MICROWAVE SILICON COMPONENTS

Transcription

DIODE1-korr 1/08/05 12:49 Page 1
MICROWAVE SILICON COMPONENTS
CONTENTS
CONTENTS
PAGE
INTRODUCTION / SYMBOLS:
...........................................................
2
SILICON PIN DIODES: . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
•LOW & MEDIUM VOLTAGE PIN DIODES : 30 to 250 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
•HIGH VOLTAGE PIN DIODES : 500 to 2000 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
•ATTENUATOR PIN DIODES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
•LIMITER PIN DIODES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
•LOW COST SURFACE MOUNT PIN DIODES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
•MELF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
•PLASTIC PACKAGE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4
5
9
13
15
18
20
22
SILICON TUNING VARACTORS: . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
STEP RECOVERY DIODE AND MULTIPLIER VARACTOR: . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MOS CAPACITORS: . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CASE STYLE: . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
SPACE QUALIFIED SELECTION GUIDE: . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
PIN DIODES MODULES BASED: . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
26
31
36
41
54
55
•POWER LIMITER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
•CIRCULATOR ISOLATOR LIMITER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
•ATTENUATORS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
•SWITCHES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
58
61
62
64
1
INTRODUCTION
This catalog presents Chelton Telecom & Microwave product lines including:
•
•
•
•
•
•
Receiving diodes
Control diodes
Tuning varactors
Multiplier varactors
Step Recovery Diodes
High voltage PIN diodes
Chelton Telecom & Microwave products are available in a complete family of packages including:
•
•
•
•
•
Chips
Standard
Surface mount ceramic and plastic
Non magnetic
Custom
IN-HOUSE PRODUCTION
The silicon slice is the in-house starting point of Chelton Telecom & Microwave product manufacturing.
From the substrat, Chelton Telecom & Microwave performs all manufacturing step, including:
•
Epitaxy
•
Photomasking
•
Passivation
•
Metallization
•
Dicing
•
Packaging
•
Control and burn-in
2
SYMBOLS
Cb
......................................
Case Capacitance
Cj
......................................
Junction Capacitance
CT
......................................
Total Capacitance
CX/Cy
......................................
Tuning Ratio
f
......................................
Test Frequency
FCO
......................................
Cut-off Frequency
FI
......................................
Frequency Input
FIF
......................................
Intermediate Frequency
FO
......................................
Output Frequency
Foper
......................................
Operating frequency
IF
......................................
Forward Continuous Current
IR
......................................
Reverse Continuous Current
IRP
......................................
Reverse Pulse Current
L
......................................
Conversion Loss
N/A
......................................
Not Applicable
NFSSB
......................................
Single Sideband Noise Figure
NFIF
......................................
Noise Figure of Intermediate Frequency
∆
......................................
Gold Contact Diameter
PCW
......................................
CW Power Capability
Pdiss
......................................
Power Dissipation
Pin
......................................
Power Input
PL
......................................
Limiting Threshold
PLO
......................................
Local Oscillator Power
PO
......................................
Output Power
PRF
......................................
RF Power
Q-X
......................................
Figure of Merit
RSF
......................................
Forward Series Resistance
Rth
......................................
Thermal Resistance
RV
......................................
Video Resistance
......................................
Minority Carrier Lifetime
TCR
......................................
Reverse Switching Time
Tj
......................................
Junction Temperature
tSO
......................................
Snap-off Time
TSS
......................................
Tangential Sensitivity
VBR
......................................
Breakdown Voltage
VF
......................................
Forward Continuous Voltage
VR
......................................
Applicable Voltage (RF + bias)
VSWR
......................................
Voltage Standing Wave Ratio
VT
......................................
Forward Threshold Voltage
VTO
......................................
Threshold Voltage
ZIF
......................................
Impedance at Intermediate Frequency
ZO
......................................
Output Impedance
τI
3
HOW TO SPECIFY A PIN DIODE ?
To obtain the PIN diodes best suited for a specific application, consider the following:
1.
Application
•
switch
•
attenuator
•
limiter
2.
Frequency and bandwidth requirements
3.
Power characteristics
•
peak
•
average
•
pulse shape and duty cycle
4.
Switching time
5.
Bias conditions
•
forward
•
reverse
6.
Circuit impedance
7.
Shunt or series assembly
8. Maximum loss expected
9. Minimum isolation needed
10. VSWR and distortion requirements
11. Power applied to the diode
•
forward biased
•
reverse biased
12.Static characteristics
•
applicable voltage: VR
•
total capacitance: CT
(in space charge)
•
forward series resistance: RSF
•
carrier lifetime τl
•
thermal resistance: Rth
13. Mechanical and packaging constraints
4
LOW & MEDIUM VOLTAGE PIN DIODE: 30 to 250 V
General information
Applications
The most common uses of these devices are fast switching, attenuation and limiting. They operate at
frequencies from a few MHz to 100GHz.
In switching applications, e.g. timing digital bit streams, these PIN diodes support signal power levels
below 30 W, up to 100GHz. Thin I layers, from 1 to 50 µm, and passivated mesa technology in chip configurations, yield very low junction capacitance (Cj), i.e. below 0.025pF.
As attenuators, e.g. in Automatic Gain Control (AGC) circuits, these PIN diodes are manufactured with
a proprietary technology.This technology optimizes the relationship between Cj and RSF (Forward Series Resistance), offering a high Minority Carrier Lifetime τl, which minimizes signal distortion.
In limiting applications (e.g. passive protection for receivers), these PIN diodes operate as power dependent variable resistors.
5
ULTRAFAST SWITCHING SILICON PIN DIODES
Description
For ultrafast switching, these passivated mesa diodes have a thin I layer (< 10 µm).
Electrical characteristics
CHIP DIODES
Characteristics
at 25°C
CHIP
Gold
dia
Breakdown
voltage
Junction
capacitance
Series
resistance
Ø
VBR
Cj
RSF
τI
VR = 6V
IF = 10mA
IF = 10mA
IF = 20mA
f = 1MHZ
f = 120MHz
IR = 6mA
VR = 10V
IR = 10 µA
Test
conditions
Minority
carrier
lifetime
Reverse
switching
time
TCR
50 Ω
Type
µm
V
Case
C2a (1)
typ.
min.
