Power MOSFET IRFZ40, SiHFZ40

IRFZ40, SiHFZ40
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
• Dynamic dV/dt Rating
60
RDS(on) ()
VGS = 10 V
• 175 °C Operating Temperature
0.028
67
• Fast Switching
Qgs (nC)
18
• Ease of Paralleling
Qgd (nC)
25
• Simple Drive Requirements
Qg (Max.) (nC)
Configuration
Single
• Compliant to RoHS Directive 2002/95/EC
D
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220AB package is universially preferred for
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
TO-220AB
G
G
S
D
S
N-Channel MOSFET
ORDERING INFORMATION
Package
TO-220AB
IRFZ40PbF
SiHFZ40-E3
IRFZ40
SiHFZ40
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
60
Gate-Source Voltage
VGS
± 20
Continuous Drain Currente
Continuous Drain Current
VGS at 10 V
TC = 25 °C
TC = 100 °C
Pulsed Drain Currenta
ID
IDM
Linear Derating Factor
Single Pulse Avalanche Energyb
Maximum Power Dissipation
Peak Diode Recovery
TC = 25 °C
dV/dtc
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d
Mounting Torque
for 10 s
6-32 or M3 screw
UNIT
V
50
36
A
200
1.0
W/°C
EAS
100
mJ
PD
150
W
dV/dt
4.5
V/ns
TJ, Tstg
- 55 to + 175
300
°C
10
lbf · in
1.1
N·m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 °C, L = 44 µH, Rg = 25 , IAS = 51 A (see fig. 12).
c. ISD  51 A, dI/dt  250 A/µs, VDD  VDS, TJ  175 °C.
d. 1.6 mm from case.
e. Current limited by the package, (die current = 51 A).
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91385
S11-0520-Rev. B, 21-Mar-11
www.vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Document Number: 91385
S11-0520-Rev. B, 21-Mar-11
www.vishay.com
5
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
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asTd-.0008 Tc547
Revision: 02-Oct-12
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Document Number: 91000