ESPS-NIS 2014

10th International Workshop
ESPS - NIS 2014
Epitaxial Semiconductors On Patterned Substrates and Novel Index Surfaces
10th International Workshop on
Epitaxial Semiconductors on
Patterned Substrates and
Novel Index Surfaces
July 20 - 23, 2014
Traunkirchen, Austria
PROGRAM
Map of Traunkirchen
Hotel Post Seehotel
Lecture Hall
Monastery
Train Station:
“Traunkirchen Ort“
Seehotel
Hotel Post
Lecture Hall
in former monastery
10th International Workshop on
Epitaxial Semiconductors on
Patterned Substrates and
Novel Index Surfaces
July 20 - 23, 2014
Traunkirchen, Austria
Program
Organizer
Institut für Halbleiter- und Festkörperphysik
Johannes Kepler Universität
A-4040 Linz Austria
10th International Workshop on
Epitaxial Semiconductors on
Patterned Substrates and
Novel Index Surfaces
Traunkirchen, Austria
Chairs
Armando Rastelli (University of Linz)
Gunther Springholz (University of Linz)
Javier Martín-Sánchez (University of Linz)
Program Committee
Gerhard Abstreiter (WSI, München, Germany)
Paola Atkinson (INSP, Paris, France)
Erik Bakkers (TU Eindhoven, Netherlands)
Isabelle Berbezier (IM2NP-CNRS Marseille, France)
Knut Deppert (Lund University, Sweden)*
Jerrold Floro (University of Virginia, USA)
Takashi Fukui (Hokkaido University, Japan)
Lutz Geelhaar (Paul Drude Institut Berlin, Germany)
Detlev Grützmacher (Forschungszentrum Julich, Germany)
Mircea Guina (TU Tampere, Finland)
Mohamed Henini (University of Nottingham, UK)
Mark Hopkinson (University of Sheffield, UK)
Eli Kapon (EPFL-Lausanne, Switzerland)
Leo Miglio (University Milano-Bicocca, Italy)
Richard Nötzel (UPM Madrid, Spain)
Emanuele Pelucchi (Tyndall, Ireland)
Johann-Peter Reithmaier (University of Kassel, Germany)
Kazuaki Sakoda (NIMS Tsukuba, Japan)
Stefano Sanguinetti (L-NESS Como, Italy)
Oliver G. Schmidt (IFW Dresden, Germany)
Kang Wang (UCLA Los Angeles, USA)*
Zhenyang Zhong (Fudan University, China)
Organizing Committee
Armando Rastelli (University of Linz)
Gunther Springholz (University of Linz)
Javier Martín-Sánchez (University of Linz)
Susanne Schwind (University of Linz)
Stephan Bräuer (University of Linz)
1
Foreword
Welcome to Traunkirchen, Austria and the 10th International Workshop on Epitaxial Semiconductors on Patterned Substrates and Novel Index Surfaces !
ESPS-NIS focuses on recent developments in epitaxial growth of semiconductor nanostructures on non-planar patterned, vicinal or high-indexed surfaces. Prepatterning and novel index
surfaces are highly interesting and technologically important since they display many intriguing properties that may be exploited to obtain new fundamental insights in the mechanisms
of self-assembly and self-organization and enable a variety of interesting scientific and
industrial applications. These features range from engineering of nucleation sites for nanostructure growth to novel electronic properties for integration in photonic devices.
ESPS-NIS 2014 brings together about 60 researchers and scientist from all over the world
working in the field of growth, modeling, characterization and device applications, with the
previous workshops held in 2012 in Eindhoven, 2010 in Como and 2008 in Marseille. The
workshop spans three days from July 21st to 23rd, 2014 and features 1 plenary and 19 invited
speakers and 23 contributed presentations who will provide an comprehensive overview of
the current and future research directions in the field. The aim is to provide a forum for
intensive discussion and a high level of interaction in an informal environment.
The principal topics include:
● Self-assembly and site-control of nanowires and quantum dots
● Advanced nanopattering and growth on patterned substrates
● Novel materials including semiconductors, topological insulators,
graphene and layered materials
● Novel nanomorphlogies on vicinal and high-indexed surfaces
● In situ and in vivo growth studies
● Fundamental mechanisms and modelling of growth
● Structural, electronic, optical and transport properties of nanostructures
● Photonic structures
● Nanodevice fabrication and applications
As social events, there will be a welcome reception, a boat trip on the Traunsee lake with the
conference Banquet and a visit to Gmunden, as well as an optional full day excursion to Bad
Ischl and the Schafberg mountain after the scientific program.
We hope you will enjoy the conference with its exciting scientific program, social events and
pleasant surroundings of one of the most beautiful spots in the Austrian Alps.
