Plasmaphysik VII

Transcription

Plasmaphysik VII

Plasmaphysik VII
Reaktives Ionenätzen
Gerhard Franz
ISBN 978-3-943872-03-3
16. Dezember 2015
Inhaltsverzeichnis
1 Trockenätzverfahren I
1.1 Niederdruckplasmen ⇔ Mikrostrukturtechnik . . . . . . . . . . . . . . .
1.2 Anlagen . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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4
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2 Trockenätzverfahren II
2.1 Reaktives Ionenätzen? . . . . . . . . . . . . . . . . . . . . . . . . . . .
2.2 CAIBE: Experimental Facts and Interpretation . . . . . . . . . . . . . .
2.3 Schlußfolgerung . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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13
18
3 Trockenätzverfahren III
3.1 Anisotropie . . . . . . . . . . . .
3.1.1 Direktionalität . . . . . .
3.1.2 Seitenwandpassivierung .
3.2 Selektivität . . . . . . . . . . . .
3.2.1 Selektivität: Volatilität des
3.2.2 Facettierung . . . . . . .
3.2.3 Metallmasken . . . . . .
3.2.4 Trilevel-Technik . . . . .
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Ätzprodukts
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4 Trockenätzverfahren IV
4.1 Loading-Effekt . . . . .
4.2 Micro-Loading . . . . .
4.3 Redeposition . . . . . .
4.4 Trenching . . . . . . .
4.5 Microfeatures . . . . . .
4.5.1 Shadowing . . .
4.5.2 Bowing, RIE-Lag
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Notching
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(ARDE),
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5 Trockenätzverfahren V
5.1 Endpunktkontrolle . . . . . . . . . . . . . . . .
5.1.1 Änderung der Impedanz einer Entladung
5.1.2 Ellipsometrie . . . . . . . . . . . . . . .
5.1.3 OES . . . . . . . . . . . . . . . . . . .
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Inhaltsverzeichniss
5.1.4
5.1.5
5.1.6
5.1.7
Interferometrische Verfahren . . . . . .
CCD-kontrollierte Laserinterferometrie
Massenspektrometrie (MS) . . . . . .
Probleme des in-situ-Monitoring . . . .
Literaturverzeichnis
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48
50
51
51
53
2
Inhaltsverzeichnis
3
4
1.1 Niederdruckplasmen ⇔
Mikrostrukturtechnik
Ion Beam Etching
with Ar (DC)
anisotropic etching
low selectivity
poor etch rate
sputter yield at 60 Æ
poor efficiency
massive damage
MW-CCP
2.45 GHz
Ashing with O2
very soft etching
very low etch rates
no anisotropy
RF-Sputtering
13.56 MHz
option. w. Magnetron
with Ar
sputtering of dielectrics
downstream
reactive
MW
capacitive coupling R ?
capacitive
coupling
?
RF-Ion Etching
with Ar
for large areas
Reactive Sputtering
CCP-RF
Oxides from Metals
capacitive
coupling
“hot” electrode
R
CCP-RIE: (ME) “ RIE”
13.56, 27.12 MHz
ne 109 /cm3
antenna
anisotropic, selective etch. coupling
prone to high damage
HeliconDischarges
static
13.56 MHz
ne 1012 /cm3
Introduction of
static resonant excit.
Magnetic Fields
R
6
RF
?
Ion Beam Etching
with ICP-RF
mainly 2 MHz
reactive, soft
anisotropic processes
RF
?
static
R
ICP-RIE
2 or 13.56 MHz
non-resonant excit.
ne 1012/cm3
reactive, soft, anisotropic
very high etch rates
?
ECR-RIE
2.45 GHz
resonant excitat.
ne 1012 /cm3
reactive, soft, anisotropic
very high etch rates
Abb. 1.1. Flow Diagram for Mutual Development of Excitation Methods and Reactive Processes
5
CCP-IE
RF: PE, RIE, MERIE
MW: PE
t
ICP-IE
t
Plasma Etching
t
IBE
RIBE
CAIBE
t
MW-RIE
ECR-RIE
CCP, Capacitively Coupled Plasma;
ECR, Electron Cyclotron Resonance, downstream;
ICP, Inductively Coupled Plasma, downstream;
MW, Micro Wave (2.45 GHz);
PE, Plasma Etching: p > 75 mTorr (10 Pa): sample on grounded electrode;
IE, Ion Etching,
RIE, Reactive Ion Etching: p <50 mTorr (7 Pa), sample on powered electrode;
IBE, Ion Beam Etching;
MERIE, Magnetically Enhanced Reactive Ion Etching: RIE; electrons are
suppressed to reach the sample’s surface by means of a magnetic field;
CAIBE, Chemical Assisted Ion Beam Etching;
RIBE, Reactive Ion Beam Etching.
Abb. 1.2. Various dry etching methods. They mainly differ in the excitation method.
