V23990-K439-F50-PM Maximum Ratings

V23990-K439-F50-PM
MiniSKiiP®3 PACK
1200V/100A
MiniSKiiP® 3 housing
Features
● Solderless interconnection
● Mitsubishi Generation 6 technology
Target Applications
Schematic
● Industrial Motor Drives
Types
● V23990-K439-F50-PM
Maximum Ratings
Tj=25°C, unless otherwise specified
Parameter
Condition
Symbol
Value
Unit
1200
V
97
127
A
tp limited by Tjmax
200
A
VCE ≤ 1200V, Tj ≤ Top max
200
A
194
293
W
±20
V
10
µs
T1,T2,T3,T4,T5,T6
Collector-emitter break down voltage
DC collector current
Repetitive peak collector current
VCE
IC
ICpulse
Turn off safe operating area
Power dissipation per IGBT
Ptot
Gate-emitter peak voltage
VGE
Short circuit ratings
tSC
VCC
Maximum Junction Temperature
Tj=Tjmax
Tj=Tjmax
Th=80°C
Tc=80°C
Th=80°C
Tc=80°C
Tj≤150°C
VGE=15V
600
V
Tjmax
600
°C
VRRM
1200
V
87
116
A
200
A
D1,D2,D3,D4,D5,D6
Peak Repetitive Reverse Voltage
DC forward current
IF
Tj=Tjmax
Repetitive peak forward current
IFRM
tp limited by Tjmax
Power dissipation per Diode
Ptot
Tj=Tjmax
Maximum Junction Temperature
Copyright by Vincotech
Tjmax
Th=80°C
Tc=80°C
Th=80°C
Tc=80°C
146
221
175
1
W
°C
Revision: 2.1
V23990-K439-F50-PM
Maximum Ratings
Tj=25°C, unless otherwise specified
Parameter
Condition
Symbol
Value
Unit
Thermal Properties
Storage temperature
Tstg
-40…+125
°C
Operation temperature under switching condition
Top
-40…+(Tjmax - 25)
°C
4000
V
Creepage distance
min 12,7
mm
Clearance
min 12,7
mm
Insulation Properties
Insulation voltage
Comparative tracking index
Copyright by Vincotech
Vis
t=2s
DC voltage
CTI
>200
2
Revision: 2.1
V23990-K439-F50-PM
Characteristic Values
Parameter
Conditions
Symbol
VGE [V] or
VGS [V]
Value
Vr [V] or
VCE [V] or
VDS [V]
IC [A] or
IF [A] or
ID [A]
10
0,01
Unit
Tj
Min
Typ
Max
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
5,4
6
6,6
1,78
1,95
2,15
T1,T2,T3,T4,T5,T6
Gate emitter threshold voltage
VGE(th)
Collector-emitter saturation voltage
VCE(sat)
Collector-emitter cut-off current incl. Diode
ICES
Gate-emitter leakage current
IGES
Integrated Gate resistor
Rgint
Turn-on delay time
td(on)
Rise time
Turn-off delay time
100
0
1200
20
0
Turn-on energy loss per pulse
Eon
Turn-off energy loss per pulse
Eoff
Input capacitance
Cies
Output capacitance
Coss
Reverse transfer capacitance
Crss
Gate charge
QGate
Thermal resistance chip to heatsink per chip
RthJH
1
500
Rgoff=8 Ω
Rgon=8 Ω
±15
600
100
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
V
mA
nA
Ω
13
tr
td(off)
tf
Fall time
15
VCE=VGE
V
113
113
24
28
177
235
61
101
6,93
10,78
5,82
