L-EDIT tutorial (Layout Editor)

Transcription

L-EDIT tutorial (Layout Editor)
L-EDIT tutorial
(Layout Editor)
Iran University of Science and Technology
By : Eng. Bahram Roshan nezhad
Fall 2012
LOGO
Introduction
 L-Edit is an Integrated Circuit Layout
Tool used to draw the two dimensional
geometry of the masks or layers to
fabricate an integrated circuit.
 Different layers are represented by
by different colors and patterns.
 Manufacturing constraints can be defined
in L-Edit as design rules.
 L-Edit files are saved as file_name.tdb
(Tanner Database).
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LOGO
L-Edit Modules
 L-Edit: The layout editor.
 L-Edit/DRC: The Design Rule Checker.
 L-Edit /Extract: The layout extractor to
SPICE.
 L-Edit /SPR: an automatic standard cell.
placement and routing package.
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LOGO
L-Edit Window
L-Edit v8.30
File and cell name
Location
Menu Bar
Toolbars
Layer Palette
Drawing
windows
Mouse
Buttons
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LOGO
L-Edit Toolbars
File>
Open
File>
New
File>
Save
Draw>
Rotate
Edit>
Duplicate
File>
Print
File>
Copy
File>
Cut
Edit>
Edit-in
Place> Edit>
Push Into Find
File>
Undo
File>
Paste
File>
Redo
Draw>
Draw>
Flip>
Slice>
Draw>
Vertical Horizontal Merge
Draw> Draw>
Flip>
Nibble
Horizontal
Draw>
Slice>
Vertical
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Draw>
Move
By
Edit>
Edit
Object
Tool>
DRC Box
Tool>
DRC
Help>
L-Edit
Cell>
Copy User Guid
Hierarchy level
View>
view>
Edit>
Insides>
Cell
Edit-in
Toggle
Browser
Place>
insides
Pop Out
Draw>
Ungroup
Draw>
Group
view>
Zoom>
Mouse
DRC
Setup
Cell>
Open
Edit>
Find
Tool>
Cross
Section
Tools>
Edit>
Find Clear Error
Previous Layers
Edit>
Find
Next
View>
Goto
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Tool>
Extract
LOGO
L-Edit Toolbars
Selection
tool
Polygon Polygon
(90 deg.) (all-angle)
Rectangular Polygon
Box
(45deg.)
Wire
(35 deg.)
Wire
Wire
(90 deg.) (all-angle)
Wire Width
Circle
Ruler
Ruler
(90 deg.) (all angle)
Torus
Arc
Port
Ruler
(45 deg.)
Layer Palette
Selected
Layer name
Layer Palette
Layer Palette
scrollbar
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Instance
LOGO
Things to know
Lambda Definition (𝝀(
L=2∗𝜆
L: The channel length of the MOSFET, i.e, half
the size of technology used.
Exp) L=180nm
1Lambda=90nm
Note: You must set the length of the square
to represent One lambda or one Locator Unit.
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LOGO
Design Parameters Setups
B) Technology
From: Menu> Setup> Design> Technology
Create a name for
your fabrication
process
Relationship between L-Edit
internal units.
one internal unit is1nm
(1/1000lambda)
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Technology
unit
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LOGO
Design Parameters Setups
B) Grid
From: Menu> Setup> Design> Grid
These are just the
dots shown on the
screen.
This is where your
mouse will snap to.
To set
One locator Unit=lambda
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LOGO
Design Parameters Setups
C) Layers Setup
From: Setup> Layers
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LOGO
Design Parameters Setups
C) Editing Objects
From: Edit> Edit Object (Ctrl+E)
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LOGO
Layout Example
 Draw the layout of a CMOS inverter given the following:
L= 0.5µm, Wn= 1.0µm, and Wp= 2.5µm.
VDD
Pmos
L=0.5µ m
Wp=2.5µ m
V in
Vout
Nmos
L=0.5µ m
Wp=1.0µ
m
n
VSS
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LOGO
Example
 Create new Layout file
 File > New.
 In the following open window, Browse and choose ‘mamin08.tdb’ in
‘‘Copy TDB setup from file’’ area. It usually locates in setup directory.
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LOGO
Example
 Design Setup
 As mentioned before from: From Menu> Setup> Design >
Establishing
l=0.25mm,
therefore
2l=0.5mm.
Click OK: Now the technology is setup!
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LOGO
Example
 Pmos
 Choose N-Well in the left palette and draw a box
 In the N-Well area, draw P-Select (for D&S) and
N-Select (for Body). Notice that the size and position
should obey Design Rule, which can be found at:
http://www.mosis.com/files/scmos/scmos.pdf.
N-Select
P-Select
2𝝀
 It is a good idea to run DRC
at each stage of your design
so that you can fix any error
along the way
10𝝀
 Draw Active.
 Draw Poly (Gate).
N-Well
Active
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Poly
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LOGO
Example
 Nmos
 Do not need to draw P-Well (Why?).
 Draw N-Select and P-Select.
 Draw Active.
 Draw Poly.
P-Select
N-Select
4𝝀
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LOGO
Example
 Draw VDD and GND Lines.
VDD
GND
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LOGO
Example
 Connect Poly of PMOS and NMOS.
 Connect source of PMOS to VDD
by Metal1.
 Connect source of NMOS to GND
by Metal 1.
 Connect Drain of PMOS and NMOS
by Metal 1.
 Add an input connect between
Metal1 and Poly.
 Label the INPUT, OUTPUT, VDD
and GND.
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LOGO
Example

L-Edit Design Rule Check
 From Tools> DRC (or the DRC box in the toolbar)
 Run DRC for the total layout.
 Fix the errors listed.
 Once there is no DRC error
shown, the layout is ready to
extracted.
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be
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LOGO
Example
 L-Edit can be used to generate SPICE-compatible circuit file listings using
the Extract option in the setup window of the menu bar menu bar.
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LOGO
Example
 L-Edit Extractor
 General
Enter the name of the
extractor definition file
Enter the name of the
SPICE output file.
• name.cir for PSPICE
• name.sp for HSPICE
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LOGO
Example
 L-Edit Extractor
 Output
Select :
 Comments: Write Nodes
Names.
 Write Nodes as: Integers
 Write Node parasitic
Capacitance.
 Place device labels on
layer: Metal1.
 Then Click Run
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LOGO
Example
 L-Edit Extractor
 Click: Ignore All
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LOGO
Example
 The generated SPICE file
* NODE NAME ALIASES
*
1 = VIN (-7.5,-6.5)
*
2 = VOUT (27.5,-6)
*
3 = GND (-7.5,-31)
*
4 = VDD (-6,30)
The Nodes corresponding integers
The generated parasitic capacitors
Cpar1 2 0 C=1.72875E-015
Cpar2 3 0 C=1.0445E-015
Cpar3 4 0 C=1.69675E-015
M2 2 1 4 4 PMOS L=5E-007 W=2.5E-006 AD=4.375E-012
+ PD=8.5E-006 AS=4.375E-012 PS=8.5E-006
M1 2 1 3 3 NMOS L=5E-007 W=1E-006 AD=2.5E-012
+ PD=6.5E-006 AS=2.5E-012 PS=6.5E-006
* Total Nodes: 4
* Total Elements: 5
* Extract Elapsed Time: 0 seconds
.END
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The generated two MOSFETs
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