Gunther Springholz
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Program of ESPS-NIS 2014
Sunday, July 20:
17:00 – 18:00 Registration, 18:00 – 19:30 Reception, 19:30 Dinner
Monday Morning, July 21
8:45 – 8:55
Opening
Session 1: Site-controlled QDs
Chairman: Armando Rastelli
8:55 – 9:40
Growth of site-controlled III-nitride semiconductor nanowire quantum dots for application
Y. Arakawa (invited), M. Holmes1, K. Choi1, M. Arita1, and S. Kako
Center for Photonic and Electronic Convergence, Institute of Industrial Science (CPEC-IIS)
Institute for Nano Quantum Information Electronics (Nano-Quine) .............................................. 15
9:40 – 10:10
Positioning Quantum Dots on GaAs substrates: A scalable platform for quantum emitters
C. Schneider1 (invited), V. Baumann1 , S. Maier 1, P. Gold1, T. Heindel2, M. Gschrey2,
S. Rodt2, A. Forchel1, S. Reitzenstein2, S. Höfling3, and M. Kamp1
1
Technische Physik and Wilhelm Conrad Röntgen-Center for Complex Material Systems,
University Würzburg, Am Hubland, 97074 Würzburg, Germany,
2
Institut für Festkörperphysik, TU Berlin, Hardenbergstrasse 36, 10623 Berlin, Germany
3
School of Physics and Astronomy, University of St Andrews, St. Andrews KY16 9SS, UK ........... 16
10:10 – 10:30
Ordered InAs Quantum Dots for Quantum Photonics by Combination of Molecular Beam
Epitaxy and Nanoimprint Lithography
T.V. Hakkarainen1*, J. Tommila1, V. Belykh2, E. Heinonen3, A. Schramm1, M. Guina1
1
Optoelectronics Research Centre, Tampere University of Technology, Tampere, Finland
2
P.N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow, Russia
3
Center of Microscopy and Nanotechnology, University of Oulu, Oulu, Finland .......................... 18
10:30 – 11:00
Coffee break
Session 2: Site-control of QDs in Photonic Crystals
Chairman: Gregor Koblmüller
11:00 – 11:30
Using growth anisotropy to control the position of InAs self-assembled quantum dots
Allan Bracker (invited), Naval Research Laboratory, Washington, D.C. 20375, USA.................. 19
11:30 -11:50
On-chip transmission of quantum light from a site-controlled quantum dot
Joanna Skiba-Szymanska,1 Sokratis Kalliakos,1 Ayesha Jamil,2 Andre Schwagmann,1,2
Martin B. Ward,1 Yarden Brody,1,2 David J. P. Ellis,1 Ian Farrer,2 Jonathan P. Griffiths,2
Geb A. C. Jones,2 David A. Ritchie,2 and Andrew J. Shields1
1
Cambridge Research Laboratory, Toshiba Research Europe Limited, 208 Science Park,
Milton Road, Cambridge, CB4 0GZ, United Kingdom, 2 Cavendish Laboratory,
University of Cambridge, Cambridge CB3 0HE, UK ..................................................................... 21
11:50 -12:10
Site-Controlled SiGe Islands in a 2D Photonic Crystal Slab
R. Jannesari, F. Hackl, E. Lausecker, M. Glaser, F. Schäffler, T. Fromherz,
Institute of Semiconductor Physics, Johannes Kepler University, 4040 Linz, Austria.................... 22
12:10 -12:30
Integration of site- and spectrum -controlled pyramidal quantum dots
with photonic crystal membrane cavities
A. Lyasota, B. Dwir, P. Gallo, C. Jarlov, B. Rigal, A. Rudra and E. Kapon
Laboratory for the physics of nanostructures (LPN),
Ecole Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland ............................. 24
12:30 – 14:00
Lunch (Hotel Post)
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Monday Afternoon, July 21
Session 3: Nanowires
Chairman: Frederik Karlsson
14:00 – 14:30
Strong infrared, lasing and THz emission from site-selective (In,Ga)As nanowires
on patterned Si
J. Treu1, B. Mayer1, S. Morkötter1, S. Hertenberger1, D. Rudolph1, A. Arlauskas2,
A.Krotkus2, G. Abstreiter1,3, J. J. Finley1, and G. Koblmüller1 (invited),
1
Walter Schottky Institut and Physik Department, TU Munich, D-85748 Garching, Germany
2
Center for Physical Sciences and Technology, LT-01180 Vilnius, Lithuania
3
Institute for Advanced Study, TU Munich, D-85748 Garching, Germany ..................................... 26
14:30 – 15:00
III-V nanowires for light emission on a Si platform
L. Geelhaar (invited),
Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany ........ 27
15:00 – 15:30
Quantifying Defect Formation in Nanowire-based Heterostructures
Sònia Conesa-Boj1(invited), Francesca Boioli4,Ϯ, Eleonora Russo-Averchi1,
Sylvain Dunand2, Martin Heiss1, Daniel Rüffer1, Nicolas Wyrsch2, Christophe Ballif2,3,
Leo Miglio4, Anna Fontcuberta i Morral1,*
1
École Polytechnique Fédérale de Lausanne (EPFL), Laboratoire des Matériaux
Semiconducteurs (LMSC), 1015 Lausanne, Switzerland,
2
École Polytechnique Fédérale de Lausanne (EPFL), Institute of Microengineering (IMT),
Photovoltaics and Thin Film Electronics Laboratory, 2000 Neuchâtel, Switzerland,
3
Centre Suisse d’Electronique et de Microtechnique, 2000 Neuchâtel, Switzerland,
4
University Milano-Bicocca, L-NESS Department Materials Science, 20125 Milano, Italy ........ 28
15:30 – 16:00
Coffee break
Session 4: Nanowires & Growth Studies
Chairman: Lutz Geelhaar
16:00 – 16:30
InSb nanowire networks
D. Car1, M.A. Verheijen1,2, I. van Weperen3, J. Kammhuber3, S.M. Frolov3,4,
L.P. Kouwenhoven3 , E.P.A.M. Bakkers1,3 and S.R. Plissard3,5(invited)
1
Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB
Eindhoven, the Netherlands.
