Key development approach in the area of MEMS manufacturing and

Key development approach in the area of MEMS
manufacturing and MEMS wafer level packaging
Claude Jean, MSc, MBA
Executive Vice President & General Manager, Teledyne DALSA Semiconductor
Global Semiconductor Forum – Shanghai – March 8th, 2012
© 2012 C2MI
ABOUT TELEDYNE DALSA SEMICONDUCTOR
Specialized Semiconductor foundry in
Bromont, Canada - in operation since
1976
MEMS Sales
(x1,000,000 CDN$)
$40.0
$35.0
$30.0
21% CAGR siince 2005
$25.0
$20.0
Focus on MEMS, CCD and HV-CMOS:
$15.0
$10.0
MEMS: Design, manufacturing
(150mm & 200mm), WLP, Test
$5.0
$2005
2006
2007
2008
2009
2010
2011
CCD: Design support, manufacturing
(150mm), BST, color filters, micro
lenses
HV-CMOS: Design, manufacturing
(150mm), packaging & test of ASIC
targeted for MEMS electrostatic
actuation
© 2012 C2MI
wfr size
1X F/B alignment
Teledyne DALSA
MEMS roadmap
This roadmap excludes development of
design & modelization capabilities
R&D
Pre-production
Production
Glass frit wafer bonding
100mm
ECE etch
100mm
PS testing
TMAH-IPA etch
2002
2003
2004
2005
2006
2007
2008
2009
2010
2011
2012
2013
2014
100mm
NA
100mm
Thick photopolymers
150mm
Structural LSN
150mm
Structural aSi
150mm
TMAH-IPA etch
150mm
DRIE
150mm
Anti-Stiction coating
150mm
AHF Release
150mm
Wafer bonding
150mm
CMP
150mm
5X F/B alignment
150mm
TMAH-IPA etch
200mm
DRIE
200mm
Wafer bonding
200mm
5X F/B alignment with drill focus
200mm
Stealth dicing
150mm
MOEMS testing
150mm
Edge grinding
150mm
Dry film lamination
150mm
Thick photopolymers
200mm
Structural LSN
200mm
Structural aSi
200mm
Anti-Stiction coating
200mm
Edge grinding
200mm
VOX deposition
200mm
Alchimer AquiVia for TSV
200mm
Visual Defect monitoring
200mm
2D/3D Metrology
200mm
IR Metrology
200mm
Thin films metrology
200mm
Si-SiO2-Cu-W CMP
200mm
Advanced Wet processing
200mm
© 2012 C2MI
2015
Teledyne DALSA MEMS roadmap
wfr size
Pressure Sensors
150mm
Microphones
150mm
Microfluidics
150mm
Resonators
150mm
Inertial Sensors
2003
2004
2005
2006
2007
2008
2009
2010
2011
2012
2013
2014
2015
150mm/200mm
Si Interposers (TSV Via First)
150mm
MOEMS
150mm
LOC
150mm
TSV Cu based Via last
2002
150mm/200mm
Microbolometers
200mm
RF Switches
150mm
R&D
Pre-production
Production
© 2012 C2MI
MEMS - A market in evolution
Automotive
– Pressure sensors, accelerators, rollover
sensors and actuators
Industrial
– Micro-fluidic, pressure sensors , flow sensors,
inertial sensors
Consumer
– Cellular phones: inertial sensors (gyroscopes
and accelerators), microphones, RF
components, micro mirrors,
– Printers: Ink jet head
– Gaming consoles: gyroscopes, accelerators,
MOEMS
– PC: microphones, pressure sensors, RF
– GPS: gyroscopes, accelerators, e-compass,
pressure sensors
Health
– Lab on a chip
– Gas detectors
5
© 2012 C2MI
MEMS Market – a combination of
low volumes/high performance and high
volumes/low cost products
REF: YOLE DEVELOPMENT (www.yole.fr)
© 2012 C2MI
High Volume MEMS - Challenges
Low Cost
High die volumes ≠ High wafer volumes
Typical high volumes MEMS product will not fill 1 month of capacity
of most 200mm fabs
Fast throughput ramp-up
Equipment manufacturer lead times
OEE of specialized MEMS equipment
Fast Yield ramp-up
Typical CMOS automated inspection systems not geared for MEMS
Advanced MEMS products require fine tuning of equipment and
process
Know how
Hundreds of engineering years required for basic technology blocs
and process integration.
© 2012 C2MI
High Volume MEMS – Challenges
Capital Investment
Putting in place a high volume/high yield MEMS
manufacturing capacity require significant capex
investment, even for depreciated 200mm CMOS
foundries
DRIE
Structural LSN & aSi furnaces
OEE !