6
Sputtering
RF
DC-Magnetron
t
t
IBC
Dielectrics, Metals
Diamond, DLC
Plasma Coating
t
PECVD
Dielectrics, Metals
Diamond, DLC
t
Ion-Plating
Dense Metals
PECVD, Plasma Enhanced Chemical Vapour Deposition: p ≥ 1000 mTorr
(130 Pa): sample on grounded electrode;
IBC, Ion Beam Coating;
Ion Plating: p < 1 mTorr, evaporation of very dense metal on a sample atop
a powered electrode;
Abb. 1.3. Various dry coating methods. They mainly differ in the excitation method.
7
1.2 Anlagen
HohlraumResonator
Quarz-Zylinder
Faraday-Käfig
Magnetron
Wafer auf
Waferschlitten
Plasmakammer
Abb. 1.4. Tunnelreaktor, der bei Verwendung eines Faraday-Käfigs ideales isotropes Plasc Technics Plasma GmbH 1990).
maätzen erlaubt (
8
Spiegel
MFCs
Gaseinlaß
Einloch-Gasdusche
Langmuir-Sonde
SEERS-Sensor
Wafer
RIE-Reaktor
Pumpensystem
Ar
BCl3
Cl
Cl22
BCl
ACH34
CH
Ar
HH22 4
O
O2
Anode 2
Glasfaser
Zweilinsensystem
Monochromator
Photomultiplier +
Photodioden-Array
HR-Gitter
Heiße Elektrode
RF
RF
RF-Generator +
Anpaßnetzwerk
Computer
Abb. 1.5. Parallelplatten-Reaktor mit aufwendiger Plasmadiagnostik: Langmuir-Sonde,
SEERS-Sensor, optische Emissionsspektroskopie mit Gitter und Multidetektorbank (OMA).
Meist ist auch ein Massenspektrometer zur Restgasanalyse (RGA) und Lecksuche angeflanscht.
9
RF generator
13.56 MHz
CH4
p-network
BCl3
ICP coil
Faraday shield
gas ring
Cl2
H2
O2
Ar
SEERS
Langmuir
OES
substrate electrode with
He-backside cooling
RF generator
2 - 13.56 MHz
L-network
Abb. 1.6. ICP-Reaktor mit Faraday-Abschirmung und kapazitiv angekoppelter Elektrode.
10
Reaktivgaseinlaß (CAIBE-Verfahren)
Ionenstrahlquelle
Einschwenkbare
Ionenstrom-Meßblende
Reaktivgaseinlaß
(RIBE-Verfahren)
Schleusenventil
Prozeßkammer mit
Schleusenfunktion
Ionenstrahl
Argon
Rotierender, wassergekühlter, von 0-90° kippbarer Substratteller
Beschleunigungsgitter
Substrate
Turbomolekularpumpe
Einschwenkbare
Prozeßkammer in
Strahlprofilsonde
geöffneter Position
Vorpumpe
Abb. 1.7. Principal sketch of a CAIBE system. Ions are generated in a plasma source (DC:
Kaufman, ECR or ICP) extracted and accelerated through a lens system and hit a target —
the substrate. From the CAIBE shower head, reactive gas is bled into the vacuum and supports
the etching.
2.1 Reaktives Ionenätzen?
Ion-Assisted Chemical Etching
Mask
Sputtering
Reactive Ion Etching
Mask
Chemical
Etching
Gold
Gold
Platinum
Platinum
Titanium
Substrate
(GaAs)
Abb. 2.1. Dry etching can consist of at least 4 different processes:
(1) Sputtering with ions and fast neutrals,
(2) spontaneous chemical etching with neutrals,
(3) ion-assisted chemical etching with neutrals,
(4) and “realreactive ion etching.
11
Titanium
12
1. Sputtering according to Sigmunds theory exhibiting for most lattices an angular
maximum of the sputter yield around 60◦ [442]: k1 .
2. Isotropic spontaneous etching: k2 .
3. Ion-assisted chemical etching with 2 mutual alternatives leading to a maximum of
the angular yield of 90◦ . In either case, the reaction will strongly depend on the
absorption of reactive neutrals: k3 . Hence, this reaction type can be modelled using
Langmuirs adsorption theory:
• Adsorption of neutrals on a clean surface and subsequent reaction to weakly
bound species will enhance the sputtering yield at normal incidence (Sigmunds theory cannot be valid, because these species are no part of the host
lattice!) or may lead to enhanced thermal evaporation either
• ions will generate a damaged surface (which is most effective for normal incidence), and the reactive species will easily dock at the highly reactive site and
react to (volatile) compounds.
4. Reactive ions (k4 )
• transfer momentum to the surface and cause a collision cascade which eventually leads to sputtering events and they
• supply reactive species to the surface which form chemical bonds to new compounds which have a lower surface binding energy to the host lattice and can
easily be sputtered away.