2
Philips Innovation Services Eindhoven, High Tech Campus 11, 5656AE Eindhoven, Netherlands
3
Kavli Institute of Nanoscience, Delft University of Technology, 2628CJ Delft, the Netherlands,
4
Department of Physics and Astronomy, University of Pittsburgh, 3943 O'Hara Street, 15260
Pittsburgh, PA, USA,
5
LAAS-CNRS, Université de Toulouse, 7 avenue colonel Roche, F-31077 Toulouse, France ...... 30
16:30 -17:00
Exotic crystal structure Nanowires
H. I. T. Hauge 1(invited), M. A. Verheijen 1, 2, A. Li 1, S. Assali 1 and E.P.A.M. Bakkers 1, 3
1
Eindhoven University of Technology, 5600 MB Eindhoven, the Netherlands,
Philips Innovation Services, 5656 AE, Eindhoven, the Netherlands
3
Delft University of Technology, 2600 GA Delft, the Netherlands ................................................ 31
17:00 -17:15
InAs nanowires on textured Si (100) substrates
T. Rieger, D. Rosenbach, S. Heedt, G. Mussler, Th. Schäpers, M. I. Lepsa, D. Grützmacher
Peter Grünberg Institute and JARA-FIT, Forschungszentrum Jülich,52425 Jülich, Germany ....... 32
17:15 -17:45
Reverse Epitaxy on Semiconductor Surfaces
X. Ou (invited), R. Hübner, M. Helm, J. Fassbender, S. Facsko,
Helmholtz-Zentrum Dresden-Rossendorf (HZDR), 01314 Dresden, Germany ............................... 35
18:00 – 19:30
Dinner (Hotel Post)
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Monday Evening, July 21
18:00 – 19:30
Dinner (Hotel Post)
Session 5: Site-Controlled Quantum Dots
Chairman: Friedrich Schäffler
19:30 – 19:45
Growth and characterization of site-controlled InAs quantum dots
on pre-patterned GaAs substrates
P. Krawiec, M. Usman, J.P. Reithmaier, and M. Benyoucef
Institute of Nanostructure Technologies and Analytics (INA), Center for Interdisciplinary
Nanostructure Science and Technology (CINSaT), University of Kassel, Germany ...................... 36
19:45 – 20:00
Photoluminescence of dislocation-free Ge quantum well micro-crystals
on patterned Si substrates
F. Isa1,2, F. Pezzoli3, C. V. Falub1, E. Müller4, G. Isella2, T. Kreiliger1, A. G. Taboada1,
E. Grilli3, H. von Känel1, L. Miglio3
1
Laboratory for Solid State Physics, ETH Zürich, Otto-Stern-Weg 1, CH-8093 Zürich, Switzerland
2
L-NESS and Department of Physics, Politecnico di Milano, Via Anzani 42, I-22100 Como, Italy
3
L-NESS, Department of Materials Science, Università di Milano-Bicocca, via Cozzi 55, I-20126
Milano, Italy, 4 Electron Microscopy Center, ETH Zürich, Auguste-Piccard-Hof 1, CH-8093
Zürich, Switzerland ......................................................................................................................... 38
20:00 -20:15
Enhancement of Light Extraction from Photonic Crystals Slabs with Aligned
Ge-Quantum Dot Emitters
M. Schatzl, R. Jannesari, F. Hackl, M. Glaser, T. Fromherz, F. Schäffler
Institute of Semiconductor Physics, Johannes Kepler University, A-4040 Linz, Austria ................ 40
20:15 – 20:30
Three-dimensional Ge/Si quantum dot crystals with small periodicities
G. Mussler1, C. Dais2, D. Grützmacher1, H. H. Solak2, T. Fromherz3, J. Stangl3
1
Peter Grünberg Institute 9, Research Center Jülich, Leo Brandt Str., 52425 Jülich, Germany
2
Eulithia AG, Industriestrasse Althau 1, 5303 Würenlingen, Switzerland
3
Institute for semiconductor physics, Johannes Kepler University Linz, Austria............................ 42
20:30 -20:45
Towards the Deterministic Coupling of a Single Quantum Dot to a
Photonic Crystal Cavity Mode: Epitaxial re-growth of GaAs-based
photonic crystal microcavities containing site control InAs Quantum Dot
J. Herranz, I. Prieto, L. Wewior, B. Alén, D. Fuster, L. González, P.A. Postigo and Y. González
IMM-Instituto de Microelectrónica de Madrid (CNM-CSIC), Isaac Newton 8,
PTM, E-28760 Tres Cantos, Madrid, Spain ................................................................................... 45
20:45 -21:00
Ge quantum dot wires on a patterned Si substrate: growth, transport and spin properties
N.P. Stepina, Zh.V. Smagina, A.F. Znovieva, V.A. Zinoviev, A.V. Nenashev, A.V. Dvurechenskii
Institute of Semiconductor Physics, 630090 Novosibirsk, Russia ................................................... 46
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Tuesday Morning, July 22
Session 6: Modelling
Chairman: Christoph Deneke
9:00 – 9:30
Continuum modeling of lattice-mismatched heteroepitaxy: intermixing, dislocations,
and complex topological changes
Francesco Montalenti (invited)
L-NESS and Materials Science Department, University of Milano-Bicocca, Milan (Italy) ............ 48
9:30 – 10:00
Evolution of SiGe islands on pit-patterned substrates monitored by Ge surface diffusion
