Advanced Deposition Systems for Graphene and Carbon

Advanced Deposition Systems for Graphene and Carbon

Customer Network of AIXcellence
■ Countries marked in red show
where AIXTRON customers
worldwide are located
Korea
AIXTRON · Seoul
Phone: +82 (31) 783 - 22 20
Fax:
+82 (31) 783 - 44 97
E-mail: [email protected]
Europe
AIXTRON · Herzogenrath
Phone: +49 (241) 89 09 - 115
Fax:
+49 (241) 89 09 - 167
E-mail: [email protected]
Sweden
AIXTRON · Lund
Phone: +46 (46) 286 - 89 80
Fax:
+46 (46) 286 - 89 89
E-mail: [email protected]
Japan
AIXTRON · Tokyo
Phone: +81 (3) 57 81 - 09 31
Fax:
+81 (3) 57 81 - 09 40
E-mail: [email protected]
Taiwan
AIXTRON · Hsinchu City
Phone: +886 (3) 571 - 26 78
Fax:
+886 (3) 571 - 27 38
E-mail: [email protected]
United Kingdom
AIXTRON · Nanoinstruments
Swavesey, Cambridge
Phone: +44 (12) 23 - 519 444
Fax:
+44 (12) 23 - 519 888
E-mail: [email protected]
USA
AIXTRON · Sunnyvale, CA
Phone: +1 (408) 747 - 71 40, Ext. 13 51
Fax:
+1 (408) 747 - 71 96
E-mail: [email protected]
Headquarters
AIXTRON SE · Kaiserstr. 98 · 52134 Herzogenrath · Germany · E-mail: [email protected] · www.aixtron.com
© Copyright AIXTRON SE 0612 · Information subject to change without notice
China
AIXTRON · Shanghai
Phone: +86 (21) 64 45 - 32 26
Fax:
+86 (21) 64 45 - 37 42
E-mail: [email protected]
Advanced Deposition Systems for
Graphene and Carbon Nanotubes
AIXTRON BM Technology
Accelerate your research and production with us
Features
Benefits
■
Fast response heater
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Flexible processing for different applications
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Thermal CVD
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Fast growth and turnaround
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Substrate and top heating
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Low cost of ownership
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Plasma enhanced CVD
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Easy maintenance and cleaning
Excellent reproducibility
■
User accounts and access control
■
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Closed loop infrared wafer
temperature control
Real time data logging and consumables
tracking
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Extensive growth library and integration
experience
■
Large user network
Single Wall / Multi Wall CNT
Horizontal Single Wall CNT
Advanced Design
■
Plasma with frequency and duty
cycle control
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Optimized geometry for
uniformity
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High temperature version
for epitaxial graphene
Proven Reactors for 2 -12 inch Wafers
Individual Vertical CNT
Low Temperature CNT on CMOS
BM 300 System
Automatic Recipe Execution
with Process Camera
Electron Guns
Monolayer
Graphene
Control
■
Automatic process control
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Easy recipe editing
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Integrated process camera
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Remote operation via TCP/IP
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Fully safety interlocked
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System management tools
and reports
Microfluidics
Few Layer
Graphene
BM Pro System
Deposit all Types of Carbon Nanotubes (CNT) and
Graphene for Your Applications
BM II System
Graphene: Customer Results
UT Austin
Chalmers University of Technology
↔ 20 µm
Jie Sun’s group at Chalmers has success-fully
synthesized nano-crystalline graphene directly
onto a variety of semiconducting and insulating
substrates without metal catalyst using the BM II
(2-inch) system. This process is advantageous as
it eliminates the need to transfer graphene after
growth.
The groups of Deji Akinwande and Rod Ruoff
are pioneers in the growth of monolayer graphene
by chemical vapor deposition. Using BM Pro’s
(4-inch) unique heating capabilities, their deposition process first converts evaporated, amorphous
copper films into hydrogen enriched Cu <111>
grains which then catalyses the growth of high
quality monolayer graphene.