ER = k1 jCF+x + k2 jCF4 + k3 jCF4 jCF+x + k4 jCF+x ,
(15.1)
2.2 CAIBE: Experimental Facts and Interpretation
13
1750
1000
1250
ion energy [eV]
1000
selectivity
750
500
750
250
500
250
0
selectivity
ion energy [eV]
1500
0
1
10
100
1000
discharge pressure [mTorr]
Abb. 2.2. Due to different pressure and incident energies, we can roughly differentiate several
regimes of etching. Ion energy and selectivity mainly behave mutally complementary. For real
reactive ion etching, very high plasma desities are required.
Tab. 2.1. The (at least) 4 different processes can be distinguished in principle by these
criteria.
Method
Ion-Induced
Sputtering
Rate Equation
k1 jCF+x
Non-Arrhenius
Selectivity
poor
Profile
mainly anisotropic
Chemical
Etching
k2 jCF4
Arrhenius or
Non-Arrhenius
extremely
high
isotropic,
sensitive to
crystall. planes
Ion-Assisted
Chemical Etching
k3 jCF+x jCF4
Non-Arrhenius
high
anisotropic
Reactive Ion Etching
k4 jCF+x
Non-Arrhenius
high
anisotropic
2.2 CAIBE: Experimental Facts and
Interpretation
14
ER = k1 jCF+x + k2 jCF4 + k3 jCF4 jCF+x + k4 jCF+x ,
(15.2)
Kinetics: Which is the rate-limiting step? Is it
• the generation of reactive species in the plasma (gas reaction), or
• is it a step at the surface-site (solid state reaction)?
This can be best clarified using ion beam etching with chemical assistance (CAIBE), since
here the physical and chemical effects are clearly separated.
SiO2 is etched with a beam of Ar+ ions with the chemical assistance of CF4 (Figs.
15.3, 15.4).
Etch yield depends on two parameters: flux of neutrals and energy of ions (Fig. 15.3).
• sharp increase for small neutral gas fluxes, levelling off for higher fluxes;
• more or less linear dependence on the kinetic energy of the projectiles (ions) which
is more pronounced for higher ion energies.
15
SiO2-Ätzrate [10 14 cm -2s -1]
60
0,23
0,15
0,08
0,05
2
mA/cm
50
40
30
20
10
0
0
10
20
30
40
50
Adsorbiertes Gasvolumen [cm 3]
CF x-Fluß [10 16 cm -2s -1]
1,5
1,0
0,5
0,0
Langmuir-Isotherme für
adsorbiertes Gas pro g Adsorbens
0
5
10
15
20
p [mbar]
25
30
Abb. 2.3. Frappierende Übereinstimmung zwischen einer CAIBE-Ätzung von SiO2 mit CF4 mit
der Langmuirschen Adsorptionsisothermen (N2 über Cu-Pulver) [714] [712]. Etch rate of SiO2
in a CAIBE system with CF4 as etchant and CF+
y as parameter. To a very small part, this gas will
decompose to neutrals CFx with unknown composition and to ions CF+
y which will constitute
the ion beam (legend values in mA/cm2 ) [711]. Data are fitted by Mayer and Barker using
a Langmuir adsorption model.
16
Abb. 2.4. Modell der Wechselwirkung von adsorbierten
Cl2 -Molekülen auf einer atomar
reinen Silicium-Oberfläche, die
dem Beschuß von Ar+ -Ionen
ausgesetzt ist.
Si
Cl2
Ar+
10,0
Ätzrate [1014s-1]
7,5
0,05 mA/cm
5,0
2
Gesamt-Ätzrate
chemische Ätzrate
physikalische Ätzrate
2,5
0,0
0
20
40
60
80
100
p [mTorr]
Abb. 2.5. Calculated CAIBE etch rate of SiO2 in an Ar discharge with CF4 downstream-flow
for different ion beam densities.
10
17
100
E
6
total etch rate
physical fraction
chemical fraction
chemical fraction [%]
4
2
0
0
10
20
30
16
-2 -1
CFx flux [10 cm s ]
40
97
100
5
ER [10 15 atoms cm -2 s-1]
98
99
0.05 mA/cm2
4
90
0.25 mA/cm2
3
total etch rate
physical fraction
chemical fraction
2
80
1
ER [1014 atoms cm 2 s-1]
8
70
0
0
10
20
30
16
-2 -1
CF4 flux [10 cm s ]
40
Abb. 2.6. Die vollständige Ätzrate kann nach Gln. (12.7) als aus einem chemischen und physikalischen Teil zusammengesetzt angenommen werden. Mit zunehmender Ionenstrahldichte gewinnt
der physikalische Teil mehr und mehr an Bedeutung. Man beachte den zunehmenden Maßstab
der y-Achse! Dargestellt ist die Ätzrate von SiO2 in einer IBE-Entladung von CF4 nach den
Daten von Mayer und Barker [714].
18
2.3 Schlußfolgerung
Konventionelles RIE ist in Wirklichkeit ionenunterstütztes chemisches
Ätzen:
Si + CF4 −→ SiF4 + C.
