Tobin Marks Presentation
Transcription
Tobin Marks Presentation
Inorganic and Organic/Plastic Photovoltaics Traditional Si Plus Power Efficiency ~ 24.7% lab ~ 16 - 20% market Durable Minus High Module Cost $ 2.38/W Mechanically Rigid, Heavy Other Inorganics CIGS < $ 1.00/W CdTe ~$ 0.86/W a-Si < $ 1.00/W (toxicity, earth abundance issues) Organic (OPV) Plus High-Throughput Mfg. Cheap, Earth-Abundant Materials Mechanically Flexible Tailorable Properties Integrate with Bldg. Materials Large Voc, Optical Absorption Minus Power Efficiency 3 → 10% (Increasing Dramatically!) Durability: Little Data Est. ~$ 0.25/W Possibility of a BreakThrough, of Learning Something Really New! OUTLINE Engineering Interfaces in Organic Photovoltaics Can We Learn from OLEDS? Organic and Inorganic Interfacial Layers New Donor Materials Low Bandgaps, Microstructure on Electrode New Nanoscale Interfacial Layers Transparent Conducting Electrode Materials Opportunities? Where are We? How to Move Ahead? Acknowledgments Henry Yan Michael Irwin Alex Hains Antonio Facchetti Diego Bagnis Jun Liu Brett Savoie Rocio Ortiz Mimi Luo Charusheela Ramanan Jon Servaites Ben Leever Xugang Guo Assunta Marrocchi Stephen Loser Nanjia Zhou Ian Murray BP Solar NREL Bob Chang Lin Chen Mike Wasielewski Mark Ratner Sam Stupp Mark Hersam Mike Bedzyk Art Freeman Luping Yu (U. Chicago) Dave Ginley, Keith Emery (NREL) Mike Durstock (AFML) Fabio Silvestri, Giorgio Pagani (U. of Milano) Juan Bisquert (U. Jaume I) DOE-EFRC ONR NSF-MRSEC I. Organic Photovoltaic (OPV) Challenges How To: • • p-Type Donor h+ h+ e- • en-Type Acceptor h+ TCO h ≥ Eg • Hole-Transporting Layer eV z e- • Capture Maximum Solar Radiation Create Long-Lived Excitons Efficiently Split Excitons, Using Minimum Energy Achieve High Hole & Electron Mobilities Efficiently Extract Charge at the Electrodes Low-Φ metal Terrestrial Solar Spectrum Review: Servaites, J.D.; Ratner, M.A.; Marks, T.J. Energy Environ. Sci., 2011, 4, 4410. OLED Function: Implications for OPVs e- + h+ → exciton → photon Interfaces All Over! Samsung $2.5B in 2011 Spin-Coated Polymer OLED V Metal cathode ORGANIC LAYER hv ITO anode energy [eV] LUMO e- ITO Metal cathode ETL V EML hv h Metal LUMO ehv HTL ITO anode HOMO Polymer energy [eV] Vapor-Deposited Molecular OLED h v+ h+ h HTC, Nokia, Pantech, Motorola, etc. + h+ HOMO ITO HTL EML ETL Metal OLED Frailties. Self-Assembled Interfacial Layers (IFLs) TPD N N N OLED Layer Structure N N N O O Si O O Si O O N Cu N N N Interlayer Interlayer Cu(Pc) Self-Assembled TPDSi2 monolayer Affects of Thermal Stress 50μ TPDSi2 SAM Bare ITO Cu(Pc) Buffer 50 μ Characterization: Synchrotron x-ray reflectivity, AFM, conducting AFM, complex impedance spectroscopy, electrochemistry, molecular substituents Adv. Mater.’04, J. Amer. Chem. Soc. 2005, 2007 Effects of Interfacial Layers on OLED Performance, Durability, Hole Injection Device Layer Structure N N N N N N N N Interlayer O Si O O Interlayer N O Si O O Cu(Pc) Buffer layer TPDSi2 Interfacial layer Electroluminescent Response 5 TPDSi2 4 10 104 Cu(Pc) 0.8 100 Cu(Pc) 0.6 10 10 0.4 1.0 0.2 0.1 0 5 10 15 20 Voltage (v) 25 30 1000 1.0 Bare ITO 100 TPDSi2 TPDSi2 1.2 1000 35 Thermal Stress Affects on EL Response External Quantum Efficiency 1.4 10 0 N Cu Cu(Pc) 1.0 Bare ITO 0 5 10 15 Voltage (v) 20 25 0.1 0 5.0 10 15 20 25 30 Voltage (v) 102 -103 X Enhanced Hole Injection; Impedance: Suppression of Interfacial Defects J. Amer. Chem. Soc. 2005, 2007; J. Appl. Phys. 2006; Chem. Mater. 