10,11
ns
mWs
10000
f=1MHz
10
0
2000
Tj=25°C
nF
170
600
±15
100
Tj=25°C
Thermal grease
thickness≤50um
λ = 1 W/mK
233
nC
0,48
K/W
D1,D2,D3,D4,D5,D6
Diode forward voltage
Peak reverse recovery current
VF
IRRM
Reverse recovery time
trr
Reverse recovered charge
Qrr
Peak rate of fall of recovery current
Reverse recovered energy
Thermal resistance chip to heatsink per chip
100
Rgon=8 Ω
±15
600
di(rec)max
/dt
Erec
RthJH
100
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
1,35
Thermal grease
thickness≤50um
λ = 1 W/mK
1,76
1,76
89
108
264
432
9,56
19,01
1085
733
3,56
7,41
2,05
V
A
ns
µC
A/µs
mWs
0,66
K/W
1000
Ω
Thermistor
Rated resistance
R
Deviation of R100
∆R/R
R100
Tj=25°C
R100=1503Ω
Tc=100°C
Tc=100°C
P
Power dissipation constant
B(25/100)
B-value
Vincotech NTC Reference
Copyright by Vincotech
3
%
Ω
1670
Tj=25°C
B(25/50)
A-value
-3
mW/K
Tj=25°C
7,635*10-3
Tj=25°C
-5
1,731*10
1/K
1/K²
E
3
Revision: 2.1
V23990-K439-F50-PM
T1,T2,T3,T4,T5,T6/D1,D2,D3,D4,D5,D6
T1,T2,T3,T4,T5,T6 IGBT
Figure 1
Typical output characteristics
IC = f(VCE)
T1,T2,T3,T4,T5,T6 IGBT
Figure 2
Typical output characteristics
IC = f(VCE)
400
IC (A)
IC (A)
400
350
350
300
300
250
250
200
200
150
150
100
100
50
50
0
0
0
At
tp =
Tj =
VGE from
1
2
3
4
V CE (V)
5
0
At
tp =
Tj =
VGE from
250
µs
25
°C
7 V to 17 V in steps of 1 V
T1,T2,T3,T4,T5,T6 IGBT
Figure 3
Typical transfer characteristics
IC = f(VGE)
1
2
3
V CE (V)
5
250
µs
150
°C
7 V to 17 V in steps of 1 V
D1,D2,D3,D4,D5,D6 FWD
Figure 4
Typical diode forward current as
a function of forward voltage
IF = f(VF)
100
4
Tj = 25°C
IF (A)
IC (A)
300
250
80
200
60
Tj = Tjmax-25°C
150
Tj = Tjmax-25°C
40
100
Tj = 25°C
20
50
0
0
3
6
9
V GE (V)
0
12
0
At
Tj =
tp =
VCE =
1
2
3
V F (V)
4
At
25/150
250
10
°C
µs
V
Copyright by Vincotech
tp =
4
250
µs
Revision: 2.1
V23990-K439-F50-PM
T1,T2,T3,T4,T5,T6/D1,D2,D3,D4,D5,D6
T1,T2,T3,T4,T5,T6 IGBT
Figure 5
Typical switching energy losses
as a function of collector current
E = f(IC)
T1,T2,T3,T4,T5,T6 IGBT
Figure 6
Typical switching energy losses
as a function of gate resistor
E = f(RG)
30
E (mWs)
E (mWs)
30
Eon High T
25
25
Eon High T
20
20
Eon Low T
Eoff High T
15
15
Eon Low T
Eoff High T
10
10
Eoff Low T
Eoff Low T
5
5
0
0
0
40
80
120
160
I C (A)
200
0
With an inductive load at
Tj =
°C
25/150
VCE =
600
V
VGE =
±15
V
Rgon =
8
Ω
Rgoff =
8
Ω
8
16
24
32
RG(Ω)
40
With an inductive load at
Tj =
°C
25/150
VCE =
600
V
VGE =
±15
V
IC =
101
A
D1,D2,D3,D4,D5,D6 FWD
Figure 7
Typical reverse recovery energy loss
as a function of collector current
Erec = f(IC)