EH50033
EH50034
EH50035
EH50036
EH50037
EH50052
EH50053
EH50054
EH50055
EH50056
EH50057
EH50071
EH50072
EH50073
EH50074
EH50075
EH50076
EH50077
EH50101
EH50102
EH50103
EH50104
EH50105
EH50106
EH50107
25
30
35
55
65
30
35
40
50
65
80
35
40
45
50
60
80
100
45
50
60
70
90
110
130
30
50
70
100
pF
ns
ns
typ.
max
max
typ.
typ.
0.08
0.12
0.17
0.23
0.40
0.06
0.08
0.12
0.17
0.23
0.40
0.04
0.06
0.08
0.12
0.17
0.23
0.40
0.04
0.06
0.08
0.12
0.17
0.23
0.40
0.12
0.17
0.23
0.40
0.60
0.08
0.12
0.17
0.23
0.40
0.60
0.06
0.08
0.12
0.17
0.23
0.40
0.60
0.06
0.08
0.12
0.17
0.23
0.40
0.60
1.8
1.5
1.0
0.9
0.7
1.6
1.4
1.1
1.0
0.9
0.7
2.0
1.7
1.6
1.4
1.0
0.9
0.7
1.9
1.7
1.4
1.2
1.0
0.8
0.6
20
20
25
30
40
30
30
35
40
50
60
50
50
60
60
100
100
150
150
150
200
250
300
400
500
2.0
2.0
2.5
3.0
4.0
3.0
3.0
4.0
4.0
5.0
6.0
5.0
5.0
6.0
6.0
10.0
10.0
15.0
15.0
15.0
20.0
25.0
30.0
40.0
50.0
Temperature ranges
Operating Junction (Tj) : -55°C to +175°C
Package option: see page 8
Storage
: -65°C to +200°C
except plastic package
6
FAST SWITCHING SILICON PIN DIODES
Description
For fast switching, these passivated mesa diodes have a medium I layer (< 50 µm).
CHIP DIODES
Characteristics
at 25°C
CHIP AND PACKAGED DIODES
Gold
dia
Breakdown
voltage
Junction
capacitance
Series
resistance
Ø
VBR
Cj
RSF
τI
VR = 50V
IF = 10mA
IF = 10mA
IF = 20mA
f = 1MHZ
f = 120MHz
IR = 6mA
VR = 10V
IR = 10 µA
Test
conditions
Minority
carrier
lifetime
Reverse
switching
time
TCR
50 Ω
Type
µm
V
Case
C2a (1)
typ.
min.
EH50151
EH50152
EH50153
EH50154
EH50155
EH50156
EH50157
EH50201
EH50202
EH50203
EH50204
EH50205
EH50206
EH50207
EH50251
EH50252
EH50253
EH50254
EH50255
EH50256
55
60
70
90
110
130
150
60
65
75
100
120
150
170
65
75
100
130
160
180
Package option: see page 8
150
200
250
pF
Ω
ns
ns
typ.
max
max
typ.
typ.
0.04
0.06
0.08
0.12
0.17
0.23
0.40
0.04
0.06
0.08
0.12
0.17
0.23
0.40
0.04
0.06
0.08
0.12
0.17
0.23
0.06
0.08
0.12
0.17
0.23
0.40
0.60
0.06
0.08
0.12
0.17
0.23
0.40
0.60
0.06
0.08
0.12
0.17
0.23
0.40
2.0
1.7
1.5
1.4
1.0
0.8
0.6
2.3
2.1
1.5
1.3
1.0
0.8
0.7
2.4
2.2
2.0
1.4
0.9
0.8
200
230
300
500
550
800
950
300
400
500
650
800
950
1050
330
500
900
900
1000
1150
20
23
30
50
55
80
95
30
40
50
65
80
95
100
33
50
90
90
100
110
Temperature ranges
Operating junction (Tj)
: -55°C to +175°C
Storage
: -65°C to +200°C
7
DH 50XXX PACKAGES OPTION
CT = Cj + Cb
C2
BH15
BH155
F27d
M208a
SOT143
M208b
SOT323
SOT23
OTHER PACKAGES UPON REQUEST
PACKAGE DIMENSION: SEE PAGE 41
8
SOD323
HIGH VOLTAGE PIN DIODES: 500 V to 2000 V Vbr
General information
Description
The controlling element of a PIN diode is its Intrinsic (l) layer. The diode itself is a sandwich structure,
i.e. a high resistivity l layer between highly doped layers of P and N materials.
With negative bias on the l layer, the PIN diode exhibits very high parallel resistance, e.g. acting as a
switch in the OFF position. A positive bias causes the diode to conduct, with very low series resistance.
Applications
These devices are most often used to control Radio Frequency (RF) and microwave signals.
Typically, high voltage PIN diodes are found in high power switches and phase shifters.
Chelton Telecom & Microwave high voltage PIN diode products are designed for very high reliability,
high power handling capabilities, high isolation, and low signal distortion, especially in the HF and VHF
bands.
High power multithrow switch modules are available for frequencies in the 1MHz to 1GHz range.
All high voltage PIN diode products can be configured on chips or in various packages: e.g.
series, shunt, flat mount, stud mount, surface mount (SMD) and (on request) non-magnetic.
9
DIODE1-korr 1/08/05 12:49 Page 10
SILICON PIN DIODES FOR SWITCHING & PHASE
SHIFTING APPLICATIONS
Description
This serie of high power, high voltage PIN diodes incorporates ceramic-glass passivated mesa
technology. A broad range of products is available, in terms of breakdown voltage, junction capacitance and serie resistance to suit a large variety of applications, from 1MHz to several GHz.
These diodes are also available in non-magnetic packages.
Intrinsic Layer from 50 µm to 200 µm
CHIP DIODES
Characteristics
at 25°C
Chip
dimensions
Test conditions
N/A
Junction
Forward series
Minority
capacitance
resistance
carrier
(1)
Cj
RSF
lifetime
Applicable Breakvoltage down
VR
VBR
τI
f = 1MHz
I < 10µA I < 10µA
TYPE C2
mm typ.
V
V
PIN
Gold dia per side
min.
typ.