2007, APL 2008, Org. Electronics 2008 Proposed Organic Photovoltaic Design Based on OLED Experience New TCO materials for alternative anodes IFL Hole-extracting, electron-blocking layer Donor-Acceptor Interface Donor Phase Cathode Anode hv IFL Interfacial stabilizers Acceptor Phase Electronextracting hole/excitonblocking layer IFL Science Issues/ Technology Implications ITO-Alternative TCOs Interfacial Layers Film Growth Approximate Energy Levels for MDMO-PPV:PCBM Cell with 10-15 nm Interfacial Layer (IFL) N N * + TPDSi2 Cl Si Cl Cl N C8H17 * n C8H17 TFB C4H9 Interfacial Layer/Blend Cl Si Cl Cl • Hole transporting/electron blocking interfacial layer μhole = 5 x 10-4 cm2/Vs • Spin coating forms smooth • • • • films TPDSi2 crosslinks in air, films stable to 350ºC Covalently bonds to ITO Insoluble in organic solvents General approach for other OPV donors UPS data : H. Yan, et al J. Am. Chem. Soc. 2005, 127, 3172 OPV Response with Various IFLs Glass/ITO/ TPDSi2:TFB/MDMO-PPV:PCBM/LiF/Al (After Optimization) Control with PEDOT Voc = 0.74 V Jsc = 4.56 mA/cm2 FF = 43.4% PCE = 1.46% TPDSi2:TFB Voc = 0.89 V Jsc = 4.62 mA/cm2 FF = 54.4% PCE = 2.29% (NREL verified) PEDOT + IFL Voc = 1.08 V Jsc = 4.83 mA/cm2 FF = 37.2% PCE= 1.63% Only IFL Cell Survives Heating at 60°C for 1 Hour Appl. Phys. Lett., 2008; ACS Appl. Mater. Interfaces, 2010, Advan. Funct. Mat 2010 NiO as an Inorganic Interfacial Layer PEDOT:PSS Replacement? NiO Film optical spectra NiO • p-Type oxide semiconductor • Transparent in visible at nm thicknesses • Films grown at RT by Pulsed Laser Depostion (PLD) • Φ = 5.3 eV • Highly correlated material Appl. Phys. Lett. 2002, 81, 10, 1899-1901 Grow NiO Films by Pulsed Laser Deposition R.P.H. Chang Optimized NiO Device; 5 – 77nm Films on ITO High Power Conversion Efficiency Dark J-V NREL: 5.6% efficiency for 10 nm NiO device Illuminated J-V Highest 5.2% Chang, Marks, Hersam, Ratner Proc. Nat. Acad. Sci, 2008, 105, 2783; Chem. Mater., 2011, 23, 2218. What Is On the ITO? Electron Microscopy and Selected Area Electron Diffraction: ITO/10 nm NiO/P3HT:PCBM/LiF/Al Electron Diffraction Conclusion: fcc NiO Down to the ITO Surface R.P.H. Chang Synchrotron Grazing Incidence X-Ray Diffraction (GIXRD) ITO/NiO Thin Films GIXRD patterns calculated for randomly oriented NiO films; experimental patterns for 10 nm and 50 nm thick NiO films. Cubic NaCl-type NiO (hkl) reflections labeled accordingly; (111) texturing in the surface-normal direction evident from (111):(200) integrated area ratios for 10 nm NiO film J. Emery, M. Bedzyk Capturing More of the Solar Spectrum: New Active Layer Donor Family PTB7 Yu JACS 2009 PTB7 P3HT PC70BM Voc = 0.744 V Jsc = 15.63 mA/cm2 FF = 62.3% Efficiency = 7.6% Theory: Servaites, Ratner, Marks Energy Environ. Sci., 2011, 4, 4410-4422 Luping Yu, Stephen Loser PTB7 + PCBM Intensity (a.u.) PTB7 P3HT Intensity Intensity(a.u.) P3HT vs. PTB7: Organization & Orientation by GIWAXS Grazing Incidence Wide Angle X-Ray Scattering 1000 1500 1000 500 0 0.2 0.3 qy((Å-1) PTB1 PTB1/PCBM pristine PTB1/PCBM annealed 500 0.4 0.5 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 qz(q(Å (Å-1-1)) 3.7 Å Average domain sizes of 27.3Å with stacks of 6-7 chains Scherrer equation PEDOT:PSS Polymer backbone π planes ┴ to electrode surface Polymer backbone π planes || to electrode surface Dhkl 0.9 hkl cos Chen, Yu J. Phys. Chem. C, 2010 Yu, Chen, Marks, Advan. Mater. 2010 2.0 PTBX OPV Response as a Function of Interplanar Spacing by GIWAXS Black = C60 PCBM Red = C71 PCBM Chen, Yu, Marks Advan. Mater. 2010, 22, 5468–5472. GIWAX: P3HT Orientation on NiO vs PEDOT:PSS • Change in π-π stacking peak location indicates a change in P3HT orientation 2.0 1.5 1.5 on PEDOT:PSS substrate -1 qz (Å ) 2.0 -1 qz (Å ) • Grazing incidence x-ray scattering used to determine P3HT orientation on NiO substrate 1.0 0.5 0.0 1.0 0.5 0.0 0.0 0.5 1.0 1.5 -1 qy (Å ) 2.0 0.0 0.5 1.0 1.5 2.0 -1 qy (Å ) • Change in orientation correlates with increase in PCE of P3HT:PCBM solar cells on NiO (5.2%) vs. PEDOT (3.5%) Face-on alignment on NiO Edge-on alignment on PEDOT:PSS Luo, Zhou, Chang, Chen, Marks, submitted Weaker PTB7 π-π Stacking on NiO vs. PEDOT:PSS • on NiO substrate on PEDOT:PSS substrate 2.0 1.5 1.5 qz (Å ) 2.0 -1 1.0 0.5 0.0 1.0 0.5 0.0 0.0 0.5 1.0 1.5 2.0 0.0 0.5 1.0 1.5 2.0 -1 -1 qy (Å ) qy (Å ) PTB7 π-π stacking peak 300 250 I(Q) (a.u.) -1 qz (Å ) No change in orientation on NiO substrate • Weaker π-π stacking on NiO substrate may be due substrate chemistry or morphology • Corresponding decrease in PCE by 50% on NiO 200 150 PEDOT fit PEDOT NiO fit NiO 100 50 0 1.4 1.5 1.6 -1 Q (Å ) 1.7 1.8 Luo, Zhou, Chang, Chen, Marks, submitted PTB7 Performance with 1 Layer Graphene Oxide Vs. PEDOT:PSS GIWAX: PTB7 π-Stacks on GO GO Hersam, Marks, Chen J. Phys. Chem. Lett., 2011, 2, 3006–3012 PEDOT:PSS vs. Graphene Oxide as OPV Interfacial Layer GO is •More Transparent •Has Higher External Quantum Efficiency Present GO Coating is e- h+ Recombination •“Leakier” •PCE as High as 10%? Hersam, Marks, Chen J. Phys. Chem. Lett., 2011, 2, 3006–3012 OPV Lifetime Enhancement Vs. PEDOT:PSS Using Graphene Oxide Interfacial Layer GO enhances lifetime 5x under thermal stress GO enhances lifetime 20x under humid conditions Encapsulated Unencapsulated Hersam, Marks, Chen J. Phys. Chem. Lett., 2011, 2, 3006–3012 LowD-A Bandgap Polymers Low Bandgap Copolymers Example: Bithiophene Imide-Dithienosilole Donor-Acceptor Copolymers Optical Spectra Inverted BHJ Cell Architecture •Egap = 1.75 eV •HOMO = -5.43 eV •PCE = 5.5 - 8.7 % •Voc > 0.80 V •FF = 62 – 80% Chang, Chen, Marks, Advan. Mater. 