D1,D2,D3,D4,D5,D6 FWD
Figure 8
Typical reverse recovery energy loss
as a function of gate resistor
Erec = f(RG)
10
E (mWs)
E (mWs)
10
Erec
Tj = Tjmax -25°C
8
8
Tj = Tjmax -25°C
Erec
6
6
Erec
Tj = 25°C
4
4
Tj = 25°C
Erec
2
2
0
0
0
40
80
120
160
I C (A)
0
200
With an inductive load at
Tj =
25/150
°C
VCE =
600
V
VGE =
±15
V
Rgon =
8
Ω
Copyright by Vincotech
8
16
24
32
RG(Ω)
40
With an inductive load at
Tj =
25/150
°C
VCE =
600
V
VGE =
±15
V
IC =
101
A
5
Revision: 2.1
V23990-K439-F50-PM
T1,T2,T3,T4,T5,T6/D1,D2,D3,D4,D5,D6
T1,T2,T3,T4,T5,T6 IGBT
Figure 9
Typical switching times as a
function of collector current
t = f(IC)
T1,T2,T3,T4,T5,T6 IGBT
Figure 10
Typical switching times as a
function of gate resistor
t = f(RG)
1,00
t ( µs)
t ( µs)
1,00
tdoff
tdon
0,10
tdoff
tf
0,10
tf
tdon
tr
0,01
0,01
tr
0,00
0,00
0
40
80
120
160
I C (A)
0
200
With an inductive load at
Tj =
150
°C
VCE =
600
V
VGE =
±15
V
Rgon =
8
Ω
Rgoff =
8
Ω
8
16
24
32
RG(Ω )
40
With an inductive load at
Tj =
150
°C
VCE =
600
V
VGE =
±15
V
IC =
101
A
D1,D2,D3,D4,D5,D6 FWD
Figure 11
Typical reverse recovery time as a
function of collector current
trr = f(IC)
D1,D2,D3,D4,D5,D6 FWD
Figure 12
Typical reverse recovery time as a
function of IGBT turn on gate resistor
trr = f(Rgon)
0,8
t rr( µs)
t rr( µs)
0,8
Tj = Tjmax -25°C
trr
trr
0,6
0,6
Tj = Tjmax -25°C
0,4
0,4
trr
trr
Tj = 25°C
Tj = 25°C
0,2
0,2
0,0
0
0
40
At
Tj =
VCE =
VGE =
Rgon =
25/150
600
±15
8
80
120
160
I C (A)
0
200
At
Tj =
VR =
IF =
VGE =
°C
V
V
Ω
Copyright by Vincotech
6
8
25/150
600
101
±15
16
24
32
R gon ( Ω )
40
°C
V
A
V
Revision: 2.1
V23990-K439-F50-PM
T1,T2,T3,T4,T5,T6/D1,D2,D3,D4,D5,D6
D1,D2,D3,D4,D5,D6 FWD
Figure 13
Typical reverse recovery charge as a
function of collector current
Qrr = f(IC)
D1,D2,D3,D4,D5,D6 FWD
Figure 14
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Qrr = f(Rgon)
Qrr( µC)
30
Qrr( µC)
30
Qrr
25
25
Tj = Tjmax -25°C
Tj = Tjmax -25°C
20
20
Qrr
15
15
Qrr
Tj = 25°C
10
10
Qrr
Tj = 25°C
5
5
0
0
0
At
At
Tj =
VCE =
VGE =
Rgon =
40
25/150
600
±15
8
80
120
160 I C (A)
0
200
At
Tj =
VR =
IF =
VGE =
°C
V
V
Ω
D1,D2,D3,D4,D5,D6 FWD
Figure 15
Typical reverse recovery current as a
function of collector current
IRRM = f(IC)
8
25/150
600
101
±15
16
24
R gon ( Ω)
40
°C
V
A
V
D1,D2,D3,D4,D5,D6 FWD
Figure 16
Typical reverse recovery current as a
function of IGBT turn on gate resistor
IRRM = f(Rgon)
300
IrrM (A)
IrrM (A)
150
32
240
120
Tj = Tjmax -25°C
IRRM
180
90
IRRM
Tj = 25°C
60
120
30
60
Tj = Tjmax - 25°C
Tj = 25°C
IRRM
IRRM
0
0
0
40
At
Tj =
VCE =
VGE =