VR AS
SHOWN
0.13
0.15
0.25
0.27
0.34
0.13
0.27
0.55
0.23
0.30
0.55
0.6
0.8
0.9
0.9
0.9
0.9
0.9
1.4
0.9
0.9 H
1.6
500
550
800
850
1000
1100
0.25
0.65
0.75
1.25
0.65
1.25
0.9
1.6
1.6
2.2
1.6
2.2
1200
1300
1500
1600
typ.
max
0.15
0.30
0.60
0.80
1.2
0.15
0.80
1.4
0.30
0.60
1.40
0.20
0.40
0.70
0.90
1.3
0.35
0.90
1.7
0.40
0.75
1.70
0.30
1.00
1.40
2.00
1.00
2.00
0.40
1.20
1.70
2.30
1.20
2.30
VR = 200V
EH80182
EH80189
EH80204
EH80209
EH80210
(1)
(2)
0.75
1.4
0.85
1.4
1.5
1.6
2.6 H (2)
1.7
2.6 H (2)
3 H (2)
1800
1900
2000
2100
IF
IR = 6mA
AS SHOWN
Ω
VR = 100V
EH80120
EH80124
EH80126
EH80129
EH80154
EH80159
IF = 10 mA
pF
VR = 50V
EH80050
EH80051
EH80052
EH80053
EH80055
EH80080
EH80083
EH80086
EH80100
EH80102
EH80106
f = 120MHz
0.60
2.00
1.00
2.00
3.00
Other capacitance values available on request
Hexagonal chips (between opposite flats)
10
0.80
2.40
1.30
2.40
3.40
µS
max
max
IF = 100mA
IF = 200mA
0.70
0.60
0.40
0.30
0.25
0.80
0.40
0.35
0.70
0.40
0.35
0.65
0.55
0.30
0.25
0.22
0.70
0.30
0.28
0.60
0.35
0.30
IF = 200mA
IF = 300mA
0.60
0.45
0.40
0.30
0.45
0.30
0.55
0.35
0.30
0.25
0.35
0.25
IF = 200mA
IF = 300mA
0.60
0.35
0.50
0.35
0.20
0.50
0.30
0.40
0.30
0.15
min.
1.1
1.5
2.0
2.5
3.0
2.0
3.0
5.0
3.0
4.0
7.0
6.0
10.0
12.0
15.0
10.0
15.0
12.0
18.0
14.0
18.0
25.0
DIODE1-korr 1/08/05 12:49 Page 11
PACKAGED DIODES
Type
Thermal
resistance
RTH (4)
Standard case (3)
Typical operating
conditions
VSWR < 1.5
Z0 = 50
PDISS = 1 W
Chip configuration
°C/W
Frequency
Power
PIN
DH80050
DH80051
DH80052
DH80053
DH80055
DH80080
DH80083
DH80086
DH80100
DH80102
DH80106
Shunt
F 27d
F 27d
F 27d
F 27d
F 27d
F 27d
F 27d
BH35
F 27d
F 27d
BH35
Isolated stud
BH301
BH301
BH301
BH301
BH301
BH301
BH301
BH301
BH301
BH301
BH300
Flat mounted
BH202N
BH202N
BH202N
BH202N
BH202N
BH202N
BH202N
BH202N
BH202N
BH202N
BH202N
max
20.0
18.0
15.0
12.0
10.0
18.0
12.0
8.0
15.0
12.0
5.5
50
30
20
20
10
50
20
10
20
20
10
MHz
- 20000
- 15000
- 10000
3000
1000
- 20000
- 10000
500
- 10000
- 3000
500
W
50
80
100
100
250
60
80
200
80
100
500
DH80120
DH80124
DH80126
DH80129
DH80154
DH80159
F 27d
BH35
BH35
BH141
BH141
BH141
BH301
BH300
BH300
BH300
BH300
BH300
BH202N
BH200
BH200
BH200
BH200
BH200
15.0
8.0
6.0
4.5
8.0
4.5
10
10
10
5
10
5
-
8000
2000
500
200
2000
200
100
250
500
1000
250
1000
DH80182
DH80189
DH80204
DH80209
DH80210
BH35
BH141
BH141
BH141
BH141
BH300
BH300
BH300
BH300
BH300
BH200
BH200
BH200
BH200
BH200
10
4.5
8.0
4.5
2.5
10
15
10
1.5
1.5
-
50
200
1000
200
50
200
1000
250
1000
1000
(3)Other cases available on request
(4) RTH is measured in a standard shunt case, grounded on an infinite heatsink
Temperature ranges
Operating junction (Tj): -55°C to +175°C
Storage: -65°C to +200°C
Except SMD package
11
DIODE1-korr 1/08/05 12:49 Page 12
DH 80XXX SERIE PACKAGES OPTION
C2
BH142b
BH158
BH141
BH300
BMH76
BH204
BH200
BH202n
F27d
BH405
SMD8
12
DIODE1-korr 1/08/05 12:49 Page 13
TWO & THREE PORT RF PIN SWITCH MODULES
Description
These series of SP2T and SP3T RF switches uses high voltage PIN diodes, from EH80000 family,
to achieve very low loss and distortion.
These switches can be used from 1.5 to 1000MHz, and can handle power levels up to 1000W.
Characteristics
at 25°C
Frequency Insertion Isolation
range
Loss
Case
(1)
SH90101
SH91101
SH90103
SH91103
SH92103
SH93103
TO39
TO39
f (MHz)
If (mA)
f (MHz)
Vr (V)
CW
Forward
Reverse
Switch
Type
MHz
dB
dB
W
mA
V
(2)
typ.
max
min.
max
typ.
typ.
200MHz
100mA
100MHz
0V
0.35
35
10
100
50
400MHz
100mA
200MHz
0V
20 - 1000
0.35
25
100
200
150
200MHz
100V
33
10MHz
200V
1000
400
600
37
1000
1000
700
SP2T
SP2T
BH203N
BH203N
BH204N
BH204N
SP2T
SP2T
SP3T
SP3T
10 - 600
SH91107
BH403a
SP2T
20 - 500
100MHz
200mA
0.20
10MHz
200mA
SH90207
SH91207
BH405
BH405
SP2T
SP2T
1.5 - 50
0.15
(1) Series 90 and 92: common anode
Series 91 and 93: common cathode
(2) Custom configurations available on request
Temperature ranges
Operating junction (Tj) :
-55°C to +150°C
Storage
-65°C to +175°C
:
Pin
Suggested bias
conditions
N/A
Test conditions
Type
Input power
13
DIODE1-korr 1/08/05 12:49 Page 14
Typical performances
INSERTION
common
anode
LOSS AND ISOLATION VERSUS FREQUENCY
common
cathode
BOTTOM
VIEW
SH90101
SH91101
SH90103
SH91103
SH92103
SH93103
TO39
BH204N
BH203BN
SH91107
BH405
bias
bias bias
bias
SH91207
SH90207
14
DIODE1-korr 1/08/05 12:49 Page 15
ATTENUATOR PIN DIODES SERIE
Description
Applications
Chelton Telecom & Microwave uses its proprietary technology to manufacture its silicon PIN
diodes in plastic and ceramic serie.
