L-EDIT tutorial (Layout Editor)
Transcription
L-EDIT tutorial (Layout Editor)
L-EDIT tutorial (Layout Editor) Iran University of Science and Technology By : Eng. Bahram Roshan nezhad Fall 2012 LOGO Introduction L-Edit is an Integrated Circuit Layout Tool used to draw the two dimensional geometry of the masks or layers to fabricate an integrated circuit. Different layers are represented by by different colors and patterns. Manufacturing constraints can be defined in L-Edit as design rules. L-Edit files are saved as file_name.tdb (Tanner Database). [email protected] 1/23 LOGO L-Edit Modules L-Edit: The layout editor. L-Edit/DRC: The Design Rule Checker. L-Edit /Extract: The layout extractor to SPICE. L-Edit /SPR: an automatic standard cell. placement and routing package. [email protected] 2/23 LOGO L-Edit Window L-Edit v8.30 File and cell name Location Menu Bar Toolbars Layer Palette Drawing windows Mouse Buttons [email protected] 3/23 LOGO L-Edit Toolbars File> Open File> New File> Save Draw> Rotate Edit> Duplicate File> Print File> Copy File> Cut Edit> Edit-in Place> Edit> Push Into Find File> Undo File> Paste File> Redo Draw> Draw> Flip> Slice> Draw> Vertical Horizontal Merge Draw> Draw> Flip> Nibble Horizontal Draw> Slice> Vertical [email protected] Draw> Move By Edit> Edit Object Tool> DRC Box Tool> DRC Help> L-Edit Cell> Copy User Guid Hierarchy level View> view> Edit> Insides> Cell Edit-in Toggle Browser Place> insides Pop Out Draw> Ungroup Draw> Group view> Zoom> Mouse DRC Setup Cell> Open Edit> Find Tool> Cross Section Tools> Edit> Find Clear Error Previous Layers Edit> Find Next View> Goto 4/23 Tool> Extract LOGO L-Edit Toolbars Selection tool Polygon Polygon (90 deg.) (all-angle) Rectangular Polygon Box (45deg.) Wire (35 deg.) Wire Wire (90 deg.) (all-angle) Wire Width Circle Ruler Ruler (90 deg.) (all angle) Torus Arc Port Ruler (45 deg.) Layer Palette Selected Layer name Layer Palette Layer Palette scrollbar [email protected] 5/23 Instance LOGO Things to know Lambda Definition (𝝀( L=2∗𝜆 L: The channel length of the MOSFET, i.e, half the size of technology used. Exp) L=180nm 1Lambda=90nm Note: You must set the length of the square to represent One lambda or one Locator Unit. [email protected] 6/23 LOGO Design Parameters Setups B) Technology From: Menu> Setup> Design> Technology Create a name for your fabrication process Relationship between L-Edit internal units. one internal unit is1nm (1/1000lambda) [email protected] Technology unit 7/23 LOGO Design Parameters Setups B) Grid From: Menu> Setup> Design> Grid These are just the dots shown on the screen. This is where your mouse will snap to. To set One locator Unit=lambda [email protected] 8/23 LOGO Design Parameters Setups C) Layers Setup From: Setup> Layers [email protected] 9/23 LOGO Design Parameters Setups C) Editing Objects From: Edit> Edit Object (Ctrl+E) [email protected] 10/23 LOGO Layout Example Draw the layout of a CMOS inverter given the following: L= 0.5µm, Wn= 1.0µm, and Wp= 2.5µm. VDD Pmos L=0.5µ m Wp=2.5µ m V in Vout Nmos L=0.5µ m Wp=1.0µ m n VSS [email protected] 11/23 LOGO Example Create new Layout file File > New. In the following open window, Browse and choose ‘mamin08.tdb’ in ‘‘Copy TDB setup from file’’ area. It usually locates in setup directory. [email protected] 12/23 LOGO Example Design Setup As mentioned before from: From Menu> Setup> Design > Establishing l=0.25mm, therefore 2l=0.5mm. Click OK: Now the technology is setup! [email protected] 13/23 LOGO Example Pmos Choose N-Well in the left palette and draw a box In the N-Well area, draw P-Select (for D&S) and N-Select (for Body). Notice that the size and position should obey Design Rule, which can be found at: http://www.mosis.com/files/scmos/scmos.pdf. N-Select P-Select 2𝝀 It is a good idea to run DRC at each stage of your design so that you can fix any error along the way 10𝝀 Draw Active. Draw Poly (Gate). N-Well Active [email protected] Poly 14/23 LOGO Example Nmos Do not need to draw P-Well (Why?). Draw N-Select and P-Select. Draw Active. Draw Poly. P-Select N-Select 4𝝀 [email protected] 15/23 LOGO Example Draw VDD and GND Lines. VDD GND [email protected] 16/23 LOGO Example Connect Poly of PMOS and NMOS. Connect source of PMOS to VDD by Metal1. Connect source of NMOS to GND by Metal 1. Connect Drain of PMOS and NMOS by Metal 1. Add an input connect between Metal1 and Poly. Label the INPUT, OUTPUT, VDD and GND. [email protected] 17/23 LOGO Example L-Edit Design Rule Check From Tools> DRC (or the DRC box in the toolbar) Run DRC for the total layout. Fix the errors listed. Once there is no DRC error shown, the layout is ready to extracted. [email protected] be 18/23 LOGO Example L-Edit can be used to generate SPICE-compatible circuit file listings using the Extract option in the setup window of the menu bar menu bar. [email protected] 19/23 LOGO Example L-Edit Extractor General Enter the name of the extractor definition file Enter the name of the SPICE output file. • name.cir for PSPICE • name.sp for HSPICE [email protected] 20/23 LOGO Example L-Edit Extractor Output Select : Comments: Write Nodes Names. Write Nodes as: Integers Write Node parasitic Capacitance. Place device labels on layer: Metal1. Then Click Run [email protected] 21/23 LOGO Example L-Edit Extractor Click: Ignore All [email protected] 22/23 LOGO Example The generated SPICE file * NODE NAME ALIASES * 1 = VIN (-7.5,-6.5) * 2 = VOUT (27.5,-6) * 3 = GND (-7.5,-31) * 4 = VDD (-6,30) The Nodes corresponding integers The generated parasitic capacitors Cpar1 2 0 C=1.72875E-015 Cpar2 3 0 C=1.0445E-015 Cpar3 4 0 C=1.69675E-015 M2 2 1 4 4 PMOS L=5E-007 W=2.5E-006 AD=4.375E-012 + PD=8.5E-006 AS=4.375E-012 PS=8.5E-006 M1 2 1 3 3 NMOS L=5E-007 W=1E-006 AD=2.5E-012 + PD=6.5E-006 AS=2.5E-012 PS=6.5E-006 * Total Nodes: 4 * Total Elements: 5 * Extract Elapsed Time: 0 seconds .END [email protected] The generated two MOSFETs 23/23