(15.3)
• Typische Plasmadichte eines kapazitiv gekoppelten RF-Plasmas:
1010 /cm3 ⇒
• Ionenfluß: ≈ 1015 /cm2 sec (etwa Ar-Plasma, Te : 3, 5 eV, nP : 1 · 1010
cm−3 , ji : 2 · 1015 /cm2 sec), etwa 0,15 mA/cm2 .
• Mittlere Ätzraten von 100 nm/min = 16,7 Å/sec:
• Abgetragene Si-Atome/Ion: etwa 3.
• Notwendige Anzahl von Halogenatomen: 10.
• SiF4 -Fluß, der zehnmal so hoch ist.
3.1 Anisotropie
WF
W0
Isotropes Profil
Maske
zu
ätzende
Schicht
Substrat
M0
q
W0
dV
dh MF
q
Konisches Profil
positiver
Böschungswinkel
Maske
zu
ätzende
Schicht
M0
Substrat
q
W0
MFF
dV
dh
Konisches Profil
Konisches
Profil
negativer
Böschungswinkel
MF
Maske
zu
ätzende
Schicht
M0
Substrat
Anisotropes Profil
W0
Abb. 3.1. Ätzprofile für rein isotrope, rein anisotrope und in der Charakteristik dazwischen
liegende konische“ Ätzung mit positivem oder negativem Böschungswinkel. W ist der Mas”
kenabstand, M die Maskenbreite, der Index 0 vor, der Index F nach der Ätzung. dh ist der
horizontale ( Unterätzung“), dv der vertikale Abtrag. Der Konuswinkel Θ ist der arctan dv /dh
”
c Academic Press).
[588] (
• dh ist der horizontale Abtrag ( Unterätzung“),
”
• dv der vertikale Abtrag.
•
dv
dh
bzw. die Differenz 1 −
Aspektverhältnis“ A.
”
dh
dv :
Anisotropieverhältnis“ oder auch
”
• Rein anisotrope Ätzung: A = ∞ ∨ 1,
• rein isotrope Ätzung: A = 1 ∨ 0.
19
20
x
Maske
1,5
2,5
2
1
h
Substrat
Abb. 3.2. Beim isotropen Ätzen kann die Maske stark unterätzt werden. Eine Unterätzung von
100 % (x/h = 1) bis zu 250 % (x/h = 2, 5) täuscht einen Gang zu höherer Anisotropie lediglich
vor. Daher ist der Bezug auf ein (x, y, z)-Normal erforderlich, wie es sich zwangsläufig durch die
c The American Chemical Society).
nicht angegriffene Maskenstruktur ergibt [590] (
3.1 Anisotropie
21
3.1.1 Direktionalität
Von welchen Größen hängt das Anisotropieverhältnis ab?
• Verhältnis der Flüsse Neutralteilchen/Ionen
• Spontane Ätzung −→ horizontale Unterätzung
• Deposition an den Seitenwänden (Passivierung)
• Desorption von Reaktionsprodukten (Temperatur, Druck)
Tab. 3.1. Ätzung von Silicium in CF4 : Abhängigkeit der Ionenenergie, Fluorfluß und Anisotropie von verschiedenen Parametern.
Parameter Änderung
Druck
RF-Power
Beladung
H2
O2
Anstieg
Anstieg
Anstieg
Anstieg
Anstieg
Zielgröße
F-Fluß
EIon / < E > Anisotropie
Zunahme
Abnahme
Abnahme
Zunahme?
Anstieg
Zunahme
Abnahme
Zunahme
Abnahme
Zunahme
Zunahme
Abnahme
22
60
ER [nm/min]
50
40
SiO2
Si
30
20
10
0
0
10
20
30
40
H2-Anteil in CF4 [%]
Abb. 3.3. In CF4 nimmt die Ätzrate von Si mit steigendem H2 -Anteil im Ätzgas stärker ab als
c IBM).
die von SiO2 . [727] (
3.1 Anisotropie
DC bias [-V]
200
150
100
23
C2F4
H2 addition
polymerization
C4F10
C2F6
CF4
O2 addition
etching
50
0
1
2
3
F:C-ratio of etching species
4
Abb. 3.4. Schematische Darstellung des Einflusses des F:C-Verhältnisses im reaktiven Gas und
des DC-Bias auf die Reaktionsverläufe auf der Substratoberfläche. Erhöhte Beladung führt wie
c IBM).
Wasserstoffzugabe zu stärkerer Polymerbildung [727] (
24
3.1.2 Seitenwandpassivierung
Abb. 3.5. CCP-RIE von GaP in Cl2 : wegen fehlender Seitenwandpassivierung beobachtet man
spontanes horizontales Ätzen, was zu einem nahezu isotropen Ätzprofil Anlaß gibt.
3.1 Anisotropie
25
Tab. 3.2. Seitenwandpassivierung: Beispiele, Filmzusammensetzung und Mechanismen.