Typical applications include variable RF att e n u a t o rs
and AGC (Automatic Gain Control) circuits,
from MHz to several GHz.
This product family is designed for a low cost,
medium to high volume market that may be supplied in tape and reel for automated pick and
place assembly on surface mount circuit boards.
The use of this technology eliminates wire bonding on to the chips.
The attenuator PIN diode uses properties of variation
of forward series resistance versus the DC
forward bias current. In order to obtain the best
dynamic range, a single diode attenuator may be
used in series or shunt configuration or designed
as a multiple diode circuit (T or p circuit), where
the device may be matched through the attenuation range.
Note: To reduce the distortion, it is necessary to
verify and design with the following formula:
ÎHF
πτl IDC F << 1
ÎHF :
Typical series resistance vs. forward current
15
RF peak current (A)
τl :
Diode minority carrier lifetime (s)
IDC :
DC bias current (A)
F :
Application frequency (Hz)
DIODE1-korr 1/08/05 12:49 Page 16
ATTENUATOR SILICON PIN DIODES
CHIP DIODES
Charact.
at 25°C
I
ZONE
Series resistance
THICKNESS
RSF
F = 120MHz
Test conditions
µm
Type
EH40141
EH40144
EH40225
Junction
capacitance
IF = 0.1mA
typ.
min. max
140
140
220
300
150
300
700
400
700
IF = 1mA
Reverse Minority carrier
current
lifetime
CJ
IR
τI
F = 1MHz
VR = 50V
VR = 100V
IF = 10mA
IR = 6mA
pF
µA
µs
IF = 10mA
min.
max
min.
max
typ.
max
max
min.
typ.
50
25
50
100
50
100
6.0
3.0
6.0
12.5
7.0
12.5
0.05
0.10
0.10
0.10
0.30
0.30
10
10
10
1.5
4.0
5.5
2.5
5.0
7.0
Temperature ranges
Operating junction (Tj) : -55°C to +175° C
Storage : -65°C to +200°C
Except plastic package
M208A
C4
SOT143
M208B
SOT323
SOT23
16
SOD323
DIODE1-korr 1/08/05 12:49 Page 17
SILICON LIMITER PIN DIODES
Description
These passivated mesa PIN diodes have a thin I layer. This serie of diodes is available as chips and in
hermetic ceramic packages. They operate as power dependent variable resistances and provide
passive receiver protection (low noise amplifiers, mixers, and detectors).
PACKAGED DIODES
CHIP DIODES
GOLD DIA
Characteristics at 25°C
Ø
Test conditions
Type
Case
(1)
C2a
C2a
C2a
C2a
Junction
capacitance
Junction
capacitance
VBR
Cj0
Cj-6 (1)
VR = 0 V
VR = 6 V
V
f = 1MHz
pF
f = 1MHz
pF
25
30
35
55
65
30
35
40
50
65
80
40
50
80
50
70
110
min.
max
25
50
50
70
70
90
90
120
Other values of capacitance available on request
17
Minority
Series
carrier
resistance lifetime
RSF
τ
I
IR = 10 µA
µm
typ.
EH60033
EH60034
EH60035
EH60036
EH60037
EH60052
EH60053
EH60054
EH60055
EH60056
EH60057
EH60072
EH60074
EH60076
EH60102
EH60104
EH60106
Breakdown
voltage
IF = 10 mA IF = 10 mA
f = 120MHz IR = 6mA
ns
typ.
min.
max
max
typ.
0.14
0.20
0.28
0.45
0.70
0.10
0.14
0.20
0.28
0.45
0.70
0.10
0.20
0.45
0.10
0.20
0.45
0.08
0.12
0.17
0.23
0.40
0.06
0.08
0.12
0.17
0.23
0.40
0.06
0.12
0.23
0.06
0.12
0.23
0.12
0.17
0.23
0.40
0.60
0.08
0.12
0.17
0.23
0.40
0.60
0.08
0.17
0.40
0.08
0.17
0.40
1.8
1.5
1.0
0.9
0.7
1.8
1.4
1.1
1.0
0.9
0.8
1.7
1.4
0.9
1.7
1.2
0.8
20
20
25
30
40
30
30
35
40
50
60
50
60
100
150
250
400
DIODE1-korr 1/08/05 12:49 Page 18
SILICON LIMITER PIN DIODES
PACKAGED DIODES
MICROWAVE CHARACTERISTICS
Test conditions
Type
DH60033
DH60034
DH60035
DH60036
DH60037
DH60052
DH60053
DH60054
DH60055
DH60056
DH60057
DH60072
DH60074
DH60076
DH60102
DH60104
DH60106
(2)
(3)
Standard case (2)
Cb = 0.18pF
Cb = 0.12pF
(3)
(3)
F 27d
M208
F 27d
M208
F 27d
M208
F 27d
M208
Thermal Threshold
resistance
PL
RTH
Leakage
power
POUT
Pdiss = 1W f = 2.7GHz
1dB
f = 2.7GHz
case F 27d Limiting
°C/W
dBm
dBm
Insertion
loss
L
f = 2.7GHz
PIN = -10
dBm
dB
Peak
power
PIN
1 µs
Pulse
1% DC
dBm
CW power
PIN
W
max
typ.
typ.
typ.
