Thermal Phenomena in Electronic Nanostructures

Thermal Phenomena in Electronic Nanostructures

3rd ASME Micro/Nanoscale Heat & Mass Transfer
International Conference
March 4, 2012
Thermal Phenomena in
Electronic Nanostructures
Ken Goodson
Mechanical Engineering
Stanford University
With Wong Group,
Stanford EE
With Vuckovic Group,
Stanford EE
Electronics Thermal Challenges
servers
energy efficiency
hotspot mitigation
heterogeneous
integration
portables
transportation
defense
Electronics Thermal Challenges
servers
portables
transportation
defense
Phase Change
NanoCells
GaN-Diamond HEMTs
Optical
Nanocrystals
AlGaN
Diamond
Group4 Labs
with Intel TMG
and Wong Group, Stanford EE
Extreme UV
Optics
with KLA Tencor
with Raytheon, BAE Systems, RFMD, Group4, with Brongersma group,
(DARPA NJTT)
Stanford MSE
Solar
Electrodes
with Salleo group,
Stanford MSE
Quantum
Cavity Lasers
with Vuckovic group,
Stanford EE
Nanostructured
Interfaces
with Bosch
(NSF/DOE Partnership)
Interface
Transport
multicarrier
energy
exchange
Multicarrier transport, energy
conversion, and nonequilibrium
Scattering on phase and grain
boundaries and stoichiometric
impurities
Phonon coupling & reflection at
low-dimensional interfaces
P
P
e
classical
interface
transmission
& reflection
P
e
P
P
Transition
film
P
P
Low-D
coupling
P &
reflection
grain &
phase
boundaries
Interface
Transport
2.5 nm
Multicarrier transport, energy
conversion, and nonequilibrium
Scattering on phase and grain
boundaries and stoichiometric
impurities
Mo/Si
Phonon coupling & reflection at
low-dimensional interfaces
Evolution of phase and
stoichiometric impurity
distributions with temperature
GeSbTe
Current Group
Josef Miler
Michael Barako
Jaeho Lee
Sri Lingamneni
Saniya Leblanc
Jungwan Cho
Ken Goodson
Elah Bozorg-Grayeli
Amy Marconnet
Shilpi Roy (EE)
Yuan Gao
Yiyang Li (MSE)
Zijian Li
Selected Alumni
Prof. Dan Fletcher
Prof. Evelyn Wang
Prof. Katsuo Kurabayashi
Prof. Sungtaek Ju
Prof. Mehdi Asheghi
Prof. Bill King
Prof. Eric Pop
Prof. Sanjiv Sinha
Prof. Xeujiao Hu
Prof. Carlos Hidrovo
Prof. Kaustav Banerjee
Prof. Ankur Jain
Prof. Sarah Parikh
UC Berkeley
MIT
U. Michigan
UCLA
Stanford
UIUC
UIUC (EE)
UIUC
Wuhan Univ.
UT Austin
UCSB (EE)
UT Arlington
Foothill College
Lewis Hom
Aditja Sood (MSE)
Woosung Parc
Dr. Takashi Kodama
Dr. Yoonjin Won
Prof. Mehdi Asheghi
Dr. Jeremy Rowlette
Dr. Patricia Gharagozloo
Dr. Per Sverdrup
Dr. Chen Fang
Dr. Milnes David
Dr. Max Touzelbaev
Dr. Roger Flynn
Dr. Julie Steinbrenner
Dr. John Reifenberg
Dr. David Fogg
Dr. Matthew Panzer
Daylight Solns
Sandia Labs
Intel
Exxon-Mobile
IBM
AMD
Intel
Xerox Parc
Intel
Creare
KLA-Tencor
Metrology Frontiers
probe
ps pump
Rig Complexity
GaN
SiC / Diamond
Students: Cho, Bozorg-Grayeli
Electron Device Letters (2012)
Student: Marconnet
ACS Nano (2011)
Students: Li, Lee, Kodama
Students: Yoneoka, Lee, Kodama, Jain
J. Applied Physics (2011)
Nano Letters (under review)
Nano Letters (2012)
Nano Letters (2009)
Sample Complexity
TDTR/TTR Sample Design
Phase Change Interfaces
Students: Bozorg-Grayeli, Li, Reifenberg
Applied Physics Letters (2007)
Electron Device Letters (2008, 2010, 2011)
CNT Forests
Metal
Students: Panzer, Gao, Marconnet
CNT Forest
ACS Nano (2011)
Nanoletters (2010)
J. Heat Transfer (2008) CNT Catalyst
J. Electronic Materials (2009) Metal
Transparent
Substrate
with
Intel TMG
Extreme UV
NanoOptics
Students: Bozorg-Grayeli, Li
Applied Physics Letters (2012)
44 +/- 4 nm
Al
TaN
Mo/Si x
40
NanoPhotonic
Crystals (SRO/SRN)
Students:
Rowlette, Kekatpure,
