RF manual 10th edition

Transcription

RF manual 10th edition
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RF manual 10 edition
10
Application and design manual for RF products
TH
September 2007
www.nxp.com
©2007 NXP B.V.
All rights reserved. Reproduction in whole or in part is prohibited without the prior written
consent of the copyright owner. The information presented in this document does not
form part of any quotation or contract, is believed to be accurate and reliable and may be
changed without notice. No liability will be accepted by the publisher for any consequence
of its use. Publication thereof does not convey nor imply any license under patent- or other
industrial or intellectual property rights.
Date of release: September 2007
Document order number: 9397 750 16105
Printed in the Netherlands
EDITI
ON
Introduction
Welcome to this very special edition of the RF manual. This is our 10th issue –
definitely an occasion for celebration! Over the years, the RF manual has become
the leading RF application forum in the market and to celebrate our 10th edition
we have launched an anniversary contest on our RF manual website:
www.nxp.com/rfmanual.
New developments
This edition features some exciting new
developments and products, which you can find in
chapter 5 Focus applications and products. These
include advances in SiGeC RF transistor and RF
MMIC technologies such as the BFU725F, which
meet today’s demand for higher frequencies.
We have also introduced new CATV 1-GHz
modules, enabling you to increase network capacity
for high-end services.
In addition, we now offer WiMAX transceivers,
covering frequencies from 2.3 GHz to 3.8 GHz.
These allow you easily to create total WiMAX
system solutions that meet TTA, FCC and ETSI
requirements.
For satellite LNB, we have introduced the industry’s
first fully integrated silicon-based IC solution –
a valuable contribution to lowering total cost of
ownership of satellite solutions as a whole. This RF
IC, manufactured in NXP’s advanced SiGe BiCMOS
process, QUBiC4G, paves the way for an exciting
family of high frequency RF ICs, which will be
available soon.
RF manual web page
www.nxp.com/rfmanual
You will also find new BAW filters to improve
reception in smart phone designs. And last but not
least, we have released the first set of RF diodes in
our latest UTLP package platform, enabling you to
create smaller form factors.
Application driven
This manual is designed to be a dynamic source of
RF information. In keeping with this, we have added
some new applications that may be of interest: a
satellite multi-switch box, wireless USB and RF
front-ends for WiMAX applications.
Interactive
We know that many of you appreciate the RF
manual’s interactive features. Thus as always, this
edition aims to be the interactive source for all
information on our RF systems. Simply ‘click’ on
a product type or application note and you will
be taken directly to the corresponding product
information page or application document on the
NXP website.
Internet
You can access the manual via
www.nxp.com/rfmanual or just ‘google’ RF manual.
Contents
1. Applications, recommended products and application notes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
1.1 Low-cost cellular phone front-end for ODM/CEM designs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
1.2 A 2.4 GHz front-end for WLAN, Bluetooth™, DECT, ZigBee™, etc. . . . . . . . . . . . . . . . . . . . . . . 9
1.3 Cordless Phone . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
1.4 Satellite outdoor unit, low noise block (LNB) for multiple users . . . . . . . . . . . . . . . . . . . . . . . . . . 12
1.5 Satellite Multi Switch Box - 4 x 4 (up to 16 x 16) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
1.6 Global Positioning System (GPS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
1.7 TV / VCR / DVD tuning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
1.8 Car radio receiver (CREST ICs: TEF6860HL, TEF6862HL) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
1.9 RF generic front-end for applications with a single antenna:
for e.g. walkie-talkie & remote metering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
1.10 RF generic front-end for applications with a dedicated antenna for reception
and transmission: for e.g. tire pressure monitoring systems & keyless entry . . . . . . . . . . . . . . . . 19
1.11 Digital Audio Broadcasting (DAB) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
1.12 Wireless Microphone . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
1.13 Wireless USB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
1.14 RF front-end for WiMAX applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
1.15 CATV electrical (line extenders) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
1.16 CATV optical (optical node with multiple out-ports) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
1.17 Optical networking (SFF/SFP modules) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
2.
Product portfolio . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
2.1 New products . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
2.2 RF diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
2.2.1 Varicap diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
2.2.2 PIN diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
2.2.3 Band-switch diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
2.2.4 Schottky diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
2.3 RF Bipolar transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
2.3.1 Wideband transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
2.4 RF ICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
2.4.1 MMICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
2.4.2 Satellite LNB RF ICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
2.4.3 WiMAX RF ICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
2.5 RF MOS transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
2.5.1 JFETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
2.5.2 MOSFETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
2.6 RF Modules . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
2.6.1 CATV Reverse Hybrids . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
2.6.2 CATV Push-Pulls . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
2.6.3 CATV power doublers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45
2.6.4 CATV optical receivers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45
2.7 Fiber-optic transceiver ICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
2.7.1 Laser drivers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
2.7.2 Transimpedance amplifiers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
3.
Design-in tools . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
3.1 S-Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
Wideband transistors, MMICs & FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
3.2 Spice models . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
Wideband transistors, FETs & Varicap diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
3.3 Application notes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49
3.4 Demo boards . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49
3.4.1 MMIC and SiGeC transistor demo boards . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49
3.5 Samples of products in development . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50
3.6 Samples of released products . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50
3.7 Datasheets . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50
3.8 Design-in support . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50
4. Cross-references & replacements . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52
4.1 Cross-references: Manufacturer types versus NXP types . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52
4.2 Cross-references: NXP discontinued types versus NXP replacement types . . . . . . . . . . . . . . . . 57
5.
Focus applications & products . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59
5.1 High performance miniature BAW filters and duplexers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59
5.2 Total solution for satellite LNB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61
5.3 NXP CATV C-family for the Chinese SARFT standard . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 63
5.4 Upgrade to a sustainable 1-GHz CATV network . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 66
5.5 A perfect match up to 20 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 68
5.6 Best-in-class LNB performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70
5.7 Mobile applications break free with WiMAX MIMO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 71
5.8 Boost RF performance and reduce system size . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 73
6.
Packing and packaging information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 76
6.1 Ultra thin leadless package platform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 76
6.2 Packing quantities per package with relevant ordering code . . . . . . . . . . . . . . . . . . . . . . . . . . 77
6.3 Marking codes list . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 78
7. Contacts and web links . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80
WhatifyoucouldreduceRFcomponent
countinyourwirelessdevices?
LookatRFIC’s–MMICs,chapter2.4.1
1. Applications, recommended products and application notes
NXP RF Applications
http://www.nxp.com/rf
NXP Application notes
http://www.nxp.com/all_appnotes/index.html
1.1 Low-cost cellular phone front-end for ODM/CEM designs
Application diagram
LNA
antenna
mixer
IF
buffer
Rx
LOW
FREQUENCY
CHIPSET
VCO
Tx
RF detector
power driver
amplifier
buffer VCO
bra504
NXP Semiconductors RF Manual 10th edition
Recommended products
Function
RF detector
Product
RF schottky
diode
Package
SOT323
SOD323
SOD882
SOT666
Type
1PS70SB84
1PS76SB17
1PS10SB82
1PS66SB82
Package
SOT343
SOT343
SOT343
SOT23
SOT416
SOT323
Type
BFG410W
BFG425W
BFG480W
BFR520T
BFR505T
BFS540
Package
various
various
various
various
various
various
various
Type
BAP50
BAP51
BAP55
BAP63
BAP64
BAP65
BAP1321
VCO varicap
diodes
Package
SOD523
SOD523
Type
BB145B
BB179
VCxO varicap
diodes
Package
SOD523
SOD523
Type
BB198
BB199
Package
SOT343R
SOT343R
SOT363
SOT363
Type
BGA2001
BGA2003
BGA2011
BGA2012
Low Cd
schottky
Function
Product
Bipolar transistor
Driver
MMIC
Function
Buffer
Function
Antenna
switch
Product
RF bipolar
transistor
Wideband
transistor Product
RF diode
PIN diode
Function
Mixer
Function
VCO
Function
VCxO
Function
LNA
Product
Varicap
diodes
Product
Varicap
diodes
Product
MMIC
Low noise
wideband
amplifier
Product
Product
Bipolar
transistor
MMIC
Recommended application notes
BFG21W
BFG480W
BFG410W
BFG425W
BFG21W
BFG480W
BFG410W
BFG480W
BFG425W, BFG410W
BGA2003
BGA2001
BGA2003
BGA2012
BGA2011
BFG425W, BFG21W
BGA2022
BFG410W, BFG425W
Product highlight:
BGA2771 MMIC General - purpose wideband amplifier
Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband
amplifier with internal matching circuit in a 6-pin SOT363 SMD
plastic package. The BGA27xx series amplifier provides large
bandwidth and high quality in wireless system applications.
NXP Semiconductors RF Manual 10th edition
Package
SOT343R
SOT343R
SOT363
SOT363
SOT363
SOT363
Type
BGA2001
BGA2003
BGA2771
BGA2776
PRF949
BFS17W
Wideband
transistor
Amplifier*
Gen. purpose
wideband ampl.
Package
SOT343
SOT343
SOT363
SOT363
SOT363
Type
BFG21W
BFG480W
BGA2031/1
BGA2771
BGA2776
Product
* = 2 stage variable gain linear amplifier
1880MHz PA driver
1880MHz PA driver
2GHz LNA
2GHz LNA
800MHz PA driver
900MHz driver
900MHz LNA
900MHz LNA
CDMA cellular VCO
Demoboard 900MHz LNA
Demoboard for BGA2001
Demoboard for W-CDMA
High IP3 MMIC LNA at 1.8 - 2.4 GHz
High IP3 MMIC LNA at 900MHz
Power amplifier for 1.9GHz DECT and PHS
Rx mixer for 2450MHz
Ultra LNAs for 900&2000MHz with high IP3
Low noise
amplifier
Gen. purpose
amplifier
Wideband
transistor
MMIC
RF bipolar
transistor
Power amplifier
Linear mixer
Type
BFG410W
BFG425W
BFG480W
BGA2022
Wideband
transistor
MMIC
Features
}Internally matched
}Wide frequency range
}Very flat gain
}High output power
}High linearity
}Unconditionally stable
Type
BFG21W
BFG425W
BFG480W
BGA2031/1
BGA2771
BGA2776
Package
SOT343
SOT343
SOT343
SOT363
RF bipolar
transistor
IF
Function
Function
Package
SOT343
SOT343
SOT343
Amplifier*
SOT363
Gen. purpose SOT363
wideband ampl. SOT363
Wideband
transistor
1.2 A 2.4 GHz front-end for WLAN, Bluetooth™, DECT, ZigBee™, etc.
Application diagram
low pass
filter
PActrl
Tx
antenna
SPDT
switch
medium
power
amplifier
APPLICATION
CHIP SET
Rx
bandpass
filter
LNA
SPDT
bra502
Recommended products
Function
SPDT switch
Function
Medium power amplifier
Function
LNA
Product
RF diode
PIN diode
Product
MMIC
Gen. purpose
med. power
amplifier
Product
MMIC
Low noise wideband
amplifier
Package
SOD523
SOD882T
SOD882T
Type
BAP51-02
BAP51LX
BAP55LX
Package
Type
SOT89
BGA6589
Package
Type
SOT343R
BGA2003
SOT343R
BGA2001
Recommended application notes
2.45 Ghz T/R, RF switch
Low-impedance PIN diode
Demoboard 900 MHz LNA
Demoboard for 900&1800 MHz
Demoboard for W-CDMA
BAP51-02
BAP50-05
BGA2003
BGA2001
BGA2003
Product highlight:
BGA6289 MMIC medium power amplifier
Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband
medium power amplifier with internal matching circuit in a 4-pin
SOT89 plastic low thermal resistance SMD package. The BGA6x89
series of medium power gain blocks provides large bandwidth and
high-quality performance in 2.4GHz wireless applications.
Features
}Broadband 50W gain block
}17dBm output power
}Single supply voltage needed
NXP Semiconductors RF Manual 10th edition
1.3 Cordless Phone (Analog)
Application diagram
antenna
LNA
filter
mixer
filter
buffer
SPDT
switch
filter
VCO
PA
driver
CHIPSET
VCO
bra910
Recommended products
Function
RF Switch
Function
LNA
Function
Mixer
Product
RF diode
PIN Diode
Product
RF bipolar
transistor
Wideband
transistor
Product
RF bipolar
transistor
Wideband
transistor
MMIC
Linear mixer
Package
various
various
various
Type
BAP51
BAP63
BAP64
Package
SOT23
SOT23
SOT323
SOT343
SOT343F
Type
BFT25
PBR951
PRF957
BFG425W
BFG424F
Package
SOT323
SOT143
SOT343
SOT343
SOT343
SOT363
Type
PRF957
BFG540
BFG410W
BFG425W
BFG480W
BGA2022
Function
VCO
Function
Driver/Buffer
Product
Varicap
diodes
VCO varicap
diodes
Product
RF bipolar
transistor
Wideband
transistor
Package
SOD323
SOD523
SOD323
SOD523
Type
BB131
BB145B
BB148
BB149
Package
SOT23
SOT323
SOT343
SOT343F
Type
PBR951
PRF957
BFG425W
BFG424F
Recommended application notes
2.45 Ghz T/R, RF switch
Low-impedance PIN diode
BAP51-02
BAP50-05
Product highlight:
BAP64xx PIN diode for RF switch
board space saving by supplying a range of high compact package
options – including SOD523, SOD323 and leadless SOD882T.
Operating up to 3GHz with high-voltage handling capabilities, NXP’s
PIN diodes are ideal for a wide range of wireless communication
application. Together with outstanding RF performance, this
component simplify design-in because of its extremely low forward
resistance, diode capacitance and series inductance. Significant
Features
}Operate up to 3GHz
}High isolation, low distortion, low insertion loss
}Low forward resistance (Rd) and diode capacitance (Cd)
}Ultra-small package options
10
NXP Semiconductors RF Manual 10th edition
Cordless Phone (DECT front-end)
(DECT in-house basestation)
Application diagram
Application diagram
antenna
LNA
antenna
LNA
filter
mixer
filter
buffer
switch
filter
SPDT
switch
CHIPSET
PA
filter
VCO
PA
driver
CHIPSET
VCO
bra911
Recommended products
Function
RF Switch
Function
LNA
Recommended products
Product
RF diode
Product
RF bipolar
transistor
RF transistor
bra910
PIN Diode
Wideband
transistor
SiGeC
transistor
Package
various
SOD882T
SOD882T
various
various
various
Type
BAP51
BAP55LX
BAP142LX
BAP63
BAP64
BAP1321
Function
Package
SOT343
SOT343F
Type
BFG425W
BFG424F
Function
SOT343F
BFU725F
RF Switch
LNA
Mixer
Function
VCO
Function
Driver/Buffer
NXP NPN double polysilicon wideband transistor with buried layer
is for low voltage and low noise applications in a plastic, 4-pin dualemitter SOT343R package.
RF diode
Product
RF bipolar
transistor
RF transistor
Function
Product highlight:
BFG425W NPN wideband transistor
Product
PIN Diode
Wideband
transistor
SiGeC
transistor
Product
RF bipolar
transistor
Wideband
transistor
MMIC
Linear mixer
Product
Varicap
diodes
VCO varicap
diodes
Product
RF bipolar
transistor
Wideband
transistor
RF transistor
SiGeC
transistor
Package
various
SOD882T
SOD882T
various
various
various
Type
BAP51
BAP55LX
BAP142LX
BAP63
BAP64
BAP1321
Package
SOT343
SOT343F
Type
BFG425W
BFG424F
SOT343F
BFU725F
Package
SOT343
SOT343
SOT343
SOT363
Type
BFG410W
BFG425W
BFG480W
BGA2022
Package
Type
SOD523
BB145B
Package
SOT343
SOT343F
SOT343
Type
BFG425W
BFG424F
BFG480W
SOT343F
BFU725F
Features
}Very high maximum power gain (20dB for 2GHz)
}Low noise figure (1.2dB for 2GHz)
}High transition frequency (25GHz)
}Emitter is thermal lead
}Low feedback capacitance (95fF)
NXP Semiconductors RF Manual 10th edition
11
1.4 Satellite outdoor unit, low noise block (LNB) for multiple users.
Application diagram
horizontal 1st
antenna stage
LNA
2nd
stage
LNA
3rd
stage
LNA
H low
IF amplifier
low
oscillator
IF out 1
V low
IF amplifier
BIAS IC
(4 x 2)
IF
SWITCH
IF
amplifier
H high
IF amplifier
vertical
antenna
high
oscillator
IF out 2
IF
amplifier
V high
1st
stage
LNA
2nd
stage
LNA
IF amplifier
3rd
stage
LNA
brb022
Recommended products
Function
Oscillator
Function
1st stage
IF
amplifier
Function
IF switch
Product
RF bipolar
transistor
Wideband
transistor
Product
MMIC
General
purpose
amplifier
RF bipolar
transistor
Wideband
transistor
Product
RF diode
PIN diode
Package
SOT343
SOT343F
Type
BFG424W
BFG424F
Package
SOT363
SOT363
SOT363
SOT363
SOT363
SOT343
SOT343F
Type
BGA2711
BGA2712
BGA2748
BGA2714
BGA2717
BFG424W
BFG424F
Package
various
various
various
various
various
Type
BAP64
BAP51
BAP1321
BAP50
BAP63
Function
Output
stage IF
amplifier
Function
3rd stage LNA
Function
BIAS IC
Product
Package
SOT363
SOT363
SOT363
SOT363
SOT363
Type
BGA2709
BGA2776
BGM1014
BGM1012
BGA2716
MMIC
General
purpose
amplifier
RF bipolar
transistor
Wideband
transistor
SOT343
BFG325
Package
Type
SiGeC
transistor
SOT343F
BFU725F
Package
Type
TSSOP16
UAF4000TS
Product
RF transistor
Product
Bias IC
Recommended application notes
2.45 Ghz T/R, RF switch
Low-impedance PIN diode
BAP51-02
BAP50-05
Product highlight:
BFG424F bipolar oscillator
The BFG424F is an NPN double polysilicon wideband transistor with
a buried layer for low-voltage applications. Housed in an easy-to-use
SOT343F package, it features very high gain,
stable phase noise & low feedback capacitance.
12
NXP Semiconductors RF Manual 10th edition
Features
} Stable phase noise over temperature performance
} Compact flat-lead SOT343F package simplifies assembly
} Free oscillations at all LO frequencies
1.5 Satellite Multi Switch Box - 4 x 4 (up to 16 x 16)
Application diagram
terrestrial
input
input
amplifier
terrestrial
input
amplifiers
LNB
output
amplifiers
satellite dishe(s)
coax out to STB
SWITCH MATRIX
FOR 4 × 4,
NEEDS 16
(SINGLE) PIN
DIODES
coax out to STB
coax out to STB
coax out to STB
brb023
Recommended products
Function
Input
amplifier
terrestrial
Function
Input
amplifier
LNB
Function
Switch
matrix
Product
MMIC
Package
General
purpose
medium
power
amplifier
Product
MMIC
General
purpose
amplifier
RF bipolar
transistor
Wideband
transistor
Product
RF diode
PIN diode
Type
Function
Product
BGA6289
SOT89
BGA6489
MMIC
BGA6589
Package
SOT363
SOT363
SOT363
SOT363
SOT343
SOT343
SOT143
SOT143
Type
BGA2771
BGA2776
BGA2709
BGM1012
BFG325
BFG425W
BFG520
BFG540
Package
Type
BAP50
BAP51
BAP63
BAP64
BAP70
BAP1321
Various
Product highlight:
PIN diodes for switching matrix
Together with outstanding RF performance, this component simplify
design-in because of its extremely low forward resistance, diode
capacitance and series inductance. Significant board space saving
by supplying a range of high compact package options – including
SOD523, SOD323 and leadless SOD882T.
Output
amplifier
RF bipolar
transistor
Package
General
purpose
medium
power
amplifier
General
purpose
amplifier
Wideband
transistor
Type
BGA6289
SOT89
BGA6489
BGA6589
SOT363
SOT363
SOT363
SOT223
SOT223
SOT223
SOT143
BGM1011
BGM1013
BGM1014
BFG135
BFG591
BFG198
BFG540
Features
} High isolation, low distortion, low insertion loss
} Low forward resistance (Rd) and diode capacitance (Cd)
} Ultra-small package options
NXP Semiconductors RF Manual 10th edition
13
1.6 Global Positioning System (GPS)
Application diagram
antenna
LNA
filter
mixer
filter
GPS
IC
oscillator
bra499
Recommended products
Function
LNA
Product
RF bipolar
transistor
MMIC
RF transistor
Wideband
transistor
Low noise wideband
amplifier
General
purpose
wideband
amplifier
SiGeC
transistor
Package
SOT343
SOT343
Type
BFG425W
BFG410W
SOT343R
BGA2001
SOT343R
BGA2003
SOT363
SOT363
SOT363
SOT363
BGM1013
BGM1011
BGA2715
BGA2748
SOT343F
BFU725F
Recommended application notes
Introduction into the GPS front-end*
900 MHz LNA
2 GHz LNA
2 GHz high IP3 LNA
BGAx, BGMx, BGUx
BFG410W
BFG410W
BGA2003
* No web link available, published in Appendix 6 th edition, see RF Manual web page.
Product highlight:
BFU725F SiGeC microwave NPN transistor
} High switching frequency (fT >100 GHz / fMAX >150 GHz)
} Plastic surface-mount SOT343F package
Meet the trend towards higher frequencies. The BFU725F provides
high switching frequencies plus extreme high gain and low noise.
Benefits
} SiGeC process delivers high switching frequency from a
silicon-based device
} Cost-effective alternative to GaAs devices
} RoHS compliant
Features
} Very low noise (0.4 dB at 1.8 GHz / 0.67 dB at 5.8 GHz)
} High maximum stable gain (27.8 dB at 1.8 GHz / 10 dB at 18 GHz)
14
NXP Semiconductors RF Manual 10th edition
1.7 TV / VCR / DVD tuning
Application diagram
antenna
input
filter
RF preamplifier
bandpass
filters
IF
amplifier
mixer
IF out
oscillator
bra500
Recommended products
Function
Product
VHF low
Input filter
Varicap diode
VHF high
UHF
Function
Product
5V
9V
RF
pre-amplifier
MOSFET
2-in-1 @ 5 V
2-in-1 @ 3 V
Package
SOD323
SOD523
SOD323
SOD523
SOD523
SOD323
SOD523
Type
BB152
BB182
BB153
BB178
BB187
BB149A
BB179
Function
Package
SOT143
SOT143
SOT143
SOT143
SOT143
SOT143
SOT143
SOT143
SOT143
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT666
SOT666
SOT363
SOT363
SOT666
Type
BF904
BF909
BF1201
BF1202
BF1105
BF1211
BF1212
BF1100
BF1109
BF1102R
BF1203
BF1204
BF1205
BF1205C
BF1206
BF1207
BF1208
BF1208D
BF1210
BF1214
BF1206F
Function
Product
VHF low
Bandpass
filter
Varicap diode
VHF high
UHF
Product
VHF low
Oscillator
Varicap diode
VHF high
UHF
Function
IF amplifier
Product
MMIC
Wideband
amplifier
Package
SOD323
SOD523
SOD323
SOD523
SOD523
SOD323
SOD523
Type
BB152
BB182
BB153
BB178
BB187
BB149A
BB179
Package
SOD323
SOD523
SOD323
SOD523
SOD523
SOD323
SOD523
Type
BB152
BB182
BB153
BB178
BB187
BB149A
BB179
Package
Type
SOT363
BGA2717
Recommended application notes
Application note for MOSFETs: BF9x, BF110x, BF120x*
BF9x, BF110x, BF120x
rd
* No web link available, published in Appendix 3 edition, see RF Manual web page.
Product highlight:
BF1206F dual gate mosfet double amplifier specified for low
power applications.
The device consists of two dual gate mosfet amplifiers in a small
SOT666 flatlead package. The BF1206F is a true low power
device specified for low voltage and low currents, intended for
use in mobile applications where power consumption is critical.
Performance is suitable for application at supply voltages of 3Volts
and draincurrents of 4mA.
Features
} Low power specified
} Two amplifiers in one small SOT666 package
} Shared gate 2 and Source leads
} Each amplifier is biased by an external bias resistor
} E xcellent noise and crossmodulation performance
NXP Semiconductors RF Manual 10th edition
15
Whatifyoucouldcreateasmaller
formfactor?
LookatUTLPpackages,chapter6
16
NXPSemiconductorsRFManual10thedition
1.8 Car radio receiver (CREST ICs: TEF6860HL, TEF6862HL)
Application diagram
FM input
filter
& AGC
IF
bandpass
filter
1st
mixer
2nd
mixer
variable
BW filter
IF limiter
FM deamplifier modulator
f
AGC &
hum filter
oscillator
V
FM MPX
oscillator
AM LNA
DET
RF input
filter
1st
mixer
IF
bandpass
filter
2nd
mixer
IF
bandpass
filter
IF
AM deamplifier modulator
AM audio
bra501
Recommended products
Function
AM LNA
Product
RF transistor
Function
Product
FM input
filter & AGC
RF diode
JFET
Varicap
diode
PIN diode
Package
SOT23
Type
BF862
Package
SOT23
SOT23
SOD523
SOD323
Type
BB201*
BB207
BAP70-02
BAP70-03
Function
AGC & hum filter
Product
Function
Product
Oscillator
RF diode
RF diode
Package
Type
PIN diode
SOT363
BAP70AM
Varicap
diode
Package
SOD323
SOD523
Type
BB156
BB208-02
* = OIRT
Note 1:
All these recommended discrete products are applicable for
NICEPACS, CCC and DDICE: NICE:TEA6840H,TEA6845H,TEA6846H,
NICEPACS:TEA6848H,TEA6849H; CCC:TEF6901H,TEF6903H; DDICE:
TEA6721HL. All these recommended discrete products are applicable
excluding AM LNA in: DICE2:TEF6730HWCE.