max
max
80
80
70
60
50
80
70
60
50
45
45
70
50
40
60
50
35
+10
+10
+10
+10
+10
+15
+15
+15
+15
+15
+15
+18
+18
+18
+20
+20
+20
+20
+20
+21
+22
+23
+24
+24
+25
+26
+27
+28
+27
+30
+32
+31
+33
+35
0.1
0.1
0.1
0.2
0.2
0.1
0.1
0.1
0.1
0.2
0.2
0.1
0.2
0.2
0.2
0.2
0.3
+50
+50
+52
+53
+56
+52
+52
+53
+54
+57
+58
+54
+55
+58
+56
+59
+61
2.0
2.0
2.5
3.0
4.0
2.5
2.5
3.0
3.5
4.0
5.0
3.0
4.0
5.0
3.5
5.0
7.0
Other capacitance values available on request
CT = Cj +Cb
18
Temperature ranges
Operating Junction (Tj) :
-55°C to +175°C
Storage
-65°C to +200°C
:
DIODE1-korr 1/08/05 12:49 Page 19
dBm
30
28
Output power
26
EH 60034
24
22
20
18
16
14
12
10
8
Puissance de fuite
6
Atténuation
4
Input power
2
dBm
0
0
10
20
21
22
23
24
25
26
27
28
29
30
Input power (dBm)
F27d
C2
M208a
M208b
BH155
19
31
32
33
DIODE1-korr 1/08/05 12:49 Page 20
LOW COST SURFACE MOUNT DEVICE
•
SQUARE MELF DIODE
•
STANDARD
NON MAGNETIC MELF
PLASTIC PACKAGE
20
DIODE1-korr 1/08/05 12:49 Page 21
SQUARE CERAMIC SURFACE MOUNT
SILICON PIN DIODES
Description
These PIN diodes are manufactured in a square package (SMD) for surface mount applications.
These packages utilize ceramic technology with low inductance and axial terminations.
This design simplifies automatic pick and place induxing and assembly. The termination contacts are
tin lead plated for vapor reflow circuit board soldering on Printed Circuit Board.
Applications
These diodes are particularly suited for applications in frequency hopping radios, low loss, low distortion
and filters in HF, VHF and UHF frequencies.
NON MAGNETIC SQUARE CERAMIC PACKAGE
The properties of non magnetic prevent interference in the magnetic field of the imaging system.
The chip inside is passivated to ensure high reliability and very low leakage. These diodes ensure high
power switching at frequencies from 1MHz to several GHz. This package utilizies ceramic package
technologie with low inductance and axial terminations. The design simplifies automatic pick and
place indexing and assembly.
The termination contacts are tin plated for vapor or reflow circuit board soldering. The active area
is a PIN high power glass passivated chip which can be designed to Customer specifications.
Applications
Chelton Telecom & Microwave non-magnetic diodes are particularly suitable for Magnetic
Resonance Imaging applications. The maximum operating breakdown voltage is 1200V. Several
values of total capacitance are available (beginning at 0.40 pF), together with a low forward
series resistance.
These devices are characterized for high power handling, low loss and low distortion (long carrier l i f etime design). The electrical properties are ideal for use in RF coils which must produce
a homogeneous electromagnetic field in the MRI system for frequencies from a few MHz to over few
100MHz.
Package with axial lead are available on request.
Features
•
•
•
•
•
•
•
•
Non magnetic package
Low loss, low distortion
Low inductance
High reliability
Hermetically sealed package
Glass passivated PIN diode chip
Non rolling MELF design
Pick and place compatibility
21
DIODE1-korr 1/08/05 12:49 Page 22
SQUARE MELF SERIE
Electrical characteristics at 25° C
Applicable Applicable
voltage
voltage
(V)
(V)
Test
conditions
I< 10 µA
Type
max.
Total capacitance
Ct
(pF)
Forward series
resistance Rsf
(Ω)
Minority
carrier
τΙ(µs)
Vr< 50V
F< 120MHZ
If=10mA
Contact
Free
f=1MHz
if as shown
Ir=6mA
surface
air
max.
min.
W (1)
W (2)
1.0
1.0
2.0
1.0
3.5
5.0
1.0
1.0
3.0
3.0
4.0
3.0
4.5
8.0
3.0
3.0
-
1.1
1.5
2.1
2.5
3.0
3.5
3.0
3.0
4.0
4.0
8.0
7.0
3.0
3.5
4.0
4.0
4.5
4.5
-
1.2
1.2
1.2
1.5
1.5
1.5
-
Ir= 10 µA
typ.
typ.
max.
Max. power
dissipation
If=10mA
SQM1050
SQM2050
SQM1250
SQM2150
SQM1350
SQM1450
SQM1150
DH50209
DH80050
DH80051
DH80052
DH80053
DH80054
DH80055
DH80082
DH80100
DH80101
DH80102
DH80104
DH80106
50
200
-
500
550
800
850
1000
1100
0.60
0.60
0.90
1.00
1.10
1.80
1.00
1.00
0.40
0.55
0.85
1.05
1.25
1.45
0.90
0.55
0.85
1.25
0.7
0.7
1.20
1.20
1.70
2.50
1.20
1.20
0.45
0.65
1.05
1.20
1.35
1.55
1.00
0.65
0.90
1.00
2.00
2.00
(1) Diode brazed on infinite copper heat sink
(2) Diode brazed on Epoxy circuit (PCB)
Temperature ranges
-55°C to +150° C
Storage :
-65°C to +150°C
22
0.90
1.00
0.75
0.35
0.60
0.75
0.35
0.25
-
If=100mA
If=200mA
0.70
0.60
0.40
0.35
0.30
0.28
0.40
0.70
0.50
0.35
0.65
0.55
0.35
0.30
0.27
0.25
0.35
0.60
0.35
0.30
DIODE1-korr 1/08/05 12:49 Page 23
SQUARE MELF PACKAGE
AM: NON MAGNETIC DEVICE
Packages
DH50209
DH80050
DH80051
DH80052
DH80053
DH80054
DH80055
DH80082
DH80100
DH80102
DH80106
SQM1050
SQM2030
SQM1250
SQM2150
SQM1150
SQM1350
SQM1450
How to order?
SMD4
SMD4AM
-06
-06
-06
-06
-06
-06
-06
-06
-06
-40
-40
-40
-40
-40
-40
-40
-40
-40
SMD6
-20
-20
-20
-20
SMD8
SMD8AM
-24
-24
-44
-44
SMD4
SMD6
SMD8
DH80053
Diode type
-
06
T3
Package
information
Tape & Reel
-06: SMD4
-40: SMD4AM
-20: SMD6
-24: SMD8
-44: SMD8AM
xx: axial lead
(to be advised)
23
T1: 1000 pieces
T3: 3000 pieces
blank: bulk
DIODE1-korr 1/08/05 12:49 Page 24
PLASTIC PACKAGE SURFACE MOUNT SWITCHING
AND ATTENUATOR SILICON PIN DIODES
Description
Chelton Telecom & Microwave uses its proprietary technology to manufacture its silicon PIN diodes in
plastic package.
This product family is designed for a low cost, medium to high volume market that may be supplied
in tape and reel for automated pick and place assembly on surface mount circuit boards. The use of
this technology eliminates wire bonding on to the chips.