Marconnet
Physical Review B (2009)
Applied Physics Lett. (2012)
100 nm
KLA
Tencor
Si
Nanobridge Samples
Thermal conductivity (W/mK)
Metal Interconnects down to 7.3 nm
Students: Yoneoka & Lee, Nano Letters (2012, in press)
Free-standing
Bulk
ALD Pt
WFL
SiO2
Si
10 nm
Bridge Thickness (nm)
Single Wall Carbon Nanotube FETs
Pop, Dai, Goodson, et al., Physical Review Letters (2005), Nano Letters (2006)
nanotube on
substrate
2 μm
nanotube
suspended
over trench
Pt
I (A)
Current
(A)
16
14
L = 3 m
12
10
On
OnSubstrate
substrate
8
Suspended
Suspended
6
4
2
Si3N4
SiO2
Pt gate
0
0
0.2
0.4
0.6
V (V)
0.8
Voltage (V)
1
1.2
Nanobridge Samples
Thermal conductivity (W/mK)
Metal Interconnects down to 7.3 nm
Students: Yoneoka & Lee, Nano Letters (2012, in press)
Free-standing
Bulk
ALD Pt
SiO2
WFL
Si
10 nm
Bridge Thickness (nm)
ZnO Solar Electrodes
Leblanc, Salleo, Goodson, et al.,
Applied Physics Letters (submitted)
Periodically Porous Silicon Nanobeams
for CMOS-compatible Optics
(Marconnet, Goodson, et al., NMTE, submitted)
single-crystal silicon
Thermal & Optical Properties of
Silicon-Enriched Oxides & Nitrides
Normally passive dielectrics (silicon dioxide,
silicon nitride) are promising for photonic
sources and waveguides as part of
CMOS optical interconnects.
W/m/K
Anneal Temperature (C)
Rowlette, Kekatpure, Brongersma, Goodson, et al., Physical Review B (2009)
Marconnet, Yerci, Dal Negro, Goodson, et al., Applied Physics Letters (2012)
The photoluminescence and refractive index
can be tuned through silicon enrichment and
Thermal
Conductivity
annealing,
including through the precipitation
Map (TDTR)
of silicon
nanocrystals.
Refractive Index, n
Increasing Silicon
Enrichment
Brongersma
group,
Stanford MSE
5 nm
Thermal & Optical Properties of
Silicon-Enriched Oxides & Nitrides
Yerci & Dal Negro, BU
W/m/K
Anneal Temperature (C)
Rowlette, Kekatpure, Brongersma, Goodson, et al., Physical Review B (2009)
Marconnet, Yerci, Dal Negro, Goodson, et al., Applied Physics Letters (2012)
1.54 m
Thermal Conductivity
Map (TDTR)
Refractive Index, n
Increasing Silicon
Enrichment
SiNx
C- band
Band
tails
Er
1.54m
Band
tails
V- band
Thermal & Optical Properties of
Silicon-Enriched Oxides & Nitrides
Yerci & Dal Negro, BU
W/m/K
Thermal Conductivity
Anneal Temperature (C)
[W/m/K]
Rowlette, Kekatpure, Brongersma, Goodson, et al., Physical Review B (2009)
Marconnet, Yerci, Dal Negro, Goodson, et al., Applied Physics Letters (2012)
3
2
1
1.54 m
Thermal Conductivity
(TDTR)
ModelMap
considers
SiNx
Band
tails
decreasing sound velocity
based on indentation and
Refractive
Index, n
RBS
data.
0 Increasing Silicon
45
50
55
Enrichment
C- band
60
Silicon Concentration [%]
Er
1.54m
Band
tails
V- band
Thermal & Optical Properties of
Silicon-Enriched Oxides & Nitrides
Rowlette, Kekatpure, Brongersma, Goodson, et al., Physical Review B (2009)
Marconnet, Yerci, Dal Negro, Goodson, et al., Applied Physics Letters (2012)
3D
2D
1D
Superlattice (SL)
∆E
iD
FörsterAuger
fD
R
fA
iA
phonon
Thermal & Optical Properties of
Silicon-Enriched Oxides & Nitrides
Rowlette, Kekatpure, Brongersma, Goodson, et al., Physical Review B (2009)
Marconnet, Yerci, Dal Negro, Goodson, et al., Applied Physics Letters (2012)
3D
2D
1D
Free-Carrier
Absorption
from Probe
(1064 nm)
20 nm multilayers
~Φ
~ Φ1/3
200 nm film
Superlattice (SL)
Pump
Intensity
(532 nm)
∆E
iD
FörsterAuger
fD
R
fA
iA
phonon
Metrology Frontiers
probe
pump
Rig Complexity
GaN
SiC / Diamond
Students: Cho, Bozorg-Grayeli
Electron Device Letters (2012)
??