2012; J. Amer. Chem. Soc. 2012, in press; 2012 submitted Subtask 2OPV Industrial Single Junction with Collaboration PCE = 9.1% Newport Confirmed! Pristine OPV3 OPV3:PC71BM Current Density / mA/cm 2 20 10 Voc = 800 mV Jsc = 16.2 mA/cm^2 FF = 70% = 9.1% (010) Polymer Donor = OPV3 (100) 0 (001) -10 -20 -0.8 -0.4 0.0 Voltage / V 0.4 0.8 π-stacking peak is along qz axis, so OPV3 exhibits π-face-on alignment. π-stacking distance = 3.7 Å. PC71BM addition enhances OPV3 crystallinity cooperative interaction between OPV3 + PCBM. http://www.polyera.com/newsflash/polyera-achievesworld-record-organic-solar-cell-performance Facchetti (Polyera Corp.), Chen, Marks, Ratner, Hersam New Push-Pull Small Molecule Donor NDT(TDPP)2 OPTICAL XRD TFT TFT NDT(TDPP)2 Single crystal XRD Highly Ordered Films From Solution Neat Film: µh = 7.2 x 10-3 cm2/V·s HOMO/LUMO Energies → Air Stability, Good Voc BHJs with PCBM Highly Ordered (Fabricate in Air) Blend Film: µh = 3.3 x 10-3 cm2/V·s Stupp, Marks J. Amer. Chem. Soc., 2011, 133, 8142; submitted New Push-Pull Small Molecule Donor NDT(TDPP)2 ITO/PEDOT:PSS/1.5:1.0 NDT(TDPP)2:PC61BM/LiF/Al Processable in Air Uses Cheap C60 Acceptor VOC = 0.840.01 V JSC = 11.270.21 mAcm-2 FF = 0.420.02 PCE = 4.060.06% Best PCE = 4.7 – 6.5% NDT(TDPP)2 PCBM Small LUMO-LUMO Offset & FF! Stupp, Marks J. Amer. Chem. Soc., 2011, 133, 8142. Marks, Chem. Commun. 2012, , 48, 8511. Bisquert, Guerrero, Marks, 2012, submitted. Simulation: TCO Anode Resistance vs. Efficiency Cd-In-O ITO J.D. Servaites, T.J. Marks, M.A. Ratner Appl. Phys. Lett., 2009; Adv. Funct. Mater. 2010. CIO/ITO Double-Layer TCO Anodes Tuning CdO Corrosion Resistance and Work Function. Grow ITO by IAD current pathway In-doped CdO (105 nm) TCO1 TCO2 MOCVD Substrate 1 1 1 Rsheet R1 R 2 Substrate Sample Thickness (nm) Sheet Resistance (/□) Transmittance (%) Figure of Merit = T/Rsheet (10-3-1) In-Content (%) CIO 167 5.6 86.4 41 4.3 CIO/ITO (23 nm) 180 5.6 87.1 45 15.8 CIO/ITO (37 nm) 194 6.1 88.0 46 21.4 ITO 130 18.0 95.1 34 90 Lower sheet resistance, ideal for large OPVs Similar optical transparency Smoother surface morphology Tunable work function Higher environment stability Lower cost, reduced In content For Lab-Scale OPVs, Performance ≥ ITO Anode Cells Chem. Mater. ’09, Thin Solid Films ‘10 Optical Properties 100 Transmittance (%) Results 80 60 40 CIO CIO+ITO(23nm) CIO+ITO(37nm) 20 0 500 1000 1500 Wavelength (nm) 2000 Conclusions • Small bandgap polymers with high power conversion efficiencies possible • Importance of templating π-face-on donor polymer growth • 7.6% - 9.1% BHJ efficiencies due to better light capture, local orientation on anode, ordering, + unknown factors • Nanoscopic organic, inorganic anode IFLs significantly increase BHJ efficiency, durability • High-efficiency BHJ cells achieved without PEDOT:PSS • Graphene Oxide is a very effective interfacial layer • Theory and computation essential for materials design OPV Prospects. What Next? √• p-Type Donor h+ h+ ? e- Capture Maximum Solar Output Create Long-Lived Exciton ?• en-Type Acceptor h+ TCO hυ ≥ Eg Hole-Transporting Layer eV z Challenges eLow-Φ metal ?• √• ?• Efficiently Split Exciton, but Use Minimum Energy Achieve High Hole and Electron Mobilities Through Active Solid Efficiently Extract Charge at the Electrodes Carry Charges Away