T. Fromherz1 *, F. Hackl1, E. Lausecker1, R. Jannesari1, M. Grydlik2, M. Brehm2, M. Glaser, F.
Schäffler1, G. Bauer1 (invited)
1
Institute of Semiconductor Physics, Johannes Kepler University, 4040 Linz, Austria
2
Institute for Integrative Nanosciences, IFW Dresden, 01069 Dresden, Germany ......................... 49
10:00 – 10:20
Modelling patterned substrate growth by MOVPE: from equilibrium to transient dynamics
V. Dimastrodonato1, G. Juska1, T. H. Chung1, P. A. Zestanakis2,
D. D. Vvedensky2, and E. Pelucchi1*
1
Tyndall National Institute, Dyke parade, Cork, Ireland
2
Imperial College London, London, United Kingdom ................................................................... 50
10:20 – 10:50
Coffee break
Session 7: Fundamental Growth Studies
Chairman: Gunther Springholz
10:50 – 11:20
Growth Mechanism and Electronic Structure of Self-Assembled
Semimetallic Rare-Earth-V Nanostructures Embedded in III-V Semiconductors
J.K. Kawasaki1, B.D. Schultz2 and C.J. Palmstrøm1,2 (invited)
1
Materials Department and 2Deptartment of Electrical & Computer Engineering,
University of California, Santa Barbara, CA 93106, USA .............................................................. 52
11:20 -11:50
Doping and Annealing of Epitaxial Ge-QDs and the Wetting Layer - a Surface Science Study
G. Ramalingam, C.A. Nolph, K.R.Simov, P. Reinke (invited)
Department of Materials Science and Engineering, University of Virginia,
395 McCormick Road, Charlottesville, VA 22904, U.S.A ............................................................... 54
11:50 -12:10
In situ STM studies on Ge nanowire growth on singular and vicinal Si (001) substrates
Christian Grossauer and Gunther Springholz
Johannes Kepler University, Institute of Semiconductor and Solid State Physics,
Altenbergerstrasse 69, A-4040 Linz, Austria ................................................................................... 56
12:15 – 18:00
Excursion: Boat Trip on Traunsee and Visit to Gmunden
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Tuesday Evening, July 22
18:00 – 19:30
Dinner (Hotel Post)
Session 8: Strain and Electronic Properties
Chairman: Javier Martin-Sanchez
19:30 – 19:45
Nanomorphology of InP on AlInAs during early stages of strain-free heteroepitaxy
by MOVPE
A. Gocalinska1, M. Manganaro1, G. Juska, V. Dimastrodonato1, K. Thomas1, B.A. Joyce2,
J. Zhang2, D. D. Vvedensky2, and E. Pelucchi1
1
Tyndall National Institute, University College Cork, “Lee Maltings," Dyke Parade, Cork, Ireland
2
The Blackett Laboratory, Imperial College London, London SW7 2AZ, United Kingdom............ 58
19:45 – 20:00
Study of defects management in (11-22) GaN grown on patterned sapphire substrate
F. Tendille1, P. De Mierry1, P. Vennéguès1, S. Chenot1, M. Tesseire1, L. Kappei1
1
CRHEA-CNRS (Centre de Recherches sur l’Hétéro-Epitaxie et ses Applications),
Sophia Antipolis, Rue Bernard Grégory, 06560 Valbonne, France................................................ 61
20:00 – 20:15
Strain monitoring in elongated nanowires located in SOI based straining devices
using nano-focused x-ray diffraction
M. Keplinger1, R. Grifone2, J. Greil3, J. Stangl1, A. Lugstein3,
1
Institut für Halbleiter- und Festkörperphysik, Johannes Kepler Universität Linz,
Altenbergerstraße 69, 4040 Linz, Austria
2
European Synchrotron Radiation Facility, Rue Jules Horowitz 6, 38043 Grenoble, France
3
Institute of Solid State Electronics, Tu Wien, Floragasse 7, 1040Vienna, Austria ........................ 62
20:15 – 20:30
Wave Function Engineering in Quantum Nanostructures
Elżbieta Zipper, Marcin Kurpas, Maciej M. Maśka
Instytut Fizyki, Uniwersytet Śląski, Katowice, Poland.................................................................... 64
20:30 – 20:45
Surface states and their spin polarization in (111)- and (110)-oriented (Pb,Sn)Te
and (Pb,Sn)Se layers
R. Buczko, S. Safaei and P. Kacman, Institute of Physics, Polish Academy of Sciences,
Al. Lotników 32/46, 02-668 Warsaw, Poland ................................................................................. 65
20:45 – 21:00
Epitaxial Growth of Topological Crystalline Insulators
V. V. Volobuev,1,2 M. Partha3, O. Caha,4 J. Sanchez-Barriga,3 A. Varykhalov3,
O. Rader3, A. Khiar,1 G. Bauer1, and G. Springholz1,
1
Institut for Semiconductor Physics, Johannes Kepler University, A-4040 Linz, Austria
2
National Technical University "Kharkiv Polytechnic Institute", 61002 Kharkiv, Ukraine
3