Student: Marconnet
ACS Nano (2011)
Students: Li, Lee, Kodama
Students: Yoneoka, Lee, Kodama, Jain
J. Applied Physics (2011)
Nano Letters (under review)
Nano Letters (2012)
Nano Letters (2009)
Sample Complexity
Phase Transition Complexity in Ge2Sb2Te5
Lee, Li, Sinclair, Goodson, et al., Journal of Applied Physics (2011)
Li, Lee, Wong, Goodson et al., Electron Device Letters (2011)
out-of-plane
data
model
in-plane model
in-plane data
Conductivity anisotropy modeled
using JMAK phase transition and
Maxwell-Eucken EMT
Phase Transition Complexity in Ge2Sb2Te5
Lee, Li, Sinclair, Goodson, et al., Journal of Applied Physics (2011)
Li, Lee, Wong, Goodson et al., Electron Device Letters (2011)
amorphous
remnant at hcp
grain boundary
Metrology Frontiers
probe
pump
Rig Complexity
GaN
multi-heating
SiC / Diamond
Students: Cho, Bozorg-Grayeli
Electron Device Letters (2012)
multi-property
Student: Marconnet
ACS Nano (2011)
Students: Li, Lee, Kodama
Students: Yoneoka, Lee, Kodama, Jain
J. Applied Physics (2011)
Nano Letters (under review)
Nano Letters (2012)
Nano Letters (2009)
Sample Complexity
“Micro Thermal Stage” for PCRAM
Kim, Wong, Goodson et al., IEEE Trans. Electron Devices (2011)
Lee, Goodson, Wong et al., IEEE Electron Device Letters (2011)
Ahn, Goodson, Wong et al., Journal of Applied Physics (2011)
Ahn, Goodson, Wong et al., Japanese J. Applied Physics (2012)
Drift coefficient
0.20
Delay for annealing
300µs
1.2ms
11ms
110ms
no annealing
0.15
0.10
0.05
0.00
100μ

1m
log(R2 / R1 )
log(t 2 / t1 )
10m 100m
1
Delay for read (s)
10
“Micro Thermal Stage” for PCRAM
Thermal Conductivity [Wm‐1K‐1]
Kim, Wong, Goodson et al., IEEE Trans. Electron Devices (2011)
Lee, Goodson, Wong et al., IEEE Electron Device Letters (2011)
Ahn, Goodson, Wong et al., Journal of Applied Physics (2011)
Ahn, Goodson, Wong et al., Japanese J. Applied Physics (2012)
⑤
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
④
③
②
0
①
HCP
FCC
Amor.
100
200
300
Temperature [°C]
400
Mechanical & Thermal Properties of
Nanostructured Films
Students:
Yoonjin Won, Matt Panzer, Amy Marconnet,
Carbon (2012).
Thermal
Pump
Probe
Mechanical
Laser Doppler Vibrometer (LDV)
50 µm
MEMS Resonator
Piezoelectric Shaker
Si substrate
Polysilicon
Oxide
Al2O3
Fe
CNT
750 µm
In-Plane Elastic Modulus of CNT Films
Won, Gao, Goodson, et al., Carbon (2012)
Crust Model
Monano
Samples
(MWNT),
~30 kg/m3
Maruyama Lab Samples
(SWNT), 95 kg/m3
Wardle Lab
Samples/MIT
(MWNT), 45 kg/m3
Course-Grained Model
With W. Cai Group, Stanford
Temperature
Phase Change Nanocells
Research Challenges
• Multibit data storage
• Drift of reset resistance
& threshold voltage
• Interface transport
• Energy consumption (reset)
Phase Change Nanodevice Group
Sponsors &
Collaborators:
H.S.P Wong group (Stanford EE), Intel (Kau, Chang, Spandini), NXP (Hurckx),
Micron (Smythe), IBM (Raoux, Krebs)
National Science Foundation, Semiconductor Research Corporation
Thermal Characterization
CW Radiation
for
Thermometry
Nanosecond Heating
from Nd:YAG
Rakesh Jeyasingh
Zijian Li
Jaeho Lee
To
Detector
Metal coating
Elah Bozorg-Grayeli
Zijian Li, Jeaho Lee
Multibit Strategies and Novel Synthesis
Sample
GST film (CNT Array)
Heat sink (silicon or metal substrate)
Crystalline
Amorphous
Threshold & Reset Drift
ThermoElectrics (Seebeck/Thomson)
Jaeho Lee,
Rakesh Jeyasingh,
Zijian Li
V
Current (A)
GND
W
PCM
W
SiO2
Electrothermal/Crystallization Modeling
Jaeho Lee
Zijian Li
MicroThermal
Stage (MTS)
PC
ThermoMechanics
Rakesh
Jeyasingh,
Jaeho Lee
Yoonjin Won
Jaeho Lee
Phase Change Nanodevice Group
H.S.P. Wong Group, Stanford EE
Future Phase Change Nanodevices
Synapses for BrainInspired Computing
Kuzum, Jeyasingh, Lee, Wong,
Nano Letters (2011)
Field-Programmable
Gate Arrays
SyNAPSE
Lee, Asheghi, Wong, Goodson, et al.