System
Film
Ätzgas
Aluminium
CCl4
(CClx )∞
GaAs
BCl3 /Cl2 (BCl2 )∞
InP
CH4 /H2 (CH2 )∞
Silicium
CF4 /O2
SiOx
Silicium
CF4
(CF2 )∞
Mechanismus
Kommentar
Polymerbildung
Polymerbildung
Polymerbildung
Oxidation
schwierig bei PR
Polymerbildung
hohe Drücke
26
O
B
10 µm
Cl
à Intensity
Abb. 3.6. Die im oberen REM-Bild dargestellten, etwa 20 µm tief geätzten Quader weisen
wegen Seitenwandpassivierung eine senkrechte Ätzflanke auf. Der Film besteht überwiegend aus
polymerem (B2 Cl4 )∞ , was durch TOF-SIMS (unten) nachgewiesen werden konnte: Auf dem
geätzten Quader ist die Oberflächen-Konzentration des Sauerstoffs deutlich niedriger als die des
Chlors. Da chemisch weder aus Gallium- noch aus Boroxid ein Chlorid entstehen kann, muß sich
dieses vorher, also während des Ätzprozesses, gebildet haben.
3.2 Selektivität
27
3.2 Selektivität
• Verhältnis der Ätzraten zwischen Maske und Substrat ⇒
Maskenerosion, Facettierung
• Sandwichstruktur des Substrats
• Ungleichmäßige Schichtdicke
– Endpunktkontrolle
– Umschalten auf anderen Ätzprozeß
3.2.1 Selektivität: Volatilität des Ätzprodukts
• PR-Veraschen auf Dielektrika, Halbleitern und Metallen: Ätzstopp auf dem Substrat
• PR-Strukturieren in einem O2 -Plasma mit SiO2 - oder Si3 N4 Maske Trilevel-Technik
Thermodynamische Selektivität
• Endotherme Reaktionen laufen langsamer ab als exotherme:
• Si/SiO2 mit Cl2 :
Si + Cl2 −→ SiCl4 ∆H < 0.
SiO2 + Cl2 −→ SiCl4 + O2 ∆H > 0.
28
3.2.2 Facettierung
normal. Ätzrate
1,00
0,75
0,50
0,25
0,00
0
30
60
Strahlwinkel f [°]
90
q1
q2
q3
Abb. 3.7. Die Ätzrate (ER) hängt entscheidend vom Einfallswinkel auftreffender Ionen ab. Die
Tatsache, daß Oberfläche und Seite der Maske meist nie im rechten Winkel aufeinandertreffen,
bedingt eine höhere Ätzrate im Top“-Bereich, wodurch die Steilheit der Maske während des
”
Ätzprozesses weiter reduziert wird: Facettierung mit nachfolgender Konusbildung (nach [499]
c Philips).
3.2 Selektivität
29
Abb. 3.8. Der Böschungswinkel der geätzten Seitenwände ist wegen der Facettierung meist
positiv: Tapering“ von InP in Ethan/Wasserstoff 10:40, 5 Pa, 0,25 W cm−2 . Man beach”
te die geriffelte Seitenwand, die durch exakte lithographische Übertragung des Maskenrandes
(gesputtertes Al2 O3 ) in den Halbleiter entstanden ist [623].
30
3.2.3 Metallmasken
ER(q)/ER(0)
2,5
2,0
Ti
1,5
Mo
1,0
0,5
0
20
40
Strahlwinkel q [°]
60
Abb. 3.9. Verschiedene refraktäre Metalle eignen sich wegen der schwachen Winkelabhängigkeit ihrer Ätzrate und der damit verbundenen geringen Anfälligkeit zur Facettierung besonders
c The American Institute of Physics).
als Maskenmaterial. (EIon = 1 keV) [624] (
3.2 Selektivität
31
Abb. 3.10. Oberstes Erfordernis für eine winkelgenaue Übertragung ist die Ätzresistenz der
Maske. So bestimmt der Inzidenzwinkel der (Rest-)Maske den Neigungswinkel im Substrat entscheidend, hier dargestellt an einer Sandwich-Kegel- bzw. Zylinderstruktur in AlGaAs/GaAs.
Maske aus PR.
32
3.2.4 Trilevel-Technik
Schichtfolge
nach PR-Lithographie
Struktur-Resist
Dielektrische Schicht
Bottom-Resist
Substrat
nach CF4/O2-RIE
nach O2-RIE
Abb. 3.11. Trilevel-Photoresist-Technik:
- Aufschleudern eines sehr dicken Photolacks (AZ 4562, 8 − 10 µm): Bottom-Resist
- Ausheizen bei sehr hohen Temperaturen (180 ◦ C
- Sputtern einer dielektrischen Schicht SiO2 oder Si3 N4 (200 nm)
- Aufschleudern und Lithographie des Struktur-Resists
- CF4 /O2 -RIE: Strukturieren der dielektrischen Schicht
- O2 -RIE: Strukturieren des Bottom-Resists und Entfernen des Struktur-Resists.