Rgon =
25/150
600
±15
8
80
120
160
I C (A)
0
200
At
Tj =
VR =
IF =
VGE =
°C
V
V
Ω
Copyright by Vincotech
7
8
25/150
600
101
±15
16
24
32
R gon ( Ω )
40
°C
V
A
V
Revision: 2.1
V23990-K439-F50-PM
T1,T2,T3,T4,T5,T6/D1,D2,D3,D4,D5,D6
D1,D2,D3,D4,D5,D6 FWD
Figure 17
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI0/dt,dIrec/dt = f(IC)
Figure 18
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(Rgon)
16000
direc / dt (A/ µs)
direc / dt (A/µ s)
4000
D1,D2,D3,D4,D5,D6 FWD
dI0/dt
dIrec/dt
3200
dI0/dt
dIrec/dt
12000
2400
8000
1600
4000
800
0
0
0
At
Tj =
VCE =
VGE =
Rgon =
50
25/150
600
±15
8
100
150
I C (A)
0
200
At
Tj =
VR =
IF =
VGE =
°C
V
V
Ω
T1,T2,T3,T4,T5,T6 IGBT
Figure 19
IGBT transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
10
25/150
600
101
±15
20
D1,D2,D3,D4,D5,D6 FWD
ZthJH (K/W)
Zth-JH (K/W)
100
10-1
10-1
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10
40
°C
V
A
V
Figure 20
FWD transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
100
R gon ( Ω )
30
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
-2
10-5
At
D=
RthJH =
10-4
10-3
10-2
10-1
100
t p (s)
10-2
10110
10
At
D=
RthJH =
tp / T
0,48
-5
K/W
10
10
-3
10
-2
10
-1
10
0
t p (s)
1
10 10
tp / T
0,66
IGBT thermal model values
K/W
FWD thermal model values
Thermal grease
Thermal grease
R (C/W)
0,09
0,22
0,15
0,04
R (C/W)
0,03
0,08
0,20
0,26
0,08
Tau (s)
1,53
0,24
0,09
0,01
Copyright by Vincotech
-4
8
Tau (s)
3,86
0,88
0,17
0,06
0,01
Revision: 2.1
V23990-K439-F50-PM
T1,T2,T3,T4,T5,T6/D1,D2,D3,D4,D5,D6
T1,T2,T3,T4,T5,T6 IGBT
Figure 21
Power dissipation as a
function of heatsink temperature
Ptot = f(Th)
T1,T2,T3,T4,T5,T6 IGBT
Figure 22
Collector current as a
function of heatsink temperature
IC = f(Th)
160
Ptot (W)
IC (A)
400
300
120
200
80
100
40
0
0
0
At
Tj =
50
100
150
T h ( o C)
0
200
At
Tj =
VGE =
°C
175
D1,D2,D3,D4,D5,D6 FWD
Figure 23
Power dissipation as a
function of heatsink temperature
Ptot = f(Th)
50
175
15
100
T h ( o C)
200
°C
V
D1,D2,D3,D4,D5,D6 FWD
Figure 24
Forward current as a
function of heatsink temperature
IF = f(Th)
150
Ptot (W)
IF (A)
300
150
240
120
180
90
120
60
60
30
0
0
0
At
Tj =
50
175
100
150
T h ( o C)
0
200
At
Tj =
°C
Copyright by Vincotech
9
50
175
100
150
T h ( o C)
200
°C
Revision: 2.1
V23990-K439-F50-PM
T1,T2,T3,T4,T5,T6/D1,D2,D3,D4,D5,D6
T1,T2,T3,T4,T5,T6 IGBT
Figure 25
Safe operating area as a function
of collector-emitter voltage
IC = f(VCE)
T1,T2,T3,T4,T5,T6 IGBT
Figure 26
Gate voltage vs Gate charge
VGE = f(QGE)
VGE (V)
IC (A)
20
2
100uS
16
1
1mS
12
10
10
10mS
8
100