Anhydrous HF release
Anti-stiction coating
Thick polymer tracks
Automated inspection and metrology equipments
MEMS testers
© 2012 C2MI
High Volume MEMS – Challenges
Yield Improvement
Case study:
3 Advanced SOI substrates
7 Sub-micron front-to-back
alignment steps
2 Si-Si bonds with micron level
align for precise alignment of
internal MEMS features
5 Deep silicon etch with better
than ±0.15µm tolerance
Patented stress stabilized
materials
Stealth dicing for excellent
contamination control
Inline automated inspection and
defect identification
© 2012 C2MI
High Volume MEMS - Solutions
Combine in the same fab
consumer/automotive high volume
products +
industrial/scientific/medical high value
added products
High volumes products require
an expensive, high throughput
set of equipment but cannot pay
for it by itself
High value added products need
performance that usually comes
with an expensive and highly
automated set of equipment but
cannot pay for it by itself
Both combined = model that
works
Value
added
VOLUME
© 2012 C2MI
MEMS product development - Challenges
According to YOLE Development:
“Time for development of a new MEMS device is now 3 to 4 years and the
required investment is in the few $10’s of millions to enter production…
furthermore it will take 3 to 4 CEOs…”
– Fabless companies can’t afford to invest that money in fab and
equipments
– Even companies that already own a fab can’t afford to invest so much
money in very expensive fully automated equipments 3 to 4 years
before production ramp-up, time to cash too long
– Developing a new MEMS on manual low end type of equipments make
it difficult to quickly ramp-up volumes and yields when the market is
ready
– Bromont’s MiQro Innovation Collaborative Center offers a solution to
this challenge
© 2012 C2MI
MiQro Innovation Collaborative Center (C2MI) – Solution for
future cost efficient MEMS development & prototyping
A $218M
investment
Located in
Bromont,
Quebec,
Canada
Less than
80 km from
Montreal
© 2012 C2MI
C2MI – A $218M Investment
Two 2 buildings for a total of 15 000m2
Clean room: 5300m2; Offices & Services : 9700m2
© 2012 C2MI
C2MI – Founding Partners & Equipment Suppliers
© 2012 C2MI
MEMS in C2MI
Equipment Set (SMIF & 200mm Only)
Through-the wall, bulk head mount
Expose wafers to < Class 1 environment (SMIF interfaces)
Interface with operators located in a Class 10 clean room
Backbone in a Class 1000 chase (Photo = Class 10)
Facilities in the Class 100,000 basement
Bulk delivery of chemicals (when required)
Fully automated using SECS-II GEM interface
Selected with full-Fab automation in mind
© 2012 C2MI
MEMS and WLP in C2MI - Key challenges
Migration existing technologies from
150mm to 200mm wafers
– Productivity gains
– Benefit from more advanced
manufacturing technologies
(Uniformity, process stability,
throughput, …)
Optimization of existing technologies
– Quality, performance and costs
Development of new technologies
– Required by new markets
– New materials
– New equipments
16
© 2012 C2MI
C2MI
MEMS, WLP & Wafer-level 3D-IC Strategy
Through-Silicon Via, TSV, Technologies:
© 2012 C2MI
Alchimer’s Cu-based TSV –
a strategic technology in C2MI
Material
Standard Copper
Electroplating
Pros
Compatible after CMOS
Low via resistance (0.1Ω)
Good thermal conductivity
Cons
Sensitive to Bosch’s scallops
Conformal dielectric required
Conformal barrier required
Conformal seed layer required
High cost per wafer
© 2012 C2MI
Alchimer’s Cu-based TSV –
a strategic technology in C2MI
Material
Alchimer’s
Copper AquiVia XS
Pros
Compatible after CMOS
Low via resistance (0.1Ω)
Good thermal conductivity
Insensitive to Bosch’s scallops
Provides a conformal dielectric
Provides a conformal barrier
Prevents the use of seed layer
Low cost per wafer
Cons
http://www.alchimer.com/news/alc009a
New technology
© 2012 C2MI
Alchimer
Dielectric + Ni(B) + Cu TSV
AquiVia™ process licensed from Alchimer
Equipment manufactured by Lenix (Korea)