3.2 Selektivität
33
Abb. 3.12. Trilevel-Photoresist-Technik mit AZ 4562 Bottomresist, 200 nm SiO2 und AZ 5214.
34
Abb. 3.13. Durch die Verwendung eines Trilevel-Photoresists (oben, dunkel) mit spezieller
Glättungstechnik der Photolackkanten wurde es möglich, das sehr ätzresistente GaN/AlGaN
(unten, hell) mit senkrechten, extrem glatten Facetten zu ätzen [600] [417] [625].
• Makroskopischer Loading-Effekt
• Mikroskopischer Loading-Effekt
• Redeposition
• Microfeatures
35
36
250
ER [nm/min]
200
1000 W
150
500 W
100
300 W
50
150 W
0
0
100
200
300
400
A [cm 2]
Abb. 4.1. Die Ätzrate kann signifikant von der Menge oder der Beladung des zu ätzenden
Materials abhängen: Si-Ätzrate in einer CF4 /O2 -Entladung bei 7 Pa und einem Fluß von 11
l/min [605].
4.1 Loading-Effekt
• Der Ätzprozeß ist der Hauptverbraucher des Ätzgases.
• ⇒ durch Erhöhung der eingekoppelten RF-Leistung (also Erhöhung
der Plasmadichte) kann der Loading-Effekt nicht bekämpft werden.
• Der Ätzprozeß an der heißen Scheibe muß von untergeordneter Bedeutung werden.
• Sind Loading“-Effekte vorhanden, muß eine Angabe zum gesamten
”
zu ätzenden Material und der Grenzwert für kleine zu ätzende Flächen
(FA → 0) angegeben werden.
4.2 Micro-Loading
37
4.2 Micro-Loading
PR
PR
PR
Substrat
Substrat
PR
Substrat
Substrat
Abb. 4.2. Die Ätzrate kann signifikant von der Dichte der zu ätzenden Strukturen abhängen,
hier schematisch angedeutet bei einer Trench-Ätzung.
38
4.3 Redeposition
Abb. 4.3. In Argon strukturiertes GaAs nach Ablösung der sehr dicken PR-Maske mit exzellent
ausgeprägten, durch Redeposition entstandenen Hasenohren“ [632].
”
4.3 Redeposition
39
(1) Substrat mit strukturierter Maske
(2) nach der Ätzung
(3) nach Entfernen der Maske
rechtwinkelig
abgerundet
Metall/Oxid
Abb. 4.4. Eine Möglichkeit, Redepositionseffekte zu verringern oder ganz zu unterdrücken,
besteht in der Verrundung der Maske aus PR oder der Verwendung sehr dünner Masken mit
c The American Institute of Physics).
hoher Standzeit [636] (
40
Maske
Maske
Abb. 4.5. Modellhafte Darstellung des Micro- Trenching“ in einem Nest von Gräben (o. lks.)
”
und bei isolierten Gräben und Stegen (u. re.) sowie Grabenbildung an einem isolierten InP-Steg,
der in MeCl/H2 (Verhältnis 10:30, 4 Pa, 0,3 W/cm2 ) geätzt wurde [637].
4.4 Trenching
4.5 Microfeatures
41
Maske
Abb. 4.6. An den bereits herausgeätzten Wänden wird eine Abschattierung der auftreffenden
Ionen beobachtet: Shadowing“, das zur Ausbildung eines breiten Fußes Anlaß gibt: Ätzung
”
eines Vertical-Cavity-Lasers“ aus AlAs/GaAlAs/GaAs mittels RIE, bestehend aus dem oberen
”
Spiegel aus 17 Spiegeltripeln, insgesamt 2,88 µm; dem oberen Spacer“ aus AlGaAS (122 nm);
”
der aktiven Zone aus InGaAs ( Single Quantum Well“ (SQW) 8 nm); dem unteren Spacer“ aus
”
”
AlGaAs (122 nm) und einem Teil des unteren Spiegels, wiederum bestehend aus Spiegeltripeln
aus AlAs/AlGaAs/GaAs (20 − 60 nm dick). Ausgezeichnet unterscheidbar sind insbesondere die Höhenlinien“ des Fußes“. Die Maske, die gleichzeitig als Metallisierung dient, ist der
”
”
Bell-Kontakt“ [601] [470] [471] [472].
”
4.5.2 Bowing, RIE-Lag (ARDE), Notching
mask
_
_
_ + _
_
_
_
_
_
_
_
_
mask
mask
+
_
_
_
Abb. 4.7. Beispiele von unerwünschten Charakteristiken beim Trockenätzen von Slots“ oder
”
Gräben, bedingt durch Aufladungs- und/oder Transportprobleme bei mangelhafter Seitenwandpassivierung. Lks.: Sidewall-Bowing, Mitte: RIE-Lag, re.: Notching beim Auftreffen auf eine
ätzresistente Schicht.