Helmholtz-Zentrum Berlin, BESSY II, D-12489 Berlin, Germany
4
Masaryk University, Kotlarska 2, 611 37 Brno, Czech Republic .................................................. 66
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Wednesday Morning, July 23
Session 9: Droplet Epitaxy
Chairman: Francesco Montalenti
9:00 – 9:30
Dynamic Aspects of Droplet Epitaxy
D.E. Jesson (invited)
School of physics and Astronomy, Cardiff University, Cardiff CF24 3AA, United Kingdom.......... 67
9:30 – 10:00
Critical role of arsenic in nanoholes formation by Ga droplet epitaxy on GaAs(001)
David Fuster, Yolanda González and Luisa González (invited)
IMM-Instituto de Microelectrónica de Madrid (CNM-CSIC), Isaac Newton 8,
PTM, E-28760 Tres Cantos, Madrid, Spain .................................................................................... 69
10:00 – 10:30
Droplet Epitaxy Growth of Nanostructures on Patterned and (111) Substrates
Sergio Bietti (Invited)
L-NESS and Materials Science Department, University of Milano-Bicocca, Milan, Italy .............. 70
10:30 – 11:00
Coffee break
Session 10: Membranes
Chairman: Jerrold Floro
11:00 – 11:30
Nano-membranes as templates for epitaxial InAs growth
Christoph Deneke (invited)
LNNano/CNPEM, Rua Giuseppe Máximo Scolfaro 10000, 13083-100 Campinas, Brazil ............ 72
11:30 - 11:50
X-ray strain microscopy and Raman spectroscopy of tensile strained Ge micro-bridges
T. Etzelstorfer1, M. Süess2, A. Wyss2, F. Schlich2, G. Schiefler3, G. Isella4, A. Diaz3,
H. Sigg3, R. Spolenak2, J. Stangl1
1
Institute of Semiconductor and Solid State Physics, JKU Linz, Altenbergerstr. 69, A-4040 Linz
2
Laboratory for Nanometallurgy, ETH Zürich, Wolfgang-Pauli-Strasse 10, CH-8093 Zürich
3
Paul Scherrer Institute, CH-5232 Villigen PSI
4
L-NESS Politecnico de Milano, Via Anzani 42, I-22100 Como .................................................... 74
Session 11: SiGe Nanostructures
Chairman: Jerrold Floro
11:50 - 12:10
Controllable growth of GeSi quantum dot molecules on patterned Si (001) substrates
Tong Zhou, Hui Lei, Shuguang Wang, Yongliang Fan, Zuimin Jiang, Zhenyang Zhong
State Key Laboratory of Surface Physics and Department of Physics, Fudan University,
Shanghai 200433, China ................................................................................................................. 76
12:10 – 12:30
Influence of composition and substrate miscut on the evolution of {105}-terminated
in-plane Si1-xGex quantum wires on Si(001)
H. Watzinger1, M. Glaser1, J.J. Zhang2, I. Daruka1, F. Schäffler1
1
Abteilung für Halbleiterphysik, Johannes Kepler University, 4040 Linz, Austria,
² Center for Quantum Computation and Communication Technology,
University of New South Wales, Sydney, Australia.......................................................................... 78
12:30 – 14:00
Lunch (Hotel Post)
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10th International Workshop – ESPS-NIS 2014
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Wednesday Afternoon, July 23
Session 11: SiGe Nanostructures
Chairman: Frederik Karlsson
14:00 – 14:20
Directing Ge Quantum Dot Self-Assembly At and Below 50 nm Pitch:
Single Layer and Bilayer Stacks
Jerrold A. Floro, Christopher J. Duska
University of Virginia, Dep. Materials Science and Engineering, Charlottesville, VA USA .......... 80
14:20 – 14:40
Self-assembled in-plane Ge nanowires on rib-patterned Si (1 1 10) templates
Lei Du,1 Daniele Scopece,3, 4 Gunther Springholz,2 Friedrich Schäffler,2 Gang Chen1, 2,
1
National Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese
Academy of Sciences, 500 Yutian Rd., 200083 Shanghai, China
2
Institute of Semiconductor and Solid State Physics, Johannes Kepler University,
A4040 Linz, Austria, 3 L-NESS and Department of Materials Science, Università di MilanoBicocca, via R. Cozzi 53, 20126, Milano, Italy, 4 Swiss Federal Laboratories
for Materials Science and Technology, 8600 Dübendorf, Switzerland ........................................... 83
Wednesday Afternoon, July 23
Session 12: Pillars and Patterned Substrates
Chairman: Frederik Karlsson
14:40 – 15:10
Strain relaxation of GaAs/Ge crystals on patterned Si substrates
A. G. Taboada,1 (invited) A. Jung,1 M. Meduňa,2 T. Kreiliger,1 F. Isa,1, 3 C. V. Falub,1
M. Salvalaglio,4 L. Wewior,5 D. Fuster,5 B. Alén,5 L. Miglio,4 G. Isella,3 and H. von Känel1
1
Laboratory for Solid State Physics, ETH Zürich, Zürich, Switzerland.
