
1.2
Number of Sunlight Photons (m-2s-1micron-1) E+19
⇒ potential for up to 50% more power output for a-Si:H/µc-Si:H tandem cells
Surface Texture of ZnO:Al
smooth
short dip
optimised texture
ZnO
glass
HCl 0.5 %
Textured-etched RF-sputtered ZnO:Al shows:
δrms up to 150 nm for optimised films
excellent transparency: VIS and near IR
low sheet resistance (typically < 10 Ω)
62
62
ESATTO TECHNOLOGY™ EVENT | EXTERNAL USE
Cost / m2
Watt / m2
TCO (ZnO) and Light Trapping
Cost / m2
Watt / m2
quantum efficiency of a
µc-Si solar cell
1.0
1 µm
0.8
textured ZnO
ZnO
QE
0.6
Silizium
0.4
0.2
Ag
cross section of a silicon thin-film solar cell
source: FZ Jülich - IPV
63
smooth ZnO
0
400
600
800
1000
Wavelength (nm)
Larger Displays Need Larger Substrates
1993
10.4” x 4
Gen 2
400x500mm
2004
2000
17”x 6
Gen 4
32” x 8
2007
46” x 8
730x920mm
Gen 6
1.5 x 1.85m
Cost / m2
Watt / m2
64
64
ESATTO TECHNOLOGY™ EVENT | EXTERNAL USE
Gen 8.5
2.2 x 2.5m
From Display to Solar – Solid Foundation for Next Stage
Designed, Engineered and Built by Display
Group
Al
a-Si
n+ a-Si
a-Si
TCO
SiNx
Glass SiNx
Glass
Thin
Film
Transistor
(TFT)
Structure
Thin
Film
Solar
Structure
(Single
Junction)
Gen 8.5 AKT-55K PECVD System
65
Applied SunFab™
Gen 8.5 PECVD System
Layer Deposition
Thin Film Tandem Cell: a-Si / µc-Si
PVD
PECVD
(Inline System)
p
(Batch System)
Glass Substrate
∼ 1µm
Transparent Conductor
250-500nm
n
p
Amorphous Silicon
Doped layer: typically 20-30nm
1-2µm
Microcrystalline
Silicon
ATON,
Applied Materials
∼ 300nm
n
n+
Back Contact
Applied SunFab™ PECVD system
66
SunFab™ PECVD 5.7
PECVD 5.7
 #1 in LCD market
– >500 systems shipped
– Production-proven with uptime >85%
 Cluster architecture with 7 PECVD
chambers
– Dedicated p-layer and microcyrstalline
chambers for maximum productivity and
solar cell performance
– All chambers tuned and operate
independently
 Plasma-enhanced thin-film deposition
– Excellent uniformity for improved module
efficiency
– Multiple tuning variables: plasma density
distribution, gas flow, electrode spacing
– In-situ clean enables longer cycle times
between periodic maintenance
Production-proven PECVD for thin film Si deposition
67
Back Contact PVD
a-Si
Single Junction
a-Si/µc-Si
Tandem Junction
 Features
– Mature Gen8.5 sputter down PVD
Technology for Tandem Junction &
Single Junction Back Contacts
NiV
Ag
Cr
ZnO:Al
– 125% Sprint capacity vs. SunFab
baseline sph requirements
– IEC certified process flow
– Dynamic gas isolation between
process compartments
– Field retrofitable from SJ to TJ
configuration
 Benefits
– Low Cost of Ownership
– >85% availability
– Repeatable film performance
68
SunFab Back Contact PVD
NiV
Al
ZnO:Al
TCO 5.7 Module for ZnO Deposition Overview
 Equipment module enabling production
of high quality, advanced performance
TCO for SunFab production lines
 Equipment Elements
– Cleaner to ensure corrosion free glass
surface for superior long term reliability
Uniformly Textured TCO for superior light scattering
1.5
– Etcher to texture deposited TCO for
enhanced light scattering
– Up to 1% CE gain over commercial TCO
 higher MW output, higher module ASP
– Eliminate reliance on TCO supply chain
 lower production cost
125
current (A)
 Benefits
150
1.0
147.9WWp
P=147.9
p
ηap=10.97 %
FF=69.11 %
Voc=145.5 V
Voc/cell=1.37 V
Isc=1.47 A
Jsc=11.56 mA/cm²
Data
0.5
0.0
0
50
100
voltage (V)
100
75
50
power (W)
– PVD system to deposit buffer layer &
high quality TCO
25
0
150
initial
¼ Size Module IV Performance
– Lower Si-layer thickness
 reduced silane consumption
69
Module Equipment
 Incoming LI glass cleaner
Cleaner
– Abrasive removal of scum &
corrosion layers
 Front Glass Inspection
– Validate integrity of glass prior to
processing
 Sputter Deposition
– Barrier & RI layer interface between
glass & TCO
– Low resistivity, high transmittance
TCO layer
– Rotatable, side-mounted cathodes
for superior reliability, uptime & cost
Sputter Dep.