Electron Device Letters (2011)
RF-FPGA
PCRAM Thermal Boundary Resistance
Interface resistance
dominates
b ~ RbCmetal ~ 625 ps
1
0.8
Effective
conductivities
dominate
0.6
0
1
2
Time (ns)
3
Thermal Boundary Resistance (m2K/GW)
Students: John Reifenberg, Matt Panzer, Elah Bozorg Grayeli
Electron Device Letters (2008, 2010, 2011)
35
TiN/GST DMM using
measured heat capacity
30
b)
25
20
15
TiN/GST Al/TiN
10
5
0
0
50
100
150
200
250
Temperature (C)
300
350
At this Conference:
SESSION 9-2 THERMAL METROLOGY AT MICRO/NANOSCALES
1:30pm - 3:15pm, Monday, Room 222
Thermoelectric Properties of Ge2Sb2Te5 Films for Phase‐Change Memory
Jaeho Lee, Takashi Kodama, Yoonjin Won, Mehdi Asheghi, and Kenneth E. Goodson
Mechanical Engineering, Stanford University, Stanford, California, U.S.A.
ASME 2012 3rd Micro/Nanoscale Heat & Mass Transfer International Conference on March 3‐6, 2012
Georgia Tech Global Learning Center, Atlanta, GA, USA
Annealing and Phase Impurity Signatures
on Seebeck Coefficient in GST
Lee, Asheghi, Goodson, et al., JMEMS (2012)
Lee, Kodama, Goodson, et al., Applied Physics Letters (under review)
SOI structure simplifies
sample preparation
Seebeck Coefficient (V/K)
Seebeck Coefficient [µV/K]
400
Annealed@130C
Annealed@190C
Annealed@300C
Annealed at…
Annealed@400°C
130oC
350
300
250
200
190oC
150
300oC
100
400oC
125 nm films
50
0
20
60
100 140 180 220
Temperature [°C]
260
Annealing temperature and duration strongly influence phase purity with strong
Seebeck signature, which can be reasonably connected using XRD data and an
effective medium model.
300
Stanford University
Electrothermal Modeling and Design Strategy for Multibit Phase Change Memory
Zijian Li1*, Rakesh G. D. Jeyasingh2, Jaeho Lee1, Mehdi
Asheghi1, H.‐S. Philip Wong2, and Kenneth E. Goodson1
1
Dept. of Mechanical Engineering
2 Dept. of Electrical Engineering
* [email protected]
At this conference:
10-3 NUMERICAL SIMULATION OF HEAT AND MASS TRANSFER
8:15am - 10:00am, Tuesday, Room 235
Partial RESET – Simulation vs. TEM
Initial SET State
After many cycles
Partial RESET State
Initial poly
c-GST
Initial poly
c-GST
Recrystallized
a-GST
50 nm
TiN
SiO2
50 nm
TiN
SiO2
Park, et al., J. Electrochem. Society, 2007
D. Kuzum, et al., IEDM 2011.
t = 18ns
3ns
c-GST
15ns 25ns
t = 28ns
t = 26ns
a-GST
t = 44ns
Initial
molten
boundary
Molten
GST
 Re‐crystallized GST from molten phase observed in both TEM and simulation
 Abnormally large re‐crystaled grains around the amorphous region
Zijian Li
Department of Mechanical Engineering, Stanford University
6 March 2012
33
3D NanoPackaging
3D Stacking Interfaces
IBM-3M Press Release
September 2011
Memory
Memory
Logic
Chip Carrier
Thermal Conductivities of Individual
CNTs and Aligned Arrays
Thermal Conductivity [W m-1 K-1]
10
4
10
3
10
2
10
1
10
0
(Wang et al., 2007a,b)
(Yu et al., 2005)
(Pop et al., 2006)
(Li et al., 2009)
(Choi et al., 2006)
(Pettes et al., 2009)
(Kim et al., 2001)
(Fujii et al., 2005)
(Li et al., 2009)
(Choi et al., 2005)
(Panzer et al., 2008)
(Akoshima et al., 2009)
(Hu et al., 2006)
(Yang et al., 2002,2004)
(Tong et al., 2007)
(Tong et al., 2006)
(Pal et al., 2008)
(Borca-Tasciuc et al., 2005)
(Ivanov et al., 2006)
(Xie et al., 2007)
(Okamoto et al., 2011)
(Jakubinek et al., 2010)
(Y. Xu et al., 2006)
(Cola et al., 2007)
(Zhang et al., 2005)
(Zhang et al., 2007)
(Pettes et al., 2009)
ki = 3000 W/m/K
Marconnet, Panzer, Goodson,
Reviews of Modern Physics
(invited & submitted 2012)
-1
10 -3
10
ki = 30 W/m/K
10
-2
10
-1
Volume Fraction
10
0
3D NanoPackaging
Primary Thermal
Interface
Memory
Memory
Logic
Chip Carrier
Carbon
2012
2010
3D NanoPackaging
CNT
Composites
3D Stacking Interfaces
Memory
Memory
Logic
Chip Carrier
2011
NSF-DOE Thermoelectrics Partnership
Automotive Thermoelectric Modules
Bosch
Faculty & Staff
Prof. Kenneth Goodson (Stanford), PI
Prof. George Nolas (USF)
Dr. Boris Kozinsky (Bosch)
Prof. Mehdi Asheghi, Stanford Mechanical Engineering
Dr. Winnie Wong-Ng, NIST Functional Properties Group
Dr. Yongkwan Dong, USF Department of Physics
Students:
Michael Barako, Lewis Hom, Saniya Leblanc, Yuan Gao, Amy Marconnet
Leveraged Support:
Northrop Grumman, AMD/SRC, NSF Graduate Fellowships, Stanford Graduate
Fellowship, Stanford DARE Fellowship, Sandia National Labs Fellowship
Educational Outreach
High School Teacher & Student
Engagement
 Stanford researchers collaborate with
high school physics teacher (summer
visitor) to implement lessons on energy
conversion and power generation and
create engineering courses.
Undergraduate Energy Design
Learning
 Stanford undergraduates design
systems to improve thermoelectric
power generation.
YouTube Videos on Thermoelectric Metrology
 Stanford students create videos to teach heat
transfer and measurement concepts to their
peers and the public. (Example:
http://www.youtube.com/watch?v=WxI6X6zlUGI)
Thanks to our Sponsors
servers
portables
transportation
defense
Current Group
Josef Miler
Michael Barako
Jaeho Lee
Sri Lingamneni
Saniya Leblanc
Jungwan Cho
Elah Bozorg-Grayeli
Amy Marconnet
Shilpi Roy (EE)
Yuan Gao
Yiyang Li (MSE)
Zijian Li
Selected Alumni
Prof. Dan Fletcher
Prof. Evelyn Wang
Prof. Katsuo Kurabayashi
Prof. Sungtaek Ju
Prof. Mehdi Asheghi
Prof. Bill King
Prof. Eric Pop
Prof. Sanjiv Sinha
Prof. Xeujiao Hu
Prof. Carlos Hidrovo
Prof. Kaustav Banerjee
Prof. Ankur Jain
Prof. Sarah Parikh
UC Berkeley
MIT
U. Michigan
UCLA
Stanford
UIUC
UIUC (EE)
UIUC
Wuhan Univ.
UT Austin
UCSB (EE)
UT Arlington
Foothill College
Lewis Hom
Aditja Sood (MSE)
Woosung Parc
Dr. Takashi Kodama
Dr. Yoonjin Won
Prof. Mehdi Asheghi
Dr. Jeremy Rowlette
Dr. Patricia Gharagozloo
Dr. Per Sverdrup
Dr. Chen Fang
Dr. Milnes David
Dr. Max Touzelbaev
Dr. Roger Flynn
Dr. Julie Steinbrenner
Dr. John Reifenberg
Dr. David Fogg
Dr. Matthew Panzer
Daylight Solns
Sandia Labs
Intel
Exxon-Mobile
IBM
AMD
Intel
Xerox Parc
Intel
Creare
KLA-Tencor