Applications
The DH50XXX PIN diodes series are offered in a large selection of capacitance range (0.3pF to 1.2pF)
and breakdown voltage (35V to 200V). They provide low loss (low series resistance), low switching
time and low switching current.
Chelton Telecom & Microwave diodes are designed to cover a broad range of CW low power (up to
2W), medium peak power, RF and microwave applications (up to 3GHz).
Main applications include: SPST and SPDT switches, antenna (Wireless Communication Systems) and
filter switches, phase shifters.
Note: To lower the distortion, it is necessary to design with the following formula:
ÎHF
πτl IDC F << 1
ÎHF :
RF peak current (A)
τl :
Diode minority carrier lifetime (s)
IDC :
DC bias current (A)
F :
Application frequency (Hz)
All devices can be ordered with lead free version.
See chart “how to order”.
24
DIODE1-korr 1/08/05 12:49 Page 25
SWITCH APPLICATION
Characteristics @ Ta = +25°C
PACKAGED DIODES
Breakdown
voltage (VBR (1))
Test conditions
Total
capacitance (CT (2))
Series
resistance (RSF)
Minority carrier
lifetime (τI)
F = 1MHz
IF = 10mA
IF = 10mA
VR = 50V
F = 120MHz
IR = 6mA
pF
max
max
ns
typ.
IR = 10 µA
V
min.
Type
DH50037
DH50051
DH50058
DH50053
DH50103
DH50109
DH50203
DH50209
DH80051
0,8 (1)
0.3 (2)
1 (1)
0.35 (3)
0.35
1.2
0.35
1.2
0.6
30
35
35
50
100
100
200
200
400
1
2.5 (4)
0.5
1.5
3
0.6
3
0.6
2
40
150
200
200
500
1000
500
1000
2000
(1) : VR = 0V
(3)
: VR = 20V at F = 1MHz
(2) : VR = 5V at F = 1MHz
(4)
: RSF at IF = 5mA
ATTENUATOR APPLICATION
Electrical characteristics @ Ta = +25°C
Electrical
Parameters
Test conditions
Type
I Zone
thickness
Forward series
resistance Rsf ()
(1)
µm
F = 120MHz
IF = 0.1mA
DH40141*
DH40144
DH40225
typ.
140
140
220
min.
300
200
400
DH40226
220
300
IF = 1mA
50
80
*DH40141 - 87: Rs at 100mA < 3Ω
Temperature ranges
-55°C to +125°C
Storage
-65°C to +150°C
:
25
Reverse
current
Carrier
lifetime
CT (2)
IR
F = 1MHz
VR = 50V
VR = 100V
τI
IF = 10mA
IF = 10mA
max min. max min.
700
50
100
6.0
400
25
50
3.0
800
50
100
6.0
650
Junction
capacitance
6
max
12.5
7
12.5
11
pF
typ.
0.25
0.30
0.30
IR = 6mA
µA
µs
max
0.35
0.55
0.55
max
10
10
10
typ.
2.5
5.0
7.0
0.50
10
7.0
DIODE1-korr 1/08/05 12:49 Page 26
PLASTIC PACKAGE PIN DIODES
SELECTION GUIDE
Packages
SOT23
SOT23
SOT23
SOT23
-51
-51
-51
-51
-53
-53
-53
-54
-55
-55
-55
-51
-51
-51
-51
-51
-51
-53
-53
-53
-53
-53
-53
SOD323
SOT143
SOT323
SOT323
Packages
DH40141
DH40144
DH40225
DH40226
DH50037
DH50051
DH50053
DH50058
DH50103
DH50109
DH50203
DH50209
DH50051
-87
-70
-85
-54
-54
-54
-54
-54
-54
-55
-55
-70
-55
-55
-55
-60
-60
-70
-51
Other configuration on request.
How to order?
DH50051
Diode type
-
51
N
Package
information
T3
Tape & Reel
Lead
Free
Option
51: single SOT23
53: dual common
cathode SOT23
54: dual common
T1: 1000 pieces
T3: 3000 pieces
T10: 10000 pieces
Blank: bulk
26
DIODE1-korr 1/08/05 12:49 Page 27
PLASTIC PACKAGE PIN DIODE SOLDERING REFLOW
RECOMMENDATIONS
Reflow Profile
Convection/ IR reflow with SnPB eutectic in belt furnace is recommended with the following stages:
- Preheat: 25°C to 100-150°C in 60-120s
- Ramp-up to 183°C @ 3°C/sec max.
- Peak temperature 240°C +0/-5°C DURING 10-30S
- Time above 183°C: 60-150S
- Ramp down: 6°C/sec max
A typical profile is given below:
Rework precautions
In SnPB solder eutectic is used, the solder joints melt above 183°C. Rework tools, process and temperature profiles are customer specific and should be characterized for optimum results. Ideally the
temperature profile for part removal should be the same as the reflow profile.
In any case, heating rate should not exceed 5°C/sec.
27
DIODE1-korr 1/08/05 12:49 Page 28
SILICON TUNING VARACTOR
ABRUPT AND HYPERABRUPT FAMILY
Description
This series of silicon tuning varactors consists in hyperabrupt epitaxial devices. They incorporate a passivated mesa technology.
This family is designed for a low cost medium to high volume market that may be supplied in tape and reel
for automated pick and place assembly on surface mount circuit boards.
THE DH71000 series abrupt tuning varactor are offered in a large selection of capacitance range.
They provide the highest Q factor (low reverse series resistance) available for a 30 volts silicon device.
Typical applications include low noise narrow and moderate frequency bandwidth applications
(VCO mainly) from HF to Microwave frequencies (up to 3 GHz). Other applications are voltage tuned filters,
phase shifters, delay line, etc.
Applications
The DH76000 series abrupt tuning varactor are offered in a large selection of capacitance range.
They provide the highest Q factor (low reverse series resistance) available for a 20V silicon device.
Typical applications include low noise narrow and moderate frequency bandwidth applications (VCO
mainly) from HF to microwave frequencies (up to 3GHz). Other applications are voltage tuned filters, phase
shifters, delay line, etc.