2
Dept. of Condensed Matter Phys. and CEITEC, Masaryk University, Czech Republic
3
L-NESS, Dept. of Physics, Politecnico di Milano , Como, Italy.
4
L-NESS, Dept. of Material Science, Università di Milano-Bicocca, via R.Cozzi 55, Milano, Italy
5
IMM, Instituto de Microelectrónica de Madrid (CNM, CSIC), 9 Madrid, Spain .......................... 84
15:10 – 15:40
Coffee break
Session 12: Pillars and Patterned Substrates
Chairman: Sebastian Plissard
15:40 – 16:10
III-V nanowires on patterned Si substrates and their applications
Katsuhiro Tomioka1,2 (invited) and Takashi Fukui1
1
Graduate School of Information Science and Technology, and Research Center for
Integrated Quantum Electronics (RCIQE), Hokkaido University, Kita 13-Jo,
Nishi 13-Chome, Kita-ku, Sapporo, Hokkaido 060-8628, Japan,
2
JST PRESTO, 4-1-8 Honcho, Kawaguchi,Saitama,332-0012, Japan .......................................... 86
16:10 -16:40
InGaN quantum dots grown on ordered GaN micropyramids
K. F. Karlsson (invited), A. Lundskog, C. W. Hsu, S. Amloy, U. Forsberg,
T. Jemsson, H. Machhadani, E. Janzén and P. O. Holtz
Semiconductor Materials, IFM, Linköping University, SE-581 83 Linköping, Sweden.................. 88
16:40 – 17:00
Closing
18:00 – 19:30
Dinner (Hotel Post)
Thursday, July 24
9:00 – 15:00
Optional excursion to Bad Ischl / Wolfgang See / Schafberg (cogwheel mountain train)
Transfer to Salzburg airport depending on flight schedules
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10th International Workshop – ESPS-NIS 2014
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List of Participants
Name
Affiliation
Country
Arakawa, Yasuhiko
Bauer, Günther
Bietti, Sergio
Bracker, Allan
Bräuer, Stephan
Buczko, Ryszard
Chen, Gang
Conesa-Boj, Sonia
Deneke, Christoph
Etzelsdorfer, Tanja
Floro, Jerrold
Fromherz, Thomas
Geelhaar, Lutz
Glaser, Martin
Gocalinska, Agnieszka
González, Luisa
González, Yolanda
Grossauer, Christian
Hakkarainen, Teemu
Hauge, Ikaros
Isa, Fabio
Jesson, David
Karlsson, Fredrik
Koblmüller, Gregor
Krawiec, Patrick
Lausecker, Elisabeth
Lyasota, Alexey
Martín-Sánchez, Javier
Montalenti, Francesco
Mussler, Gregor
Ou, Xin
Palmstrom, Chris
Pelucchi, Emanuele
Plissard, Sebastian
Rastelli, Armando
Reinke, Petra
Rieger, Torsten
Schäffler, Friedrich
Schatzl, Magdalena
Univ. Tokyo
JKU Univ. Linz
Univ. Milano-Bicocca
NRL
JKU Univ. Linz
Academy Science Warsaw
Natl. Infrared Lab.
EPFL
LNNANO
JKU Univ. Linz
Univ. Virginia
JKU Univ. Linz
PDI
JKU Univ. Linz
Tyndall Inst.
IMM-CNM CSIC
IMM-CNM CSIC
JKU Univ. Linz
Univ. Tech. Tampere
TUE
ETH
Univ. Cardiff
Univ. Linköping
WSI
Univ. Kassel
JKU Univ. Linz
EPFL
JKU Univ. Linz
Univ. Milano-Bicocca
Peter Grünberg Inst. Jülich
Helmholtz-Zentrum Dresden
Univ. California
Tyndall Inst.