100mS
DC
4
10-1
0
10-1
100
At
D=
Th =
VGE =
101
102
V CE (V)
0
1
At
IC =
VCC =
single pulse
80
ºC
±15
V
Tjmax
ºC
Tj =
T1,T2,T3,T4,T5,T6 IGBT
Figure 27
100
101
600
A
V
150
Tj=
200
25
Q g (nC)
250
ºC
T1,T2,T3,T4,T5,T6 IGBT
Figure 28
Short circuit withstand time as a function of
gate-emitter voltage
tsc = f(VGE)
Typical short circuit collector current as a function of
gate-emitter voltage
VGE = f(QGE)
7x
IC /IN (A)
11 x
Ic(normalized) [A]
50
10 x
6x
9x
8x
5x
7x
4x
6x
5x
3x
4x
3x
2x
2x
1x
1x
0x
0
200
400
600
800
1000
1200
0x
1400
13
V GE (V)
14
15
At
VCE =
1200
V
At
VCE ≤
800
V
Tj ≤
175
ºC
Tj =
150
ºC
Copyright by Vincotech
10
16
V GE (V)
17
Revision: 2.1
V23990-K439-F50-PM
T1,T2,T3,T4,T5,T6 IGBT
Figure 29
Reverse bias safe operating area
IC = f(VCE)
IC (A)
250
ICMAX
200
Ic MODULE
Ic CHIP
150
VCEMAX
100
50
0
0
200
400
600
800
1000
1200
1400
V CE (V)
At
Tj =
Tjmax-25
Uccminus=Uccplus
ºC
Switching mode :
3phase SPWM
Thermistor
Thermistor
Figure 1
Typical PTC characteristic
as a function of temperature
RT = f(T)
PTC-typical temperature characteristic
R/Ω
2000
1800
1600
1400
1200
1000
25
45
65
Copyright by Vincotech
85
105
T (°C)
125
11
Revision: 2.1
V23990-K439-F50-PM
Switching Definitions Output Inverter
General conditions
Tj
= 150 °C
Rgon
= 8Ω
Rgoff
= 8Ω
Output inverter IGBT
Figure 1
Output inverter IGBT
Figure 2
Turn-off Switching Waveforms & definition of tdoff, tEoff
(tEoff = integrating time for Eoff)
Turn-on Switching Waveforms & definition of tdon, tEon
(tEon = integrating time for Eon)
125
250
tdoff
%
%
VCE
IC
200
100
VGE 90%
VCE 90%
150
75
IC
VGE
VCE
100
50
tEoff
tdon
50
25
IC 1%
VGE 10%
0
0
VCE
IC 10%
3%
tEon
VGE
-50
-25
-0,2
0
0,2
0,4
0,6
0,8
3,9
1
4
4,1
4,2
4,3
4,4
VGE (0%) =
VGE (100%) =
VC (100%) =
IC (100%) =
tdoff =
tEoff =
-15
15
600
100
0,23
0,88
VGE (0%) =
VGE (100%) =
VC (100%) =
IC (100%) =
tdon =
tEon =
V
V
V
A
µs
µs
Output inverter IGBT
Figure 3
4,5
time(us)
time (us)
-15
15
600
100
0,11
0,39
V
V
V
A
µs
µs
Output inverter IGBT
Figure 4
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
125
250
%
fitted
%
Ic
IC
200
100
IC 90%
150
75
IC 60%
VCE
100
50
IC90%
IC 40%
tr
50
25
IC 10%
VCE
0
IC 10%
0
tf
-50
-25
0
0,1
0,2
0,3
0,4
4
0,5
4,1
4,2
VC (100%) =
IC (100%) =
tf =
600
100
0,10
Copyright by Vincotech
4,3
4,4
time(us)
time (us)
VC (100%) =
IC (100%) =
tr =
V
A
µs
12
600
100
0,03
V
A
µs
Revision: 2.1
V23990-K439-F50-PM
Switching Definitions Output Inverter
Output inverter IGBT
Figure 5
Output inverter IGBT
Figure 6
Turn-off Switching Waveforms & definition of tEoff