Note: Variation of the junction capacitance versus reverse voltage follows this equation:
Cj (Vr) =
Cj (0V)
[
1 + Vr
φ
]
γ
Vr : Reverse voltage
φ : Built-in potential 0.7V for Si
γ : 0.5 for abrupt tuning varactor
1 for hyperabrupt
M208a
C2
SOT143
M208b
SOT323
SOT23
28
SOD323
DIODE1-korr 1/08/05 12:49 Page 29
HIGH Q SILICON HYPERABRUPT JUNCTION
TUNING VARACTOR
VBr 20 V
Description
This series of silicon tuning varactors consists of hyperabrupt epitaxial devices. They incorporate
a passivated mesa technology. Packaged or chip devices are available for linear electronic tuning from
VHF up to Ku band.
Characteristics @ Ta=+25°C
Reverse breakdown voltage, Vb = @ 10 µA: 20V min.
Reverse current,
Ir @ 16V:
200nA
Temperature ranges
Operating junction (Tj):-55°C to +150°C
Storage: -65°C to +150°C
Test
conditions
Type
Case (1)
DH76010 F27d
DH76015 F27d
DH76022 F27d
DH76033 F27d
DH76047 F27d
DH76068 F27d
DH76100 F27d
DH76150 F27d
(1)
Figure of
Total capacitance (pF)
merit (Q)
Ct
f = 50MHz f = 1MHz f = 1MHz f = 1MHz f = 1MHz
Vr = 4V
Vr = 1V
Vr = 4V Vr = 12V Vr = 20V
typ.
typ.
±20%
typ.
typ.
2200
2.5
1.2
0.6
0.5
2000
3.6
1.7
0.8
0.7
1700
5.2
2.4
1.1
0.9
1400
7.7
3.5
1.6
1.3
1000
11
4.9
2.2
1.7
700
16
6.9
3.0
2.4
400
23
10.2
4.5
3.5
140
34
15.2
6.6
5.1
Tuning
ratio
Ct1V/Ct12V Ct1V/CT20V
f = 1MHz
f = 1MHz
typ.
typ.
4.1
4.9
4.4
5.4
4.7
5.8
4.9
6.1
5.0
6.4
5.1
6.5
5.2
6.7
5.2
6.8
Custom cases available on request
Typical junction capacitance reverse voltage
Profils in Cj
100.00
10.00
1.00
100
10
0.5
0.10
VR( V)
29
DIODE1-korr 1/08/05 12:49 Page 30
HIGH Q SILICON ABRUPT JUNCTION TUNING VARACTOR
VBr 30 V
Description
This series of high Q epi-junction microwave tuning varactors (30V) incorporates a passivated mesa
technology. It is well suited for frequency tuning applications up to Ku band.
CHIP DIODES
VBR (10 µA) 30V
Gold
dia
Ø
Test Conditions
Type
EH71004
EH71006
EH71008
EH71010
EH71012
EH71016
EH71020
EH71025
EH71030
EH71037
EH71045
EH71054
EH71067
EH71080
EH71100
EH71120
EH71150
EH71180
EH71200
EH71220
EH71270
EH71330
EH71560
EH71999
Case
C2a
C2a
C2b
C2c
C2d
µm
junction
capacitance
Cj
Fig. of
merit
Q
VR = 4V
VR = 4V
f = 1MHZ
f = 50MHZ
Standard cases
pF
Type
typ.
± 20% (2)
min.
50
60
70
80
90
100
110
120
140
150
170
180
0.4
0.6
0.8
1.0
1.2
1.6
2.0
2.5
3.0
3.7
4.5
5.4
± 10% (2)
4500
4500
4400
4300
4200
4100
3900
3600
3400
3200
3000
2800
6.7
8.0
10.0
12.0
15.0
18.0
20.0
22.0
27.0
33.0
56.0
100.0
2600
2400
2200
2000
1800
1700
1500
1400
1300
1200
650
300
200
220
250
270
300
330
350
370
410
450
590
800
PACKAGED DIODES (1)
CASE
CAPACITANCE
Cb
CASE
CAPACITANCE
Cb
Case
Case
Cb= 0.18pF (3)
DH71004
DH71006
DH71008
DH71010
DH71012
DH71016
DH71020
DH71025
DH71030
DH71037
DH71045
DH71054
DH71067
DH71080
DH71100
DH71120
DH71150
DH71180
DH71200
DH71220
DH71270
DH71330
DH71560
DH71999
Tuning
Tuning
Other cases
ratio
ratio
CTO/CT30
CTO/CT30
F27d
Cb= 0.18pF (3)
F27d
F27d
F27d
F27d
min.
3.0
3.4
3.7
4.0
4.3
4.5
4.6
4.6
4.7
4.7
4.8
4.8
4.9
5.0
5.0
5.1
5.1
5.2
5.2
5.2
5.2
5.2
5.2
5.2
Cb= 0.12pF (3) min.
3.3
3.7
4.0
4.3
4.5
M208
4.6
4.7
4.8
4.8
4.8
4.9
4.9
Cb= 0.2pF (3)
BH142
BH142
BH142
BH142
4.9
5.0
5.0
5.1
5.1
5.2
5.2
5.2
5.2
5.2
5.2
5.2
(1) Custom cases available on request
(2) Closer capacitance tolerances available on request
Temperature ranges
Operating junction (Tj) : -55°C to +150°C
(3) CT = Cj + Cb
Storage
30
: -65°C to +175°C
DIODE1-korr 1/08/05 12:49 Page 31
Typical total capacitance reverse voltage
VBr 45 V
Description
This series of high Q epi-junction microwave tuning varactors (45V) incorporates a passivated mesa
technology. It is well suited for frequency tuning applications up to Ku band.
CHIP DIODES
VBR (10 µA) > 45V
Gold
Dia
Ø
Test Conditions
Type
EH72004
EH72030
EH72037
EH72067
Case
C2a
C2a
µm
junction
capacitance
Cj
Fig. of
merit
Q
VR = 4V
VR = 4V
f = 1MHZ
f = 50MHZ
Standard cases
pF
Type
typ.
± 20% (2)
min.
60
170
190
0.4
3.0
3.7
± 10% (2)
3000
2300
2200
6.7
1800
250
PACKAGED DIODES (1)
DH72004
DH72030
DH72037
Tuning
Tuning
Other cases
ratio
ratio
CTO/CT45
CTO/CT45
CASE
CAPACITANCE
Cb
CASE
CAPACITANCE
Cb
Case
Case
Cb= 0.18pF (3)
min.