Univ. Delft
JKU Univ. Linz
Univ. Virginia
Peter Grünberg Inst. Jülich
JKU Univ. Linz
JKU Univ. Linz
Japan
Austria
Italy
USA
Austria
Poland
China
Switzlerland
Brazil
Austria
USA
Austria
Germany
Austria
Ireland
Spain
Spain
Austria
Finland
The Netherlands
Switzerland
UK
Sweden
Germany
Germany
Austria
Switzerland
Austria
Italy
Germany
Germany
USA
Ireland
The Netherlands
Austria
USA
Germany
Austria
Austria
Scheneider, Christian
Univ. Würzburg
Germany
Toshiba
UK
[email protected]
JKU Univ. Linz
JKU Univ. Linz
JKU Univ. Linz
Inst. Semicond. Phys. Novosibirsk
ETH
CRHEA-CNRS
Univ. Hokkaido
JKU Univ. Linz
JKU Univ. Linz
Univ. Fudan
Univ. Slaski
Austria
Austria
Austria
Russia
Switzerland
France
Japan
Austria
Austria
China
Poland
[email protected]
[email protected]
[email protected]
[email protected]
[email protected]
[email protected]
[email protected]
[email protected]
[email protected]
[email protected]
[email protected]
Skiba-Szymanska,
Joanna
Springholz, Gunther
Stangl, Julian
Steiner, Hubert
Stepina, Natalia
Taboada, Alfonso
Tendille, Florian
Tomioka, Katsuhiro
Volobuev, Valentine
Watzinger, Hannes
Zhong, Zhenyang
Zipper, Elzbieta
E-mail address
[email protected]
[email protected]
[email protected]
[email protected]
[email protected]
[email protected]
[email protected]
[email protected]
[email protected]
[email protected]
[email protected]
[email protected]
[email protected]
[email protected]
[email protected]
[email protected]
[email protected]
[email protected]
[email protected]
[email protected]
[email protected]
[email protected]
[email protected]
[email protected]
[email protected]
[email protected]
[email protected]
[email protected]
[email protected]
[email protected]
[email protected]
[email protected]
[email protected]
[email protected]
[email protected]
[email protected]
[email protected]
[email protected]
[email protected]
[email protected]
10th International Workshop
ESPS - NIS 2014
Epitaxial Semiconductors On Patterned Substrates and Novel Index Surfaces
20-23 July, Traunkirchen, Austria
Sunday 20.07.2014
17:00 Registration
18:00 Welcome Reception
19:30 Dinner
Scientific Program
Monday 21.07.2014
Speaker
Time
Opening
08:45
Yasuhiko Arakawa
(Plenary)
Christian Schneider
(Invited)
Teemu Hakkarainen
08:55
Topic
09:40
Site-Controlled
QDs
10:10
Chair: Armando Rastelli
10:30
Allan Bracker
(Invited)
Joanna SkibaSzymanska
Elisabeth Lausecker
Alexey Lyasota
Gregor Koblmüller
(Invited)
Lutz Geelhaar
(Invited)
Sonia Conesa-Boj
(Invited)
Site-Control of
QD in Photonic
crystals
11:50
12:10
Chair:
Gregor Koblmüller
Xin Ou
(Invited)
Growth of site-controlled III-nitride semiconductor nanowire quantum dots for
application to room-temperature single photon emitters
Positioning Quantum Dots on GaAs substrates: A scalable platform for quantum
emitters
Ordered InAs Quantum Dots for Quantum Photonics by Combination of
Molecular Beam Epitaxy and Nanoimprint Lithography
Univ. Tokyo, Japan
Univ. Würzburg,
Germany
Univ. Tech. Tampere,
Finland
Using growth anisotropy to control the position of self-assembled quantum dots
NRL, USA
On-chip transmission of quantum light from a site-controlled quantum dot
Toshiba, UK
Site-controlled SiGe islands in a 2D photonic crystal slab
JKU Univ. Linz,
Austria
EPFL, Switzerland
Integration of site- and spectrum -controlled pyramidal quantum dots with
photonic crystal membrane cavities
12:30
LUNCH
14:00
Strong infrared and THz emission from site-selective InGaAs nanowires on
patterned Si
III-V nanowires for light emission on a Si platform
WSI, Germany
Quantifying Defect Formation in Nanowire-based Heterostructures
EPFL, Switzerland
14:30
15:00
Nanowires
Chair: Fredrik Karlsson
15:30
Sebastian Plissard
(Invited)
H.I.T. Hauge
(Invited)
Torsten Rieger
Affiliation
BREAK
11:00
11:30
Title
BREAK
16:00
16:30
17:00
17:15
InSb nanowire networks
Nanowires
Chair: Lutz Geelhaar
Growth Studies
Exotic crystal structure nanowires
InAs nanowires on textured Si (100) substrates
Reverse Epitaxy on Semiconductor Surfaces
17:45
BREAK
18:00
DINNER
Patrick Krawiec
19:30
Fabio Isa
19:45
Growth and characterization of site-controlled InAs quantum dots on prepatterned GaAs substrates
Photoluminescence of dislocation-free Ge quantum well micro-crystals on
patterned Si substrates
Enhancement of Light Extraction from Photonic Crystals Slabs with Aligned
Ge-quantum Dot Emitters
Three-dimensional Ge/Si quantum dot crystals with small periodicities
Magdalena Schatzl
20:00
Gregor Mussler
20:15
Yolanda González
20:30
Natalia P. Stepina
20:45
PDI, Berlin
Site-Controlled
QDs
Chair:
Friedrich Schäffler
Towards the Deterministic Coupling of a Single Quantum Dot to a Photonic
Crystal Cavity Mode: Epitaxial re-growth of GaAs-based photonic crystal
microcavities containing site-controlled InAs Quantum Dot
Ge quantum dot wires on a patterned Si substrate: growth, transport and spin
properties
Delft University,
The Netherlands
TUE, The Netherlands
Peter Grünberg Inst.
Jülich, Germany
Helmholtz-Zentrum
Dresden, Germany
Univ. Kassel, Germany
ETH, Switzerland
JKU Univ. Linz,
Austria
Peter Grünberg Inst.
Jülich, Germany
IMM- CSIC, Spain
Inst. Semicond. Phys.