Note 2:
Phone and portable radio (IC:TEA5767/68) use varicap BB202 as FM
oscillator.
Recommended application notes
Low-voltage FM stereo radio (TEA5767/68)*
BB202
A NICE radio (TEA6848H) - Draft**
JFETS,Varicaps and PIN diodes
Integrated Car Radio CCC (TEF69xxx) - Draft** JFETS,Varicaps and PIN diodes
* No web link available, published in Appendix 3 rd edition, see RF Manual web page.
** No web link available, ask your NXP sales representative.
Product highlight:
BF862 Junction Field Effect Transistor
High performance Junction Fet BF862, specially designed for car
radio AM amplifiers.
Our Tuning component portfolio contains excellent products for
car radio reception applications, playing a vital role for in-vehicle
media platforms. The NXP devices for this application ensure
excellent reception quality and ease of design in. Performance is
demonstrated in reference designs.
Features
} High transition frequency and optimized input capacitance for
excellent sensitivity
} High transfer admittance resulting in high gain
} Encapsulated in the versatile and easy to use SOT23 package
NXP Semiconductors RF Manual 10th edition
17
1.9 RF generic front-end for applications with a single antenna:
for e.g. walkie-talkie & remote metering
Application diagram
antenna
filter
LNA
filter
mixer
buffer
SPDT
switch
filter
VCO
PA
driver
LOW
FREQUENCY
CHIP SET
VCO
bra850
Recommended products
Function
SPDT Switch
Product
RF diode
Type
BA277
BA591
BAP51
BAP1321
Function
Package
SOT23
SOT323
SOT323
Low noise
SOT343R
wideband ampl. SOT343R
Type
PBR951
PRF957
PRF947
BGA2001
BGA2003
Function
Package
Wideband
SOT323
transistor
SOT23
Amplifier
SOT363
Gen. purpose SOT363
wideband ampl. SOT363
Type
PRF957
PBR951
BGA2031/1
BGA2771
BGA2776
Bandswitch
diode
PIN diode
Function
LNA
Product
RF bipolar transistor
MMIC
Package
SOD523
SOD323
various
various
Wideband
transistor
Mixer
Buffer
Function
Function
Product
RF bipolar transistor
Driver
MMIC
Product highlight:
PRF957 silicon NPN UHF wideband transistor
Silicon NPN UHF wideband transistor in a surface mount 3-pin
SOT323 package is primarily intended for wideband applications
in the RF front end. The transistor is widely built as LNA, power
amplifier, driver and buffer in the UHF band application.
18
NXP Semiconductors RF Manual 10th edition
Power
amplifier
Function
VCO
Product
RF bipolar transistor
Wideband
transistor
MMIC
Linear mixer
Product
RF bipolar transistor
Product
MMIC
Product
Varicap diodes
Wideband
transistor
Package
SOT343
SOT343
SOT343
SOT363
Type
BFG410W
BFG425W
BFG480W
BGA2022
Package
SOT23
SOT323
SOT323
SOT416
Type
PBR951
PRF957
PRF947
PRF949
Package
Type
BGA6289
BGA6489
BGA6589
Gen. purpose
SOT89
wideband ampl.
Package
VCO varicap SOD523
diodes
SOD323
Type
BB198
BB156
Features
} Small 3-pin plastic surface mounted package
} Low noise (1.3dB at 1GHz) and high power gain (15dB at 1GHz)
} Gold metallization ensures excellent reliability
1.10 RF generic front-end for applications with a dedicated antenna for reception and transmission: for e.g. tire pressure monitoring systems & keyless entry
Application diagram
antenna
filter
receiver
LNA
filter
mixer
LOW
FREQUENCY
CHIP SET
buffer
VCO
antenna
filter
transmitter
PA
driver
VCO
LOW
FREQUENCY
CHIP SET
bra851
Recommended products
Function
LNA
Product
RF bipolar transistor
MMIC
Package
SOT23
SOT323
SOT323
Low noise
SOT343R
wideband ampl. SOT343R
Type
PBR951
PRF957
PRF947
BGA2001
BGA2003
Package
Wideband
SOT323
transistor
SOT23
Amplifier
SOT363
Gen. purpose SOT363
wideband ampl. SOT363
Type
PRF957
PBR951
BGA2031/1
BGA2771
BGA2776
Wideband
transistor
Function
Mixer
Function
Function
Product
RF bipolar transistor
Driver
MMIC
Function
VCO
Product
Varicap diodes
Package
SOD323
VCO varicap SOD323
diodes
SOD523
SOD323
Type
BB148
BB149A
BB198
BB156
Product highlight:
NXP varicap diodes for VCO
Varicap diodes are principally used as voltage varicap capacitors
with their diode function a secondary option. These devices are ideal
for voltage controlled oscillators (VCO) in ISM band applications.
Buffer
Function
Power
amplifier
Product
RF bipolar transistor
Wideband
transistor
MMIC
Linear mixer
Product
RF bipolar transistor Product
RF bipolar transistor
MMIC
Wideband
transistor
Wideband
transistor
Amplifier
Gen. purpose
wideband ampl.
Package
SOT343
SOT343
SOT343
SOT363
Type
BFG410W
BFG425W
BFG480W
BGA2022
Package
SOT23
SOT323
SOT323
SOT416
Type
PBR951
PRF957
PRF947
PRF949
Package
SOT323
SOT23
SOT363
SOT363
SOT363
Type
PRF957
PBR951
BGA2031/1
BGA2771
BGA2776
Features
} E xcellent linearity
} E xcellent matching
} Very low series resistance
} High capacitance ratio
NXP Semiconductors RF Manual 10th edition
19
1.11 Digital Audio Broadcasting (DAB)
Application diagram
antenna
filter
LNA
mixer
filter
CHIPSET
oscillator
bra913
Recommended products
Function
Frequency
Product
RF bipolar
transistor
RF transistor
VHF band
Wideband
transistor
JFET
5V
Mosfet
9V
LNA
RF transistor
RF bipolar
transistor
S-band/
L-band
MMIC
Function
Mixer
Function
VCO
Product
RF bipolar transistor
Wideband
transistor
MMIC
Linear mixer
Product
Varicap diodes
SiGeC
transistor
Wideband
transistor
Low noise
wideband
amplifier
General
purpose
wideband
amplifier
Package
SOT343
SOT343
SOT343
SOT363
Package
VCO varicap SOD323
diodes
Package
SOT23
SOT323
SOT23
SOT143
SOT143R
SOT143
SOT143
SOT143
SOT143
SOT143
SOT143
SOT143
SOT143
Type
BFS17
BFS17W
BF862
BF904
BF904R
BF909
BF1201
BF1202
BF1105
BF1211
BF1212
BF1100
BF1109
SOT343F
BFU725F
SOT343
SOT343
BFG425W
BFG410W
SOT343R
BGA2001
SOT343R
BGA2003
SOT363
SOT363
SOT363
SOT363
BGM1013
BGM1011
BGA2715
BGA2748
Type
BFG410W
BFG425W
BFG480W
BGA2022
Type
BB149
Suitable frequencies for DAB identified on VHF band, L-band and S-band:
• VHF band I: 47 - 68 MHz
• VHF band III: 174 - 240 MHz
• L-band: 1452 - 1467.5 MHz
• S-band: 2310 - 2360 MHz
Product highlight:
BFG410W NPN wideband transistor
NXP NPN double polysilicon wideband transistor with buried layer
is for low voltage and low noise applications in a plastic, 4-pin dualemitter SOT343R package.
20
NXP Semiconductors RF Manual 10th edition
Features
} Very high power gain (18dB at 2GHz)
} Low noise figure (1.2dB at 2GHz)
} High transition frequency (22GHz)
} Emitter is thermal lead
} Low feedback capacitance (45fF)
1.12 Wireless Microphone
Application diagram
antenna
PA
driver
VCO
IC
bra912
Recommended products
Function
PA/Driver
Function
VCO
Product
RF bipolar
transistor
Product
Varicap diodes
Wideband
transistor
Package
SOT23
SOT323
SOT23
SOT323
SOT343
SOT343
SOT343
Package
VCO varicap SOD523
diodes
SOD323
Type
BFT93
BFT93W
PBR951
PRF957
BFG21W
BFG425W
BFG480W
Type
BB145B
BB149
Operation frequency:
• 70M - 72 M
• 150 MHz - 270 MHz
• 470 MHz - 1000 MHz
• 2400 MHz
Product highlight:
BFG480W NPN wideband transistor
NXP NPN double polysilicon wideband transistor with buried layer
is for low voltage and low noise applications in a plastic, 4-pin dualemitter SOT343 package.
Features
} High power gain
} Low noise figure
} High efficiency
} High transition frequency
} Emitter is thermal lead
} Low feedback capacitance
} Linear and non-linear operation
NXP Semiconductors RF Manual 10th edition
21
1.13 Wireless USB
Application diagram
antenna
band pass
LNA
SPDT
switch
PA
CHIPSET
band pass
brb024
Recommended products
Function
LNA
Function
SPDT Switch
Product
RF transistor
SiGeC
transistor
Product
RF diode
PIN diode
Package
Type
SOT343F
BFU725F
Package
various
various
various
SOD882T
SOD882T
various
Type
BAP51
BAP63
BAP64
BAP55LX
BAP142LX
BAP1321
Product highlight:
BFU725F SiGeC microwave NPN transistor
} High switching frequency (fT >100 GHz / fMAX >150 GHz)
} Plastic surface-mount SOT343F package
Meet the trend towards higher frequencies. The BFU725F provides
high switching frequencies plus extreme high gain and low noise.
Benefits
} SiGeC process delivers high switching frequency from a siliconbased device
} Cost-effective alternative to GaAs devices
} RoHS compliant
Features
} Very low noise (0.4 dB at 1.8 GHz / 0.67 dB at 5.8 GHz)
} High maximum stable gain (27.8 dB at 1.8 GHz / 10 dB at 18 GHz)
22
NXP Semiconductors RF Manual 10th edition
1.14 RF front-end for WiMAX applications
Application diagram
antenna 1
filter
PA
filter
TX1
filter
PA
filter
TX2
antenna 2
switch
RF
TRANSCEIVER
switch
BASEBAND
IC
filter
RX1
filter
RX2
brb025
Recommended products
Function
RF
transceiver
Product
1 Rx/1 Tx
2 Rx/1 Tx
2 Rx/2 Tx
1 Rx/1 Tx
2 Rx/1 Tx
2 Rx/2 Tx
1 Rx/1 Tx
Frequency
2.3 - 2.4
2.3 - 2.7
2.3 - 2.7
2.5 - 2.7
3.3 - 3.8
3.3 - 3.8
3.3 - 3.8
Package
SOT619
SOT778
SOT778
SOT619
SOT778
SOT778
SOT619
Type
UXF23480
UXA23465
UXA23466
UXF23460
UXA23475
UXA23476
UXA23470
Product highlight:
UXx234xx
Covering frequencies from 2.3 GHz to 3.8 GHz, these fully
integrated, low-power, direct conversion transceivers easily
allow total WiMAX system solutions to meet TTA, FCC and ETSI
requirements. With dual receiver/transmitter configurations available
they can also deliver better uplink performance and improve your
total end-user system. In addition, low power requirements ensure
longer battery life.
Features
} Fully integrated direct up transmitter and ZIF receiver architecture
} Dual Rx and Tx for MIMO operation
} Low noise, high dynamic range receiver with high linearity
} Fully integrated VCO with integrated supply voltage regulator
} Serial bus digital interface (4 wires)
NXP Semiconductors RF Manual 10th edition
23
1.15 CATV electrical (line extenders)
Application diagram
duplex
filter
RF preamplifier
RF power
amplifier
duplex
filter
coax in
coax out
RF reverse
amplifier
bra505
Recommended products
Function
Product
Frequency
1000MHz
Gain (dB)
33.5 - 35.5
33.5 - 35.5
26.2 - 27.8
21 - 22
33.5 - 35.2
33.5 - 34.5
18 - 19
21 - 22
18 - 19
21 - 22
33.5 - 34.5
34.5 - 36.5
18 - 19
Type
BGY588N
BGY588C
BGY587B
BGY687
BGE788C
BGE788
BGY785A
BGY787
BGY885A
BGY887
BGY888
CGY888C
BGY1085A
Frequency
5-75 MHz
5-120 MHz
5-200 MHz
Gain (dB)
29.2 - 30.8
24.5 - 25.5
23.5 - 24.5
Type
BGY68
BGY66B
BGY67A
550MHz
600MHz
RF
pre-amplifier
Push-Pulls
750MHz
870MHz
Function
RF reverse
amplifier
Product
Reverse
hybrids
Function
Product
Frequency
550MHz
750MHz
RF power
amplifier
Power
doublers
870MHz
1000MHz
Gain (dB)
18-19
19.5 - 20.5
18.2 - 18.8
18.2 - 18.8
20 - 20.6
18 -19
18.2 18.8
19.7 20.3
18.2 -18.8
19.7 -20.3
21.2 - 21.8
19.75 - 20.25
19.25 - 19.75
20.5 - 22.5
23 - 25
20.5 - 22.5
20.5 - 22.5
22.5 - 24.5
22.5 - 24.5
All available in SOT115 package.
Recommended application notes
BGS67A high-dynamic-range hybrid ampl. reverse ampl. 2-way CATV systems
A hybrid wideband amplifier module
for digital CATV networks with BGD902
BGS67A
BGD902
Product highlight:
CGD1044H
CGD1044H with high-output power is primarily designed for use in
fiber deep-optical-node applications (N+0/1/2).
This 1GHz solution offers an extended temperature range, high
power overstress capabilities and high ESD levels resulting in a low
cost of ownership. It’s designed for durability and offering superior
ruggedness.
24
NXP Semiconductors RF Manual 10th edition
Features
} High-output power
} E xcellent linearity, stability, and reliability
} High power gain
} E xtremely low noise
} Silicon Nitride passivity
} GaAs HFET dies for high-end applications
Type
BGD502
BGD704
BGD712
BGD712C
BGD714
BGD802
BGD812
BGD814
BGD902
BGD904
BGD906
CGD914
CGD923
CGD942C
CGD944C
CGD1042
CGD1042H
CGD1044
CGD1044H
1.16 CATV optical (optical node with multiple out-ports)
Application diagram
RF power
amplifier
duplex
filter
coax out
port 1
fiber in
RF forward
receiver
RF preamplifier
splitter
coax out
port 2
coax out
port 3
coax out
port 4
bra852
Recommended products
Function
RF forward
receiver
Function
RF pre-amplifier
Function
RF power
amplifier
Product
Forward path receiver
Product
Frequency
870MHz
Frequency
Push-Pulls
870MHz
Power doubler
870MHz
Product
Power
doublers
Frequency
870MHz
Package
SOT115
SOT115
SOT115
Type
BGO807
BGO807C
BGO827
Gain (dB)
18 - 19
21 - 22
18.2 - 18.8
Type
BGY885A
BGY887
BGD812
Gain (dB)
20.5 - 22.5
23 - 25
Type
CGD942C
CGD944C
Recommended application notes
Using a Philips optical receiver in CATV applications
All optical receivers
Product highlight:
BGO807C
BGO807C is an integrated optical receiver module that provides high
output levels and includes an integrated temperature compensated
circuitry. In your optical node design, BGO807C enables a high
performance/ price ratio and ruggedness. When upgrading an HFC
network from analog to digital our BGO807C is the perfect fit.
Features
} E xcellent linearity
} Low noise
} E xcellent flatness
} Standard CATV outline
} Rugged construction
} Gold metallization ensures excellent reliability
} High optical input power range
NXP Semiconductors RF Manual 10th edition
25
1.17 Optical networking (SFF/SFP modules)
Application diagram
PIN
diode
RF preamplifier
RF power
amplifier
fiber in
Rx data out
module
controller
fiber out
Tx data in
laser
laser
driver
bra507
Recommended products
Function
RF pre-amplifier
Function
Laser driver
Product
Trans­impedance
amplifier
Product
Laser driver
Data rate (Mb/s)
155
622
1200
2488
Package
die only
die only
die only
die only
Data rate (Mb/s) Package
SOT560-01
1250
SOT560-01
Type
TZA3036
TZA3026
TZA3046
TZA3013
Type
TZA3047B
TZA3050
Recommended application notes
OM5811 demo boards supporting TZA47 laser
TZA47
drivers for 30-3200 Mb/s
TZA30x6 – Receiver Optical Sub-Assembly*
TZA30x6
* No web link available for this application note. Please ask your Philips sales representative for assistance.
Product highlight
TZA3046
TZA3046 transimpedance preamplifier brings high receiver
sensitivity, wide dynamic range, and low power dissipation to
Receiver Optical Sub Assemblies (ROSA). TZA3046 is optimized for
Fibre Channel transmission systems and is equipped with a SFF8472compliant output of average photo current for RSSI monitoring.
A clear bonding layout and identical ports on both side of the die
make assembly easy.
26
NXP Semiconductors RF Manual 10th edition
Features
} High receiver sensitivity, low equivalent input noise
} E xceptionally wide bandwidth
} On-chip AGC with options for external control
} Input overload up to 1.5 mA pp
} Differential outputs
} Bias voltage for PIN diode
} Single 3.3-V supply voltage (range: 2.9 to 3.6 V)
Whatifyoucouldgetacosteffective
RFtransistorupto20GHz?
LookatBFU725F,chapter5.5
NXPSemiconductorsRFManual10thedition
2
2. Product portfolio
NXP RF product catalog:
http://www.nxp.com/rf
2.1 New products
DEV = In development
CQS = Customer qualification samples
RFS = Release for supply
Type
Application / Description
Status
September
2007
Planned
release
NEW: RF diodes
BB202LX
BB178LX
BB179BLX
BB179LX
BB181LX
BB182LX
BB184LX
BB185LX
BB187LX
BAP142LX
BAP50LX
BAP51LX
BAP55LX
BAP63LX
BAP64LX
BAP65LX
BAP1321LX
Varicap for mobile radio in cellulars in 1006 leadless package
Varicap for TV & Satellite in 1006 leadless package
Varicap for TV & Satellite in 1006 leadless package
Varicap for TV & Satellite in 1006 leadless package
Varicap for TV & Satellite in 1006 leadless package
Varicap for TV & Satellite in 1006 leadless package
Low voltage varicap for TV & Satellite UHF in 1006 leadless package
Low voltage varicap for TV & Satellite VHF in 1006 leadless package
Low voltage varicap for TV & Satellite VHF in 1006 leadless package
Cellular phone, Bluetooth, Cordless phone -RF switch & FE module in 1006 leadless package
Cellular phone, Bluetooth, Cordless phone -RF switch & FE module in 1006 leadless package
Cellular phone, Bluetooth, Cordless phone -RF switch & FE module in 1006 leadless package
Cellular phone, Bluetooth, Cordless phone -RF switch & FE module in 1006 leadless package
Cellular phone, Bluetooth, Cordless phone -RF switch & FE module in 1006 leadless package
Cellular phone, Bluetooth, Cordless phone -RF switch & FE module in 1006 leadless package
Cellular phone, Bluetooth, Cordless phone -RF switch & FE module in 1006 leadless package
Cellular phone, Bluetooth, Cordless phone -RF switch & FE module in 1006 leadless package
RFS
RFS
CQS
RFS
CQS
CQS
CQS
RFS
CQS
RFS
RFS
RFS
RFS
RFS
RFS
RFS
RFS
Released
Released
Q4 2007
Released
Q4 2007
Q4 2007
Q4 2007
Released
Q4 2007
Released
Released
Released
Released
Released
Released
Released
Released
RFS
RFS
Released
Released
RFS
RFS
RFS
RFS
RFS
Released
Released
Released
Released
Released
RFS
RFS
RFS
RFS
RFS
RFS
RFS
Released
Released
Released
Released
Released
Released
Released
RFS
DEV
DEV
DEV
Released
Q1 2008
Q1 2008
Q1 2008
RFS
RFS
RFS
RFS
RFS
Released
Released
Released
Released
Released
NEW: RF MOS transistors
BF1208D
BF1214
Twin MOSFET with two LNAs for TV/VCR/DVD/STB/SAT with internal switching circuit
Twin MOSFET with two identical VHF-optimized LNA’s
NEW: RF IC, Biasing ASIC and pHEMT GaAs transistors
BGA2714
UAF3000TS
UAF4000TS
TFF1000HN
TFF1004HN
Silicon Gain Block MMIC for Satellite LNB
Biasing ASICs for Satellite LNB
Biasing ASICs for Satellite LNB
Fully integrated Downconverter for Satellite LNB compliant with European and Asian standards
Fully integrated Downconverter for Satellite LNB compliant with European and Asian standards
NEW: RF IC WiMAX
UXA23465
UXA23466
UXA23475
UXA23476
UXF23480
UXF23460
UXA23470
RF WiMAX transceiver 2 Rx/1 Tx
RF WiMAX transceiver 2 Rx/2 Tx
RF WiMAX transceiver 2 Rx/1 Tx
RF WiMAX transceiver 2 Rx/2 Tx
RF WiMAX transceiver 1 Rx/1 Tx
RF WiMAX transceiver 1 Rx/1 Tx
RF WiMAX transceiver 1 Rx/1 Tx
NEW: SiGeC transistors & MMICs
BFU725F
BFU705F
BGU7003
BFU780F
SiGeC transistor for high frequency applications: e.g.: DECT, GPS, Wireless LAN, Satellite Radio (DAB)
SiGeC transistor for high frequency applications: e.g.: LNB 2nd stage (12 GHz)
MMIC for high frequency applications
SiGeC transistor for high frequency applications with high linearity performance
NEW: RF CATV modules
CGD1042
CGD1044
CGD1042H
CGD1044H
CGY888C
28
1000 MHz, 22 dB gain Power Doubler, GaAs HFET SOT115
1000 MHz, 25 dB gain Power Doubler, GaAs HFET SOT115
1000 MHz, 22 dB gain Power Doubler, GaAs HFET SOT115 High output
1000 MHz, 25 dB gain Power Doubler, GaAs HFET SOT115 High output
870 MHz, 35 dB gain Push Pull, GaAs HFET SOT115
NXP Semiconductors RF Manual 10th edition
2.2 RF diodes
NXP varicaps:
http://www.nxp.com/varicaps
NXP RF PIN diodes:
http://www.nxp.com/pindiodes
NXP RF Schottky diodes:
http://www.nxp.com/rfschottkydiodes
2.2.1 Varicap diodes
Why choose NXP semiconductors’ varicap diodes:
• Reference designs for TV and radio tuning
• Direct matching process
• Small tolerances
• Short leadtimes
• Complete portfolio covering broad frequency range and variety in package (including leadless)
• Reliable volume supply
Varicap diodes line-up per frequency
VCO/VCXO
15 GHz
WLAN
3 GHz
VCO
Bluetooth
1 GHz
GPS
BB145B
BB199
BB202
30 MHz
BB208-02/03
BB184
BB149 BB149A
BB179 BB179B
BB185
BB201
BB178 BB187
BB148 BB153
BB131 BB135 BB181
BB207
BB152 BB182
BB198
UHF
300 MHz
UHF/VHF
BB156
Cordless phone
VHF
2V
4V
8V
10 V
28 V
bra508
Many varicap diodes are or will be available in our new UTLP leadless package, look at our varicap portfolio in
this chapter. Also more information on UTLP leadless packaging in Chapter X “Packing and Packaging”.
NXP Semiconductors RF Manual 10th edition
29
VCO varicap diodes
Type
Package
Type of
connection
BB145B
BB202**
BB202LX
BB156
BB198
BB199
BB208-02*
BB208-03*
SOD523
SOD523
SOD882T
SOD323
SOD523
SOD523
SOD523
SOD323
S
S
S
S
S
S
S
S
Cd @ Vr
(pF)
min
6.4
28.2
28.2
14.4
25
36.5
19.9
19.9
max
7.2
33.5
33.5
17.6
28.5
42.5
23.2
23.2
Cd @ Vr
(pF)
(V)
1
0.2
0.2
1
1
0.5
1
1
min
2.55
7.2
7.2
4.2
4.8
11.8
4.5
4.5
Bold
= Highly recommended product
Bold Red = New, highly recommended product
*
= Including special design for FM car radio (CREST-IC:TEF6860).
**
= Including special design for mobile phone tuner ICs.
max
2.95
11.2
11.2
5.4
6.8
13.8
5.4
5.4
TUNING RANGE Cd over voltage range
(V)
ratio (typ.)