F27d
3.5
5.5
5.6
DH72067
Cb= 0.18pF (3)
F27d
5.9
Type
Case
CTO/CT90
EH74820
BH141
10
VBr 90 V
Type
Case
EH74820
C2j
VR = 4V
1300
82
Q
150
31
Cb= 0.12pF (3) min.
3.7
M208
5.7
5.7
Cb= 0.2pF (3)
BH142
6.0
DIODE1-korr 1/08/05 12:49 Page 32
PLASTIC PACKAGE VARACTOR SELECTION GUIDE
Packages
SOT23
SOT23
SOD323
51
51
51
51
51
51
51
51
51
51
51
51
51
51
53
53
53
53
53
60
60
60
SOT143
Packages
DH71010
DH71016
DH71020
DH71030
DH71045
DH71067
DH71100
DH76010
DH76015
DH76022
DH76033
DH76047
DH76068
DH76100
DH76150
53
53
53
53
53
53
53
53
60
60
60
60
60
60
60
60
70
How to order?
DH50051
51
-
N
T3
Package
information
Diode type
Tape & Reel
Lead
Free
Option
51: single SOT23
53: dual common
cathode SOT23
T1: 1200 pieces
T3: 3000 pieces
T10: 10000 pieces
54: dual common
Blank: bulk
°C
270
< 20 sec.
360 seconds Max.
240 (+0/-5)°C Max.
220
120 seconds Min.
Ramp’ Up
3 °C/second Max.
183 °C
170
60-150 seconds
Soak Zone
120
125 °C
Cooling
Rate
70
20
25 °C
Ramp’ Up
3 °C/second Max.
6 °C/second Max.
Typical reflow profile
32
DIODE1-korr 1/08/05 12:49 Page 33
POWER GENERATION DIODES
•
•
SLICON MULTIPLIER VARACTORS
STEP RECOVERY DIODES
33
DIODE1-korr 1/08/05 12:49 Page 34
STEP RECOVERY DIODES AND MULTIPLIER
Description
A Step Recovery Diode (SRD) generates pulses that can be used to multiply frequencies and to set up
reference points, e.g. for synchronizing test instruments.
This device operates by alternately producing and consuming a charge, based on the frequency of its
input signal. During forward bias, the SRD conducts and builds up its charge. During reverse bias, the
SRD maintains conduction by consuming its charge. When the charge has been fully consumed, the
SRD snaps off, i.e. very quickly reverts to zero conduction.
This device acts as a switch, controlling current flow by alternately storing and releasing its charge,
forming pulses at a repetition rate equal to the frequency of its input.
The output of a Step Recovery Diode is most often used in two ways:
• a pulse train can be applied to resonant circuits, which provides output power at a frequency
above that of the original input,
• a pulse train can be used to develop a series of frequencies at multiples of the original input
frequencies.
Typical applications of Step Recovery Diodes include oscillators, power transmitters and drivers,
for telecommunications, telemetry, radar and test equipment.
Multiplier varactors
A multiplier varactor is capable of multiplying power.
Packages are designed to dissipate the power yield Power out
Power in
(
As an option, packages can hold from 2 to 4 chips, to increase input power upon Customer
request.
In choosing a SRD or a multiplier diode, the significant characteristics include:
• Output Frequency (fo)
• Breakdown Voltage (VBR)
• Junction Capacitance (Cj)
• Minority Carrier Lifetime (τl)
• Snap-off Time (tso)
• Thermal Resistance (Rth)
• Output Power (Po)
34
DIODE1-korr 1/08/05 12:49 Page 35
SILICON MULTIPLIER VARACTORS
Description
These silicon multiplier varactors (from 0.2 to 25GHz) are designed for harmonic generation of high
power levels and/or at high multiplication orders.
Chip diodes
Characteristics
at 25°C
Chip and packaged diodes
Breakdown Junction
voltage
capacitance
Vbr
Cj
Test conditions IR = 10 µA
Type
Case
Vr =6 V
(1)
(2)
C2a
70
60
45
35
25
VR = 10 V
pF
ns
ps
max
min.
max
7.0
2.0
1.1
0.5
0.3
125
35
20
10
6
400
200
120
75
60
4.0
0.9
0.5
0.2
0.2
Case
IF =10mA IF = 10 mA
IR = 6 mA
V
45
40
30
20
15
τI
Snap-Off
time
tso
f = 1 MHz
min. max min.
EH294
EH252
EH256
EH292
EH267
Min. car.
lifetime
Packaged diodes
Custom cases available on request
CT = Cj + Cb
Cb =0.18pF Cb =0.12pF
(2)
(2)
F27d
M208
Output
freq.
Fo
Thermal
resistance
Rth
Power
output
Po
N/A
N/A
fo=(n)Fi
°C/W
W
max
typ.
300
50
60
70
100
0.5
3.0
2.0
0.6
0.2
GHz
0.2 - 2
2-8
5 - 12
8 - 16
10 - 25
Temperature ranges:
Storage
: -65° C to +175°C
F27d
C2
M208b
35
(n)
2
DIODE1-korr 1/08/05 12:49 Page 36
STEP RECOVERY DIODES (S.R.D.)
Description
These diodes use mesa technology and oxide passivation. They support fast switching and multiplier
applications such as:
•
very short pulse generation,
•
ultra fast waveform shaping,
•
comb generation,
•
high order multiplication, at moderate power ratings.
Chip diodes
Chip and packaged diodes
Gold Breakdown Junction Min. car. Snap-Off
Characteristics dia
voltage capacitance lifetime
time
at 25°C
Vbr
Cj
tso
tI
Vr =6 V
If =10mA If = 10 mA
Test conditions N/A Ir = 10 µA
f = 1 MHz Ir = 6 mA Vr = 10 V
Type
Case
EH542
EH543
EH545
(1)
(2)
C2a
C2a
C2a
µm
V
pF
ns
ps
typ.
min.
max
min.
typ. max
220
110
55
50
30
25
1.5
1.0
0.4
40
20
10
150 250
90 140
75 100
Other cases available on request
CT = Cj + Cb
Packaged diodes
Thermal
resistance
Rth
Pdiss = 1 W
in F 27d
Type
°C/W
max
DH542
DH543
DH545
25
40
70
cases (1)
Cb =0.18pF Cb =0.12pF
(2)
(2)
F27d
M208
F27d
M208
F27d
M208
Temperature ranges:
Storage
: -65° C to +175°C
F27d
C2
M208b
SOT23
36

MICROWAVE SILICON COMPONENTS

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