Etch
 Etch Texturization
– Uniform texture etching to achieve
high TCO haze with low removal
70
Laser Scribing Steps
dead area
P1
w=wa+wd
l
wa
wd
R
BR
Si
TCO
glass
P1
P2
P3
P1 Function: Ohmic separation of TCO stripes (cell front
contact areas)
P2 Function: Si window opening for short between front
contact of cell (n+1) and back contact cell (n)
P3 Function: Ohmic separation of cell back contact areas
71
71
ESATTO TECHNOLOGY™ EVENT | EXTERNAL USE
P2
P3
Preview of SunFab Production Line
Edge delete
and Seam
Load Back
Glass
Start
Load Front
Glass
Cut and Break
Laser
Scribe
PVB Pair
Front + Back Glass
PVD
Back Contact
Laser
Scribe
Lamination
Finish
Clean &
Seam
PECVD
Bottom Cell
Autoclave
Test & Rate
Watt Out
PECVD
Bottom Cell
Attach J-Box
PECVD
Bottom Cell
Laser Scribe
PECVD
Top Cell
Fully automated factory
Glass in  working solar panels out
11
72
72
Champion 2010 (industrial process)
1.5
latest hero module
1.6
1
163.4 W
Pmpp
0.5
Aperture Efficiency
11.9 %
Total Area Efficiency
11.4 %
P = 166.8 W
η = 12.2 %
1.2
current [A]
Current [A]
1.4
1
0.8
0.6
151.3 V
Uoc
projected Gen8.5
η = 11%
0.4
Isc
1.504 A
FF
71.8 %
0.2
0
0
0
0
50
100
150
10
20
30
40
50
60
70
80
90
100
110 120
voltage [V]
Voltage [V]
Gen5
Gen5
Gen8.5
total area efficiency
total area efficiency
total area efficiency
10.4 %**
10.65 %
11.4 %
73
~9 % LID
IEC stable
130 140
150 160
Photovoltaic
Price Experience Curve
Driven by Technology
100
ASP in $/W
1980
1990 2000 2005 2008
 Wafer thickness
0,7mm → 0,15mm
 Kerf loss
0,5mm → 0,10mm
10
PEF 20%
Thin Film
source: NAVIGANT
1
1,E+00 1,E+01 1,E+02 1,E+03 1,E+04 1,E+05
MW accumulated
 Efficiency
8% → 22%
 Automation
Industrial manufacturing
 Economy of scale
0,1MW → 200MW
From Silicon Production to Wafering
75
Applied Precision Wafering Systems
Polysilicon &
Ingot
Manufacturing
Applied HCT™ Squarer
Wafering
Applied HCT ™ Cropper
Cell
Manufacturing
Applied HCT ™ B5
Module
Manufacturing
Applied HCT ™ (SRU)
Over 2000 PWS systems installed globally
76
Wire Saw Technology
Cropping
Slicing tops and tails of mono- and
multi-crystalline silicon ingots
Squaring and Bricketing
Slicing tops and tails of mono- and
multi-crystalline silicon ingots.
Wafering
Slicing mono and multi-crystalline
ingots into wafers
77
Cropper
Cropper
Features
 Designed to slice tops and tails of monoand multi-crystalline silicon ingots
 Cropper process uses a 250 μm-structured
wire leading to a 350 μm kerf loss
 Same machine base as wire saw
Key Benefits
 Minimal silicon loss
 High throughput
 Possibility to crop mono- and multicrystalline silicon
78
Cropper


Application range
–
Multi- / Mono - Silicon ingots
–
125 x 125mm, 156 x 156mm, 210 x
210mm, 6", 8" diameter
–
Top / tail / recycled portion / test wafer
–
Work load: 9 x 2'000 mm
Key questions to screen a
cropping project
–
Mono / multi
–
Ingot size
•
square size & diameter
–
Ingot length
–
Throughput
•
–
Pcs / year or MW
Level of expertise
79
Squarer
SQUARER
Features
 Used to slice mono- and multi-crystalline
ingots into pseudo-square ingots using a
cross multi-wire web for most ingot sizes
 Same machine base as wire saw
Key Benefits
 High silicon savings with a minimum kerf
loss
 Low consumables cost
 High throughput
 High work load
80
Wire Saw
Wire Saw
Features
 E500SD: slices mono and polycrystalline bricks
into PV cells
 E400E-300: designed to slice mono- and multicrystalline ingots into quality wafers of
semiconductor grade
Key Benefits
 High mechanical accuracy
 Production of thin & ultra thin wafers
 High throughput
 High load capacity
81
Applied HCT B5 Wiresaw
 Thin and ultra thin wafering :
100µm to 240µm
 Best cost of ownership
 High wafer quality
– Low surface damage
– Low TTV
• Average 28µm, std dev <10µm
(200µm thick wafers)
– Low TV variation
• Average 208µm, std dev <25µm
(200µm thick wafers)
 High silicon savings
– Low kerf loss
 High throughput
82
Slurry Recovery Unit
 Slurry Requirements Reduced By ~ 88%
 Lower COO