V1 to V2
2.2 min
1
4
2.5 min
0.2
2.3
2.5 min
0.2
2.3
3.3
1
7.5
2.8 min
0.5
2
3.7 – 5.2
1
7.5
3.7 – 5.2
1
7.5
(V)
4
2.3
2.3
7.5
4
2
7.5
7.5
rs
(Ω)
(typ.)
0.6 max
0.35
0,35
0.4
0.8 max
0.25
0.35
0.35
Type of connection:
S: Single
CC: Common Cathode
Radio varicap diodes: FM radio tuning
Type
Package
Type of
connection
BB201
BB202**
BB202LX
BB156
BB207*
BB208-02*
BB208-03*
SOT23
SOD523
SOD882T
SOD323
SOT23
SOD523
SOD323
CC
S
S
S
CC
S
S
Cd @ Vr
(pF)
min
89
28.2
28.2
14.4
76
19.9
19.9
max
102
33.5
33.5
17.6
86
23.2
23.2
Cd @ Vr
(pF)
(V)
1
0.2
0.2
1
1
1
1
min
25.5
7.2
7.2
4.2
25.5
4.5
4.5
Bold
= Highly recommended product
Bold Red = New, highly recommended product
*
= Including special design for FM car radio (CREST-IC:TEF6860).
**
= Including special design for mobile phone tuner ICs.
max
29.7
11.2
11.2
5.4
29.7
5.4
5.4
TUNING RANGE Cd over voltage range
(V)
ratio (typ.)
V1 to V2
3.1
1
7.5
2.5
0.2
2.3
2.5
0.2
2.3
2.7
1
7.5
2.6
1
7.5
3.7 – 5.2
1
7.5
3.7 – 5.2
1
7.5
(V)
7.5
2.3
2.3
7.5
7.5
7.5
7.5
rs
(Ω)
(typ.)
0.25
0.35
0,35
0.4
0.2
0.35
0.35
Type of connection:
S: Single
CC: Common Cathode
TV & satellite varicap diodes - UHF tuning
Type
Package
Matched
BB149
BB149A
BB179
BB179LX
BB179B
BB179BLX
BB184
BB184LX
Unmatched
BB135
Cd @ Vr
(pF)
Type of
connection
min
max
(V)
rs
(Ω)
MATCHED
SETS
TYPICAL APPLICATIONS
(typ.)
%
TV
VCO
SAT.
STB
SOD323
SOD323
SOD523
SOD882T
SOD523
SOD882T
SOD523
SOD882T
S
S
S
S
S
S
S
S
1.90
1.951
1.951
1.951
1.90
1.90
1.87
1.87
2.25
2.225
2.225
2.225
2.25
2.25
2.13
2.13
28
28
28
28
28
28
10
10
9.0
9.0
9.0
9.0
9.0
9.0
7
7
1
1
1
1
1
1
1
1
28
28
28
28
28
28
10
10
0.75
0.75
0.75 max
0.65
0.75 max
0.65
0.65
0.65
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
X
X
X
X
X
X
X
X
X
X
X
X
-
X
X
X
X
X
X
-
SOD323
S
1.70
2.10
28
9.9 - 12
0.5
28
0.75
-
X
X
-
-
Red
= New
Bold
= Highly recommended product
Bold Red = New, highly recommended product
30
TUNING RANGE Cd over voltage range
(V)
ratio (typ.)
V1 to V2
NXP Semiconductors RF Manual 10th edition
Type of connection:
S: Single
CC: Common Cathode
TV & satellite varicap diodes - VHF tuning
Type
Matched
BB148
BB152
BB153
BB178
BB178LX
BB182
BB182LX
BB185LX
BB187
BB187LX
Unmatched
BB131
BB181
BB181LX
BBY40
Package
Cd @ Vr
(pF)
Type of
connection
min
max
(V)
TUNING RANGE Cd over voltage range
(V)
ratio (typ.)
V1 to V2
rs
(Ω)
MATCHED
SETS
TYPICAL APPLICATIONS
(typ.)
%
TV
VCO
SAT.
STB
SOD323
SOD323
SOD323
SOD523
SOD882T
SOD523
SOD882T
SOD882T
SOD523
SOD882T
S
S
S
S
S
S
S
S
S
S
2.4
2.48
2.361
2.361
2.361
2.48
2.48
2.45
2.57
2.57
2.75
2.89
2.754
2.754
2.754
2.89
2.89
2.97
2.92
2.92
28
28
28
28
28
28
28
10
25
25
15
22
15
15
15
22
22
12
11 min.
11 min
1
1
1
1
1
1
1
1
2
2
28
28
28
28
28
28
28
10
25
25
0.9 max
1.0
0.65
0.65
0.7
1.0
1.0
0.75
0.75 max
0.75
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
X
X
X
X
X
X
X
X
X
X
X
-
-
X
X
X
X
X
X
X
X
X
SOD323
SOD523
SOD882T
SOT23
S
S
S
0.7
0.7
0.7
4.3
1.055
1.055
1.055
6.0
28
28
28
25
14
14
14
5.5
0.5
0.5
0.5
3
28
28
28
25
3 max
3 max
2.0
0.7 max
-
X
X
X
X
-
X
X
X
-
X
X
X
X
Red
= New
Bold
= Highly recommended product
Bold Red = New, highly recommended product
Type of connection:
S: Single
CC: Common Cathode
NXP Semiconductors RF Manual 10th edition
31
2.2.2 PIN diodes
Why choose NXP Semiconductors’ PIN diodes:
• Broad portfolio
• Unrivalled performance
• Short leadtimes
• Low series inductance
• Low insertion loss
• Low capacitance
PIN diodes
Type
Package
BAP50-02
BAP50-03
BAP50-04
BAP50-04W
BAP50-05
BAP50-05W
BAP50LX
BAP51LX
BAP51-02
BAP51-03
BAP51-04W
BAP51-05W
BAP51-06W
BAP55LX
BAP63-02
BAP63-03
BAP63-05W
BAP63LX
BAP64-02
BAP64-03
BAP64-04
BAP64-04W
BAP64-05
BAP64-05W
BAP64-06
BAP64-06W
BAP64LX
BAP65-02
BAP65-03
BAP65-05
BAP65-05W
BAP65LX
BAP70AM
BAP70-02
BAP70-03
BAP70-04W
BAP70-05
BAP1321-02
BAP1321-03
BAP1321-04
BAP1321LX
BAP142LX
SOD523
SOD323
SOT23
SOT323
SOT23
SOT323
SOD882T
SOD882T
SOD523
SOD323
SOT323
SOT323
SOT323
SOD882T
SOD523
SOD323
SOT323
SOD882T
SOD523
SOD323
SOT23
SOT323
SOT23
SOT323
SOT23
SOT323
SOD882T
SOD523
SOD323
SOT23
SOT323
SOD882T
SOT363
SOD523
SOD323
SOT323
SOT23
SOD523
SOD323
SOT23
SOD882T
SOD882T
Conf
S
S
SS
SS
CC
CC
S
S
S
S
SS
CC
CA
S
S
S
CC
S
S
S
SS
SS
CC
CC
CA
CA
S
S
S
CC
CC
S
SS
S
S
SS
CC
S
S
SS
S
S
Limits
RD (Ω) typ @
Vr(V) If(mA) 0.5mA 1 mA 10 mA 50
50
25
14
3
50
50
25
14
3
50
50
25
14
3
50
50
25
14
3
50
50
25
14
3
50
50
25
14
3
50
50
25
14
3
60
60
5.5
3.6
1.5
60
50
5.5
3.6
1.5
50
50
5.5
3.6
1.5
50
50
5.5
3.6
1.5
50
50
5.5
3.6
1.5
50
50
5.5
3.6
2
50
100
3.4
2.3
1
50
100
2.5
1.95
1.17
50
100
2.5
1.95
1.17
50
100
2.5
1.95
1.17
50
100
2.5
1.95
1.17
175
100
20
10
2
175
100
20
10
2
175
100
20
10
2
100
100
20
10
2
175
100
20
10
2
100
100
20
10
2
175
100
20
10
2
100
100
20
10
2
100
100
20
10
2
30
100
1
0.56
30
100
1
0.56
30
100
1
0.56
30
100
1
0.56
30
100
1
0.56
50
100
77
40
5.4
50
100
77
40
5.4
50
100
77
40
5.4
50
100
77
40
5.4
50
100
77
40
5.4
60
100
3.4
2.4
1.2
60
100
3.4
2.4
1.2
60
100
3.4
2.4
1.2
60
100
3.4
2.4
1.2
50
100
3.3
2.4
1
Bold
= Highly recommended product
Bold Red = New, highly recommended product
S
= Single
SS
= Series
CC
= Common Cathode
CA
= Common Anode
32
NXP Semiconductors RF Manual 10th edition
0V
0.4
0.4
0.45
0.45
0.45
0.45
0.45
0.4
0.4
0.4
0.4
0.4
0.4
0.27
0.36
0.4
0.4
0.4
0.48
0.48
0.52
0.52
0.52
0.52
0.52
0.52
0.52
0.65
0.65
0.65
0.65
0.65
0.57
0.57
0.57
0.57
0.57
0.4
0.4
0.4
0.4
0.26
Cd (pF) type @
1V
20V
0.3
0.22 @ 5V
0.3
0.2 @ 5V
0.35
0.3 @ 5V
0.35
0.3 @ 5V
0.35
0.3 @ 5V
0.35
0.3 @ 5V
0.35
0.3 @ 5V
0.3
0.2 @ 5V
0.3
0.2 @ 5V
0.3
0.2 @ 5V
0.3
0.2 @ 5V
0.3
0.2 @ 5V
0.3
0.2 @ 5V
0.23
0.18 @ 5V
0.32
0.25
0.35
0.27
0.35
0.3
0.35
0.3
0.35
0.23
0.35
0.23
0.37
0.23
0.37
0.23
0.37
0.23
0.37
0.23
0.37
0.23
0.37
0.23
0.37
0.23
0.55
0.375
0.55
0.375
0.55
0.375
0.55
0.375
0.6
0.375
0.4
0.2
0.4
0.2
0.4
0.2
0.4
0.2
0.4
0.2
0.35
0.25
0.35
0.25
0.35
0.25
0.35
0.25
0.23
0.15
2.2.3 Band-switch diodes Why choose NXP Semiconductors’ bandswitch diodes:
• Reliable volume supplier
• Short leadtimes
• Low series Inductance
• Low Insertion loss
• Low capacitance
• High reverse Isolation
Type
Package
BA277
BA278
BA891
BA591
BA792
BAT18
SOD523
SOD523
SOD523
SOD323
SOD110
SOT23
MAXIMUM RATINGS
VR(V)
IF(mA)
35
35
35
35
35
35
100
100
100
100
100
100
CHARACTERISTICS ; maximals
Rd @ IF and f
Cd @VR and f
(mA) (MHz)
(pF)
(V)
(MHz)
Ω
0.7
2
100
1.2
6
1
0.7
2
100
1.2
6
1
0.7
3
100
0.9
3
1
0.7
3
100
0.9
3
1
0.7
3
200
1.1
3
1 to 100
0.7
5
200
1.0
20
1
Bold= Highly recommended product
NXP Semiconductors RF Manual 10th edition
33
2.2.4 Schottky diodes Why choose NXP Semiconductors’ schottky diodes:
• (Very) low diode capacitance
• (Very) low forward voltage
• Single and triple-isolated diode
• (Ultra / very) small package
Applications
• Digital applications:
- ultra high-speed switching
- clamping circuits
• RF applications:
- diode ring mixer
- RF detector
- RF voltage doubler
Low-capacitance Schottky diodes
Type
Package
BAT17
PMBD353
PMBD354
1PS76SB17
1PS66SB17
1PS79SB17
1PS88SB82
1PS70SB82
1PS70SB84
1PS70SB85
1PS70SB86
1PS66SB82
1PS10SB82
SOT23
SOT23
SOT23
SOD323
SOT666
SOD523
SOT363
SOT323
SOT323
SOT323
SOT323
SOT666
SOD882
34
VR max.
(V)
4
4
4
4
4
4
15
15
15
15
15
15
15
NXP Semiconductors RF Manual 10th edition
IF max.
(mA)
30
30
30
30
30
30
30
30
30
30
30
30
30
VF max.
(mV)
450 @ IF = 1 mA
450 @ IF = 1 mA
450 @ IF = 1 mA
450 @ IF = 1 mA
450 @ IF = 1 mA
450 @ IF = 1 mA
340 @ IF = 1 mA
340 @ IF = 1 mA
340 @ IF = 1 mA
340 @ IF = 1 mA
340 @ IF = 1 mA
340 @ IF = 1 mA
340 @ IF = 1 mA
CD max.
(pF)
1 @ VR = 0 V
1 @ VR = 0 V
1 @ VR = 0 V
1 @ VR = 0 V
1 @ VR = 0 V
1 @ VR = 0 V
1 @ VR = 0 V
1 @ VR = 0 V
1 @ VR = 0 V
1 @ VR = 0 V
1 @ VR = 0 V
1 @ VR = 0 V
1 @ VR = 0 V
2.3 RF Bipolar transistors
2.3.1 Wideband transistors
RF wideband transistors:
http://www.nxp.com/rftransistors
Why choose NXP Semiconductors’ wideband transistors:
st
th
• Broad portfolio (1 - 7 generation)
• Short leadtimes
• Smallest packages
• Volume delivery
Wideband transistors
The f T-IC curve represents Transition Frequency (f T)
characteristics as a function of collector current (IC ) for the six
generations of RF wideband transistors. A group of transistors
having the same collector current (IC ) & similar transition
frequencies (f T) represents a curve. The curve number matches
products in the table, detailing their RF characteristics.
Wideband transistors line-up per frequency
bra510
100
(33)
7th generation
fT
(GHz)
(27)
(26)
(32)
(25)
(31)
(30)
10
(29)
(21)
(20)
(19)
(15)
(14)
(22)
(7)
(9)
(8)
(16)
3rd generation
2nd generation
(1)
0.2
0.5
1
(3)
2
(12)
(10)
(4)
1
0.1
4th generation
(23)
(11)
(18)
5th generation
5
10
1st generation
20
50
100
200
500
IC (mA)
1000
NXP Semiconductors RF Manual 10th edition
35
Wideband transistors (RF small signal)
Curve Package
Type
BFG10(X)
BFG10W/X
BLT80
BLT81
BLT50
BLT70
BFS17
BFS17W
BFT25
BFS17A
BFG35
BFQ18A
BFG25A/X
BFG25AW/X
BFG31
BFG590(/X)
BFG92A(/X)
BFQ149
BFR106
BFR92A
BFR92AW
BFR93AW
BFS25A
BFT25A
BFT92
BFT92W
BFT93
BFT93W
BFG97
BFQ19
BFG93A(/X)
BFG94
BFR93A(R)
BFG135
BFG591
BFQ591
BFG198
BFG67(/X)
BFQ67
BFQ67W
PBR941
PBR951
PRF947
PRF957
BFG505(/X)
BFG505W/X
BFG520(/X)
BFG520W(/X)
BFG540(/X)
BFG540W(/X/XR)
BFG541
BFM505
BFM520
BFQ540
BFR505
BFR505T
BFR520
BFR520T
BFR540
BFS505
BFS520
BFS540
PRF949
BFG310W/XR
BFG310/XR
BFG325W/XR
BFG325/XR
BFG403W
BFG21W
BFG480W
BFG410W
BFG424F
BFG424W
BFG425W
BFU725F
23
23
3
3
1
4
11
11
18
18
10
22
7
10
10
7
7
8
18
18
7
7
9
9
10
10
8
8
8
16
22
22
15
14
14
14
20
21
20
21
19
19
20
20
21
21
21
19
20
21
19
19
20
20
21
19
20
21
20
30
30
31
31
25
32
29
26
27
27
27
33
SOT143
SOT343
SOT223
SOT223
SOT223
SOT223
SOT23
SOT323
SOT23
SOT23
SOT223
SOT89
SOT143
SOT343
SOT223
SOT143
SOT143
SOT89
SOT23
SOT23
SOT323
SOT323
SOT323
SOT23
SOT23
SOT323
SOT23
SOT323
SOT223
SOT89
SOT143
SOT223
SOT23
SOT223
SOT223
SOT89
SOT223
SOT143
SOT23
SOT323
SOT23
SOT23
SOT323
SOT323
SOT143
SOT343
SOT143
SOT343
SOT143
SOT343
SOT223
SOT363
SOT363
SOT89
SOT23
SOT416
SOT23
SOT416
SOT23
SOT323
SOT323
SOT323
SOT416
SOT343XR
SOT143XR
SOT343XR
SOT143XR
SOT343
SOT343
SOT343
SOT343
SOT343F
SOT343
SOT343
SOT343F
FT
Vceo
(GHz) (V)
8
10
10
9.5
10
8
1
15
1.6
15
2.3
5
2.8
15
4
18
4
18
5
5
5
5
5
15
5
15
5
15
5
15
5
15
5
15
5
15
5
12
5
5
5
5
5
15
4
15
5
12
5
12
5.5
15
5.5
15
6
12
6
12
6
12
7
15
7
15
7
15
8
10
8
10
8
10
8
10
8
10
8
10
8.5
10
8.5
10
9
15
9
15
9
15
9
15
9
15
9
15
9
15
9
8
9
8
9
15
9
15
9
15
9
15
9
9
15
9
15
9
15
9
15
9
10
14
6
14
6
14
6
14
6
17
4.5
18
4.5
21
4.5
22
4.5
25
4.5
25
4.5
25
4.5
70
2.9
Bold= Highly recommended product
Bold Red = New, highly recommended product
36
NXP Semiconductors RF Manual 10th edition
Ic
Ptot Polarity GUM
(mA) (mW)
(dB)
250
250
NPN
250
400
NPN
250 2000
NPN
>6
500 2000
NPN
>6.5
500 2000
NPN
10
250 2100
NPN
>6
25
300
NPN
50
300
NPN
6.5
30
NPN
18
25
300
NPN
13.5
150 1000
NPN
15
150 1000
NPN
6.5
32
NPN
18
6.5
500
NPN
16
100 1000
PNP
16
200
400
NPN
13
25
400
NPN
16
100 1000
PNP
12
100
500
NPN
11.5
25
300
NPN
14
25
300
NPN
14
35
300
NPN
13
6.5
32
NPN
13
6.5
32
NPN
15
25
300
PNP
18
35
300
PNP
17
35
300
PNP
16.5
50
300
PNP
15.5
100 1000
NPN
16
100 1000
NPN
11.5
35
300
NPN
16
60
700
NPN
19
35
300
NPN
13
150 1000
NPN
16
200 2000
NPN
13
200 2000
NPN
11
100 1000
NPN
18
50
380
NPN
17
50
300
NPN
14
50
300
NPN
13
50
360
NPN
15
100
365
NPN
14
50
250
NPN
16
100
270
NPN
15
18
150
NPN
20
18
500
NPN
19
70
300
NPN
19
70
500
NPN
17
120
500
NPN
18
120
500
NPN
16
120
650
NPN
15
18
500
NPN
17
70
1000
NPN
15
120 1200
NPN
18
150
NPN
17
18
150
NPN
17
70
300
NPN
15
70
150
NPN
15
120
500
NPN
14
18
150
NPN
17
70
300
NPN
15
120
500
NPN
14
50
150
NPN
16
10
60
NPN
18
10
60
NPN
18
35
210
NPN
18.3
35
210
NPN
18.3
3.6
16
NPN
20
500
600
NPN
250
360
NPN
12
54
NPN
30
135
NPN
30
135
NPN
30
135
NPN
40
NPN
25
NF
(dB)
4.5
4.5
3.8
2.5
1.8
2
2
3.75
3.5
2.1
2
1.5
1.8
1.8
2.5
2.5
2.4
2.4
3.3
1.7
2.7
1.9
1.7
1.7
1.3
1.4
1.3
1.5
1.3
1.6
1.6
1.6
1.1
1.3
1.3
1.3
1.1
1.2
1.9
1.2
1.2
1.1
1.1
1.3
1.2
1.1
1.3
1.5
1.0
1.0
1.1
1.1
1
1.2
0.9
0.8
0.8
0.8
0.7
@
(MHz)
900
900
470
900
500
500
500
800
500
1000
1000
500
900
1000
500
800
1000
1000
1000
1000
1000
500
500
500
500
500
500
1000
500
1000
500
900
900
500
1000
1000
1000
1000
1000
1000
1000
900
900
900
900
900
900
900
900
900
900
900
900
900
900
900
900
900
900
1000
1000
1000
3000
3000
900
900
900
900
900
900
2400
GUM
(dB)
7
7
12
11
8
12
7.5
11
8
8
8
11
10
12
7.5
10
13.5
12
7.5
5.5
15
10
8
8
9.5
8
10
9.2
13
12
13
11
11
10
9
10
9
10
9
9
7
10
9
8
10
2.2
10
16
21
23
22
20
17
NF
(dB)
3
3
3
2.1
3
3
2.3
3
3
2.5
2.7
2.7
2
2
2.1
1.8
1.9
1.9
1.9
1.85
2.1
2.1
2.1
1.9
1.9
1.9
1.9
1.9
2.1
1.9
1.9
2.1
2.1
1.6
1.8
1.2
1.2
1.2
1.2
0.7
@
(MHz)
1900
1900
800
800
2000
800
2000
2000
2000
2000
2000
1000
1000
800
800
2000
1000
2000
800
2000
2000
800
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
1900
2000
2000
2000
2000
2000
5800
Vo
(mV)
150
750
550
350
150
150
300
700
500
425
850
700
700
275
275
500
500
500
500
550
-
P1 (1dB) ITO
(dBm) (dBm)
21.5
34
4
10
1
10
17
26
17
26
21
34
21
34
21
34
4
10
17
26
17
26
21
34
4
10
17
26
21
34
1.8
8.5
1.8
8.5
8.7
19.4
8.7
19.4
5
6
20
28
5
15
12
22
12
22
12
22
8
19
@ Ic & Vce
(mA)
(V)
14
10
100
10
70
10
50
9
14
10
14
10
30
5
70
10
45
10
30
8
100
10
70
12
70
8
5
6
5
6
20
6
20
6
40
8
40
8
40
8
40
8
5
6
20
6
40
8
5
6
20
6
40
8
5
3
5
3
15
3
15
3
1
1
80
2
10
2
25
2
25
2
25
2
25
2
Whatifyoucouldimprovethe
receptionofyoursmartphone?
