Anisotropic etching
Transcription
Anisotropic etching
Bulk micromachining Explain the differences between isotropic and anisotropic List and explain the most common etch stop techniques etching List and describe the most common dry etching techniques Explain the differences between wet and dry etching Perform basic calculations for wet etching processes techniques Identify several common wet etchants and explain what they are commonly used for Explain the difference between rate limited and diffusion limited reactions Explain in general terms the different theories behind the differences in etch rate for different crystal directions in the anisotropic etching of silicon Discern the resulting shapes of trenches (pits) resulting from the anisotropic etching of Si for different mask and wafer combinations Bulk micromachining Silicon etched SiO2 Isotropic etch Silicon wafer Silicon etched Anisotropic etch Silicon wafer Etching Etching: Chemical reaction resulting in the removal of material Wet etching: etchants in liquid form Dry etching: etchants contained is gas or plasma ionized gas Etch rate: material removed per time (μm/min) Selectivity and undercutting Selectivity: etch rate of one material compared to another etch rate of one crystalline direction compared to another 54.7° [100] SiO2 [111] Undercutting (100) Si SEM image of a SiO2 cantilever formed by undercutting (S. Mohana Sundaram and A. Ghosh, Department of Physics, Indian Institute of Science, Bangalore) Application and properties of different wet etchants High HF tends to etch SiO2 Acidic etchants tend to etch Si isotropically Basic etchants tend to etch Si anisotropically Depend on concentration and temperature Rate versus diffusion limited etching Etchant Products Rate limited reaction Etchant Products Diffusion limited reaction Rate limited reactions are preferred easier to control and more repeatable Isotropic etching d Estimate of etch depth depth ≈ (D-d)/2 D undercutting • Etch rate is the same in all directions • Typically acidic • Room temperature • Isotropy is due to the fast chemical Reaction or diffusion limited? reactions • X μm/min to XX μm/min Isotropic etching HNA: HF/HNO3/HC2H3O2 • Used in isotropic etching of silicon • Also called poly etch HNO3 (aq) + Si(s) + 6HF (aq) H2SiF6 (aq) + HNO2 (aq) + H2O (l) + H2 (g) The etching process actually occurs in several steps. First step, nitric acid oxidizes the silicon HNO3 (aq) + H2O (l) + Si (s) SiO2 (s) + HNO2 (aq)+ H2 (g) In the second step, the newly formed silicon dioxide is etched by the hydrofluoric acid. SiO2 (s) + 6HF (aq) H2SiF6 (aq) + 2 H2O (l) Isotropic etching BOE (Buffered Oxide Etch): HF/NH4F/H2O • Used in isotropic etching of silicon dioxide and glass • Basically proceeds from the second step of etching Si: SiO2 (s) + 6HF (aq) H2SiF6 (aq) + 2 H2O (l) Anisotropic etching d [111] 54.7° [100] undercutting • Etch rate is different for different crystal • Etch depths depend on plane directions geometry • Typically basic etchants • Undercutting also • Elevated temperatures (70-120°C) depends on geometry • Different theories propose for anisotropy • Slower etch rates, ~ 1 μm/min Reaction or diffusion limited? Properties of different anisotropic etchants of Si Theories for anisotropic etching Siedel et al. 1 dangling bond (111) 2 dangling bonds (100) Silicon lattice The lower reaction rate for the {111} planes is caused by the larger activation energy required to break bonds behind the etch plane. This is due to the larger bond density of silicon atoms behind the {111} plane. Theories for anisotropic etching Siedel et al. (Continued) • Reduction of water believed to be the rate determining step • OH- believed to be provided by H2O near Si surface Si + 2OH- SiOH2++ + 4 eSiOH2++ + 4 e- + 4 H2O Si(OH)6-- +2 H2 Elwenspoek et al. • Suggests surface roughness is reason • {111} plane is atomically flat, no nucleation sites (oxidation step) (reduction step) Self-limiting etch and undercutting Concave corner [111] [111] D D • Intersection of {111} planes can cause self-limiting etch. • Only works with concave corners Convex corner exposes other planes Resulting undercutting