Novosibirsk, Russia
Tuesday 22.07.2014
Speaker
Francesco
Montalenti (Inv.)
Thomas Fromherz
(Invited)
Emanuele Pelucchi
Topic
Time
09:00
Modeling
09:30
10:00
Chair: Christoph
Deneke
10:20
Chris Palmstrom
(Invited)
Petra Reinke
(Invited)
Christian Großauer
10:50
11:20
11:50
Fundamental
Growth
Studies
Chair: Gunther
Springholz
Julian Stangl
20:00
19:45
Elzbieta Zipper
20:15
Ryszard Buczko
20:30
Gunther Springholz
20:45
Univ. MilanoBicocca, Italy
JKU Univ. Linz,
Austria
Tyndall Inst., Ireland
Growth Mechanism and Electronic Structure of Self-Assembled Semimetallic RareEarth-V Nanostructures Embedded in III-V Semiconductors
Doping and annealing of epitaxial Ge-QDs and the wetting layer -a surface science
study
In situ STM studies on Ge nanowire growth on singular and vicinal Si (001)
substrates
Univ. California,
USA
Univ. Virginia, USA
JKU Univ. Linz,
Austria
EXCURSION (Boat Trip & Banquet)
18:00
19:30
Affiliation
Continuum modeling of lattice-mismatched heteroepitaxy: intermixing, dislocations,
and complex topological changes
Evolution of SiGe islands on pit-patterned substrates monitored by Ge surface
diffusion
Modelling patterned substrate growth by MOVPE: from equilibrium to transient
dynamics
BREAK
12:15
Agnieszka
Gocalinska
Florian Tendille
Title
DINNER
Growth
Studies
Chair: Javier
Martín-Sánchez
Strain and
Electronic
Structure
Chair: Javier
Martín-Sánchez
Nanomorphology of InP on AlInAs during early stages of strain-free heteroepitaxy
by MOVPE
Study of defects management in (11-22) GaN grown on patterned sapphire substrate
Tyndall Inst., Ireland
Strain monitoring in elongated nanowires located in SOI based straining devices
using nano-focused x-ray diffraction
Wave function engineering in quantum nanostructures
CRHEA-CNRS,
France
JKU Univ. Linz,
Austria
Univ. Slaski, Poland
Surface states and their spin polarization in (111)- and (110)-oriented (Pb,Sn)Te and
(Pb,Sn)Se layers
Epitaxial Growth of Topological Crystalline Insulators
Academy Science
Warsaw, Poland
JKU Univ. Linz
Wednesday 23.07.2014
Speaker
David E. Jesson
(Invited)
Luisa González
(Invited)
Sergio Bietti
(Invited)
Time
Topic
09:00
Droplet
Epitaxy
9:30
10:00
Chair: Francesco
Montalenti
10:30
Christoph Deneke
(Invited)
Tanja Etzelsdorfer
Zhenyang Zhong
Hannes Watzinger
Gang Chen
Alfonso Taboada
(Invited)
Membranes
11:30
Chair: Jerrold
Floro
11:50
SiGe
Nanostructures
12:10
Chair: Jerrold Floro
14:00
SiGe
Nanostructures
14:20
Chair: Thomas
Fromherz
14:40
Micropillars
15:40
16:10
Univ. Cardiff, UK
Critical role of arsenic in nanoholes formation by Ga droplet epitaxy on
GaAs(001)
Droplet Epitaxy Growth of Nanostructures on Patterned and (111) Substrates
IMM-CSIC, Spain
Univ. Milano-Bicocca,
Italy
Nano-membranes as templates for epitaxial InAs growth
LNNANO, Brazil
X-ray strain microscopy and Raman spectroscopy of tensile strained Ge microbridges
Controllable growth of GeSi quantum dot molecules on patterned Si (001)
substrates
Influence of composition and substrate miscut on the evolution of {105}terminated in-plane Si1-xGex quantum wires on Si(001)
JKU Univ. Linz, Austria
Univ. Fudan, China
JKU Univ. Linz, Austria
LUNCH
15:10
Katsuhiro Tomioka
(Invited)
Fredrik Karlsson
(Invited)
Affiliation
Dynamic Aspects of Droplet Epitaxy
BREAK
11:00
12:30
Jerrold A. Floro
Title
Pillars and
Patterned
Substrates
Directing Ge Quantum Dot Self-Assembly At and Below 50 nm Pitch: Single
Layer and Bilayer Stacks
Self-assembled in-plane Ge nanowires on rib-patterned Si (1 1 10) templates
Univ. Virginia, USA
Strain relaxation of GaAs/Ge crystals on patterned Si substrates
Natl. Infrared Phys. Lab,
China
ETH, Switzerland
BREAK
III-V nanowires on patterned Si substrates and their applications
Univ. Hokkaido, Japan
InGaN quantum dots growth on ordered GaN micropyramids
Univ. Linköping, Sweden
Chair: Sebastian
Plissard
16:40
Closing Remarks – End 17:00
18:00
DINNER
Thursday 24.07.2014
09:00 – ca. 15:00 Optional excursion to Bad Ischl, Wolfgang See and the Schafberg mountain (cogwheel train)
Transfer to Salzburg airport depending on flight schedules