LookatBAWfiltersandduplexers,chapter5.1
NXPSemiconductorsRFManual10thedition
3
2.4 RF ICs 2.4.1 MMICs NXP RF MMICs:
http://www.nxp.com/mmics
Why choose NXP Semiconductors’ MMICs:
• Reduced RF component count
• Easy circuit design-in
• Reduced board size
• Short time-to-market
• Broad portfolio
• Volume delivery
• Short leadtimes
General-purpose wideband amplifiers (50 Ohm gain blocks)
Type
Package
BGA2711
BGA2748
BGA2771
BGA2776
BGA2709
BGA2712
BGM1011
BGM1012
BGM1013
BGM1014
BGA2714
BGA2715
BGA2716
BGA2717
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
@
Vs
(V)
5
3
3
5
5
5
5
3
5
5
3
5
5
5
Fu (1)
Is
@-3dB
(mA) (GHz)
12.6
3.6 (2)
5.7
1.9
33.3
2.4
24.4
2.8
23.5
3.6
12.3
3.2
25.5
(2)
14.6 3.6
27.5
2.1
21.0 (2)
2.5
4.58
2.7
4.3 (2)
3.3
15.9 (2)
3.2
8.0
3.2
NF
(dB)
4.8
1.9 (2)
4.5
4.9
4.0
3.9
4.7
4.8
4.6
4.2
2.2
2.6
5.3
2.3 (2)
@ 1GHz
Psat Gain (3)
(dBm) (dB)
2.8
13.1
-2.3
21.8
13.2 (2) 21.4
10.5 23.2 (2)
12.5
22.7
4.8
21.3
13.8
30 (2)
9.7
20.1
14.0 35.5 (2)
12.9
32.3
-3.4
20.4
-4.0
21.7
11.6
22.9
1.4
23.9
P1dB OIP3
(dBm) (dBm)
-0.7
8.3
-9.2
-1.9
12.1
21.9
7.2
18.6
8.3
22
0.2
11
12.2
23
5.6
18
12.0
22.7
11.2
20.5
-7.9
2.1
-8.0
2.3
8.9
22.2
-2.6
10.0
100
MHz
13.0
14.8
20.3
22.4
22.2
20.8
25.0
19.5
35.2
30.0
20.8
13.3
22.1
18.6
Gain (3) (dB) @
2.2
2.6
GHz
GHz
14.1
13.8
17.6
15.0
20.4
17.9
23.2
21.8
23.0
22.1
21.9
21.2
37.0
32.0
20.4
19.9
31.8
29.7
34.1
30.5
20.8
19.4
23.3
22.1
22.8
22.1
25.1
24.0
3.0
GHz
12.7
11.9
15.5
19.3
21.1
19.3
28.0
18.7
26.1
26.4
16.8
20.1
20.8
22.1
Vs
(V)
6
4
4
6
6
6
6
4
6
6
4
6
6
6
Limits
Is
Ptot
(mA) (mW)
20
200
15
200
50
200
34
200
35
200
25
200
35
200
50
200
35
200
30
200
10
200
8
200
25
200
15
200
Bold Red = New, highly recommended product
Notes: (1) Upper -3 dB point, to gain at 1 GHz. (2) Optimized parameter (3) Gain = |S 21|2
2-stage variable-gain linear amplifier
Type
Package
BGA2031/1
SOT363
@
Vs
(V)
3
Is
(mA)
51
Frequency
Range
800-2500
@ 900MHz
@1900 MHz
Gain (1) DG (2) P1dB ACPR Gain (1) DG (2) P1dB ACPR
(dB)
(dB) (dBm) (dBc)
(dB)
(dB) (dBm) (dBc)
24
62
11
49
23
56
13
49
Vs
(V)
3.3
Limits
Is
Ptot
(mA) (mW)
77
200
Vs
(V)
4
Limits
Is
Ptot
(mA) (mW)
10
40
Notes: (1) Gain = GP, power gain. (2) DG = Gain control range
Wideband linear mixer
Type
Package
BGA2022
SOT363
@
Vs
(V)
3
Is
(mA)
6
RF Input
Frequency
Range
800-2500
IF Output
Frequency
Range
50-500
NF
(dB)
9
@ 880MHz
@1900 MHz
Gain (1) OIP3 NF Gain (1) OIP3 (dB) (dBm) (dB)
(dB) (dBm)
5
4
9
6
10
Notes: (1) Gain = GP, power gain. (2) DG = Gain control range
Low-noise wideband amplifiers
Type
Package
BGA2001
BGA2003
BGA2011
BGA2012
SOT343R
SOT343R
SOT363
SOT363
@
Vs
(V)
2.5
2.5
3
3
Is
(mA)
4
10 (2)
15
7
NF
(dB)
1.3
1.8
1.5
-
Notes: (1) MSG (2) Adjustable bias (3) |S 21|2 38
NXP Semiconductors RF Manual 10th edition
@ 900MHz
Gain
IIP3
(dB) (dBm)
22 (1)
-7.4
24 (1)
-6.5
19 (3)
10
-
@1800 MHz
NF
Gain
IIP3
(dB)
(dB) (dBm)
1.3
19.5 (1)
-4.5
1.8
16 (1)
-4.8
1.7
16 (3)
10
100
MHz
20
26
24
22
Gain (3) (dB) @
1
2.6
GHz
GHz
17.1
11.6
18.6
11.1
14.8
8
18.2
11.6
3.0
GHz
10.7
10.1
6.5
10.5
Vs
(V)
4.5
4.5
4.5
4.5
Limits
Is
Ptot
(mA) (mW)
30
135
30
135
30
135
15
70
General-purpose, med. power ampl. (50 ohm gain blocks)
Type
BGA6289
BGA6489
BGA6589
Package
SOT89
SOT89
SOT89
@
Vs (1)
(V)
4.1
5.1
4.8
Is
(mA)
84
78
81
NF
(dB)
3.5
3.1
3.0
@ 900MHz
Gain (2) OIP3 P1dB
(dB) (dBm) (dBm)
15
31
17
20
33
20
22
33
21
NF
(dB)
3.7
3.3
3.3
@1800 MHz
Gain (2) OIP3 P1dB
(dB) (dBm) (dBm)
13
28
15
16
30
17
17
32
20
Gain (2)
2.5 GHz
12
15
15
Vs (1)
(V)
6
6
6
Limits
Is
Ptot
(mA) (mW)
120
480
120
480
120
480
Notes: (1) Device voltage without bias resistor. (2) Gain = |S 21|2
2.4.2 Satellite LNB RF ICs
Why choose NXP Semiconductors’ RF ICs:
• Lowest total cost of ownership
• Alignment free concept
• Easy circuit design-in
• Improved LO stability
Satellite LNB Downconverter ICs
Package
TFF1000HN
TFF1004HN
Input frequency range
Conversion gain
Noise figure
Output IP3
Switched LO
frequency
(GHz)
Gc (dB) NF (dB)
IP3(out) (dB)
(GHz)
10.7 to 12.75
10.7 to 12.75
42
32
9
9
10
10
9.75 / 10.6
9.75 / 10.6
Package
Supply voltage
Drain voltage
Drain current
Supply current
Polarisation detection voltage
VCC (V)
V D (V) IDO (mA)
ICC (mA)
VPOL (V)
SOT360
SOT403
3.3 or 5
3.3 or 5
2
2.2
10
10
6
6
14.75
-
SOT616
SOT616
Satellite LNB Biasing ICs
UAF3000TS
UAF4000TS
2.4.3 WiMAX RF ICs
Why choose NXP Semiconductors’ RF WiMAX transceivers:
• Extremely low noise figure
• Support for flexible calibration techniques ensures optimum performance and lowest power
• Field proven solution
• No external IF filter required
• Minimal external component requirement
RF WiMAX transceivers
UXA23465
UXA23466
UXA23475
UXA23476
UXF23480
UXF23460
UXA23470
Frequency
range (GHz)
Type
NF (dB)
Rx gain
(max)
ICC (mA)
RX/TX
Tx gain
range (dB)
2.3 - 2.7
2.3 - 2.7
3.3 - 3.8
3.3 - 3.8
2.3 - 2.4
2.5 - 2.7
3.3 - 3.8
2 Rx/1 Tx
2 Rx/2 Tx
2 Rx/1 Tx
2 Rx/2 Tx
1 Rx/1 Tx
1 Rx/1 Tx
2 Rx/1 Tx
2,5
2,5
3
3
3,2
3,5
3
87
87
87
87
79
77
87
81/78
81/140
83/85
83/154
129/153
129/140
50/85
74
74
74
74
74
74
74
Linear output power
meeting spectrum mask
(dBm)
+2.5 (TTA) +1 (ETSI, FCC)
+2.5 (TTA) +1 (ETSI, FCC)
0 (ETSI)
0 (ETSI)
+1
+2
(0) ETSI
Package size
HVQFN48 (mm)
6 x 6 x 0.85
6 x 6 x 0.85
6 x 6 x 0.85
6 x 6 x 0.85
7 x 7 x 0.85
7 x 7 x 0.85
6 x 6 x 0.85
Bold Red = New, highly recommended product
NXP Semiconductors RF Manual 10th edition
39
2.5 RF MOS transistors 2.5.1 JFETs NXP RF FETs:
http://www.nxp.com/rffets
Why choose NXP Semiconductors’ JFETs:
• Reliable volume supplier
• Short leadtimes
• Broad portfolio
N-channel junction field-effect transistors for switching
Type
Package
BSR56
BSR57
BSR58
PMBFJ108
PMBFJ109
PMBFJ110
PMBFJ111
PMBFJ112
PMBFJ113
J108
J109
J110
J111
J112
J113
PMBF4391
PMBF4392
PMBF4393
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT54
SOT54
SOT54
SOT54
SOT54
SOT54
SOT23
SOT23
SOT23
VDS
(V)
max
40
40
40
25
25
25
40
40
40
25
25
25
40
40
40
40
40
40
IG
(mA)
max
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
I DSS
(mA)
min
max
50
20
100
8
80
80
40
10
20
5
2
80
40
10
20
5
2
50
150
25
75
5
30
-Vgsoff
(V)
min
max
4
10
2
6
0.8
4
3
10
2
6
0.5
4
3
10
1
5
0.5
3
3
10
2
6
0.5
4
3
10
1
5
0.5
3
4
10
2
5
0.5
3
CHARACTERISTICS R DSON
Crs
(pF)
(Ω)
max
min
max
25
5
40
5
60
5
8
15
12
15
18
15
30
typ.3
50
typ.3
100
typ.3
8
15
12
15
18
15
30
typ.3
50
typ.3
100
typ.3
30
3.5
60
3.5
100
3.5
t on
(ns)
typ
4
4
4
13
13
13
4
4
4
13
13
13
-
t off
(ns)
max
15
15
15
typ
6
6
6
35
35
35
6
6
6
35
35
35
-
max
25
50
100
20
35
50
P-channel junction field-effect transistors for switching
Type
Package
PMBFJ174
PMBFJ175
PMBFJ176
PMBFJ177
J174
J175
J176
J177
40
SOT23
SOT23
SOT23
SOT23
SOT54
SOT54
SOT54
SOT54
VDS
(V)
max
30
30
30
30
30
30
30
30
IG
(mA)
max
50
50
50
50
50
50
50
50
I DSS
(mA)
min
max
20
135
7
70
2
35
1.5
20
20
135
7
70
2
35
1.5
20
NXP Semiconductors RF Manual 10th edition
-Vgsoff
(V)
min
max
5
10
3
6
1
4
0.8
2.25
5
10
3
6
1
4
0.8
2.25
CHARACTERISTICS R DSON
Crs
(pF)
(Ω)
max
min
max
85
typ.4
125
typ.4
250
typ.4
300
typ.4
85
typ.4
125
typ.4
250
typ.4
300
typ.4
t on
(ns)
typ
7
15
35
45
7
15
35
45
t off
(ns)
max
-
typ
15
30
35
45
15
30
35
45
max
-
N-channel junction field-effect transistors for general RF applications
Type
Package
VDS
(V)
max
IG
(mA)
max
I DSS
(mA)
min
max
CHARACTERISTICS Vgs off
|Yfs|
(mS)
(V)
min
max
min
max
DC, LF and HF amplifiers
BF245A
SOT54
30
10
2
6.5
<8
BF245B
SOT54
30
10
6
15
<8
BF245C
SOT54
30
10
12
25
<8
BF545A
SOT23
30
10
2
6.5
0.4
7.5
BF545B
SOT23
30
10
6
15
0.4
7.5
BF545C
SOT23
30
10
12
25
0.4
7.5
BF556A
SOT23
30
10
3
7
0.5
7.5
BF556B
SOT23
30
10
6
13
0.5
7.5
BF556C
SOT23
30
10
11
18
0.5
7.5
Pre-amplifiers for AM tuners in car radios
BF861A
SOT23
25
10
2
6.5
0.2
1.0
BF861B
SOT23
25
10
6
15
0.5
1.5
BF861C
SOT23
25
10
12
25
0.8
2
BF862
SOT23
20
10
10
25
0.3 2
RF stages FM portables, car radios, main radios & mixer stages
BF5101)
SOT23
20
10
0.7
3
typ. 0.8
BF5111)
SOT23
20
10
2.5
7
typ. 1.5
BF5121)
SOT23
20
10
6
12
typ. 2.2
BF5131)
SOT23
20
10
10
18
typ. 3
Low-level general purpose amplifiers
BFR30
SOT23
25
5
4
10
<5
BFR31
SOT23
25
5
1
5
<2.5
General-purpose amplifiers
BFT46
SOT23
25
5
0.2
1.5
<1.2
AM input stages UHF/VHF amplifiers
PMBFJ308
SOT23
25
50
12
60
1
6.5
PMBFJ309
SOT23
25
50
12
30
1
4
PMBFJ310
SOT23
25
50
24
60
2
6.5
PMBFJ620
SOT363
25
50
24
60
2
6.5
Crs
(pF)
min
max
3
6.5
3
6.5
3
6.5
3
6.5
3
6.5
3
6.5
4.5 4.5 4.5 -
Typ.=1.1
Typ.=1.1
Typ.=1.1
0.8
0.8
0.8
0.8
0.8
0.8
-
12
16
20
35
2.1
2.1
2.1
typ=1.9
2.7
2.7
2.7
-
0.4
0.4
0.4
0.4
0.5
0.5
0.5
0.5
1.5
1.5
-
>1
1.5
-
>10
>10
>10
10
1.3
1.3
1.3
1.3
2.5
2.5
2.5
2.5
20
25
30
2.5
4
6
7
1
1.5
4
4.5
Bold= Highly recommended product
1)
Asymmetrical
NXP Semiconductors RF Manual 10th edition
41
2.5.2 MOSFETs Why choose NXP Semiconductors’ MOSFETs:
• Reference designs for TV tuning
• Short leadtimes
• Broad portfolio
• Smallest packages
• 2-in-1 FETs for tuner applications
• Reliable volume supply
• Best performance MOSFETs for TV tuning
N-channel, single MOSFETs for switching
Type
Package
BSS83
SOT143
Silicon RF Switches
BF1107
SOT23
BF11085)
SOT143B
BF1108R5)
SOT143R
VDS
(V)
max
10
ID
(mA)
max
50
3 3 3 10 10
10
I DSS
(mA)
min
max
-
1003)
1003)
1003)
V (p)GS
(V)
min
max
0.12)
21)
-
74)
74)
74)
R DSON
(Ω)
max
45
20
20
20
CHARACTERISTICS Crs
t on
(pF)
(ns)
min
max
typ
max
typ.0.6
1
-
-
-
t off
(ns)
-
typ
-
max
5
|S21(on) |2
(dB)
max
-
-
-
2.5
3 3 Bold= Highly recommended product
N-channel, dual-gate MOSFETs
Type
Package
With external bias
BF908
SOT143
BF908R
SOT143R
BF908WR
SOT343R
BF991
SOT143
BF992
SOT143
BF994S
SOT143
BF996S
SOT143
BF998
SOT143
BF998R
SOT143R
BF998WR
SOT343R
Fully internal bias
BF1105
SOT143
BF1105R
SOT143R
BF1105WR
SOT343R
BF1109
SOT143
BF1109R
SOT143R
BF1109WR
SOT343R
Partly internal bias
BF904(A)
SOT143
BF904(A)R
SOT143R
BF904(A)WR SOT343R
BF909(A)
SOT143
BF909(A)R
SOT143R
BF909(A)WR SOT343R
3)
4)
5)
1)
2)
42
VDS
ID
I DSX
(mA)
min
max
V (th)gs
(V)
min
max
CHARACTERISTICS |Yfs|
Cis
Cos
(mS)
(pF)
(pF)
min
max
typ
typ
F @ 800 MHz
(dB)
typ
VHF
UHF
1.7
1.7
1.7
1.1
2
1
0.8
1.05
1.05
1.05
1.5
1.5
1.5
1
1.27)
17)
1.8
1
1
1
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
2.2 9)
2.2 9)
2.2 9)
2.2 9)
2.2 9)
2.2 9)
1.28)
1.28)
1.28)
1.3 8)
1.3 8)
1.3 8)
1.7
1.7
1.7
1.5
1.5
1.5
X
X
X
X
X
X
X
X
X
X
X
X
2.2
2.2
2.2
3.6
3.6
3.6
1.3
1.3
1.3
2.3
2.3
2.3
2
2
2
2
2
2
X
X
X
X
X
X
X
X
X
X
X
X
(V)
max
(mA)
max
12
12
12
20
20
20
20
12
12
12
40
40
40
20
40
30
30
30
30
30
3
3
3
4
4
4
2
2
2
27
27
27
25
20
20
18
18
18
-
-2
-2
-2
-2.5
-1.3
-2.5
-2.5
-2.0
-2.0
-2.5
36
36
36
10
20
15
15
21
21
22
50
50
50
-
3.1
3.1
3.1
2.1
4
2.5
2.3
2.1
2.1
2.1
7
7
7
11
11
11
30
30
30
30
30
30
8
8
8
8
8
8
16
16
16
16
16
16
0.3
0.3
0.3
0.3
0.3
0.3
1.26)
1.26)
1.26)
1.26)
1.26)
1.26)
25
25
25
24
24
24
-
7
7
7
7
7
7
30
30
30
40
40
40
8
8
8
12
12
12
13
13
13
20
20
20
0.3
0.3
0.3
0.3
0.3
0.3
16)
16)
16)
16)
16)
16)
22
22
22
36
36
36
30
30
30
50
50
50
Asymmetrical VGS(th) ID VSG Depletion FET plus diode in one package
NXP Semiconductors RF Manual 10th edition
8)
9)
6)
7)
VGS (th)
@ 200 MHz
C OSS
C ig
|S21(off) |2
(dB)
min
-
MODE
30
30
30
depl.
depl.
depl.
enh.
N-channel, dual-gate MOSFETs
Type
Package
Partly internal bias
BF1100
SOT143
BF1100R
SOT143R
BF1100WR
SOT343R
BF1101
SOT143
BF1101R
SOT143R
BF1101WR
SOT343R
BF1102(R)10)
SOT363
BF1201
SOT143
BF1201R
SOT143R
BF1201WR
SOT343R
BF1202
SOT143
BF1202R
SOT143R
BF1202WR
SOT343R
BF120311)
SOT363
BF120410)
BF1205C11)12)13)
SOT363
SOT363
BF120511)12)13)
SOT363
BF1206
SOT363
11)
BF1206F11)
SOT666
11)13)14)
BF1207
SOT363
BF120811)12)13)
SOT666
BF1208D
SOT666
BF121011)12)
SOT363
BF1212
SOT363
11)12)13)
11)12)
BF1211
BF1211R
BF1211WR
BF1212
BF1212R
BF1212WR
BF121410)
SOT143
SOT143R
SOT343
SOT143
SOT143R
SOT343
SOT363
VDS
ID
(V)
max
(mA)
max
14
14
14
7
7
7
7
10
10
10
10
10
10
10
10
10
6
6
10
7
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
30
30
30
30
30
30
40
301)
301)
301)
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
I DSX
(mA)
min
max
8
8
8
8
8
8
12
11
11
11
8
8
8
11
8
8
14
9
8
8
14
9
3
3
13
9
14
9
14
10
14
9
14
9
11
11
11
8
8
8
13
13
13
13
16
16
16
20
19
19
19
16
16
16
19
16
16
24
17
16
16
23
17
6.5
6.5
23
19
24
17
24
20
24
17
24
17
19
19
19
16
16
16
23
V (th)gs
(V)
min
max
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
1.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
1.26)
1.26)
1.26)
16)
16)
16)
1.26)
1.26)
1.26)
1.26)
1.26)
1.26)
1.26)
1.26)
1.2
1.26)
1
1
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1
1
1
1
1
1
1
1
1.0
1.0
1.0
1.0
1.0
1.0
1.0
CHARACTERISTICS |Yfs|
Cis
Cos
(mS)
(pF)
(pF)
min
max
typ
typ
24
24
24
25
25
25
36
23
23
23
25
25
25
23
25
25
26
28
26
26
33
29
17
17
25
26
26
28
26
25
26
28
26
28
25
25
25
28
28
28
25
33
33
33
35
35
35
40
40
40
35
40
40
41
43
40
40
48
44
32
32
40
41
41
43
41
40
41
43
41
48
40
40
40
43
43
43
35
2.2
2.2
2.2
2.2
2.2
2.2
2.89)
2.6
2.6
2.6
1.7
1.7
1.7
2.6
1.7
1.7
2.2
2
1.8
2.0
2.4
1.7
2.4
1.7
2.2
1.8
2.2
2
2.1
2.1
2.2
2
2.2
2
2.1
2.1
2.1
1.7
1.7
1.7
2.2
1.4
1.4
1.4
1.28)
1.28)
1.28)
1.6 8)
0.9
0.9
0.9
0.85
0.85
0.85
0.9
0.85
0.85
0.9
0.85
0.75
0.85
1.1
0.85
1.1
0.85
0.9
0.8
0.9
0.85
0.8
0.85
0.9
0.85
0.9
0.85
0.9
0.9
0.9
0.9
0.9
0.9
0.9
F @ 800 MHz
(dB)
typ
VHF
UHF
2
2
2
1.7
1.7
1.7
2
1.9
1.9
1.9
1.1
1.1
1.1
1.9
1.1
1.1
1.4
1.4
1.2
1.4
1.6
1.4
1.1
1.0
1.4
1.4
1.4
1.4
1.1
1.4
1.4
1.4
1.4
1.4
1.3
1.3
1.3
1.1
1.1
1.1
1.4
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
Red = New
Bold= Highly recommended product
Bold Red = New, highly recommended product
1)
3)
4)
5)
7)
8)
2)
Asymmetrcal
VGS(th) I D
VSG Depletion FET plus diode in one package @200 MHz C OSS C ig
Two equal dual gate MOSFETs in one package
11)
Two low noise gain amplifiers in one package
12)
Transistor A: fully internal bias, transistor B: partly internal bias
13)
Internal switching function
14)
Transistor A: partly internal bias, transistor B: fully internal bias
9)
10)
NXP Semiconductors RF Manual 10th edition
43
2.6 RF Modules NXP RF CATV-HFC modules:
http://www.nxp.com/catv
infrastructure networks deployed in India. Both families will be
extended in the following months to cover most of those two
specific market segments.
Why choose NXP Semiconductors’ RF Modules:
• Excellent linearity, stability and reliability
• Rugged construction
• Extremely low noise
• High power gain
• Low total cost of ownership
CATV types for Chinese (C-types) and
Indian market (OM-types)
New in our CATV Hybrid portfolio are two families of products.