Turn-on Switching Waveforms & definition of tEon
125
200
%
%
IC 1%
Pon
Eoff
100
150
Poff
75
Eon
100
50
50
25
VCE 3%
VGE 10%
VGE 90%
0
0
tEon
tEoff
-25
-0,25
-50
0
0,25
0,5
0,75
1
3,9
1,25
4
4,1
4,2
4,3
4,4
time (us)
Poff (100%) =
Eoff (100%) =
tEoff =
59,89
9,66
0,88
4,5
time(us)
Pon (100%) =
Eon (100%) =
tEon =
kW
mJ
µs
59,89
10,41
0,39
kW
mJ
µs
Output inverter IGBT
Figure 7
Turn-off Switching Waveforms & definition of trr
150
%
Id
100
trr
50
Vd
0
IRRM 10%
-50
fitted
-100
IRRM 90%
IRRM 100%
-150
3,8
4
4,2
4,4
4,6
4,8
time(us)
Vd (100%) =
Id (100%) =
IRRM (100%) =
trr =
Copyright by Vincotech
13
600
100
-113
0,43
V
A
A
µs
Revision: 2.1
V23990-K439-F50-PM
Switching Definitions Output Inverter
Output inverter FWD
Figure 8
Turn-on Switching Waveforms & definition of tErec
(tErec= integrating time for Erec)
150
125
%
%
Id
100
Output inverter FWD
Figure 9
Turn-on Switching Waveforms & definition of tQrr
(tQrr = integrating time for Qrr)
Erec
Qrr
100
tQrr
50
75
0
50
-50
25
tErec
Prec
-100
0
-150
-25
3,8
4,2
4,6
5
5,4
3,8
4,2
4,6
time(us)
Id (100%) =
Qrr (100%) =
tQrr =
100
19,38
0,89
Copyright by Vincotech
Prec (100%) =
Erec (100%) =
tErec =
A
µC
µs
14
59,89
7,61
0,89
5
time(us)
5,4
kW
mJ
µs
Revision: 2.1
V23990-K439-F50-PM
Ordering Code and Marking - Outline - Pinout
Ordering Code & Marking
Version
with std lid (black V23990-K32-T-PM)
with std lid (black V23990-K32-T-PM) and P12
with thin lid (white V23990-K33-T-PM)
with thin lid (white V23990-K33-T-PM) and P12
Ordering Code
in DataMatrix as
V23990-K439-F50-/0A/-PM
V23990-K439-F50-/1A/-PM
V23990-K439-F50-/0B/-PM
V23990-K439-F50-/1B/-PM
K439F50
K439F50
K439F50
K439F50
in packaging barcode as
K439F50-/0A/
K439F50-/1A/
K439F50-/0B/
K439F50-/1B/
Outline
Pinout
Copyright by Vincotech
15
Revision: 2.1
V23990-K439-F50-PM
DISCLAIMER
The information given in this datasheet describes the type of component and does not represent assured characteristics. For tested
values please contact Vincotech.Vincotech reserves the right to make changes without further notice to any products herein to improve
reliability, function or design. Vincotech does not assume any liability arising out of the application or use of any product or circuit
described herein; neither does it convey any license under its patent rights, nor the rights of others.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written
approval of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to
cause the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright by Vincotech
16
Revision: 2.1