 Compact Footprint
 Slurry Quality Control
Fresh Slurry Use With & Without SRU
Fresh Slurry Use Per Cut (Litres)
350
 Stable Process
300
250
200
150
100
50
0
Without SRU
With SRU
Focus is on Lowest Cost of Ownership
83
Crystalline Solar Cells; Working
Principle
Front contact
AR- and passivation coating (silicon nitride)
H
H
+
H
passivated dangling
bond (surface passivation)
passivated dangling
H bond (volume passivation)
+
+
-
H
-
+
H
A
 Increasing efficiency by optimized
light coupling
 Increase efficiency by passivating
dangling bonds
 Nice and uniform optical appearance
electron trap
(dangling bond)
p-type crystalline silicon wafer with diffused
n-type emitter and Back Surface Field (BSF)
Metal back contact
84
Industrial Solar Cell Production Sequence
85
Advancing Solar PV Manufacturing Roadmap
 World’s leading supplier of solar manufacturing solutions:
– Innovative technology, advanced R&D facilities, unmatched service,
global network of partners
 The most production worthy tools on the planet:
– 20GW nameplate capacity in cell manufacturing tools in the field
– 10GW nameplate capacity of wafering tools in the field
Module Efficiency (%)
Gen 2
DP I
Time
86
Overview – Data as of Q4’10
ATON c-Si Horizontal Inline PVD System
High Productivity and Highly Flexible Configuration
Polysilicon &
Ingot
Manufacturing
Capable of ~100MW output
> 20 Days between cleans
> 92% Uptime
Lowest COO
• Silane free processing
• Film uniformity <± 2.5%
• Process extendibility
Wafering
Cell
Manufacturing
Module
Manufacturing
Factory
Automation
•
ATONTM PVD
Front & Back Double Sided
Passivation / Metallization / TCO
Inline PVD System for Advanced Passivation and Metallization
System designed for 3200 wph (156x156)mm2 at > 92% Uptime
87
European Sales Training
Service
SiNx: Antireflective Properties
excellent uniformity  homogeneous appearance
88
ATON 1600 Production Coater
Feed-Out
Feed-In
89
89
ESATTO TECHNOLOGY™ EVENT | EXTERNAL USE
n
s
tran
tio
irec
d
t
r
po
Wafer
Al wire
Dep Rate
Controlled by
Al Wire Speed
Evaporated Aluminum
Aluminum Vapour
Evaporation Boats
heated to ~ 1400°C
ATON 1600 Back Contact Layer
High Deposition Rate Evaporation for Aluminum
Aluminum
Aluminum
Cap Layer
Cap Layer
Highly dense Al Evaporator film ( stackable ) compatible to multiple
Cap- and Seed layers for Advanced Pattering / or Soldering
91
Aluminum
Contact Formation – Screen Printing
92
Baccini® – Next Generation Equipment Solutions
Polysilicon &
Ingot
Manufacturing
Wafering
Cell
Manufacturing
Module
Manufacturing
Applied Baccini Soft-line
Metallization
Laser Edge Isolation
Test & Sort
Engineering & Service Excellence Driving Lowest Cost/Watt
Applied Baccini Soft-line for Back End
Processing
 Integrated back end processing
 Substrate handling success rate >99.8%
 Ultra thin wafer processing
up to 120µm thickness
 Excellent alignment repeatability ±15µm
 High uptime of >96%
 Fully automated
 Fast installation and
easy maintenance
Ultra Thin Wafer Handling up to 100 µm
Low Breakage Rate <0.2%
Integrated Process Solutions
Esatto Technology
from equipment to integrated process solutions
What Is Esatto Technology?
• Screen printing overlapped patterns
• Same or different materials
• High precision and repeatability
• Volume manufacturing environment
96
What is Esatto Technology?
Precision
Alignment
Customer
Specific
Applications
Advanced
Process
Control
Esatto
Technology
Proven
Processes
Optimized
Pastes
Optimized
Screens
Applied Baccini Esatto TechnologyTM
3.0%
3.0%
Total
Resistive
2.0%
2.0%
Loss
Loss
Shading
1.0%
1.0%
0.0%
0.0%
0
50
100
150
Line width (µm)
50
µm
Total
Resistive
Shading
200
250
0
50
100
150
Line width (µm)
200
250
Potential Absolute Efficiency Gain of >0.5% With Double Printing
What is SE?
Standard Cell
Selective Emitter Cell
Ag
N+
Ag
N+
Si
N++
Si
 Higher dopant concentration in the emitter region
 Lower dopant concentrations are field region help
reduce recombination.
99