The C types are specially designed for the Chinese market,
fitting two major governmental projects. And the OM types,
also called the INDI types, are designed for low-end CATV
C types (China)
• CATV push pulls, chapter 2.6.2 :
BGY588C and BGE788C
• CATV power doublers, chapter 2.6.3 :
BGD712C
• CATV optical receivers, chapter 2.6.4 :
BGO807C
OM types (India)
• CATV push pulls, chapter 2.6.2 :
OM7650 and OM7670
2.6.1 CATV Reverse Hybrids
Frequency
range
5 -65 MHz
5 -75 MHz
5 -120 MHz
5 -200 MHz
Type number
BGS67A
BGY68
BGY66B
BGY67
BGY67A
Gain
(dB)
25 - 26
29.2 - 30.8
24.5 - 25.5
21.5 - 22.5
23.5 - 24.5
Slope
(dB)
-0.1 - 0.6
-0.2 - 0.5
-0.2 - 0.5
-0.2 - 0.5
-0.2 - 0.5
FL
RL IN /RL OUT
CTB
XMOD
CSO
@ Ch
± 0.2
± 0.2
± 0.2
± 0.2
± 0.2
20/20
20/20
20/20
20/20
20/20
-64
-68
-66
-67
-67
-54
-60
-54
-60
-59
-
4
4
14
22
22
FL
RL IN /RL OUT
CTB
XMOD
CSO
@ Ch
± 0.5
± 0.2
± 0.2
± 0.4
± 0.4
± 0.2
± 0.2
± 0.3
± 0.6
± 0.5
± 0.5
± 0.5
± 0.3
± 0.5
± 0.3
± 0.3
± 0.3
± 0.5
± 0.5
± 0.5
± 0.6
± 0.5
± 0.5
± 0.3
10/10
16/16
20/20
20/20
20/20
20/20
20/20
20/20
10/8
20/20
16/16
20/20
20/20
20/20
20/20
14/14
20/20
20/20
20/20
20/21
24/23
20/20
21/21
20/20
20/20
20/20
-45
-57
-59
-57
-57
-57
-55
-54
-43
-53
-49
-53
-50
-49
-61
-61
-55
-62
-57.5
-68
-60
-60
-60
-53
-62
-58
-60
-59
-60
-54
-56
-52
-54
-51
-61
-61
-61
-56
-51
-59
-60
-59
-54
-57
-62
-59
-54
-57
-62
-56
-52
-54
-53
-52
-53
-56
-52
-61
-61
-57
-59
-58
-66
-55
-60
-55
-56
77
77
77
77
77
77
85
85
110
110
110
110
110
110
49
129
129
49
129
129
132
112
49
49
49
150
@ Vo
(dBmV)
50
50
48
50
50
F @ fmax
@ Vo
(dBmV)
44
44
44
44
44
44
44
44
44
44
44
44
44
44
44
59
59
44
40
40
44
44
44
44
44
44
F @ fmax
3.5
3.5
5
5.5
5.5
Itot
(mA)
85
135
135
230
230
2.6.2 CATV Push-Pulls Frequency
range
40 - 550 MHz
40 - 600 MHz
40 - 750 MHz
40 - 870 MHz
40 -1000 MHz
Type number
OM7650
BGY588C
BGY585A
BGY587
BGY587B
BGY588N
BGY685A
BGY687
OM7670
BGY785A
BGE788C
BGY787
BGE787B
BGE788
BGY883
BGE885
BGX885N
BGY885A
BGY887
CGY887A
CGY887B
CGY888C
BGY835C
BGY887B
BGY888
BGY1085A
Gain
(dB)
33.2 - 35.5
33.2 - 35.5
17.7 - 18.7
21.5 - 22.5
26.2 - 27.8
33.5 - 35.5
17.7 - 18.7
21 - 22
33.2 - 35.2
18 - 19
33.2 - 35.2
21 - 22
28.5 - 29.5
33.5 - 34.5
14.5 - 15.5
16.5 - 17.5
16.5 - 17.5
18 - 19
21 - 22
25.2 - 25.8
27.2 - 27.8
34.5 - 36.5
33.5 - 34.5
28.5 - 29.5
33.5 - 34.5
18 - 19
Bold Red = New, highly recommended product
44
NXP Semiconductors RF Manual 10th edition
Slope
(dB)
0.2 - 2
0.2 - 1.7
0.5 - 2
0.2 - 1.5
0.5 - 2.5
0.5 - 1.5
0.5 - 2.2
0.8 - 2.2
1/4
0-2
0.3 - 2.3
0 - 1.5
0.2 - 2.2
0.5 - 2.5
0-2
0.2 - 1.2
0.2 - 1.4
0-2
0.2 - 2
0.5 - 1.4
0.5 - 1.5
0.5 - 2.5
0.5 - 2.5
0.5 - 2.5
0.5 - 2.5
0-2
8
8
8
7
6.5
6
8.5
6.5
8
7
8
6.5
7
7
8.5
8
8
8
6.5
5
5
4.0
7.0
6.5
7
7.5
Itot
(mA)
340
345
240
240
340
340
240
240
340
240
325
240
320
320
235
240
240
240
235
240
310
280
340
340
340
240
2.6.3 CATV power doublers Frequency
range
40 - 550 MHz
Type number
BGD502
BGD702
BGD702N
BGD712
40 -750 MHz
BGD712C
BGD704
BGD714
BGD885
BGD802
BGD812
BGD902
BGD902L
CGD923
40 - 870 MHz BGD804
BGD814
BGD904
BGD904L
CGD914
BGD816L
BGD906
CGD944C
40 -870 MHz
CGD942C
CGD1042
CGD1044
40 - 1000 MHz
CGD1042H
CGD1044H
Gain
(dB)
18 - 19
18 - 19
18 - 19
18.2 - 18.8
18.2 - 18.8
19.5 - 20.5
20 - 20.6
16.5 - 17.5
18 - 19
18.2 - 18.8
18.2 - 18.8
18 - 19
19.25 - 19.75
19.5 - 20.5
19.7 - 20.3
19.7 - 20.3
19.7 - 20.3
19.75 - 20.25
21.2 - 21.8
21.2 - 21.8
23 - 25
20.5 - 22.5
20.5 - 22.5
22.5 - 24.5
20.5 - 22.5
22.5 - 24.5
Slope
(dB)
0.2 - 2.2
0.2 - 2
0.2 - 2
0.5 - 1.5
0.5 - 1.5
0-2
0.5 - 1.5
0.2 - 1.6
0.2 - 2
0.4 - 1.4
0.4 - 1.4
0.4 - 1.4
0-1
0.2 - 2
0.4 - 1.4
0.4 - 1.4
0.4 - 1.4
0.2 - 1.5
0.5 - 1.5
0.5 - 1.5
1-2
1-2
1.5 - 2.5
1.5 - 2.5
0-1
0-1
FL
RL IN /RL OUT
CTB
XMOD
CSO
@ Ch
± 0.3
± 0.5
± 0.25
± 0.35
± 0.4
± 0.5
± 0.35
± 0.5
± 0.5
± 0.5
± 0.3
± 0.3
± 0.6
± 0.5
± 0.5
± 0.3
± 0.3
± 0.45
± 0.5
± 0.35
± 0.5
± 0.5
± 0.3
± 0.3
± 0.3
± 0.3
20/20
20/20
20/20
23/23
17/17
20/20
23/23
20/20
20/20
23/23
21/25
21/21
20/20
20/20
22/25
21/25
21/25
20/21
22/25
22/22
18/18
18/18
17/17
17/17
14/17
14/17
-65
-58
-58
-62
-62
-57
-61
-54
-58
-58
-56
-56
-53
-57.5
-57.5
-55
-59.5
-55
-57
-66
-66
-68
-68
-65
-65
-68
-62
-62
-63
-61
-62
-59
-62
-62
-60
-57
-61
-62
-61
-59
-64
-58
-60
-58
-58
-64
-64
-65
-65
-62
-58
-58
-63
-63
-56
-62
-56
-60
-58
-59
-54
-54
-59
-58
-59
-50
-56
-54
-68
-68
-68
-68
-65
-65
77
110
110
112
112
110
112
129
129
132
129
129
132
129
132
129
129
132
129
129
132
132
79
79
79 + 75*
79 + 75*
@ Vo
(dBmV)
44
44
44
44
44
44
44
59
44
44
44
44
48
44
44
44
44
44
44
44
48
48
56.9
56.9
59
59
F @ fmax
8
8.5
8.5
7
7
8.5
7
8
9
7.5
8
7.5
5.5
7.5
7.5
7.5
7.5
4
7.5
7.5
5.0
5.0
5.0
5.0
7.0
7.0
Itot
(mA)
435
435
435
410
410
435
410
450
410
410
435
380
475
410
410
435
380
375
375
435
450
450
450
450
450
450
Bold
= Highly recommended product
Bold Red = New, highly recommended product
*
= digital channels
2.6.4 CATV optical receivers
Frequency
Type number
range
Forward Path Receiver
BGO807
BGO807C
BGO807/FC0
40 - 870
BGO807/SC0
BGO827
BGO827/SC0
Rmin
(V/W)
Slope
(dB)
FL
S22
(dB)
d3
d2
@fm
(MHz)
@Pi
(mW)
F @ fmax
800
800
750
750
800
750
0 -2
0 -2
0 -2
0 -2
0-2
0-2
1
1
1
1
1
1
11
11
11
11
11
11
-71
-71
-71
-71
-73
-73
-55
-54
-55
-55
-57
-57
854.5
854.4
854.5
854.5
854.5
854.5
1
1
1
1
1
1
8.5
8.5
8.5
8.5
8.5
8.5
Conn.
FC
SC
SC
Itot
(mA)
205
205
205
205
205
205
Bold= Highly recommended product
* NOTES: This table is for reference only. For full data please refer to the latest datasheet. For availability please check the NXP Sales office.
Description
Frequency range: minimum and maximum frequency in MHz
at which data are characterized @Ch/@Vo. The number of
channels and the output voltage at which CTB, XM, CSO and
d2 are characterized @fm. Measurement frequency is F. Noise
Figure is in dB or Noise in pA/Sqrt(Hz). FL is Flatness Rmin is
Minimum responsivity of optical receivers.
NXP Semiconductors RF Manual 10th edition
45
2.7 Fiber-optic transceiver ICs NXP Optical Networking
http://www.nxp.com/opticalnetworking
Why choose NXP Semiconductors’ Fiber Optic Transceivers:
• Reliable supplier
• Easy to design in
• Robust products
2.7.1 Laser drivers Part number
TZA3047A
TZA3047B
TZA3050
Data-rate
Package type
Bare die
Imod/IBias
Dual loop
Input
Vcc
30-1250
30-1250
30-1250
Mb/s
SOT560-1
SOT560-1
SOT560-1
X
X
X
[mA]
100-100
100-100
100-100
X
X
-
CML/PECL
CML/PECL
CML/PECL
3.3
3.31)
3.31)
Power
dissipation
mW
420
420
420
2.7.2 Transimpedance amplifiers Part number
TZA3036
TZA3026
TZA3046
TZA3013
Data-rate
Package type
Bare die
In
Eq Sens RSSI
Output
Vcc
0-155
0-622
0-1250
0-2488
Mb/s
die only
die only
die only
die only
X
X
X
X
[nA]
10
67
130
450
[dBm]
-40
-32
-29
-24
Yes
Yes
Yes
-
50 Ohm
50 Ohm
50 Ohm
50 Ohm
3.3
3.3
3.3
3.3
Bold= highly recommended product
*)
46
NOTES: All figures given are typical at 25 deg C
Power dissipation is given for Vcc = 3.3 V
Eq. sensitivity conditions: Calculated from noise figure using a lowpass bandwidth filter at 0.7x bit rate and a source with an extinction ratio of 10% and a photodiode responsivity of 0.9A/W. 3.31) means that the output stage is capable of driving 5 V laser applications.
NXP Semiconductors RF Manual 10th edition
Power
dissipation
mW
50
60
70
86
Whatifyoucouldlowertotalcostof
ownershipforyoursatellitesolutions?
LookatTFF1004HNforsatelliteLNB,chapter5.2
NXPSemiconductorsRFManual10thedition
4
3. Design-in tools
This chapter will make it easier to find and get hold of design-in information and materials,
with web links or references to the NXP representative / authorized distributor.
3.1 S-Parameters
3.2 Spice models S-Parameters help you to simulate the behaviour of our devices
to your specific adjustments for e.g. voltage, current.
Spice models help you to create the optimal performance
and to understand which external components have a certain
influence on that performance.
Wideband transistors, FETs & MMICs
First, click on the type number, which takes you directly
to the corresponding product information page on the
NXP Semiconductors internet.
Second, scroll down on this product information page
to find the S-Parameters.
Wideband transistors, FETs & Varicaps diodes
First, click on the type number which takes you directly
to the corresponding product information page on the
NXP Semiconductors internet.
Second, scroll down on this product information page
to find the Spice models.
BF67
BFG135
BFG198
BFG21W
BFG25A/X
BFG31
BFG35
BFG310/XR
BFG310W/XR
BFG325/XR
BFG325W/XR
BFG403W
BFG410W
BFG424F
BFG424W
BFG425W
Wideband transistors
BFG480W
BFQ19
BFG505
BFQ67
BFG520
BFQ67W
BFG520W
BFR106
BFG540
BFR505
BFG540W
BFR520
BFG541
BFR540
BFG590
BFR92A
BFG591
BFR92AW
BFG93A
BFR93A
BFG94
BFR93AW
BFG97
BFS17
BFM505
BFS17A
BFM520
BFS17W
BFQ149
BFS25A
BFQ18A
BFS505
BF1211
BF1211R
BF1211WR
FETs
BF1212
BF1212R
BF1212WR
BGA2001
BGA2003
BGA2711
BGA2748
BGA2771
BGA2776
BGA2709
MMICs
BGA2712
BGM1011
BGM1012
BGM1013
BGM1014
BGM2011
BGA2715
48
BF511
BF513
BF862
BGA2716
BGA2717
BGA2011
BGA2012
BGA6289
BGA6489
BGA6589
NXP Semiconductors RF Manual 10th edition
BFS520
BFS540
BFT25
BFT25A
BFT92
BFT92W
BFT93
BFT93W
BRF505T
PBR941
PBR951
PRF947
PRF949
PRF957
BFG10
BFG10/X
BFG10W/X
BFG135
BFG198
BFG21W
BFG25A/X
BFG25AW/X
BFG31
BFG310/XR
BFG310W/XR
BFG325/XR
BFG325W/XR
BFG35
BFG403W
BFG410W
BFG424F
BFG424W
BFG425W
BFG480W
Wideband transistors
BFG505
BFG92A/X
BFG505/X
BFG93A
BFG505W/X
BFG94
BFG520
BFG97
BFG520/X
BFM505
BFG520/XR
BFM520
BFG520W
BFQ149
BFG520W/X
BFQ18A
BFG540
BFQ19
BFG540/X
BFQ540
BFG540/XR
BFQ67
BFG540W
BFQ67W
BFG540W/X
BFR106
BFG540W/XR
BFR505
BFG541
BFR505T
BFG590
BFR520
BFG590/X
BFR540
BFG591
BFR92A
BFG67
BFR92AW
BFG67/X
BFR93A
BF862
BF904
BF908
BB145B
BB149
BB149A
BB156
BB179
BB179B
FETs
BF909
Varicap diodes
BB201
BB202
BB207
BFR93AW
BFS17
BFS17A
BFS17W
BFS25A
BFS505
BFS520
BFS540
BFT25A
BFT92
BFT92W
BFT93
BFT93W
PBR941
PBR951
PRF947
PRF949
PRF957
BF998
BB208-02
3.3 Application notes
http://www.nxp.com/products/all_appnotes/
For the application notes we refer you to chapter 1 of this
manual. For each application, we have given the recommended
application notes which are available on the internet (with
interactive link) or via your local NXP representative or authorized
distributor (look at the last chapter: Web Links and Contacts).
3.4 Demo boards
3.4.1 MMIC and SiGeC transistor demo boards
MMIC demo boards are available (although limited) via your
local NXP representative or authorized distributor (look at the
last chapter:Web Links and Contacts).
BFU725F
BGA2001
BGA2003
BGA2011
BGA2012
BGA2031
BGA2709
BGA2711
BGA2712
BGA2714
BGA2715
BGA2716
BGA2748
BGA2771
BGA2776
BGA6289
BGA6489
BGA6589
BGM1011
BGM1012
BGM1013
BGM1014
NXP Semiconductors RF Manual 10th edition
49
3.5 Samples of products in development
For development samples, please ask your local NXP
representative or authorized distributor (see last chapter:
Web Links and Contacts) to order the latest versions at the RF
development team.
3.6 Samples of released products
For all released products, samples are available in the sample
warehouse. Look on the home page of the NXP web site for the
link to the online sample store: www.nxp.com
3.7 Datasheets
For all released products, datasheets are available on the NXP
Semiconductors internet. Simply ‘clicking’ on a product type
(in this manual chapter 1 or 2) takes you to the corresponding
product information page on the NXP Semiconductors website.
3.8 Design-in support
If you need special design-in support from our design-in
engineers, please ask your local NXP representative or
authorized distributor (see last chapter: Web Links and Contacts),
to pass on your request to the RF development team.
50
NXP Semiconductors RF Manual 10th edition
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NXPSemiconductorsRFManual10thedition
51
4. Cross-references & replacements
NXP cross-references:
http://www.nxp.com/search/index.html
NXP end-of-life:
http://www.nxp.com/products/eol/
4.1 Cross-references: Manufacturer types versus NXP types
In alphabetical order of manufacturer type
Abbreviations:
BS diode Band Switch Diode
CATV PD CATV Power Doubler
CATV PPA CATV Push Pull Amplifier
CATV PPA/HG CATV Push Pull Amplifier High Gain
CATV RA CATV Reverse Amplifier
FET Field Effect Transistor
IS Industry Standard
MMIC Monolithic Microwave Integrated Circuit
Varicap Varicap Diode
WB trs 1-4 Wideband Transistor 1-4 generation
WB trs 5-7 Wideband Transistor 5-7 generation
Manufacturer
type
1SS314
1SS356
1SS381
1SS390
1SV172
1SV214
1SV214
1SV215
1SV228
1SV231
1SV232
1SV233
1SV234
1SV239
1SV241
1SV246
1SV247
1SV248
1SV249
1SV250
1SV251
1SV252
1SV254
1SV263
1SV264
1SV266
1SV267
1SV269
1SV270
1SV271
52
Manufacturer
NXP type
Product family
Toshiba
Rohm
Toshiba
Rohm
Toshiba
Toshiba
Toshiba
Toshiba
Toshiba
Toshiba
Toshiba
Sanyo
Sanyo
Toshiba
Sanyo
Sanyo
Sanyo
Sanyo
Sanyo
Sanyo
Sanyo
Toshiba
Toshiba
Sanyo
Sanyo
Sanyo
Sanyo
Toshiba
Toshiba
Toshiba
BA591
BA591
BA277
BA891
BAP50-04
BB149
BB149A
BB153
BB201
BB152
BB148
BAP70-03
BAP64-04
BB145B
BAP64-02
BAP64-04W
BAP70-02
BAP50-02
BAP50-04W
BAP50-03
BAP50-04
BAP50-04W
BB179
BAP50-02
BAP50-04W
BAP50-03
BAP50-04
BB148
BB156
BAP50-03
BS diode
BS diode
BS diode
BS diode
PIN diode
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
PIN diode
PIN diode
Varicap
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
Varicap
PIN diode
PIN diode
PIN diode
PIN diode
Varicap
Varicap
PIN diode
NXP Semiconductors RF Manual 10th edition
Manufacturer
type
1SV278
1SV279
1SV282
1SV282
1SV282
1SV283
1SV283
1SV283
1SV283
1SV284
1SV288
1SV290
1SV294
1SV305
1SV307
1SV308
1T362
1T362 A
1T363 A
1T368 A
1T369
1T379
1T397
1T399
1T402
1T402
1T403
1T403
1T404A
1T405 A
Manufacturer
NXP type
Product family
Toshiba
Toshiba
Toshiba
Toshiba
Toshiba
Toshiba
Toshiba
Toshiba
Toshiba
Toshiba
Toshiba
Toshiba
Sanyo
Toshiba
Toshiba
Toshiba
Sony
Sony
Sony
Sony
Sony
Sony
Sony
Sony
Sony
Sony
Sony
Sony
Sony
Sony
BB179
BB179
BB178
BB178
BB187
BB187
BB178
BB178
BB187
BB156
BB152
BB182
BAP70-03
BB202
BAP51-03
BAP51-02
BB149
BB149A
BB153
BB148
BB152
BB131
BB152
BB148
BB179B
BB179B
BB178
BB178
BB187
BB187
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
PIN diode
Varicap
PIN diode
PIN diode
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Manufacturer
type
1T406
1T408
2N3330
2N3331
2N4220
2N4856
2N4857
2N4858
2N5114
2N5115
2N5116
2N5432
2N5433
2N5434
2N5457
2N5458
2N5459
2N5653
2N5654
2SC4094
2SC4095
2SC4182
2SC4184
2SC4185
2SC4186
2SC4226
2SC4227
2SC4228
2SC4247
2SC4248
2SC4315
2SC4320
2SC4321
2SC4325
2SC4394
2SC4536
2SC4537
2SC4592
2SC4593
2SC4703
2SC4784
2SC4807
2SC4842
2SC4899
2SC4900
2SC4901
2SC4988
2SC5011
2SC5012
2SC5065
2SC5085
2SC5087
2SC5088
2SC5090
2SC5092
2SC5095
2SC5107
2SC5463
2SC5593
2SC5594
2SC5623
2SC5624
2SC5631
2SJ105GR
2SK163-K
2SK163-L
2SK163-M
2SK163-N
2SK210BL
2SK370BL
2SK370GR
2SK370V
2SK381
2SK43
Manufacturer
NXP type
Product family
Sony
Sony
IS
IS
IS
IS
IS
IS
IS
IS
IS
IS
IS
IS
IS
IS
IS
IS
IS
NEC
NEC
NEC
NEC
NEC
NEC
NEC
NEC
NEC
Toshiba
Toshiba
Toshiba
Toshiba
Toshiba
Toshiba
Toshiba
NEC
Renesas
Renesas
Renesas
NEC
Renesas
Renesas
Toshiba
Renesas
Renesas
Renesas
Renesas
NEC
NEC
Toshiba
Toshiba
Toshiba
Toshiba
Toshiba
Toshiba
Toshiba
Toshiba
Toshiba
Renesas
Renesas
Renesas
Renesas
Renesas
IS
Renesas
Renesas
Renesas
Renesas
Renesas
Renesas
Renesas
Renesas
Renesas
Renesas
BB182
BB187
J176
J176
BF245A
BSR56
BSR57
BSR58
J174
J175
J175
J108
J108
J109
BF245A
BF245A
BF245B
J112
J111
BFG520/XR
BFG520/XR
BFS17W
BFS17W
BFS17W
BFR92AW
PRF957
BFQ67W
BFS505
BFR92AW
BFR92AW
BFG520/XR
BFG520/XR
BFQ67W
BFS505
PRF957
BFQ19
BFR93AW
BFG520/XR
BFS520
BFQ19
BFS505
BFQ18A
BFG540W/XR
BFS505
BFG520/XR
BFS520
BFQ540
BFG540W/XR
BFG540W/XR
PRF957
PRF957
BFG520/XR
BFG540W/XR
BFS520
BFG520/XR
BFS505
BFS505
BFQ67W
BFG410W
BFG425W
BFG410W
BFG425W
BFQ540
J177
J113
J113
J113
J113
PMBFJ309
J109
J109
J109
J113
J113
Varicap
Varicap
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 5-7
WB trs 5-7
WB trs 5-7
WB trs 5-7
WB trs 1-4
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
Manufacturer
type
2SK435
2SK508
3SK290
BA592
BA592
BA595
BA597
BA885
BA892
BA892
BA895
BAR14-1
BAR15-1
BAR16-1
BAR17
BAR60
BAR61
BAR63
BAR63-02L
BAR63-02V
BAR63-02W
BAR63-03W
BAR63-05
BAR63-05W
BAR64-02V
BAR64-02W
BAR64-03W
BAR64-04
BAR64-04W
BAR64-05
BAR64-05W
BAR64-06
BAR64-06W
BAR65-02V
BAR65-02W
BAR65-03W
BAR66
BAR67-02W
BAR67-03W
BB304C
BB304M
BB305C
BB305M
BB403M
BB501C
BB501M
BB502C
BB502M
BB503C
BB503M
BB535
BB545
BB555
BB555
BB565
BB601M
BB639
BB639
BB640
BB641
BB659
BB659
BB664
BB664
BB664
BB669
BB814
BB831
BB833
BB835
BBY58-02V
BBY65
BF1005S
BF1009S
Manufacturer
NXP type
Product family
Renesas
Renesas
Renesas
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Renesas
Renesas
Renesas
Renesas
Renesas
Renesas
Renesas
Renesas
Renesas
Renesas
Renesas
Infineon
Infineon
Infineon
Infineon
Infineon
Renesas
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
J113
PMBFJ308
BF998WR
BA591
BA591
BAP70-03
BAP70-03
BAP70-03
BA891
BA891
BAP70-02
BAP70-03
BAP70-03
BAP70-03
BAP50-03
BAP50-03
BAP50-03
BAP63-03
BAP63-02
BAP63-02
BAP63-02
BAP63-03
BAP63-05W
BAP63-05W
BAP64-02
BAP64-02
BAP64-03
BAP64-04
BAP64-04W
BAP64-05
BAP64-05W
BAP64-06
BAP64-06W
BAP65-02
BAP65-02
BAP65-03
BAP1321-04
BAP1321-02
BAP1321-03
BF1201WR
BF1201R
BF1201WR
BF1201R
BF909R
BF1202WR
BF1202R
BF1202WR
BF1202R
BF1202WR
BF1202R
BB149
BB149A
BB179B
BB179B
BB179
BF1202
BB148
BB153
BB152
BB152
BB178
BB178
BB187
BB178
BB178
BB152
BB201
BB131
BB131
BB131
BB202
BB202
BF1105
BF1109
FET
FET
FET
BS diode
BS diode
PIN diode
PIN diode
PIN diode
BS diode
BS diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
Varicap
Varicap
Varicap
Varicap
Varicap
FET
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
FET
FET
NXP Semiconductors RF Manual 10th edition
53
Manufacturer
type
BF1009SW
BF2030
BF2030R
BF2030W
BF244A
BF244B
BF244C
BF247A
BF247B
BF247C
BF256A
BF256B
BF256C
BF770A
BF771
BF771W
BF772
BF775
BF775A
BF775W
BF851A
BF851B
BF851C
BF994S
BF996S
BF998
BF998
BF998R
BF998RW
BF998W
BFG135A
BFG193
BFG194
BFG196
BFG19S
BFG235
BFP180
BFP181
BFP182
BFP183
BFP183R
BFP193
BFP193W
BFP196W
BFP280
BFP405
BFP420
BFP450
BFP81
BFP93A
BFQ193
BFQ19S
BFR106
BFR180
BFR180W
BFR181
BFR181W
BFR182
BFR182W
BFR183
BFR183W
BFR193
BFR193W
BFR35AP
BFR92AL
BFR92P
BFR92W
BFR93A
BFR93AL
BFR93AW
BFS17L
BFS17P
BFS17W
BFS481
54
Manufacturer
NXP type
Product family
Infineon
Infineon
Infineon
Infineon
IS
IS