42
Abb. 4.8. ARDE: Die Ätzrate von engen Strukturen (unterhalb eines Verhältnisses Fensterweite/Ätztiefe kleiner als Eins) hängt von der Ätzzeit ab. Dies ist hier dargestellt an Tiefenätzungen
c A. Goodyear Oxford Plasma
in GaAs (der linke Graben ist 77 µm tief, Cl2 /BCl3 -Plasma) Technology, 2003.
1,0
ER/ER(0)
0,9
0,8
Lochdurchmesser
0,9 mm
0,7 mm
0,45 mm
0,3 mm
0,25 mm
0,7
0,6
0,5
0
5
10
15
D
20
25
Abb. 4.9. Für Öffnungsdurchmesser von Slots“ oder Grä”
ben, die gleich oder kleiner als 1
µm sind, hängt die normalisierte Ätzrate linear vom Aspektverhältnis ∆ ab (nach [643]).
5.1 Endpunktkontrolle
• Änderung der Impedanz einer Entladung;
• Ellipsometrie;
• Optische Emissionsspektroskopie (OES);
• Interferometrische Verfahren;
• Massenspektrometrie (MS).
43
44
5.1.1 Änderung der Impedanz einer
Entladung
0,75
lAl
Signal [a. u.]
Start
Endpunkt
0,50
VDC
0,25
0,00
ts ~ 7 sec
0
2
ts ~ 9 sec
4
6
t [min]
8
10
12
Abb. 5.1. Verlauf der optischen Emission und der Impedanz während einer Aluminium-Ätzung.
c
Der Impedanzverlauf ist schärfer definiert als die Änderung der optischen Emission [695] (
The American Institute of Physics).
45
5.1.2 Ellipsometrie
Reflektierter
Lichtstrahl
Wafer
Einfallender
Lichtstrahl
Ionenstrahl
Analysator
Sender
c Veeco Instruments
Abb. 5.2. In-situ-Messung einer Ionenstrahlätzung mittels Ellipsometrie 2002.
46
5.1.3 OES
Kontaktschicht
Cap-Layer
p-dotierter
p-doped
oberer
TopSpiegel
Mirror
aktive
Active
Region
Zone
n-dotierter
n-doped
unterer
Bottom
Mirror
Spiegel
Substrat
Substrate
AlAs
GaAs/AlAs-Superlattice
AlAs/GaAs-Supergitter
GaAs
GaAs
Abb. 5.3. VCSEL (Vertical Cavity Surface Emitting Laser): Prinzipieller Aufbau (lks.) und mit
RIE herausgemeißelte Struktur (re.). Ein typischer VCSEL besteht aus einer etwa 0,2 µm dünnen
aktiven Schicht aus Quantentöpfen, deren Abmessungen und Material die emittierte Wellenlänge
bestimmen, an die sich nach oben und unten sog. Bragg-Spiegel anschließen. Diese bestehen
aus je ca. 20 Paaren von λ/4-Schichten aus AlAs/GaAs.
1,0
rel. Intensität
0,8
0,6
0,4
0,2
0,0
0
10
20
t [min]
30
Abb. 5.4.
OES-Spektrum
(Ga-Linie bei 403,3 nm) einer
VCSEL-Struktur mit oberem
Spiegel aus konsekutiven AlGaAs/AlAs-Schichten, einem
Tripeldecker ( Spacer“), dem
”
sich ein Doppeldecker vor der
aktiven Zone anschließt, in der
die Ätzung beendet sein muß.
47
2 Sammellinsen
Glasfaser zum
Meßgerät
Kleine Probe im Zentrum
der heißen Elektrode
Abb. 5.5. Da die Probenfläche im Verhältnis zur Elektrodenfläche oft sehr klein ist, empfiehlt
sich die Verwendung einer fokussierenden Optik zur Einkopplung des Probenlichts in die Glasfaser
[697].
Tab. 5.1. Gebräuchliche Linien zur Endpunkterkennung mittels OES
zu ätzender
Film
PR
Si
Si3 N4
Si3 N4
SiO2
Al
Al
GaAs
GaAs
GaAs
InP
InP
flüchtige
Komponente
CO
SiF∗
N∗
CN∗
CO
AlCl∗
Al∗
As∗
Ga∗
GaCl∗
In∗
InCl∗
Wellenlänge
[nm]
297,7; 483,5; 519,5
777,0
674,0
388,3
297,7; 458,3; 519,5
261,4; 279,0
396,2
228,9; 235,0; 245,7; 278,0; 286,0
287,4; 403,3; 417,2
249,1; 334,8; 338,5
325,6; 410,1; 451,1 (Fluoreszenz)
267,3; 350,0
48
5.1.4 Interferometrische Verfahren
Strahlteiler
AlGaAs-Laser
Glasfaser
MFCs
x-y-Tisch
Ar
BCl3
Cl 2
Gaseinlaß
H2
Spiegel
Monochromator
Photomultiplier +
Photodioden-Array
Anode
Wafer
Heiße Kathode
RIE-Reaktor
Pumpensystem
HR-Gitter
RF
RF-Generator +
Anpaßnetzwerk
Computer
Abb. 5.6. In-situ-Kontrolle mit der Laser-Interferometrie (LI). Während bei der optischen Emissionsspektroskopie (OES) die zeitliche Abhängigkeit der Intensität der Emissionslinien, hier von
Ga bei
403,3 nm (52 S1/2 → 42 P1/2 ) und
417,2 nm (52 S1/2 → 42 P3/2 ) [700]
verfolgt wird, ist es bei der LI die durch unterschiedliche Brechungsindizes induzierte Variation
in der Reflexion des Lichts eines Festkörperlasers.
