TS820-600T(800T)G - First Semiconductor

TS820-600T(800T)G
SCRs
Simplified outline
TO-220AB
Description
Glass passivated, sensitive gate thyristors in a plastic envelope,
intended for use in general purpose switching and phase control
applications. These devices are intended to be interfaced directly
to microcontrollers, logic integrated circuits and other low power
12
gate trigger circuits.
3
Symbol
Features
• Blocking voltage to 800 V
a
k
• On-state RMS current to 8 A
g
• Ultra low gate trigger current
• Motor control
• Industrial and domestic lighting
• Heating
• Static switching
SYMBOL
V DRM
IT
RMS
I TSM
SYMBOL
Rth j-c
Rth j-a
Description
Pin
Applications
1
cathode
2
anode
3
gate
TAB
anode
PARAMETER
Repetitive peak off-state voltages
RMS on-state current
Non-repetitive peak on-state current
PARAMETER
Junction to case (DC)
Junction to ambient (DC)
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600TG
800TG
Value
Unit
600
800
V
8
A
73
A
Value
UNIT
20
/W
70
/W
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TS820-600T(800T)G
Limiting values in accordance with the Maximum system(IEC 134)
SYMBOL
V DRM V RRM
I T(RMS)
I T(AV)
PARAMETER
Repetitive peak off-state
Voltages
RMS on-state current
CONDITIONS
all conduction angles
Half sine wave;<=111
I TSM
Non-repetitive peak
on-state current
half sine wave; Tj = 25
prior to surge
I 2t
I t for fusing
DI T/dt
I GM
V RGM
P GM
P G(AV)
T stg
Tj
MAX
UNIT
-
600
800
V
-
8
5
70
73
24.5
-
50
A/ s
-
A
-40
4
5
5
1
150
-
125 2
600TG
800TG
Average on-state current
2
MIN
t=10ms
t=8.3ms
Tj=25
T=10ms
Critical rate of rise
F=60Hz Tj=125
I G=2*I GT, tr 100ns
of on-state current
Peak gate current
Tj=125
Tp=20 s
Peak reverse gate voltage
Peak gate power
Average gate power
Over any 20 ms period
Storage temperature
Operating junction
Temperature
。
TJ =25 C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN
A
A
A
A
A 2S
V
W
W
TYP MAX UNIT
Static characteristics
I GT
Gate trigger current
V D=12V; R L=140
-
-
200
A
V GT
Gate trigger voltage
V D=12V; R L=140
-
-
0.8
V
-
-
0.1
V
V GD
V D=V DRM; R L=3.3K
R GK=220
Tj=125
IL
Latching current
I G=1mA,R GK=1k
-
-
6
mA
IH
V TO
Rd
Holding current
Dynamic resistance
T J=125
-
-
5
Threshold voltage
IT=50mA,R GK=1k
Tj=125
0.85
46
mA
V
m
5
-
-
V/ s
Dynamic Characteristics
D V/dt
Critical rate of rise of
Off-state voltage
V D=65% V DRM;R GK=220 ;
T J=125
V RG
I RG=10 A
8
-
-
V
V TM
I TM=16A tp=380 S
-
-
1.6
V
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TS820-600T(800T)G
Description
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TS820-600T(800T)G
Description
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TS820-600T(800T)G
Package Mechanical Data
TO-220AB (Plastic)
DIMENSIONS
B
REF.
C
Millimeters
Inches
b2
Min.
L
F
I
A
l4
c2
a1
l3
l2
a2
b1
M
c1
e
A
a1
a2
B
b1
b2
C
c1
c2
e
F
I
I4
L
l2
l3
M
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Typ.
15.20
Max.
Min.
Typ.
15.90 0.598
3.75
Max.
0.625
0.147
13.00
14.00 0.511
0.551
10.00
10.40 0.393
0.409
0.61
0.88 0.024
0.034
1.23
1.32 0.048
0.051
4.40
4.60 0.173
0.181
0.49
0.70 0.019
0.027
2.40
2.72 0.094
0.107
2.40
2.70 0.094
0.106
6.20
6.60 0.244
0.259
3.75
3.85 0.147
0.151
15.80 16.40 16.80 0.622 0.646 0.661
2.65
2.95 0.104
0.116
1.14
1.70 0.044
0.066
1.14
1.70 0.044
0.066
2.60
0.102
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