IS
IS
IS
IS
IS
IS
IS
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
IS
IS
IS
Vishay
Vishay
Vishay
Infineon
Vishay
Vishay
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Motorola
Infineon
Infineon
Infineon
Motorola
Infineon
Motorola
Infineon
Infineon
Infineon
BF1109WR
BF1101
BF1101R
BF1101WR
BF245A
BF245B
BF245C
J108
J108
J108
BF245A
BF245B
BF245C
BFR93A
PBR951
BFS540
BFG540
BFR92A
BFR92A
BFR92AW
BF861A
BF861B
BF861C
BF994S
BF996S
BF998
BF998
BF998R
BF998WR
BF998WR
BFG135
BFG198
BFG31
BFG541
BFG97
BFG135
BFG505/X
BFG67/X
BFG67/X
BFG520/X
BFG520/XR
BFG540/X
BFG540W/XR
BFG540W/XR
BFG505/X
BFG410W
BFG425W
BFG480W
BFG92A/X
BFG93A/X
BFQ540
BFQ19
BFR106
BFR505
BFS505
BFR520
BFS520
PBR941
PRF947
PBR951
PRF957
PBR951
PRF957
BFR92A
BFR92A
BFR92A
BFR92AW
BFR93A
BFR93A
BFR93AW
BFS17
BFS17A
BFS17W
BFM505
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 5-7
WB trs 5-7
WB trs 5-7
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
NXP Semiconductors RF Manual 10th edition
Manufacturer
type
BFS483
BFT92
BFT93
BIC701C
BIC701M
BIC702C
BIC702M
BIC801M
BSR111
BSR112
BSR113
BSR174
BSR175
BSR176
BSR177
CA901
CA901A
CA922
CA922A
CMY91
D5540185
D7540185
D7540200
D8640185
D8640250GT
D8640250GTH
D8740180GT
D8740200GT
FSD273TA
FSD273TA
FSD273TA
HBFP0405
HBFP0420
HBFP0450
HSC277
HSMP3800
HSMP3802
HSMP3804
HSMP3810
HSMP3814
HSMP381B
HSMP381C
HSMP381F
HSMP3820
HSMP3822
HSMP3830
HSMP3832
HSMP3833
HSMP3834
HSMP3860
HSMP3862
HSMP3864
HSMP386B
HSMP386E
HSMP386L
HSMP3880
HSMP3890
HSMP3892
HSMP3894
HSMP3895
HSMP389B
HSMP389C
HSMP389F
HVB14S
HVC131
HVC132
HVC200A
HVC200A
HVC202A
HVC202B
HVC300A
HVC300B
HVC306A
HVC306B
Manufacturer
NXP type
Product family
Infineon
Infineon
Infineon
Renesas
Renesas
Renesas
Renesas
Renesas
IS
IS
IS
IS
IS
IS
IS
IS
IS
IS
IS
Infineon
IS
IS
IS
IS
IS
IS
IS
IS
Skyworks
Skyworks
Skyworks
Agilent
Agilent
Agilent
Renesas
Agilent
Agilent
Agilent
Agilent
Agilent
Agilent
Agilent
Agilent
Agilent
Agilent Agilent
Agilent
Agilent
Agilent
Agilent
Agilent
Agilent
Agilent
Agilent
Agilent
Agilent
Agilent
Agilent
Agilent
Agilent
Agilent
Agilent
Agilent
Renesas
Renesas
Renesas
Renesas
Renesas
Renesas
Renesas
Renesas
Renesas
Renesas
Renesas
BFM520
BFT92
BFT93
BF1105WR
BF1105R
BF1105WR
BF1105R
BF1105
PMBFJ111
PMBFJ112
PMBFJ113
PMBFJ174
PMBFJ175
PMBFJ176
PMBFJ177
BGX885N
BGX885N
BGD885
BGD885
BGA2022
BGD502
BGD702
BGD704
BGD802
CGD914
CGD923
CGD923
CGD923
BB148
BB178
BB178
BFG410W
BFG425W
BFG480W
BA277
BAP70-03
BAP50-04
BAP50-05
BAP50-03
BAP50-05
BAP50-03
BAP50-05
BAP64-05W
BAP1321-03
BAP1321-04
BAP64-03
BAP64-04
BAP64-06
BAP64-05
BAP50-03
BAP50-04
BAP50-05
BAP50-02
BAP50-04W
BAP50-05W
BAP51-03
BAP51-03
BAP64-04
BAP64-05
BAP51-02
BAP51-02
BAP64-04
BAP51-05W
BAP50-04W
BAP65-02
BAP51-02
BB178
BB187
BB179
BB179B
BB182
BB182
BB187
BB187
WB trs 1-4
WB trs 1-4
WB trs 1-4
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
CATV PPA
CATV PPA
CATV PD
CATV PD
MMIC
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
Varicap
Varicap
Varicap
WB trs 5-7
WB trs 5-7
WB trs 5-7
BS diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Manufacturer
type
HVC355B
HVC359
HVC363A
HVC363A
HVC376B
HVC376B
HVD132
HVU131
HVU132
HVU202(A)
HVU202(A)
HVU300A
HVU307
HVU315
HVU316
HVU363A
HVU363A
HVU363B
INA-51063
J270
J308
J309
J310
JDP2S01E
JDP2S01U
JDP2S02T
JDP2S04E
KV1835E
MA2S077
MA2S357
MA2S357
MA2S357
MA2S372
MA2S374
MA2SV01
MA357
MA366
MA368
MA372
MA372
MA4CP101A
MA4P274-1141
MA4P275-1141
MA4P275CK-287
MA4P277-1141
MA4P278-287
MA4P789-1141
MA4P789ST-287
MC7712
MC7716
MC7722
MC7726
MC7833
MC7852
MC7862
MC7866
MHW1224
MHW1244
MHW1253LA
MHW1254L
MHW1254LA
MHW1304L
MHW1304LA
MHW1304LAN
MHW1346
MHW1353LA
MHW1354LA
MHW5182A
MHW5185B
MHW5222A
MHW5272A
MHW5342A
MHW5342T
MHW6182
Manufacturer
NXP type
Product family
Renesas
Renesas
Renesas
Renesas
Renesas
Renesas
Renesas
Renesas
Renesas
Renesas
Renesas
Renesas
Renesas
Renesas
Renesas
Renesas
Renesas
Renesas
Agilent
IS
IS
IS
IS
Toshiba
Toshiba
Toshiba
Toshiba
Toko
IS
Matsushita
Matsushita
Matsushita
Matsushita
Matsushita
Renesas
Matsushita
Matsushita
Matsushita
Matsushita
Matsushita
Matsushita
Matsushita
Matsushita
Matsushita
Matsushita
Matsushita
Matsushita
Matsushita
IS
IS
IS
IS
IS
IS
IS
IS
Motorola/Freescale
Motorola/Freescale
Motorola/Freescale
Motorola/Freescale
Motorola/Freescale
Motorola/Freescale
Motorola/Freescale
Motorola/Freescale
Motorola/Freescale
Motorola/Freescale
Motorola/Freescale
Motorola/Freescale
Motorola/Freescale
Motorola/Freescale
Motorola/Freescale
Motorola/Freescale
Motorola/Freescale
Motorola/Freescale
BB145B
BB202
BB178
BB178
BB198
BB202
BAP51-02
BAP65-03
BAP51-03
BB149
BB149A
BB152
BB148
BB148
BB131
BB148
BB153
BB148
BGA2001
J177
J108
J109
J110
BAP65-02
BAP65-03
BAP63-02
BAP50-02
BB199
BA277
BB187
BB178
BB178
BB179
BB182
BB202
BB153
BB148
BB131
BB149
BB149A
BAP65-03
BAP51-03
BAP65-03
BAP65-05
BAP70-03
BAP70-03
BAP1321-03
BAP1321-04
BGY785A
BGY787
BGY785A
BGY787
CGY887A
BGY885A
CGD923
BGD816L
BGY67
BGY67A
BGY67A
BGY68
BGY68
BGY68
BGY68
BGY68
BGY67A
BGY67A
BGY68
BGY585A
BGD502
BGY587
BGY587B
BGY588N
BGY588N
BGY585A
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
PIN diode
PIN diode
PIN diode
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
MMIC
FET
FET
FET
FET
PIN diode
PIN diode
PIN diode
PIN diode
Varicap
BS diode
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
CATV PPA
CATV PPA
CATV PPA
CATV PPA
CATV PPA/HG
CATV PPA
CATV PD
CATV PD
CATV RA
CATV RA
CATV RA
CATV RA
CATV RA
CATV RA
CATV RA
CATV RA
CATV RA
CATV RA
CATV RA
CATV PPA
CATV PD
CATV PPA
CATV PPA/HG
CATV PPA/HG
CATV PPA/HG
CATV PPA
Manufacturer
type
MHW6182-6
MHW6182T
MHW6185B
MHW6185T
MHW6205
MHW6222
MHW6222B
MHW6222T
MHW6272
MHW6272T
MHW6342
MHW6342T
MHW7182B
MHW7182C
MHW7185C
MHW7185C
MHW7185CL
MHW7205C
MHW7205CL
MHW7205CLN
MHW7222
MHW7222A
MHW7222B
MHW7222B
MHW7242A
MHW7272A
MHW7292
MHW7292A
MHW7292AN
MHW7342
MHW8142
MHW8182B
MHW8182C
MHW8185
MHW8185L
MHW8188A
MHW8205
MHW8205L
MHW8207A
MHW8227A
MHW8242A
MHW8247A
MHW8272A
MHW8292
MHW8342
MHW9146
MHW9186
MHW9186A
MHW9182B
MHW9182C
MHW9187
MHW9188
MHW9188A
MHW9189
MHW9189A
MHW9207A
MHW9227A
MHW9236
MHW9242A
MHW9247
MHW9247A
MHW9276
MHWJ5272A
MHWJ7185A
MHWJ7205A
MHWJ7292
MHWJ9182
MMG2001NT1
MMG2001T1
MMBF4391
MMBF4392
MMBF4393
MMBF4860
MMBF5484
Manufacturer
NXP type
Product family
Motorola/Freescale
Motorola/Freescale
Motorola/Freescale
Motorola/Freescale
Motorola/Freescale
Motorola/Freescale
Motorola/Freescale
Motorola/Freescale
Motorola/Freescale
Motorola/Freescale
Motorola/Freescale
Motorola/Freescale
Motorola/Freescale
Motorola/Freescale
Motorola/Freescale
Motorola/Freescale
Motorola/Freescale
Motorola/Freescale
Motorola/Freescale
Motorola/Freescale
Motorola/Freescale
Motorola/Freescale
Motorola/Freescale
Motorola/Freescale
Motorola/Freescale
Motorola/Freescale
Motorola/Freescale
Motorola/Freescale
Motorola/Freescale
Motorola/Freescale
Motorola/Freescale
Motorola/Freescale
Motorola/Freescale
Motorola/Freescale
Motorola/Freescale
Motorola/Freescale
Motorola/Freescale
Motorola/Freescale
Motorola/Freescale
Motorola/Freescale
Motorola/Freescale
Motorola/Freescale
Motorola/Freescale
Motorola/Freescale
Motorola/Freescale
Motorola/Freescale
Motorola/Freescale
Motorola/Freescale
Motorola/Freescale
Motorola/Freescale
Motorola/Freescale
Motorola/Freescale
Motorola/Freescale
Motorola/Freescale
Motorola/Freescale
Motorola/Freescale
Motorola/Freescale
Motorola/Freescale
Motorola/Freescale
Motorola/Freescale
Motorola/Freescale
Motorola/Freescale
Motorola/Freescale
Motorola/Freescale
Motorola/Freescale
Motorola/Freescale
Motorola/Freescale
Motorola/Freescale
Motorola/Freescale
Motorola
Motorola
Motorola
Motorola
Motorola
BGY685A
BGY585A
BGD502
BGD502
BGD704
BGY587
BGY687
BGY587
BGY587B
BGY587B
BGY588N
BGY588N
BGY785A
BGY785A
BGY785A
BGD712
BGD712
BGD714
BGD714
BGD714
BGY787
BGY787
BGY787
BGY787
BGE787B
BGE787B
BGE787B
BGE787B
BGE787B
BGE788
BGY883
BGY885A
BGY885A
BGD902
BGD902L
BGD906
BGD904
BGD904L
BGD906
CGD942C
CGY887A
CGD944C
CGY887B
BGY887B
BGY888
BGY883
BGY885A
BGY885A
BGY1085A
BGY1085A
CGD923
CGD923
BGD904
BGD904
BGD904
BGD906
BGD906
CGY887A
CGD1042
CGD944C
CGD944C
CGY887B
BGY587B
BGD712
BGD714
BGE787B
BGY1085A
BGD816L
BGD816L
PMBF4391
PMBF4392
PMBF4393
PMBFJ112
BFR31
CATV PPA
CATV PPA
CATV PD
CATV PD
CATV PD
CATV PPA
CATV PPA
CATV PPA
CATV PPA
CATV PPA
CATV PPA
CATV PPA
CATV PPA
CATV PPA
CATV PPA
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PPA
CATV PPA
CATV PPA
CATV PPA
CATV PPA/HG
CATV PPA/HG
CATV PPA/HG
CATV PPA/HG
CATV PPA/HG
CATV PPA/HG
CATV PPA
CATV PPA
CATV PPA
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PPA
CATV PPA
CATV PPA
CATV PPA
CATV PPA
CATV PPA
CATV PPA
CATV PPA
CATV PPA
CATV PPA
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PPA/HG
CATV PD
CATV PD
CATV PD
CATV PPA/HG
CATV PPA
CATV PD
CATV PD
CATV PPA/HG
CATV PPA
CATV PD
CATV PD
FET
FET
FET
FET
FET
NXP Semiconductors RF Manual 10th edition
55
Manufacturer
type
MMBFJ113
MMBFJ174
MMBFJ175
MMBFJ176
MMBFJ177
MMBFJ308
MMBFJ309
MMBFJ310
MMBFU310
MMBR5031L
MMBR5179L
MMBR571L
MMBR901L
MMBR911L
MMBR920L
MMBR931L
MMBR941BL
MMBR941L
MMBR951AL
MMBR951L
MMBV105GLT1
MMBV109LT1
MPF102
MPF970
MPF971
MRF577
MRF5811L
MRF917
MRF927
MRF9411L
MRF947
MRF947A
MRF9511L
MRF957
MT4S34U
PRF947B
PZFJ108
PZFJ109
PZFJ110
R0605250L
R0605300L
R2005240
RN142G
RN142S
RN731V
RN739D
RN739F
S505T
S505TR
S505TRW
S5540220
S595T
S595TR
S595TRW
S7540185
S7540215
S8740190
S8740220
S8740230
S949T
S949TR
S949TRW
S974T
S974TR
S974TRW
SMP1302-004
SMP1302-005
SMP1302-011
SMP1302-074
SMP1302-075
SMP1302-079
SMP1304-001
SMP1304-011
SMP1307-001
56
Manufacturer
NXP type
Product family
Motorola
Motorola
Motorola
Motorola
Motorola
Motorola
Motorola
Motorola
Motorola
Motorola
Motorola
Motorola
Motorola
Motorola
Motorola
Motorola
Motorola
Motorola
Motorola
Motorola
ON Semicond.
ON Semicond.
IS
IS
IS
Motorola
Motorola
Motorola
Motorola
Motorola
Motorola
Motorola
Motorola
Motorola
Toshiba
Motorola
IS
IS
IS
IS
IS
IS
Rohm
Rohm
Rohm
Rohm
Rohm
Vishay
Vishay
Vishay
IS
Vishay
Vishay
Vishay
IS
IS
IS
IS
IS
Vishay
Vishay
Vishay
Vishay
Vishay
Vishay
Skyworks Skyworks Skyworks Skyworks Skyworks
Skyworks
Skyworks Skyworks Skyworks PMBFJ113
PMBFJ174
PMBFJ175
PMBFJ176
PMBFJ177
PMBFJ308
PMBFJ309
PMBFJ310
PMBFJ310
BFS17
BFS17A
PBR951
BFR92A
BFR93A
BFR93A
BFT25A
PBR941
PBR941
PBR951
PBR951
BB156
BB148
BF245A
J174
J176
PRF957
BFG93A/X
BFQ67W
BFS25A
BFG520/X
BFS520
PRF947
BFG540/X
PRF957
BFG410W
PRF947
J108
J109
J110
BGY66B
BGY68
BGY67A
BAP1321-03
BAP1321-02
BAP50-03
BAP50-04
BAP50-04W
BF1101
BF1101R
BF1101WR
BGY587
BF1105
BF1105R
BF1105WR
BGY785A
BGY787
BGD812
BGD814
BGD816L
BF1109
BF1109R
BF1109WR
BF1109
BF1109R
BF1109WR
BAP50-05
BAP50-04
BAP50-03
BAP50-05W
BAP50-04W
BAP50-02
BAP70-03
BAP70-03
BAP70-03
FET
FET
FET
FET
FET
FET
FET
FET
FET
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
Varicap
Varicap
FET
FET
FET
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 5-7
WB trs 1-4
FET
FET
FET
CATV RA
CATV RA
CATV RA
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
FET
FET
FET
CATV PPA
FET
FET
FET
CATV PPA
CATV PPA
CATV PD
CATV PD
CATV PD
FET
FET
FET
FET
FET
FET
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
NXP Semiconductors RF Manual 10th edition
Manufacturer
type
SMP1307-011
SMP1320-004
SMP1320-011
SMP1320-074
SMP1321-001
SMP1321-005
SMP1321-011
SMP1321-075
SMP1321-079
SMP1322-004
SMP1322-011
SMP1322-074
SMP1322-079
SMP1340-011
SMP1340-079
SMP1352-011
SMP1352-079
SMV1235-004
SMV1236-004
SST111
SST112
SST113
SST174
SST175
SST176
SST177
SST201
SST202
SST203
SST308
SST309
SST310
SST4391
SST4392
SST4393
SST4856
SST4857
SST4859
SST4860
SST4861
SVC201SPA
TMPF4091
TMPF4092
TMPF4093
TMPF4391
TMPF4392
TMPF4393
TMPFB246A
TMPFB246B
TMPFB246C
TMPFJ111
TMPFJ112
TMPFJ113
TMPFJ174
TMPFJ175
TMPFJ176
TMPFJ177
TSDF54040
uPC2709
uPC2711
uPC2712
uPC2745
uPC2746
uPC2748
uPC2771
uPC8112
Manufacturer
NXP type
Product family
Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks
Skyworks
IS
IS
IS
IS
IS
IS
IS
IS
IS
IS
IS
IS
IS
IS
IS
IS
IS
IS
IS
IS
IS
Sanyo
IS
IS
IS
IS
IS
IS
IS
IS
IS
IS
IS
IS
IS
IS
IS
IS
Vishay
NEC
NEC
NEC
NEC
NEC
NEC
NEC
NEC
BAP70-03
BAP65-05
BAP65-03
BAP65-05W
BAP1321-03
BAP1321-04
BAP1321-03
BAP1321-04
BAP1321-02
BAP65-05
BAP65-03
BAP65-05W
BAP65-02
BAP63-03
BAP63-02
BAP64-03
BAP64-02
BB181
BB156
PMBFJ111
PMBFJ112
PMBFJ113
PMBFJ174
PMBFJ175
PMBFJ176
PMBFJ177
BFT46
BFR31
BFR30
PMBFJ308
PMBFJ309
PMBFJ310
PMBF4391
PMBF4392
PMBF4393
BSR56
BSR57
BSR56
BSR57
BSR58
BB187
PMBF4391
PMBF4392
PMBF4393
PMBF4391
PMBF4392
PMBF4393
BSR56
BSR57
BSR58
PMBFJ111
PMBFJ112
PMBFJ113
PMBFJ174
PMBFJ175
PMBFJ176
PMBFJ177
BF1102
BGA2709
BGA2711
BGA2712
BGA2001
BGA2001
BGA2748
BGA2771
BGA2022
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
Varicap
Varicap
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
Varicap
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
MMIC
MMIC
MMIC
MMIC
MMIC
MMIC
MMIC
MMIC
4.2 Cross-references: NXP discontinued types versus NXP replacement types
In alphabetical order of manufacturer type
Abbreviations:
BS diode Band Switch Diode
CATV Community Antenna Television System
FET Field Effect Transistor
Varicap Varicap Diode
WB trs Wideband Transistor
OM Optical Module
NXP discontinued type
BA277-01
BAP142L
BAP51-01
BAP51L
BAP55L
BB145
BB145B-01
BB151
BB157
BB178L
BB179BL
BB179L
BB181L
BB182B
BB182B
BB182L
BB187L
BB190
BB202L
BB804
BBY42
BF1203
BF689K
BF763
BF851A
BF851A
BF851B
BF851B
BF851C
BF851C
BF992/01
BFC505
BFC520
BFET505
BFET520
BFG17A
BFG197
BFG197/X
BFG25AW/XR
BFG410W/CA
BFG425W/CA
BFG425W/CA
BFG505/XR
BFG505W/XR
BFG520W/XR
BFG590/XR
BFG590W
BFG590W/XR
BFG67/XR
BFG92A
BFG92A/XR
BFG93A/XR
BFQ34/01
BFR92
BFR92AR
BFR92AT
Product family
BS diode
PIN diode
PIN diode
PIN diode
PIN diode
Varicap
Varicap
varicap
varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
FET
WB trs
WB trs
FET
FET
FET
FET
FET
FET
FET
WB trs
WB trs
WB trs
WB trs
WB trs
WB trs
WB trs
WB trs
WB trs
WB trs
WB trs
WB trs
WB trs
WB trs
WB trs
WB trs
WB trs
WB trs
WB trs
WB trs
WB trs
WB trs
WB trs
WB trs
WB trs
NXP replacement type
BA277
BAP142LX
BAP51LX
BAP51LX
BAP55LX
BB145B
BB145B
BB135
BB187
BB178LX
BB179BLX
BB179LX
BB181LX
BB182
BB182
BB182LX
BB187LX
BB149
BB202LX
BB207
BBY40
BF1203
BFS17
BFS17
BF861A
BF861A
BF851B
BF851B
BF861C
BF861C
BF992
BFM505
BFM520
BFM505
BFM520
BFS17A
BFG198
BFG198
BFG25AW/X
BFG410W
BGF425W
BGF425W
BFG505/X
BFG505W/X
BFG520W/X
BFG590/X
BFG590W/X
BFG590W/X
BFG67
BFG92A/X
BFG92A/X
BFG93A/X
BFG35
BFR92A
BFR92A
BFR92AW
NXP discontinued type
BFR93
BFR93AT
BFR93R
BFU510
BFU540
BGA2031
BGD102/02
BGD102/04
BGD104
BGD104/04
BGD502/01
BGD502/01
BGD502/01
BGD502/01
BGD502/03
BGD502/03
BGD502/05
BGD502/07
BGD502/6M
BGD502/C7
BGD502/R
BGD504
BGD504/01
BGD504/02
BGD504/09
BGD602
BGD602/02
BGD602/07
BGD602/09
BGD602/14
BGD602D
BGD702D
BGD702D/08
BGD704/01
BGD704/07S
BGD704/S9
BGD704N
BGD802/09
BGD802N
BGD802N
BGD802N/07
BGD802N/07
BGD804N
BGD804N
BGD804N/02
BGD804N/02
BGD902/07
BGD904/02
BGD904/07
BGD906/02
BGE847BO
BGE847BO
BGE847BO
BGE847BO/FC
BGE847BO/FC0
BGE847BO/FC0
Product family
WB trs
WB trs
WB trs
WB trs
WB trs
WB trs
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
NXP replacement type
BFR92A
BFR93AW
BFR93A
BFU725F
BFU725F
BGA2031/1
BGD502
BGD502
BGD704
BGD704
BGD502
BGD502
BGD502
BGD502
BGD502
BGD502
BGD502
BGD502
BGD702
BGD502
BGD502
BGD704
BGD704
BGD704
BGD704
BGD702
BGD702
BGD702
BGD702
BGD702
BGD712
BGD712
BGD712
BGD704
BGD704
BGD704
BGD714
BGD802
BGD812
BGD812
BGD812
BGD812
BGD814
BGD814
BGD814
BGD814
BGD902
BGD904
BGD904
BGD906
BGO827
BGO827
BGO827
BGO827/SC0
BGO827/SC0
BGO827/SC0
NXP Semiconductors RF Manual 10th edition
57
NXP discontinued type
BGE847BO/FC1
BGE847BO/SC
BGE847BO/SC0
BGE847BO/SC0
BGE887BO
BGE887BO/FC
BGE887BO/FC1
BGE887BO/SC
BGO847/01
BGO847/01
BGO847/FC0
BGO847/FC0
BGO847/FC01
BGO847/FC01
BGO847/SC0
BGQ34/01
BGU2003
BGX885/02
BGY1085A/07
BGY584A
BGY585A/01
BGY586
BGY586/05
BGY587/01
BGY587/01
BGY587/02
BGY587/02
BGY587/07
BGY587/09
BGY587B/01
BGY587B/02
BGY587B/09
BGY588
BGY588/04
BGY66B/04
BGY67/04
BGY67/09
BGY67/14
BGY67/19
BGY67A/04
BGY67A/14
BGY68/01
BGY685A/07
BGY685AD
BGY685AD
BGY685AL
BGY687/07
BGY687/14
BGY687B
BGY687B/02
BGY785A/07
BGY785A/09
BGY785AD
BGY785AD/06
BGY785AD/8M
BGY785AD/8M
58
Product family
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
WB
WB trs
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
NXP Semiconductors RF Manual 10th edition
NXP replacement type
BGO827/SC0
BGO827/SC0
BGO827/SC0
BGO827/SC0
BGO827
BGO827/SC0
BGO827/SC0
BGO827/SC0
BGO847
BGO847
BGO827/SC0
BGO827/SC0
BGO827/SC0
BGO827/SC0
BGO827/SC0
BFG35
BGA2003
BGX885N
BGY1085A
BGY585A
BGY585A
BGY587
BGY587
BGY587
BGY587
BGY587
BGY587
BGY587
BGY587
BGY587B
BGY587B
BGY587B
BGY588N
BGY588N
BGY66B
BGY67
BGY67
BGY67
BGY67
BGY67A
BGY67A
BGY68
BGY685A
BGY785A
BGY785A
BGY785A
BGY687
BGY687
BGE787B
BGE787B
BGY785A
BGY785A
BGY785A
BGY785A
BGY885A
BGY885A
NXP discontinued type
BGY787/02
BGY787/07
BGY787/09
BGY847BO
BGY847BO/SC
BGY84A
BGY84A/04
BGY84A/05
BGY85
BGY85A
BGY85A/04
BGY85A/05
BGY85H/01
BGY86
BGY86/05
BGY87
BGY87/J1
BGY87B
BGY88
BGY88/04
BGY88/04
BGY88/07
BGY887/02
BGY887BO
BGY887BO/FC
BGY887BO/SC
ON4520/09
ON4520/2
ON4594/M5
ON4749
ON4749
ON4831-2
ON4869
ON4876
ON4890
ON4890
ON4990
OQ2545
OQ2545B
PMBT3640/AT
PN4392
PN4393
SA5223
TZA3001
TZA3001
TZA3023
TZA3031
TZA3031
TZA3033
TZA3041
TZA3042B
TZA3043
TZA3043B
XSA5223
XSA5223
Product family
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
OM
OM
WB trs
FET
FET
OM
OM
OM
OM
OM
OM
OM
OM
OM
OM
OM
OM
OM
NXP replacement type
BGY787
BGY787
BGY787
BGO827
BGO827/SC0
BGY585A
BGY585A
BGY585A
BGY585A
BGY585A
BGY585A
BGY585A
BGY585A
BGY587
BGY587
BGY587
BGY587
BGY587B
BGY588N
BGY588N
BGY588N
BGY588N
BGY887
BGO827
BGO827/FC0
BGO827/SC0
BGY687
BGY687
BGY585A
BGY588N
BGY588N
BGY885A
BGY587
BGY1085A
BGD712
BGD712
BGD885
TZA3011
TZA3011
BFS17
PMBF4392
PMBF4393
TZA3036
TZA3047
TZA3047
TZA3026
TZA3047
TZA3047
TZA3036
TZA3047
TZA3047
TZA3046
TZA3046
TZA3036
TZA3036
5. Focus applications & products
5.1 High performance miniature BAW filters and duplexers
Bulk Acoustic Wave (BAW) filters and duplexers for Front-End Modules and Cellular Phones
Bulk Acoustic Wave filters provide high performance, ultra small size solutions for next generation
integrated cellular phones. Together with NXP Waferlevel Package this allows for seamless integration
of BAW filters into RF front-end modules.