Module 1: Pre-wetting of Si wafers with 20:1 AR vias
Module 2: Chemical grafting of 0.2-1.0um insulation
Module 3: Activation of insulation for Ni(B)
Module 4: Electroless Ni(B) diffusion barrier
Module 5: Cu electrofill in 50:5um & 100:5um TSV
Module 6: Wafer annealing
Module 7: 80Au/20Sn eutectic electroplating
Fully automated TSV process
Fully automated bulk delivery
http://www.alchimer.com
© 2012 C2MI
ASML
PAS5500/200B 3D Align & Multi Step Imaging
5X Step align
Resolution down to 0.35um
Front-Front, 50nm, 3-sigma
Back-Back, 80nm, 3 sigma
Front-Back, 210nm, 3-sigma
Multi-Step Imaging, 3 levels
Dry Films exposure
© 2012 C2MI
SPTS
Versalis fxP – DSI Rapier
Si high AR etch up to 100:1 (DRIE & ICP etch)
Si features down to 500 +/- 50nm (3-sigma)
Si profile angle: 90 ±0.1o (3-sigma)
Si notching: < 150nm (3 sigma)
Si tilt: < ± 0.3o (3 sigma)
Si DRIE rate up to 30µm/min
ICP Mode
DRIE Mode
Mixed Mode
VERSALIS fxP
© 2012 C2MI
EVG
Gemini Wafer Bonder
N2 controlled SMIF interface
Megasonic clean 2% NH4OH
Wafer align +/- 0.4um (3 sigma)
1.5-100 kN bond force
Wafer bond 20-550oC (Cu-Cu,
Al-Al, Au-Au, Au-Si, KMPR,
Glass Frit, Si-Si, SiO2-SiO2,
Si-SiO2, Al-Ge, Au-Sn,
Vacuum and controlled ambient
45oC/min ramp-up
© 2012 C2MI
SPTS
AVP-8000 SiN & LS-SiN
Low-stress SiN & standard SiN deposits
In-situ NF3 cleans
One year without tube dismantling
Wafer
(mm)
150
200
Thickness
(nm)
Mechanical Stress
(MPa)
Production
wafers/load
Within Wafer
(%, 1-σ)
Wafer-Wafer
(%, 1-σ)
Run-Run
(%, 1-σ)
Overall
(%, 1-σ)
135
300
135
300
190 ± 20
190 ± 40
190 ± 20
190 ± 40
50
100
50
100
4.0
4.0
4.0
4.0
3.0
7.0
3.0
7.0
7.0
10.0
7.0
10.0
10.0
12.0
10.0
12.0
© 2012 C2MI
Complete Tool Set
ASML PAS5500/200B 3D Align & Multi
Step Imaging
TEL CleanTrack ACT-8
Leonardo 200 Dry Film Laminator
Leonardo 200 Dry Film Lift-off
SPTS Versalis fxP – APS
SPTS Versalis fxP – APM
SPTS Versalis fxP - ICP metal etch +
Isopod strip
SPTS Versalis fxP – DSI Rapier
Ulvac Enviro-1Xa
PPE Electroless processor
Lenix/Alchimer Dielectric + Ni(B) + Cu
TSV
Strasbaugh STB-P300-IC
Accretech PG300RM Wafer Grinder
Disco DFD-6362 Dicing Saw
EVG Gemini Wafer Bonder
Akrion GAMA Surface Cleaning
Processor
Akrion GAMA Strong Acid Processor
Akrion GAMA Strong Base Processor
SPTS AVP-8000 SiN & LS-SiN
SPTS AVP-8000 ISDP
SPTS AVP-8000 TEOS
SPTS RVP-9000 O2 / H2
Yield Engineering Systems PBV300
Molecular Vapor Treatment Furnace
Yield Engineering Systems
PBV300 High Vacuum Furnace
Yield Engineering Systems
PBV300 Sub-Atmospheric Furnace
Rudolph F30+E30+B30
McBain DDR-300 SWIR Inspector
N&K Olympian
© 2012 C2MI
Proposed solution
MEMS process development in the C2MI:
Fully automated 200mm equipment set
Most capable and advanced manufacturing and metrology tool
set
IP friendly development environment
Complete qualification, prototyping and market penetration using
C2MI infrastructure
When market penetration is achieved, can copy-paste
equipment subset into a high volume foundry environment with
good IP protection
© 2012 C2MI
Conclusion
2000-2011: MEMS manufacturing evolution from LAB ERA TO FAB ERA
That evolution has required hundreds of thousands of hours of engineering
in scientific fields not familiar to the CMOS world
Manufacturing today’s most advanced MEMS products in high volumes with
high yields require the most technologically advanced equipments and
process modules.
200mm CMOS fabs can be re-used to manufacture high volumes MEMS
but…
Significant portion of capital required doesn’t exist in a CMOS fab
Engineering expertise required is not 100% compatible with typical
CMOS engineering expertise
Yield improvement tools, software & methods must be significantly
modified
C2MI is an ideal infrastructure to develop new sophisticated MEMS and
WLP process/products and achieve market penetration before transferring
into high volume MEMS fab
© 2012 C2MI
Thank You !
Source : Menkes Shooner Dagenais Letourneux Architectes
http://www.teledynedalsa.com
www.c2mi.ca
2011 C2MI
©©2012
C2MI
© 2012 C2MI