49
1,0
0,8
rel. Intensität
Intensität [a. u.]
40
30
0,6
0,4
0,2
20
0
5
10
t [ a. u.]
0,0
0
5
10
15
t [min]
20
25
Abb. 5.7. Eine Endpunkterkennung mit einem Laser-Interferometer (o. re.) und der Vergleich
mit dem vorher berechneten Erwartungsinterferogramm (o. lks.) sowie das Ergebnis als REM-Bild
(u.) [600].
50
5.1.5 CCD-kontrollierte Laserinterferometrie
Datenerfassung
CCD - Kamera
PC
Waferfläche
Shutter zur
Programm-Selektion
Interferometer
Optisches System
• Offen:
1 mm²
Tiefenmessung
Monitor
Laser
Kollimator
Strahlteiler
a
Intensitäts-Tuner
Intensitäts-Tuner
• Geschlossen:
Endpunktbestimmung
Shutter
Referenzspiegel
150 mm
xy -Tisch
(± 25 mm)
Wafer
Kippbarer
Referenzspiegel
zur Erzeugung eines
Interferenzmusters
in der CCD-Matrix
Plasmareaktor
50 mm
Abb. 5.8. Experimenteller Aufbau eines modifizierten Laser-Interferometers nach John et al.
[702]. Bei Verwendung eines Strahlteilers kann eine Zweistrahl-Interferometrie durchgeführt werden. Zum Vergleich wird der Meßstrahl auf den blanken Bereich gelenkt und mit dem Referenzstrahl, der von einem nicht gekippten Spiegel reflektiert wird, analysiert — etwa in einer
CCD-Kamera [702].
Maskierte Oberfläche
> 300 µm
On-Chip-Gebiete zur Analyse
Geätzte Oberfläche
Interferenzmuster
> 150 µm
Layout
Phasenshift
d1
(d )
Referenzfläche
Phasenshift = f ( Ätztiefe)
Pixels
auf dem
CCD-Chip
d2
d
p d/
d = 4pd/l
Meßfläche
Abb. 5.9. Die am Meßstrahl durch Abtastung verschiedener Höhenniveaus entstehende Phasenverschiebung wird durch Interferenz mit einem Referenzstrahl optisch sichtbar gemacht, womit
eine tatsächliche Tiefenmessung gelingt [702].
51
Ätztiefe
Ätzrate
200
relative Intensität [a. u.]
relative Reflektivität
1,0
0,9
Beginn
Ende
0,8
0,7
0,6
0
60
120
180
t [sec]
240
100
50
0
-60
300
Ende Beginn
InGaAs- GaAsÄtzung
150
Ende
GaAsÄtzung
Beginn
InGaAsÄtzung
0
60
120 180 240 300 360 420
t [sec]
Abb. 5.10. Lks.: Darstellung der in-situ gemessenenen Reflektivität (Referenzspiegel nicht im
Strahlengang) eines Spots aus WSiNx (Größe: 1 x 1 µm2 ). Re.: Aus interferometrischen Messungen (Referenzspiegel im Strahlengang) gewonnenes Diagramm der absoluten Ätztiefe und
der zugehörigen Ätzrate in einem Schichtsystem aus InGaAs/GaAs (Cl2 -CCP-Entladung) [702].
5.1.6 Massenspektrometrie (MS)
100
33
I [pA]
PH 2+
AsH +
76
10
1
0
3
2
20
4
40
Meßzyklus
5
60
80
Abb. 5.11. Intensitätsverlauf des
+
PH+
2 - und des AsH -Signals (Massen 33 und 76) eines Multisandwich–
Pakets von InP/InGaAsP, Fläche etwa 1 cm2 , aufgenommen mit einem Quadrex 200 von Leybold,
Sampling-Frequenz 20 sec. Schichtfolge (von lks.): (1) 200 nm InP
( Cap-Layer“, Rest); (2) 300 nm
”
In0,75 Ga0,25 As0,54 P0,46 ; (3) 200 nm
InP; (4) 430 nm In0,53 Ga0,47 As; (5)
InP- Buffer-Layer“ über Substrat.
”
5.1.7 Probleme des in-situ-Monitoring
Abb. 5.12. Ist die Ätzrate
radial nicht uniform, beobachtet man bei der Ätzung eines
Schichtpakets eine Verringerung
der Dynamik der Signale.
52
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Plasmaphysik VII

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