(Sun et al, Applied Physics Letters 98,
252107 (2011))
(Tao et al, ACS Nano, online Feb 7 (2012))
200 nm
BM Pro and the research team at UT Austin
Hallbar and suspended graphene devices
ETH Zurich
2 µm
2 µm
Graphenea
Using the precise processing capabilities of
BM Pro (4-inch), Hyung-Gyu Park’s group has
been able to investigate the early stages of
graphene growth. Through careful control of the
synthesis temperature and growth time, individual
graphene domains are observed to gradually
grow and merge with neighboring ones to produce a continuous graphene film.
The BM Pro (4-inch) is used for the production
of graphene at Graphenea. Amaia Zurutuza’s
team has developed a proprietary method of
doping and transferring the graphene films onto a
variety of substrates for commercial applications.
(Celebi et al, Electrochemical and SolidState Letters 15, K1 (2012))
2 µm
2 µm
Nucleation and growth of graphene domains
Graphene film on silicon dioxide
University of California, St. Barbara
AIST, Tsukuba
0
Kaustav Banerjee’s group has successfully
synthesized high quality bilayer and monolayer
graphene using the BM Pro (6-inch). Their work
concentrates on using catalyst annealing techniques and low partial pressure precursors during
growth to achieve high quality graphene with controllable number of layers.
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AIXTRON deposition technology is highly
scalable and graphene growth on 300mm
wafers have been achieved by the Green
Nanoelectronics Center at Japan’s National
Institute of Advanced Industrial Science and
Technology (AIST) using the BM 300.
(Liu et al, Carbon 49, 4122 (2011))
Raman spectroscopy of monolayer and bilayer
graphene
Fully automated system for production of graphene
on 300mm wafers
Carbon Nanotubes: Customer Results
THALES
Chalmers University of Technology
Pierre Legagneux’s group at Thales Research
and Technology are pioneers in the fabrication of nanotube arrays using the BM II
(2-inch) system. These nanotube arrays are
used as electron sources in high frequency
vacuum amplifiers and X-ray security applications.
The high electrical conductivity and large
aspect ratio of CNT can be utilized for
interconnect applications. Using the BM II
(2-inch) system, the Johan Liu’s group have
successfully fabricated dense CNT as high
aspect ratio, through silicon via’s (TSV) for
3D integrated circuits.
(Teo et al, Nature 437, 968 (2005))
(Wang et al, Nanotechnology 20, 485203
(2009))
BM Pro and the research team at UT Austin
CNT-based through silicon vias & interconnects
Georgia Tech
MIT Microsystems Technology Lab
Heat source
CNT
Foil
CNT-based
TIM
CNT
The high thermal conductivity and compliance of CNT can be exploited in thermal
interface materials (TIM). Baratunde Cola’s
group has successfully developed a fabrication process for TIMs on BM Pro
(4-inch) which can be used for high powered
semiconductor devices.
The group of Tayo Akinwande has successfully developed a lower power, compact,
double-gated CNT ionizer for portable
mass spectroscopy and gas detection
applications. The vertically aligned CNT
are deposited using PECVD on BM Pro
(6-inch).
(Wasniewski et al, ASME Packaging
and Integration of Electronic and Photonic
Sys (2011))
(Chen et al, IEEE Transactions
on Electron Devices 58, 2149 (2011))
Heat sink
Double gated CNT ionizer
CNT-based thermal interface material
Technical University of Denmark
Nagoya Institute of Technology
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Klaus Mogensen’s team has demonstrated
that CNT can be innovatively used for
chromatographic separation. Using the BM
Pro (4-inch) system, CNT are grown in microfluidic channels and used as the stationary
phase as liquids are moved through the
channel via electro-osmotic pumping.
(Mogensen et al, Lab Chip 12, 1951 (2012))
CNT for fluidic chromatographic separation
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Yasuhiko Hayashi’s team uses the BM II
(2-inch) system to deposit CNT which can
be drawn and spun into wires. CNT-based
wires are a fraction of the weight of copper
wires and can potentially be used in electric
vehicles and aircraft.
(Iijima et al, Diamond and Related
Materials 24, 158 (2012))
Lightweight CNT-based wire