The NXP series of high-performance Bulk Acoustic Wave (BAW)
filters and duplexers is optimized for (W-)CDMA/GSM cellular
phones. Available in NXP-patented Wafer Level Chip Scale
Packaging (WL-CSP), they provide superior performance in an
ultra-small size.
Features
• High performance BAW filters and duplexers
- Low insertion loss
- High stopband rejections/isolations
- Low temperature drift
- Superior power handling
- Enhanced ESD robustness
• Ultra-small, NXP-Waferlevel Package
2
- Ultra-small footprint (as small as 1.5mm )
- Very low profile (height < 450 µm after solder reflow)
Benefits
• Optimized for:
- UMTS interstage filter (band II)
- UMTS Duplexer (band I, II, III, VII)
- Satellite radio, Bluetooth
• Easy package-less chip scale integration into RF front-end
Compared to Surface Acoustic Wave (SAW) filters, BAW
typically offers superior power handling, enhanced ESD
robustness, smaller size, reduced in-band insertion loss and
increased steepness of the filter skirts in lower and upper
transition bands. BAW filters also offer less center frequency
drift versus temperature change and are more suitable for
applications at frequencies ranging from 1 to 20 GHz.
High-performance BAW filters & Duplexers
Designed for easy integration into front-end modules, they
deliver low insertion loss and high selectivity. NXP BAW
filters and duplexers support receive (Rx) and transmit (Tx)
applications in (W-)CDMA and other wireless applications
higher than 1.5 GHz :
• US PCS (1900 MHz)
- BWT190(A) high-rejection Tx interstage filter
- BWD190(A) duplexer
• UMTS (2100MHz)
- BWD210(A) BAW duplexer
• Satellite filter (2300 MHz)
- BWR230(A) antenna filter
module
• In house EM simulation to support FEM design in
• Reduced PCB implementation size
• Ideal for high frequency applications
• Superior performance in very small size
NXP Semiconductors RF Manual 10th edition
59
NXP Semiconductors BAW devices
Type
Description
BWT190(A)
PCS Tx interstage filter
BWD190(A)
PCS duplexer
BWD210(A)
UMTS duplexer
BWR230(A)
Satellite filter
Freq. Size chip scale
(MHz) (mm2 )
1900 1.4 x 0.7
Tx: 1.3 x 0.9
1900
Rx: 1.4 x 0.9
Tx: 1.3 x 0.9
2100
Rx: 1.4 x 0.9
2300 n.a.
Molded
2.0 x 1.6
3 x 2.5
3 x 2.5
1.6 x 1.0
Electrical characteristics of the BWD190A, Tj = 25°C,Z0= 50Ω
Parameter
Insertion Loss
Band
Tx
Rx
Tx
Frequency
(MHz)
1850 – 1910
1930 – 1990
Ripple
Rejection
Tx to Antenna Rx
Rx to Antenna Tx
Tx
Return Loss
Rx
Antenna
Tx
Isolation (Tx – Rx)
Rx
Passband characteristics of duplexer BWD190A
60
NXP Semiconductors RF Manual 10th edition
Min
(dB)
41
50
12
12
12
53
45
Max
(dB)
2.8
3.0
0.5
-
5.2 Total solution for satellite LNB
Create a Ku-band DVB-S LNB for less, with higher reliability
NXP fully integrated down converter (PLL synthesizer/mixer/amplifier) TFF1004HN
for satellite LNB
The TFF1004HN is an integrated downconverter for use in Low Noise Block (LNB) converters in
a 10.7 GHz to 12.75 GHz Ku band satellite receiver system. This alignment-free concept replaces
current solutions that require components such as GaAs mixer and DRO. As part of our LNB
chipset, it enables a Ku-band satellite receiver that lowers total cost of ownership and guarantees
the stability of the local oscillator.
TFF1004HN is a highly integrated IC that includes an LNA,
a mixer, a down-converter, a PLL, a crystal oscillator, and an IF
buffer.
It is manufactured in NXP’s breakthrough SiGe BiCMOS
process for microwave applications, which is more costeffective
than GaAs processes and more reliable than discrete
implementations.
To comply with Asian and European DVB-S standards, the
TFF1004HN supports RF input frequencies between 10.7 and
12.75 GHz, and uses a selectable LO that operates at 9.75 or
10.6 GHz.
Features
•4 Pre-amplifier, mixer, buffer amplifier, and PLL synthesizer in
one IC
•State-of-the-art SiGe BiCMOS process
•Alignment-free concept
•LO frequency with XTAL control
•Low phase noise
•Switched LO frequency: 9.75 and 10.6 GHz
•Low spurious
•HVQFN24 package (4 x 4 x 0.85 mm)
•Part of complete LNB chipset:
- NXP UAF3000TS for supply and band/polarization switching
- NXP BFU725F for 2nd LNA stage
•Demo board available
Application
•4 Ku-band DVB-S receiver
Designed for use in the Low Noise Block (LNB) of a Ku-band
satellite receiver for Asian and European standards, the NXP
It is housed in a small HVQFN24 package that measures only
4 x 4 x 0.85 mm, and is designed to work as part of a complete
chipset that provides a total LNB solution.
Complete LNB chipset
The chipset consists of the TFF1004HN, the UAF3000TS, and
the BFU725F. The UAF3000TS is a FET bias controller with a
polarization switch and tone detection. It provides biasing for
up to three LNA devices. An integrated bandgap reference
ensures the accuracy of voltage and tone detection, also over
temperature. For horizontal and vertical switching, there is an
integrated supply-voltage detector, and for switching between
high and low bands, there is a 22-kHz tone detector. The
supply voltage range, 3.3 V or 5 V, is detected automatically.
The BFU725F is an NPN microwave transistor for high-speed,
low-noise applications. In the LNB chipset, it is used for the
second LNA stage. It is manufactured in a 110-GHz fT-SiGeC
technology, so it delivers an excellent noise figure (1.0 dB at 12
GHz), and a high maximum stable gain (13 dB at 12 GHz).
NXP Semiconductors RF Manual 10th edition
61
UAF3000
3.3 V
REGULATOR
SUPPLY & BAND/POLARIZATION SWITCHING
horizontal
1st STAGE LNA
LO_SEL VCC
vertical
BFU725F
1st STAGE LNA
2nd STAGE LNA
TFF1004
image
reject
IF gain
PLL
9.75/10.6 GHz
brb010
LNB application with TFF1004HN, UAF3000TS, and BFU725F
TFF1004HN demo board
TFF1004HN
BFU725F
UAF3000TS
62
Input frequency range
(GHz)
10.7 to 12.75
Conversion gain Gc
(dB)
32
Typ. collector current
IC(max) (mA)
Transition frequency
fT (GHz)
Noise figure NF (dB) @
12 GHz
8
68
1.0
Supply voltage VCC (V)
Drain voltage VD (V)
Drain current IDO (mA)
3.3 or 5
2
10
NXP Semiconductors RF Manual 10th edition
Noise figure NF (dB)
9
Output IP3 IP3(out)
(dB)
10
Switched LO frequency
(GHz)
9.75 / 10.6
Max. stable power
gain MSG/GP(max)
(dB) @ 12 GHz
13
Collector-emitter
breakdown voltage
BVCEO (V)
3.2
Supply current ICC
(mA)
6
Polarization detection
voltage VPOL (V)
14.75
5.3 NXPCATVC-familyfortheChineseSARFTstandard
Connectingpeople,protectingyournetwork
SpeciallydesignedfortheChineseHybridFiberCoax(HFC)infrastructure,NXPCATVC-family
offersyouatotalsolutionforcableTVnetworks.Itisbothflexibleenoughforconnectingrural
communitiesaspartofChina’s‘Connectingeveryvillage’programandpowerfulenoughfor
upgradingmajorcitiesfromanalogtohigh-enddigitalservices.AllC-typedevicesarecompliant
withtheChineseStateAdministrationforRadio,FilmandTelevision(SARFT)standard,andcover
mostHFCapplicationsinthe550-870MHzrange.
Further extending our high quality CATV portfolio, this
new family lets you address an even wider range of HFC
applications. Dedicated solutions for the implementation
of CATV systems in China, our C-type devices deliver the
performance you need for modern TV infrastructures.
Products
• BGY588C, BGE788C and CGY888C push-pull amplifiers
• BGD712C, CGD944C and CGD942C power doublers
• BGO807C optical receiver
Features
• Excellent linearity, stability and reliability
• High power gain
• Extremely low noise
• Silicon Nitride passivity
• GaAs HFET dies for high end devices
The BGY588C, BGE788C and BGD712C devices cover the
frequency range from 550 MHz to 750 MHz. Extending the
C-family portfolio into the high-end segment, the CGD944C,
CGD942C, CGY888C and BGO807C operate between 40 MHz
and 870 MHz and have been specifically tested under Chinese
raster conditions. Manufactured using our GaAs HFET die
process, the CGD942C, and CGD944C are high-gain, highperformance 870 MHz power doublers. They are capable of
satisfying the demanding requirements of top-end applications
including high-power optical nodes.
Our GaAs HFET MMIC dies are providing ‘by design’ the
best ESD protection levels with no needs for external TVS
components normally used with GaAs pHEMT devices.
All CATV C-type devices feature a see-through cap that makes
it easy to distinguish them from counterfeit products.
Benefits
• Compliant with Chinese SARFT HFC networks standard
• Transparent cap allows confirmation of product authenticity
• Rugged construction
NXPSemiconductorsRFManual10thedition
63
BGY588C and BGE788C
The last stage of an HFC network structure is called a
terminating amplifier or ‘user amplifier’ as it is close to the
subscribers. Each terminating amplifier requires a single
module such as BGY588C for 550 MHz, BGE788C for 750 MHz
and CGY888C for 860 MHz systems. These modules are fitting
perfectly in the Chinese ‘Connecting to Every Village’ projects.
IN
port
PAD
EQ
BGY588C
BGE788C
CGY888C
BGD712C
The BGD712C is a 750 MHz, 18 dB power doubler module.
It has been designed for 750 MHz optical nodes including
ordinary or optical receivers and distribution amplifiers. It can
also be used in line extender amplifiers together with a 750 MHz
push-pull module, such as BGY785A or BGY787. As such it can be
used widely in Chinese ‘Connecting to Every Village’ projects.
IN
port
OUT
port
bra820
CGD944C and CGD942C
Our full GaAs power doublers modules, CGD942C and CGD944C
offer high output power and better CTB and CSO than other
modules. Designed for high-end HFC networks containing optical
nodes with multiple out-ports, these modules enable each port
to directly cover at least 125 subscribers. These two devices are
ideal when used in upgrading HFC networks to 860 MHz.
PAD
OUT
port
EQ
BGY785A
BGY787
BGD712C
bra821
BGO807C
BGO807C is an integrated optical receiver module that
provides high output levels and includes an integrated
temperature compensated circuitry. In your optical node
design, BGO807C enables a high performance/ price ratio and
ruggedness. When upgrading an HFC network from analog to
digital our BGO807C is the perfect fit.
CGD942C/CGD944C
PAD
H
L
OUT
port 1
BGD812
CGD942C/CGD944C
PAD
EQ
PAD
BGO807C
RF switch
(N + 1)
BGY885A
BGD812
BGY887
H
L
PAD
CGD942C/CGD944C
PAD
H
L
BGO807C
OUT
port 3
CGD942C/CGD944C
BGO807C
PAD
H
L
NXP Semiconductors RF Manual 10th edition
EQ
BGY885A
H
L
OUT
port 1
H
L
OUT
port 2
BGD812
PAD
bra823
OUT
port 4
bra822
64
PAD
OUT
port 2
C-family application information
NXP C-family by application
Application
Optical node
Optical receiver
Distribution amplifier
Line extender amplifier
Terminating amplifier
BGY588C
•
BGE788C
CGY888C
•
•
•
•
BGD712C
•
•
•
•
BGO807C
•
•
•
•
CGD944C
•
•
•
•
CGD942C
•
•
Push-pull amplifiers
Parameters
Power gain (dB)
Slope cable equivalent (dB)
Composite triple beat (dB)
Composite 2nd order distortion (dB)
Noise (@ fmax) (dB)
Total current comsumption (mA)
Frequency range (MHz)
typ.
range
max.
max.
max.
typ.
range
BGY588C
34,5
0.2 - 1.7
-57
-62
8
325
40 - 550
BGE788C
34,2
0.3 - 2.3
-49
-52
8
305
40 - 750
CGY888C
35,5
1.5 typ.
-66
-64
3 typ.
280
40 - 870
typ.
range
max.
max.
max.
typ.
range
BGD712C
18,5
0.5 - 1.5
-62
-63
7
395
40 - 750
CGD944C
25
1-2
-66
-67
5
450
40 - 870
CGD942C
23
1-2
-66
-67
5
450
40 - 870
Power doublers
Parameters
Power gain (dB)
Slope cable equivalent (dB)
Composite triple beat (dB)
Composite 2nd order distortion (dB)
Noise (@ fmax) (dB)
Total current comsumption (mA)
Frequency range (MHz)
Optical receiver
Parameters
Responsivity (Rmin)
Slope cable equivalent (dB)
Composite triple beat (dB)
Composite 2nd order distortion (dB)
Noise (@ fmax) (dB)
Total current comsumption (mA)
Frequency range (MHz)
Connector
BGO807C
min.
800
range
0-2
max.
-71
max.
-55
max.
8,5
typ.
190
range
40 - 870
- / SCO / FCO
NXP Semiconductors RF Manual 10th edition
65
5.4 Upgrade to a sustainable 1-GHz CATV network
NXP high-gain power doublers CGD104x for 1-GHz CATV applications These high-performance GaAs devices for 1-GHz CATV applications make it easy for cable
operators to extend their services to include HDTV, VoIP, and digital simulcasting.
Designed for 1-GHz “sustainable networks”, these highperformance GaAs devices enable extended bandwidth and
higher data rates. They deliver increased network capacity and
make way for high-end services like HDTV, VoIP, and digital
simulcasting.
The power doublers CGD1042 and CGD1044 are ideal for
use in line extenders and trunk amplifiers. Their high-output
counterparts, the CGD1042H and CGD1044H, are designed
for use in fiber deep-optical-node applications (N+0/1/2),
delivering the highest output power on the market today.
Products
• Power doublers: CGD1042, CGD1044
• High-output power doublers: CGD1042H, CGD1044H
The GaAs HFET die process delivers high gain and high
performance, along with lower current and better CTB and
CSO ratings.
Features
• Excellent linearity, stability, and reliability
• High power gain
• Extremely low noise
• Silicon Nitride passivity
• GaAs HFET dies for high-end applications
• Rugged construction
These 1-GHz solutions are designed for durability and offer
superior ruggedness, an extended temperature range, highpower overstress capabilities, and high ESD levels. The result is
low cost of ownership.
Benefits
• Simple upgrade to 1-GHz capable networks
• Optimized heat management
• Excellent temperature resistance
• Low total cost of ownership
• High ESD levels
• High power-stress capability
• Highly automated assembly
Applications
• Hybrid Fiber Coax (HFC) applications
• Line extenders
• Trunk amplifiers
• Fiber deep-optical-node (N+0/1/2)
66
NXP Semiconductors RF Manual 10th edition
The GaAs die is inserted in a unique HVQFN package that is
then mounted on thermal vias that manage heat transfer to the
heat sink. Temperature-control circuitry keeps the module’s
high performance stable over a wide range of temperature
changes.
Assembly is fully automated and requires almost no human
intervention and therefore repeatability remains very high.
Upcoming push-pull products
New push-pulls, currently under development, will combine
with the power doublers to service almost all modern HFC
applications. The push-pull CGY1041 will deliver a gain of 21
dB, the CGY1043 a gain of 23 dB and the CGY1047 a gain of
27dB.
Quick reference data
Parameters
Power gain (dB)
Slope cable equivalent (dB)
Composite triple beat (dB)
Composite 2nd order distortion (dB)
Noise (@ fmax) (dB)
Total current comsumption (mA)
Frequency range (MHz)
(1)
(2)
CGD1042
23
2
-70(1)
-75(1)
5
450
40 - 1000
typ.
typ.
typ.
typ.
max.
typ.
range
CGD1044
25
2
-70(1)
-75(1)
5
450
40 - 1000
CGD1042H
23
1,5
-75(2)
-76(2)
6
450
40 - 1000
CGD1044H
25
1
-75(2)
-76(2)
6
450
40 - 1000
79 analog channels, 13.9 dB extrapolated tilt up to 1 GHz, Vout = 56.9 dBmV @ 1GHz
79 analog channels + 75 digital channels (-6 dB offset, 18 dB extrapolated tilt up to 1 GHz, Vout = 59 dBmV @ 1GHz)
CGD942C/CGD944C
PAD
H
L
OUT
port 1
CGD942C/CGD944C
PAD
EQ
PAD
BGO807C
RF switch
(N + 1)
BGY885A
BGD812
BGY887
H
L
OUT
port 2
CGD942C/CGD944C
PAD
H
L
OUT
port 3
CGD942C/CGD944C
BGO807C
PAD
H
L
OUT
port 4
bra822
An optical node with multiple out-ports using the CGD1042(H) and CGD1044(H)
Power doubler shown without cap
NXP Semiconductors RF Manual 10th edition
67
5.5 A perfect match up to 20 GHz
SiGeC microwave NPN transistor BFU725F
Meet the trend towards higher frequencies. With NXP Semiconductors’ latest SiGeC microwave
NPN transistor BFU725F, you get high switching frequencies plus extremely high gain and low noise.
All this in an easy-to-use SOT343F package. It’s the ideal solution for applications up to 20 GHz.
The NPN microwave transistor BFU725F delivers an unbeatable
blend of high switching frequency, high gain and very low
noise. Thanks to its ultra-low noise figure, it’s perfect for your
sensitive RF receivers particularly those for high-performance
cell phones. Alternatively, with its high cut-off frequency, it’s
your ideal solution for microwave applications in the 10 GHz
to 30 GHz range, such as satellite TV receivers and automotive
collision avoidance radar.
Features
•Very low noise (0.4 dB at 1.8 GHz / 0.67 dB at 5.8 GHz)
• High maximum stable gain (27.8 dB at 1.8 GHz / 10 dB
at 18 GHz)
• High switching frequency (f T >100 GHz / fMAX >150 GHz)
• Plastic surface-mount SOT343F package
Benefits
• SiGeC process delivers high switching frequency from
a silicon-based device
• Cost-effective alternative to GaAs devices
• RoHS compliant
Applications
• GPS systems
• DECT phones
• Low noise amplifier (LNA) for microwave communications
systems
• 2nd stage LNA and mixer in direct broadcast satellite (DBS)
low-noise blocks (LNBs)
• Satellite radio
• WLAN and CDMA applications
• Low-noise microwave applications
68
NXP Semiconductors RF Manual 10th edition
The BFU725F get its outstanding performance from our
innovative silicon-germanium-carbon (SiGeC) BiCMOS
process. QUBiC4X was designed specifically to meet the
needs of real-life, high-frequency applications and delivers an
unrivalled fusion of high power gain and excellent dynamic
range. It combines the performance of gallium-arsenide (GaAs)
technologies with the reliability of a silicon-based process.
In addition, with the BFU725F, you don’t need a biasing IC or
negative biasing voltage. So it’s a much more cost-effective
solution than GaAs pHEMT devices.
Quick reference data
1
Parameter
Collector-emitter breakdown voltage
Maximum collector current
Transition frequency
Symbol
BVCEO
I C(max)
fT
Conditions
I C = 1 mA; I B = 0
Noise figure
NF
Maximum stable power gain
MSG / G P(max)
Value
3.2 V
40 mA
68 GHz
0.4 dB
0.45 dB
0.7 dB
1.0 dB
26.6 dB
25.5 dB
17 dB
13 dB
VCE = 2 V; I C = 25 mA; f = 2 GHz
VCE = 2 V; I C = 5 mA; f = 1.8 GHz; Γs = Γopt
VCE = 2 V; I C = 5 mA; f = 2.4 GHz; Γs = Γopt
VCE = 2 V; I C = 5 mA; f = 5.8 GHz; Γs = Γopt
VCE = 2 V; I C = 5 mA; f = 12 GHz; Γs = Γopt
VCE = 2 V; I C = 25 mA; f = 1.8 GHz
VCE = 2 V; I C = 25 mA; f = 2.4 GHz
VCE = 2 V; I C = 25 mA; f = 5.8 GHz
VCE = 2 V; I C = 25 mA; f = 12 GHz
Calculated from noise figure using a lowpass bandwidth filter at 0.7x bit rate and a source with an extinction ratio of 10% and a photodiode responsivity of 0.9A/W.
bra856
80
fT
(GHz)
60
30
40
20
20
10
0
bra857
40
gain
(dB)
0
10
20
IC (mA)
30
Transition frequency as a function of collector current (typical values)
0
MSG
GMAX
MSG
S21
0
4
8
12
16
f (GHz)
20
Gain as a function of frequency (typical values)
NXP Semiconductors RF Manual 10th edition
69
5.6 Best-in-class LNB performance
MMIC wideband amplifier BGA2714
Improve the performance of your LNB design with our MMIC wideband amplifier BGA2714.
It delivers best-in-class performance at very low current, is small and needs very few external
components. In short, it’s the ideal 1st stage IF amplifier for LNBs and other low-noise wideband
applications.
•Unconditionally stable
•Very few external components required
•Compact SOT363 package
Applications
•LNB IF amplifier
•General-purpose low-noise wideband amplifier for
frequencies up to 2.7 GHz
Our MMIC wideband amplifier BGA2714 is designed to
meet the specific needs of LNB designs. It operates from a
conveniently low supply voltage with a low supply current.
A demoboard is available to help further simplify your design-in process
Features
•E xtremely flat gain curve (21 dB ± 1 dB up to 2.5 GHz)
•Wide frequency range (up to 2.7 GHz @ 3 dB gain
bandwidth)
•Internally matched to 50 Ω
•Very low current (4.6 mA @ 3 V)
•Low supply voltage (3 V)
•Good linearity (2.1 dBm @ 1 GHz)
•Low noise (2.2 dB @ 1 GHz)
•E xcellent reverse isolation (> 50 dB up to 2 GHz)
In addition, it delivers industry-leading performance with a
wide frequency range, high and flat power gain and low noise
Supplied in a compact, industry-standard SOT363 package, it
simplifies system integration.
MMICs like NXP Semiconductors’ BGA2714 are smart RF
solutions that automatically compensate for temperature and
process variations. They integrate transistors, resistors and
capacitors into a single device, reducing component count and
simplify design. In fact, with the BGA2714 you need just two
coupling capacitors and an RF decoupling capacitor.
mixer
30
Gp
(dB)
from RF circuit
25
wideband
amplifier
20
oscillator
1
15
2
Quick reference data
5
0
0
500
1000
1500
2000
2500
3000
f (MHz)
Tamb = 25ºC; Pdrive = - 40 dBm; Z 0 = 50 Ω
1
Vs = 3.3 V; I s = 4.96 mA
2
Vs = 3.0 V; I s = 4.58 mA
3
Vs = 2.7 V; I s = 4.16 mA
Power gain as function of frequency; typical values
70
bra922
Application as IF amplifier
3
10
to IF circuit
or demodulator
NXP Semiconductors RF Manual 10th edition
Symbol
Parameter
Vs
supply voltage
Condition
Typical value
3 V
Is
supply current
4.58 mA
Gp
power gain
1 GHz
NF
noise figure
1 GHz
20.4 dB
2.2 dB
PL(sat)
saturated load power
1 GHz
- 3.4 dBm
5.7 Mobile applications break free with WiMAX MIMO
WiMAX 802.16e MIMO transceivers UXA234xx
High broadband mobile applications are quickly becoming a reality thanks to the benefits of smart
antennae technologies, such as WiMAX 802.16e multiple input/multiple output (MIMO). By offering
a complete family of compatible receiver/transmitters, including full dual Rx/Tx solutions, NXP
helps you give consumers a richer mobile lifestyle with robust high-speed internet access and video
streaming from their mobile equipment.