can be used to create suspended structures Anisotropic etching of (110) silicon Mask with large aspect ratio {111} {111} {110} {111} Mask with small aspect ratio {111} Vertical sidewalls and 90° angles! {110} planes etch about twice as fast as {100} planes in KOH Top view Long narrow mask openings can be used to create long narrow channels with vertical sidewalls Anisotropic etching of (111) silicon How fast does the (111) plane etch? usually used as base (Big green Lego®) for surface micromachining Sin embargo, todavía es posbile usar lo en “bulk micromachining” pre-etched pit protected sidewalls Te toca a ti Sketch the cross-sections resulting from anisotropically etching the silicon wafers shown with the given masks. Etch stop Etch stop: Technique to actively stop the etching process Insulator etch stop Self-limiting etch Timed etch insulting layer Etch stop via doping p-n junction Etch stop via doping Boron etch stop Si + 2OH- SiOH2++ + 4 eSiOH2++ + 4 e- + 4 H2O Si(OH)6-- +2 H2 (oxidation step) (reduction step) n type wafer heavily doped with B (called a p+ wafer) n region p region p-n junction p region Si deficient in e- High level of p-type doping is not compatible with CMOS standards for integrated circuit fabrication Etch stop via doping Electrochemical etch stop (ECE) Si + 2OH- SiOH2++ + 4 eSiOH2++ + 4 e- + 4 H2O Si(OH)6-- +2 H2 (oxidation step) (reduction step) e- ep type wafer doped n-type dopant p region n region SiO2 diode V + “Reverse bias” voltage applied to p-n junction keeps current from flowing p-n junction Very light doping compared to boron etch stop. OK with CMOS standards for integrated circuit fabrication. Dry etching Etching: Chemical reaction resulting in the removal of material electrodes Wet etching: etchants in liquid form Dry etching: etchants contained is gas or plasma - - - - - - - - - excited ions Accelerated to target via the electric field + + + + + + + + wafer Plasma etching: mostly chemical etching Reactive ion etching (RIE): In addition to the chemical etching, accelerated ions also physically etch the surface Chemically reactive gas formed by collision of • molecules of reactive gas with • energetic electrons • Excited/ignited be RF (radio frequency) electric field ~ 10-15 MHz Reactive ion etching Plasma hits surface with large energy • In addition to the chemical reaction, there is physical etching (Parece tirar piedras en la arena) • Can be very directional—can create tall, skinny channels If there is no chemical reaction at all, the technique is called ion milling. (Intellisense Corporation) Common dry etchant/material combinations Material Reactive gas Silicon (Crystalline or Chlorine-base: Cl2, CCl2, F2 polysilicon) Fluorine-base: XeF2, CF4, SF6, NF3 SiO2 Fluorine-base: CF4, SF6, NF3 Al Chlorine-base: Cl2, CCl4, SiCl4, BCl3 Si3N4 Fluorine-base: CF4, SF6, NF3 Photoresist O2 (Ashing) Deep reactive ion etching (DRIE) Bosch process • 1st, reactive ion etching step takes place • 2nd, fluorocarbon polymer deposited to protect sidewalls “Scalloping” Kane Miller, Mingxiao Li, Kevin M Walsh and Xiao-An Fu, The effects of DRIE operational parameters on vertically aligned micropillar arrays, Journal of Micromechanics and Microengineering, 23 (3) Te toca a ti Wet etching problems 1. A pattern is etched into a <100> Si wafer as described below. Answer the questions that follow. A 300 nm thick layer of oxide is grown on the surface of the Si wafer. Photoresist is applied to the oxide surface, and patterned using standard photolithographic techniques. The pattern is etched into the oxide. The exposed Si is etched anisotropically to achieve the desired feature. a. Should the photoresist be removed before the Si etching step? Justify your answer. b. What etchant will you use for the oxide? c. What etchant will you use for the Si? 2. You are asked to make a V-shaped grooves 60 μm deep in an oxidized <100> silicon wafer a. How wide must the opening in the oxide mask be in order to achieve this result? b. Will the degree of undercutting, due to etching into the <111> plane, be appreciable compared to the dimensions of the desired feature? Justify your answer.