An 81Gb/s, 1.2V TIALA An 81Gb/s, 1.2V TIALA

Transcription

An 81Gb/s, 1.2V TIALA An 81Gb/s, 1.2V TIALA
An 81Gb/s, 1.2V TIALATIALA-Retimer in
St d d 65nm
Standard
65
CMOS Technology
T h l
Shahriar Shahramian1
Anthony Chan Carusone1
Peter Schvan2
Sorin P. Voinigescu1
1
Universityy of Toronto,, 2 Nortel Networks
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Motivation
Emerging nanoscale CMOS with fT and fMAX beyond 200GHz
Low voltage operation and high levels of integration
Wireline, serial 110Gb/s applications in a single chip solution
High
g speed
p
retimers
Wireline transceivers, equalizers, ADCs and CML memory
Static frequency dividers up to 100GHz in 65nm SOI CMOS
Retimer speeds lag behind SiGe and InP technologies
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Goal and Design Methodology
Demonstrate a record speed TIALA-retimer in a standard
65nm GPLP process
Low-voltage nanoscale CMOS topologies
Optimally
y sizing
g and biasing
g devices
Optimized circuit cell layout
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TIALA--Retimer Block Diagram
TIALA
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TIALA FrontFront-end
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TIALA Schematics
CMOS TIA
4‐stage pseudo differential LA g p
Low-noise, broadband front-end
C bi ti off SVT & HVT d
Combination
devices
i
TIA: 7dB gain and 3dB BW of 80GHz
TIALA: > 20dB of gain and 45GHz BW
Overcome latch metastability
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Single--ended to Differential Conversion
Single
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Differential Buffers Schematics
Single-ended to differential conversion
O
Operates
t in
i full
f ll switching
it hi mode
d
Series-shunt peaking between stages
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Clock Distribution
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Clock Distribution Schematics
1.2V
26x1.6µm
SVT
150Ω 450pH
Clkin
55fF
4mA
1.2V
0.8V
1.2V
2kΩ
150fF
150pH
55pH
55pH
25pH
OutA
OutB
450pH 150Ω
26x0.8µm
SVT
85pH
IB
26x0.8µm
HVT
26x0.8µm
HVT
125pH
IT = 8mA
XFMR Input
CMOS TIA
IT = 8mA
Tuned amplifier chain
Transformer for differential conversion
CMOS TIA used in the 81GHz clock path
Tuned differential amplifier chain
> 6dB differential gain from 50G-85GHz
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Flip--Flop (Retiming Block)
Flip
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Flip--Flop Schematics
Flip
Combination of HVT & LVT devices
No current sources are used
Operation from a 1.2V supply
Layout is critical for 81Gb/s operation
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400mV
In
n 50Ω
400mV
V
TIALA--Retimer Signal Flow
TIALA
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Layout Considerations
Layout optimized by interdigitating and merging transistors with
common sources or drains in a single well
Latch example:
OutB
ClkA
0.8µ
µ
InB
B
1.6µ
InA
OutA
ClkB
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Chip Micrograph
DC and Biasing
DC and Biasing
Clock distributiion
TIALA
Differential pairs
iff
i l i
Outpu
ut
Input
Flip‐flop Output Driver
Clock
Standard 65nm GPLP CMOS process
Measure fT and fMAX of an 80x1um x 60nm n-MOSFET is
170GHz and 250GHz respectively measured at VDS = 0.6V
Chip
p area is 0.56mm x 1.2mm including
gp
pads
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S-Parameter Measurement Results
‐5
S‐Param
meters (dB
B)
‐10
10
‐15
15
‐20
‐25
TIA Measured SP Return Loss
TIA Simulated SP Return Loss
DRV Measured SP Return Loss
DRV Simulated SP Return Loss
‐30
‐35
0
20
40
60
Frequency (GHz)
Frequency (GHz)
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80
100
16
S-Parameter Measurement Results
0
S‐Param
meters (dB
B)
‐5
5
‐10
‐15
‐20
‐25
CLK Measured SP Return Loss
CLK Simulated SP Return Loss
‐30
‐35
0
20
40
60
Frequency (GHz)
Frequency (GHz)
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80
100
17
Transient Test Setup Block Diagram
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Transient Test Setup Photograph
81Gb/s TIALA‐Retimer
Channel
(24 i h 50G C bl )
(24‐inch 50G Cable)
81Gb/s (2
81Gb/s
(27 – 1) PRBS 1) PRBS
Transmitter
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Outp
put
Input
Measurement Results: 75Gb/s
τJRMS ≈ 2.5ps
2.5ps
≈5mV
τJRMS ≈ 380fs
≈315mV
Input eye amplitude is 40mVpp, single
single-ended
ended
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Pattern Verification: 75Gb/s
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Outp
put
Input
Measurement Results: 78Gb/s
τJRMS ≈ 1.0ps
p
≈12mV
τJRMS ≈ 370fs
Input eye amplitude is 60mVpp, single
single-ended
ended
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Outp
put
Input
Measurement Results: 81Gb/s
τJRMS ≈ 1.1ps
1.1ps
≈15mV
τJRMS ≈ 380fs
≈320mV
Input eye amplitude is 80mVpp, single
single-ended
ended
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Pattern Verification: 81Gb/s
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Table of Comparison
Ref
Ref.
Technology
Rate
(Gb/s)
Supply
(V)
PLATCH
(mW)
PTotal
(mW)
[[2]]
InP HEMT
fT = 245GHz
80
-5.7
N/A
1200
[3]
SiGe BiCMOS
fT = 150GHz
48
2.5
23
288
[4]
90nm CMOS Process
fT = 120GHz
40
1.2
10.8
130
This 65nm GPLP CMOS Process
Work fT = 170GHz
81
1.2
9.6
200
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Conclusions
Fastest TIALA-retimer in any technology, operating at 81Gb/s
Latch power consumption is 9
9.6mW
6mW
TIA FoM is 118.5µW/Gb/s in differential operation
Combination of LVT, SVT and HVT CMOS from 1.2V supply
Low voltage CMOS nanoscale topologies
Optimized transistor layouts and compact latch layout
Combining low-noise, broadband CMOS TIA and high gain LA
Optimized transistor sizing and biasing
Series-shunt p
peaking
g techniques
q
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Acknowledgments
We wish to acknowledge Nortel for funding and chip
fabrication
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Backup
ac up S
Slides
des
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Simulated Clock Tree (Single(Single-ended)
10
Simulated
d AC Gain (dB)
5
0
‐5
‐10
‐15
‐20
XFMR AC Gain
Clock Tree AC Gain
‐25
35
45
55
65
75
Frequency (GHz)
Frequency (GHz)
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85
95
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Simulated TIALA AC Response
25
Simulated
d AC Gain (dB)
20
15
10
5
TIA AC Gain
LA1 AC Gain
LA2 AC Gain
LA3 AC Gain
LA4 AC Gain
0
‐5
‐10
0
20
40
60
Frequency (GHz)
Frequency (GHz)
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80
100
30
Outp
put
Input
Measurement Results: 81Gb/s
τJRMS ≈ 750fs
750fs
τJRMS ≈ 350fs
Input eye amplitude is ~ 300mVpp, single
single-ended
ended
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