Applications
•Smart phones
•L aptop PCs
•PDAs
•Games consoles
•PCI and PCIe cards
Features
•Fully integrated direct up transmitter and ZIF receiver
architecture
•Dual Rx and Tx for MIMO operation
•Low noise, high dynamic range receiver with high linearity
•Fully integrated VCO with integrated supply voltage
regulator
•Serial bus digital interface (4 wires)
•Supply voltage 2.7 V to 2.9 V
•Support for channel bandwidths from 3.5 MHz to 20 MHz
Benefits
•E xtremely low noise figure
•Support for flexible calibration techniques ensures optimum
performance and lowest power
•Field proven solution
•No external IF filter required
•Minimal external component requirement
Our next generation UXA234xx WiMAX products enable
high broadband mobile applications, by allowing you to add
robust high-speed internet access and video streaming to
mobile equipment. Developed in close cooperation with end
customers and baseband companies, NXP Semiconductors’
proven WiMAX solutions deliver best-in-class performance.
They provide flexible interfacing to a variety of baseband
devices and offer seamless handover from basestation to
basestation.
Covering frequencies from 2.3 GHz to 3.8 GHz, these
fully integrated, low-power, direct conversion transceivers
easily allow total WiMAX system solutions to meet TTA,
FCC and ETSI requirements. With dual receiver/transmitter
configurations available they can also deliver better uplink
performance and improve your total end-user system. In
addition, low power requirements ensure longer battery
life. Highly integrated, the UXA234xx family requires the
minimum of extra external parts, significantly reducing overall
component count. Their small 6 mm x 6 mm footprint gives
further space and cost savings, while being housed in a lowprofile (0.85 mm) package ensures they meet the needs of
mobile manufacturers.
NXP Semiconductors RF Manual 10th edition
71
Mx
LNA
filter
ADC
90
0
antenna2
SWITCH
LOOP BACK
ADC
receiver
Mx
LNA
filter
ADC
90
VGA buffer
0
ADC
antenna1
SWITCH
LOOP BACK
TEMP. SENSOR
TCXO
POWER DETECTOR
PLL
PA
/2
transmitter
90
PA driver
0
filter
DAC
Mx
DAC
filter
POWER DETECTOR
PA
transmitter
90
PA driver
0
filter
DAC
Mx
DAC
RF IC
filter
BB IC
bra970
Typical application diagram using the UXA23476
UXA23465
UXA23466
UXA23475
UXA23476
UXF23480
UXF23460
UXF23470
72
Frequency
range (GHz)
2.3 - 2.7
2.3 - 2.7
3.3 - 3.8
3.3 - 3.8
2.3 - 2.4
2.5 - 2.7
3.3 - 3.8
Type
NF (dB)
2 Rx/1 Tx
2 Rx/2 Tx
2 Rx/1 Tx
2 Rx/2 Tx
1 Rx/1 Tx
1 Rx/1 Tx
2 Rx/1 Tx
2.5
2.5
3.0
3.0
3.2
3.5
3
NXP Semiconductors RF Manual 10th edition
Rx gain
(max) (dB)
87
87
87
87
79
77
87
ICC (mA)
RX/TX
81/100
81/182
81/100
81/182
129/153
129/140
50/85
Tx gain
range (dB)
74
74
74
74
74
74
74
Linear output power meeting
spectrum mask (dBm)
+2.5 (TTA) +1 (ETSI, FCC)
+2.5 (TTA) +1 (ETSI, FCC)
0 (ETSI)
0 (ETSI)
+1
+1
(0) ETSI
Package size
HVQFN48 (mm)
6 x 6 x 0.85
6 x 6 x 0.85
6 x 6 x 0.85
6 x 6 x 0.85
7 x 7 x 0.85
7 x 7 x 0.85
6 x 6 x 0.85
5.8 Boost RF performance and reduce system size
RF PIN diodes in leadless SOD882T
Deliver the maximum performance and functionality in the smallest space with our new RF PIN
diodes in SOT882T. These unique products enhance the RF performance of your system while
reducing its form factor and cutting your time to market.
•Base stations
•eMetering
•Bluetooth and wireless LAN
•Car Radio
Our RF PIN diodes are ideal for a wide range of mobile
communications and RF applications. Their low loss and low
distortion levels improve battery life and quality in mobile
phones and cordless phones. Moreover, their extremely low
forward resistance, diode capacitance and series inductance
simplify design-in.
Features
•Low series inductance
•Low capacitance
•Leadless, package with very small footprint (1.0 mm x 0.6 mm)
•Low profile (0.4 mm)
•Low insertion loss
Benefits
•Unrivalled performance
•Faster time to market
•Smaller end products
•Easier assembly
We offer an extensive portfolio of RF PIN diodes. So you’re
sure to find the right solution for your needs. The latest
additions to this portfolio are housed in the ultra-small,
leadless SOD882T package, making them particularly suitable
for wireless devices.
As part of our ultra-thin leadless package (UTLP) platform,
the SOD882T package uses a patent-pending etch process
that produces extremely high silicon to footprint ratio and
a profile as low as 0.4 mm. In addition, the package has no
leads and so delivers very low parasitics for maximum RF
performance. This unique combination of properties results
in devices that maximize the performance and functionality
of your system while reducing its size and weight. They also
simplify board assembly to help cut your time to market.
Applications
•Cellular and cordless phones
•Low noise blocks
•Multi-switch boxes
•Set-top boxes
•CATV infrastructure
NXP Semiconductors RF Manual 10th edition
73
Product overview
Type
Limits
If (mA)
50
60
100
100
100
100
100
100
Vr (V)
50
60
50
50
100
30
60
50
BAP50LX
BAP51LX
BAP55LX
BAP63LX
BAP64LX
BAP65LX
BAP1321LX
BAP142LX
0.5 mA
25
5.5
3.4
2.5
20
3.4
3.3
Typ. RD (Ω) @
1 mA
14
3.6
2.3
1.95
10
1
2.4
2.4
10 mA
3
1.5
1
1.17
2
0.56
1.2
1
Typ. Cd (pF) @
1V
0.35
0.3
0.23
0.35
0.37
0.6
0.35
0.23
0V
0.45
0.4
0.27
0.4
0.52
0.65
0.4
0.26
20 V
0.3 (@ 5 V)
0.2 (@ 5 V)
0.18 (@ 5 V)
0.3
0.23
0.375
0.25
0.15 Functions of pin diodes
Telecom
Cellular
Switching
Attenuating
74
•
Cordless
•
Lownoise
block
•
NXP Semiconductors RF Manual 10th edition
Consumer and automotive
Multi
Set top
Walkieswitch
talkie
box
box
•
•
•
Industrial
Car
radio
CATV
Base
station
•
•
•
Connectivity
eMetering
Bluetooth
•
•
WLAN
•
Whatifyoucouldbuildtheworld’sbest
portableWiMAXdevice,now!
LookatWiMAX,chapter5.7
NXPSemiconductorsRFManual10thedition
5
6. Packing and packaging information
6.1 Ultra thin leadless package platform
The unique design improves the package’s electrical and
thermal performance, and at the same time increases the
moisture resistance. The chosen technology enables the
reduction of added package material to a minimum, to
come as close to a bare die as possible, without the bare die
drawbacks in assembly. The resulting very low parasitics give a
much better performance than leaded packages or even QFN
type, enabling a design-in range, which includes
high-frequency applications operating at up to 24 GHz.
NXP ultra-thin leadless package (UTLP) platform for faster
time-to-market, smaller form factor.
Features
• Low height (0.4 mm)
• Small footprint
• Very flexible platform
• High silicon-to-footprint ratio
• Increased performance
• Footprint compatible with JETA standard SC-101
• Very efficient packing (15k/7” reel)
• RoHs-compliant, green plastic.
The product creation flexibility also supports packaging
techniques like multiple dies, multiple leads with isolated
die pads, re-routing and even fine pitch flip chip, which
enhances RF performance even further. This enables more
functionality in a smaller space. The result is a package, which
increases customer’s design flexibility, reduces time to market
and improves performance in a broad range of (mobile)
applications.
The package makes board assembly easier. The footprint
is compatible with JETA standard SC-101 and because of
the built-in standoff; both metal defined and solder resist
defined PCB layouts can be used. To lessen the impact on the
environment the package is already dark green and packed
with as many as 15k units on a 7” reel.
Ordering information
Benefits
• Improved electrical, thermal and moisture resistance
• Reduced noise
• Easier board assembly
• More functionality in a smaller space
• Excellent RF performance.
The NXP ultra-thin leadless package (UTLP) uses a patentpending etch process, enabling a lead frame with independent
top and bottom layouts, giving maximum product creation
flexibility. A very high silicon-to-footprint ratio, combined
with a low profile of 0.4 mm makes the device perfectly suited
for space constrained portable applications, like mobile
communications, PDA’s and handheld devices, increasing
performance with same footprint.
76
NXP Semiconductors RF Manual 10th edition
Type number
BAP50LX
BAP51LX
BAP63LX
BAP64LX
BAP65LX
BAP1321LX
BB202LX
BB178LX
BB179LX
BB182LX
BAP55LX
BAP142LX
Description
Silicon PIN diode
Silicon PIN diode
Silicon PIN diode
Silicon PIN diode
Silicon PIN diode
Silicon PIN diode
Low-voltage variable FM capacitance diode
VHF-high variable capacitance diode
UHF variable capacitance diode
VHF-low variable capacitance diode
Silicon PIN diode
Silicon PIN diode
Package
SOD882T
SOD882T
SOD882T
SOD882T
SOD882T
SOD882T
SOD882T
SOD882T
SOD882T
SOD882T
SOD882T
SOD882T
6.2 Packing quantities per package with relevant ordering code
Packing
quantity
3,000
11,000
Product
12NC ending
115
135
Packing
method
8 mm tape and reel
8 mm tape and reel
SOD323/SC-76
3,000
10,000
115
135
8 mm tape and reel
8 mm tape and reel
SOD523/SC-79
3,000
10,000
8,000
20,000
115
135
315
335
8 mm tape and reel
8 mm tape and reel
2 mm pitch tape and reel
2 mm pitch tape and reel
SOD882T
15,000
315
8 mm tape and reel
SOT23
3,000
10,000
215
235
8 mm tape and reel
8 mm tape and reel
SOT54
5,000
5,000
10,000
10,000
112
412
116
126
bulk, delta pinning
bulk, straight leads
tape and reel, wide pitch
tape ammopack, wide pitch
SOT89/SC-62
1,000
4,000
115
135
12 mm tape and reel
12 mm tape and reel
SOT115
100
112
4 tray/box SOT143(N/R)
3,000
10,000
215
235
8 mm tape and reel
8 mm tape and reel
SOT223/SC-73
1,000
4,000
115
135
12 mm tape and reel
12 mm tape and reel
SOT323/SC-70
3,000
10,000
115
135
8 mm tape and reel
8 mm tape and reel
SOT343(N/R)
3,000
10,000
115
135
8 mm tape and reel
8 mm tape and reel
SOT360
2,500
118
16 mm tape and reel
SOT363/SC-88
3,000
10,000
115
135
8 mm tape and reel
8 mm tape and reel
SOT403
2,500
118
12 mm tape and reel
SOT416/SC-75
3,000
115
8 mm tape and reel
SOT560
490
2,450
551
557
tray
multiple trays
SOT567
200
500
112
118
4tray/box
32 mm tape and reel
SOT616
6,000
118
12 mm tape and reel
SOT619
260
4,000
551
518
tray
multiple trays
SOT638
90
450
551
557
tray
multiple trays
SOT666
4,000
115
8 mm tape and reel
SOT724
2,500
118
16 mm tape and reel
SOT778
490
4,000
551
518
tray
multiple trays
Package
SOD110
NXP Semiconductors RF Manual 10th edition
77
6.3 Marking codes list
In case a ‘%’ is given in the marking code, it means this type can be assembled at different assembly sites.
Instead of a ‘%’, you will find:
p = made in Hong-Kong
t = made in Malaysia
W = made in China
Marking code
1
2
7
8
9
%13
%3A
%4A
%5A
%6G
%6J
%6K
%6S
%6W
%6X
%6Y
%AB
10%
1B%
1C%
1N%
1W20%
21%
22%
24%
25%
26%
28%
29%
2A%
2L
2N
2R
30%
31%
32%
33%
34%
38%
39%
40%
41%
42%
47%
48%
49%
4A
4K%
4L%
4W%
50%
5K%
5W%
6F%
6K%
6W%
7K%
8K%
A1
78
Type
BA277
BB182
BA891
BB178
BB179
BB207
BGA6289
BGA6489
BGA6589
PMBF4393
PMBF4391
PMBF4392
PMBFJ176
PMBFJ175
PMBFJ174
PMBFJ177
BF1210
BAT18
BGA2717
BAP50-05
BAP70-04W
BAP51-05W
BF545A
BF545B
BF545C
BF556A
BF556B
BF556C
BF861A
BF861B
BF862
BF1208
BF1206F
BF1207F
BF861C
BFR505
BFR520
BFR540
BFT25A
PMBFJ108
PMBFJ109
PMBFJ110
PMBFJ111
PMBFJ112
PMBFJ113
PMBFJ308
PMBFJ309
BF1208D
BAP64-04
BAP50-04
BAP64-04W
PMBFJ310
BAP64-05
BAP64-05W
BAP1321-04
BAP64-06
BAP50-04W
BAP65-05
BAP70-05
BA591
Package
SOD523
SOD523
SOD523
SOD523
SOD523
SOT23
SOT89
SOT89
SOT89
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT363
SOT23
SOT363
SOT23
SOT323
SOT323
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT666
SOT666
SOT666
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT666
SOT23
SOT23
SOT323
SOT23
SOT23
SOT323
SOT23
SOT23
SOT323
SOT23
SOT23
SOD323
NXP Semiconductors RF Manual 10th edition
Marking code
A1
A1
A2
A2
A2
A2%
A3
A3
A3
A3%
A5
A5%
A6%
A7%
A8
A8%
A8%
A9
B6B6%
B7%
BC%
BFG135
BFG198
BFG31
BFG35
BFG541
BFG591
BFG94
BFG97
BLT50
BLT70
BLT80
BLT81
C1%
C2%
C4%
C5%
D2
D3
D4%
E1%
E1%
E1%
E2%
E2%
E3%
FB
FF
FG
G2
G2%
G3%
G4%
G5%
K1
K2
K4
K5
K6
Type
BB208-02
BGA2001
BAT18
BB184
BB208-03
BGA2022
BAP64-03
BB198
BGA2003
BGA2031/1
BAP51-03
BGA2011
BGA2012
BFG310W/XR
BAP50-03
BFG325W/XR
PMBFJ620
BAP70-03
BGA2715
BFU725F
BGA2716
BFQ591
BFG135
BFG198
BFG31
BFG35
BFG541
BFG591
BFG94
BFG97
BLT50
BLT70
BLT80
BLT81
BGM1011
BGM1012
BGM1013
BGM1014
BAP63-03
BAP65-03
BFR30/B
BFS17
BFS17/FD
BFS17W
BFS17A
BGA2712
BGA2709
BFQ19
BFQ18A
BFQ149
BA278
BGA2711
BGA2748
BGA2771
BGA2776
BAP51-02
BAP51-05W
BAP50-02
BAP63-02
BAP65-02
Package
SOD523
SOT343
SOT23
SOD523
SOD323
SOT363
SOD323
SOD523
SOT343
SOT363
SOD323
SOT363
SOT363
SOT343
SOD323
SOT343
SOT363
SOD323
SOT363
SOT343F
SOT363
SOT89
SOT223
SOT223
SOT223
SOT223
SOT223
SOT223
SOT223
SOT223
SOT223
SOT223
SOT223
SOT223
SOT363
SOT363
SOT363
SOT363
SOD323
SOD323
SOT23
SOT23
SOT23
SOT323
SOT23
SOT363
SOT363
SOT89
SOT89
SOT89
SOD523
SOT363
SOT363
SOT363
SOT363
SOD523
SOD523
SOD523
SOD523
SOD523
Marking code
K7
K8
K9
L1
L2
L2
L2%
L3
L3%
L4
L4%
L5
L6
L6%
L7
L8
L8
L9%
LA
LA
LA%
LB%
LD%
LE
LE%
LF%
LG%
LH%
LK%
M08
M09
M1%
M10
M2%
M2%
M26
M27
M28
M29
M3%
M33
M33
M34
M34
M35
M41
M42
M6%
M65
M66
M67
M74
M84
M85
M86
M91
M92
MB
MC
MD
Type
BAP1321-02
BAP70-02
BB199
BB202LX
BAP51LX
BB202
BF1203
BB178LX
BF1204
BB179LX
BF1205
BB179BLX
BB181LX
BF1206
BB182LX
BA792
BB187LX
BF1208
BB185LX
BF1201WR
BF1201
BF1201R
BF1202
BF1202WR
BF1202R
BF1211
BF1212
BF1211R
BF1212R
PMBFJ308
PMBFJ309
BFR30
PMBFJ310
BF1207
BFR31
BF908
BF908R
BF909
BF909R
BFT46
BF861A
BF909A
BF861B
BF909AR
BF861C
BF904A
BF904AR
BF1205C
BF545A
BF545B
BF545C
BSS83
BF556A
BF556B
BF556C
BF991
BF992
BF998WR
BF904WR
BF908WR
Package
SOD523
SOD523
SOD523
SOD882T
SOD882T
SOD523
SOT363
SOD882T
SOT363
SOD882T
SOT363
SOD882T
SOD882T
SOT363
SOD882T
SOD110
SOD882T
SOT363
SOD882T
SOT343
SOT143
SOT143
SOT143
SOT343
SOT143
SOT143
SOT143
SOT143
SOT143
SOT23
SOT23
SOT23
SOT23
SOT363
SOT23
SOT143
SOT143
SOT143
SOT143
SOT23
SOT23
SOT143
SOT23
SOT143
SOT23
SOT143
SOT143
SOT363
SOT23
SOT23
SOT23
SOT143
SOT23
SOT23
SOT23
SOT143
SOT143
SOT343
SOT343
SOT343
Marking code
ME
MF
MG
MG%
MH
MH%
MK
ML
MO%
MO%
MO4
MO6
N
N0
N0%
N0%
N1
N2
N2%
N2%
N28
N29
N3
N30
N33
N36
N37
N38
N39
N4
N4
N4%
N42
N43
N44
N48
N49
N6%
N7
N71
Type
BF909WR
BF1100WR
BF909AWR
BF994S
BF904AWR
BF996S
BF1211WR
BF1212WR
BF998
BF998R
BF904
BF904R
BB181
BFR505T
BFM505
BFS505
BFG505W/X
BFR520T
BFM520
BFS520
BFR520
BFR540
BFG520W
BFR505
BFG505
BFG520
BFG540
BFG590
BFG505/X
BFG520W/X
BFQ540
BFS540
BFG520/X
BFG540/X
BFG590/X
BFG520/XR
BFG540/XR
BFS25A
BFG540W/X
BFG10/X
Package
SOT343
SOT343
SOT343
SOT143
SOT343
SOT143
SOT343
SOT343
SOT143
SOT143
SOT143
SOT143
SOD523
SOT416
SOT363
SOT323
SOT343
SOT416
SOT363
SOT323
SOT23
SOT23
SOT343
SOT23
SOT143
SOT143
SOT143
SOT143
SOT143
SOT343
SOT89
SOT323
SOT143
SOT143
SOT143
SOT143
SOT143
SOT323
SOT343
SOT143
Marking code
N8
N9
N9%
NA
NA%
NB
NB%
NC
NC%
ND
ND%
NE
NE%
NF%
NG%
NH%
P08
P09
P1
P1
P10
P11
P12
P13
P2%
P2%
P3
P4
P5
P5
P6
P7
P8
P9
PB
PC
PE
PF
PL
R2%
Type
BFG540W/XR
BFG540W
BAP70AM
BF1105WR
BF1105R
BF1109WR
BF1109R
BF1101WR
BF1101R
BFG424W
BF1101
BFG424F
BF1105
BF1109
BF1108
BF1108R
PMBFJ108
PMBFJ109
BB131
BFG21W
PMBFJ110
PMBFJ111
PMBFJ112
PMBFJ113
BFR92A
BFR92AW
BFG403W
BFG410W
BB135
BFG425W
BFG480W
BB147
BB148
BB149
BB152
BB153
BB155
BB156
BB149A
BFR93A
Package
SOT343
SOT343
SOT363
SOT343
SOT143
SOT343
SOT143
SOT343
SOT143
SOT343
SOT143
SOT343
SOT143
SOT143
SOT143
SOT143
SOT23
SOT23
SOD323
SOT343
SOT23
SOT23
SOT23
SOT23
SOT23
SOT323
SOT343
SOT343
SOD323
SOT343
SOT343
SOD323
SOD323
SOD323
SOD323
SOD323
SOD323
SOD323
SOD323
SOT23
Marking code
R2%
R5
R7%
R8%
S
S1%
S2%
S2%
S3%
S6%
S7%
S8%
S9%
SB%
SC%
T5
V1
V1%
V10
V11
V12
V14
V15
V2%
V2%
V3%
V4%
V6%
V8
W1
W1%
W1%
W2%
W4%
W6%
W7%
W9%
X
X1%
X1%
Type
BFR93AW
BFR93AR
BFR106
BFG93A
BAP64-02
BFG310/XR
BBY40
BFG325/XR
BF1107
BF510
BF511
BF512
BF513
BF1214
BB201
BFG10W/X
BFG25AW/X
BFT25
BFT25A
BFG25A/X
BFG67/X
BFG92A/X
BFG93A/X
BFQ67
BFQ67W
BFG67
BAP64-06W
BAP65-05W
BAP1321-03
BF1102
BFT92
BFT92W
BF1102R
BAP50-05W
BAP51-04W
BAP51-06W
BAP63-05W
BB187
BFT93
BFT93W
Package
SOT323
SOT23
SOT23
SOT143
SOD523
SOT143
SOT23
SOT143
SOT23
SOT23
SOT23
SOT23
SOT23
SOT363
SOT23
SOT343
SOT343
SOT23
SOT23
SOT143
SOT143
SOT143
SOT143
SOT23
SOT323
SOT143
SOT323
SOT323
SOD323
SOT363
SOT23
SOT323
SOT363
SOT323
SOT323
SOT323
SOT323
SOD523
SOT23
SOT323
NXP Semiconductors RF Manual 10th edition
79
7. Contacts and web links
How to contact your authorized distributor or local NXP representative
Authorized distributors
Asia Pacific:
http://www.nxp.com/profile/sales/asia_pacific_dist
Europe / Africa / Middle East:
http://www.nxp.com/profile/sales/europe_dist
North America:
http://www.nxp.com/profile/sales/northamerica_dist
South America:
http://www.nxp.com/profile/sales/southamerica_dist
Local NXP Offices
Asia Pacific:
http://www.nxp.com/profile/sales/asia_pacific
Europe / Africa / Middle East:
http://www.nxp.com/profile/sales/europe
North America:
http://www.nxp.com/profile/sales/northamerica
South America:
http://www.nxp.com/profile/sales/southamerica
80
NXP Semiconductors RF Manual 10th edition
Web links
NXP Semiconductors:
http://www.nxp.com
NXP RF applications:
http://www.nxp.com/rf
NXP RF Manual web page:
http://www.nxp.com/rfmanual
NXP application notes:
http://www.nxp.com/all_appnotes
NXP varicaps:
http://www.nxp.com/varicaps
NXP cross-references:
http://www.nxp.com/products/xref
NXP RF PIN diodes:
http://www.nxp.com/pindiodes
NXP green packaging:
http://www.nxp.com/green_roadmap
NXP RF Schottky diodes:
http://www.nxp.com/rfschottkydiodes
NXP end-of-life:
http://www.nxp.com/products/eol
NXP RF MMICs:
http://www.nxp.com/mmics
NXP Quality Handbook:
http://www.standardics.nxp.com/quality/handbook
NXP RF wideband transistors:
http://www.nxp.com/rftransistors
NXP literature:
http://www.nxp.com/products/discretes/documentation
NXP RF FETs:
http://www.nxp.com/rffets
NXP packaging:
http://www.nxp.com/package
NXP RF CATV electrical & optical:
http://www.nxp.com/catv
NXP sales offices and distributors:
http://www.nxp.com/profile/sales
NXP optical networking:
http://www.nxp.com/opticalnetworking
NXP Semiconductors RF Manual 10th edition
81
th
1
0
ed
ition
10
th
editio
n
t
h
1
0
e
d
th i t i o n
RF manual 10 edition
10
Application and design manual for RF products
TH
September 2007
www.nxp.com
©2007 NXP B.V.
All rights reserved. Reproduction in whole or in part is prohibited without the prior written
consent of the copyright owner. The information presented in this document does not
form part of any quotation or contract, is believed to be accurate and reliable and may be
changed without notice. No liability will be accepted by the publisher for any consequence
of its use. Publication thereof does not convey nor imply any license under patent- or other
industrial or intellectual property rights.
Date of release: September 2007
Document order number: 9397 750 16105
Printed in the Netherlands
EDITI
ON

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