BT152-400R(600R,800R)G
Transcription
BT152-400R(600R,800R)G
BT152-400R(600R,800R)G SCRs Simplified outline TO-220AB Description Standard gate triggering SCR is fully isolated package suitable for the application where requiring high bidirectional blocking voltage capability and also suitable for over voltage protection, motor control circuit in power tool, inrush current limit circuit and heating control system. 12 3 Symbol Features • Blocking voltage to 800 V a k • On-state RMS current to 20 A g • Ultra low gate trigger current • Motor control • Industrial and domestic lighting • Heating • Static switching SYMBOL Repetitive peak off-state voltages V RRM Voltages RMS I TSM cathode 2 anode 3 gate TAB anode Value Unit 450 650 800 V 20 A 200 A 400RG 600RG 800RG RMS on-state current Non-repetitive peak on-state current SYMBOL PARAMETER Rth j-mb Thermal resistance Junction to mounting base Rth j-a 1 PARAMETER V DRM IT Description Pin Applications Thermal resistance Junction to ambient @ 2010 Copyright By American First Semiconductor CONDITIONS In free air MIN TYP MAX UNIT - - 1.1 K/W - 60 - K/W Page 1/5 BT152-400R(600R,800R)G Limiting values in accordance with the Maximum system(IEC 134) SYMBOL PARAMETER V DRM Repetitive peak off-state V RRM Voltages I TAV I T(RMS) I TSM Average on-state current Half sine wave;Tmb<=103 All conduction angles RMS on-state current half sine wave; Tj = 25 T=10ms Non-repetitive peak prior to surge T=8.3ms On-state current I 2t I t for fusing T=10ms DI T/dt Repetitive rate of vise of on-state current after trigering I TM=50 A; I G=0.2 A; D IG/dt=0.2 A/ s I GM V GM P GM P G(AV) T stg Peak gate current Peak gate voltage Peak gate power Average gate power Tj 2 CONDITIONS MIN MAX UNIT - 500 650 800 V 500RG 650RG 800RG -40 5 5 20 0.5 150 - 125 Over any 20 ms period Storage temperature Operating junction Temperature A A A A 13 20 200 220 200 200 2 AS A/ s A V W W 。 TJ =25 C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT Static characteristics I GT Gate trigger current V D=12V; I T=0.1A - 3 32 mA IL Latching current V D=12V; I GT=0.1A - 25 80 mA IH VT Holding current 15 1.4 60 1.75 V GT Gate trigger voltage - mA On-state voltage V D=12V; I GT=0.1A I T=40A V D=12V;I T=0.1A O V D=V DRM(max);I T=0.1A;T J=125 C 0.25 0.6 0.4 1.5 - V V ID Off-state leakage current - 0.2 1.0 mA 200 300 - V/ s - 2 - s - 70 - s O V D=V DRM(max);V R=V RRM(max)T J=125 C V Dynamic Characteristics o D VD/dt Critical rate of rise of Off-state voltage V DM=67% V DRM(max);Tj=125 C; exponential wave form; gate open circuit t gt Gate controlled turn-on time tg Crcuit commutated tumoff time I TM=40A;V D=V DRM(max); I G=0.1A; Dl G/dt=5A/ s o V DM=67% V DRM(max);Tj=125 C;I TM=50A V R=25V;dI TM/dt=30A/ S Dl G/dt=50V/ s;R GK=100 www.First-semi.com Page 2/5 BT152-400R(600R,800R)G Description www.First-semi.com Page 3/5 BT152-400R(600R,800R)G Description www.First-semi.com Page 4/5 BT152-400R(600R,800R)G Package Mechanical Data TO-220AB (Plastic) DIMENSIONS B REF. C Millimeters Inches b2 Min. L F I A l4 c2 a1 l3 l2 a2 b1 M c1 e A a1 a2 B b1 b2 C c1 c2 e F I I4 L l2 l3 M www.First-semi.com Typ. 15.20 Max. Min. Typ. 15.90 0.598 3.75 Max. 0.625 0.147 13.00 14.00 0.511 0.551 10.00 10.40 0.393 0.409 0.61 0.88 0.024 0.034 1.23 1.32 0.048 0.051 4.40 4.60 0.173 0.181 0.49 0.70 0.019 0.027 2.40 2.72 0.094 0.107 2.40 2.70 0.094 0.106 6.20 6.60 0.244 0.259 3.75 3.85 0.147 0.151 15.80 16.40 16.80 0.622 0.646 0.661 2.65 2.95 0.104 0.116 1.14 1.70 0.044 0.066 1.14 1.70 0.044 0.066 2.60 0.102 Page 5/5
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